EP0304048A2 - A planar type heterostructure avalanche photodiode - Google Patents

A planar type heterostructure avalanche photodiode Download PDF

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Publication number
EP0304048A2
EP0304048A2 EP88113417A EP88113417A EP0304048A2 EP 0304048 A2 EP0304048 A2 EP 0304048A2 EP 88113417 A EP88113417 A EP 88113417A EP 88113417 A EP88113417 A EP 88113417A EP 0304048 A2 EP0304048 A2 EP 0304048A2
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Prior art keywords
forbidden energy
energy gap
avalanche photodiode
planar type
layer
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EP88113417A
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German (de)
French (fr)
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EP0304048B1 (en
EP0304048A3 (en
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Toshitaka C/O Nec Corporation Torikai
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NEC Corp
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NEC Corp
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Priority claimed from JP62206113A external-priority patent/JP2680817B2/en
Priority claimed from JP62206114A external-priority patent/JPS6449284A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the invention relates to a planar type heterostructure avalanche photodiode, and more particularly to a planar type heterostructure avalanche photodiode which is provided with a guard-ring in a multiplication layer.
  • an avalanche photodiode which is fabricated from In 0.53 Ga 0.47 As compound semiconductor has been promoted.
  • Such an avalanche photodiode can be applied to an optical fiber transmission system in which 1 to 1.6 ⁇ m wavelength region is dominantly used to transmit an optical information through an optical fiber with a low transmission loss.
  • the InGaAs semiconductor is lattice-matched to a wide energy gap InP semiconductor, heterostructure comprising with the InGaAs and InP can be obtained.
  • the InGaAs semiconductor is for a light absorption layer
  • the InP layer is for an avalanche multiplication layer into which either electrons or holes generated in the light absorption layer inject to produce the avalanche multiplication.
  • a photo detector can be realized with an excellent receiving sensitivity.
  • a planar type heterostructure avalanche photodiode comprises a heterostructure having first and second semiconductor layers of different forbidden energy gaps wherein the first semiconductor layer is used for a light absorption layer, and the second semiconductor layer is used for an avalanche multiplication layer.
  • the second semiconductor layer a pn junction is selectively provided, and the forbidden energy gap is wider than that of the first semiconductor layer and is increased as a distance is increased from a hetero­interface between the first and second semiconductor layers.
  • FIG. 1 shows a cross-sectional view of the conventional avalanche photodiode which comprises a buffer layer 2 of n-InP, a light absorption layer 3 of n ⁇ -In 0.53 Ga 0.47 As and an n-InP layer 4 successively grown on a substrate 1 of n+-InP, a p+-conduction region 5 formed into the n-InP layer 4 to a predetermined depth to provide a multiplication layer, a guard-ring 8 formed into the n-InP layer 4 to encircle the outer peripheral edge of the p+-conduction region 5, a surface protection film 6 having a function of anti-reflection provided on the n-InP layer 4, a p-­electrode 7 in contact with the p+- conduction region 5 through an
  • a reverse bias voltage is applied across the p and n-electrodes 7 and 9 to extend a depletion layer into the light absorption layer 3 with the narrow forbidden energy gap so that light is absorbed therein thereby transferring only hole carriers generated therein to the pn junction in the n-InP 4 with the large forbidden energy gap to give rise to the avalanche multiplication.
  • a photo-detector with low dark current performance can be obtained, because the dark current due to the tunneling process in the narrow energy gap InGaAs layer is suppressed and a voltage breakdown is occurred in the n-InP layer 4 with the wide forbidden energy gap.
  • the purpose of providing the guard-ring 8 which encircle the outer peripheral edge of the p+-conduction region 5 is to prevents a local voltage breakdown which is liable to occur at the outer peripheral edge so that an uniform avalanche multiplication is obtained in a flat portion 5A of the p+n junction.
  • it is difficult to obtain such a guard ring effect because an edge breakdown is occurred at the outer peripheral edge 8A of the guard-ring 8 when the avalanche gain is approximately less than ten. As shown in Fig.
  • the junction position of the guard-ring 8 is nearer the light absorption layer 3 than that of the p+-conduction region 5, and thus the strength of electric field is greater at the hetero-interface under the guard-ring 8 than at the hetero-interface under the p+-conduction region 5. Therefore, a voltage breakdown in the light absorption layer 3 with the narrow forbidden energy gap deteriorates the guard-ring effect.
  • the influence of the breakdown is strongest on the outer peripheral edge 8A of the guard-ring 8 so that a breakdown is occurred at the outer peripheral edge 8A earlier than at the flat portion 5A of the p+-conduction region 5. This is the aforementioned disadvantage.
