EP1308243B1 - Procédé de polissage - Google Patents

Procédé de polissage Download PDF

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Publication number
EP1308243B1
EP1308243B1 EP02025724A EP02025724A EP1308243B1 EP 1308243 B1 EP1308243 B1 EP 1308243B1 EP 02025724 A EP02025724 A EP 02025724A EP 02025724 A EP02025724 A EP 02025724A EP 1308243 B1 EP1308243 B1 EP 1308243B1
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EP
European Patent Office
Prior art keywords
polishing
grindstone
processing
polishing tool
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP02025724A
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German (de)
English (en)
Other versions
EP1308243A1 (fr
Inventor
Shigeo Moriyama
Katsuhiko Yamaguchi
Yoshio Homma
Sunao Matsubara
Yoshihiro Ishida
Ryousei Kawa-Ai
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Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to DE69534313T priority Critical patent/DE69534313T2/de
Priority to EP02025724A priority patent/EP1308243B1/fr
Priority claimed from EP95931398A external-priority patent/EP0874390B1/fr
Publication of EP1308243A1 publication Critical patent/EP1308243A1/fr
Application granted granted Critical
Publication of EP1308243B1 publication Critical patent/EP1308243B1/fr
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure

Definitions

  • the present invention relates to a technique for planarizing a substrate surface pattern by polishing.
  • the invention is concerned with a polishing method for use in the process for fabricating a semiconductor integrated circuit, as well as a polishing apparatus to be used in the polishing method.
  • the semiconductor manufacturing process comprises many processes. Description will be directed first to a wiring process as an example of process to which the invention is applied, with reference to Figs. 1(a) to 1(f).
  • Fig. 1(a) is a sectional view of a wafer with a first layer of wiring formed thereon.
  • an insulating film 2 On the surface of a wafer substrate 1 with a transistor portion formed thereon is formed an insulating film 2, on which is further formed a wiring layer 3 such as aluminum layer for example.
  • a wiring layer 3 such as aluminum layer for example.
  • contact holes are formed in the insulating film 2 and therefore the portions, indicated at 3', of the wiring layer corresponding to the contact holes are somewhat depressed.
  • a photoresist film 6 for exposure to make the aluminum layer into a wiring pattern is applied onto the aluminum layer.
  • a wiring circuit pattern of the second layer is transferred by exposure onto the photoresist film 6 with use of a stepper 7.
  • a stepper 7 In this case, if the surface of the photoresist film 6 is concavo-convex, the concave and convex portions, indicated at 8, on the surface of the photoresist film are not simultaneously in focus, thus resulting in unsatisfactory resolution, which is a serious problem.
  • the following planarizing process for the substrate surface has been studied. Following the step shown in Fig. 1(a) polishing is applied, after the formation of the insulating layer 4, as shown in Fig. 1(d), by a method as described later so that the layer 4 becomes flat to the level of 9 in the same figure. In this way the state of Fig. 1(e) is obtained. Thereafter, a metal aluminum layer 5 and a photoresist layer 6 are formed, followed by exposure using the stepper 7 as in Fig. 1 (f). In this state the foregoing problem of unsatisfactory resolution does not occur.
  • Fig. 2 there is illustrated a chemical mechanical polishing method which has heretofore been commonly adopted for planarizing the aforesaid insulating film pattern.
  • a polishing pad 11 is stuck on a surface table 12 and is allowed to rotate.
  • the polishing pad 11 there is used, for example, a pad obtained by slicing and molding a foamed urethane resin into a thin sheet.
  • Suitable material and fine surface structure are selected from among various materials and fine surface structures according to the type of workpiece and the degree of surface roughness to be attained finally.
  • the wafer 1 to be processed is fixed to a wafer holder 14 through an elastic pressing pad 13.
  • the wafer holder 14 While the wafer holder 14 is rotated, it is pressed against the surface of the polishing pad 11, and a polishing slurry 15 is fed onto the polishing pad, whereby the convex portions of the insulating film 4 on the wafer surface is polished off, thus affording a flat surface.
  • colloidal silica is in the form of a suspension of fine silica particles 30 nm or so in diameter in an aqueous alkali solution such as a potassium hydroxide solution. Because of an additional chemical action in the presence of alkali, the use of such colloidal silica is characteristic in that an extremely high processing efficiency and a smooth surface with reduced processing damage are obtained in comparison with a mechanical polishing using abrasive alone. This method thus involving the supply of polishing slurry between the polishing pad and the workpiece during processing is well known as a free abrasive polishing technique.
  • the conventional wafer planarizing technique using such free abrasive polishing method involves two problems difficult to be solved when classified broadly.
  • One problem is a pattern size dependence problem such that in a certain type of pattern or a certain state of difference in height it is impossible to attain planarization to a satisfactory extent.
