DE69500177T2 - Integrierte Schaltung mit Sofortstartfunktion von Spannungsquellen oder Referenzstrom - Google Patents
Integrierte Schaltung mit Sofortstartfunktion von Spannungsquellen oder ReferenzstromInfo
- Publication number
- DE69500177T2 DE69500177T2 DE69500177T DE69500177T DE69500177T2 DE 69500177 T2 DE69500177 T2 DE 69500177T2 DE 69500177 T DE69500177 T DE 69500177T DE 69500177 T DE69500177 T DE 69500177T DE 69500177 T2 DE69500177 T2 DE 69500177T2
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- reference current
- voltage sources
- start function
- instant start
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Direct Current Feeding And Distribution (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9410500A FR2724025B1 (fr) | 1994-08-31 | 1994-08-31 | Circuit integre avec fonction de demarrage rapide de sources de tension ou courant de reference |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69500177D1 DE69500177D1 (de) | 1997-04-17 |
DE69500177T2 true DE69500177T2 (de) | 1997-06-19 |
Family
ID=9466616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69500177T Expired - Fee Related DE69500177T2 (de) | 1994-08-31 | 1995-08-31 | Integrierte Schaltung mit Sofortstartfunktion von Spannungsquellen oder Referenzstrom |
Country Status (5)
Country | Link |
---|---|
US (1) | US5642037A (de) |
EP (1) | EP0699989B1 (de) |
JP (1) | JP2818646B2 (de) |
DE (1) | DE69500177T2 (de) |
FR (1) | FR2724025B1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69621020T2 (de) * | 1996-11-04 | 2002-10-24 | St Microelectronics Srl | Banddistanzreferenzspannungsgenerator |
GB2336960B (en) * | 1998-05-01 | 2003-08-27 | Sgs Thomson Microelectronics | Start up circuits and bias generators |
DE10015276A1 (de) | 2000-03-28 | 2001-10-11 | Infineon Technologies Ag | Stromerzeugungseinrichtung und Spannungserzeugungseinrichtung |
JP4132795B2 (ja) * | 2001-11-28 | 2008-08-13 | 富士通株式会社 | 半導体集積回路 |
US6844711B1 (en) | 2003-04-15 | 2005-01-18 | Marvell International Ltd. | Low power and high accuracy band gap voltage circuit |
DE102004021232A1 (de) * | 2004-04-30 | 2005-11-17 | Austriamicrosystems Ag | Stromspiegelanordnung |
US7372321B2 (en) * | 2005-08-25 | 2008-05-13 | Cypress Semiconductor Corporation | Robust start-up circuit and method for on-chip self-biased voltage and/or current reference |
US10168363B1 (en) * | 2018-03-14 | 2019-01-01 | STMicroelectronics Design & Application S.R.O. | Current sensor with extended voltage range |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4628250A (en) * | 1984-11-20 | 1986-12-09 | Thomson Components-Mostok Corporation | Power conserving CMOS reference voltage source |
JP2804162B2 (ja) * | 1989-09-08 | 1998-09-24 | 株式会社日立製作所 | 定電流定電圧回路 |
JPH0469890A (ja) * | 1990-07-10 | 1992-03-05 | Nec Corp | 基準電圧発生回路 |
JP2647276B2 (ja) * | 1991-04-30 | 1997-08-27 | 株式会社東芝 | 定電位発生用半導体装置 |
GB2260833A (en) * | 1991-10-22 | 1993-04-28 | Burr Brown Corp | Reference voltage circuit allowing fast power-up |
-
1994
- 1994-08-31 FR FR9410500A patent/FR2724025B1/fr not_active Expired - Fee Related
-
1995
- 1995-08-30 US US08/521,516 patent/US5642037A/en not_active Expired - Lifetime
- 1995-08-31 DE DE69500177T patent/DE69500177T2/de not_active Expired - Fee Related
- 1995-08-31 JP JP7246624A patent/JP2818646B2/ja not_active Expired - Fee Related
- 1995-08-31 EP EP95401983A patent/EP0699989B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5642037A (en) | 1997-06-24 |
DE69500177D1 (de) | 1997-04-17 |
FR2724025B1 (fr) | 1997-01-03 |
JP2818646B2 (ja) | 1998-10-30 |
EP0699989B1 (de) | 1997-03-12 |
EP0699989A1 (de) | 1996-03-06 |
FR2724025A1 (fr) | 1996-03-01 |
JPH0876867A (ja) | 1996-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |