EP0376787A1 - Temperature controller for the characteristics of an integrated circuit - Google Patents

Temperature controller for the characteristics of an integrated circuit Download PDF

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Publication number
EP0376787A1
EP0376787A1 EP89403487A EP89403487A EP0376787A1 EP 0376787 A1 EP0376787 A1 EP 0376787A1 EP 89403487 A EP89403487 A EP 89403487A EP 89403487 A EP89403487 A EP 89403487A EP 0376787 A1 EP0376787 A1 EP 0376787A1
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Prior art keywords
temperature
transistors
circuit
voltages
integrated circuit
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EP89403487A
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German (de)
French (fr)
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EP0376787B1 (en
Inventor
Gérard Pataut
Pierre Quentin
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Teledyne e2v Semiconductors SAS
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Thomson Composants Microondes
Thomson SCF Semiconducteurs Specifiques
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • the present invention relates to a device for controlling the temperature of monolithic integrated circuits, more particularly those which are produced on fast materials of group III-V such as GaAs.
  • One of the important parameters for the user is the temperature behavior of the circuits produced on III-V substrates. It must therefore be taken into account by the designer of the circuit, either by providing an accessible control electrode, or by producing on the circuit a device making it possible to correct the variations as a function of the temperature of the characteristic or characteristics of the circuit which must be stabilized. .
  • the methods currently used are all external to the circuit, whether regulating the ambient temperature, or a servo comprising a variable element depending on the temperature, generally correcting a parameter of the circuit with a voltage.
  • the temperature control device associates the control circuit with the circuit to be stabilized, in a single circuit produced in a homogeneous integrated circuit technology, microwave on Gallium Arsenide for example.
  • the manufacture of the two circuits side by side on the same substrate uses the standard stages of the technological process of the integrated circuit sectors.
  • the temperature is detected directly on the substrate and is used to control a correction voltage.
  • This technology must include at least two types of resistive elements, with different temperature coefficients. It is then possible to produce a divider bridge associating these two types of elements, capable of supplying a variable voltage as a function of temperature.
  • the device to be checked must, for its part, present the possibility of compensation for its thermal drifts by a DC voltage, such as, for example, the gate bias voltage to control the gain of a field effect transistor amplifier.
  • the invention relates to a device for controlling the temperature of the characteristics of an integrated circuit, carried by a substrate, characterized in that it comprises, integrated on the same substrate as the circuit to be stabilized, at least one divider bridge formed by two resistors supplied between two voltages, the resistors having different temperature coefficients, and preferably opposite, this bridge delivering at the point common to the two resistors a voltage depending on the temperature, which is used to control the integrated circuit at establish.
  • the measurement sensor of the control device comprises two resistors R1 and R2 mounted as a voltage divider bridge, supplied at its two terminals by external DC voltage generators, stable in temperature, DC1 and DC2; one of these two voltages can be in OV potential of the circuit (ground).
  • the resistors R1 and R2 have different thermal coefficients ⁇ 1 and ⁇ 2.
  • the output voltage Vc1 of the divider bridge is variable according to the temperature, and allows to control the circuit.
  • the choice of the value of DC1 makes it possible to calculate the value of DC2 and the ratio of the resistors R1 and R2.
  • the value of these resistors is determined by the acceptable consumption in the controlled circuit compared to the consumption in the control circuit.
  • the values of the supply voltages DC1 and DC2 can then be used as a posterior adjustment means of the temperature control device.
  • an amplifier can be stabilized by controlling a stage of this amplifier with automatic gain control.
  • a bigrille field effect structure can also be controlled if the control voltage is applied to the second grid.
  • An oscillator can be stabilized in temperature by applying a control voltage to a varactor in the circuit.
  • Other applications may be concerned from the moment when the controlling voltage can be applied to a gate of a transistor or else to a diode.
  • the differential structure of Figure 2 has two parts: a first part which detects temperature variations and a second part which formats the signal intended for controlling the circuit to be controlled in temperature.
  • the temperature variations are detected with a resistance bridge balanced at T0 (20 ° C for example) and which provides a voltage proportional to the temperature as it varies.
  • This bridge is formed on the one hand by the resistors R1 and R2, supplied between DC1 and the ground, and on the other hand the resistors R3 and R4, supplied in the same way.
  • the bridge resistors have opposite temperature coefficients, mounted diagonally.
  • Resistors R1 to R4 have the same value at T0 but opposite temperature coefficients: R1 and R4 have the same coefficient and are made for example of titanium (positive temperature coefficient), while R2 and R3 are made for example of tantalum and have a negative temperature coefficient, opposite to that of R1 and R4. The variations of these resistances, with temperature, are shown in Figure 3.
  • the second part of the device is a differential structure with transistors.
  • the load of the two channels is active and can therefore be adapted to the circuit to be temperature compensated.
  • the transistors T2 and T3 are supplied, through the current source T1, between DC1 and ground: the unbalance voltages at points A and B of the resistance bridge are applied to the gates of T2 and T3.
  • the load transistors T4 and T7 are used to obtain the correct operating point at T0.
  • the transistors T 5 and T6, controlled by the voltages DC3 and DC4, make it possible to control the gain of this differential circuit as a function of the circuit to be stabilized.
  • the output voltages are supplied at points V2 and V3, common to T2 / T5 and T3 / T6 respectively.
  • the voltage V2 applied for example to the gate of a transistor of the circuit to be controlled - which is integrated on the same chip - makes it possible to stabilize it the characteristics if the temperature changes.
  • the simplified differential structure presented on the diagram of principle can be designed more completely so as to obtain a response V2 or V3 linear, parabolic, logarithmic, etc ... according to the circuits to stabilize.
  • the diagrams of these shaping circuits are known art in logic design.
  • the advantage of this new device is its complete compatibility with the stages of production of the microwave channels.
  • the circuit is small and can be installed alongside a transistor or a varactor in the microwave circuit to be stabilized in temperature.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Control Of Temperature (AREA)

