EP0699989A1 - Integrierte Schaltung mit Sofortstartfunktion von Spannungsquellen oder Referenzstrom - Google Patents

Integrierte Schaltung mit Sofortstartfunktion von Spannungsquellen oder Referenzstrom Download PDF

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Publication number
EP0699989A1
EP0699989A1 EP95401983A EP95401983A EP0699989A1 EP 0699989 A1 EP0699989 A1 EP 0699989A1 EP 95401983 A EP95401983 A EP 95401983A EP 95401983 A EP95401983 A EP 95401983A EP 0699989 A1 EP0699989 A1 EP 0699989A1
Authority
EP
European Patent Office
Prior art keywords
mode
transistors
transistor
gate
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95401983A
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English (en)
French (fr)
Other versions
EP0699989B1 (de
Inventor
Alexandre Malherbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
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Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of EP0699989A1 publication Critical patent/EP0699989A1/de
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

Definitions

  • the invention relates to integrated circuits.
  • standby mode is implemented when the circuit does not need to perform all of the normal functions for which it is intended; the circuit then simply monitors the appearance of an event which should trigger the reactivation of normal functions. In this standby mode, it is desirable that normal functions do not consume power unnecessarily.
  • the standby mode is defined by a determined logic state, 0 or 1, of a logic signal present on an internal node or on an external access terminal of the circuit. This logic signal is used to control switches that cut current consumption in different branches of the integrated circuit.
  • the present invention relates more particularly to the case of placing generators of reference voltages or currents on standby in integrated circuits.
  • These generators are the circuit elements that provide stable levels of voltage or current necessary for the operation of the other elements of the integrated circuit.
  • these reference voltage generators must not provide uncontrolled levels during the re-energizing phases of the integrated circuit after the latter's power supply has been cut off.
  • POR-STBY a logic signal that can be called "POR-STBY”: when this signal is at 1, we are in standby mode ; when it is zero, we are in normal mode; and in addition, this signal undergoes a transition from 1 to 0, established by a restart circuit after power failure (circuit called "Power-On-Reset”), when the supply voltage of the integrated circuit recovers sufficient level after a temporary or long-term shutdown.
  • POR-STBY a logic signal that can be called "POR-STBY”: when this signal is at 1, we are in standby mode ; when it is zero, we are in normal mode; and in addition, this signal undergoes a transition from 1 to 0, established by a restart circuit after power failure (circuit called "Power-On-Reset”), when the supply voltage of the integrated circuit recovers sufficient level after a temporary or long-term shutdown.
  • Power-On-Reset a restart circuit after power failure
  • a reference voltage (or reference current) generator in CMOS technology conventionally comprises at least one current flow branch in which there is in series an N-channel transistor and a P-channel transistor, one of the two having its grid connected to its drain.
  • at least two branches of this type and the two branches are coupled so as to establish mutual recopies of current which are the basis of the realization such reference generators.
  • FIG. 1 represents a typical example of a reference generator, comprising four transistors, P1, P2 (channel P) and N1, N2 (channel N).
  • the P channel transistors have their gates joined and their sources connected to a supply terminal A at a potential Vdd.
  • the N channel transistors have their gates joined and their sources connected to a ground terminal B.
  • the drains of P1 and N1 are connected to constitute a first branch of current; the drains of P2 and N2 are connected to constitute a second branch of current.
  • the gate of P1 is connected to its drain and constitutes a first output S1 providing a first reference voltage VrefP; the gate of N2 is connected to its drain and constitutes a second output S2 providing a second reference voltage VrefN.
  • the circuit of FIG. 1 is therefore a double generator of reference voltages. It is used when it is desired to produce two reference voltages close to the threshold voltages of the N and P transistors respectively of the integrated circuit. Many other examples of generators exist, providing one or more reference voltages.
  • FIG. 2 represents a proposal already made to cut the consumption of the reference generator of FIG. 1 in standby mode, and to restart on the falling edge of the logic signal POR-STBY; this falling edge appears after a standby or after a restoration of the supply voltage Vdd.
  • Transistors Q1 and Q2 cut consumption; the transistor D1 allows the outputs S1 and S2 to leave from the same average level at the time of a restart; the capacitance C makes it possible to strongly unbalance the circuit at the time of restarting (falling edge of POR-STBY) to prevent the reference generator from returning too slowly to its normal state, especially when the transistors which compose it are highly resistive, which is often the case.
  • transfer door is meant a switch which is on or off and which, when it is on, introduces a very low voltage drop.
  • a transfer gate called in English “pass-gate” is constituted by two transistors of opposite conductivity types, placed in parallel and controlled by complementary logic signals (here, the mode signal and its complement).
  • the invention is applicable in particular for a voltage generator such as that of FIG. 1, comprising two branches of current circulation having transistors of the opposite type in series in each branch, the transistors of the two branches being mounted so that each branch copies the current into the other.
