EP0698297A1 - Dispositif electronique a electrodes microstructurees et son procede de fabrication - Google Patents

Dispositif electronique a electrodes microstructurees et son procede de fabrication

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Publication number
EP0698297A1
EP0698297A1 EP94916956A EP94916956A EP0698297A1 EP 0698297 A1 EP0698297 A1 EP 0698297A1 EP 94916956 A EP94916956 A EP 94916956A EP 94916956 A EP94916956 A EP 94916956A EP 0698297 A1 EP0698297 A1 EP 0698297A1
Authority
EP
European Patent Office
Prior art keywords
layer
laser radiation
semiconductor material
amorphous
interference pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP94916956A
Other languages
German (de)
English (en)
Inventor
Martin Stutzmann
Christoph Nebel
Paulo V. Santos
Moritz Heintze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Original Assignee
Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max Planck Gesellschaft zur Foerderung der Wissenschaften eV filed Critical Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
Publication of EP0698297A1 publication Critical patent/EP0698297A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electronic device with the features listed in the preamble of claim 1.
  • the invention further relates to advantageous methods for producing such devices.
  • the operating behavior of many electronic devices is determined by the configuration and structure of the electrodes Lich influenced.
  • a typical example is thin-film solar cells with a layer of amorphous silicon (a-Si).
  • a-Si amorphous silicon
  • photocells in particular solar cells
  • Thin-film silicon solar cells with a pin structure currently appear to be the most promising.
  • Such solar cells usually contain a so-called absorber layer made of essentially intrinsically conductive amorphous silicon, which is arranged between an n-doped and a p-doped layer of amorphous silicon.
  • Solar cells made of a-Si require significantly less material than solar cells made of monocrystalline silicon (c-Si), since a-Si absorbs light in the visible spectral range much more strongly than c-Si, so that a-Si solar cells with layer thicknesses in of the order of magnitude of a few hundred nanometers, whereas for solar cells made of c-Si layer thicknesses of the order of 100 to 300 ⁇ m are required in order to achieve sufficient absorption of the light in the visible spectral range.
  • Layers made of a-Si are also easier and less expensive to produce than monocrystalline silicon wafers, as are required for c-Si solar cells.
  • the thickness of the absorber layer consisting of essentially intrinsically conductive a-Si and thus the necessary diffusion paths of the charge carriers have been reduced.
  • the surface of the pin layer structure opposite the light incidence side has been mirrored and the interface between the TOC layer from the electrically conductive oxide and the adjacent silicon layer structured in such a way that the incoming light is refracted and / or scattered at this interface.
  • the present invention is based on the object of improving the efficiency of a generic electronic device.
  • the interfaces between the absorber layer and the p-layer and n-layer acting as electrodes are flat, i.e. their roughness is within production-related limits, or because of the structuring of the electrically conductive oxide layer made for optical reasons, they have a relatively coarse structure which has no significant influence on the shear paths of the photogenerated electrons or defect electrons (holes).
  • the present solid-state devices such as, for example, a-Si thin-film photocells
  • at least one of the two interfaces mentioned, preferably both interfaces of the electrodes are microscopically structured, that is to say they form a type of microscopic relief pattern, which is preferably periodic.
  • the term "microscopic” is intended to include structures lateral distances between the structural elements are less than about 1 ⁇ m, preferably between about 50 and 500 nm, and have a roughness that is substantially greater than the roughness caused by production and is, for example, at least 10% of the thickness of the absorber layer or at least 50 nm.
  • the elevations of one interface protruding into the absorber layer are in a gap with elevations or corrugations of the other interface protruding into the absorber layer.
  • the elevations can generally have a height of up to approximately 50% of the thickness of the absorber layer.
  • the invention further relates to a preferred method for producing such structured interfaces or electrode surfaces.
  • this structuring takes place thermally by means of a laser radiation interference utter.
  • Such methods are known per se, but they have not previously been used for structuring electrode surfaces and producing electrode patterns.