Abstract

L'invention concerne la stabilisation en température des caractéristiques d'un circuit intégré. Elle est obtenue en intégrant sur la même pastille de matériau semiconducteur le circuit intégré et un dispositif de contrôle composé d'un capteur comportant au moins deux résistances (R1, R2 et/ou R3, R4) alimentés entre deux tensions (DC1, DC2) utilisé seul ou complété par un circuit de structure différentielle (T2, T3), alimenté par une source de courant (T1), comportant une impédance de charge variable à transistors (T4,T5,T6,T7). Les résistances sont à coefficients de température différents, et la tension de sortie (VA ou VB) du pont est fonction de la température. Le circuit intégré doit comporter un élément (transistor, diode) commandable par une tension. Application à la stabilisation des circuits intégrés.The invention relates to the temperature stabilization of the characteristics of an integrated circuit. It is obtained by integrating on the same chip of semiconductor material the integrated circuit and a control device composed of a sensor comprising at least two resistors (R1, R2 and / or R3, R4) supplied between two voltages (DC1, DC2) used alone or supplemented by a differential structure circuit (T2, T3), supplied by a current source (T1), comprising a variable load impedance with transistors (T4, T5, T6, T7). The resistors have different temperature coefficients, and the output voltage (VA or VB) of the bridge is a function of the temperature. The integrated circuit must include an element (transistor, diode) controllable by a voltage. Application to the stabilization of integrated circuits.

Description

La présente invention concerne un dispositif de contrôle en température des circuits intégrés monolithiques, plus particulièrement ceux qui sont réalisés sur des matériaux rapides du groupe III-V tel que GaAs.The present invention relates to a device for controlling the temperature of monolithic integrated circuits, more particularly those which are produced on fast materials of group III-V such as GaAs.

Le comportement en température des circuits réalisés sur substrats III-V est un des paramètres importants pour l'utilisateur. Il doit donc être pris en compte par le concepteur du circuit, soit en prévoyant une électrode de contrôle accessible, soit en réalisant sur le circuit un dispositif permettant de corriger les variations en fonction de la température de la ou des caractéristiques du circuit devant être stabilisées.One of the important parameters for the user is the temperature behavior of the circuits produced on III-V substrates. It must therefore be taken into account by the designer of the circuit, either by providing an accessible control electrode, or by producing on the circuit a device making it possible to correct the variations as a function of the temperature of the characteristic or characteristics of the circuit which must be stabilized. .

