EP0376787A1 - Temperaturregler für die Kennzeichen eines integrierten Schaltkreises - Google Patents

Temperaturregler für die Kennzeichen eines integrierten Schaltkreises Download PDF

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Publication number
EP0376787A1
EP0376787A1 EP89403487A EP89403487A EP0376787A1 EP 0376787 A1 EP0376787 A1 EP 0376787A1 EP 89403487 A EP89403487 A EP 89403487A EP 89403487 A EP89403487 A EP 89403487A EP 0376787 A1 EP0376787 A1 EP 0376787A1
Authority
EP
European Patent Office
Prior art keywords
temperature
transistors
circuit
voltages
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89403487A
Other languages
English (en)
French (fr)
Other versions
EP0376787B1 (de
Inventor
Gérard Pataut
Pierre Quentin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Thomson Composants Microondes
Thomson SCF Semiconducteurs Specifiques
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Publication date
Application filed by Thomson Composants Microondes, Thomson SCF Semiconducteurs Specifiques filed Critical Thomson Composants Microondes
Publication of EP0376787A1 publication Critical patent/EP0376787A1/de
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Publication of EP0376787B1 publication Critical patent/EP0376787B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • the present invention relates to a device for controlling the temperature of monolithic integrated circuits, more particularly those which are produced on fast materials of group III-V such as GaAs.
  • One of the important parameters for the user is the temperature behavior of the circuits produced on III-V substrates. It must therefore be taken into account by the designer of the circuit, either by providing an accessible control electrode, or by producing on the circuit a device making it possible to correct the variations as a function of the temperature of the characteristic or characteristics of the circuit which must be stabilized. .
  • the methods currently used are all external to the circuit, whether regulating the ambient temperature, or a servo comprising a variable element depending on the temperature, generally correcting a parameter of the circuit with a voltage.
  • the temperature control device associates the control circuit with the circuit to be stabilized, in a single circuit produced in a homogeneous integrated circuit technology, microwave on Gallium Arsenide for example.
  • the manufacture of the two circuits side by side on the same substrate uses the standard stages of the technological process of the integrated circuit sectors.
  • the temperature is detected directly on the substrate and is used to control a correction voltage.
  • This technology must include at least two types of resistive elements, with different temperature coefficients. It is then possible to produce a divider bridge associating these two types of elements, capable of supplying a variable voltage as a function of temperature.
  • the device to be checked must, for its part, present the possibility of compensation for its thermal drifts by a DC voltage, such as, for example, the gate bias voltage to control the gain of a field effect transistor amplifier.
  • the invention relates to a device for controlling the temperature of the characteristics of an integrated circuit, carried by a substrate, characterized in that it comprises, integrated on the same substrate as the circuit to be stabilized, at least one divider bridge formed by two resistors supplied between two voltages, the resistors having different temperature coefficients, and preferably opposite, this bridge delivering at the point common to the two resistors a voltage depending on the temperature, which is used to control the integrated circuit at establish.
  • the measurement sensor of the control device comprises two resistors R1 and R2 mounted as a voltage divider bridge, supplied at its two terminals by external DC voltage generators, stable in temperature, DC1 and DC2; one of these two voltages can be in OV potential of the circuit (ground).