  • the holographic generation of diffraction gratings by means of a laser radiation interference pattern is known from a publication by Ahlhorn et al, SPIE Vol. 1023 Excimer Lasers and Applications (1988) pp. 231-234. From a publication by Portnoi et al, Sov. Tech. Phys. Lett. 8 (4), April 1982, pp. 201, 202, annealing of gallium phosphide films by laser radiation is known.
  • Figure 1 is a schematic, greatly enlarged, sectional schematic diagram of a solar cell according to an embodiment of the invention.
  • FIG. 2 shows a greatly enlarged, schematic illustration of the course of the electric field (dashed) and the charge carrier thrust path regions (dotted) in the absorber layer of a solar cell of the type shown in FIG. 1 with two structured electrode layers, the charge carrier thrust path being denoted by "s" is;
  • FIG. 3 shows a representation corresponding to FIG. 2 of a solar cell with a configuration optimized with regard to the carrier collection efficiency, in which only one electrode layer has been structured;
  • FIG. 4 shows a simplified, greatly enlarged, simplified illustration of a practical embodiment of a solar cell according to the invention according to FIG. 3;
  • FIG. 5 shows a perspective illustration of a zero-dimensional or point-like relief structure which can be used in an electrode interface of a solar cell or other semiconductor device according to the invention
  • FIG. 6 shows a representation of another, one-dimensional or line-like relief structure; 7 with the FIGS. 7a to 7e schematic sectional views for explaining a preferred method for producing a photocell according to FIG. 4;
  • Fig. 8 is a schematic representation of an apparatus for
  • FIG. 9 shows a simplified perspective illustration of a solar cell with microstructured electrodes according to a further embodiment of the invention
  • Fig. 10 is a perspective view of another
  • Embodiment of a solar cell with microstructured electrodes according to an embodiment of the invention.
  • the solar cell shown in FIG. 1 contains a transparent substrate 10, on which a thin, transparent, electrically conductive electrode layer 12 (TCO layer), a first, p-type layer 14 made of microcrystalline silicon, and an absorber layer 16 made of intrinsically conductive amorphous Si: H and finally an n-conducting layer 18 made of microcrystalline silicon.
  • Layer 14 and / or layer 18 can be mixed with carbon and / or germanium (Si-C, Si-Ge) to increase their transparency, in particular in the blue region of the solar spectrum and / or to increase the internal electric field.
  • the doped layers 14 and 18 serving as electrodes can generally be amorphous or monocrystalline and, in addition to Si, can also contain Si-O, Si-C, Si-N or Si-Ge.
  • the interfaces 20, 22 are between the absorber layer 16 and the Layer 14 or layer 18 is smooth except for a production-related roughness, in particular even, or they have a relatively coarse structure if the TCO layer 12 is designed as an optical “prism” layer to enlarge the light paths in the absorber layer.
  • at least one of these boundary layers 20, 22, preferably at least the boundary layer 20 of the electrode layer 14 which receives the defect electrons (holes), has a relief-like microscopic structure which is independent of any structure of the boundary surface of the substrate facing away from the substrate TCO layer 12 or in addition to such a structure is provided.
  • this structure is periodic, for example it can be point-like (zero-dimensional) or line-like (one-dimensional).
  • the lateral distances L of the structural elements 14a, 18a should be of the order of the length of the charge carrier pushing paths. In practice, L is expediently smaller than about lym and can be, for example, between 100 nm and 500 nm.
  • the structures of the two boundary layers are at least approximately complementary, that is to say that, as shown in FIG. 1, elevations 14a of the layer 14 which extend into the layer 16 to a gap with elevations 18a of the layer 18 that extend into the absorber layer 16 are.
  • the roughness that is to say the distance d calculated perpendicular to the layer plane between the valleys and the peaks of the relevant interface 20 or 22, is considerably greater than the roughness caused by production and is considerably smaller than in the case of a structuring TOC layer and can in practice be at least 10 % up to 50% or more of the thickness D of the layer 16.
