EP0376787B1 - Temperaturregler für die Kennzeichen eines integrierten Schaltkreises - Google Patents

Temperaturregler für die Kennzeichen eines integrierten Schaltkreises Download PDF

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Publication number
EP0376787B1
EP0376787B1 EP89403487A EP89403487A EP0376787B1 EP 0376787 B1 EP0376787 B1 EP 0376787B1 EP 89403487 A EP89403487 A EP 89403487A EP 89403487 A EP89403487 A EP 89403487A EP 0376787 B1 EP0376787 B1 EP 0376787B1
Authority
EP
European Patent Office
Prior art keywords
temperature
circuit
transistors
voltages
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP89403487A
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English (en)
French (fr)
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EP0376787A1 (de
Inventor
Gérard Pataut
Pierre Quentin
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Teledyne e2v Semiconductors SAS
Original Assignee
Thomson SCF Semiconducteurs Specifiques
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Publication of EP0376787A1 publication Critical patent/EP0376787A1/de
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • the present invention relates to a device for controlling the temperature of monolithic integrated circuits, more particularly those which are produced on fast materials of group III-V such as GaAs.
  • the temperature behavior of circuits made on III-V substrates is one of the important parameters for the user. It must therefore be taken into account by the designer of the circuit, either by providing an accessible control electrode, or by producing on the circuit a device making it possible to correct the variations as a function of the temperature of the characteristic or characteristics of the circuit to be stabilized. .
  • US-A-4,723,108 describes a system integrated on the chip of the circuit to be checked, but its principle is different from that of the present invention.
  • a first current mirror uses the threshold voltage variation of a transistor as a temperature detector, to provide at the output of a second current mirror, a single variable voltage which makes it possible to act to compensate for the effects of temperature variation.
  • the temperature control device associates the control circuit with the circuit to be stabilized, in a single circuit produced in a homogeneous integrated circuit technology, microwave on Gallium Arsenide for example.
  • the manufacture of the two circuits side by side on the same substrate uses the standard stages of the technological process of the integrated circuit sectors.
  • the temperature is detected directly on the substrate and is used to control a correction voltage.
  • This technology must include at least two types of resistive elements, with different temperature coefficients. It is then possible to produce a divider bridge associating these two types of elements, capable of supplying a variable voltage as a function of temperature.
  • the device to be monitored must itself have the possibility of compensating for its thermal drifts with a DC voltage, such as, for example, the gate bias voltage to control the gain of a field effect transistor amplifier.
  • the invention relates to a device for controlling the temperature of the characteristics of an integrated circuit, carried by a substrate, this device, produced on the same substrate as the circuit to be stabilized, being characterized in that it comprises a divider bridge formed by four resistors (R1 - R4), supplied between two stable voltages (DC1 - DC2), these resistors being, in groups of two (R1 + R4), (R2 + R3) mounted diagonally from the bridge, opposite temperature coefficients, and delivering at their midpoints (A, B) two control voltages, which move in opposite directions with temperature.
  • a divider bridge formed by four resistors (R1 - R4), supplied between two stable voltages (DC1 - DC2), these resistors being, in groups of two (R1 + R4), (R2 + R3) mounted diagonally from the bridge, opposite temperature coefficients, and delivering at their midpoints (A, B) two control voltages, which move in opposite directions with temperature.
  • the measurement sensor of the control device comprises two resistors R1 and R2 mounted as a voltage divider bridge, supplied at its two terminals by external DC voltage generators, stable in temperature, DC1 and DC2; one of these two voltages can be in OV potential of the circuit (ground).
  • Resistors R1 and R2 have different thermal coefficients ⁇ 1 and ⁇ 2.
  • the output voltage Vc1 of the divider bridge is variable according to the temperature, and allows to control the circuit.
  • the choice of the value of DC1 makes it possible to calculate the value of DC2 and the ratio of the resistors R1 and R2. The value of these resistors is determined by the acceptable consumption in the controlled circuit compared to the consumption in the control circuit.
  • the values of the supply voltages DC1 and DC2 can then be used as a posterior adjustment means of the temperature control device.
  • an amplifier can be stabilized by controlling a stage of this amplifier with automatic gain control.
  • a bigrille field effect structure can also be controlled if the control voltage is applied to the second grid.
  • An oscillator can be stabilized in temperature by applying a control voltage to a varactor in the circuit.
  • Other applications may be concerned from the moment when the controlling voltage can be applied to a gate of a transistor or else to a diode.
  • the differential structure of Figure 2 has two parts: a first part which detects temperature variations and a second part which formats the signal intended for the control of the circuit to be controlled in temperature.
  • the temperature variations are detected with a resistance bridge balanced at T0 (20 ° C for example) and which provides a voltage proportional to the temperature as it varies.
  • This bridge is formed on the one hand by the resistors R1 and R2, supplied between DC1 and the ground, and on the other hand the resistors R3 and R4, supplied in the same way.
  • the bridge resistors have opposite temperature coefficients, mounted diagonally.
  • Resistors R1 to R4 have the same value at T0 but opposite temperature coefficients: R1 and R4 have the same coefficient and are made for example of titanium (positive temperature coefficient), while R2 and R3 are made for example of tantalum and have a negative temperature coefficient, opposite to that of R1 and R4. The variations of these resistances, with temperature, are shown in Figure 3.
  • the second part of the device is a differential structure with transistors.
  • the load of the two channels is active and can therefore be adapted to the circuit to be temperature compensated.
  • the transistors T2 and T3 are supplied, through the current source T1, between DC1 and ground: the unbalance voltages at points A and B of the resistance bridge are applied to the gates of T2 and T3.
  • the load transistors T4 and T7 are used to obtain the correct operating point at T0.
  • the transistors T 5 and T6, controlled by the voltages DC3 and DC4, make it possible to control the gain of this differential circuit as a function of the circuit to be stabilized.
  • the output voltages are supplied at points V2 and V3, common to T2 / T5 and T3 / T6 respectively.
  • the voltage V2 applied for example to the gate of a transistor of the circuit to be controlled - which is integrated on the same chip - makes it possible to stabilize it the characteristics if the temperature changes.
  • the simplified differential structure presented on the diagram of principle can be designed more completely so as to obtain a response V2 or V3 linear, parabolic, logarithmic, etc ... according to the circuits to stabilize.
  • the diagrams of these shaping circuits are known art in logic design.
  • the advantage of this new device is its full compatibility with the stages of production of the microwave channels.
  • the circuit is small and can be installed alongside a transistor or a varactor in the microwave circuit to be stabilized in temperature.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Control Of Temperature (AREA)

