EP0403287A3 - Procédé de polissage de plaquettes semi-conductrices - Google Patents

Procédé de polissage de plaquettes semi-conductrices Download PDF

Info

Publication number
EP0403287A3
EP0403287A3 EP19900306519 EP90306519A EP0403287A3 EP 0403287 A3 EP0403287 A3 EP 0403287A3 EP 19900306519 EP19900306519 EP 19900306519 EP 90306519 A EP90306519 A EP 90306519A EP 0403287 A3 EP0403287 A3 EP 0403287A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor wafer
thickness
polishing semiconductor
plate
regulating member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19900306519
Other languages
German (de)
English (en)
Other versions
EP0403287B1 (fr
EP0403287A2 (fr
Inventor
Yasuaki Nakazato
Hiroo Ogawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP0403287A2 publication Critical patent/EP0403287A2/fr
Publication of EP0403287A3 publication Critical patent/EP0403287A3/fr
Application granted granted Critical
Publication of EP0403287B1 publication Critical patent/EP0403287B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP90306519A 1989-06-16 1990-06-14 Procédé de polissage de plaquettes semi-conductrices Expired - Lifetime EP0403287B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1153748A JPH0319336A (ja) 1989-06-16 1989-06-16 半導体ウェーハの研磨方法
JP153748/89 1989-06-16

Publications (3)

Publication Number Publication Date
EP0403287A2 EP0403287A2 (fr) 1990-12-19
EP0403287A3 true EP0403287A3 (fr) 1991-10-23
EP0403287B1 EP0403287B1 (fr) 1994-10-05

Family

ID=15569254

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90306519A Expired - Lifetime EP0403287B1 (fr) 1989-06-16 1990-06-14 Procédé de polissage de plaquettes semi-conductrices

Country Status (3)

Country Link
EP (1) EP0403287B1 (fr)
JP (1) JPH0319336A (fr)
DE (1) DE69013065T2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366924A (en) * 1992-03-16 1994-11-22 At&T Bell Laboratories Method of manufacturing an integrated circuit including planarizing a wafer
US5445996A (en) * 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
GB2275129B (en) * 1992-05-26 1997-01-08 Toshiba Kk Method for planarizing a layer on a semiconductor wafer
JP2778659B2 (ja) 1993-12-24 1998-07-23 キヤノン株式会社 導光体及び照明装置及び画像読取装置
JP3983887B2 (ja) * 1998-04-09 2007-09-26 沖電気工業株式会社 基板研磨用治具及び半導体ウエハの研磨方法
CN105199610B (zh) * 2015-10-16 2017-12-19 郑州磨料磨具磨削研究所有限公司 一种蓝宝石抛光组合物及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979868A (en) * 1957-11-29 1961-04-18 Siemens Ag Lapping device for semiconductor wafers
US3559346A (en) * 1969-02-04 1971-02-02 Bell Telephone Labor Inc Wafer polishing apparatus and method
US4165584A (en) * 1977-01-27 1979-08-28 International Telephone And Telegraph Corporation Apparatus for lapping or polishing materials
FR2521895A1 (fr) * 1982-02-23 1983-08-26 Ansermoz Raymond Tasseau multiple pour le rodage, au lapidaire, de pieces en forme de lames minces
JPS6451268A (en) * 1987-08-19 1989-02-27 Sanyo Electric Co Mechanical polishing method
JPS6471663A (en) * 1987-09-08 1989-03-16 Hitachi Cable Lapping method for gaas wafer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3351687B2 (ja) * 1996-08-05 2002-12-03 株式会社東芝 雑音消去に用いられるフィルタ演算装置及びフィルタ演算方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979868A (en) * 1957-11-29 1961-04-18 Siemens Ag Lapping device for semiconductor wafers
US3559346A (en) * 1969-02-04 1971-02-02 Bell Telephone Labor Inc Wafer polishing apparatus and method
US4165584A (en) * 1977-01-27 1979-08-28 International Telephone And Telegraph Corporation Apparatus for lapping or polishing materials
FR2521895A1 (fr) * 1982-02-23 1983-08-26 Ansermoz Raymond Tasseau multiple pour le rodage, au lapidaire, de pieces en forme de lames minces
JPS6451268A (en) * 1987-08-19 1989-02-27 Sanyo Electric Co Mechanical polishing method
JPS6471663A (en) * 1987-09-08 1989-03-16 Hitachi Cable Lapping method for gaas wafer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 13, no. 244 (M-834)(3592) 07 June 1989, & JP-A-01 051 268 (SANYO) 27 February 1989, *
SOVIET INVENTIONS ILLUSTRATED, Sections P/Q, week 8544, 11 December 1985. Derwent Publications Ltd., London GB. *

Also Published As

Publication number Publication date
DE69013065T2 (de) 1995-01-26
EP0403287B1 (fr) 1994-10-05
JPH0319336A (ja) 1991-01-28
EP0403287A2 (fr) 1990-12-19
DE69013065D1 (de) 1994-11-10

Similar Documents

Publication Publication Date Title
EP0264572B1 (fr) Machine de polissage
EP0185767A4 (fr) Film d'usinage de tranches de semi-conducteurs.
EP0904895A3 (fr) Procédé et dispositif pour le polissage d'un substrat
EP0373501A3 (fr) Composition pour le polissage fin de plaquettes
MY110845A (en) Wafer polishing apparatus and method
EP0454362A3 (en) Backing pad, method for precision surface machining thereof, and method for polishing semiconductor wafer by use of the backing pad
EP0400658A3 (fr) Matériau abrasif enrobé, son procédé de fabricaton et son utilisation
WO1995006544A1 (fr) Plateau porte-disque pour operations d'usinage
MY115213A (en) Process for recovering substrates
MY121663A (en) Composition and method for polishing rigid disks
EP0776030A3 (fr) Appareillage et méthode de polissage des deux faces d'une tranche semiconductrice
AU590669B2 (en) Substrate for abrasive grit adhesives
TW377467B (en) Polishing system, polishing method, polishing pad, and method of forming polishing pad
EP0393951A3 (fr) Trenche de silicium semi-conductrice et son prodédé de fabrication
MY132834A (en) Method of processing semiconductor wafers
WO2001028739A8 (fr) Dispositif de polissage pour bord peripherique exterieur de tranche de semi-conducteur
EP0403287A3 (fr) Procédé de polissage de plaquettes semi-conductrices
EP0860238A3 (fr) Appareil de polissage
DE3174850D1 (en) Contact lens construction
EP0336066A3 (fr) Meule de rectification en plongée
JPS57170538A (en) Polishing method for one side of semiconductor wafer
EP0391708A3 (fr) Configuration de métallisation de face arrière pour dispositifs à semiconducteur
EP1125686A4 (fr) Disque de maintien de piece pour polissage, appareil de maintien de piece et procede de polissage de piece
TW374039B (en) Wafer processing apparatus
ATE19195T1 (de) Zahnaerztliches handstueck.

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB

17P Request for examination filed

Effective date: 19920416

17Q First examination report despatched

Effective date: 19930712

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REF Corresponds to:

Ref document number: 69013065

Country of ref document: DE

Date of ref document: 19941110

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19990609

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19990610

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19990614

Year of fee payment: 10

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20000614

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20000614

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20010228

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20010403