EP0683623A1 - Gegenstand mit Mikrohohlraum-Lichtquelle - Google Patents

Gegenstand mit Mikrohohlraum-Lichtquelle Download PDF

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Publication number
EP0683623A1
EP0683623A1 EP95303140A EP95303140A EP0683623A1 EP 0683623 A1 EP0683623 A1 EP 0683623A1 EP 95303140 A EP95303140 A EP 95303140A EP 95303140 A EP95303140 A EP 95303140A EP 0683623 A1 EP0683623 A1 EP 0683623A1
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EP
European Patent Office
Prior art keywords
layer
microcavity
article according
cavity
article
Prior art date
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Granted
Application number
EP95303140A
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English (en)
French (fr)
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EP0683623B1 (de
Inventor
Ananth Dodabalapur
Lewis Josiah Rothberg
Timothy Mark Miller
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AT&T Corp
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AT&T Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/852Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/36Structure or shape of the active region; Materials used for the active region comprising organic materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/917Electroluminescent

Definitions

  • This invention pertains to microcavity light sources, and to articles (e.g., displays) that comprise such sources.
  • Prior art optical microcavities are resonators that typically have at least one dimension (herein typically the effective optical length of the cavity) on the order of an optical wavelength. It has been recognized that such resonators not only are interesting for fundamental research purposes but also hold technological promise for constructing novel kinds of light emitting devices. See, for instance, H. Yokoyama, Science , Vol. 256, pp. 66-70, which inter alia discloses a microcavity structure that contains a dye solution. See also Y. Yamamoto et al., Physics Today , pp. 66-73, June 1993. Possible applications of such microresonator light emitting devices are, for instance, in the fields of flat panel displays, back lights, optical interconnects, optical fiber communications and LED printing.
  • US patent application Serial No. 08/156,217 filed by us on November 22, 1993, discloses an apparatus that comprises at least two microcavity light emitters that differ in their cavity length, such that the microcavities emit radiation of a first and a second wavelength, respectively. See also A. Dodabalapur et al., Applied Physics Letters , Vol. 64(19), p. 2486.
  • At least some technological fields require emission of light of a specified apparent color, e.g., white.
  • Such emissions are typically achieved through mixing of the emission from two or more different types of LED. See, for instance, K. Murata, Display Devices , pp. 47-50, 1992. Alternatively they can be achieved by incorporation of fluorescent dyes of different color into an organic LED. See J. Kido et al., Applied Physics Letters , Vol. 64 (7), p. 815 (1994), and G. E. Johnson et al., SPIE , Vol. 1910, p. 6. Exemplarily, devices that emit white light would be of interest for, e.g., low voltage portable backlit displays.
  • the invention is defined by the claims. It is embodied in an article that comprises one or more multimode microcavity light emitters, with a given emitter adapted for simultaneous emission of radiation of two or more predetermined colors (e.g., blue and red), such that a desired apparent color results.
  • a given emitter adapted for simultaneous emission of radiation of two or more predetermined colors (e.g., blue and red), such that a desired apparent color results.
  • the article comprises a layer structure on a major surface of a substrate body (e.g., a glass plate).
  • the layer structure comprises spaced apart first and second reflector means and an active layer that comprises organic material capable of electroluminescence (e.g., 8-hydroxyquinoline aluminum, generally referred to as Alq; such material will be referred to as "EL" material), with at least a portion of the active layer disposed between the reflector means.
  • the first and second reflector means define a microcavity of effective optical length L.
  • the layer structure further comprises means that facilitate flowing a current through the active layer such that the microcavity can be caused to emit radiation.
  • the effective optical length L of the cavity is selected such that the cavity is a multimode cavity that can be caused to simultaneously emit radiation of two or more predetermined colors.
  • a “multimode” microcavity we mean herein a microcavity which simultaneously supports two or more standing wave modes of the cavity.
  • the wavelengths of the two or more modes will lie within the emission region of the EL spectrum of the EL material.
  • L is selected such that at least one of the modes is a third or higher order standing wave mode of the microcavity.
  • L is selected such that the 7th, 8th and 9th modes are simultaneously supported by the cavity.
  • Typical embodiments of the invention will comprise a multiplicity of emitter structures as described above. Although frequently all these multimode emitters will emit light of substantially the same apparent color, this is not necessarily so, and articles that comprise two or more species of the multimode emitter, or one or more species of the multimode emitter and one or more species of the prior art microcavity emitter, are contemplated.
  • the active layer can comprise, in addition to the organic EL material, one or more additional layers, e.g., an electron or hole transport layer and/or an electron or hole blocking layer, and/or a filler layer.
