Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
  • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
  • H01L31/043—Mechanically stacked PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the invention relates, in general, to the conversion of light energy, in particular solar energy, into electrical energy by the photovoltaic effect produced in semiconductors.
• solar cells most often use only one species of semiconductor material, generally silicon or gallium arsenide GaAs.
• FIG. 1 shows the spectral characteristic of solar light (considered excluding atmospheric absorption), with the irradiance in function of the wavelength or (which is equivalent) of the energy of the photons.
• the width of the forbidden band is 1.43 eV, corresponding to a wavelength ⁇ 0 of 867 nm. Photons with an energy of less than 1.43 eV (i.e. with a wavelength greater than
• dichroic the incident solar spectrum is split by means of an optical system separating dichroic mirrors into several portions corresponding to sub-bands of the spectrum. Each of these portions is sent to a different type of solar cell, optimized for a given photon energy.
• This configuration is effective, but involves implementing a complex, bulky, fragile and expensive optical system.
• a second configuration called “monolithic” consists in providing a stack of solar cells constituted by successive layers epitaxially grown on the same substrate, the different cells being electrically coupled together, in series, by tunnel junctions.
• the first cell captures the most energetic photons of the incident flux, lets through the others which are absorbed by the cell of the lower level, and so on.
• This second configuration due to its monolithic character, is extremely compact and robust, but nevertheless has several drawbacks.
• a first drawback stems from the fact that it is not possible to associate silicon cells, the advantages and ease of production of which are well known, with GaAs cells, because we do not know so far make a tunnel junction between silicon and gallium arsenide.
• a second drawback stems from the fact that, although we know how to realize tunnel junctions between III-V semiconductors by epitaxy as soon as these materials have compatible crystal lattice parameters (that is to say identical or very neighbors), in practice, only two series of materials can be chosen, one having the GaAs mesh parameter, the other that of InP.
• the materials that can be epitaxied on GaAs such as AlGaAs, have forbidden bandwidths greater than those of GaAs, so that the losses "by transparency", of approximately 40% of the total energy, will not be not reduced compared to a GaAs cell alone.
• the materials that can be epitaxied on InP are limited to small bandwidths, and thus introduce significant losses by excess energy.
• a third drawback of the monolithic configuration is linked to the fact that the different cells are coupled in series and therefore produce, together, a photocurrent necessarily limited by the weakest photocurrent generated by one of the cells. Even if the photocurrents of the different cells are adjusted to be close to each other, they vary significantly and very differently depending on atmospheric conditions, the direction of incidence of the radiation, etc.
• a third proposed configuration of a multispecular cell, called a "stacked" cell two (or more) different cells are produced beforehand, each on its own substrate, which are then superposed by fixing them with a transparent adhesive.
• This adhesive can either be conductive, which makes it possible to connect the two cells in series (but in this case, the photocurrent produced by the device is, as in the case of the monolithic configuration, limited by the weakest photocurrent generated), or insulating, each cell being then provided with its own electrodes connected separately to circuits separate from the electronics of the load block (which must have been designed accordingly).
• This configuration also has a certain number of disadvantages, in particular the fact that, since two cells have to be produced separately, the final component will comprise two thicknesses of substrate, adding to the weight and the cost of the structure, especially in a structure where a GaAs cell (or, even more so InP) is stacked on a sificium cell: the GaAs substrate, which is the heaviest and most expensive, does not serve as a support mechanical and plays no active role.
• the object of the invention is to remedy the respective drawbacks of these different known configurations, by proposing a new configuration, intermediate between the known monolithic and stacked configurations, which combines the respective advantages of these structures without presenting any the inconvenients.
• the invention proposes, in a first form of implementation, of producing solar cells having an overlapping of semiconductor layers of different mesh parameters thanks to a new method of producing tunnel junction, thus making it possible to widen the energy spectrum of the photons absorbed and significantly improve the conversion efficiency while retaining the advantages of compactness and simplicity of the monolithic configuration.
• the invention proposes, in a second form of implementation, to simplify the manufacture of a stacked cell by dispensing with bonding, and also to reduce the cost and the weight by elimination and recovery of that of the substrates which plays no active role or mechanical support, in particular in the case of a GaAs or InP substrate.
• the multispectral cell of the invention which comprises a stack of at least two associated elementary cells exhibiting different spectral response characteristics, is characterized in that at least one of the elementary cells is Mechanically deformable, its flexibility being chosen sufficiently high to allow it to adhere directly to the other cell by simple interaction of van der Waals between the two surfaces facing the elementary cells.
• the thickness of the interface separating the two facing surfaces is thin enough to form a tunnel junction electrically coupling the two elementary cells together, and the facing layers of the elementary cells are then layers of degenerate sem ⁇ conductive material p + and n + respectively .
• the thickness of this interface is, on the other hand, high enough to prevent any coupling between the two elementary cells, and these cells are then each provided with pairs of clean electrodes. health at respective, separate terminals of the component.