Les méthodes utilisées actuellement sont toutes extérieures au circuit, qu'il s'agisse de régulation de la température ambiante, ou d'un asservissement comportant un élément variable en fonction de la température, corrigeant généralement par une tension un paramètre du circuit.The methods currently used are all external to the circuit, whether regulating the ambient temperature, or a servo comprising a variable element depending on the temperature, generally correcting a parameter of the circuit with a voltage.

Le dispositif de contrôle en température selon l'invention associe le circuit de contrôle au circuit à stabiliser, en un seul circuit réalisé dans une technologie circuit intégré homogène, microonde sur Arséniure de Gallium par exemple. La fabrication des deux circuits côte à côte sur le même substrat utilise les étapes standards du procédé technologique des filières circuits intégrés. La température est détectée directement sur le substrat et sert à contrôler une tension de correction.The temperature control device according to the invention associates the control circuit with the circuit to be stabilized, in a single circuit produced in a homogeneous integrated circuit technology, microwave on Gallium Arsenide for example. The manufacture of the two circuits side by side on the same substrate uses the standard stages of the technological process of the integrated circuit sectors. The temperature is detected directly on the substrate and is used to control a correction voltage.

Cette technologie doit comporter au minimum deux types d'éléments résistifs, à coefficients de température différents. Il est possible alors de réaliser un pont diviseur associant ces deux types d'éléments, capable de fournir une tension variable en fonction de la température. La dispositif à contrôler doit, lui, présenter la possibilité d'une compensation de ses dérives thermiques par une tension continue, comme, par exemple, la tension de polarisation grille pour commander le gain d'un amplificateur à transistors à effet de champ.This technology must include at least two types of resistive elements, with different temperature coefficients. It is then possible to produce a divider bridge associating these two types of elements, capable of supplying a variable voltage as a function of temperature. The device to be checked must, for its part, present the possibility of compensation for its thermal drifts by a DC voltage, such as, for example, the gate bias voltage to control the gain of a field effect transistor amplifier.

De façon plus précise, l'invention concerne un dispositif de contrôle en température des caractéristiques d'un circuit intégré, porté par un substrat, caractérisé en ce qu'il comporte, intégré sur le même substrat que le circuit à stabiliser, au moins un pont diviseur formé par deux résistances alimentées entre deux tensions, les résistances ayant des coefficients de température différents, et de préférence opposés, ce pont délivrant au point commun aux deux résistances une tension fonction de la température, qui est utilisée pour contrôler le circuit intégré à stablliser.More specifically, the invention relates to a device for controlling the temperature of the characteristics of an integrated circuit, carried by a substrate, characterized in that it comprises, integrated on the same substrate as the circuit to be stabilized, at least one divider bridge formed by two resistors supplied between two voltages, the resistors having different temperature coefficients, and preferably opposite, this bridge delivering at the point common to the two resistors a voltage depending on the temperature, which is used to control the integrated circuit at establish.

L'invention sera mieux comprise par la description plus détaillée qui suit maintenant d'un exemple de réalisation, en conjonction avec les figures jointes qui représentent :

  • - figure 1 : schéma électrique du détecteur intégré sur la pastille de circuit intégré,
  • - figure 2 : schéma électrique d'une structure différentielle fournissant des tensions complémentaires fonction de la température,
  • - figure 3 : courbes de résistances en fonction de la température, pour les capteurs de mesure
  • - figure 4 : courbes de réponses de la structure de la figure 2, en fonction de la température.
The invention will be better understood from the more detailed description which now follows of an exemplary embodiment, in conjunction with the attached figures which represent:
  • - Figure 1: electrical diagram of the integrated detector on the integrated circuit chip,
  • - Figure 2: electrical diagram of a differential structure providing additional voltages as a function of temperature,
  • - Figure 3: resistance curves as a function of temperature, for measurement sensors
  • - Figure 4: response curves of the structure of Figure 2, as a function of temperature.