  • the structure and roughness of the interface 20 can differ from that of the interface 22.
  • One of these interfaces can also be smooth.
  • the period L or the mean spacing of the tips or projections 14a or 18a is expedient approximately equal to twice the drift length of the charge carriers in the absorber layer 16.
  • the structuring of the interfaces results in a better collection efficiency for the defect electrons in the absorber layer due to higher local electrical fields or better electrode geometry, as the field lines in FIGS. 2 and 3 show.
  • the microstructuring also increases the length of absorption of the incident light by diffraction and / or multiple reflection, so that the thickness of the absorber layer can be reduced. Further advantages are: Slower and reduced degradation through reduced recombination.
  • the microcrystalline structure of the layers 14, 18, which also act as electrodes, results in a high degree of transparency because of the indirect band structure. By adding carbon, a high transparency of the microcrystalline layer 14 working as a window can be achieved.
  • the transparency of the microcrystalline silicon layers 14, 18 can be increased by adding carbon in the blue part of the solar spectrum. An expensive and difficult to optimize structuring of the transparent TCO layer 12 is no longer absolutely necessary, since the microstructure of the electrode interface (s) has a scattering effect.
  • the microcrystalline structure of the layers 14 and 18 has the further advantage that photogenerated charge carriers from these layers reach the amorphous absorber layer 16 by diffusion and thus contribute to an increase in the efficiency.
  • the single-crystal crystals of the microcrystalline material forming layers 14 and 18 protrude like needles into the intrinsic absorber material of layer 16, which ensures effective charge carrier collection and dissipation.
  • the significantly higher doping efficiency of the crystalline material compared to the amorphous material creates an abrupt interface at the transition from crystalline to amorphous, which results in high electric fields at the interface.
  • 4 shows in simplified form a practical exemplary embodiment of a silicon solar cell according to the invention. The same parts as in Fig. 1 are given the same reference numerals.
  • the microcrystalline p-layer 14 has a periodic structure, which is formed by projections 14 a, which extend into the amorphous silicon layer 16.
  • the interface 22 of the amorphous layer 16 opposite the layer 14 has a wavy structure which is at least approximately complementary to the interface 20.
  • the configuration is thus similar to that in FIG. 3, because of the tuft-like course of the electrical field lines from the projections 14a to the opposite, approximately concentric, dome-shaped surface areas of the boundary layer 22 with regard to the field distribution and carrier collection.
  • the projections 14a can be point-like structures 14al, as shown in FIG. 5, or line-like structures 14a2, as shown in FIG. 6.
  • the increases 14a, 14al and 14a2 can be generated by selective irradiation during the production of the layer, e.g. by means of laser radiation, the structures being able to be produced by interference.
  • the point-like structure can be created by two intersecting interference fringe patterns.
  • the first step is to deposit a transparent, electrically conductive oxide layer 12, for example made of indium oxide.
  • the production of the actual photocell is then - preferably, as well as for the production of the other Si layers, deposited by means of a plasma CVD method - p -conducting microcrystalline silicon or Si-C as an electrode layer 14 over a large area (FIG. 7a).
  • a thin, lightly doped (e.g. p-doped) layer 15 made of amorphous silicon is applied to the layer 14 (FIG. 7b).
  • This layer is next structured by laser interference recrystallization (Fig. 7c).
  • an interference pattern is generated from the laser radiation (not shown) on the surface of the lightly doped layer 15, as a result of which this layer is selectively recrystallized in regions 15a (which correspond to the projections 14a in FIG. 4) of increased radiation density (FIG. 7c ).
  • the amorphous residual layer 15b can be removed by plasma etching.
  • a selective growth of the microcrystalline phase and additionally an etching of the amorphous phase can be achieved at the same time.
  • repeated irradiation during the deposition of additional amorphous silicon can result in the amorphous-microcrystalline conversion, thus increasing the size of the microcrystallites (FIG. 7d).
