Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
  • H01C7/006—Thin film resistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
  • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
  • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
  • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Definitions

• the invention relates to a Me-C: H layer as a high-resistance electrical resistance layer as well as a discrete electrical resistance and use the electrical resistance layer.
• DE-OS 25 09 623 describes a method for producing electrical resistance layers made of Ta-C X with 0.35>X> 0.8 by sputtering.
• Resistance layers are also described in EP 0 247 413 A1 by atomizing zircon / palladium, titanium / gold, zircon / gold, hafnium / gold or titanium / palladium can be produced in a reactive gas atmosphere. It should according to the teaching of this document, layers in the form of nitrides (claim 3) or carbides or carbonitrides can be produced (description column 3, lines 16-19).
• the layers produced according to this document therefore consist of metallic conductive inclusions (gold, palladium or platinum) in a metallic conductive Matrix (carbide or nitride).
• metallic conductive inclusions gold, palladium or platinum
• metallic conductive Matrix carbbide or nitride
• Such metal composite layers are accordingly also not suitable as layers with a high specific resistance. The The temperature dependence of the resistance is not specified.
• TK temperature coefficient of resistance
• Thin Solid Films 201 (1991) 109 discloses a method for producing Cr-Si-C films for thin-film resistors by means of a DC magnetron sputtering method in an Ar-CH 4 atmosphere, in which hydrogen is incorporated into the film and films, for example the composition Si 0.30 Cr 0.12 C 0.28 H 0.30 arise. These films have a negative temperature coefficient which is larger than that of Cr-Si-O layers.
• the resistance value of a discrete electrical resistance can be a microstructuring process (coils in cylindrical, meandering in flat Resistance bodies) can be increased.
• the one to be achieved in this process The final value / basic value ratio is due to the limited total area of the resistor set an upper limit because the conductor track does not become arbitrarily narrow may.
• the trend in the development of discrete electrical resistances continues Towards miniaturization.
• the area of the smallest designs is currently just around 1 x 2 mm2.
• the demand for high impedance is therefore only through an increase in the specific resistance of the layer material used to fulfill.
• Another object of the invention is to provide a corresponding one electrical resistance that can be used as a discrete component can specify.
• an electrical resistance layer It is proposed that a highly cross-linked carbon-hydrogen matrix with 40 to 95 atom% carbon, 1 to 30 atom% Hydrogen and 4 to 60 atomic% of one or more metals selected from the 1st and / or 8th subgroup of the Periodic Table of the Elements (according to the new IUPAC nomenclature from the 8th and / or 9th and / or 10th and / or 11th group of the Periodic table of the elements), the metal or metals in the form of crystalline There are particles with a particle size in the nanometer range.
• Me-C H layers unite specific resistance of greater than 1,000 ⁇ cm and a TK between -50 and +50 ppm / K, with no carbide formation between metal and carbon has taken place.
• a preferred embodiment provides that as metals Metals from the copper group and / or platinum group can be selected. As Ag, Pt, Au and / or Cu has proven particularly suitable here.
• Another advantageous variant provides that part of the carbon through Silicon and / or boron and / or nitrogen is replaced. It has proven to be cheap between 1 and 95%, advantageously between 1 and 40%, of the carbon content to be substituted by silicon and / or boron and / or nitrogen.
• the layers according to the invention consist of a highly crosslinked hydrocarbon matrix with preferably embedded nanocrystalline, metallically conductive Particles. They behave at high electrical properties Metal contents metallic (positive TC), with a sufficiently low metal content like Semiconductors (negative TC).