  • the planar type heterostructure avalanche photodiode comprises a buffer layer 2 of n-InAlAs having a thickness of approximately 1 ⁇ m, a light absorption layer 3 of n ⁇ -In 0.53 Ga 0.47 As having a thickness of approximately 3 ⁇ m and a carrier density of 3 to 5 x 1015cm ⁇ 3, and a graded forbidden energy gap layer 14 of In 0.53 (Ga 1-x Al x ) 0.47 As having a thickness of 2.5 to 3.0 ⁇ m and a carrier density of 1 to 2 x 1016cm ⁇ 3 in which a forbidden energy gap is graded from 1.0eV to 1.4eV successively grown on a substrate 1 of n+-InP doped with Sulfur.
  • the buffer layer 2 eliminates the dislocation and defect propagation from the substrate to epitaxial layers, and the graded forbidden energy gap layer 14 is for an avalanche multiplication layer and a window layer for light having a wavelength of 1.0 to 1.6 ⁇ m.
  • the graded forbidden energy gap layer 14 a p+ -conduction region 5 having a plane round or oval shape as viewed from above and a guard-ring 8 encircling the outer peripheral edge of the p+-­conduction region 5 are selectively provided.
  • a ring shaped p-electrode 7 is provided to be in contact with the p+-conduction region 5 through an aperture of a surface protection film 6 on the graded forbidden energy gap layer 14, and an n-electrode 9 is formed over the back surface of the substrate 1.
  • the above epitaxial layers 2 to 4 are grown at a temperature of 700°C by metalorganic vapor phase epitaxy.
  • the elements of In, Ga and Al are obtained from organicmetals of tri-methyl-indium (TMI), tri-­ ethyl-gallium (TEG) and tri-methyl aluminum (TMA) respectively.
  • the materials of As and P are made from source gases of arsine (AsH3) and phosphine (PH3) respectively.
  • a mask of a resist film is formed on the wafer surface of the epitaxial layer by the normal light exposure technique, and then Be-ions are implanted into the graded forbidden energy gap layer 14 through the mask under the conditions of 3 to 5 x 1013cm ⁇ 2 dose and an acceleration energy of 100 to 150 kV.
  • the mask is removed from the wafer surface which is then annealed at a temperature of 700°C for 10 to 20 minutes to provide the guard-ring 8 of p-conduction region.
  • a film of SiO2 is deposited on the wafer surface by chemical vapor deposition process to provide the p+-conduction region 5. Then, the SiO2 film is patterned by the normal light exposure process.
  • the surface protection film 6 is of silicon nitride (SiNx) which is deposited on the graded forbidden energy gap layer 14 by plasma enhanced chemical vapor deposition.
  • the p electrode 7 is of a multi-layered film of Ti/Pt/Au which are formed by electron bombardment evaporation.
  • the n-­electrode 9 of a AuGe film is formed by resistive heating evaporation to finish the avalanche photodiode as shown in Fig. 2.
  • the curvature at the peripheral edge of the guard-ring 8 is relieved to some extent.
  • a breakdown voltage of the guard-­ring 8 is heightened by itself.
  • a forbidden energy gap of the layer 14 is increased in its value with a predetermined inclination as the distance is increased from the light absorption layer 3. This results in a cross sectional shape of a relieved curvature in the guard-ring 8 as shown in Fig. 2, as compared to the conventional avalanche photodiode as shown in Fig. 1.
  • the p-conduction region is formed by a mechanism in which the p-type impurities diffuse among the semiconductor composition atoms and a mechanism in which the semiconductor composition atoms are replaced by the p-type impurities wherein the two mechanisms are repeated alternately.
  • the diffusing velocity does not become low. Therefore, the diffusing distance of the p-type impurities is longer in the parallel direction than in the vertical direction.
  • the guard-ring 8 of the p-conduction region having a cross section of a relieved curvature in which the diffusion of the p-type impurities is more expanded transversely is obtained as shown in Fig. 2.
  • planar type heterostructure avalanche photodiode in a second embodiment according to the invention is shown in Fig. 3 wherein like parts are indicated by like reference numerals in Fig. 2.
  • the planar type heterostructure avalanche photodiode in the second embodiment comprises first to third forbidden energy gap layers 14A, 14B and 14C in place of the graded forbidden energy gap layer 14 in Fig. 2.
  • the first forbidden energy gap layer 14A is of In 0.53 Ga 0.4 Al 10.07 As having a forbidden energy gap of 1eV
  • the second forbidden energy gap layer 14B is of In 0.53 Ga 0.23 Al 0.24 As having a forbidden energy gap of 1.2eV
  • the third forbidden energy gap 14C is of In 0.53 Al 0.47 As having a forbidden energy gap of 1.4eV. All of the three layers 14A, 14B and 14°C are the same thickness of 0.7 to 1.0 ⁇ m and the same carrier density of 1 to 2 x 1016cm ⁇ 3.
  • a cross sectional shape of a guard-ring 8 becomes a shape of three different curvature lines which are connected to each other continuously at points crossing two dotted lines for indicating boundary surfaces of the three layers 14A, 14B and 14C, as understood from the aforementioned principle.
  • the so-called guard-ring effect is remarkably improved as compared to the conventional avalanche photodiode. That is to say, a curvature of the guard-rings is higher in Fig. 1 than in Figs. 2 and 3. Consequently, an breakdown voltage difference is equal to or less than only approximately 5V between the portions 5A and 8A in Fig. 1, and the maximum avalanche gain is limited only approximately less than ten for the conventional avalanche photodiode. However, it is expected in the invention that the breakdown voltage difference is increased up to 20 to 30V, and the maximum avalanche gain is more than forty.