Le capteur de mesure du dispositif de contrôle selon l'invention comprend deux résistances R1 et R2 montées en pont diviseur de tension, alimenté à ses deux bornes par des générateurs extérieurs de tension continue, stables en température, DC1 et DC2; l'une de ces deux tensions peut être en potentiel OV du circuit (masse).The measurement sensor of the control device according to the invention comprises two resistors R1 and R2 mounted as a voltage divider bridge, supplied at its two terminals by external DC voltage generators, stable in temperature, DC1 and DC2; one of these two voltages can be in OV potential of the circuit (ground).

Les résistances R1 et R2 ont des coefficients thermiques différents α 1 et α 2. La variation de résistance en fonction de la température peut s'écrive :
R₁ = [1 + α₁ (T - T₀)] R₁₀
avec
T₀ = 20°C
R₁₀ = R₁ pour T = 20°C
De même :
R₂ = [1 + α₂ (T-T₀)]R₂₀
Pour simplifier les expressions, posons
βT = 1 + α₁ (T-T₀)
γT = 1 + α₂ (T-T₀)The resistors R1 and R2 have different thermal coefficients α 1 and α 2. The variation in resistance as a function of the temperature can be written:
R₁ = [1 + α₁ (T - T₀)] R₁₀
with
T₀ = 20 ° C
R₁₀ = R₁ for T = 20 ° C
Similarly:
R₂ = [1 + α₂ (T-T₀)] R₂₀
To simplify the expressions, let’s pose
β T = 1 + α₁ (T-T₀)
γ T = 1 + α₂ (T-T₀)

La tension de sortie Vc1 du pont diviseur est variable en fonction de la température, et permet de contrôler le circuit.The output voltage Vc1 of the divider bridge is variable according to the temperature, and allows to control the circuit.

Le calcul des résistances du pont diviseur se fait à l'aide des équations suivantes :

Figure imgb0001
Soit un transistor à effet de champ, dont la dérive en température peut être compensée en modifiant sa tension grille de OV (à 80°C) à -0,3 V (à -40°C).
T₁ = - 40°C → VC1 (T₁) = -0,3 V
T₂ = + 80°C → VC1 (T₂) = 0V
On peut écrire :
Figure imgb0002
 The calculation of the resistances of the divider bridge is done using the following equations:
Figure imgb0001
 Or a field effect transistor, whose temperature drift can be compensated by modifying its gate voltage from OV (at 80 ° C) to -0.3 V (at -40 ° C).
T₁ = - 40 ° C → VC1 (T₁) = -0.3 V
T₂ = + 80 ° C → VC1 (T₂) = 0V
We can write :
Figure imgb0002

Le choix de la valeur de DC1 permet de calculer la valeur de DC2 et le rapport des résistances R1 et R2 . La valeur de ces résistances est déterminée par la consommation acceptable dans le circuit contrôlé par rapport à la consommation dans le circuit de commande.The choice of the value of DC1 makes it possible to calculate the value of DC2 and the ratio of the resistors R1 and R2. The value of these resistors is determined by the acceptable consumption in the controlled circuit compared to the consumption in the control circuit.

Les valeurs des tensions d 'alimentation DC1 et DC2 peuvent alors servir de moyens de réglage à postériori du dispositif de contrôle en température.The values of the supply voltages DC1 and DC2 can then be used as a posterior adjustment means of the temperature control device.

Considérons maintenant un dispositif de contrôle complet, capt eur et circuit de mise en forme, de tel structure différentielle que représenté en figure 2 : il est intégré à la même pastille de matériau semiconducteur que le circuit à contrôler en température. La température, détectée directement sur le substrat, sert à contrôler le gain d'une structure différentielle fournissant des tensions complémentaires fonctions de la température.Let us now consider a complete control device, sensor and shaping circuit, of such differential structure as shown in FIG. 2: it is integrated into the same chip of semiconductor material as the circuit to be controlled in temperature. The temperature, detected directly on the substrate, is used to control the gain of a differential structure providing additional voltages which are functions of temperature.

