EP0354784A2 - Halbleiterspeicheranordnung mit verschiedenen Substrat-Vorspannungsschaltungen - Google Patents
Halbleiterspeicheranordnung mit verschiedenen Substrat-Vorspannungsschaltungen Download PDFInfo
- Publication number
- EP0354784A2 EP0354784A2 EP89308106A EP89308106A EP0354784A2 EP 0354784 A2 EP0354784 A2 EP 0354784A2 EP 89308106 A EP89308106 A EP 89308106A EP 89308106 A EP89308106 A EP 89308106A EP 0354784 A2 EP0354784 A2 EP 0354784A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- biasing
- memory device
- substrate
- biasing circuits
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 abstract description 21
- 238000003860 storage Methods 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000005669 field effect Effects 0.000 description 7
- 239000000306 component Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
Definitions
- This invention relates to a semiconductor memory device and, more particularly, to a biasing circuit for the substrate where the semiconductor memory device is fabricated.
- a practical dynamic random access memory device is implemented by a large number of field effect transistors, storage capacitors as well as other component elements, and these component elements are integrated on a signal semiconductor substrate.
- the field effect transistors and the associated storage capacitors form in combination dynamic memory cells which are arranged in a memory cell array associated with various peripheral circuits.
- Each of the field effect transistors is formed by two p-n junctions spaced apart from each other by a channel forming region, and a gate structure is provided on the channel forming region.
- the p-n junctions define source and drain regions, respectively, and are, by way of example, formed by doping impurity atoms of one conductivity type into a silicon substrate of the opposite conductivity type.
- the p-n junctions should be reversely biased so as to confine the carriers in the source and drain regions, and, for this reason, a biasing circuit is incor porated in the random access memory device.
- the biasing circuit provides an appropriate reverse biasing to the p-n junctions.
- n-channel type field effect transistors are fabricated on the p-type semiconductor substrate, a data bit is stored in the storage capacitor in the form of positive electric charges, and the biasing circuit injects negative charges in the semiconductor substrate.
- each storage capacitor occupies a relatively large amount of area, and a relatively large amount of the positive charges are accumulated in the storage capacitor. Since a relatively small number of the memory cells are fabricated on a small size semiconductor substrate, a small amount of the negative charges appropriately bias the semiconductor substrate to a certain negative voltage level, and, for this reason, the biasing circuit is small in size and capability. In this situation, a relatively wide margin takes place between the effective charges in the storage capacitor and the extinct charges recombined with the injected negative charges, and, accordingly, the data bit is less susceptible to the injected negative charges.
- the ultra large scale integration consumes a large amount of area, and the semiconductor substrate is enlarged in size.
- each of the component field effect transistor as well as the storage capacitor are miniatured so as to allow a large number of the component elements to be integrated thereon.
- a relatively large amount of the negative charges are injected from the biasing circuit into the large semiconductor substrate, however, a relatively small amount of the positive charges are stored in the storage capacitor. Since the injected negative charges are diffused in the semiconductor substrate, the data bit may not be destroyed if stored in the memory cell far from the biasing circuit.
- the data bit is stored in the memory cell in the vicinity of the biasing circuit, the margin between the effective charges and the extinct charges is decreased, and the data bit is much susceptible to the injected negative charges. In other words, the data bit tends to be destroyed by the injected negative charges.
- the present invention proposes to provide a plurality of small biasing circuits straggling over the semiconductor substrate.
- a semiconductor memory device fabricated on a semiconductor substrate, comprising: a) a plurality of memory cells operative to store data bits each in the form of electric charges; and b) peripheral circuits provided in association with the memory cells for writing and reading the data bits and including a biasing unit for supplying the semiconductor substrate with a predetermined biasing voltage, in which the biasing unit has a plurality of biasing circuits located in spacing relationship from one another.
- a random access memory device is fabricated on a silicon substrate 1 relatively small in size, and the silicon substrate 1 has a generally rectangular major surface.
- a biasing unit 2 is constituted by two biasing circuits 3 and 4 which are located at two corners of the left side. However, a memory cell array and other peripheral circuits are formed in the central zone 5 of the major surface, and the other peripheral circuits as well as the biasing unit 2 are provided for supporting writing-in and reading-out operations. Since the biasing unit 2 is constituted by the two biasing circuit 3 and 4, each of the biasing circuits 3 and 4 is relatively small in electron injecting capability.
- each of the biasing circuits 3 and 4 is implemented by a combination of a capacitor C and two diodes D1 and D2, and the capacitor C is coupled at one end thereof to an oscillator 0SC producing an oscillation signal.
- the diode D2 Between the other electrode of the capacitor C and the ground node is coupled to the diode D2 which clamps the other electrode at a certain voltage level higher than the ground voltage level by the forwardly biasing voltage level of the diode D2 of, for example, about 0.1 to 0.3 volt in the presence of the oscillation signal of the positive high voltage level.
- the diode D1 is coupled between the other electrode of the capacitor C and the substrate 1, and is blocked in so far as the oscillation signal remains in the positive high voltage level.
- the memory cell array consists of a plurality of memory cells (only four of which are illustrated and designated by reference numerals 6, 7, 8 and 9 in Fig. 2), and the memory cells are of the one-transistor and one-capacitor type.
- the memory cells 6 to 9 respectively have series combinations of n-channel type field effect transistors 10, 11, 12 and 13 and storage capacitors 14, 15, 16 and 17, and the series combinations are coupled between bit lines 18 and 19 and the silicon substrate 1.
- the other peripheral circuits include a row address decoder circuit 20 associated with word lines 21 to 22 respectively coupled to the n-channel type field effect transistors 6 to 9, a precharging circuit 23, a constant voltage source 24, a control circuit 25, sense amplifier circuits 26, a column address decoder circuit 27, a column selector circuit 28 and an input-and-output buffer circuit 29.