  • the EL material will typically be a single layer, and typically consist of an emissive compound or a host material doped with an emitter species.
  • the emission spectrum of the EL material in a microcavity according to the invention is a function of the cavity length L, with the spectrum changing as L is varied. This inter alia distinguishes embodiments of the instant invention from the devices disclosed for instance by J. Kido et al. (op. cit.) in which the electroluminescence spectrum of the EL material has three peaks, due to the presence of three different dyes in the material, with the wavelengths of the peaks substantially determined by the nature of the dyes.
  • FIG. 1 schematically shows the layer structure associated with an exemplary single multimode microcavity according to the invention, wherein numeral 10 refers to the substrate, numerals 11-15 refer to the multilayer mirror, filler layer, transparent conductor, hole transport layer and EL layer, respectively.
  • layer 14 could be the EL layer, and 15 could be the electron transport layer.
  • the structure can comprise an electron transport layer and a hole transport layer, with the EL layer sandwiched between the two transport layers.
  • Numeral 16 refers to a portion of a patterned metal layer that serves as top electrode and as top reflector, and that defines the lateral extent of the microcavity. The lateral extent of region 16 will typically be much greater than (exemplarily at least 5 times) the effective optical length of the cavity.
  • the substrate is substantially transparent to radiation of the relevant wavelengths.
  • substantially transparent we mean herein that, over the relevant distance, the attenuation of radiation of the relevant wavelengths is typically not more than 25%.
  • Exemplary substrate materials are glass (including glass coated on one or both sides with a high refractive index material such as TiO2), sapphire, quartz, or transparent plastic such as poly(ether sulfone).
  • the multilayer mirror consists of alternating layers of substantially non-absorbing materials of appropriately chosen thickness. Typically each layer is of thickness ⁇ /4, where ⁇ is advantageously chosen to correspond approximately to the center wavelength of the EL emission spectrum, e.g., about 550 nm. Such mirrors are well known.
  • the reflectivity of the mirror depends in a known way on the number of layer pairs, layer thickness and the refractive index of the materials used. Exemplary material pairs are SiO2 and SiN x , and SiO2 and TiO2.
  • the filler layer can be any substantially transparent material that is chemically stable under the manufacturing and operating conditions and that can be patterned by an appropriate technique.
  • Exemplary filler materials are transparent polymers (e.g., a polyimide) or transparent inorganic dielectrics (e.g., SiO2 or Si3N4).
  • the transparent (or semitransparent) conductor exemplarily is indium tin oxide (ITO) or a conducting polymer such as doped polyaniline, or a thin layer (e.g., about 10 nm) of metal (e.g., Au or Al), and may be unpatterned or patterned (e.g., into rows or columns).
  • ITO indium tin oxide
  • a conducting polymer such as doped polyaniline
  • metal e.g., Au or Al
  • the (optional) hole transport layer can be any substantially transparent material that can facilitate the transport of holes to the EL layer, where electron-hole recombination takes place.
  • suitable materials are diamines (e.g., N, N'-diphenyl-N, N'-bis (3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine) and poly(phenylene vinylenes).
  • Exemplary EL materials are Alq, aromatic hydrocarbons, poly(phenylene vinylenes), oxadiazole and stilbene derivatives.
  • the EL material optionally can be a stable non-emissive host material doped with an emissive material which has an energy gap that is less than that of the primary component of the EL material. Examples of such dopants are coumarins or 4-(dicyanomethylene)-4H-pyrans in Alq. See, for instance, C. W. Tang et al., J. Applied Physics , Vol. 65, p. 3610 (1989).
  • Such doping can be used for preliminary modification of the electroluminescence (EL) spectrum of the material and/or for enhancing the efficiency of the device. It will be understood that the emission region of the EL spectrum of the EL material must overlap the relevant cavity modes of the microcavity.
  • An (optional) electron transport layer can be any substantially transparent material that can facilitate electron transport from the relevant electrode to the EL layer.
  • exemplary of such materials are 2-(4-biphenyl)-5-phenyl-1, 3, 4-oxadiazole (PBD), butyl PBD, or either of these doped in an inert polymer such as poly(methyl methacrylate) (PMMA) or a poly(carbonate).
  • the metal layer serves to inject electrons into the adjacent layer, and can be a single layer or a multi-layer combination of metals.
  • Exemplary low work function materials for use as metal contacts are Al, In, Mg, Ca, or alloys, e.g., MgAg.
  • EL material can make possible elimination of one (possibly both) of the hole transport layer and the electron transport layer.
