Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/0203—Particular design considerations for integrated circuits
  • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
  • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/16—Modifications for eliminating interference voltages or currents

Definitions

• the invention relates to an electronic, monolithically integrated device according to the preamble of the main claim.
• the transistor Because of the long lifespan of the charge carriers generated compared to the period of the alternating voltage, the transistor also remains with the Return from inverse operation to normal operation conductive if the charge carriers cannot flow out of the base. This means that the transistor can change from switched off to switched on under the influence of high-frequency alternating voltages, although it usually remains more high-resistance than when controlled by the regular base current.
• the electronic device according to the invention with the characterizing features of the main claim has the advantage that the blocked state of the transistor concerned is maintained. Further advantages result from subclaims 2 to 12 and from the description.
• Figure la, b shows the circuit of an NPN and PNP transistor
• FIG. 2 shows the time course of the collector voltage of the transistor generating the direct current under the influence of a superimposed high-frequency alternating voltage, provided the transistor remains blocked.
• FIG. 3 shows the circuitry of the transistor with a sufficiently low resistance between base and emitter or a controlled transistor as a replacement
• FIG. 4 shows a suitable control circuit for the transistor to be kept blocked.
• FIG. 5 shows an improved circuit compared to the circuit of FIG. 4, which is further simplified in FIG. 6.
• Figures 7 and 8 show a bracketing of the regular collector-base section with a Schottky diode. Description of the invention
• 01 is the ground-side connection
• 02 the connection for the positive pole of the operating voltage and 2 an NPN transistor, as is customarily shown on a p-type substrate, 21 its emitter, for example, directly connected to ground 01, 22 its base and 23 its collector, which is connected on the one hand to the connection pad 03 and on the other hand forms the parasitic diode 3 with the substrate as the anode 32; whose cathode 31 thus corresponds to the collector 23 of 2.
• the arrangement for a PNP transistor 2 * is shown in FIG. 1b.
• FIG. 2 shows the time course of the collector potential U against ground. If the line connected to the connection spots 01, 03 comes into the field of a strong transmitter, then amplitudes can be influenced which go far beyond the direct potential U currently present between the collector 23 and the emitter 21; this occurs at time t.
• a rich current is preferably produced in the substrate diode 3, which raises the DC potential U 1 to the value U 1, provided that the transistor is not switched on by the high frequency due to the partial current flowing to the base.
• Directional current is preferably produced in the substrate diode 3, which raises the DC potential U 1 to the value U 1, provided that the transistor is not switched on by the high frequency due to the partial current flowing to the base.
• the transistor in this example normally remains conductive even during the positive half-wave, unless the charge carriers according to FIG. 3 have an intermediate base 22 and emitter 21 switched low-resistance resistor 4 can flow off.
• the low-resistance resistor 4 requires a high drive current for the base 22 of the transistor 2; it is therefore expedient to replace it with a controllable resistor, for example transistor 5.
• 6 is, for example, a current source that supplies the base current for the transistor 2; if 2 is to be de-energized, transistor 5 must be switched on via its base 52.
• the base current flowing at 52 is now to be chosen so high that the transistor 5 can not only derive the current from the current source 6, but also the portion of the directional current flowing based on 2.
• FIG. 5 shows a possible example: the transistor 55 supplies the additional auxiliary current from the alternating voltage rectified at its base-emitter diode, which is fed in via the capacitor 5 ⁇ .
• the directional current effective at the base of 54 is determined by means of the resistor 55. So that the transistor 5 can be switched on and off via its base input 52 even when larger RF voltages are present, the collector current of the transistor 54 is fed to the base of FIG. 5 via the AND link 53. So the RF voltage can only be effective if 52 is positive, ie transistor 5 is live and transistor 2 is blocked.
• the circuit according to FIG. 5 can be simplified considerably according to FIG. 6: the powerful direct current flowing in the substrate diode 3 injects a minority current into the substrate. Part of this current can be used as the base current for transistor 54; if the transistor 54 is arranged adjacent to the transistor 2, a part of the minority current consisting of electrons flows onto the n-doped base of 54, which is connected to positive voltage; the system controls itself. Capacitor 56 and resistor 55 can be saved. From fast bipolar logic circuits it is known to avoid the saturation range of the collectors by a Schottky diode from the collector to the base of the switching transistors, whereby the transistors switch considerably faster. This measure also helps here: If, as in FIG.
• the cathode of the Schottky diode 8 is connected to the collector 23 and the anode is connected to the base 22, the directional current generated when the collector 23 is immersed below the ground potential 01 is largely dependent on the Schottky diode 8 men.
• Figure 8 shows the wiring of a corresponding PNP transistor.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Bipolar Integrated Circuits (AREA)

Applications Claiming Priority (2)

Publications (1)

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• 1988
  • 1988-09-02 DE DE19883829843 patent/DE3829843A1/de not_active Withdrawn
• 1989
  • 1989-08-09 EP EP19890908806 patent/EP0432175A1/de not_active Withdrawn
  • 1989-08-09 WO PCT/DE1989/000523 patent/WO1990003065A1/de not_active Application Discontinuation
  • 1989-08-09 JP JP50833889A patent/JPH04500292A/ja active Pending

Non-Patent Citations (1)

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