  • each of the outputs can be set to a non-floating potential level in standby mode, but it is not necessary to interrupt by a transfer gate the gate-drain link of the reference transistor of each of the branches: a single link can be interrupted as will be explained below.
  • the one that is interrupted is the one that risks introducing a current consumption path in standby mode. This depends on the one hand on the non-floating potentials to which the outputs in standby mode are connected, and on the other hand on the position of the standby mode transistors since these can be connected to one or the other. other of the supply terminals (earth or supply voltage Vdd).
  • the reference voltage or current generator of FIG. 3 is constructed from the basic diagram of FIG. 1. Starting from another basic diagram, it is easy to deduce from the explanations which follow the manner of implementing the present invention.
  • reference voltage generator or reference current generator since voltage and current are inextricably linked in this type of diagram: on the one hand the reference voltage supplied is a voltage transistor source gate and therefore directly represents the current passing through this transistor; and on the other hand this reference voltage is generally used to drive current sources whose function is to copy the current passing through the transistor, current which is therefore a reference current.
  • FIG. 3 the elements common with FIG. 1 have the same references, and the explanations given in connection with FIG. 1 remain valid.
  • the generator has two branches of current flow supplied between the terminals supply A (Vdd) and B (ground). Each branch has at least two transistors in series, P1 and N1 for the first branch, P2 and N2 for the second; but there could be more than two transistors in each branch, in addition to the transistors specifically added for the standby mode.
  • N1 and N2 are N-channel; P1 and P2 are P-channel.
  • the branch transistors are mounted so that each branch copies the current from the other branch. This is a classic arrangement, but other more complex structures are possible.
  • the transistors P1 and P2 are mounted as a current mirror, P2 copying the current into P1, and the transistors N1 and N2 are mounted as a current mirror, N1 copying the current from N2.
  • the transistors P1 and P2 have their gates joined together and their sources connected to the same potential, here the potential Vdd of terminal A.
  • the transistor P1 has, as we will see, its gate connected to its drain in normal operation, but its grid disconnected from its drain in standby mode.
  • a transfer gate PT1 is inserted in the grid-drain link of P1.
  • the transistors N1 and N2 have their gates joined, their sources connected to the same potential in normal operation. This potential is the mass potential. However, transistors Q1 and Q2 are interposed in the source-ground links of the transistors N1 and N2. When these transistors are conductive (normal mode), the sources of N1 and N2 are practically at ground potential and the two branches (P1, N1) and (P2, N2) play their role of mutual current copying. When blocked, the current is interrupted in the two branches and these no longer play their role of mutual current copying. The drain of N2 is connected to its grid.
  • the generator has two outputs S1 and S2 which are taken from the gate connection of P1, P2 (output S1 providing in normal mode a reference voltage VrefP), and from the gate connection of N1, N2 (output S2 providing in mode normal a reference voltage VrefN).
  • the transistors Q1 and Q2 are in this example N-channel transistors mounted between the transistors N1 and N2 and the ground. We will see that they could as well be P channel transistors mounted between transistors P1 and P2 and terminal A. They must then be controlled by an inverse logic level from the case shown in FIG. 3.
  • the circuit has a mode control input for a POR-STBY mode signal.
  • this POR-STBY signal is at logic level 1 in standby mode, and at logic level 0 in normal mode. This signal undergoes a downward transition from 1 to 0 when the mode changes, or also when a restart circuit, not shown, has detected that the supply voltage has become sufficient after an interruption.
  • the POR-STBY signal is therefore a signal obtained both from a mode change command and from the output of a restart circuit after power failure (circuit called "Power-On-Reset") in English).
  • An inverter INV1 provides a logic level NPOR-STBY complementary to the signal POR-STBY.
  • the transistors Q1 and Q2 are controlled by the NPOR-STBY output of the inverter INV1 since they must be conductors in normal mode and blocked in standby mode.
  • the PT1 pass-gate is controlled by the POR-STBY and NPOR-STBY signals so as to be on in normal mode and blocked in standby mode.
  • outputs S1 and S2 are set to non-floating potentials in standby mode. This is to allow a faster restart of the generator when returning to normal mode, and also to possibly allow the use of outputs S1 and S2 for logic purposes on the following stages, even in standby mode.
  • a transistor Q3 and a transistor Q4 make it possible to connect, in standby mode, one of the outputs S1, S2 to ground and the other to Vdd.
  • the transistor Q3 is connected between the output S1 and the ground. It is an N channel transistor controlled by the POR-STBY signal. And a transistor Q4 is connected between the output S2 and the terminal A at Vdd. It is a P channel transistor controlled by the complementary signal NPOR-STBY.
  • Q5 is a P channel transistor connecting S'1 to Vdd in standby mode.
  • Q5 is controlled by NPOR-STBY.
  • Q6 is an N-channel transistor connecting S'2 to ground in standby mode.
  • Q6 is controlled by POR-STBY.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Logic Circuits (AREA)
EP95401983A 1994-08-31 1995-08-31 Integrierte Schaltung mit Sofortstartfunktion von Spannungsquellen oder Referenzstrom Expired - Lifetime EP0699989B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9410500 1994-08-31
FR9410500A FR2724025B1 (fr) 1994-08-31 1994-08-31 Circuit integre avec fonction de demarrage rapide de sources de tension ou courant de reference