  • the microstructured layer is expediently optimized by hydrogen passivation, and a new, amorphous intrinsically conductive layer 16, which ensures an optimized interface with the microcrystalline silicon, is then grown (FIG. 7e). It forms the layer 16 serving as an optical absorber and can be improved by alloying with hydrogen and / or generating a doping atom gradient to improve the Charge carrier efficiency can be optimized.
  • the absorber layer 16 is preferably produced by P-CVD with SiH. in a hydrogen-containing atmosphere, whereby H is built into the resulting amorphous Si of layer 16. This layer automatically receives a structured surface corresponding to the interface 22, which, viewed from the inside of the layer 16, is approximately complementary to the interface 20.
  • the thin, n-doped layer 18 is then produced on the surface of this amorphous silicon layer, which, if appropriate together with an electrically conductive oxide layer or a light-reflecting metal layer 24, for example from Al or Ag f, forms the second electrode (FIG. 7e).
  • the layer sequence can be inverted.
  • the layers are preferably deposited by a plasma CVD method, but can also be done by sputtering or sputtering.
  • the atmosphere receives hydrogen in the relevant process step. All steps can be carried out in succession without breaking the vacuum.
  • the process is fully compatible with the conventional manufacturing processes for a-Si solar cells.
  • a doped yc-Si layer 14 is produced on the TCO layer, and projections 14a are formed thereon by laser radiation-induced selective deposition of yc-Si, as is shown in FIG. 4.
  • the a-Si absorber layer, the second doped electrode layer 18 and finally the metal layer 24 are then deposited on this structured electrode layer after passivation with hydrogen.
  • a preferred, practical embodiment of the invention with a configuration according to FIG. 4 had the following parameters:
  • Interface 20 line structure, d approx. 200 nm,
  • Interface 22 wavy structure complementary to 20 d approx. 100 500 nm
  • the equipment acc. 8 shows an apparatus for generating a line-shaped laser radiation interference pattern, as can be used when carrying out the method described above for producing structured electrodes.
  • the equipment acc. 8 contains a laser 30, e.g. B. an Nd-YAG or excimer laser that provides a coherent beam 32.
  • the radiation beam 32 is divided by a beam splitter 34 into two partial beams, which are thrown by mirrors 36, 38 at a predetermined angle onto a surface to be structured, for example that Surface of an a-Si layer 15 (FIG. 7b) on a substrate 10.
  • the substrate 10 is located in a vacuum chamber, not shown, in which the PVCD process is carried out.
  • the laser 30, the beam splitter 34, the mirrors 36 and 38 can be located outside the vacuum chamber, in which case the partial bundles reflected by the mirrors are irradiated into the vacuum chamber through suitable windows.
  • the microstructuring is determined by the choice of the laser radiation wavelength, the angle of incidence and the mirror arrangement. The structuring by short exposure to intense laser pulses is particularly advantageous.
  • contact strips made of metal or doping profiles can also be produced by the action of a laser radiation interference pattern.
  • the surface on which the electrodes are to be produced is covered with metal, e.g. Cr is evaporated and then the microstructuring is carried out by evaporating strip-shaped regions of the continuous layer by means of the laser radiation interference pattern, an electrode then being obtained from periodic metal strips.
  • metal e.g. Cr is evaporated and then the microstructuring is carried out by evaporating strip-shaped regions of the continuous layer by means of the laser radiation interference pattern, an electrode then being obtained from periodic metal strips.
  • Microstructured doping patterns or profiles can be generated in that an amorphous and already doped semiconductor layer (for example with boron, phosphorus, arsenic, gallium etc.) is recrystallized in a location-specific manner, with the electronic activation of the doping atoms taking place simultaneously in the crystallized regions.
  • the remaining amorphous layer can then - as already described above - be removed.
  • the amorphous silicon can be doped, for example, by adding phosphine or diborane to the silane in the plasma CVD.
  • a doped structuring layer is particularly important for use in solar cells (for producing p- or n-contacts).