• TC Metal contents metallic
• negative TC Semiconductors
• the one to a layer with a TC Specific resistance estimated by interpolation is 0 ppm / K for the layer systems Ti-C: H, Ta-C: H and Nb-C: H approx. 200 - 300 ⁇ cm for the Layer systems Pt-C: H, Au-C: H and Cu-C: H around 10,000 ⁇ cm.
• Me-C H layers are produced using the methods of the prior art Technology, i.e. with CVD or with PVD. Through a subsequent annealing process, preferably in air, the layer properties are subsequently stabilized (Pre-aging).
• the changes in the layer structure increase particle size, healing of lattice defects, increase in matrix crosslinking
• changes in chemical composition incorporation of oxygen, expulsion of hydrogen and carbon
• can suitable tempering conditions temperature, time, surrounding medium
• one TC close to 0 ppm / K can be achieved.
• a passivation layer e.g. an approx. 100 nm thick amorphous, silicon-containing hydrocarbon layer (a-CSi: H).
• a-CSi amorphous, silicon-containing hydrocarbon layer
• the new thin-layer material according to the invention accordingly makes higher specific resistances than with CrSi (approx. 1,000 ⁇ cm) with the same TC. Due to the special microstructure of the material (dense amorphous network) there is also significantly improved long-term stability.
• the invention further relates to an electrical resistance as a discrete component with the features of claim 5.
• the electrical resistance layer described is then applied to a substrate in a layer thickness of 10 nanometers to 10 ⁇ m, preferably 50 nanometers to 5 ⁇ m, using the known method .
• AIN, BN, Al 2 O 3 , SiC or silicate is used as the substrate.
• the invention also relates to the use of the electrical resistance layer for producing electrical resistances as discrete and / or integrated components.
• the invention is explained in more detail using three exemplary embodiments.
• Pt-C H layers were produced by reactive HF sputtering.
• the Traget-substrate distance was 5.5 cm, the total pressure was 0.020 mbar.
• the proportion of ethyne in the gas phase was 2% (rest: argon), the target bias voltage 1.5 kV. That was how Ceramic substrates in 30 min. Obtain layers 0.5 ⁇ m thick.
• the elementary analysis showed an atomic platinum fraction (Pt / (Pt + C)) of 0.09, the hydrogen content is lower overall than 30 at%.
• the electrical characterization of the layer after an annealing process (1h, air, 300 ° C) gave a specific resistance of 19,000 ⁇ cm and a TK of 40 ppm / K at room temperature.
• Pt-CSi H layers are produced by reactive HF sputtering with tetramethylsilane (TMS) been.
• TMS tetramethylsilane
• the target-substrate distance was 5.5 cm, the target bias voltage 2.0 kV.
• the TMS partial pressure was 0.001 mbar (rest: argon).
• the Elemental analysis showed an atomic platinum fraction (Pt / Pt + Si + C) of 0.33, one atomic silicon content (Si / (Pt + Si + C)) of 0.12 and an atomic carbon content (C / (Pt + Si + C)) of 0.55.
• the total hydrogen content is less than 30 at%.
• the electrical characterization of the layer after an annealing process (8h, air, 300 ° C) resulted a specific resistance of 63,000 ⁇ cm and a TK of -46 ppm / K Room temperature.

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Non-Adjustable Resistors (AREA)
• Apparatuses And Processes For Manufacturing Resistors (AREA)
• Electrodes Of Semiconductors (AREA)
• Physical Vapour Deposition (AREA)

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• 1993
  • 1993-06-15 JP JP5143759A patent/JPH06163201A/ja active Pending
  • 1993-06-15 EP EP93201714A patent/EP0575003B1/de not_active Expired - Lifetime
  • 1993-06-15 ES ES93201714T patent/ES2130212T3/es not_active Expired - Lifetime
  • 1993-06-15 DE DE59309376T patent/DE59309376D1/de not_active Expired - Fee Related
  • 1993-09-21 TW TW082107731A patent/TW240321B/zh active
• 1996
  • 1996-04-25 US US08/639,327 patent/US5677070A/en not_active Expired - Fee Related
• 1997
  • 1997-02-25 US US08/805,527 patent/US5748069A/en not_active Expired - Fee Related

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