EP0324953B1 - Hochleistungsstrahler - Google Patents
Hochleistungsstrahler Download PDFInfo
- Publication number
- EP0324953B1 EP0324953B1 EP88121055A EP88121055A EP0324953B1 EP 0324953 B1 EP0324953 B1 EP 0324953B1 EP 88121055 A EP88121055 A EP 88121055A EP 88121055 A EP88121055 A EP 88121055A EP 0324953 B1 EP0324953 B1 EP 0324953B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- dielectric
- discharge chamber
- electrode
- high power
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical group [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052753 mercury Inorganic materials 0.000 claims description 10
- 229910052756 noble gas Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 239000011630 iodine Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052805 deuterium Inorganic materials 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002835 noble gases Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
- H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
- H01J65/046—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel
Definitions
- the invention is based on a high-power radiator with a discharge space filled under filling conditions forming excimers, defined by a first and a second wall, the first wall being formed by a dielectric which directly delimits the discharge space, the dielectric on its side facing away from the discharge space Surface is provided with a first electrode, and the second wall is formed either by a second electrode or by a further dielectric, which is provided with a second electrode on its surface facing away from the discharge space, with a to the said electrodes (6.2 ) connected AC power source.
- the starting point for the present invention is a UV high-power radiator, as described, for example, in the lecture by U.Kogelschatz "New UV and VUV excimer radiators" at the 10th lecture conference of the Society of German Chemists, Photochemistry Group, from November 18-20 Was introduced in Würzburg in 1987.
- This high-performance radiator can be operated with high electrical power densities and high efficiency. Its geometry is widely adaptable to the process in which it is used. In addition to large, flat spotlights, cylindrical ones that radiate inwards or outwards are also possible.
- the discharges can be operated at high pressure (0.1 - 10 bar). With this design, electrical power densities of 1-50 KW / m can be realized. Since the electron energy in the discharge can be largely optimized, the efficiency of such emitters is very high, even if one excites resonance lines of suitable atoms.
- the wavelength of the radiation can be set by the type of fill gas, e.g.
- Mercury (185 nm, 254 nm), nitrogen (337-415 nm), selenium (196, 204.206 nm), arsenic (189, 193 nm), iodine (183 nm), xenon (119, 130, 147 nm), krypton (142 nm). As with other gas discharges, it is also advisable to mix different types of gas.
- the advantage of these emitters is the areal radiation of large radiation outputs with high efficiency. Almost all of the radiation is concentrated in one or a few wavelength ranges. It is important in all cases that the radiation can escape through one of the electrodes.
- This problem can be solved with transparent, electrically conductive layers or else by using a fine-mesh wire mesh or applied conductor tracks as an electrode. which on the one hand ensure the current supply to the dielectric, but on the other hand are largely transparent to the radiation.
- a transparent electrolyte, e.g. H2O are used as a further electrode, which is particularly advantageous for the irradiation of water wastewater, since in this way the radiation generated passes directly into the liquid to be irradiated and this liquid also serves as a coolant.
- the object of the present invention is to modify the generic high-power radiator in such a way that it preferably emits light in the wavelength range from 400 nm to 800 nm, i.e. in the range of visible light. emits.
- the invention is based on the same discharge geometry as that of the UV high-power lamp described in the patent applications mentioned.
- the UV photons generated by excimer radiation in the discharge space cause the layer to fluoresce or phosphoresce upon impact and thus generate visible radiation. With modern phosphors this conversion process into visible light can be very efficient (quantum yield up to 95%).
- the layer is advantageously applied to the inside of the dielectric, because this means that the dielectric itself can only consist of ordinary glass. All difficulties that arise in connection with a UV source with UV-transparent materials do not arise.
- the luminescent layer is protected against the attack of the discharge by a thin UV-transparent layer.
- the desired UV wavelength can be selected with the gas filling.
- excimers can be used as radiating molecules (noble gases, mixtures of noble gases and halogens, mercury, cadmium or zinc) or mixtures of metals with strong resonance lines (mercury, selenium etc.) in very small quantities and noble gases, the mercury-free filling gases being the Preference should be given since this does not create any disposal problems.
- a mercury lamp can be built with properties similar to those on which the conventional fluorescent tube and the new gas discharge lamps are based.
- a quartz or sapphire plate 1 consists essentially of a quartz or sapphire plate 1 and a metal plate 2, which are separated from one another by spacers 3 made of insulating material, and delimit a discharge space 4 with a typical gap width between 1 and 10 mm.