  • Microstructured doping patterns or profiles can also be generated, for example, by using a dopant source, e.g. Borosilicate glass, doped amorphous silicon, etc. applied to the surface of a semiconductor body and then selectively diffuses the dopant into the semiconductor body by the action of a laser radiation interference pattern.
  • a dopant source e.g. Borosilicate glass, doped amorphous silicon, etc.
  • the dopant source can also be a gas or vapor.
  • the solar cell acc. 9 contains a back contact made of a p-type layer analogous to the layer 14 in FIGS. 4 and 7e, an amorphous, crystalline or monocrystalline absorber layer 42 corresponding to the absorber layer 16, an n-type contact layer 43, an anti-reflective layer 4 and an in the metal contact layer 45 shown broken away in the middle.
  • the strip-shaped n-type contact 43 is produced by diffusion of doping atoms from the gas phase or a doped layer (not shown) by means of a laser radiation interference pattern.
  • FIG. 10 shows a further solar cell with microstructured electrodes. It contains a substrate 51, a passivation or antireflection layer 52, an active amorphous or crystalline absorber layer 53, a p-type back contact 54, an n-type contact 55, an antireflection layer 56 and a metal contact layer 57, which is shown partly broken away .
  • the strips of the n-type contact and / or the p-type contact are produced with interfering laser radiation by diffusion of doping atoms, for example from the gas phase or a doped layer.
  • the dot-like or stripe-like crystalline areas are remelted as single crystals in a second step, either thermally or by homogeneous laser radiation.
  • the seed crystals can have a different doping than the subsequently applied polycrystalline layer. This can e.g. each crystal can be provided with its own point contact, whereby the influence of the grain boundaries on charge carrier transport can be reduced.
  • a structure as described above would be of particular interest for applications in photovoltaics (poly-Si cell on "cheap” substrate) but also for large-area electronics and three-dimensional integration. 2. Production of non-periodic structures in the ym or sub-ym range using the laser recrystallization method by holography and etching.
  • a two-dimensional hologram is generated at the location of the film using suitable and known methods, which can now be used to emboss any pattern in principle by laser pulse crystallization. This is actually only a subset of the original method, but the absence of periodicity of the interference pattern allows other applications.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dispositif électronique, notamment cellule solaire, comprenant une couche (16) en silicium amorphe (a-Si) et au moins deux électrodes stratifiées (14, 18) présentant chacune une face limite (20, 22) adjacente à la couche (a-Si) (16), dans lequel au moins l'une des électrodes (14) présente des éléments de structure (14a) formant une microstructure de préférence périodique. La distance moyenne des éléments de structure est, de préférence, de l'ordre de grandeur de la longueur du trajet du porteur de charge, et est généralement inférieure à 1 νm et comprise notamment entre 50 et 500 nm. La microstructure est avantageusement obtenue par action d'un modèle interférentiel à rayon laser.
EP94916956A 1993-05-12 1994-05-11 Dispositif electronique a electrodes microstructurees et son procede de fabrication Withdrawn EP0698297A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4315959A DE4315959C2 (de) 1993-05-12 1993-05-12 Verfahren zur Herstellung einer strukturierten Schicht eines Halbleitermaterials sowie einer Dotierungsstruktur in einem Halbleitermaterial unter Einwirkung von Laserstrahlung
DE4315959 1993-05-12
PCT/EP1994/001536 WO1994027326A1 (fr) 1993-05-12 1994-05-11 Dispositif electronique a electrodes microstructurees et son procede de fabrication

Publications (1)

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EP0698297A1 true EP0698297A1 (fr) 1996-02-28

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US (1) US5810945A (fr)
EP (1) EP0698297A1 (fr)
JP (1) JPH08509839A (fr)
AU (1) AU6843894A (fr)
DE (1) DE4315959C2 (fr)
WO (1) WO1994027326A1 (fr)

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DE4315959A1 (de) 1994-11-24
WO1994027326A1 (fr) 1994-11-24
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US5810945A (en) 1998-09-22
AU6843894A (en) 1994-12-12

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