Ainsi, un amplificateur peut être stabilisé en contrôlant un étage de cet amplificateur à contrôle automatique de gain. Une structure à effet de champ bigrille peut aussi être contrôlée si la tension contrôlante est appliquée sur la deuxième grille. Un oscillateur peut être stabilisé en température en appliquant une tension de contrôle sur un varactor du circuit. D'autres applications peuvent être concernées à partir du moment où la tension contrôlante peut être appliquée sur une grille d'un transistor ou bien sur une diode.Thus, an amplifier can be stabilized by controlling a stage of this amplifier with automatic gain control. A bigrille field effect structure can also be controlled if the control voltage is applied to the second grid. An oscillator can be stabilized in temperature by applying a control voltage to a varactor in the circuit. Other applications may be concerned from the moment when the controlling voltage can be applied to a gate of a transistor or else to a diode.

La structure différentielle de la figure 2 comprend deux parties : une première partie qui détecte les variations de température et une seconde partie qui met en forme le signal destiné à la commande du circuit à contrôler en température.The differential structure of Figure 2 has two parts: a first part which detects temperature variations and a second part which formats the signal intended for controlling the circuit to be controlled in temperature.

La détection des variations de température se fait avec un pont de résistances équilibré à T₀ (20° C par exemple) et qui fournit une tension proportionnelle à la température au fur et à mesure qu'elle varie. Ce pont est formé d'une part par les résitances R1 et R2, alimentées entre DC1 et la masse, et d'autre part les résistances R3 et R4, alimentées de la même façon. Les résistances du pont ont des coefficients de température opposés, montées en diagonales.The temperature variations are detected with a resistance bridge balanced at T₀ (20 ° C for example) and which provides a voltage proportional to the temperature as it varies. This bridge is formed on the one hand by the resistors R1 and R2, supplied between DC1 and the ground, and on the other hand the resistors R3 and R4, supplied in the same way. The bridge resistors have opposite temperature coefficients, mounted diagonally.

Les résistances R1 à R4 ont même valeur à T₀ mais des coefficients de température opposés : R1 et R4 ont même coefficient et sont réalisées par exemple en titane (coefficient de température positif), tandis que R2 et R3 sont réalisées par exemple en tantale et ont un coefficient de température négatif, opposé à celui de R1 et R4. Les variations de ces résistances, avec la température, sont représentées en figure 3.Resistors R1 to R4 have the same value at T₀ but opposite temperature coefficients: R1 and R4 have the same coefficient and are made for example of titanium (positive temperature coefficient), while R2 and R3 are made for example of tantalum and have a negative temperature coefficient, opposite to that of R1 and R4. The variations of these resistances, with temperature, are shown in Figure 3.

Dans ce type de pont, les potentiels aux points milieux A et B, égaux à l'équilibre à T₀, se déplacent en sens opposés, ce qui augmente la valeur du signal de sortie.In this type of bridge, the potentials at midpoints A and B, equal to equilibrium at T₀, move in opposite directions, which increases the value of the output signal.

La seconde partie du dispositif est une structure différentielle à transistors. La charge des deux voies est active et peut donc être adaptée au circuit à compenser en température.The second part of the device is a differential structure with transistors. The load of the two channels is active and can therefore be adapted to the circuit to be temperature compensated.