  • Alq can function both as EL material and electron transport medium
  • poly(phenylene vinylene) can function both as EL material and hole transport medium.
  • Microcavities according to the invention can also be embodied in top-emitting structures.
  • the substrate need not be transparent. It can be a metal (with an appropriate insulator provided) or a semiconductor, e.g., Si.
  • FIG. 2 schematically shows an exemplary layer structure for a top-emitting microcavity, wherein numerals 20, 26 and 29 refer respectively to the substrate, the patterned metal layer and the (optional) electron transport layer, and numerals 25-21 refer, respectively, to the EL layer, (optional) hole transport layer, transparent conductor layer, (optional) filler layer, and multilayer mirror.
  • Some embodiments of the invention may also comprise a scattering layer that serves to randomize the emission over a large solid angle, thereby eliminating or at least reducing the angular dependence of the emission. This dependence, which is due to Fabry-Perot cavity effects, may be undesirable in some applications, e.g., for displays, and displays according to the invention may comprise such a layer.
  • FIG. 2 illustrates a (top-emitting) embodiment that comprises scattering layer 28.
  • the scattering layer exemplarily is disposed between substrate and multi-layer mirror.
  • a scattering layer is a substantially transparent polymer (e.g., a polyimide or PMMA) with a colloidal dispersion (e.g., fumed silica) therein. It could also be a substantially transparent layer (e.g., SiN x ) with a mechanically rough surface.
  • a substantially transparent polymer e.g., a polyimide or PMMA
  • a colloidal dispersion e.g., fumed silica
  • An article according to the invention typically comprises, in addition to the above described multimode microcavity emitter or array of emitters, conventional components such as a power supply and drive circuitry. Any appropriate circuitry can be used to drive such a display. See, for instance, K. Murata, op. cit., which discloses at p. 49, FIG. 9 a matrix driving circuit which could be used in a display according to the invention.
  • the transparent conductor e.g., 13
  • the transparent conductor is a substantially uniform layer of lateral extent at least approximately equal to the size of the display, or it is patterned into strips, a given strip associated with a given row (or column) of the display.
  • embodiments of the invention typically will comprise one or more (e.g., dozens or even thousands) of multimode microcavities of a given effective optical length that can be caused to emit multicolor radiation.
  • any apparent color can be produced by appropriate selection of the wavelength and intensity of two or more color components. See, for instance, FIG. 3, which shows the well known CIE chromaticity diagram.
  • a significant aspect of microcavity emitters according to the invention is selection of the optical thickness of the cavity such that the cavity is a multimode cavity, with two or more modes being simultaneously supported by the cavity.
  • the total optical thickness L of a cavity of the type shown in FIGs. 1 and 2 is given by the following expression:
  • the first term in expression (1) is due to the effective penetration depth in the multilayer reflector
  • the second term is the sum of the optical thicknesses of the layers in the cavity
  • the last term is due to the phase shift at the top mirror.
  • Parameter ⁇ is the relevant wavelength
  • n eff is the effective refractive index of the multilayer reflector
  • ⁇ n is the index difference between the two materials that make up the multilayer reflector
  • n i and L i are the refractive index and actual thickness of the i'th layer in the cavity
  • ⁇ m is the phase shift at the top mirror.
  • the phase shift is given by where n s is the refractive index of the material that is in contact with the top mirror, and n m and k m are the real and imaginary parts of the refractive index of the top mirror material.
  • a display according to the invention can comprise microcavity emitters of more than one optical thickness. Indeed, it is possible to combine in one display one or more multimode emitters as described herein with one or more single mode emitters.
  • a display that is to comprise multimode microcavity emitters of optical thickness L and L' it is frequently advantageous to vary the thickness of the filler layer while keeping all other thicknesses constant.
  • the same effect can be achieved by changing the thickness of any of the other layers in the cavity, e.g., of the transparent conductor layer 13, of the optional hole transport layer 14, or of the EL layer 15, and all these possibilities are contemplated.
  • we currently prefer provision and selective thinning of an appropriate filler layer since the latter operation is typically currently more readily controllable with filler materials such as polyimide or SiO2 than it is with other layer materials, e.g. ITO, Alq or diamine.
  • FIGs. 4 and 5 each show the emission spectrum of an exemplary multimode microcavity according to the invention.
  • the emitter that yielded the spectrum of FIG. 4 was a bottom emitting device similar to the device of FIG. 1, and comprised, on a glass substrate, a quarter wave SiO2/Si x N y (92/62 nm) stack, a 835 nm silicon nitride filler layer, a 11.5 nm Au hole injection contact layer, a 100 nm tri-phenyl diamine hole transport layer, a 70 nm Alq EL layer, and a patterned Al electron injection contact and top mirror.