Abstract

A planar type heterostructure avalanche photodiode comprises first and second semiconductor layers (3, 14) having first and second forbidden energy gaps. The second forbidden energy gap is larger than the first forbidden energy gap. In the second semiconductor layer, the second forbidden energy gap is increased as a distance is increased from a hetero-interface between the first and second semiconductor layers, and a pn junction is provided. A cross sectional shape of the outer periphery of the pn junction is defined by a curvature dependent on the increase of the second forbidden energy gap.

Description

  • The invention relates to a planar type heterostructure avalanche photodiode, and more particularly to a planar type heterostructure avalanche photodiode which is provided with a guard-ring in a multiplication layer.
  • These days, the development of an avalanche photodiode which is fabricated from In0.53Ga0.47As compound semiconductor has been promoted. Such an avalanche photodiode can be applied to an optical fiber transmission system in which 1 to 1.6 µm wavelength region is dominantly used to transmit an optical information through an optical fiber with a low transmission loss. Since the InGaAs semiconductor is lattice-matched to a wide energy gap InP semiconductor, heterostructure comprising with the InGaAs and InP can be obtained. In the heterostructure, the InGaAs semiconductor is for a light absorption layer, and the InP layer is for an avalanche multiplication layer into which either electrons or holes generated in the light absorption layer inject to produce the avalanche multiplication. Using such separated absorption and nultiplication structure, a photo detector can be realized with an excellent receiving sensitivity.
  • The concept as described above has been described on pages 251 to 253 of "Appl. Phys. Lett. Vol. 35, 1979" by K. Nishida et al. An avalanche photodiode fabricated in accordance with the concept will be explained in detail later.
  • According to the avalanche photodiode, however, there is a disadvantage that it is difficult to provide a guard-ring effect by which an edge breakdown is prevented from being occurred at an outer peripheral edge of a p⁺-conduction region selectively formed in a multiplication layer, although the reason thereof will be also explained later.
  • Accordingly, it is an object of the invention to provide a planar type heterostructure avalanche photodiode in which a guard-ring effect can be obtained without inviting the aforementioned edge breakdown.
  • According to the invention, a planar type heterostructure avalanche photodiode comprises a heterostructure having first and second semiconductor layers of different forbidden energy gaps wherein the first semiconductor layer is used for a light absorption layer, and the second semiconductor layer is used for an avalanche multiplication layer. In the second semiconductor layer, a pn junction is selectively provided, and the forbidden energy gap is wider than that of the first semiconductor layer and is increased as a distance is increased from a hetero­interface between the first and second semiconductor layers.
  • The invention will be explained in more detail in conjunction with appended drawings wherein,
    • Fig. 1 is a conventional planar type heterostructure avalanche photodiode,
    • Fig. 2 is a planar type heterostructure avalanche photodiode in a first embodiment according to the invention, and
    • Fig. 3 is a planar type heterostructure avalanche photodiode in a second embodiment according to the invention.
  • Before describing a planar type heterostructure avalanche photodiode according to the invention, a conventional avalanche photodiode which is fabricated in accordance with the aforementioned concept will be explained. Fig. 1 shows a cross-sectional view of the conventional avalanche photodiode which comprises a buffer layer 2 of n-InP, a light absorption layer 3 of n⁻-In0.53Ga0.47As and an n-InP layer 4 successively grown on a substrate 1 of n⁺-InP, a p⁺-conduction region 5 formed into the n-InP layer 4 to a predetermined depth to provide a multiplication layer, a guard-ring 8 formed into the n-InP layer 4 to encircle the outer peripheral edge of the p⁺-conduction region 5, a surface protection film 6 having a function of anti-reflection provided on the n-InP layer 4, a p-­electrode 7 in contact with the p⁺- conduction region 5 through an aperture of the surface protection film 6, and an n-electrode 9 formed on the back surface of the substrate 1 wherein a forbidden energy gap of the n-InP layer 4 is wider than that of the light absorption layer 3.
