Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L23/53204—Conductive materials
  • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
  • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L23/5329—Insulating materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
  • H01L23/64—Impedance arrangements
  • H01L23/647—Resistive arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
  • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
  • H10D84/131—Thyristors having built-in components
  • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01005—Boron [B]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01013—Aluminum [Al]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01014—Silicon [Si]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01015—Phosphorus [P]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/0102—Calcium [Ca]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01024—Chromium [Cr]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/0103—Zinc [Zn]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01042—Molybdenum [Mo]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01047—Silver [Ag]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01068—Erbium [Er]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01082—Lead [Pb]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/12—Passive devices, e.g. 2 terminal devices
  • H01L2924/1203—Rectifying Diode
  • H01L2924/12036—PN diode
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1301—Thyristor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
  • H01L2924/1901—Structure
  • H01L2924/1904—Component type
  • H01L2924/19043—Component type being a resistor

Definitions

• the invention relates to a semiconductor component with a semiconductor body, which has undergone a sequence of layer-shaped zones with at least two intermediate pn-u and in at least one of the two outer zones forming the emitter zone has a structure in which sections of the emitter zone and intermediate parts of the adjacent base zone form a common surface, and on the base zone parts with a first metallization and on the emitter zone sections with a second metallization, over which a continuous contact plate is attached.
• Electrode structures with interlocking sections of electrodes with different poles are known. These require special measures to avoid short circuits. As the dimensions of the electrode sections become smaller, ie with increasing subdivision, the fine structuring becomes denser and the demands on the process technology and on the devices for producing such arrangements increase.
• Each strip-shaped section of the emitter metallization is covered over the entire area with a region of the contact piece, e.g. a Mo lybdenum blank, directly connected.
• a region of the contact piece e.g. a Mo lybdenum blank
• the object of the invention is to achieve a cohesive connection of the structured electrode with a contact plate in the case of switchable semiconductor components with a structured electrode in a simpler manner than known designs, and to improve the switch-off behavior by creating a metallization of the emitter zone sections of the electrode, in which these sections are connected to current conductor parts via defined resistors.
• the object is achieved in a semiconductor device of the type mentioned in the characterizing features of the main claim.
• the figure shows in cross section a disk-shaped semiconductor body of a GTO thyristor and the substance-wrong arrangement of a contact plate on the semiconductor body.
• the semiconductor body (I) consisting of a high-resistance, n-conducting central zone (1), an adjoining p-conducting zone (2, 3) and the emitter zone sections (4) embedded in the control base zone (2), shows this usual structure for a switchable semiconductor rectifier element.
• the two functional areas namely the control current area and the load current area, are each divided into strips, alternately arranged in succession and together form the one of the two main surfaces of the semiconductor body (I).
• Each strip-shaped part of the control current range, i.e. the base zone part (2a) lying between two adjacent emitter zone sections (4) is provided with a metallization (6).
• This base zone metallization (6) is covered with a first insulating layer (7), which is designed for a perfect covering of the base zone metallization (6) which is subjected to the contact pressure when the structure is contacted with pressure.
• the first insulating layer (7) overlaps that between the base zone part (2a) and
• Emitter zone section (4) pn transition emerging on the surface 4.
• the free surfaces of the emitter zone sections (4), except for the locations for connection conductor parts, and the first insulating layer (7) are covered together with a continuous second metal layer, referred to as the emitter metallization (8).
• the coating of the semiconductor surface made of contact metal and insulating material is in each case stepped.
• the tabular attachments (8c) of the emitter metallization (8) lying above the base zone parts (2a) form the contact surface for the integral connection of the metallization (8) to a flat contact plate (12), for example made of molybdenum.
• any structuring of an electrode of the semiconductor body can be achieved in a particularly simple manner in the case of components of the type mentioned at the outset, regardless of the dimensioning of the functional areas.
• the emitter metallization (8) is provided between the line of symmetry of each attachment (8c) and the line of symmetry of an adjacent emitter zone section (4) as a defined current path. For this purpose, it is covered against a metallic intermediate layer (11) arranged above it by a coherent second insulating layer (9). When the component is switched off, a voltage drop occurs at this defined current path, which is also determined by the material and the dimensioning of the emitter metallization (8). When using the Ha Ib conductor component under nominal load, it is at least 10 mV.