- a row address decoder circuit 20 associated with word lines 21 to 22 respectively coupled to the n-channel type field effect transistors 6 to 9, a precharging circuit 23, a constant voltage source 24, a control circuit 25, sense amplifier circuits 26, a column address decoder circuit 27, a column selector circuit 28 and an input-and-output buffer circuit 29.
- a video random access memory device (which is frequently abbreviated to "VRAM") is fabricated on a relatively large silicon substrate 31, and the silicon substrate 31 has a generally rectangular major surface.
- a biasing unit 32 is constituted by four biasing circuits 33, 34, 35 and 36 which are located at four corners of the major surface.
- the silicon substrate 31 used for the video random access memory device is large enough to form the four biasing circuits.
- the electron density is further equalized over the silicon substrate 31, and, for this reason, a data bit are hardly destroyed by the injected electrons.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63200494A JPH0724298B2 (ja) | 1988-08-10 | 1988-08-10 | 半導体記憶装置 |
JP200494/88 | 1988-08-10 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0354784A2 true EP0354784A2 (de) | 1990-02-14 |
EP0354784A3 EP0354784A3 (de) | 1991-12-11 |
EP0354784B1 EP0354784B1 (de) | 1994-11-02 |
Family
ID=16425255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP89308106A Expired - Lifetime EP0354784B1 (de) | 1988-08-10 | 1989-08-09 | Halbleiterspeicheranordnung mit verschiedenen Substrat-Vorspannungsschaltungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5022005A (de) |
EP (1) | EP0354784B1 (de) |
JP (1) | JPH0724298B2 (de) |
KR (1) | KR940006993B1 (de) |
DE (1) | DE68919155T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469588A2 (de) * | 1990-07-31 | 1992-02-05 | Texas Instruments Incorporated | Verbesserungen in oder in Beziehung zu integrierten Schaltungen |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2626160B2 (ja) * | 1990-04-27 | 1997-07-02 | 日本電気株式会社 | 半導体メモリ |
EP0461313B1 (de) * | 1990-06-12 | 1996-09-18 | Fujitsu Limited | Dynamische Speichereinrichtung mit wahlfreiem Zugriff |
JP2724919B2 (ja) * | 1991-02-05 | 1998-03-09 | 三菱電機株式会社 | 基板バイアス発生装置 |
JPH04255989A (ja) * | 1991-02-07 | 1992-09-10 | Mitsubishi Electric Corp | 半導体記憶装置および内部電圧発生方法 |
JP3313383B2 (ja) * | 1991-06-27 | 2002-08-12 | 日本電気株式会社 | 読み出し専用記憶装置 |
EP0564204A3 (en) * | 1992-03-30 | 1994-09-28 | Mitsubishi Electric Corp | Semiconductor device |
KR950006067Y1 (ko) * | 1992-10-08 | 1995-07-27 | 문정환 | 반도체 메모리 장치 |
US6031411A (en) | 1993-06-28 | 2000-02-29 | Texas Instruments Incorporated | Low power substrate bias circuit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5590139A (en) * | 1978-12-27 | 1980-07-08 | Fujitsu Ltd | Substrate bias generating circuit |
EP0214561A2 (de) * | 1985-08-30 | 1987-03-18 | Kabushiki Kaisha Toshiba | RAM-Speicher |
JPH01278059A (ja) * | 1988-04-28 | 1989-11-08 | Nec Corp | 半導体集積回路装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58114392A (ja) * | 1981-12-07 | 1983-07-07 | Fujitsu Ltd | 半導体記憶装置 |
-
1988
- 1988-08-10 JP JP63200494A patent/JPH0724298B2/ja not_active Expired - Lifetime
-
1989
- 1989-08-09 KR KR1019890011313A patent/KR940006993B1/ko not_active IP Right Cessation
- 1989-08-09 DE DE68919155T patent/DE68919155T2/de not_active Expired - Lifetime
- 1989-08-09 EP EP89308106A patent/EP0354784B1/de not_active Expired - Lifetime
- 1989-08-10 US US07/391,891 patent/US5022005A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5590139A (en) * | 1978-12-27 | 1980-07-08 | Fujitsu Ltd | Substrate bias generating circuit |
EP0214561A2 (de) * | 1985-08-30 | 1987-03-18 | Kabushiki Kaisha Toshiba | RAM-Speicher |
JPH01278059A (ja) * | 1988-04-28 | 1989-11-08 | Nec Corp | 半導体集積回路装置 |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN ; vol. 14, no. 51 (E-881)January 30, 1990 ; & JP-A-1 278 059 (NEC CORP. ) November 8, 1989 * |
PATENT ABSTRACTS OF JAPAN ; vol. 4, no. 137 (E-27)(619) July 8, 1980 ; & JP-A-55 090 139 (FUJITSU K.K ) 08-July 1980 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469588A2 (de) * | 1990-07-31 | 1992-02-05 | Texas Instruments Incorporated | Verbesserungen in oder in Beziehung zu integrierten Schaltungen |
EP0469588A3 (en) * | 1990-07-31 | 1993-04-14 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
Also Published As
Publication number | Publication date |
---|---|
KR900003886A (ko) | 1990-03-27 |
JPH0724298B2 (ja) | 1995-03-15 |
EP0354784A3 (de) | 1991-12-11 |
KR940006993B1 (ko) | 1994-08-03 |
JPH0249461A (ja) | 1990-02-19 |
DE68919155D1 (de) | 1994-12-08 |
US5022005A (en) | 1991-06-04 |
EP0354784B1 (de) | 1994-11-02 |
DE68919155T2 (de) | 1995-06-08 |
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