  • In the avalanche photodiode, a reverse bias voltage is applied across the p and n- electrodes 7 and 9 to extend a depletion layer into the light absorption layer 3 with the narrow forbidden energy gap so that light is absorbed therein thereby transferring only hole carriers generated therein to the pn junction in the n-InP 4 with the large forbidden energy gap to give rise to the avalanche multiplication. In other words, a photo-detector with low dark current performance can be obtained, because the dark current due to the tunneling process in the narrow energy gap InGaAs layer is suppressed and a voltage breakdown is occurred in the n-InP layer 4 with the wide forbidden energy gap.
  • However, there is the aforementioned disadvantage for the following reason. That is to say, the purpose of providing the guard-ring 8 which encircle the outer peripheral edge of the p⁺-conduction region 5 is to prevents a local voltage breakdown which is liable to occur at the outer peripheral edge so that an uniform avalanche multiplication is obtained in a flat portion 5A of the p⁺n junction. On the contrary, it is difficult to obtain such a guard ring effect because an edge breakdown is occurred at the outer peripheral edge 8A of the guard-ring 8 when the avalanche gain is approximately less than ten. As shown in Fig. 1, the junction position of the guard-ring 8 is nearer the light absorption layer 3 than that of the p⁺-conduction region 5, and thus the strength of electric field is greater at the hetero-interface under the guard-ring 8 than at the hetero-interface under the p⁺-conduction region 5. Therefore, a voltage breakdown in the light absorption layer 3 with the narrow forbidden energy gap deteriorates the guard-ring effect. In more detail, the influence of the breakdown is strongest on the outer peripheral edge 8A of the guard-ring 8 so that a breakdown is occurred at the outer peripheral edge 8A earlier than at the flat portion 5A of the p⁺-conduction region 5. This is the aforementioned disadvantage.
  • Next, a planar type heterostructure avalanche photodiode in a first embodiment according to the invention will be explained in conjunction with Fig. 2. The planar type heterostructure avalanche photodiode comprises a buffer layer 2 of n-InAlAs having a thickness of approximately 1 µm, a light absorption layer 3 of n⁻-In0.53Ga0.47As having a thickness of approximately 3 µm and a carrier density of 3 to 5 x 10¹⁵cm⁻³, and a graded forbidden energy gap layer 14 of In0.53(Ga1-xAlx)0.47As having a thickness of 2.5 to 3.0 µm and a carrier density of 1 to 2 x 10¹⁶cm⁻³ in which a forbidden energy gap is graded from 1.0eV to 1.4eV successively grown on a substrate 1 of n⁺-InP doped with Sulfur. The buffer layer 2 eliminates the dislocation and defect propagation from the substrate to epitaxial layers, and the graded forbidden energy gap layer 14 is for an avalanche multiplication layer and a window layer for light having a wavelength of 1.0 to 1.6 µm. In the graded forbidden energy gap layer 14, a p⁺ -conduction region 5 having a plane round or oval shape as viewed from above and a guard-ring 8 encircling the outer peripheral edge of the p⁺-­conduction region 5 are selectively provided. Further, a ring shaped p-electrode 7 is provided to be in contact with the p⁺-conduction region 5 through an aperture of a surface protection film 6 on the graded forbidden energy gap layer 14, and an n-electrode 9 is formed over the back surface of the substrate 1.
  • The above epitaxial layers 2 to 4 are grown at a temperature of 700°C by metalorganic vapor phase epitaxy. The elements of In, Ga and Al are obtained from organicmetals of tri-methyl-indium (TMI), tri-­ ethyl-gallium (TEG) and tri-methyl aluminum (TMA) respectively. The materials of As and P are made from source gases of arsine (AsH₃) and phosphine (PH₃) respectively. A mask of a resist film is formed on the wafer surface of the epitaxial layer by the normal light exposure technique, and then Be-ions are implanted into the graded forbidden energy gap layer 14 through the mask under the conditions of 3 to 5 x 10¹³cm⁻² dose and an acceleration energy of 100 to 150 kV. After the ion-implantation, the mask is removed from the wafer surface which is then annealed at a temperature of 700°C for 10 to 20 minutes to provide the guard-ring 8 of p-conduction region. At this process, the greater a forbidden energy gap of a semiconductor layer is, the more extensive Be is diffused thereinto so that the guard-ring 8 is of a cross section having a curvature-relieved shape. After the formation of the guard-ring 8, a film of SiO₂ is deposited on the wafer surface by chemical vapor deposition process to provide the p⁺-conduction region 5. Then, the SiO₂ film is patterned by the normal light exposure process. After that, Zn for the p⁺-­conduction region 5 is diffused to the prescribed depth through the patterned SiO₂ film into the graded forbidden energy gap layer 14. The surface protection film 6 is of silicon nitride (SiNx) which is deposited on the graded forbidden energy gap layer 14 by plasma enhanced chemical vapor deposition. The p electrode 7 is of a multi-layered film of Ti/Pt/Au which are formed by electron bombardment evaporation. Finally the n-­electrode 9 of a AuGe film is formed by resistive heating evaporation to finish the avalanche photodiode as shown in Fig. 2.