  • the total effective cavity length of this structure was about 2.5 ⁇ m.
  • the emission spectrum of the described structure has three well defined peaks, with relatively little intensity outside of the peaks. The apparent color of the emission was orange-red.
  • FIG. 5 shows the emission spectrum of another exemplary multimode emitter.
  • the structure was substantially as described above, except that the filler layer thickness was about 40 nm, the hole injection contact layer was 55 nm ITO, and the Alq EL layer thickness was 30 nm. The apparent color of the emission was white.
  • the emission spectrum (and thus the apparent color) of the multimode microcavity emitter can be changed by changing the optical length of the cavity. This, however, is not the only way to control the apparent color.
  • the apparent color can also be changed by changing the position of the re-combination region of the device (exemplarily the Alq/diamine interface) with respect to the nodes/antinodes of the modes supported by the cavity.
  • FIG. 7 schematically depicts an exemplary standing wave intensity pattern in a multimode cavity defined by reflectors 70. Intensity patterns 71-73 represent a third, fourth and fifth order mode, respectively.
  • a particular spectral peak will be relatively intense if the mode that corresponds to the peak has an antinode in the re-combination region.
  • the amplitude of the peak can be relatively weak. For instance, changing, in the structure that yielded the spectrum of FIG. 5, the EL layer thickness to 70 nm resulted in the spectrum of FIG. 6, with substantially reduced height of the lower wavelength peak relative to the higher wavelength peak.

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EP95303140A 1994-05-20 1995-05-10 Gegenstand mit Mikrohohlraum-Lichtquelle Expired - Lifetime EP0683623B1 (de)

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US246439 1994-05-20
US08/246,439 US5478658A (en) 1994-05-20 1994-05-20 Article comprising a microcavity light source

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EP0683623B1 EP0683623B1 (de) 1999-07-21

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0814642A1 (de) * 1996-06-22 1997-12-29 Ultra Silicon Technology (UK) Limited Wirkungsverbesserung der elektrolumineszierende Anodnungen
US5949187A (en) * 1997-07-29 1999-09-07 Motorola, Inc. Organic electroluminescent device with plural microcavities
WO2000076010A1 (en) * 1999-06-02 2000-12-14 Seiko Epson Corporation Multiple wavelength light emitting device, electronic apparatus, and interference mirror
EP1124274A1 (de) * 2000-02-09 2001-08-16 Motorola, Inc. Organisches elektrolumineszentes Gerät
WO2001015246A3 (en) * 1999-08-20 2001-09-20 Seiko Epson Corp Multiple-wavelength light emitting device
EP1154676A1 (de) * 1999-11-22 2001-11-14 Sony Corporation Anzeigevorrichtung
US6362566B2 (en) 1998-09-11 2002-03-26 Motorola, Inc. Organic electroluminescent apparatus
GB2369428A (en) * 2000-11-22 2002-05-29 Imperial College Micro total chemical analysis system with integrated fluid sample channels and organic semiconductor light emitters and detectors
EP1494326A1 (de) * 2003-06-30 2005-01-05 Eastman Kodak Company Herstellungsverfahren eines organischen Vielfachlasers mit vertikalem Resonator und dielektrischem Stapel mit geätzter Zone
WO2005101541A1 (en) * 2004-04-07 2005-10-27 Eastman Kodak Company Color oled with added color gamut pixels
US7385655B2 (en) 2002-09-02 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit device with optical sensors and optical shutters at specific locations
US7459726B2 (en) 2003-02-12 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a light emitting element and a light receiving element
US7505487B2 (en) 2003-04-23 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Laser oscillator including phosphorescent material
US7769253B2 (en) 2002-09-02 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit device
US7812520B2 (en) 2003-07-01 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Full color display based on organic light-emitting device
