JPH0319336A - 半導体ウェーハの研磨方法 - Google Patents
半導体ウェーハの研磨方法Info
- Publication number
- JPH0319336A JPH0319336A JP1153748A JP15374889A JPH0319336A JP H0319336 A JPH0319336 A JP H0319336A JP 1153748 A JP1153748 A JP 1153748A JP 15374889 A JP15374889 A JP 15374889A JP H0319336 A JPH0319336 A JP H0319336A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- semiconductor wafer
- wafer
- thickness
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000005498 polishing Methods 0.000 title claims abstract description 66
- 235000012431 wafers Nutrition 0.000 claims abstract description 102
- 230000001105 regulatory effect Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000002344 surface layer Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000004744 fabric Substances 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153748A JPH0319336A (ja) | 1989-06-16 | 1989-06-16 | 半導体ウェーハの研磨方法 |
| DE69013065T DE69013065T2 (de) | 1989-06-16 | 1990-06-14 | Verfahren zum Polieren von Halbleiterplättchen. |
| EP90306519A EP0403287B1 (fr) | 1989-06-16 | 1990-06-14 | Procédé de polissage de plaquettes semi-conductrices |
| US07/781,644 US5191738A (en) | 1989-06-16 | 1991-10-25 | Method of polishing semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153748A JPH0319336A (ja) | 1989-06-16 | 1989-06-16 | 半導体ウェーハの研磨方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0319336A true JPH0319336A (ja) | 1991-01-28 |
Family
ID=15569254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1153748A Pending JPH0319336A (ja) | 1989-06-16 | 1989-06-16 | 半導体ウェーハの研磨方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0403287B1 (fr) |
| JP (1) | JPH0319336A (fr) |
| DE (1) | DE69013065T2 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6102780A (en) * | 1998-04-09 | 2000-08-15 | Oki Electric Industry Co., Ltd. | Substrate polishing apparatus and method for polishing semiconductor substrate |
| US6346997B1 (en) | 1993-12-24 | 2002-02-12 | Canon Kabushiki Kaisha | Illumination device, image reading apparatus having the device and information processing system having the apparatus |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366924A (en) * | 1992-03-16 | 1994-11-22 | At&T Bell Laboratories | Method of manufacturing an integrated circuit including planarizing a wafer |
| GB2275129B (en) * | 1992-05-26 | 1997-01-08 | Toshiba Kk | Method for planarizing a layer on a semiconductor wafer |
| US5445996A (en) * | 1992-05-26 | 1995-08-29 | Kabushiki Kaisha Toshiba | Method for planarizing a semiconductor device having a amorphous layer |
| CN105199610B (zh) * | 2015-10-16 | 2017-12-19 | 郑州磨料磨具磨削研究所有限公司 | 一种蓝宝石抛光组合物及其制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6471663A (en) * | 1987-09-08 | 1989-03-16 | Hitachi Cable | Lapping method for gaas wafer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1110544B (de) * | 1957-11-29 | 1961-07-06 | Siemens Ag | Einscheiben-Laeppmaschine fuer Halbleiterscheiben |
| US3559346A (en) * | 1969-02-04 | 1971-02-02 | Bell Telephone Labor Inc | Wafer polishing apparatus and method |
| US4165584A (en) * | 1977-01-27 | 1979-08-28 | International Telephone And Telegraph Corporation | Apparatus for lapping or polishing materials |
| FR2521895A1 (fr) * | 1982-02-23 | 1983-08-26 | Ansermoz Raymond | Tasseau multiple pour le rodage, au lapidaire, de pieces en forme de lames minces |
| JPS6451268A (en) * | 1987-08-19 | 1989-02-27 | Sanyo Electric Co | Mechanical polishing method |
| JP3351687B2 (ja) * | 1996-08-05 | 2002-12-03 | 株式会社東芝 | 雑音消去に用いられるフィルタ演算装置及びフィルタ演算方法 |
-
1989
- 1989-06-16 JP JP1153748A patent/JPH0319336A/ja active Pending
-
1990
- 1990-06-14 EP EP90306519A patent/EP0403287B1/fr not_active Expired - Lifetime
- 1990-06-14 DE DE69013065T patent/DE69013065T2/de not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6471663A (en) * | 1987-09-08 | 1989-03-16 | Hitachi Cable | Lapping method for gaas wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6346997B1 (en) | 1993-12-24 | 2002-02-12 | Canon Kabushiki Kaisha | Illumination device, image reading apparatus having the device and information processing system having the apparatus |
| US6102780A (en) * | 1998-04-09 | 2000-08-15 | Oki Electric Industry Co., Ltd. | Substrate polishing apparatus and method for polishing semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0403287A3 (fr) | 1991-10-23 |
| DE69013065D1 (de) | 1994-11-10 |
| EP0403287A2 (fr) | 1990-12-19 |
| EP0403287B1 (fr) | 1994-10-05 |
| DE69013065T2 (de) | 1995-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5191738A (en) | Method of polishing semiconductor wafer | |
| US6180020B1 (en) | Polishing method and apparatus | |
| US5032544A (en) | Process for producing semiconductor device substrate using polishing guard | |
| US3857123A (en) | Apparatus for waxless polishing of thin wafers | |
| US3841031A (en) | Process for polishing thin elements | |
| JP2000091280A (ja) | 半導体研磨装置及び半導体基板の研磨方法 | |
| EP1205280B1 (fr) | Procede et dispositif de polissage de tranche | |
| TWI824024B (zh) | 矩形基板的磨削方法 | |
| US6271140B1 (en) | Coaxial dressing for chemical mechanical polishing | |
| US6406357B1 (en) | Grinding method, semiconductor device and method of manufacturing semiconductor device | |
| JPH0319336A (ja) | 半導体ウェーハの研磨方法 | |
| US6478977B1 (en) | Polishing method and apparatus | |
| US5934981A (en) | Method for polishing thin plate and apparatus for polishing | |
| JP4793680B2 (ja) | 半導体ウェーハの研磨方法 | |
| JPH01188265A (ja) | ラツプ加工装置 | |
| JP3821944B2 (ja) | ウェーハの枚葉式研磨方法とその装置 | |
| JP3755709B2 (ja) | 半導体ウェーハの研磨装置 | |
| JP2018032832A (ja) | ウェハの表面処理装置 | |
| KR100436825B1 (ko) | 연마장치 및 그 장치를 사용한 반도체제조방법 | |
| JP2001328062A (ja) | 半導体ウェーハの研磨方法およびその装置 | |
| EP1308243B1 (fr) | Procédé de polissage | |
| EP1297927A2 (fr) | Appareil de polissage | |
| JPH0236069A (ja) | ウェーハの製造方法 | |
| JP2002261055A (ja) | 化学的機械研磨装置及び化学的機械研磨方法 | |
| JPS6020852A (ja) | ウエハの接着方法 |