EP0717437A2 - Méthode pour former des couches enterrées d'oxide - Google Patents

Méthode pour former des couches enterrées d'oxide Download PDF

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Publication number
EP0717437A2
EP0717437A2 EP95308590A EP95308590A EP0717437A2 EP 0717437 A2 EP0717437 A2 EP 0717437A2 EP 95308590 A EP95308590 A EP 95308590A EP 95308590 A EP95308590 A EP 95308590A EP 0717437 A2 EP0717437 A2 EP 0717437A2
Authority
EP
European Patent Office
Prior art keywords
wafer
oxygen
oxide layer
soi
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95308590A
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German (de)
English (en)
Other versions
EP0717437A3 (fr
EP0717437B1 (fr
Inventor
John K. Lowell
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of EP0717437A2 publication Critical patent/EP0717437A2/fr
Publication of EP0717437A3 publication Critical patent/EP0717437A3/fr
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Publication of EP0717437B1 publication Critical patent/EP0717437B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

Definitions

  • the instant invention is directed to the manufacture of a silicon on insulator (SOI) wafer, and more particularly to a method of producing an SOI wafer having a buried oxide layer at a lower cost and which is also more reliable than conventionally known wafers. According to the method of the invention, such an SOI wafer can be produced using standard equipment in a normal production facility.
  • SOI silicon on insulator
  • SOI wafers having buried oxide layers are an attractive technology for deep-submicron CMOS and radiation-hardened devices because the buried oxide layer offers both device isolation and the ability to getter defects, such as oxygen and metallic ions, away from the operating region of the device.
  • SIBOND With SIBOND wafers, as illustrated in Figure 1A, an oxide layer 12 is formed on the surface of a substrate 10. A second silicon wafer 14 is bonded to the top surface of the oxide layer 12. Using this method, the top wafer 14 must be formed relatively thin so that the oxide layer 12 is at the desired depth to achieve the device isolation. This results, in an increased potential for defects as the thin layer is worked.
  • Another drawback to the SIBOND wafer is manufacturing cost.
  • the SOI wafer cannot be incorporated into the "in-house" production of a semiconductor device. Instead, the SOI wafer must be purchased from an outside source.
  • the second method employed to produce SOI wafers is SIMOX (i.e., S eparation by Im planted Ox ygen).
  • SIMOX technology as illustrate in Figure 1B, oxygen 16 is implanted into the substrate 10 at relatively low energies to form the buried oxide layer 13.
  • SIBOND one drawback for a semiconductor device manufacturer who wishes to use conventional SIMOX wafers is that the equipment need to produce such wafers is not of the type normally used in manufacturing semiconductor devices.
  • typically SIMOX wafers must also be purchased from an outside source. Accordingly the costs of using SOI wafers is increased.
  • SIMOX wafers are typically considered "dirty", in the sense that significant amounts of iron impurities are introduced into the wafer during oxygen implantation. Since Oxygen is not a standard species for ion implantation, the implanting device must be configured in a way which introduces these unwanted impurities.
  • One of the downsides of using SIMOX wafers is that the iron rich nature of the wafer will significantly hinder the production and/or operation of most semiconductor devices.
  • the oxygen implantation step is not practical for implementation in standard device production facilities as part of the manufacturing process.
  • a method of manufacturing a wafer having a buried oxygen layer at a desired depth includes the step of implanting an ion into at least a portion of an oxygen-rich wafer to form a defect region at the desired depth in the oxygen rich wafer.
  • the implantation is carried out at an energy level at or above 1 MeV.
  • the method also includes the step of annealing the oxygen-rich wafer such that oxygen in the wafer is gettered to the defect region.
  • phosphorous is used for the ion implantation at a dose between 4.5x10 14 /cm 2 and 1x10 15 /cm 2 .
  • the method is used to produce an SOI wafer having a buried oxide layer at a desired depth.
  • Figure 2 illustrates a device for which an SOI wafer manufactured according to the instant invention is to be used.
  • a substrate 20 includes a buried oxide layer 22.
  • a semiconductor device 26 is formed on the upper portion 24 of the wafer above the oxide layer 22, a semiconductor device 26 is formed.
  • This type of structure is particularly advantageous in CMOS logic in that it prevents parasitic latch-up.
  • This type of structure is also advantageous for use in radiation hardened devices, as it prevents problems associated with ⁇ -particles of radiation.
  • FIGs 3A-3C illustrate a method for producing an SOI wafer according to an embodiment of the instant invention.
  • a standard P-type (100) wafer which is grown in an oxygen-rich (e.g. approximately 1x10 18 cm 3 ) is provided as shown in Figure 3A.
  • the oxygen-rich wafer is implanted with a standard species, in this case phosphorous (P), at an energy level of at least 1 MeV.
  • P phosphorous
  • the instant invention is not limited to phosphorous. Any standard species which generates the desired defect region could be used.
  • having ions (relative to phosphorous) such as Arsenic can most easily be used to produce the desired effect.
  • the implantation step could be carried out through an oxide layer (not shown) on the surface of wafer 35.
  • the dosage of the phosphorous implant can be varied according to the desired effect. In the specific examples provided below, the doses were varied between approximately 5x10 14 cm 2 to 1x10 15 cm 2 .