Publications (2)

Publication Number Publication Date
EP0699989A1 true EP0699989A1 (de) 1996-03-06
EP0699989B1 EP0699989B1 (de) 1997-03-12

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EP95401983A Expired - Lifetime EP0699989B1 (de) 1994-08-31 1995-08-31 Integrierte Schaltung mit Sofortstartfunktion von Spannungsquellen oder Referenzstrom

Country Status (5)

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US (1) US5642037A (de)
EP (1) EP0699989B1 (de)
JP (1) JP2818646B2 (de)
DE (1) DE69500177T2 (de)
FR (1) FR2724025B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69621020T2 (de) * 1996-11-04 2002-10-24 St Microelectronics Srl Banddistanzreferenzspannungsgenerator
GB2336960B (en) * 1998-05-01 2003-08-27 Sgs Thomson Microelectronics Start up circuits and bias generators
DE10015276A1 (de) * 2000-03-28 2001-10-11 Infineon Technologies Ag Stromerzeugungseinrichtung und Spannungserzeugungseinrichtung
JP4132795B2 (ja) * 2001-11-28 2008-08-13 富士通株式会社 半導体集積回路
US6844711B1 (en) * 2003-04-15 2005-01-18 Marvell International Ltd. Low power and high accuracy band gap voltage circuit
DE102004021232A1 (de) * 2004-04-30 2005-11-17 Austriamicrosystems Ag Stromspiegelanordnung
US7372321B2 (en) * 2005-08-25 2008-05-13 Cypress Semiconductor Corporation Robust start-up circuit and method for on-chip self-biased voltage and/or current reference
US10168363B1 (en) 2018-03-14 2019-01-01 STMicroelectronics Design & Application S.R.O. Current sensor with extended voltage range

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628250A (en) * 1984-11-20 1986-12-09 Thomson Components-Mostok Corporation Power conserving CMOS reference voltage source
US5047706A (en) * 1989-09-08 1991-09-10 Hitachi, Ltd. Constant current-constant voltage circuit
EP0511675A2 (de) * 1991-04-30 1992-11-04 Kabushiki Kaisha Toshiba Halbleitervorrichtung zum Erzeugen von konstanter Spannung
US5258663A (en) * 1990-07-10 1993-11-02 Nec Corporation Reference voltage generating circuit having reduced power consumption

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2260833A (en) * 1991-10-22 1993-04-28 Burr Brown Corp Reference voltage circuit allowing fast power-up

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628250A (en) * 1984-11-20 1986-12-09 Thomson Components-Mostok Corporation Power conserving CMOS reference voltage source
US5047706A (en) * 1989-09-08 1991-09-10 Hitachi, Ltd. Constant current-constant voltage circuit
US5258663A (en) * 1990-07-10 1993-11-02 Nec Corporation Reference voltage generating circuit having reduced power consumption
EP0511675A2 (de) * 1991-04-30 1992-11-04 Kabushiki Kaisha Toshiba Halbleitervorrichtung zum Erzeugen von konstanter Spannung

Also Published As

Publication number Publication date
US5642037A (en) 1997-06-24
JPH0876867A (ja) 1996-03-22
FR2724025B1 (fr) 1997-01-03
EP0699989B1 (de) 1997-03-12
DE69500177D1 (de) 1997-04-17
DE69500177T2 (de) 1997-06-19
JP2818646B2 (ja) 1998-10-30
FR2724025A1 (fr) 1996-03-01

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