Claims (3)

  1. Vorrichtung zur Temperaturregelung von Kenngrößen einer auf einem Substrat angebrachten, integrierten Schaltung, wobei die auf dem gleichen Substrat wie die zu stabilisierende Schaltung angebrachte Vorrichtung dadurch gekennzeichnet ist, daß sie eine aus vier Widerständen (R₁ - R₄) gebildete Teilerbrücke enthält, die zwischen zwei stabilen Spannungen (DC₁ - DC₂) gespeist ist, wobei diese Widerstände diagonal in der Brücke (R₁ + R₄) (R₂ + R₃) angebracht sind, und entgegengesetzte Temperaturkoeffizienten haben und an ihren Mittelpunkten (A, B) zwei Regelspannungen liefern, die sich umgekehrt wie die Temperatur verhalten.
  2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß sie eine Differenzschaltung zum Formen der Regelsignale enthält, die aus zwei ersten Transistoren (T₂, T₃) und ihren Lasttransistoren (T₄, T₇) gebildet ist, die durch die Versorgungsspannungen (DC₁, DC₂) der Meßbrücke mittels einer Stromquelle (T₁) gespeist werden, wobei die Fehlabgleichspannungen der Brücke an die Steuerelektroden der zwei ersten Transistoren (T₂, T₃) angelegt werden und die Ausgangsspannungen (V₂, V₃) an gemeinsamen Punkten zwischen den ersten Transistoren (T₂, T₃) und ihren Lasttransistoren (T₄, T₇) abgegriffen werden.
  3. Vorrichtung nach Anspruch 2, dadurch gekennzeichnet, daß sie zum Regeln der Verstärkung der Differenzschaltung abhängig von der zu stabilisierenden integrierten Schaltung ferner zwei Regeltransistoren (T₅, T₆) enthält, die parallel zu den Lasttransistoren (T₄, T₇) geschaltet sind, wobei an die Steuerelektroden der Regeltransistoren (T₅, T₆) Regelspannungen (DC₃, DC₄) angelegt sind.
EP89403487A 1988-12-23 1989-12-14 Temperaturregler für die Kennzeichen eines integrierten Schaltkreises Expired - Lifetime EP0376787B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8817091 1988-12-23
FR8817091A FR2641127B1 (de) 1988-12-23 1988-12-23