  • the resistors R1 and R2 have different thermal coefficients ⁇ 1 and ⁇ 2.
  • the output voltage Vc1 of the divider bridge is variable according to the temperature, and allows to control the circuit.
  • the choice of the value of DC1 makes it possible to calculate the value of DC2 and the ratio of the resistors R1 and R2.
  • the value of these resistors is determined by the acceptable consumption in the controlled circuit compared to the consumption in the control circuit.
  • the values of the supply voltages DC1 and DC2 can then be used as a posterior adjustment means of the temperature control device.
  • an amplifier can be stabilized by controlling a stage of this amplifier with automatic gain control.
  • a bigrille field effect structure can also be controlled if the control voltage is applied to the second grid.
  • An oscillator can be stabilized in temperature by applying a control voltage to a varactor in the circuit.
  • Other applications may be concerned from the moment when the controlling voltage can be applied to a gate of a transistor or else to a diode.
  • the differential structure of Figure 2 has two parts: a first part which detects temperature variations and a second part which formats the signal intended for controlling the circuit to be controlled in temperature.
  • the temperature variations are detected with a resistance bridge balanced at T0 (20 ° C for example) and which provides a voltage proportional to the temperature as it varies.
  • This bridge is formed on the one hand by the resistors R1 and R2, supplied between DC1 and the ground, and on the other hand the resistors R3 and R4, supplied in the same way.
  • the bridge resistors have opposite temperature coefficients, mounted diagonally.
  • Resistors R1 to R4 have the same value at T0 but opposite temperature coefficients: R1 and R4 have the same coefficient and are made for example of titanium (positive temperature coefficient), while R2 and R3 are made for example of tantalum and have a negative temperature coefficient, opposite to that of R1 and R4. The variations of these resistances, with temperature, are shown in Figure 3.
  • the second part of the device is a differential structure with transistors.
  • the load of the two channels is active and can therefore be adapted to the circuit to be temperature compensated.
  • the transistors T2 and T3 are supplied, through the current source T1, between DC1 and ground: the unbalance voltages at points A and B of the resistance bridge are applied to the gates of T2 and T3.
  • the load transistors T4 and T7 are used to obtain the correct operating point at T0.
  • the transistors T 5 and T6, controlled by the voltages DC3 and DC4, make it possible to control the gain of this differential circuit as a function of the circuit to be stabilized.
  • the output voltages are supplied at points V2 and V3, common to T2 / T5 and T3 / T6 respectively.
  • the voltage V2 applied for example to the gate of a transistor of the circuit to be controlled - which is integrated on the same chip - makes it possible to stabilize it the characteristics if the temperature changes.
  • the simplified differential structure presented on the diagram of principle can be designed more completely so as to obtain a response V2 or V3 linear, parabolic, logarithmic, etc ... according to the circuits to stabilize.
  • the diagrams of these shaping circuits are known art in logic design.
  • the advantage of this new device is its complete compatibility with the stages of production of the microwave channels.
  • the circuit is small and can be installed alongside a transistor or a varactor in the microwave circuit to be stabilized in temperature.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Control Of Temperature (AREA)
EP89403487A 1988-12-23 1989-12-14 Temperaturregler für die Kennzeichen eines integrierten Schaltkreises Expired - Lifetime EP0376787B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8817091A FR2641127B1 (de) 1988-12-23 1988-12-23
FR8817091 1988-12-23

