JPS59151475A - Hetero-structure avalanche-photodiode with buffer layer - Google Patents
Hetero-structure avalanche-photodiode with buffer layerInfo
- Publication number
- JPS59151475A JPS59151475A JP58025128A JP2512883A JPS59151475A JP S59151475 A JPS59151475 A JP S59151475A JP 58025128 A JP58025128 A JP 58025128A JP 2512883 A JP2512883 A JP 2512883A JP S59151475 A JPS59151475 A JP S59151475A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buffer layer
- photodiode
- inp
- multiplication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000031700 light absorption Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 9
- 125000005842 heteroatom Chemical group 0.000 abstract description 7
- 230000004888 barrier function Effects 0.000 abstract description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明ぽ光通信装置等゛に用いられる高速、高感度で低
雑音のアバランシ・ホトダイオード（以下ｒ’ＡＰＤＪ
と呼ぶ）の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION A high-speed, high-sensitivity, low-noise avalanche photodiode (hereinafter referred to as r'APDJ) used in photonic communication equipment, etc. of the present invention.
It concerns the structure of
光通信システム等における高速、高感度の光検出□器と
ｔてＡＰＤは極めて優れた性能を有していることは良く
知られている。石英系光ファイ・逆を用いた通信におい
て、伝送損失の少ない１．０〜１．７μｍの波ッ域ア、
よ従来広２用、゛、らｈ−Ｃい木。１結、ヵ、らなるＡ
ＰＤはその感度が低いため使用することかできない。It is well known that APDs have extremely excellent performance as high-speed, high-sensitivity photodetectors in optical communication systems and the like. In communication using quartz-based optical fibers, the wave region of 1.0 to 1.7 μm with low transmission loss,
Conventional wide 2, ゛, ra h-C wood. 1 knot, ka, ranaru A
PD cannot be used because of its low sensitivity.
そこで■−■族化容物半導体結晶を用いて１μ−波長域
に高感度特性を有するＡＰＤの開発が進められつつある
。波長１．０〜１．７μｍ域に感度を有する化合物半導
体として、ＩｎＰと格子整合したＩ ｎＯ，ＨＧａｏ、
４ｙＡ８が注目され検討力゛１なさｉてきている。しか
し。Therefore, progress is being made in the development of APDs having high sensitivity characteristics in the 1 .mu.-wavelength region using ■-■ group compound semiconductor crystals. Compound semiconductors with sensitivity in the wavelength range of 1.0 to 1.7 μm include InO, HGao, which is lattice-matched to InP,
4yA8 is attracting attention and the ability to consider it is decreasing. but.
Ｉ ｎ６．ＩＩｓ Ｇ ａｏ、４ｙ Ａ ｓ結晶内にｐ
−ｎ接合を設けて光を吸収しホトキャリヤを生成する機
能と発生したホトキャリヤを増倍する機能を負わせると
、Ｉ ｎｏ、５ｓＧａ、、、、ｒＡｌｌは禁制帯幅が小
さいため逆方向電圧印加時に空乏層内でのトンネル電流
の成分が大きくなり、低暗電流・高僧倍率を得るのは困
難であることが明らかになつｈｏそこで、上述の欠点を
克服する目的で光吸収領域と増倍領域を分離し、ｐ−ｎ
接合は光吸収層であるＩｎｏｊｓ Ｇａ（Ｌ４？ Ａｓ
に連接する禁制帯幅の大きなＩｎＰ内に設は兎へテ
ロ構造ＡＰＤ（以下ｒＨＡＰＤＪと呼ぶ）が提！された
（特願昭５３−８６１３０号、特願昭５５−１１，２６
７２号参照）。I n6. IIs G ao, 4y A s p in the crystal
When a −n junction is provided to absorb light and generate photocarriers, and to multiply the generated photocarriers, I no, 5sGa,..., rAll has a small forbidden band width, so when reverse voltage is applied, It became clear that the tunnel current component within the depletion layer became large, making it difficult to obtain low dark current and high magnification. Therefore, in order to overcome the above-mentioned drawbacks, we developed a light absorption region and a multiplication region. Separate, p-n
The junction is made of Inojs Ga (L4?As), which is a light absorption layer.