- the outer surface of the quartz plate 1 is covered with a luminescent layer 5, which is followed by a relatively wide-mesh wire network 6, of which only the warp or weft threads are visible.
- This wire mesh 6 and the metal plate 2 form the two electrodes of the radiator.
- the electrical feed is provided by an alternating current source 7 connected to these electrodes.
- a current source use can generally be made of those that have long been used in connection with ozone generators.
- the discharge space 5 is closed on the side in the usual way, was evacuated before closing and filled with an inert gas or a substance which forms excimers under discharge conditions, e.g. Mercury, noble gas, noble gas-metal vapor mixture, noble gas-halogen mixture, filled, optionally using an additional further noble gas (Ar, He, Ne) as a buffer gas.
- an inert gas or a substance which forms excimers under discharge conditions e.g. Mercury, noble gas, noble gas-metal vapor mixture, noble gas-halogen mixture, filled, optionally using an additional further noble gas (Ar, He, Ne) as a buffer gas.
- a substance according to the following table can be used: FILLING GAS RADIATION helium 60-100 nm neon 80 - 90 nm argon 107 - 165 nm xenon 160-190 nm nitrogen 337 - 415 nm krypton 124 nm, 140-160 nm Krypton + fluorine 240 - 255 nm Mercury + argon 235 nm deuterium 150-250 nm Xenon + fluorine 400 - 550 nm Xenon + chlorine 300-320 nm Xenon + iodine 240-260 nm
- noble gas-metal mixtures are also possible, with metals with strong resonance lines being preferred: zinc 213 nm cadmium 228.8 nm mercury 185 nm, 254 nm
- the amount of metal in the gas mixture is very small in relation to the amount of noble gas, so that as little self-absorption as possible occurs.
- the following relationship can serve as a guideline for the upper limit dx P M ⁇ 1333 Pa ⁇ mm (10 Torr ⁇ mm) where d is the gap width of the discharge space in millimeters (typically 1 - 10 mm), P M is the metal vapor pressure.
- the upper limit for the metal vapor is the excimer formation such as HgXe, HgAr, HgKr, for which already 133-2 666 Pa (1 - 20 Torr) Hg in e.g. 40 kPa (300 Torr) noble gas are sufficient. These excimers radiate at 140 - 220 nm and are also very efficient UV lamps. At higher mercury pressure, the Hg2 excimer forms, which radiates at 235 nm.
- the lower limit for the above relationship is about 1.33 Pa ⁇ mm (10 ⁇ Torr ⁇ mm).
- the electron energy distribution can be optimally adjusted by varying the gap width of the discharge space, pressure and / or temperature.
- plate materials such as magnesium fluoride and calcium fluoride can also be used.
- a wire mesh there can also be a transparent, electrically conductive layer, the layer of indium or tin oxide being used for visible light and a 5-10 nm (50-100 angstroms) thick gold layer for visible and UV light.
- the luminescent layer 5 preferably consists of modern phosphors, i.e. phosphor doped with rare earths, which enable a quantum yield of up to 95% (cf. E. Kauer and E. Schnedler “Possibilities and Limits of Light Generation” in "Phys. Bl. 42 (1986), No. 5, p. 128 - 133, especially p. 132).
- the metal electrode 2 itself can be made of UV-reflecting material, e.g. Aluminum or be provided with a UV-reflective layer 8.
- the embodiment according to FIG. 2 differs from that according to FIG. 1 only in the sequence of the layers.
- the luminescent layer 5 is on the surface of the plate 1 facing the discharge space 4 and is preferably protected against the discharge attack by a protective layer 9. It must be UV-transparent and e.g. made of magnesium fluoride (MgF2) or Al2O3. Such layers are applied in a known manner by "sputtering" (ion sputtering).
- the UV-visible light is converted before it passes through the dielectric (plate 1), it can be made of a "normal" translucent material, e.g. GlaS, exist.
- the discharge space 4 is delimited on both sides by plates 4, 10 made of UV-transparent material, for example quartz or sapphire glass. Both outer surfaces are covered with a luminescent layer 5 or 11.
- the electrodes are formed by wire networks 6 and 12, each of which is connected to the alternating current source 7. Analogous to the embodiments according to FIGS. 1 and 2, the wire networks 6, 12 can also be formed by transparent electrically conductive layers, for example made of indium or tin oxide, for visible light and UV a 5-10 nm (50 - 100 angstroms) thick gold layer can be replaced.
- the dielectric i.e. the plates 1, 10 are made of glass.