Publications (2)

Publication Number Publication Date
EP0376787A1 true EP0376787A1 (de) 1990-07-04
EP0376787B1 EP0376787B1 (de) 1994-07-13

Family

ID=9373354

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89403487A Expired - Lifetime EP0376787B1 (de) 1988-12-23 1989-12-14 Temperaturregler für die Kennzeichen eines integrierten Schaltkreises

Country Status (5)

Country Link
US (1) US4952865A (de)
EP (1) EP0376787B1 (de)
JP (1) JPH02264310A (de)
DE (1) DE68916774T2 (de)
FR (1) FR2641127B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0495302A2 (de) * 1990-12-28 1992-07-22 Eaton Corporation Integrierte Schaltung mit Analog- und Digitalteilen und thermische Modellierung enthaltend

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5444219A (en) * 1990-09-24 1995-08-22 U.S. Philips Corporation Temperature sensing device and a temperature sensing circuit using such a device
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
US5639163A (en) * 1994-11-14 1997-06-17 International Business Machines Corporation On-chip temperature sensing system
US5946181A (en) * 1997-04-30 1999-08-31 Burr-Brown Corporation Thermal shutdown circuit and method for sensing thermal gradients to extrapolate hot spot temperature
US6437634B1 (en) * 1997-11-27 2002-08-20 Nec Corporation Semiconductor circuit in which distortion caused by change in ambient temperature is compensated
TW200624826A (en) * 2004-10-29 2006-07-16 Koninkl Philips Electronics Nv System for diagnosing impedances having accurate current source and accurate voltage level-shift
US7852098B2 (en) * 2005-08-01 2010-12-14 Marvell World Trade Ltd. On-die heating circuit and control loop for rapid heating of the die
SG129370A1 (en) * 2005-08-01 2007-02-26 Marvell World Trade Ltd On-die heating circuit and control loop for rapid heating of the die
TW201003356A (en) * 2008-07-10 2010-01-16 Mobien Corp Resistor device and circuit using the same
FR3140988A1 (fr) * 2022-10-17 2024-04-19 Stmicroelectronics (Rousset) Sas Circuit de protection contre les surchauffes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB960015A (en) * 1960-11-01 1964-06-10 Ericsson Telefon Ab L M Arrangement for temperature dependent control of the output voltage of an energy source
US4020367A (en) * 1975-05-28 1977-04-26 Hitachi, Ltd. Constant-current circuit
GB2136649A (en) * 1980-02-22 1984-09-19 Tokyo Shibaura Electric Co Integrated circuit
US4723108A (en) * 1986-07-16 1988-02-02 Cypress Semiconductor Corporation Reference circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30586A (en) * 1860-11-06 Dooe-lock
US3887863A (en) * 1973-11-28 1975-06-03 Analog Devices Inc Solid-state regulated voltage supply
JPS5913052B2 (ja) * 1975-07-25 1984-03-27 日本電気株式会社 基準電圧源回路
US4263519A (en) * 1979-06-28 1981-04-21 Rca Corporation Bandgap reference
JP2575611B2 (ja) * 1984-11-12 1997-01-29 日本電気株式会社 集積回路化半導体変換器
US4622512A (en) * 1985-02-11 1986-11-11 Analog Devices, Inc. Band-gap reference circuit for use with CMOS IC chips
US4882533A (en) * 1987-08-28 1989-11-21 Unitrode Corporation Linear integrated circuit voltage drop generator having a base-10-emitter voltage independent current source therein
US4883992A (en) * 1988-09-06 1989-11-28 Delco Electronics Corporation Temperature compensated voltage generator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB960015A (en) * 1960-11-01 1964-06-10 Ericsson Telefon Ab L M Arrangement for temperature dependent control of the output voltage of an energy source
US4020367A (en) * 1975-05-28 1977-04-26 Hitachi, Ltd. Constant-current circuit
GB2136649A (en) * 1980-02-22 1984-09-19 Tokyo Shibaura Electric Co Integrated circuit
US4723108A (en) * 1986-07-16 1988-02-02 Cypress Semiconductor Corporation Reference circuit

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
E.D.N. ELECTRICAL DESIGN NEWS vol. 30, no. 22, 3 octobre 1985, NEWTON, MASSACHUSETTS, USA pages 169 - 172; ROLAND LEE: "CURRENT-SOURCE IC COMPENSATES FOR TEMPERATURE ERRORS" *
ELECTRONICS vol. 37, no. 27, 19 octobre 1964, pages 55 - 56; ALLAN K. SCIDMORE: "JUNCTION DIODE REGULATES LOW-VOLTAGE SUPPLY" *
PATENT ABSTRACTS OF JAPAN vol. 10, no. 298 (P-505)(2354) 09 octobre 1986, & JP-A-61 115113 (NEC CORP) 02 juin 1986, *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0495302A2 (de) * 1990-12-28 1992-07-22 Eaton Corporation Integrierte Schaltung mit Analog- und Digitalteilen und thermische Modellierung enthaltend
EP0495302A3 (en) * 1990-12-28 1993-08-04 Westinghouse Electric Corporation Integrated circuit with analog and digital portions and including thermal modeling

Also Published As

Publication number Publication date
JPH02264310A (ja) 1990-10-29
US4952865A (en) 1990-08-28
DE68916774T2 (de) 1994-11-10
EP0376787B1 (de) 1994-07-13
FR2641127B1 (de) 1993-12-24
FR2641127A1 (de) 1990-06-29
DE68916774D1 (de) 1994-08-18

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