  • Here, a planar type heterostructure avalanche photodiode according to the invention will be again explained, especially, in its principle.
  • As shown in Fig. 2, the curvature at the peripheral edge of the guard-ring 8 is relieved to some extent. As a result, a breakdown voltage of the guard-­ring 8 is heightened by itself. A forbidden energy gap of the layer 14 is increased in its value with a predetermined inclination as the distance is increased from the light absorption layer 3. This results in a cross sectional shape of a relieved curvature in the guard-ring 8 as shown in Fig. 2, as compared to the conventional avalanche photodiode as shown in Fig. 1. As explained before, in a case where p-type impurities are diffused or ion-implanted into an n-conduction region, the greater a forbidden energy gap of the n-­conduction region is, the more it is difficult that semiconductor composition atoms are replaced by (p-) impurities, in general, for the reason why a bond energy is high among the semiconductor composition atoms. The p-conduction region is formed by a mechanism in which the p-type impurities diffuse among the semiconductor composition atoms and a mechanism in which the semiconductor composition atoms are replaced by the p-type impurities wherein the two mechanisms are repeated alternately. The greater a forbidden energy gap of a semiconductor is, the lower a rate in which impurities are stabilized by substituting for semiconductor composition atoms is, so that the mechanism for the diffusion of the p-type impurities among the semiconductor composition atoms is more dominant than the mechanism for the substitution of the semiconductor composition atoms. That is to say, the greater a forbidden energy gap of a semiconductor is, the more extensive the p-type impurities diffuse into the semiconductor. This phenomenon is applied to the planar type heterostructure avalanche photodiode as shown in Fig. 2. In a case where the p-type impurities diffuses vertically into the layer 14 from the upper surface thereof, a diffusing velocity becomes low gradually as a distance becomes large from the upper surface thereof because the forbidden energy gap becomes low. On the other hand, in a case where the p-­impurities diffuses into the layer 14 in a parallel direction to the upper surface thereof, the diffusing velocity does not become low. Therefore, the diffusing distance of the p-type impurities is longer in the parallel direction than in the vertical direction. As a result, the guard-ring 8 of the p-conduction region having a cross section of a relieved curvature in which the diffusion of the p-type impurities is more expanded transversely is obtained as shown in Fig. 2.
  • Next, a planar type heterostructure avalanche photodiode in a second embodiment according to the invention is shown in Fig. 3 wherein like parts are indicated by like reference numerals in Fig. 2. The difference is that the planar type heterostructure avalanche photodiode in the second embodiment comprises first to third forbidden energy gap layers 14A, 14B and 14C in place of the graded forbidden energy gap layer 14 in Fig. 2. The first forbidden energy gap layer 14A is of In0.53Ga0.4Al10.07As having a forbidden energy gap of 1eV, the second forbidden energy gap layer 14B is of In0.53Ga0.23Al0.24As having a forbidden energy gap of 1.2eV, and the third forbidden energy gap 14C is of In0.53Al0.47As having a forbidden energy gap of 1.4eV. All of the three layers 14A, 14B and 14°C are the same thickness of 0.7 to 1.0 µm and the same carrier density of 1 to 2 x 10¹⁶cm⁻³. As a result, a cross sectional shape of a guard-ring 8 becomes a shape of three different curvature lines which are connected to each other continuously at points crossing two dotted lines for indicating boundary surfaces of the three layers 14A, 14B and 14C, as understood from the aforementioned principle.
  • As apparent from the first and second embodiments, the so-called guard-ring effect is remarkably improved as compared to the conventional avalanche photodiode. That is to say, a curvature of the guard-rings is higher in Fig. 1 than in Figs. 2 and 3. Consequently, an breakdown voltage difference is equal to or less than only approximately 5V between the portions 5A and 8A in Fig. 1, and the maximum avalanche gain is limited only approximately less than ten for the conventional avalanche photodiode. However, it is expected in the invention that the breakdown voltage difference is increased up to 20 to 30V, and the maximum avalanche gain is more than forty.
  • Although the invention has been described with respect to specific embodiment for complete and clear disclosure, the appended claims are not to thus limited but are to be construed as embodying all modification and alternative constructions that may occur to one skilled in the art which fairly fall within the basic teaching herein set forth.