- FIG. 5 cylindrical high power radiator is shown schematically in cross section.
- a metal tube 14 (inner electrode) is surrounded at a distance (1-10 mm) concentrically by a dielectric tube 15; the outer surface of the tube 15 is provided with a luminescent layer 16. This is followed by an outer electrode in the form of a wire mesh 17.
- the AC power source 7 is connected to both electrodes 14, 17.
- the metal tube 14 is made of aluminum or is provided with an aluminum layer 18 which reflects UV light.
- the luminescent layer 16 is provided on the inner wall of the tube 15 and covered against the discharge space 4 with a protective layer 19 made of MgF2 or Al2O3.
- a cooling medium can be passed through the interior of the tube 14.
- the type and composition of filling gas and luminescent layer correspond to those of the previous exemplary embodiments.
- the invention is particularly suitable for generating visible light.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
- Discharge Lamp (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH152/88A CH675504A5 (enrdf_load_stackoverflow) | 1988-01-15 | 1988-01-15 | |
CH152/88 | 1988-01-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0324953A1 EP0324953A1 (de) | 1989-07-26 |
EP0324953B1 true EP0324953B1 (de) | 1996-03-06 |
Family
ID=4180433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP88121055A Expired - Lifetime EP0324953B1 (de) | 1988-01-15 | 1988-12-16 | Hochleistungsstrahler |
Country Status (6)
Country | Link |
---|---|
US (1) | US4983881A (enrdf_load_stackoverflow) |
EP (1) | EP0324953B1 (enrdf_load_stackoverflow) |
JP (1) | JPH0787093B2 (enrdf_load_stackoverflow) |
CA (1) | CA1310686C (enrdf_load_stackoverflow) |
CH (1) | CH675504A5 (enrdf_load_stackoverflow) |
DE (1) | DE3855074D1 (enrdf_load_stackoverflow) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4010191C2 (de) * | 1990-03-30 | 1994-10-13 | Heidelberger Druckmasch Ag | Strahlereinrichtung zur Trocknung und/oder Härtung von Farb- und/oder Lackschichten auf Druckträgern |
DE4010190A1 (de) * | 1990-03-30 | 1991-10-02 | Asea Brown Boveri | Bestrahlungseinrichtung |
US5062116A (en) * | 1990-05-17 | 1991-10-29 | Potomac Photonics, Inc. | Halogen-compatible high-frequency discharge apparatus |
CH680099A5 (enrdf_load_stackoverflow) * | 1990-05-22 | 1992-06-15 | Asea Brown Boveri | |
DE59009300D1 (de) * | 1990-10-22 | 1995-07-27 | Heraeus Noblelight Gmbh | Hochleistungsstrahler. |
DE59010169D1 (de) * | 1990-12-03 | 1996-04-04 | Heraeus Noblelight Gmbh | Hochleistungsstrahler |
US5220236A (en) * | 1991-02-01 | 1993-06-15 | Hughes Aircraft Company | Geometry enhanced optical output for rf excited fluorescent lights |
DE69210113T2 (de) * | 1991-07-01 | 1996-11-21 | Philips Patentverwaltung | Hochdrucksglimmentladungslampe |
US5319282A (en) * | 1991-12-30 | 1994-06-07 | Winsor Mark D | Planar fluorescent and electroluminescent lamp having one or more chambers |
DE4208376A1 (de) * | 1992-03-16 | 1993-09-23 | Asea Brown Boveri | Hochleistungsstrahler |
DE4235743A1 (de) * | 1992-10-23 | 1994-04-28 | Heraeus Noblelight Gmbh | Hochleistungsstrahler |
DE69409677T3 (de) * | 1993-01-20 | 2001-09-20 | Ushiodenki K.K., Tokio/Tokyo | Entladungslampe mit dielektrischer Sperrschicht |
DE4311197A1 (de) * | 1993-04-05 | 1994-10-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle |
JP2775697B2 (ja) * | 1993-06-25 | 1998-07-16 | ウシオ電機株式会社 | 誘電体バリヤ放電ランプ |
TW348262B (en) * | 1993-09-08 | 1998-12-21 | Ushio Electric Inc | Dielectric barrier discharge lamp |
JP3546610B2 (ja) * | 1996-09-20 | 2004-07-28 | ウシオ電機株式会社 | 誘電体バリア放電装置 |
JPH1125921A (ja) * | 1997-07-04 | 1999-01-29 | Stanley Electric Co Ltd | 蛍光ランプ |