Les transistors T2 et T3 sont alimentés, à travers la source de courant T1, entre DC1 et la masse : les tensions de déséquilibres aux points A et B du pont de résistances sont appliquées sur les grilles de T2 et T3. Les transistors de charge T4 et T7 servent à obtenir le bon point de fonctionnement à T₀. Les transistors T 5 et T6, commandés par les tensions DC3 et DC4, permettent de contrôler le gain de ce circuit différentiel en fonction du circuit à stabiliser. Les tensions de sortie sont délivrées aux points V2 et V3, communs respectivement à T2/T5 et à T3/T6. La tension V2, appliquée par exemple sur la grille d'un transistor du circuit à contrôler - qui est intégré sur la même pastille - permet d'en stabiliser les caractéristiques si la température évolue.The transistors T2 and T3 are supplied, through the current source T1, between DC1 and ground: the unbalance voltages at points A and B of the resistance bridge are applied to the gates of T2 and T3. The load transistors T4 and T7 are used to obtain the correct operating point at T₀. The transistors T 5 and T6, controlled by the voltages DC3 and DC4, make it possible to control the gain of this differential circuit as a function of the circuit to be stabilized. The output voltages are supplied at points V2 and V3, common to T2 / T5 and T3 / T6 respectively. The voltage V2, applied for example to the gate of a transistor of the circuit to be controlled - which is integrated on the same chip - makes it possible to stabilize it the characteristics if the temperature changes.

La réponse du circuit, en fonction de la température, est donnée en figure 4. Las courbes V2 et V3 (trait plein) correspondent à une réponse équilibrée parce que DC3 = DC4. On peut déplacer l'équilibre en faisant varier l'une des tensions DC3 ou DC4, ce qui donne alors, par exemple, la courbe V3 en pointillé : DC3 ≠ DC4.The response of the circuit, as a function of the temperature, is given in FIG. 4. The curves V2 and V3 (solid line) correspond to a balanced response because DC3 = DC4. You can move the balance by varying one of the DC3 or DC4 voltages, which then gives, for example, the dotted curve V3: DC3 ≠ DC4.

La structure différentielle simplifiée présentée sur le schéma de principe peut être conçue plus complétement de manière à obtenir une réponse V2 ou V3 linéaire, parabolique, logarithmique, etc... en fonction des circuits à stabiliser. Les schémas de ces circuits de mise en forme sont de l'art connu en conception logique.The simplified differential structure presented on the diagram of principle can be designed more completely so as to obtain a response V2 or V3 linear, parabolic, logarithmic, etc ... according to the circuits to stabilize. The diagrams of these shaping circuits are known art in logic design.

L'intérêt de ce nouveau dispositif est son entière compatibilité avec les étapes de réalisation des filières microondes. Le circuit est de petite taille et peut être implanté à côté d'un transistor ou d'un varactor dans le circuit microonde à stabiliser en température.The advantage of this new device is its complete compatibility with the stages of production of the microwave channels. The circuit is small and can be installed alongside a transistor or a varactor in the microwave circuit to be stabilized in temperature.

Claims (3)

1 - Dispositif de contrôle en température des caractéristiques d'un circuit intégré, porté par un substrat, caractérisé en ce qu'il comporte, intégré sur le même substrat que le circuit à stabiliser, un pont diviseur formé par quatre résistances (R₁ - R₄), alimenté entre deux tensions stables (DC₁ - DC₂), ces résistances étant deux à deux de coefficients de température opposés, montées en diagonales du pont, et délivrant en leurs points milieux (A,B) deux tensions de contrôle, qui évoluent en sens inverses avec la température.1 - Device for controlling the characteristics of an integrated circuit in temperature, carried by a substrate, characterized in that it comprises, integrated on the same substrate as the circuit to be stabilized, a divider bridge formed by four resistors (R₁ - R₄ ), supplied between two stable voltages (DC₁ - DC₂), these resistors being two by two of opposite temperature coefficients, mounted diagonally from the bridge, and delivering at their midpoints (A, B) two control voltages, which evolve in reverse with temperature. 2 - Dispositif selon la revendication 1, caractérisé en ce qu'il comporte en outre un circuit différentiel de mise en forme des signaux de contrôle, formé par deux premiers transistors (T₂, T₃) et leurs transistors de charges (T₄, T₇), alimentés par les tensions (DC₁, DC₂) d'alimentation du pont de mesure, au moyen d'une source de courant (T₁), les tensions de déséquilibre du pont étant appliquées aux grilles des deux premiers transistors (T₂,T₃) et les tensions de sorties (V₂,V₃) étant recueillies aux points communs entre les premiers transistors (T₂, T₃) et leurs transistors de charges (T₄, T₇).2 - Device according to claim 1, characterized in that it further comprises a differential circuit for shaping the control signals, formed by two first transistors (T₂, T₃) and their charge transistors (T₄, T₇), supplied by the supply voltages (DC₁, DC₂) of the measuring bridge, by means of a current source (T₁), the unbalance voltages of the bridge being applied to the gates of the first two transistors (T₂, T₃) and the output voltages (V₂, V₃) being collected at the points in common between the first transistors (T₂, T₃) and their charge transistors (T₄, T₇). 3 - Dispositif selon la revendication 2, caractérisé en ce que, afin de régler le gain du circuit différentiel en fonction du circuit intégré à stabiliser, il comporte en outre deux transistors de réglage (T₅, T₆) montés en parallèle sur les transistors de charge (T₄, T₇), des tensions de réglage (DC₃, DC₄) étant appliquées sur les grilles des transistors de réglage (T₅, T₆).3 - Device according to claim 2, characterized in that, in order to adjust the gain of the differential circuit as a function of the integrated circuit to be stabilized, it further comprises two adjustment transistors (T₅, T₆) mounted in parallel on the load transistors (T₄, T₇), adjustment voltages (DC₃, DC₄) being applied to the gates of the adjustment transistors (T₅, T₆).
EP89403487A 1988-12-23 1989-12-14 Temperature controller for the characteristics of an integrated circuit Expired - Lifetime EP0376787B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8817091 1988-12-23
FR8817091A FR2641127B1 (en) 1988-12-23 1988-12-23