A rabbit heterostructure APD (hereinafter referred to as rHAPDJ) is created in the InP with a large forbidden band connected to the ! (Japanese Patent Application No. 1986-86130, Patent Application No. 11/26/1982)
(See No. 72).
ＨＡＰＤの基本的な一例を第１図（ａｌに示す。図中に
おいて、１１はｎ生型ＩｎＰ基板、１２はｎ型Ｉ ｎ
ｏ、５ｓＧａ６Ａｙ Ａｓ光吸収層、１３は１２と１４
のへテロ界面、１４はｎ型ＩｎＰ増幅層、１５はｐ串型
ＩｎＰ層、１６はｐ−ｎ接合、１７は表面保護膜、１８
．１９は金属電極である。A basic example of HAPD is shown in Figure 1 (al). In the figure, 11 is an n-type InP substrate, 12 is an n-type InP
o, 5sGa6AyAs light absorption layer, 13 is 12 and 14
14 is an n-type InP amplification layer, 15 is a p-type InP layer, 16 is a p-n junction, 17 is a surface protective film, 18
．． 19 is a metal electrode.
ＡＰＤとして動作させるため降伏電圧近傍まで逆方向電
圧を印加したときのバンド構造を模式的に第２図（ｂｌ
Ｋ示す。ｉ中の番号ｉま各々第１図と同様であり、■
は正孔、○は電子；ｈ・は□入射光を示す。□この第２
′図（ｂ）ヤｉ徴的にのはヘテ・界面１３において価電
子帯に不連続ΔＥ・が存在することでする・、。Figure 2 schematically shows the band structure when a reverse voltage is applied close to the breakdown voltage to operate as an APD.
Show K. The numbers in i are the same as in Figure 1, and ■
indicates a hole, ◯ indicates an electron; h• indicates □ incident light. □This second
'The characteristic of Figure (b) is that there is a discontinuity ΔE in the valence band at the interface 13.
このようなＨＡＰＤにおいては、確かＩｃ Ｉｎｏ、ｓ
ｓ Ｇａｏ、マＡｓ内における電界は低下し暗電流は減
少し、大きな増倍率を得ることは可能であるが、他方、
ＡＰＤｋ要求されるもう一つの条件である高速応答特性
を考えた場合、第２図１ｂｌのへテロ界面の影響が問題
となる。実験結果によると（アプライド・フィジックス
・レターズ第４１巻、 ｐ、９５ 、１９８２年参照）
、このへ４テｐ界而に藁積された正孔、が価電子帯のへ
テロ障壁ΔＥｖを乗り越える必要があり、そのため第１
図（ｃｌに示されるように１００ ｎ６の入射光パルス
に対して検出波形に数１００ｎｓの顕著なすそ引きτが
出てくる。このような応答パルスにおけるすそ引きは高
速光通信において誤り率を増大させる大きな要因となる
。In such a HAPD, Ic Ino, s
s Gao, the electric field in As decreases, the dark current decreases, and it is possible to obtain a large multiplication factor, but on the other hand,
When considering high-speed response characteristics, which is another condition required for APDk, the influence of the hetero interface shown in FIG. 2, 1bl, becomes a problem. According to experimental results (see Applied Physics Letters Vol. 41, p. 95, 1982)
, the holes accumulated in this 4-tep world need to overcome the heterobarrier ΔEv of the valence band, so the first
As shown in the figure (cl), for an incident optical pulse of 100 n6, a noticeable trailing τ of several 100 ns appears in the detected waveform. Such trailing in the response pulse increases the error rate in high-speed optical communications. This is a major factor in
木登明番１、低暗電祠・高増倍率特性を有すると向時に
構造としそ適“当がバッファ層を導入することＫより上
述の欠点を克服し高速敲答を可能ならしめたバッファ層
付きへチル構造アバランシ・ホトダイオードを提供する
シのである。 、次に本発明の詳細を第２図に示す
実施例にもと、１でいモ説明する。声１２兜、ＦＣおい
て、２１はｎ生型ＩｎＰ基板、２２はｎ型Ｉｎｎ、５ｓ
Ｇａｏ、４ｙＡｓ、２３は禁制帯幅Ｅ、ｇが０．８ ＜
Ｅｇ＜ ０．９ ｅＶとなる。ｊｎ、−ｕＧａｕＡｓ
ｖＰ、−ｖバッファ層、２４はＥｇが０．９りＫｇ＜１
．ＯｅＶとなるＩｎｔ−ｕ’Ｇａｏ’Ａｓｖ’ Ｐ＋−
ｖ’バッファ層、２５はｎ型ＩｎＰ増幅層、２６はｐ串
型ＩｎＰ層、２７ 、２８ 、２９は各層間の、ヘテロ
界面、３０はｐ−ｎ接合１．３１は表面保護膜、３２．