US8283679B2 (en) 2003-06-30 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having light-emitting element and light-receiving element for transmitting among circuits formed over the plurality of substrates
US8471456B2 (en) 2004-10-12 2013-06-25 Koninklijke Philips Electronics N.V. Electroluminescent light source with improved color rendering
WO2021108298A1 (en) 2019-11-26 2021-06-03 OLEDWorks LLC Multimodal microcavity oled with multiple blue-emitting layers

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804919A (en) * 1994-07-20 1998-09-08 University Of Georgia Research Foundation, Inc. Resonant microcavity display
US6614161B1 (en) * 1993-07-20 2003-09-02 University Of Georgia Research Foundation, Inc. Resonant microcavity display
US6392341B2 (en) 1993-07-20 2002-05-21 University Of Georgia Research Foundation, Inc. Resonant microcavity display with a light distribution element
US5469018A (en) * 1993-07-20 1995-11-21 University Of Georgia Research Foundation, Inc. Resonant microcavity display
US6358631B1 (en) 1994-12-13 2002-03-19 The Trustees Of Princeton University Mixed vapor deposited films for electroluminescent devices
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
US5707745A (en) * 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
US6548956B2 (en) 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
US5617445A (en) * 1995-06-07 1997-04-01 Picolight Incorporated Quantum cavity light emitting element
US5780174A (en) * 1995-10-27 1998-07-14 Kabushiki Kaisha Toyota Chuo Kenkyusho Micro-optical resonator type organic electroluminescent device
US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
GB2316228B (en) * 1996-04-10 2000-12-06 Cambridge Display Tech Ltd High contrast electroluminescent displays
US5773130A (en) * 1996-06-06 1998-06-30 Motorola, Inc. Multi-color organic electroluminescent device
US6160828A (en) * 1997-07-18 2000-12-12 The Trustees Of Princeton University Organic vertical-cavity surface-emitting laser
US5881089A (en) * 1997-05-13 1999-03-09 Lucent Technologies Inc. Article comprising an organic laser
US5932895A (en) * 1997-05-20 1999-08-03 The Trustees Of Princeton University Saturated full color stacked organic light emitting devices
EP1021935A1 (de) * 1997-07-11 2000-07-26 Fed Corporation Elektrodenstruktur für eine hochauflösende anzeigevorrichtung mit organischen elektrolumineszenten dioden und herstellungsverfahren
US6016033A (en) * 1997-07-11 2000-01-18 Fed Corporation Electrode structure for high resolution organic light-emitting diode displays and method for making the same
JPH1167448A (ja) * 1997-08-26 1999-03-09 Toyota Central Res & Dev Lab Inc ディスプレイ装置
US6392338B1 (en) 1998-04-23 2002-05-21 Matsushita Electrical Industrial Co., Ltd. Organic light emitter having optical waveguide for propagating light along the surface of the substrate
US6111270A (en) * 1998-04-27 2000-08-29 Motorola, Inc. Light-emitting apparatus and method of fabrication
US6326224B1 (en) * 1998-04-27 2001-12-04 Motorola, Inc. Method of purifying a primary color generated by an OED
US6133692A (en) * 1998-06-08 2000-10-17 Motorola, Inc. White light generating organic electroluminescent device and method of fabrication
GB9813326D0 (en) * 1998-06-19 1998-08-19 Cambridge Display Tech Ltd Backlit displays
GB9815271D0 (en) * 1998-07-14 1998-09-09 Cambridge Display Tech Ltd Particles and devices comprising particles
WO2000005702A1 (fr) 1998-07-24 2000-02-03 Seiko Epson Corporation Afficheur
DE69930646T2 (de) * 1998-09-02 2007-01-18 Seiko Epson Corp. Lichtquelle und anzeige-vorrichtung
US6384804B1 (en) 1998-11-25 2002-05-07 Lucent Techonologies Inc. Display comprising organic smart pixels
GB9901334D0 (en) * 1998-12-08 1999-03-10 Cambridge Display Tech Ltd Display devices
WO2000065879A1 (en) * 1999-04-28 2000-11-02 Emagin Corporation Organic electroluminescence device with high efficiency reflecting element
GB2349979A (en) * 1999-05-10 2000-11-15 Cambridge Display Tech Ltd Light-emitting devices
US6608716B1 (en) 1999-05-17 2003-08-19 New Mexico State University Technology Transfer Corporation Optical enhancement with nanoparticles and microcavities
