EP0283681B1 - Galvanisiereinrichtung zur Erzeugung von Höckern auf Chip-Bauelementen - Google Patents

Galvanisiereinrichtung zur Erzeugung von Höckern auf Chip-Bauelementen Download PDF

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Publication number
EP0283681B1
EP0283681B1 EP88101499A EP88101499A EP0283681B1 EP 0283681 B1 EP0283681 B1 EP 0283681B1 EP 88101499 A EP88101499 A EP 88101499A EP 88101499 A EP88101499 A EP 88101499A EP 0283681 B1 EP0283681 B1 EP 0283681B1
Authority
EP
European Patent Office
Prior art keywords
electroplating
anode
electroplating apparatus
wafer holder
leveller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP88101499A
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German (de)
English (en)
French (fr)
Other versions
EP0283681A1 (de
Inventor
Ernst Ing. Andrascek
Hans Ing. Grad. Hadersbeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
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Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0283681A1 publication Critical patent/EP0283681A1/de
Application granted granted Critical
Publication of EP0283681B1 publication Critical patent/EP0283681B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

Definitions

  • the invention relates to a galvanizing device with a galvanic bath, which contains, among other things, a leveler, and the galvanizing device further comprises activated carbon filtering.
  • This device is used to produce finely structured, thick metal deposits on semiconductor wafers.
  • the hump is generally square in shape, with the side edges being 140 ⁇ m, 100 ⁇ m and less in length. Despite the unfavorable starting point, in the middle area of the cusps there are recesses of a maximum of 8 ⁇ m up to the connection pad, the cusp surface should be almost flat.
  • the geometric properties of the system which determine the primary current distribution, should be mentioned first among the factors that determine the scatterability. They include the geometric formulas of the anode, cathode and electrolyte container as well as the arrangement of the electrodes in the electrolyte container and their distance from the vessel walls.
  • the electroplating device for producing finely structured, thick metal deposits on semiconductor wafers must also ensure a reproducible, uniformly good metal deposit for months. In addition, prevent that degradation products that interfere with good metal deposition can accumulate.
  • the invention is based on the object of designing the galvanizing device described at the outset which fulfills the extreme requirements mentioned. All known electroplating devices require at least a flat surface for this.
  • the electroplating device With the electroplating device according to the invention it is possible to produce bumps with an almost flat surface and to achieve a uniform metallization thickness over the entire area of a semiconductor wafer. In addition, this device ensures reproducible, uniformly good metal deposition for months.
  • FIG. 1 denotes an electrolyte container, shown in section, in which a galvanizing cell 2 hangs.
  • An electrolyte container can also hold several electroplating cells.
  • An insulated arrangement feeder has the reference symbol 3, a disk holder 4 and an anode 5. Outside the electrolyte container there is a continuous circulation filter 6, an activated carbon intake container 7 and an activated carbon filter pump unit 8. The power supply is provided by a current / voltage constant 9.
  • the electroplating cell is open at the top and shown with the jacket partially cut open. With 10 an aperture is designated, which is also indicated by dashed lines in Figure 1.
  • Shielding screens or porous disks can be used in the space between the anode and the disk holder, for example for uniform deposition or filtering.
  • anode 11 In the middle of the expanded metal anode 11 there is a dome-shaped elevation 12. In the jacket of the cell, openings 13 are provided at the cathode height for the electrolyte exchange (flow).
  • the disc holder 4 the body of which is identified by 14 in FIG. 3, serves as the upper end of the electroplating cell shown in FIG.
  • the disks 15 are held in the disk holder with two contacting tips 16. 17 denotes the cathode connection and 18 the aperture ring.
  • FIG. 1 comprises the essential elements of the electroplating device, namely the electroplating cell 1, the circulation filter 6 for removing impurities and an activated carbon filter 7/8 that can be activated at any time.
  • the electroplating cell consists of a plastic tube. To generate a good current distribution (macro scattering), the anode surface is designed identically to the lower opening in the plastic tube.
  • the wafer holder 4/14 with the semiconductor wafer 15 and a galvanizing ring aperture 18 covers the upper opening.
  • the ring diaphragm 18 is covered with an insulating varnish as required, whereby the macro scattering can still be optimized.
  • the insoluble titanium expanded metal anode was given the shape shown in FIG. 1 to support good current distribution, for example.
  • the required soluble anode is filled into the expanded metal anode in the form of copper granules or pallets.
  • the electrolyte is continuously pumped through a candle filter (mesh size ⁇ 10 ⁇ m) as a continuous circulation filter. In order to the necessary movement of the electrolyte in the direction of the arrow is guaranteed. However, removal of the degradation products is of greater importance for good metal deposition.
  • a special activated carbon filtering 7/8 is provided for this.
  • Special activated carbon filtering is to be understood to mean that this filtering is carried out using a paper or candle filter impregnated with activated carbon, which adsorbs in particular the low molecular weight constituents.
  • the breakdown products and the leveler are worked out.
  • the wetting agent is retained in the bathroom if the activated carbon filter is selected correctly.
  • the optimization relates to the choice of the right ratio of the daily breakdown products and leveling in relation to the area of the activated carbon filter. For example, 1 liter of electrolyte should be pumped 12 times through a filter area of 1 dm2.
  • the activated carbon filtering is carried out first on each working day, with the degradation products being removed with the leveler.
  • the renewed addition of approx. 0.1 to 0.5 ml / l leveler after the activated carbon filtering in the electrolyte cleaned of degradation products and used levelers is of particular importance for the quality of the metal deposition.
  • the newly added leveler has a very strong effect over a period of about one day. After that the leveling effect diminishes significantly.
  • the specified depressions then form again on the cusp surface in a concave shape ( ⁇ 4 ⁇ m).
  • leveling agent without the special activated carbon filtering no longer brings the strong leveling effect, but completely changes the separation characteristics, so that the opposite effect of leveling occurs.
  • the invention is not restricted to the exemplary embodiment described and illustrated.
  • glossers alone or leveling and glossing can be used Find.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
EP88101499A 1987-02-23 1988-02-02 Galvanisiereinrichtung zur Erzeugung von Höckern auf Chip-Bauelementen Expired - Lifetime EP0283681B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3705727 1987-02-23
DE3705727 1987-02-23