３３は金属電極である。Kinoto Akiban 1: A buffer that overcomes the above-mentioned drawbacks by introducing a buffer layer and makes high-speed retrieval possible. This invention provides an avalanche photodiode with a layered hetyl structure.Next, the details of the present invention will be explained in detail based on the embodiment shown in FIG. is an n-type InP substrate, 22 is an n-type Inn, 5s
Gao, 4yAs, 23 has forbidden band width E, g is 0.8 <
Eg<0.9 eV. jn, -uGauAs
vP, -v buffer layer, 24 has Eg of 0.9 and Kg<1
．． Int-u'Gao'Asv' P+- which becomes OeV
v' buffer layer, 25 is an n-type InP amplification layer, 26 is a p-type InP layer, 27, 28, 29 are hetero interfaces between each layer, 30 is a p-n junction 1.31 is a surface protective film, 32.
33 is a metal electrode.
また、受光面下において、ｐ−ｎ接合３０とへテロ界面
２９の距離は１〜２μｍ１ 各層の厚さの一例としては
、光吸収層２２が約３μｍ、バッファ層２３． 、２４
が各々約０．５μｍである。キャリヤ濃度は光吸収層２
２が約５ Ｘ １０”ｍ−”、バッファ層２３ 、２４
と１．ｎＰＰ２Ｓ５１〜２ Ｘ １０” ６Ｒ’である
。このプレーナ型バッファ層付きＨＡＰＤは液相成長法
、気相成長法または分子線成長法を用いて２１ 、２２
、２３ 、２４ 、２５の各層を製作し、適当な表面
保護膜３１としてＳｉ３Ｎ４またはＳｉＯ・を付けた後
・２“やＣｄを一択芒散し・電極３２・３３を形成する
ことＫより得ることが可能である。Further, below the light-receiving surface, the distance between the p-n junction 30 and the hetero interface 29 is 1 to 2 μm1. As an example of the thickness of each layer, the light absorption layer 22 is about 3 μm, the buffer layer 23. , 24
are approximately 0.5 μm each. Carrier concentration is light absorption layer 2
2 is approximately 5 x 10"m-", buffer layers 23, 24
and 1. nPP2S51~2 x 10"6R'. This HAPD with a planar buffer layer can be grown using liquid phase growth, vapor phase growth, or molecular beam growth21,22
, 23, 24, and 25, and after attaching Si3N4 or SiO as a suitable surface protection film 31, selectively scattering 2" or Cd, and forming electrodes 32 and 33. Obtained from K. Is possible.
このＨＡＰ Ｄにたとえば元ファイバ、の最低損失域で
ある波長１．５〜１．６μｍの光を入射させ、降伏電圧
近 ５ −
傍まで電圧を印加した場合のバンド構造を第２図（ｂｌ
に示す。ここで、ｈνは入射光、■は正孔、θは電子を
各々示し、図中の番号は各々第２図（ａｔと同様である
。入射寒は光吸収層２２で吸収され、電子−正孔対な発
生させるが、この内圧孔かヘテロ界面２９．２８．２７
を経て増倍領域となる２５に注入される。ヘテロ界面に
おける価電子帯の不連続による正孔に対する障壁の大き
さが第１図（ｂｌにおいてはΔＥ＝０．６ｅＶとなり正
孔が障壁に蓄積されてしまう。しかし、一方、本発明の
一例である第２図（ｂｌにおいてＪ１ＧａＡｓＰバッフ
ァ層２３ 、２４の禁制帯幅をたとえば各々Ｅｇ ＝
０．８５ ｅＶ 、 Ｅｇ ＝ １．ＯｅＶとするとＩ
ｎＰ 、 Ｉｎ６．ｓｓ Ｇａ、、、、Ａｓの禁制帯幅
は各々１．３５ ｅＶ 。The band structure is shown in Figure 2 (bl
Shown below. Here, hν is incident light, ■ is a hole, and θ is an electron, and the numbers in the figure are the same as in Figure 2 (at). A hole pair is generated, but this internal pressure hole or hetero interface 29.28.27
After that, it is injected into the multiplication region 25. The size of the barrier to holes due to the discontinuity of the valence band at the hetero interface is ΔE = 0.6 eV in Figure 1 (bl), and holes are accumulated on the barrier.However, on the other hand, in one example of the present invention In a certain FIG.