  • the high energy phosphorous implantation of Figure 3B creates a zone of defects 31 as a function of the phosphorous implant.
  • the zone of defects 31 is approximately 1 micron beneath the surface of the wafer 35. Since the implantation energy is relatively high, the zone of defects 31 are formed as an amorphous layer roughly about 1 micron deep. The defect zone is not formed from the surface down to the region 31 (at 1 micron) as would be seen in conventional SIMOX oxygen implantation illustrated in Figure 1B. This is because a higher implantation energy is used as compared to the energy used for SIMOX oxygen implantation.
  • the wafer 35 including the zone of defects 31, is subjected to a 30-minute 960° annealing process.
  • the oxygen within the oxygen rich wafer 30 is drawn to the defects in the zone of defects 31.
  • the background oxygen of the wafer 35 is drawn from both near the surface and from the bulk.
  • a zone of oxygen is collected where the defects 31 were formed.
  • an SOI wafer including a buried oxide layer 32 at a depth of approximately 1 micron is formed. In this manner, during the annealing step, the oxygen is gettered to the defects created by the phosphorous implant in order to produce a buried oxide layer.
  • Figures 4A-4D illustrate SIMS profiles which illustrate features of the above described process for manufacturing an SOI wafer.
  • Figure 4A shows a SIMS profile of the oxygen-rich wafer directly after a 1x10 15 cm 2 phosphorous implant at 1 MeV was carried out in the manner illustrated in Figure 3B.
  • the SIMS profile of Figure 4A illustrates the properties of a wafer before the annealing step illustrated in Figure 3C is carried out.
  • the background oxygen level 41 of the wafer is approximately 1x10 18 atoms/cm 2 .
  • the location of the phosphorous implant 43 is also evident.
  • Figure 4A also illustrates the absence of any buried oxygen layers within the wafer.
  • Figures 4B and 4C illustrate wafers manufactured according to the instant invention after the annealing step of Figure 3C is carried out on implants of phosphorous at dosages of approximately 5x10 14 cm 2 and 1x10 15 cm 2 , respectively.
  • a dosage of 5x10 14 a distinct oxide layer is formed at the oxygen peak 42 approximately 1 micron deep. This layer is approximately 0.5 microns wide and has a peak level of 5x10 18 cm 3 .
  • the surrounding oxygen has been gettered in the production of the oxygen peak 42.
  • Figure 4C illustrates a SIMS profile of a wafer after the annealing step which was implanted with phosphorous at a level of approximately 1x10 15 cm 2 .
  • this process produced two oxygen peaks 43 and 44 at approximately 0.3 and 1.0 microns, respectively.
  • the first oxygen peak 44 is similar to the oxygen peak 42 in Figure 4B.
  • the second peak 43 is produced as a result of the phosphorous implant at the higher dosage which knocks oxygen from the surface into the substrate. In other words, some of the oxygen at the surface is knocked into the substrate by the phosphorous. This effect is even more pronounced when the phosphorous implant is carried out through an oxide layer on the surface of the substrate.
  • the second oxygen peak 43 is not the result of defects created by the phosphorous implant, but rather is a result of oxygen actually moved from the surface to that region. This will be more fully understood from the description of the interferometry results described below.
  • FIG 4D a wafer is shown wherein phosphorous was implanted at a dose of 5x10 14 cm 2 at approximately 1 MeV.
  • the wafer prior to the annealing step illustrated in Figure 3C, the wafer is subjected to an H 2 15 minute 1,150° annealing treatment.
  • H 2 treatment is carried out prior to the annealing step illustrated in Figure 3C, significant oxygen layers are not formed within the wafer.
  • a slight oxygen peak 48 can be seen. However, this oxygen peak is not at a significant level.
  • the H 2 anneal can be used to essentially prohibit the formation of the oxide layer (i.e., when it is desired that the oxygen not be gettered to the defect zone, an H 2 treatment can be carried out in order to push the oxygen towards the bottom of the substrate).
  • an H 2 anneal can be used along with the phosphorous implant in a standard production line.
  • an H 2 treatment could be carried out prior to the annealing step.
  • the production of an SOI type substrate could be selectively carried out. That is, the same implant could be carried out when it is desired to create the same junction, but if the buried O 2 layer was not desired, the hydrogen annealing step would be inserted between the steps illustrated in Figure 3B and Figures 3C.
  • the instant method for producing an SOI wafer could be carried out in a production process as desired, without committing the entire production line to an SOI type wafer.
  • the interferometric results demonstrate that in each of the instances except for wafer 24, a defect region is detected at the depth of approximately 1 micron. The results did not produce a defect region above the 1 micron region. It is noted that for wafer 24 while the defect region exists no oxide layer is formed at the 1 micron level in order to reflect and examine the defect region. While in wafer 5 (illustrated in Figure 4D) only a small oxygen peak is formed, it is sufficient to examine the defect region.
  • an oxide layer buried within the SOI wafer can be formed. The formation of the oxide layer can also be controlled by controlling the phosphorous implantation and/or the level of the background oxygen layer. Moreover, formation can be inhibited with an H 2 anneal.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Glass Compositions (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
EP95308590A 1994-12-12 1995-11-29 Méthode pour former des couches enterrées d'oxide Expired - Lifetime EP0717437B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US355298 1982-11-01
US35529894A 1994-12-12 1994-12-12