• At least one of the elementary cells comprises a layer of amorphous silicon deposited on a plastic film flexible.
• at least one of the elementary cells may also comprise a thin layer of semiconductor material detached from the substrate on which it has been formed.
• FIG. 1, cited above, shows the spectral characteristic of the solar light, excluding atmospheric absorption.
• Figures 2a and 2b show, respectively at rest and under direct polarization, the band diagrams (valence band and conduction band) of a conventional tunnel homojunction.
• Figures 3a and 3b are homologous to Figures 2a and 2b, for a conventional tunnel heterojunction between two epitaxial layers.
• Figures 4a and 4b are homologous to Figures 2a and 2b, for a tunnel heterojunction between two layers simply joined together without any particular precautions.
• FIGS. 5a and 5b schematically show the configuration according to the invention associating two cells of different types, shown as separate in FIG. 5a and joined in FIG. 5b.
• FIGS. 6a and 6b show in more detail the structure of the upper cell, made of amorphous silicon, of the configuration according to the invention of FIG. 5, respectively for two different contact-making modes.
• Figures 7a and 7b show two variants of the lower cell, on HI-V semiconductor, of the stack of Figure 5.
• Figures 8a to 8c show successive stages of a variant embodiment using separation by chemical dissolution of the substrate and recovery thereof.
• Figures 9a and 9b illustrate an alternative implementation of the method illustrated in Figures 8a to 8c. 0
• FIGS. 2a and 2b there is shown, respectively at rest and under direct polarization, the band diagram of a conventional tunnel junction, consisting of a homojunction p + / n + between two degenerate semiconductors (c '' i.e., the very strong doping, places the Fermi level E F above the conduction band E c in the semiconductor n + , and below the valence band E v in the semiconductor p +.
• the tunnel effect causes polarization in Direc- you, electron transfer (shown in Figure 2b) of the semiconductor degenerate n + to the free states of the valence band of semicon ⁇ ductor degenerate p +.
• tunnel current is an exponential function of the width W of the space charge zone, the current decreasing very quickly when this width increases.
• the tunnel junction can also be obtained with hetero-junctions, that is to say junctions between materials p + and n + having different bandwidths.
• Figures 3a and 3b, homologous to Figures 2a and 2b, correspond to the latter case for an ideal p + / n + heterojunction, that is to say where the two materials p + and n + have the same parameter of crystal mesh and are in perfect epitaxy with each other.
• a junction p + / n + is never perfectly abrupt because of the interdiffusion of the dopants p and n which reduces the doping of the materials in the vicinity of the interface; this interdiffusion covers an area up to a few tenths of nanometers to a few nanometers, thus further increasing the thickness e of the load region of space and thus reducing the effect tunnel.
• the parent idea of the invention consists, instead of epitaxializing two materials p + / n + having different lattice parameters, of simply attaching these materials to each other. This idea, however, comes up against the practical difficulty due to the fact that the surfaces of semiconductors are generally slightly oxidized or contain adsorbed species. If this oxide or adsorbent layer is very thin, on the order of a few tenths of a nanometer to a few nanometers at most, the electrons will be able to pass through it by tunnel effect.
• this tunnel heterojunction has a higher electrical resistance than a conventional tunnel junction between two epitaxial materials, since at the thickness W of the area of clean space said is added the thickness d separating the active surfaces p + and n + opposite.
• Figures 4a and 4b homologous to Figures 3a and 3b, show the band diagram of a heterojunction operating by tunnel effect according to this principle.
• the implementation of the invention therefore requires, in this case, to solve the problem consisting in making a joining of the two semiconductor materials by ensuring that the distance which separates them does not exceed a few tenths of nanometers at a few nanometers.
• the invention proposes to choose for one of the semiconductor materials a mechanically deformable material, whose great flexibility will allow it to match the shape and surface roughness of the other semiconductor and thus ensure very close intimate of the two surfaces.
• the two surfaces then adhere one to the other simply by van type Waals interaction due to their nature very smooth, without any gluing or other means of mechanical or chemical fixings tion.
• Electrodes will then be provided on either side of each of the cells, these electrodes leading to separate terminals of the cell, in a manner comparable to the known stacked configurations - but with the notable difference that no transparent adhesive will be necessary to ensure the adhesion of the two cells, this being carried out purely and simply by interaction of van der Waals.
• the implementation of the invention requires solving another problem, namely obtaining a cell that is mechanically deformable enough to be adhered to the other cell by van de Waals interaction.
• the present invention provides several non-limiting methods of implementation.
• a first method consists in using amorphous silicon cells previously deposited on a flexible plastic film, such as for example the cells described by A. Takeoka, Technology Brightens Prospects for Solar Power, Journal of Electronic Engineering, July 1991, p .100.