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EP0376787A1 true EP0376787A1 (en) 1990-07-04
EP0376787B1 EP0376787B1 (en) 1994-07-13

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EP89403487A Expired - Lifetime EP0376787B1 (en) 1988-12-23 1989-12-14 Temperature controller for the characteristics of an integrated circuit

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US (1) US4952865A (en)
EP (1) EP0376787B1 (en)
JP (1) JPH02264310A (en)
DE (1) DE68916774T2 (en)
FR (1) FR2641127B1 (en)

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EP0495302A2 (en) * 1990-12-28 1992-07-22 Eaton Corporation Integrated circuit with analog and digital portions and including thermal modeling

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US5444219A (en) * 1990-09-24 1995-08-22 U.S. Philips Corporation Temperature sensing device and a temperature sensing circuit using such a device
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
US5639163A (en) * 1994-11-14 1997-06-17 International Business Machines Corporation On-chip temperature sensing system
US5946181A (en) * 1997-04-30 1999-08-31 Burr-Brown Corporation Thermal shutdown circuit and method for sensing thermal gradients to extrapolate hot spot temperature
US6437634B1 (en) * 1997-11-27 2002-08-20 Nec Corporation Semiconductor circuit in which distortion caused by change in ambient temperature is compensated
TW200624826A (en) * 2004-10-29 2006-07-16 Koninkl Philips Electronics Nv System for diagnosing impedances having accurate current source and accurate voltage level-shift
SG129370A1 (en) * 2005-08-01 2007-02-26 Marvell World Trade Ltd On-die heating circuit and control loop for rapid heating of the die
US7852098B2 (en) * 2005-08-01 2010-12-14 Marvell World Trade Ltd. On-die heating circuit and control loop for rapid heating of the die
TW201003356A (en) * 2008-07-10 2010-01-16 Mobien Corp Resistor device and circuit using the same
FR3140988A1 (en) * 2022-10-17 2024-04-19 Stmicroelectronics (Rousset) Sas Overheat protection circuit

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EP0495302A3 (en) * 1990-12-28 1993-08-04 Westinghouse Electric Corporation Integrated circuit with analog and digital portions and including thermal modeling

Also Published As

Publication number Publication date
FR2641127B1 (en) 1993-12-24
EP0376787B1 (en) 1994-07-13
JPH02264310A (en) 1990-10-29
US4952865A (en) 1990-08-28
FR2641127A1 (en) 1990-06-29
DE68916774D1 (en) 1994-08-18
DE68916774T2 (en) 1994-11-10

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