EP0310183A3 - Procédé pour la fabrication d'un support de masque en SiC, pour la lithographie aux rayons X - Google Patents

Procédé pour la fabrication d'un support de masque en SiC, pour la lithographie aux rayons X Download PDF

Info

Publication number
EP0310183A3
EP0310183A3 EP19880202083 EP88202083A EP0310183A3 EP 0310183 A3 EP0310183 A3 EP 0310183A3 EP 19880202083 EP19880202083 EP 19880202083 EP 88202083 A EP88202083 A EP 88202083A EP 0310183 A3 EP0310183 A3 EP 0310183A3
Authority
EP
European Patent Office
Prior art keywords
sic
wird
single crystal
schicht
silicon single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19880202083
Other languages
German (de)
English (en)
Other versions
EP0310183B1 (fr
EP0310183A2 (fr
Inventor
Angelika Bruns
Margret Harms
Holger Dipl.-Ing. Lüthje
Bernd Dipl.-Ing. Matthiessen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Patentverwaltung GmbH
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH, Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Patentverwaltung GmbH
Publication of EP0310183A2 publication Critical patent/EP0310183A2/fr
Publication of EP0310183A3 publication Critical patent/EP0310183A3/fr
Application granted granted Critical
Publication of EP0310183B1 publication Critical patent/EP0310183B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP88202083A 1987-10-02 1988-09-26 Procédé pour la fabrication d'un support de masque en SiC, pour la lithographie aux rayons X Expired - Lifetime EP0310183B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3733311 1987-10-02
DE19873733311 DE3733311A1 (de) 1987-10-02 1987-10-02 Verfahren zur herstellung eines maskentraegers aus sic fuer roentgenstrahllithographie-masken

Publications (3)

Publication Number Publication Date
EP0310183A2 EP0310183A2 (fr) 1989-04-05
EP0310183A3 true EP0310183A3 (fr) 1991-03-27
EP0310183B1 EP0310183B1 (fr) 1996-01-10

Family

ID=6337456

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88202083A Expired - Lifetime EP0310183B1 (fr) 1987-10-02 1988-09-26 Procédé pour la fabrication d'un support de masque en SiC, pour la lithographie aux rayons X

Country Status (5)

Country Link
US (1) US4941942A (fr)
EP (1) EP0310183B1 (fr)
JP (1) JPH01112728A (fr)
KR (1) KR0136879B1 (fr)
DE (2) DE3733311A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
JP2757939B2 (ja) * 1988-03-08 1998-05-25 富士通株式会社 Ｘ線マスク
DE3841352A1 (de) * 1988-12-08 1990-06-21 Philips Patentverwaltung Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken
JPH02159716A (ja) * 1988-12-14 1990-06-19 Shin Etsu Chem Co Ltd Ｘ線リソグラフィー用ＳｉＣ膜およびその成膜方法
JPH0775219B2 (ja) * 1989-01-18 1995-08-09 富士通株式会社 Ｘ線露光マスクの製造方法
DE3907857C1 (en) * 1989-03-10 1990-05-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Method for preparing a layer of amorphous silicon carbide
US5183531A (en) * 1989-08-11 1993-02-02 Sanyo Electric Co., Ltd. Dry etching method
US5254215A (en) * 1989-08-11 1993-10-19 Sanyo Electric Co., Ltd. Dry etching method
JPH0832591B2 (ja) * 1989-10-11 1996-03-29 日本ピラー工業株式会社 複合材
US5178727A (en) * 1989-12-08 1993-01-12 Toshiba Ceramics Co., Ltd. Ceramic membrane device and a method of producing the same
JPH0715880B2 (ja) * 1989-12-26 1995-02-22 信越化学工業株式会社 Ｘ線リソグラフィー用ＳｉＣ膜、その製造方法およびＸ線リソグラフィー用マスク
US5335256A (en) * 1991-03-18 1994-08-02 Canon Kabushiki Kaisha Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction
JPH0529621A (ja) * 1991-07-19 1993-02-05 Rohm Co Ltd 炭化珪素薄膜回路素子とその製造方法
US5154797A (en) * 1991-08-14 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Silicon shadow mask
US5286524A (en) * 1991-12-13 1994-02-15 General Electric Company Method for producing CVD diamond film substantially free of thermal stress-induced cracks
JP3257645B2 (ja) * 1992-01-22 2002-02-18 東芝セラミックス株式会社 セラミック装置の製造方法
JP3474265B2 (ja) * 1994-07-06 2003-12-08 共進産業株式会社 家具の脚取付構造
WO1996020298A1 (fr) * 1994-12-27 1996-07-04 Siemens Aktiengesellschaft Procede de production de carbure de silicium monocristallin dope avec du bore
WO2007030156A2 (fr) * 2005-04-27 2007-03-15 The Regents Of The University Of California Matrice de materiaux semi-conducteurs pour la detection de neutrons
US8314400B2 (en) * 2005-04-27 2012-11-20 Lawrence Livermore National Security, Llc Method to planarize three-dimensional structures to enable conformal electrodes
US8558188B2 (en) 2005-04-27 2013-10-15 Lawrence Livermore National Security, Llc Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4)
US8829460B2 (en) * 2005-04-27 2014-09-09 Lawrence Livermore National Security, Llc Three-dimensional boron particle loaded thermal neutron detector
JP6753705B2 (ja) * 2016-06-10 2020-09-09 エア・ウォーター株式会社 基板の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2100713A (en) * 1981-06-23 1983-01-06 Atomic Energy Authority Uk Modifying the mechanical properties of silicon carbide
US4608326A (en) * 1984-02-13 1986-08-26 Hewlett-Packard Company Silicon carbide film for X-ray masks and vacuum windows
EP0244496A1 (fr) * 1986-05-06 1987-11-11 Ibm Deutschland Gmbh Masque pour lithographie avec des ions, des électrons ou avec des rayons X et procédé de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658874B2 (ja) * 1986-03-18 1994-08-03 富士通株式会社 Ｘ線マスクの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2100713A (en) * 1981-06-23 1983-01-06 Atomic Energy Authority Uk Modifying the mechanical properties of silicon carbide
US4608326A (en) * 1984-02-13 1986-08-26 Hewlett-Packard Company Silicon carbide film for X-ray masks and vacuum windows
EP0244496A1 (fr) * 1986-05-06 1987-11-11 Ibm Deutschland Gmbh Masque pour lithographie avec des ions, des électrons ou avec des rayons X et procédé de fabrication

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DATABASE WPIL, No 72-35722T, Derwent & JP-B-47 018563 (MATSUSHITA ELECTRIC IND C) 1972 *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 77 (E-589)(2924) 10 März 1988, & JP-A-62 216325 (FUJITSU LTD) 22 September 1987, *
Proceedings of SPIE-The International Society for Optical Engineering, vol 923, p9-15, Electron-Beam, X-Ray and Ion-Beam Technology: Submicrometer Lithographies VII, 2-4 March 1988 Santa Clara, Ca, US; U. MACKENS et al.: "Application of SiC-X-Ray masks for fabricating sub-micron devices". *

Also Published As

Publication number Publication date
US4941942A (en) 1990-07-17
KR890007363A (ko) 1989-06-19
DE3854884D1 (de) 1996-02-22
EP0310183B1 (fr) 1996-01-10
JPH0531290B2 (fr) 1993-05-12
EP0310183A2 (fr) 1989-04-05
KR0136879B1 (ko) 1998-04-29
JPH01112728A (ja) 1989-05-01
DE3733311A1 (de) 1989-04-13

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