• Figures 5a and 5b schematically show, respectively before and after adhesion, a multispectral cell produced according to these teachings of the invention, associating an amorphous silicon cell (comprising an active layer 3 deposited on a flexible film
• gallium arsenide cell comprising an active layer 5 deposited on a substrate 6.
• the amorphous silicon cell 1, of known structure as such, is shown in more detail in Figures 6a and 6b.
• the active layer generally designated by the reference 3, is deposited on the flexible plastic film 4, and successively comprises a layer 7 of amorphous silicon n, a layer 8 of amorphous silicon p, as well as a layer 9 of amorphous silicon p + if one wishes to achieve a coupling of the cells by tunnel junction.
• the contact on the layer n 7 is ensured by an electrode 10 deposited at the bottom a well 11 etched into the thickness of the active layer (FIG. 6a) or by an electrode 12 deposited on the surface of a well 13 (FIG. 6b).
• FIG. 6a the active layer
• FIG. 7a describes a GaAs solar cell comprising, on a substrate 6, an active layer 5 with successively a layer 14 of GaAs p, a layer 15 of GaAs n, as well as a layer 16 of GaAs n + if l 'We wish to couple the two cells by tunnel effect (this last layer is intended to constitute the tunnel junction in association with the p + 9 doped layer of cell 1; we could also, conversely, have a n + doped layer 9 and a layer 16 p + doped).
• FIG. 7a describes a GaAs solar cell comprising, on a substrate 6, an active layer 5 with successively a layer 14 of GaAs p, a layer 15 of GaAs n, as well as a layer 16 of GaAs n + if l 'We wish to couple the two cells by tunnel effect (this last layer is intended to constitute the tunnel junction in association with the p + 9 doped layer of cell 1; we could also, conversely, have a n
• the active layer 5 itself comprises a heterojunction with, on the substrate 6, a layer 17 of AlGaAs p, a layer 18 of AlGaAs n, the layer 14 of GaAs p, the layer 15 of GaAs n and the n + layer of GaAs 16, an additional tunnel junction thus being formed at 19 between the GaAs and AlGaAs layers.
• a multispector cell with three elementary cells is thus obtained, thereby further improving the conversion efficiency.
• the choice of cell 2 is not limited to these two examples, and it could be made from other materials, as soon as the bandwidth of the material is prohibited, greater than that of silicon. , is compatible with multispectral operation.
• the two cells 1 and 2 are not necessarily coupled by tunnel junction at their interface (at 20 in FIG. 5), but can be simply adhered to each other without direct electrical coupling, separate contact-making electrodes then coming take the photocurrents to supply electronic circuits different from the charging block. It is therefore sufficient to provide on the surface of cell 1 and / or of cell 2 a sufficiently thick oxide layer (greater than a few tens of nanometers) to prevent the appearance of any tunneling effect at the interface 20; in addition, the layers 9 and 16 of degenerate semiconductor are no longer necessary in the latter case.
• An alternative implementation, applicable to one or other of the above cases (with or without coupling by tunnel junction) consists in eliminating the substrate of cell 2, as illustrated in FIGS. 8a to 8c. Indeed, not only does this substrate play no mechanical role - since the film 4 is sufficient to support the entire cell -, but it is also both heavy and expensive (GaAs and, a fortiori, InP); it is therefore particularly advantageous to remove and recover it.
• the two cells are then joined as in the previous case (FIG. 8a).
• These dissolution techniques are for example exposed by M. Konagai et al., High Efficiency GaAs Thin Film Solar Cells by Peeled Film Technology, Journal of Crystal Growth, n ° 45 (1978), p. 277, or in French patent applications 91-15139 and 91-15141 in the name of the
• Electrodes 22 can then be deposited on the surface, which provide contact directly on the back of the active layer 5; the final structure obtained is illustrated in FIG. 8c.
• FIGS. 9a and 9b Another variant, illustrated in FIGS. 9a and 9b, consists, instead of detach the substrate from cell 2, detach that from cell 1 (substrate 23 in Figure 9a, removed in Figure 9b). The separation of the substrate may in particular be carried out according to one of the techniques described in the aforementioned French patent applications 91-15139 and 91-15141. It is then the substrate 6 of the cell 2 which then performs the role of mechanical support for the final cell.

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• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Electromagnetism (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Photovoltaic Devices (AREA)

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• 1992
  • 1992-04-15 FR FR9204634A patent/FR2690279B1/fr not_active Expired - Fee Related
• 1993
  • 1993-04-15 US US08/162,173 patent/US5479043A/en not_active Expired - Fee Related
  • 1993-04-15 EP EP93909023A patent/EP0591499A1/de not_active Withdrawn
  • 1993-04-15 JP JP5518058A patent/JPH06511356A/ja active Pending
  • 1993-04-15 WO PCT/FR1993/000374 patent/WO1993021661A1/fr not_active Application Discontinuation

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