0.85 eV, Eg = 1. If OeV is I
nP, In6. The forbidden band widths of ss Ga, ..., and As are each 1.35 eV.
０．７５ｅＶであるのでヘテロ界面２７．２８．２９Ｆ
Ｃおける障壁の大きさはそれぞれ０．１ ｅＶ 、 ０
．１５ ｅＶ 、 ０．３５ｅＶとなり、各障壁におい
て正孔が蓄積される確率は減少することＫなる。なお、
ヘテロ障壁を等分するようにバッファ層の組成を選択す
れば、特に効果が発揮される。本発明に従って、バッフ
ァ層を導入することＫより光吸収層Ｉ ｎｏＪａ Ｇａ
Ｏ，４？ Ａｓと増倍層ＩｎＰ間のへテロ障壁の大き
さを実効的に減少させることが可能となり、実用上十分
な高速応答特性を発揮するＨＡＰＤを得ることができる
。第３図（ｃｌにはこのＨＡＰＤを用いた時の光パルス
応答を模式的に示すが、第１図（ｃｌ Ｋみられたすそ
引きは見られなくなる。Since it is 0.75eV, the hetero interface is 27.28.29F.
The barrier magnitudes at C are 0.1 eV and 0, respectively.
．． 15 eV and 0.35 eV, and the probability that holes are accumulated in each barrier decreases. In addition,
Particular effects can be achieved if the composition of the buffer layer is selected so as to equally divide the heterobarrier. According to the invention, by introducing a buffer layer, the light absorbing layer I noJa Ga
O, 4? It becomes possible to effectively reduce the size of the heterobarrier between As and the multiplication layer InP, and it is possible to obtain a HAPD that exhibits high-speed response characteristics sufficient for practical use. Figure 3 (cl) schematically shows the optical pulse response when this HAPD is used, but the hem pull seen in Figure 1 (cl) is no longer seen.
実際に、ＩｎＰ基板上に液相成長法によりＩｎｏ、１ｓ
Ｇａ６．、、 Ａｓ光吸収層、ＩｎＧａＡｉＰ （Ｅｇ
＝ ０．８ ｅＶ）、ＩｎＧａＡｓＰ （Ｅｇ＝ ０
．９５ ｅＶ）バッファ層、ＩｎＰ増倍層を成長させ、
５ｉ、Ｎ、膜を用いたＺｎの選択拡散たより製作した第
２図（ａｌと同様の構造のＨＡＰＤの高速応答特性を入
射光波長１．５３μｍ１パルス幅２〜１００ｎｓｅｃの
光パルスで調べた結果、パルス応答波形に第１図（ｃｌ
Ｉ／Ｃ示されたようなすそ引きは識別し難い程度であ
った。この実験結果からも、本発明によるＩｎＧａＡｓ
Ｐバッファ層を導入したＩｎＧａＡｓ／ＩｎＰＨＡＰＤ
は低暗電流・高増倍率と同時に高速応答特性を有するこ
とが確認された。In fact, 1 s of Ino was deposited on an InP substrate using the liquid phase growth method.