  • the other problem consists in an excessively high cost of consumption articles required in the polishing process.
  • a semiconductor wafer on a semiconductor wafer are formed patterns having various sizes and differences in height.
  • a semiconductor memory device as shown in Fig. 3(a), one chip is divided broadly into four blocks, and in the interior of each block are formed fine memory cells regularly and densely, which cell portion is called a memory mat portion 16.
  • a peripheral circuit 17 for making access to the above memory cells.
  • one chip size is about 7mm x 20mm, and the width of the peripheral circuit 17 is 1mm or so.
  • the section of the chip taken on line A-A' as shown in Fig.
  • an average height of a memory mat portion 16H is about 0.5 to 1 ⁇ m higher than that of a peripheral circuit portion 17L. If an insulating film 4 of about 1 to 2 ⁇ m thick is formed on such a stepped pattern, a sectional shape 31 of the surface portion substantially reflects the stepped shape of the base pattern.
  • the insulating film 4 on the wafer surface is to be rendered flat like a dot-dashline 32.
  • the planarization intended as above is not attained because the polishing speed involves pattern dependence. More specifically, as shown in Fig. 4, if a soft polishing pad 11L is used, the surface of the polishing pad is deformed like a solid line 30 in the figure due to the polishing load.
  • a fine pattern with a size of the order of micron is polished flat in a short time because of concentration of load, but in the case of a large pattern with a size of the order of millimeter, the polishing speed is low because the load applied thereto is in the form of a distributed load.
  • the sectional shape after polishing becomes like a broken line 34 in the figure, there still remaining a difference in height,d.
  • a polishing pad having a characteristic intermediate between hard and soft polishing pads As a polishing pad having a characteristic intermediate between hard and soft polishing pads, a polishing pad comprising a soft pad and hard polishing pellets embedded in part of the soft pad is disclosed in Japanese Patent Laid Open No. Hei 6-208980. However, the polishing characteristic obtained is almost the same as that of a polishing pad having an intermediate hardness.
  • the second subject to be attained by the planarization technique for a semiconductor wafer based on the above conventional free abrasive polishing method is the reduction of running cost which is high. This is attributable to a low utilization efficiency of polishing slurry used in the free abrasive polishing method. More particularly, for ultra-smooth polishing not causing polishing flaw, it is necessary that a polishing slurry, for example colloidal silica, be fed at a rate of several hundred cc/min or more. However, the greater part of the slurry is wasted without contributing to the actual processing. The cost of a high purity slurry for semiconductor is extremely high, and the cost of the planarizing polishing process is mostly dependent on the polishing slurry. Thus, it has keenly been desired to make an improvement on this point.
  • the problem of processing damage to ultra-fine patterns which is apt to occur in the use of a hard polishing tool can be solved not by planarizing all the patterns by a single processing as in the prior art but by first planarizing only such fine patterns as are apt to be damaged, using a soft polishing tool, and thereafter planarizing large patterns in a highly efficient manner with a large processing force using a hard polishing tool such as a hard grindstone or polishing pad as defined by the method in accordance with claim 1.
  • the fixed abrasive processing method of the present invention uses a certain type of grindstone and processing conditions selected most suitably in conformity with the physical properties of a workpiece, even if the polishing tool used is hard, it is possible to effect a planarizing process with little pattern dependence and little unevenness in the processing speed in the substrate plane, without causing unevenness in processing. Besides, an extremely low running cost can be realized because an expensive polishing slurry is not needed. Moreover, washing after the processing becomes easier.
  • corner portions of ultra-fine patterns which are apt to undergo processing damage and those of large-sized patterns which are apt to be dropped out are polished, cut and rounded beforehand with a soft polishing pad of a low rigidity and are thereafter planarized with a hard polishing pad having a high shape creating function, it is possible to obtain a satisfactory processed surface with reduced pattern width dependence and free of processing damage.
  • an extremely soft grindstone is used wherein grains 21 are loosely bonded with a soft resin 22 as shown in Fig. 5.
  • the grindstone has an elastic modulus of 5 to 500 kg/mm 2 and thus the hardness thereof is one tenth to one hundredth of that of conventional grindstones. Conversely, it is five to fifty times as hard as hard polishing pads, e.g. rigid polyurethane foam, which have heretofore been used in the field to which the invention is applied.
  • the grains 21 are mentioned grains of silicon dioxide, cerium oxide and alumina. Grains of 0.01 to 1 ⁇ m in diameter can afford a high processing efficiency without scratch.
  • the resin 22 for bonding the grains a high-purity organic resin such as a phenolic resin is preferred in the present invention.