• This second insulating layer (9) has an opening (10) on each attachment (8c) as a contact window for connecting the emitter metallization (8) to a contact plate (12).
• the transverse resistance formed by the electrically insulated arrangement of the emitter metallization (8) therein between a contact point for the contact plate (12) and the line of symmetry of one of the adjacent emitter zones sections (4) is composed of the partial resistors R 1 and R 2 .
• the partial resistance R 1 arises when the semiconductor component is used in the section of the emitter metallization (8) between the edge of the second insulating layer (9) on the attachment (8c) and the edge of the first insulating layer (7) on the emitter zone section (4).
• the partial resistance R 2 results from the further section of the emitter metallization (8) in the subsequent current path up to the line of symmetry of this emitter zone section.
• the metallic contact layer (11) is applied to the second insulating layer (9) and is only galvanically connected to the emitter metallization (8) in the openings (10).
• the cohesive contacting of the emitter metallization (8) with the contact plate (12) is produced by connecting the latter over the entire area to the contact layer (11).
• the inorganic compounds of the material of the semiconductor body such as SiO, SiO 2 , Si 3 N 4 and glasses based on silicate, for example zinc borosilicate glass, are suitable as the material of the first insulating layer (7).
• Aluminum oxide Al 2 O 3 is also suitable.
• this first insulating layer (7) should be at least 0.1 ⁇ m and is preferably 0.5 to 30 ⁇ m.
• Aluminum or a layer sequence of the metals aluminum, chromium, nickel, silver can be provided as the material for the base zone metallization (6). This fulfills the requirement that this metallic coating of the base zone parts (2a) must have a high electrical conductivity in order to keep the lateral voltage drops occurring therein as small as possible.
• Chromium-nickel alloys with a proportion of nickel in the range from 35 to 60 percent by weight are preferably provided.
• Favorable results were achieved with a chromium-nickel alloy with 40 percent by weight nickel, the rest chromium.
• the material of the emitter metallization (8) can also contain silicon oxide.
• the metallizations (6, 8) can e.g. generated by vapor deposition or sputtering and then firmly connected to the underlying material in a subsequent temperature step.
• the distance between the base zone metallization ( ⁇ ) and the emitter zone section (4) is at least 5 ⁇ m and can be up to 500 ⁇ m.
• the width of the emitter zone sections (4) is 200 ⁇ m
• the distance between the planes of symmetry of these sections is 200 ⁇ m
• the thickness of the base zone metallization is 8 ⁇ m
• the base zone metallization consists of aluminum, the emitter metallization of a nickel / chrome alloy with, for example, 45 weight percent nickel.
• the insulating layers (7, 9) consist of silicon nitride Si 3 N 4 .
• a lead solder is provided as the material for the contact layer (11).
• the thickness of the contact layer (11) between the respective attachment (8c) and the contact plate (12) is 3 to 5 ⁇ m.
• the switchable anode current of a GTO thyristor with the above-mentioned typical construction is approx. 50% higher than that of known designs.
• a pnp layer sequence (1, 2, 3) is produced in a pretreated large-area, preferably n-type semiconductor output wafer by doping on both sides.
• the pattern of the emitter zone sections (4) is then produced using a masking process.
• the base zone parts (2a) are then provided with a metallization (6) with the aid of a further masking.
• the entire surface is then covered with a first insulating layer (7) e.g. covered with silicon nitride.
• all emitter zone sections are exposed to such an extent that the remaining first insulating layer (7) still covers the gate transition between a base zone part (2a) and the adjacent emitter zone section (4).
• the emitter metallization (8) is covered with a second insulating layer (9) made of the same material as the first insulating layer (7).
• a second insulating layer (9) made of the same material as the first insulating layer (7).
• an opening (10) is formed in the second insulating layer (9) in the region of each free surface (8c), in which the metallization (8) appears on the surface.
• the surface formed from the second insulating layer (9) and from the emitter metallization (8) exposed in the openings (10) provided therein is coated with a solder metal.
• the depressions existing between the surfaces (8c) and produced by the step-like structure of the individual layers are also compensated.
• the contact plate (12) is firmly arranged on this solder metal coating by soldering. For this purpose the surface is soft-solderable.

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Thyristors (AREA)
• Die Bonding (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=6300786

Family Applications (1)

Country Status (4)

Families Citing this family (4)

Family Cites Families (5)

• 1986
  • 1986-05-14 DE DE19863616185 patent/DE3616185A1/de active Granted
• 1987
  • 1987-05-13 EP EP87902438A patent/EP0275261A1/de not_active Withdrawn
  • 1987-05-13 JP JP62502901A patent/JPH01501027A/ja active Pending
  • 1987-05-13 WO PCT/DE1987/000222 patent/WO1987007081A1/de not_active Application Discontinuation

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events