EP0608890A1 - Vorrichtung zur Korrektur vor Bearbeitungsfehlern - Google Patents

Vorrichtung zur Korrektur vor Bearbeitungsfehlern Download PDF

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Publication number
EP0608890A1
EP0608890A1 EP94101243A EP94101243A EP0608890A1 EP 0608890 A1 EP0608890 A1 EP 0608890A1 EP 94101243 A EP94101243 A EP 94101243A EP 94101243 A EP94101243 A EP 94101243A EP 0608890 A1 EP0608890 A1 EP 0608890A1
Authority
EP
European Patent Office
Prior art keywords
machining
semiconductor ingot
diameter
grinding
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP94101243A
Other languages
English (en)
French (fr)
Other versions
EP0608890B1 (de
Inventor
Yoshisiro C/O Isobe Plant Shin-Etsu Hirano
Atsushi C/O Isobe Plant Shin-Etsu Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP0608890A1 publication Critical patent/EP0608890A1/de
Application granted granted Critical
Publication of EP0608890B1 publication Critical patent/EP0608890B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
    • G05B19/401—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by control arrangements for measuring, e.g. calibration and initialisation, measuring workpiece for machining purposes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G05B19/4189—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by the transport system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Definitions

  • the present invention relates to a machining error correction apparatus that automatically corrects machining errors in a plurality of grinding devices each of which cylindrically grinds the circumferential surface of the semiconductor ingot and which also grinds part of the circumferential surface along the direction of the axis to form an orientation flat or notch and that automatically corrects machining errors in a plurality of cutting devices each of which cuts the semiconductor ingot at a right angle to its axis.
  • a semiconductor ingot that has been formed as a single crystal is cut into blocks of a set length by cutting devices and is then cylindrically ground by grinding devices until its outer circumferential surface attains a set diameter.
  • the grinding device also grinds a part of the outer circumferential surface in the direction of the axis to form an orientation flat of a set width or a notch of a set depth.
  • one block is taken periodically to measure the machining error in length and then the operator performs correction for that particular cutting device.
  • one block is periodically taken to measure the machining error in diameter and in width of orientation flat or in depth of notch and the operator performs correction on the relevant grinding device.
  • an object of the present invention is to provide a machining error correction apparatus that can correct machining errors of grinding devices and cutting devices automatically, accurately and efficiently by addressing the aforementioned problems.
  • a machining error correction apparatus for automatically correcting machining errors in a plurality of grinding devices each of which cylindrically grinds a circumferential surface of a semiconductor ingot by employing a diameter correction value so that a diameter of the ingot will attain a set value of Dsp, and which also grinds a part of said circumferential surface along a direction of an axis by employing a width/depth correction value so that an orientation flat with its width at a set value of Wsp, or a notch with its depth at a set value of Wsp can be formed on each the semiconductor ingot, and, for automatically correcting machining errors in a plurality of cutting devices each of which cuts the semiconductor ingot at a right angle to its axis by employing a length correction value so that a block of the semiconductor ingot with its length at a set value of Lsp is formed, comprising: a device for measuring a diameter of the block, a width of the orientation flat or a depth of
  • machining errors in a plurality of grinding devices and cutting devices can be automatically and accurately corrected. Also, since the time required to measure the diameter, the width of the orientation flat or the depth of the notch and the length of one block 10p is generally shorter than the grinding and cutting time required to obtain one block 10p, it is possible to correct machining errors for a plurality of grinding devices and cutting devices with one measuring device, resulting in improved efficiency.
  • Figs. 6(A) to 6(D) are performed with one grinding device for one semiconductor ingot and then the processing steps as indicated in Figs. 7(A) to 7(E) are performed in the given order with one cutting machine.
  • This processing steps are executed in a fully automated system as illustrated in Fig. 3.
  • This system is equipped with N grinding devices; 51 - 5N, M cutting devices; 61 - 6M, L dimensional inspection devices; 71 - 7L and an automatic warehouse 80, a transport device 81 for delivering formed semiconductor ingots 10 to the automatic warehouse 80, and the transport device 82 for transporting the semiconductor ingots between the grinding devices 51 - 5N, the cutting devices 61 - 6M, the dimensional inspection devices 71 - 7L and the automatic warehouse 80.
  • the operational details of each device are controlled by a local controller, not shown in the figures, provided in each device.
  • the control and data management for the entire system are performed by the system control & data management device 83.
  • Figs. 7(A) to (E) correspond with steps 101 to 105 in Fig. 5 respectively.
  • the dimensional inspection device 71 is provided with a diameter measuring device 71a that measures the diameter Dp of the block 10p, a width/depth measuring device 71b that measures the width Wp of the orientation flat OF or the depth Wp of the notch of the block 10p, a length measuring device 71c that measures the length Lp of the block 10p and the local controller 71d.
  • the local controller 71d sends measuring instructions to the diameter measuring device 71a, the width/depth measuring device 71b and the length measuring device 71c, and receives the measured values Dp, Wp and Lp from the diameter measuring device 71a, the width/depth measuring device 71b and the length measuring device 71c respectively.
  • the diameter measuring device 71a, width/depth measuring device 71b and the length measuring device 71c detect the diameter Dp, the orientation flat width or the notch depth Wp and the length Lp respectively by, for example, photographing the block 10p with a CCD camera and then by processing the image.
  • the machining error correction value calculation & transmission section 83a is expressed as a partial functional block of the structure of the system control & data management device 83 in Fig. 3 and is constituted by a microcomputer.
  • Fig. 2 shows the processing performed by the machining error correction value calculation & transmission section 83a.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Automatic Control Of Machine Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP94101243A 1993-01-28 1994-01-28 Vorrichtung zur Korrektur vor Bearbeitungsfehlern Expired - Lifetime EP0608890B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5012878A JP2789983B2 (ja) 1993-01-28 1993-01-28 加工誤差補正装置
JP12878/93 1993-01-28