  • the grains, after kneading with the bonding resin, is solidified by the application of an appropriate pressure and is then, if necessary, subjected to a treatment such as heat-hardening.
  • the hardness of the resulting grindstone can be controlled by suitably selecting the type of bonding resin and the pressure to be applied.
  • the hardness of the grindstone used is controlled to a value of 5 to 500 kg/mm 2 in terms of an elastic modulus.
  • an alkaline or acidic fluid may be supplied as in the conventional polishing technique, depending on the type of workpiece.
  • the workpiece is silicon dioxide or silicon
  • the use of an alkaline fluid is preferred, while where the workpiece is a metal such as, for example, aluminum or tungsten, an acidic fluid is preferred.
  • the elastic modulus of the grindstone used is outside the foregoing range, it will be impossible to effect processing in a satisfactory manner.
  • the elastic modulus of the grindstone used is less than 5 kg/mm 2 , only such patterns as are small in width will be polished quickly, that is, the pattern width dependence will become marked, resulting in that the memory device cannot be planarized.
  • the elastic modulus of the grindstone used is larger than 500 kg/mm 2 , the problem of scratching still remains to be solved no matter how small the grain diameter of the grindstone may be.
  • a more preferred range is 50 to 150 kg/mm 2 .
  • the pattern damage problem which is attributable to the above stress concentration at the initial stage of processing can be overcome by removing beforehand pattern corner portions which will cause the stress concentration and also removing fine patterns. More specifically, as shown in Fig. 7(b), the problem in question can be solved by rounding corner portions 105 of the wide pattern and by reducing the height of the fine pattern and rounding corner portions thereof, as indicated at 106. Stress distribution for such patterns is not concentrated, as shown in the lower diagram of the same figure, thus permitting application of a large polishing load even in the use of a polishing tool harder than in the prior art. As a result, it becomes possible to realize a processing of reduced pattern width dependence in a short time.
  • a wafer surface 31 to be processed is polished for one minute or so using a soft polishing pad 11L (a pad having fine pores in the pad surface like, for example, SUPREME-RN, a product of RODEL NITTA Co.) and a polishing slurry (not shown).
  • a soft polishing pad 11L a pad having fine pores in the pad surface like, for example, SUPREME-RN, a product of RODEL NITTA Co.
  • a polishing slurry there may be used any of those used extremely commonly such as colloidal silica, cerium oxide and alumina.
  • fine pattern portions of the order of submicron, which had been present before processing, disappeared by polishing and large pattern corner portions were also rounded.
  • polishing is performed for 3 minutes or so using a hard polishing tool 11H superior in planarizing function, for example a grindstone of the construction shown in Fig. 5. Since fine patterns apt to be damaged have already been removed in the first step described above, even if there is used a polishing tool harder than that used in the first step, cracks are not developed at the base portions of fine patterns, and it is possible to carry out a damage-free planarization process, as shown in Fig. 8(c).
  • the polishing tool used in the second polishing step is not specially limited insofar as it can polish the wafer surface flatwise at a high speed. Not only the grindstone for polishing but also a quite common combination of a conventional hard polishing pad formed of polyurethane foam with colloidal silica will do. However, by using a grindstone of 5 to 500 kg/mm 2 in elastic modulus there can be obtained a flat, crack-free polished surface in a short time.
  • the hardness of the polishing pad used in the first step is harder than that of the pad used in the second step.
  • it is intended to first remove the factor of such processing damage, and thus the technical concept of the present invention is quite different from that of the known methods.
  • Figs. 10(a) to (e) show an example of a manufacturing process for a memory cell comprising one transistor and one capacitor according to the present invention.
  • the sectional views of Fig. 10 are taken along line A-A' in Fig. 11.
  • the numeral 110 denotes a source region
  • numeral 120 denotes a drain region
  • numerals 111 and 121 denote connecting portions for connection to the regions 110 and 120, respectively
  • numeral 210 denotes a capacitor lower electrode
  • numeral 230 denotes a capacitor upper electrode
  • numeral 106 denotes a bit line
  • numeral 141 denotes a gate electrode.
  • Fig. 10(a) is a sectional view of a p-type silicon substrate 101 after formation thereon, by a selective oxidation method, of an element isolation film 102 as a silicon oxide film of 800 nm thick for electrical isolation between memory cells and a silicon oxide film as a gate insulating film of a switching MOS transistor. Thereafter, boron is introduced by ion implantation to make a threshold voltage control for the MOS transistor, and further a polycrystalline silicon film serving as the gate electrode 141 is deposited to a thickness of 300 nm by a chemical vapor deposition method (hereinafter referred to simply as the CVD method).
  • CVD method chemical vapor deposition method
  • the gate electrode 141 and gate insulating film 130 of the MOS transistor are formed according to the known photoetching technique.