US7123359B2 (en) * 1999-05-17 2006-10-17 Arrowhead Center, Inc. Optical devices and methods employing nanoparticles, microcavities, and semicontinuous metal films
US6366017B1 (en) 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
JP4548404B2 (ja) * 1999-11-22 2010-09-22 ソニー株式会社 表示装置
US6680570B2 (en) * 2001-03-21 2004-01-20 Agilent Technologies, Inc. Polymer organic light emitting device with improved color control
JP3508741B2 (ja) * 2001-06-05 2004-03-22 ソニー株式会社 表示素子
US6724140B2 (en) * 2001-09-21 2004-04-20 Fuji Photo Film Co., Ltd. Organic light-emitting device
KR100411184B1 (ko) * 2001-09-28 2003-12-18 학교법인 서강대학교 고 효율의 적색 유기발광 고분자 및 이를 이용한 전기발광소자
US7071613B2 (en) * 2001-10-10 2006-07-04 Lg.Philips Lcd Co., Ltd. Organic electroluminescent device
JP2003123987A (ja) * 2001-10-11 2003-04-25 Toyota Central Res & Dev Lab Inc 光共振器
GB0124595D0 (en) * 2001-10-12 2001-12-05 Savair & Aro Ltd Pressure sensor
US6888305B2 (en) * 2001-11-06 2005-05-03 Universal Display Corporation Encapsulation structure that acts as a multilayer mirror
JP2003151761A (ja) * 2001-11-14 2003-05-23 Osaka Industrial Promotion Organization 有機el素子を含む発光素子およびそれを用いた光インターコネクション装置
US20030103193A1 (en) * 2001-12-05 2003-06-05 O'donnell Eugene Murphy Use of resonant microcavity display FED for the illumination of a light valve projector
US6674776B2 (en) * 2002-02-04 2004-01-06 Eastman Kodak Company Organic vertical cavity lasing devices containing periodic gain regions
US20030184892A1 (en) * 2002-03-29 2003-10-02 Ritek Corporation Multi-layer mirror for a luminescent device and method for forming the same
CA2419121A1 (en) * 2002-05-03 2003-11-03 Luxell Technologies, Inc. Dark layer for an electroluminescent device
JP2003332560A (ja) * 2002-05-13 2003-11-21 Semiconductor Energy Lab Co Ltd 半導体装置及びマイクロプロセッサ
US6728278B2 (en) * 2002-05-23 2004-04-27 Eastman Kodak Company Organic vertical cavity laser array device
DE10228939A1 (de) * 2002-06-28 2004-01-15 Philips Intellectual Property & Standards Gmbh Elektrolumineszierende Vorrichtung mit transparenter Kathode
US6690697B1 (en) * 2002-08-20 2004-02-10 Eastman Kodak Company Vertical cavity light-producing device with improved power conversion
KR100875097B1 (ko) * 2002-09-18 2008-12-19 삼성모바일디스플레이주식회사 광학 공진 효과를 이용한 유기 전계발광 소자
TWI282650B (en) * 2002-10-11 2007-06-11 Eastman Kodak Co Organic vertical cavity lasing devices having organic active region
US20040179566A1 (en) * 2003-03-11 2004-09-16 Aharon El-Bahar Multi-color stacked semiconductor lasers
US6836495B2 (en) * 2003-05-07 2004-12-28 Eastman Kodak Company Vertical cavity laser including inorganic spacer layers
JPWO2005002010A1 (ja) * 2003-06-27 2006-08-10 株式会社半導体エネルギー研究所 有機レーザー装置
JP2005038586A (ja) * 2003-06-30 2005-02-10 Semiconductor Energy Lab Co Ltd 光ピックアップ装置
US6928095B2 (en) * 2003-07-18 2005-08-09 Eastman Kodak Company Organic vertical cavity laser array device with varying pixel sizes
US7268485B2 (en) * 2003-10-07 2007-09-11 Eastman Kodak Company White-emitting microcavity OLED device
EP1722606A4 (de) * 2004-03-05 2008-08-20 Idemitsu Kosan Co Organisches elektrolumineszenzelement und display
KR20070011302A (ko) * 2004-03-05 2007-01-24 이데미쓰 고산 가부시키가이샤 유기 전계 발광 소자 및 표시 장치
US7180238B2 (en) * 2004-04-08 2007-02-20 Eastman Kodak Company Oled microcavity subpixels and color filter elements
US20060140239A1 (en) * 2004-04-23 2006-06-29 Negro Luca D Silicon rich nitride CMOS-compatible light sources and Si-based laser structures
KR100651936B1 (ko) * 2004-06-04 2006-12-06 엘지전자 주식회사 탑 에미션 방식의 유기 el 소자 및 그 제조 방법
US7208863B2 (en) * 2004-07-09 2007-04-24 Eastman Kodak Company Light emitting devices with patterned angular color dependency
GB0418333D0 (en) * 2004-08-17 2004-09-22 Cambridge Display Tech Ltd Enhanced emission of light from organic light emitting diodes
US7489074B2 (en) * 2004-09-28 2009-02-10 Osram Opto Semiconductors Gmbh Reducing or eliminating color change for microcavity OLED devices
KR100683693B1 (ko) 2004-11-10 2007-02-15 삼성에스디아이 주식회사 발광 장치
KR100715500B1 (ko) * 2004-11-30 2007-05-07 (주)케이디티 미세공동 유기 발광 소자와 광 여기 발광층을 이용한 광원
WO2006073908A2 (en) * 2004-12-30 2006-07-13 E.I. Dupont De Nemours And Company Electronic device having a mirror stack