Publications (2)

Publication Number Publication Date
EP0608890A1 true EP0608890A1 (de) 1994-08-03
EP0608890B1 EP0608890B1 (de) 1997-09-10

Family

ID=11817681

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94101243A Expired - Lifetime EP0608890B1 (de) 1993-01-28 1994-01-28 Vorrichtung zur Korrektur vor Bearbeitungsfehlern

Country Status (4)

Country Link
US (1) US5405285A (de)
EP (1) EP0608890B1 (de)
JP (1) JP2789983B2 (de)
DE (1) DE69405417T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4446163B4 (de) * 1994-12-23 2006-01-19 Heidelberger Druckmaschinen Ag Verfahren zur Gewinnung von Antriebsriemen mit geringem Drehwinkelfehler und Vorrichtung zur Minimierung des Drehwinkelfehlers eines Antriebsriemens
US6113461A (en) * 1996-09-30 2000-09-05 Ntn Corporation Grinding method utilizing grinding sharpness of grinding element
JP3213563B2 (ja) * 1997-03-11 2001-10-02 株式会社スーパーシリコン研究所 ノッチレスウェーハの製造方法
JP3649393B2 (ja) * 2000-09-28 2005-05-18 シャープ株式会社 シリコンウエハの加工方法、シリコンウエハおよびシリコンブロック
US7637801B2 (en) * 2000-09-28 2009-12-29 Sharp Kabushiki Kaisha Method of making solar cell
WO2009078485A1 (ja) * 2007-12-19 2009-06-25 Asahi Glass Company, Limited エーテル組成物
US9943402B2 (en) 2008-11-20 2018-04-17 Insight Innovations, Llc Micropatterned intraocular implant
AU2009318158B2 (en) * 2008-11-20 2016-01-14 Insight Innovations, Llc Biocompatible biodegradable intraocular implant system
US20120232649A1 (en) 2008-11-20 2012-09-13 Insight Innovations, Llc Intraocular Lens Cell Migration Inhibition System
US8551167B2 (en) * 2008-11-20 2013-10-08 Insight Innovations, Llc Intraocular implant cell migration inhibition system
US8259901B1 (en) 2010-05-25 2012-09-04 Rubicon Technology, Inc. Intelligent machines and process for production of monocrystalline products with goniometer continual feedback
US20140156051A1 (en) * 2012-12-05 2014-06-05 Laboratoires Bodycad Inc. Quality control of an object during machining thereof
TW201511112A (zh) * 2013-07-16 2015-03-16 Sony Corp 基板之製造方法及電子器件之製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331452A (en) * 1980-08-04 1982-05-25 Fairchild Camera And Instrument Corporation Apparatus for crystal shaping
EP0280245A2 (de) * 1987-02-24 1988-08-31 Tokyo Seimitsu Co.,Ltd. Verfahren und Vorrichtung für das Schneiden eines zylindrischen Materials
EP0359591A2 (de) * 1988-09-16 1990-03-21 Shin-Etsu Handotai Company Limited Vorrichtung zur Formung von Stangen in gerader kreisförmiger Zylinderform
EP0368648A2 (de) * 1988-11-10 1990-05-16 Shin-Etsu Handotai Company Limited Aussenzylindrische Schleifeinheit
EP0450579A2 (de) * 1990-03-31 1991-10-09 Shin-Etsu Handotai Company Limited Gerät zum Positionieren und Richten/Schleifen/Handhaben von Einkristall-Barren
EP0496303A1 (de) * 1991-01-24 1992-07-29 Shin-Etsu Handotai Company Limited Schleifmaschine zum Rundschleifen einer roh gewachsenen Kristallstange

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4084354A (en) * 1977-06-03 1978-04-18 International Business Machines Corporation Process for slicing boules of single crystal material
US4773951A (en) * 1986-01-07 1988-09-27 Atlantic Richfield Company Method of manufacturing wafers of semiconductor material
DE3613132A1 (de) * 1986-04-18 1987-10-22 Mueller Georg Nuernberg Verfahren zum zerteilen von harten, nichtmetallischen werkstoffen
JPH0767692B2 (ja) * 1989-09-07 1995-07-26 株式会社東京精密 スライシングマシンの切断方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331452A (en) * 1980-08-04 1982-05-25 Fairchild Camera And Instrument Corporation Apparatus for crystal shaping
EP0280245A2 (de) * 1987-02-24 1988-08-31 Tokyo Seimitsu Co.,Ltd. Verfahren und Vorrichtung für das Schneiden eines zylindrischen Materials
EP0359591A2 (de) * 1988-09-16 1990-03-21 Shin-Etsu Handotai Company Limited Vorrichtung zur Formung von Stangen in gerader kreisförmiger Zylinderform
EP0368648A2 (de) * 1988-11-10 1990-05-16 Shin-Etsu Handotai Company Limited Aussenzylindrische Schleifeinheit
EP0450579A2 (de) * 1990-03-31 1991-10-09 Shin-Etsu Handotai Company Limited Gerät zum Positionieren und Richten/Schleifen/Handhaben von Einkristall-Barren
EP0496303A1 (de) * 1991-01-24 1992-07-29 Shin-Etsu Handotai Company Limited Schleifmaschine zum Rundschleifen einer roh gewachsenen Kristallstange

Also Published As

Publication number Publication date
JPH06226588A (ja) 1994-08-16
DE69405417T2 (de) 1999-04-29
EP0608890B1 (de) 1997-09-10
DE69405417D1 (de) 1997-10-16
JP2789983B2 (ja) 1998-08-27
US5405285A (en) 1995-04-11

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