Publications (2)

Publication Number Publication Date
EP0376787A1 EP0376787A1 (de) 1990-07-04
EP0376787B1 true EP0376787B1 (de) 1994-07-13

Family

ID=9373354

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89403487A Expired - Lifetime EP0376787B1 (de) 1988-12-23 1989-12-14 Temperaturregler für die Kennzeichen eines integrierten Schaltkreises

Country Status (5)

Country Link
US (1) US4952865A (de)
EP (1) EP0376787B1 (de)
JP (1) JPH02264310A (de)
DE (1) DE68916774T2 (de)
FR (1) FR2641127B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444219A (en) * 1990-09-24 1995-08-22 U.S. Philips Corporation Temperature sensing device and a temperature sensing circuit using such a device
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
IE913900A1 (en) * 1990-12-28 1992-07-01 Eaton Corp Sure chip plus
US5639163A (en) * 1994-11-14 1997-06-17 International Business Machines Corporation On-chip temperature sensing system
US5946181A (en) * 1997-04-30 1999-08-31 Burr-Brown Corporation Thermal shutdown circuit and method for sensing thermal gradients to extrapolate hot spot temperature
US6437634B1 (en) * 1997-11-27 2002-08-20 Nec Corporation Semiconductor circuit in which distortion caused by change in ambient temperature is compensated
TW200624826A (en) * 2004-10-29 2006-07-16 Koninkl Philips Electronics Nv System for diagnosing impedances having accurate current source and accurate voltage level-shift
SG129370A1 (en) * 2005-08-01 2007-02-26 Marvell World Trade Ltd On-die heating circuit and control loop for rapid heating of the die
US7852098B2 (en) * 2005-08-01 2010-12-14 Marvell World Trade Ltd. On-die heating circuit and control loop for rapid heating of the die
TW201003356A (en) * 2008-07-10 2010-01-16 Mobien Corp Resistor device and circuit using the same
FR3140988A1 (fr) * 2022-10-17 2024-04-19 Stmicroelectronics (Rousset) Sas Circuit de protection contre les surchauffes

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30586A (en) * 1860-11-06 Dooe-lock
DE1200426B (de) * 1960-11-01 1965-09-09 Ericsson Telefon Ab L M Anordnung zur temperaturabhaengigen Regelung der Ausgangsspannung einer Energiequelle
US3887863A (en) * 1973-11-28 1975-06-03 Analog Devices Inc Solid-state regulated voltage supply
JPS51138848A (en) * 1975-05-28 1976-11-30 Hitachi Ltd Steady current circuit
JPS5913052B2 (ja) * 1975-07-25 1984-03-27 日本電気株式会社 基準電圧源回路
US4263519A (en) * 1979-06-28 1981-04-21 Rca Corporation Bandgap reference
JPS56118362A (en) * 1980-02-22 1981-09-17 Toshiba Corp Semiconductor integrated circuit device
JP2575611B2 (ja) * 1984-11-12 1997-01-29 日本電気株式会社 集積回路化半導体変換器
US4622512A (en) * 1985-02-11 1986-11-11 Analog Devices, Inc. Band-gap reference circuit for use with CMOS IC chips
US4723108A (en) * 1986-07-16 1988-02-02 Cypress Semiconductor Corporation Reference circuit
US4882533A (en) * 1987-08-28 1989-11-21 Unitrode Corporation Linear integrated circuit voltage drop generator having a base-10-emitter voltage independent current source therein
US4883992A (en) * 1988-09-06 1989-11-28 Delco Electronics Corporation Temperature compensated voltage generator

Also Published As

Publication number Publication date
JPH02264310A (ja) 1990-10-29
EP0376787A1 (de) 1990-07-04
US4952865A (en) 1990-08-28
FR2641127B1 (de) 1993-12-24
DE68916774D1 (de) 1994-08-18
FR2641127A1 (de) 1990-06-29
DE68916774T2 (de) 1994-11-10

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