Claims (4)

1. A planar type heterostructure avalanche photodiode comprising,
a first semiconductor layer for a light absorption layer having a first forbidden energy gap,
a second semiconductor layer having a second forbidden energy gap larger than said first forbidden energy gap, said second semiconductor layer including a pn junction selectively formed therein, and
first and second electrodes for applying a predetermined voltage across said first and second semiconductor layers,
wherein said second forbidden energy gap is increased as a distance is increased from a hetero­interface between said first and second semiconductor layers, and
a cross sectional shape of the outer periphery of said pn junction is defined by a curvature which is varied dependent on the increase of said second forbidden energy gap.
2. A planar type heterostructure avalanche photodiode according to claim 1,
wherein said pn junction includes a p⁺n junction provided in accordance with the formation of a p⁺-­conduction region in said second semiconductor layer and a pn junction provided in accordance with the formation of a p-guard-ring for encircling the outer peripheral edge of said p⁺-conduction region in said second semiconductor layer, and said cross sectional shape is a shape of said pn junction of said p-guard-ring.
3. A planar type heterostructure avalanche photodiode according to claim 1 or 2, wherein the increase of said second forbidden energy gap is linear.
4. A planar type heterostructure avalanche photodiode according to claims 1 to 3,
wherein said second semiconductor layer includes a plurality of semiconductor layers having different forbidden energy gaps whereby the increase of said forbidden energy gap is in a stepwise manner.
EP88113417A 1987-08-19 1988-08-18 A planar type heterostructure avalanche photodiode Expired - Lifetime EP0304048B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP206114/87 1987-08-19
JP62206113A JP2680817B2 (en) 1987-08-19 1987-08-19 Method for manufacturing planar heterojunction semiconductor photodetector
JP62206114A JPS6449284A (en) 1987-08-19 1987-08-19 Planar-type heterojunction semiconductor photodetector
JP206113/87 1987-08-19

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EP0304048A2 true EP0304048A2 (en) 1989-02-22
EP0304048A3 EP0304048A3 (en) 1990-05-23
EP0304048B1 EP0304048B1 (en) 1997-05-28

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EP0434218A1 (en) * 1989-11-20 1991-06-26 Fujitsu Limited Semiconductor photodetection device
US5179431A (en) * 1989-11-20 1993-01-12 Fujitsu Limited Semiconductor photodetection device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8817886D0 (en) * 1988-07-27 1988-09-01 British Telecomm Avalanche photodiode structure
JPH02159775A (en) * 1988-12-14 1990-06-19 Toshiba Corp Semiconductor photodetector and manufacture thereof
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EP0304048B1 (en) 1997-05-28
DE3855924T2 (en) 1998-01-29
US4974061A (en) 1990-11-27
DE3855924D1 (en) 1997-07-03
EP0304048A3 (en) 1990-05-23

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