Publications (2)

Publication Number Publication Date
EP0283681A1 EP0283681A1 (de) 1988-09-28
EP0283681B1 true EP0283681B1 (de) 1992-05-06

Family

ID=6321559

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88101499A Expired - Lifetime EP0283681B1 (de) 1987-02-23 1988-02-02 Galvanisiereinrichtung zur Erzeugung von Höckern auf Chip-Bauelementen

Country Status (4)

Country Link
US (1) US4906346A (enrdf_load_stackoverflow)
EP (1) EP0283681B1 (enrdf_load_stackoverflow)
JP (1) JPS63216998A (enrdf_load_stackoverflow)
DE (1) DE3870685D1 (enrdf_load_stackoverflow)

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US5312532A (en) * 1993-01-15 1994-05-17 International Business Machines Corporation Multi-compartment eletroplating system
US6358388B1 (en) * 1996-07-15 2002-03-19 Semitool, Inc. Plating system workpiece support having workpiece-engaging electrodes with distal contact-part and dielectric cover
US6159354A (en) * 1997-11-13 2000-12-12 Novellus Systems, Inc. Electric potential shaping method for electroplating
US6027631A (en) * 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6156167A (en) * 1997-11-13 2000-12-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating semiconductor wafers
US6179983B1 (en) 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
US6126798A (en) * 1997-11-13 2000-10-03 Novellus Systems, Inc. Electroplating anode including membrane partition system and method of preventing passivation of same
US6919010B1 (en) 2001-06-28 2005-07-19 Novellus Systems, Inc. Uniform electroplating of thin metal seeded wafers using rotationally asymmetric variable anode correction
WO2000046593A2 (en) * 1999-02-08 2000-08-10 Analatom Incorporated A micro-electronic bond degradation sensor and method of manufacture
US6585876B2 (en) * 1999-04-08 2003-07-01 Applied Materials Inc. Flow diffuser to be used in electro-chemical plating system and method
US6409903B1 (en) 1999-12-21 2002-06-25 International Business Machines Corporation Multi-step potentiostatic/galvanostatic plating control
US8475636B2 (en) * 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US8308931B2 (en) * 2006-08-16 2012-11-13 Novellus Systems, Inc. Method and apparatus for electroplating
US7622024B1 (en) 2000-05-10 2009-11-24 Novellus Systems, Inc. High resistance ionic current source
US6527920B1 (en) 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US6821407B1 (en) 2000-05-10 2004-11-23 Novellus Systems, Inc. Anode and anode chamber for copper electroplating
US6576110B2 (en) * 2000-07-07 2003-06-10 Applied Materials, Inc. Coated anode apparatus and associated method
US7682498B1 (en) 2001-06-28 2010-03-23 Novellus Systems, Inc. Rotationally asymmetric variable electrode correction
TWI240766B (en) * 2003-09-09 2005-10-01 Ind Tech Res Inst Electroplating device having rectification and voltage detection function
US8623193B1 (en) 2004-06-16 2014-01-07 Novellus Systems, Inc. Method of electroplating using a high resistance ionic current source
JP2006348373A (ja) 2005-06-20 2006-12-28 Yamamoto Mekki Shikenki:Kk 電気めっき用治具
US7799684B1 (en) 2007-03-05 2010-09-21 Novellus Systems, Inc. Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers
US8513124B1 (en) 2008-03-06 2013-08-20 Novellus Systems, Inc. Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers
US8703615B1 (en) 2008-03-06 2014-04-22 Novellus Systems, Inc. Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers
US7964506B1 (en) 2008-03-06 2011-06-21 Novellus Systems, Inc. Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers
US20110017604A1 (en) * 2008-04-23 2011-01-27 Atomic Energy Council - Institute Of Nuclear Energy Research Method for making semiconductor electrodes
US20120261254A1 (en) 2011-04-15 2012-10-18 Reid Jonathan D Method and apparatus for filling interconnect structures
US8475637B2 (en) * 2008-12-17 2013-07-02 Novellus Systems, Inc. Electroplating apparatus with vented electrolyte manifold
US8262871B1 (en) 2008-12-19 2012-09-11 Novellus Systems, Inc. Plating method and apparatus with multiple internally irrigated chambers
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US8795480B2 (en) 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
TWI410532B (zh) * 2010-09-01 2013-10-01 Grand Plastic Technology Co Ltd 晶圓填孔垂直式電極電鍍設備
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
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US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
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US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
CN106435695A (zh) * 2016-08-24 2017-02-22 谢彪 电镀设备及电镀方法
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating

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Also Published As

Publication number Publication date
JPS63216998A (ja) 1988-09-09
US4906346A (en) 1990-03-06
JPH044399B2 (enrdf_load_stackoverflow) 1992-01-28
EP0283681A1 (de) 1988-09-28
DE3870685D1 (de) 1992-06-11

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