US5903096A (en) * | 1997-09-30 | 1999-05-11 | Winsor Corporation | Photoluminescent lamp with angled pins on internal channel walls |
US5914560A (en) * | 1997-09-30 | 1999-06-22 | Winsor Corporation | Wide illumination range photoluminescent lamp |
US5945790A (en) * | 1997-11-17 | 1999-08-31 | Schaefer; Raymond B. | Surface discharge lamp |
US6015759A (en) * | 1997-12-08 | 2000-01-18 | Quester Technology, Inc. | Surface modification of semiconductors using electromagnetic radiation |
JP3353684B2 (ja) | 1998-01-09 | 2002-12-03 | ウシオ電機株式会社 | 誘電体バリア放電ランプ光源装置 |
US6075320A (en) * | 1998-02-02 | 2000-06-13 | Winsor Corporation | Wide illumination range fluorescent lamp |
US6114809A (en) * | 1998-02-02 | 2000-09-05 | Winsor Corporation | Planar fluorescent lamp with starter and heater circuit |
US6100635A (en) * | 1998-02-02 | 2000-08-08 | Winsor Corporation | Small, high efficiency planar fluorescent lamp |
US6127780A (en) * | 1998-02-02 | 2000-10-03 | Winsor Corporation | Wide illumination range photoluminescent lamp |
US6091192A (en) * | 1998-02-02 | 2000-07-18 | Winsor Corporation | Stress-relieved electroluminescent panel |
US6049086A (en) * | 1998-02-12 | 2000-04-11 | Quester Technology, Inc. | Large area silent discharge excitation radiator |
JP3521731B2 (ja) | 1998-02-13 | 2004-04-19 | ウシオ電機株式会社 | 誘電体バリア放電ランプ光源装置 |
US6416319B1 (en) | 1998-02-13 | 2002-07-09 | Britesmile, Inc. | Tooth whitening device and method of using same |
JP3296284B2 (ja) | 1998-03-12 | 2002-06-24 | ウシオ電機株式会社 | 誘電体バリア放電ランプ光源装置およびその給電装置 |
DE19817480B4 (de) * | 1998-03-20 | 2004-03-25 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Flachstrahlerlampe für dielektrisch behinderte Entladungen mit Abstandshaltern |
DE19817478B4 (de) | 1998-04-20 | 2004-03-18 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Flache Entladungslampe und Verfahren zu ihrer Herstellung |
DE19826809A1 (de) * | 1998-06-16 | 1999-12-23 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Dielektrische Schicht für Entladungslampen und zugehöriges Herstellungsverfahren |
JP3346291B2 (ja) * | 1998-07-31 | 2002-11-18 | ウシオ電機株式会社 | 誘電体バリア放電ランプ、および照射装置 |
DE19919363A1 (de) | 1999-04-28 | 2000-11-09 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Entladungslampe mit Abstandshalter |
DE19919169A1 (de) * | 1999-04-28 | 2000-11-02 | Philips Corp Intellectual Pty | Vorrichtung zur Desinfektion von Wasser mit einer UV-C-Gasentladungslampe |
JP2001015287A (ja) | 1999-04-30 | 2001-01-19 | Ushio Inc | 誘電体バリア放電ランプ光源装置 |
NZ542400A (en) * | 1999-10-08 | 2007-05-31 | Britesmile Professional Inc | Apparatus for simultaneous illumination of teeth |
KR100562879B1 (ko) | 1999-10-18 | 2006-03-24 | 우시오덴키 가부시키가이샤 | 유전체 배리어 방전램프 광원장치 |
JP4884637B2 (ja) | 2000-04-19 | 2012-02-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 高圧放電ランプ |
IES20000339A2 (en) * | 2000-05-05 | 2001-11-14 | G A Apollo Ltd | Apparatus for irradiating material |
DE10026913A1 (de) * | 2000-05-31 | 2001-12-06 | Philips Corp Intellectual Pty | Gasentladungslampe mit Leuchtstoffschicht |
DE10048187A1 (de) * | 2000-09-28 | 2002-04-11 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Entladungslampe für dielektrisch behinderte Entladungen mit Stützelementen zwischen einer Bodenplatte und einer Deckenplatte |
US20020067130A1 (en) * | 2000-12-05 | 2002-06-06 | Zoran Falkenstein | Flat-panel, large-area, dielectric barrier discharge-driven V(UV) light source |
JP2002239484A (ja) * | 2001-02-16 | 2002-08-27 | Ushio Inc | 誘電体バリア放電ランプを使った基板処理装置 |
JP4293409B2 (ja) | 2001-05-25 | 2009-07-08 | ウシオ電機株式会社 | 誘電体バリア放電ランプ点灯装置 |
JP3929265B2 (ja) * | 2001-07-31 | 2007-06-13 | 富士通株式会社 | ガス放電管内への電子放出膜形成方法 |