Ga6. , As light absorption layer, InGaAiP (Eg
= 0.8 eV), InGaAsP (Eg = 0
．． 95 eV) Grow a buffer layer and an InP multiplication layer,
The high-speed response characteristics of a HAPD with a structure similar to that shown in Figure 2 (al) was fabricated using selective diffusion of Zn using a 5i, N, film. The pulse response waveform is shown in Figure 1 (cl
The hem draw as shown in the I/C was difficult to discern. This experimental result also shows that the InGaAs according to the present invention
InGaAs/InPHAPD with P buffer layer introduced
It was confirmed that it has low dark current, high multiplication factor, and fast response characteristics.
本例ではプレーナ型素子構造を示したが、メサ型素子に
おいても、またｐ串型ＩｎＰを基板としてその上に増倍
層、バッファ層、光吸収層を順次成長させた素子構造に
おいても本発明を適用できることは言うまでもない。ま
た、バッファ層は適当な膜厚以内であれば１層でもかま
わない。Ｉ￥ｊＩ／Ｃ液相成長法においては本例で示し
たバッファ層は成長時において問題となるメルトバック
を防止する役目をも同時に担うことができる。Although this example shows a planar type element structure, the present invention can also be applied to a mesa type element or an element structure in which a multiplier layer, a buffer layer, and a light absorption layer are sequentially grown on a p-type InP substrate. Needless to say, it can be applied. Further, the buffer layer may be one layer as long as the thickness is within an appropriate thickness. In the I\jI/C liquid phase growth method, the buffer layer shown in this example can simultaneously play the role of preventing meltback, which is a problem during growth.
以上説明したよ１ｍ％本発明によれば、ＩｎＧａＡｓＰ
バッファ層を導入することｋより低暗電流・高増倍率と
同時に高速応答特性をも有するＩｎＧａＡｓ／ＩｎＰの
ＨＡＰＤを得ることが可能となり、高速光通信などの応
用分野においてその実用的価値は極めて大である。As explained above, according to the present invention, InGaAsP
By introducing a buffer layer, it is possible to obtain an InGaAs/InP HAPD that has low dark current, high multiplication rate, and high-speed response characteristics, and its practical value is extremely high in application fields such as high-speed optical communications. It is.
第１図（ａｌは７５１７７層を持たないＩｎＧａＡｓＰ
ＩｎＰのＨＡＰＤの一例を示す断面図、第１図（ｂｌ
は逆バイアス印加時における素子のバンド構造の模式図
、第１図（ｃｌはこの素子の光パルス応答特性を模式的
に心した図、第２図（ａｌは本発明によるバッファ層を
有するＩｎＧａＡｓ／ＩｎＰのＨＡＰＤの一例を示す断
面図、第２図（ｂｌ 、 （ｃｌはそのバンド構造、お
よび光パルス応答特性をそれぞれ模式的に示した図であ
る。
１１ 、２１− ｎ生型ＩｎＰ基板、 １２ 、２２
− ｎ型Ｉ ｎｏ、５ｓＧａｏ、４ｙＡ’光吸収層、
１３ 、２７ 、２８ 、２９ ・・・ペテロ界面、
１４ 、２５− ｎ型ＩｎＰ増倍層、 １６ 、
３０−・・ｐ−ｎ接合、 １５ 、２６− ｐ’型Ｉｎ
Ｐ層、２３− Ｉｎｌ−ｕＧａｗＡｌｌｖＰｌ−ｗバッ
ファ層、２４ ”自Ｉｎ１−ｕ’Ｇａｕ’Ａｓｖ’ Ｐ
（−ｖ’バｙ ファ層ｓ１７．３１・・・表面保護膜、
１８ 、３２・・・ｐ側金属電極、１９．３３・・
・ｎ側金属電極。
特許出願人 国際電信電話株式会社
代理人大塚 学
外１名
９−
暦 １ 図
も
第 ２ 図
ネ。Figure 1 (al is InGaAsP without 75177 layers)
A cross-sectional view showing an example of InP HAPD, Figure 1 (bl
1 is a schematic diagram of the band structure of the device when a reverse bias is applied; FIG. 1 is a diagram schematically showing the optical pulse response characteristics of this device; FIG. A cross-sectional view showing an example of InP HAPD, FIG. 2 (bl, (cl) are diagrams schematically showing the band structure and optical pulse response characteristics, respectively. , 22
- n-type I no, 5sGao, 4yA' light absorption layer,
13, 27, 28, 29... Peter interface,
14, 25- n-type InP multiplication layer, 16,
30-... p-n junction, 15, 26- p' type In
P layer, 23-Inl-uGawAllvPl-w buffer layer, 24 ``SelfIn1-u'Gau'Asv' P
(-v'by Far layer s17.31... surface protective film,
18, 32... p-side metal electrode, 19.33...