US20060214151A1 (en) * 2005-03-24 2006-09-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and laser apparatus using the light-emitting element
DE502005009415D1 (de) * 2005-05-27 2010-05-27 Novaled Ag Transparente organische Leuchtdiode
WO2007004106A1 (en) * 2005-06-30 2007-01-11 Koninklijke Philips Electronics N.V. Light-emitting device
US7846391B2 (en) 2006-05-22 2010-12-07 Lumencor, Inc. Bioanalytical instrumentation using a light source subsystem
JP2008210665A (ja) * 2007-02-27 2008-09-11 Canon Inc 有機発光素子及びそれを用いた表示装置
US8503849B2 (en) * 2007-03-27 2013-08-06 The Governors Of The University Of Alberta Channel assemblies
US7709811B2 (en) 2007-07-03 2010-05-04 Conner Arlie R Light emitting diode illumination system
US8098375B2 (en) 2007-08-06 2012-01-17 Lumencor, Inc. Light emitting diode illumination system
US7888858B2 (en) * 2007-08-21 2011-02-15 Global Oled Technology Llc Light emitting diode device incorporating a white light emitting layer in combination with a plurality of optical microcavities
KR101434362B1 (ko) * 2007-10-17 2014-08-26 삼성디스플레이 주식회사 유기 전계 발광소자 및 이를 이용한 컬러 디스플레이 장치
US8525200B2 (en) * 2008-08-18 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode with non-metallic reflector
US8198819B2 (en) 2008-09-17 2012-06-12 Switch Bulb Company, Inc. 3-way LED bulb
DE102008042701A1 (de) * 2008-10-09 2010-04-15 How To Organize Gmbh Linearmotor für optische Systeme
WO2010062643A1 (en) * 2008-10-28 2010-06-03 The Regents Of The University Of Michigan Stacked white oled having separate red, green and blue sub-elements
US8242462B2 (en) 2009-01-23 2012-08-14 Lumencor, Inc. Lighting design of high quality biomedical devices
KR101084197B1 (ko) * 2010-02-24 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 표시장치 및 그 제조방법
KR101097335B1 (ko) * 2010-02-25 2011-12-23 삼성모바일디스플레이주식회사 유기 발광 표시 장치의 제조 방법
US9728725B2 (en) * 2010-07-12 2017-08-08 Wake Forest University Light emmiting device comprising conjugated terpolymer/teroligomer capable of white light emittion
US8389957B2 (en) 2011-01-14 2013-03-05 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US8466436B2 (en) 2011-01-14 2013-06-18 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
DE102011107360A1 (de) * 2011-06-29 2013-01-03 Karlsruher Institut für Technologie Mikrooptisches Element, mikrooptisches Array und optisches Sensorensystem
US8967811B2 (en) 2012-01-20 2015-03-03 Lumencor, Inc. Solid state continuous white light source
TWI501439B (zh) * 2012-04-19 2015-09-21 Innocom Tech Shenzhen Co Ltd 影像顯示系統
US9217561B2 (en) 2012-06-15 2015-12-22 Lumencor, Inc. Solid state light source for photocuring
US9335267B2 (en) * 2012-07-09 2016-05-10 The United States Of America As Represented By The Secretary Of The Army Near-IR laser-induced vibrational overtone absorption systems and methods for material detection
US8901852B2 (en) 2013-05-02 2014-12-02 Switch Bulb Company, Inc. Three-level LED bulb microprocessor-based driver
US9666822B2 (en) 2013-12-17 2017-05-30 The Regents Of The University Of Michigan Extended OLED operational lifetime through phosphorescent dopant profile management
DE102014214721A1 (de) * 2014-07-25 2016-01-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur orts- und wellenlängenaufgelösten Erfassung von Lichtstrahlung, die von mindestens einer OLED oder LED emittiert wird
EP3016159B1 (de) 2014-10-27 2021-12-08 LG Display Co., Ltd. Vorrichtung zur emission von weissem organischem licht
KR102300621B1 (ko) * 2016-04-07 2021-09-13 한국전자통신연구원 이중모드 디스플레이
KR102631878B1 (ko) * 2016-06-28 2024-01-30 엘지디스플레이 주식회사 유기발광 표시장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0388608A1 (de) * 1989-03-24 1990-09-26 Matsushita Electric Industrial Co., Ltd. Dünnfilm-Elektrolumineszenzvorrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306385A (en) * 1992-09-15 1994-04-26 Texas Instruments Incorporated Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate
US5369657A (en) * 1992-09-15 1994-11-29 Texas Instruments Incorporated Silicon-based microlaser by doped thin films
US5363398A (en) * 1993-09-30 1994-11-08 At&T Bell Laboratories Absorption resonant rare earth-doped micro-cavities