JP2003144913A (ja) | 2001-11-13 | 2003-05-20 | Ushio Inc | 誘電体バリア放電ランプによる処理装置、および処理方法 |
US6670619B2 (en) * | 2001-12-12 | 2003-12-30 | Alex Waluszko | Transilluminator |
DE10209191A1 (de) * | 2002-03-04 | 2003-09-18 | Philips Intellectual Property | Vorrichtung zur Erzeugung von UV-Strahlung |
EP1490890A1 (en) * | 2002-04-03 | 2004-12-29 | Kye-Seung Lee | Flat type fluorescent lamp |
KR100721067B1 (ko) * | 2002-06-17 | 2007-05-23 | 하리손 도시바 라이팅구 가부시키가이샤 | 저압 방전 램프 및 그 제조 방법 |
DE10235036A1 (de) * | 2002-07-31 | 2004-02-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | UV-Lichtquelle |
FR2843483B1 (fr) * | 2002-08-06 | 2005-07-08 | Saint Gobain | Lampe plane, procede de fabrication et application |
US20070040508A1 (en) * | 2002-12-24 | 2007-02-22 | Delta Optoelectronics, Inc. | Flat fluorescent lamp |
TW574721B (en) * | 2002-12-24 | 2004-02-01 | Delta Optoelectronics Inc | Flat lamp structure |
JP2005005258A (ja) * | 2003-05-19 | 2005-01-06 | Ushio Inc | エキシマランプ発光装置 |
WO2004110932A2 (en) * | 2003-05-27 | 2004-12-23 | Abq Ultraviolet Pollution Solutions, Inc. | Method and apparatus for a high efficiency ultraviolet radiation source |
EP1519406A1 (en) * | 2003-07-31 | 2005-03-30 | Delta Optoelectronics, Inc. | Flat lamp structure |
US7196473B2 (en) * | 2004-05-12 | 2007-03-27 | General Electric Company | Dielectric barrier discharge lamp |
US20060006804A1 (en) * | 2004-07-06 | 2006-01-12 | Lajos Reich | Dielectric barrier discharge lamp |
US7687997B2 (en) * | 2004-07-09 | 2010-03-30 | Koninklijke Philips Electronics N.V. | UVC/VUV dielectric barrier discharge lamp with reflector |
WO2006072893A1 (en) * | 2005-01-07 | 2006-07-13 | Philips Intellectual Property & Standards Gmbh | Dielectric barrier discharge lamp with protective coating |
CN101238548B (zh) * | 2005-01-07 | 2012-05-02 | 皇家飞利浦电子股份有限公司 | 分段的介质阻挡放电灯 |
JP2006236623A (ja) * | 2005-02-22 | 2006-09-07 | Lecip Corp | 誘電体バリア放電管を用いた表示装置 |
JP5103728B2 (ja) * | 2005-11-24 | 2012-12-19 | ウシオ電機株式会社 | 放電ランプ点灯装置 |
FR2915314B1 (fr) * | 2007-04-17 | 2011-04-22 | Saint Gobain | Lampe plane uv a decharges et utilisations. |
US20110148305A1 (en) * | 2008-08-21 | 2011-06-23 | Koninklijke Philips Electronics N.V. | Dielectric barrier discharge lamp |
JP2010177014A (ja) * | 2009-01-29 | 2010-08-12 | Ushio Inc | 超高圧水銀ランプ |
US8164263B2 (en) * | 2009-04-10 | 2012-04-24 | Ushio Denki Kabushiki Kaisha | Excimer discharge lamp |
DE102009025667A1 (de) * | 2009-06-17 | 2010-12-23 | Heraeus Noblelight Gmbh | Lampeneinheit |
CN105070640A (zh) * | 2015-07-30 | 2015-11-18 | 安徽中杰信息科技有限公司 | 真空无极紫外灯的激发方式 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6913956A (enrdf_load_stackoverflow) * | 1968-09-19 | 1970-03-23 | ||
US4266167A (en) * | 1979-11-09 | 1981-05-05 | Gte Laboratories Incorporated | Compact fluorescent light source and method of excitation thereof |
US4778581A (en) * | 1981-12-24 | 1988-10-18 | Gte Laboratories Incorporated | Method of making fluorescent lamp with improved lumen output |
CH670171A5 (enrdf_load_stackoverflow) * | 1986-07-22 | 1989-05-12 | Bbc Brown Boveri & Cie | |
US4851734A (en) * | 1986-11-26 | 1989-07-25 | Hamai Electric Co., Ltd. | Flat fluorescent lamp having transparent electrodes |
-
1988
- 1988-01-15 CH CH152/88A patent/CH675504A5/de not_active IP Right Cessation
- 1988-12-16 DE DE3855074T patent/DE3855074D1/de not_active Expired - Fee Related
- 1988-12-16 EP EP88121055A patent/EP0324953B1/de not_active Expired - Lifetime
-
1989
- 1989-01-10 CA CA000587880A patent/CA1310686C/en not_active Expired - Lifetime
- 1989-01-11 US US07/295,743 patent/US4983881A/en not_active Expired - Fee Related