Publications (3)

Publication Number Publication Date
EP0717437A2 true EP0717437A2 (fr) 1996-06-19
EP0717437A3 EP0717437A3 (fr) 1997-04-02
EP0717437B1 EP0717437B1 (fr) 2002-04-24

Family

ID=23396959

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95308590A Expired - Lifetime EP0717437B1 (fr) 1994-12-12 1995-11-29 Méthode pour former des couches enterrées d'oxide

Country Status (6)

Country Link
US (1) US5891743A (fr)
EP (1) EP0717437B1 (fr)
JP (1) JPH08255885A (fr)
KR (1) KR960026128A (fr)
AT (1) ATE216802T1 (fr)
DE (1) DE69526485T2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261A1 (fr) * 1997-12-30 1999-07-02 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6486043B1 (en) 2000-08-31 2002-11-26 International Business Machines Corporation Method of forming dislocation filter in merged SOI and non-SOI chips
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
US6602757B2 (en) * 2001-05-21 2003-08-05 International Business Machines Corporation Self-adjusting thickness uniformity in SOI by high-temperature oxidation of SIMOX and bonded SOI
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
CN116759325B (zh) * 2023-08-23 2023-11-03 江苏卓胜微电子股份有限公司 用于监控离子注入剂量的阻值监控方法

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Non-Patent Citations (1)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261A1 (fr) * 1997-12-30 1999-07-02 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
WO1999035674A1 (fr) * 1997-12-30 1999-07-15 Commissariat A L'energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6756286B1 (en) 1997-12-30 2004-06-29 Commissariat A L'energie Atomique Method for transferring a thin film comprising a step of generating inclusions
US7229899B2 (en) 1997-12-30 2007-06-12 Commissariat A L'energie Atomique Process for the transfer of a thin film

Also Published As

Publication number Publication date
DE69526485T2 (de) 2002-12-19
US5891743A (en) 1999-04-06
DE69526485D1 (de) 2002-05-29
EP0717437A3 (fr) 1997-04-02
EP0717437B1 (fr) 2002-04-24
KR960026128A (fr) 1996-07-22
ATE216802T1 (de) 2002-05-15
JPH08255885A (ja) 1996-10-01

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