・N-side metal electrode. Patent applicant International Telegraph and Telephone Co., Ltd. Agent Otsuka 1 person from outside the university 9- Calendar 1 Figure is also Figure 2.
Claims (1)
生するＩ ｎｏ、ｕ Ｇ”ｏ、ＨＡｓ光吸収層と前記光
キャリヤを増倍するためｐ−ｎ接合を設けたＩｎＰ増倍
層を備えたベテロ構造アバランシ・ホトダイオードにお
いて、前記光吸収層と前記増倍層との間のへテロ障壁の
大きさが実効的に減少するように前記光吸収層と前記増
倍層の間に半導体バッファ層として禁制帯幅Ｅｇが０８
≦Ｅｇ＜ ’１．ＯｅＶのＩｎ、−、Ｇａ。 ＡｓｙＰｌ−ｖの層を少くとも一層備えていることを特
徴とするバッファ層付きへテロ構造アバランシ・ホトダ
イオード。[Claims] An InP substrate is provided with an I no, u G"o, HAs light absorption layer that absorbs desired light and generates photoexcited carriers, and a p-n junction for multiplying the light carriers. In the beta structure avalanche photodiode with an InP multiplication layer, the light absorption layer and the multiplication layer are arranged such that the size of the heterobarrier between the light absorption layer and the multiplication layer is effectively reduced. The forbidden band width Eg is 08 as a semiconductor buffer layer between
≦Eg<'1. OeV In, -, Ga. A heterostructure avalanche photodiode with a buffer layer, characterized in that it comprises at least one layer of AsyPl-v.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58025128A JPS59151475A (en) | 1983-02-17 | 1983-02-17 | Hetero-structure avalanche-photodiode with buffer layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58025128A JPS59151475A (en) | 1983-02-17 | 1983-02-17 | Hetero-structure avalanche-photodiode with buffer layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59151475A true JPS59151475A (en) | 1984-08-29 |
Family
ID=12157309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58025128A Pending JPS59151475A (en) | 1983-02-17 | 1983-02-17 | Hetero-structure avalanche-photodiode with buffer layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59151475A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2618257A1 (en) * | 1987-07-17 | 1989-01-20 | Rca Inc | PHOTODIODE AT AVALANCHE. |
| JPS6435525A (en) * | 1987-07-31 | 1989-02-06 | Nippon Telegraph & Telephone | Quantum well type optical modulator |
| US4974061A (en) * | 1987-08-19 | 1990-11-27 | Nec Corporation | Planar type heterostructure avalanche photodiode |
| JPH036871A (en) * | 1989-06-02 | 1991-01-14 | Mitsubishi Electric Corp | Photodetecting element |
| FR2721439A1 (en) * | 1994-06-03 | 1995-12-22 | Mitsubishi Electric Corp | Optical semiconductor elements and methods of manufacturing thereof |
-
1983
- 1983-02-17 JP JP58025128A patent/JPS59151475A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2618257A1 (en) * | 1987-07-17 | 1989-01-20 | Rca Inc | PHOTODIODE AT AVALANCHE. |
| JPS6435525A (en) * | 1987-07-31 | 1989-02-06 | Nippon Telegraph & Telephone | Quantum well type optical modulator |
| US4974061A (en) * | 1987-08-19 | 1990-11-27 | Nec Corporation | Planar type heterostructure avalanche photodiode |
| JPH036871A (en) * | 1989-06-02 | 1991-01-14 | Mitsubishi Electric Corp | Photodetecting element |
| FR2721439A1 (en) * | 1994-06-03 | 1995-12-22 | Mitsubishi Electric Corp | Optical semiconductor elements and methods of manufacturing thereof |
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