US5405710A (en) * 1993-11-22 1995-04-11 At&T Corp. Article comprising microcavity light sources

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0388608A1 (de) * 1989-03-24 1990-09-26 Matsushita Electric Industrial Co., Ltd. Dünnfilm-Elektrolumineszenzvorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DODABALAPUR ET AL.: "Microcavity effects in organic semiconductors", APPLIED PHYSICS LETTERS, vol. 64, no. 19, 9 May 1994 (1994-05-09), pages 2486 - 2488, XP000449534, DOI: doi:10.1063/1.111606 *

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0814642A1 (de) * 1996-06-22 1997-12-29 Ultra Silicon Technology (UK) Limited Wirkungsverbesserung der elektrolumineszierende Anodnungen
US5949187A (en) * 1997-07-29 1999-09-07 Motorola, Inc. Organic electroluminescent device with plural microcavities
US6362566B2 (en) 1998-09-11 2002-03-26 Motorola, Inc. Organic electroluminescent apparatus
WO2000076010A1 (en) * 1999-06-02 2000-12-14 Seiko Epson Corporation Multiple wavelength light emitting device, electronic apparatus, and interference mirror
USRE45442E1 (en) 1999-06-02 2015-03-31 Seiko Epson Corporation Multiple wavelength light emitting device, electronic apparatus, and interference mirror
USRE44164E1 (en) 1999-06-02 2013-04-23 Seiko Epson Corporation Multiple wavelength light emitting device, electronic apparatus, and interference mirror
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US6791261B1 (en) 1999-06-02 2004-09-14 Seiko Epson Corporation Multiple wavelength light emitting device, electronic apparatus, and interference mirror
WO2001015246A3 (en) * 1999-08-20 2001-09-20 Seiko Epson Corp Multiple-wavelength light emitting device
US6639250B1 (en) 1999-08-20 2003-10-28 Seiko Epson Corporation Multiple-wavelength light emitting device and electronic apparatus
US7710025B2 (en) 1999-11-22 2010-05-04 Sony Corporation Display device using an organic electroluminescence device having resonant cavity
EP1154676A1 (de) * 1999-11-22 2001-11-14 Sony Corporation Anzeigevorrichtung
EP1154676A4 (de) * 1999-11-22 2008-08-20 Sony Corp Anzeigevorrichtung
EP1124274A1 (de) * 2000-02-09 2001-08-16 Motorola, Inc. Organisches elektrolumineszentes Gerät
GB2369428B (en) * 2000-11-22 2004-11-10 Imperial College Detection system
GB2369428A (en) * 2000-11-22 2002-05-29 Imperial College Micro total chemical analysis system with integrated fluid sample channels and organic semiconductor light emitters and detectors
US7769253B2 (en) 2002-09-02 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit device
US7385655B2 (en) 2002-09-02 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit device with optical sensors and optical shutters at specific locations
US7459726B2 (en) 2003-02-12 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a light emitting element and a light receiving element
US7505487B2 (en) 2003-04-23 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Laser oscillator including phosphorescent material
US8283679B2 (en) 2003-06-30 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having light-emitting element and light-receiving element for transmitting among circuits formed over the plurality of substrates
EP1494326A1 (de) * 2003-06-30 2005-01-05 Eastman Kodak Company Herstellungsverfahren eines organischen Vielfachlasers mit vertikalem Resonator und dielektrischem Stapel mit geätzter Zone
US7812520B2 (en) 2003-07-01 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Full color display based on organic light-emitting device
US7129634B2 (en) 2004-04-07 2006-10-31 Eastman Kodak Company Color OLED with added color gamut pixels
WO2005101541A1 (en) * 2004-04-07 2005-10-27 Eastman Kodak Company Color oled with added color gamut pixels
US8471456B2 (en) 2004-10-12 2013-06-25 Koninklijke Philips Electronics N.V. Electroluminescent light source with improved color rendering
WO2021108298A1 (en) 2019-11-26 2021-06-03 OLEDWorks LLC Multimodal microcavity oled with multiple blue-emitting layers

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US5478658A (en) 1995-12-26
DE69510863T2 (de) 2000-01-13

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