- 1989-01-17 JP JP1006069A patent/JPH0787093B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA1310686C (en) | 1992-11-24 |
EP0324953A1 (de) | 1989-07-26 |
CH675504A5 (enrdf_load_stackoverflow) | 1990-09-28 |
JPH0787093B2 (ja) | 1995-09-20 |
DE3855074D1 (de) | 1996-04-11 |
US4983881A (en) | 1991-01-08 |
JPH027353A (ja) | 1990-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0324953B1 (de) | Hochleistungsstrahler | |
EP0371304B1 (de) | Hochleistungsstrahler | |
EP0839436B1 (de) | Verfahren zum betreiben eines beleuchtungssystems und dafür geeignetes beleuchtungssystem | |
EP0312732B1 (de) | Hochleistungsstrahler | |
DE69210113T2 (de) | Hochdrucksglimmentladungslampe | |
CH670171A5 (enrdf_load_stackoverflow) | ||
EP0389980B1 (de) | Hochleistungsstrahler | |
DE19636965B4 (de) | Elektrische Strahlungsquelle und Bestrahlungssystem mit dieser Strahlungsquelle | |
DE69228357T2 (de) | Lichtbogenkammer für eine Lampe die eine quecksilberfreie Füllung enthält | |
CH676168A5 (enrdf_load_stackoverflow) | ||
DE2617915A1 (de) | Lichtbogen-entladungseinrichtung | |
EP0517929B1 (de) | Bestrahlungseinrichtung mit einem Hochleistungsstrahler | |
EP0482230A1 (de) | Hochleistungsstrahler | |
DE4433040A1 (de) | Elektrodenlose Entladungslampe hoher Intensität | |
DE2422411A1 (de) | Hochdruckquecksilberdampfentladungslampe | |
DE69012460T2 (de) | Entladungsröhrensystem. | |
DE4036122A1 (de) | Koronaentladungs-lichtquellenzelle | |
DE69019597T2 (de) | Niederdruckedelgasentladungslampe. | |
DE4235743A1 (de) | Hochleistungsstrahler | |
DE19915617A1 (de) | Gasentladungslampe | |
DE4203345A1 (de) | Hochleistungsstrahler | |
DE1489406C3 (de) | Hochdruck-Quecksilberdampf entladungslampe | |
DE4208376A1 (de) | Hochleistungsstrahler | |
DE10242049A1 (de) | Niederdruckgasentladungslampe mit zinnhaltiger Gasfüllung | |
EP0334355B1 (de) | Wandstabilisierte Hochdruck-Entladungslampe |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): CH DE FR GB IT LI NL |
|
17P | Request for examination filed |
Effective date: 19900125 |
|
17Q | First examination report despatched |
Effective date: 19920115 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: HERAEUS NOBLELIGHT GMBH |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): CH DE FR GB IT LI NL |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: NV Representative=s name: KIRKER & CIE SA |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 19960308 |
|
REF | Corresponds to: |
Ref document number: 3855074 Country of ref document: DE Date of ref document: 19960411 |
|
ITF | It: translation for a ep patent filed | ||
ET | Fr: translation filed | ||
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 19961108 Year of fee payment: 9 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 19961213 Year of fee payment: 9 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: CH Payment date: 19961219 Year of fee payment: 9 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 19961230 Year of fee payment: 9 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Effective date: 19970829 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19971216 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19971231 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19971231 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980701 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 19971216 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
NLV4 | Nl: lapsed or anulled due to non-payment of the annual fee |
Effective date: 19980701 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980901 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20051216 |