  • Phosphorus is added to the polycrystalline silicon film to render the same film conductive electrically.
  • arsenic is introduced by ion implantation to form the source region 110 and drain region 120 of the MOS transistor.
  • a PSG (phosphorus glass) film 103 serving as an interlayer insulating film is deposited on the substrate surface to a thickness of 500 nm by the CVD method, followed by polishing for planarization to about 200 nm.
  • Elastic modulus of the grindstone used for polishing the PSG film 103 is 50 kg/mm 2 .
  • a connecting portion 111 is formed in the PSG film and a bit line 106 is formed (Fig. 11).
  • a PSG film 104 serving as an interlayer insulating film is deposited to a thickness of 500 nm by the CVD method, followed by polishing for planarization and subsequent opening by photoetching to form a connecting portion 121.
  • the surface of the PSG film 104 is planarized with use of a grindstone having an elastic modulus of 50 kg/mm 2 . If the polishing of the PSG film with the grindstone of 50 kg/mm 2 in elastic modulus is preceded by polishing of the same film with a conventional soft polishing pad, the polishing can be effected in a state of reduced damage.
  • a polycrystalline silicon film serving as the capacitor lower electrode 210 is formed by the CVD method and is processed into a desired shape. Also to this polycrystalline silicon film is added phosphorus to render the film conductive electrically. Next, a capacitor insulating film 220 and a capacitor electrode 230 are formed on the polycrystalline silicon film (Fig. 10(e)).
  • This apparatus is basically a polishing apparatus of a two-platen, two-head construction, but is characterized by polishing tools on the platens and a method for operating them.
  • a grindstone platen 51 with the foregoing grindstone of a low elastic modulus bonded to the upper surface thereof and a polishing platen 52 with a polishing pad bonded to the upper surface thereof each rotate at a constant speed of 20 rpm or so.
  • a wafer 55 to be processed is taken out from a loader cassette 53 by means of a handling robot 54 and is placed on a load ring 57 which is carried on a direct-acting carrier 56.
  • the direct-acting carrier 57 moves leftward in the figure and is brought into a load/unload position, whereupon a polishing arm A58 rotates and the wafer 55 is vacuum-chucked to the underside of a wafer polishing holder 59 provided at the tip of the polishing arm.
  • the polishing arm A58 rotates in such a manner that the holder 59 is positioned on the polishing pad platen 52.
  • the holder 59 rotates while pushing down the wafer 55 onto the polishing pad 52 in the attracted state of the wafer to underside of the holder, allowing the wafer to be polished for about one minute under the supply of a polishing slurry (not shown).
  • the polishing arm A58 rotates so that, the wafer polishing holder 59 is positioned on the grindstone platen 51. Thereafter, the holder 59 rotates while pushing the wafer 55 onto the grindstone platen 51 in the chucked state of the wafer to the underside of the holder, and the wafer 55 is subjected to lapping for about two minutes under the supply of a polishing slurry (not shown) in the same way as above.
  • the polishing arm A58 again rotates so that the wafer polishing holder 59 becomes positioned on the polishing platen 52, and the wafer 55 is polished for about one minute in the same way as above.
  • This polishing operation after the lapping process is for removing slight scratches or the like developed in the lapping process.
  • the polishing process in question may be omitted depending on lapping conditions or the level of surface roughness required.
  • the polishing process is completed by the above three steps of polishing and the wafer then goes through a washing process.
  • the polishing arm A58 rotates so that the wafer polishing holder 59 is located above a washing position where a rotary brush 60 is disposed. While rotating, the rotary brush 60 washes, using a rinsing brush, the processed surface of the wafer 55 chucked to the underside of the holder 59.
  • the direct-acting carrier 56 again moves up to above the aforesaid washing position and receives the wafer which is now released from the vacuum chucking by the holder 59.
  • the wafer handling robot 54 chucks the processed wafer and stows it into an unloading cassette 61.
  • a polishing arm B62 also operates in the same manner. As a matter of course, this is for utilizing the two polishing surface tables effectively in a time-sharing manner. Operation sequence of the polishing arm B62 is just the same as that of the polishing arm A58, provided its phase lags by only half-cycle. That is, the polishing arm B62 starts operating in synchronism with the start of the foregoing second polishing step.
  • the construction of the above embodiment is suitable for the case where the number of polishing arms is two.
  • this construction if there is provided a position where the rotating paths of the two polishing arms cross or contact each other and if at that position there are provided a pair of washing brushes and a stop position of the direct-acting load/unload carrier, it is possible for the two polishing arms to also fulfill the functions concerned.
  • the present invention is applicable to not only semiconductor devices but also liquid crystal display devices, micromachines, magnetic disk substrates, optical disk substrate, Fresnel lens, and other optical elements having fine surface structures.

Claims (9)

  1. Procédé de fabrication de dispositif à semiconducteurs, comprenant les étapes consistant à :
    former sur un substrat (1) un premier film isolant (2) ayant une ouverture (3') ;
    former une première couche de câblage (3) s'étendant depuis l'intérieur de ladite ouverture (3') jusque sur ladite première couche isolante (2) ;
    former sur ladite première couche de câblage (3) un deuxième film isolant (4) plus épais que la première couche de câblage (3) ;
    polir et de ce fait niveler ledit deuxième film isolant (4) en utilisant successivement au moins deux outils de polissage ;
    former une deuxième couche de câblage (5) sur le deuxième film isolant nivelé (4) ;
       caractérisé en ce que
       le module d'élasticité de l'outil de polissage utilisé le premier lors de étape de nivellement dudit deuxième film isolant (4), c'est-à-dire le premier outil de polissage (11L), est inférieur à celui de l'outil de polissage utilisé ensuite, c'est-à-dire le deuxième outil de polissage (11H).
  2. Procédé selon la revendication 1, dans lequel le module d'élasticité du deuxième outil de polissage (11H) est de 5 à 500 kg/mm2.
  3. Procédé selon la revendication 1 ou 2, dans lequel un tampon à polir en résine est utilisé comme premier outil de polissage (11L).
  4. Procédé selon l'une quelconque des revendications précédentes, dans lequel ledit deuxième outil de polissage (11H) est une meule comportant des grains d'abrasif (21) et une matière pour lier et retenir lesdits grains d'abrasif (21).
  5. Procédé selon la revendication 4, dans lequel ladite matière (22) pour lier et retenir les grains d'abrasif est une résine organique.
  6. Procédé selon la revendication 4 ou 5, dans lequel lesdits grains d'abrasif (21) sont des grains de dioxyde de silicium, d'oxyde de cérium, d'aluminium ou d'un mélange de ceux-ci.
  7. Procédé selon l'une quelconque des revendications 4 à 6, dans lequel le diamètre moyen des grains d'abrasif (21) est de 1 µm ou moins.
  8. Procédé selon l'une quelconque des revendications précédentes, dans lequel ledit substrat (1) est poussé jusque sur ledit outil de polissage (11L, 11H) par un support rotatif tournant placé au-dessus de chacun desdits outils de polissage (11L, 11H) et tenant ledit substrat (1).
  9. Procédé selon l'une quelconque des revendications précédentes, comprenant en outre les étapes consistant à
       déplacer ledit bras rotatif vers une position de lavage,
       laver ledit substrat poli (1) ; et
       remplacer ledit substrat (1) par un substrat suivant.
EP02025724A 1995-09-13 1995-09-13 Procédé de polissage Expired - Lifetime EP1308243B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE69534313T DE69534313T2 (de) 1995-09-13 1995-09-13 Polierverfahren
EP02025724A EP1308243B1 (fr) 1995-09-13 1995-09-13 Procédé de polissage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP95931398A EP0874390B1 (fr) 1995-09-13 1995-09-13 Procede de polissage
EP02025724A EP1308243B1 (fr) 1995-09-13 1995-09-13 Procédé de polissage

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP95931398.2 Division 1997-03-20

Publications (2)

Publication Number Publication Date
EP1308243A1 EP1308243A1 (fr) 2003-05-07
EP1308243B1 true EP1308243B1 (fr) 2005-07-13

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EP02025724A Expired - Lifetime EP1308243B1 (fr) 1995-09-13 1995-09-13 Procédé de polissage

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Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3771857D1 (de) * 1986-12-08 1991-09-05 Sumitomo Electric Industries Flaechenschleifmaschine.
JPH0663862A (ja) * 1992-08-22 1994-03-08 Fujikoshi Mach Corp 研磨装置

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