EP0151585A4 - Shallow-junction semiconductor devices. - Google Patents
Shallow-junction semiconductor devices.Info
- Publication number
- EP0151585A4 EP0151585A4 EP19840902405 EP84902405A EP0151585A4 EP 0151585 A4 EP0151585 A4 EP 0151585A4 EP 19840902405 EP19840902405 EP 19840902405 EP 84902405 A EP84902405 A EP 84902405A EP 0151585 A4 EP0151585 A4 EP 0151585A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- species
- neutral
- depth
- junction
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000007935 neutral effect Effects 0.000 claims abstract description 20
- 238000000137 annealing Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 abstract description 18
- 239000002019 doping agent Substances 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005247 gettering Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- KKEBXNMGHUCPEZ-UHFFFAOYSA-N 4-phenyl-1-(2-sulfanylethyl)imidazolidin-2-one Chemical compound N1C(=O)N(CCS)CC1C1=CC=CC=C1 KKEBXNMGHUCPEZ-UHFFFAOYSA-N 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Abstract
A shallow-junction semiconductor device is fabricated by initially implanting a neutral species (non-doping impurity) into a surface region (30, 32) of a semiconductor body (10) prior to the introduction of a dopant therein. This implant serves as a getter for defects and also as a physical barrier. The thermal diffusivity of subsequently introduced dopant species is thereby significantly reduced. As a result, extremely shallow junctions (36, 38) are realized.
Description
SHALLOW-JUNCTION SEMICONDUCTOR DEVICES
Background of the Invention
This invention relates to shallow-junction semiconductor devices.
In various semiconductor devices, such as the metal-oxide-semiconductor field-effect transistor (MOSFET), it is desirable that a p-n junction of the device be as close to a substrate surface as possible. The present invention provides a means for obtaining p-n junctions which are significantly closer to a semiconductor body surface than was heretofore obtainable. Summary of the Invention
A neutral species is initially implanted into a surface region of a semiconductor body. In one example, the neutral species is implanted to form a layer whose maximum concentration occurs at a depth greater than that of a p-n junction to be subsequently formed. (In another example, the junction is subsequently established at a depth that is greater than the depth of the peak concentration of the neutral-species layer.) A dopant species is then implanted into the surface region at a depth less than the depth of the maximum-concentration of the previously implanted neutral species. Annealing to activate the dopant species is then carried out.
It is theorized that during this annealing step, the neutral-species layer serves to getter point defects in the body of the device. Additionally, this layer serves as a physical barrier to diffusion of dopant species. As a result, the diffusivity of the dopant species in the body is significantly lowered relative to the case in which no neutral-species layer is provided. In any event, the result is that a p-n junction is formed in the body of the device at an extremely shallow depth. Brief Description of the Drawing
FIGS. 1 through 4 are schematic representations of a portion of a MOSFET device at successive stages of a
fabrication sequence that embodies the principles of the present invention. Detailed Description
In accordance with this invention, shallow p-n junctions can be formed in a variety of semiconductor devices. These devices include, for example, p-n diodes, bipolar transistors and MOSFET devices. By way of example, the invention is described in connection with the provision of shallow p-n junctions in a MOSFET device. A portion of such a MOSFET device at an intermediate stage of its fabrication cycle is shown in FIG. 1, such portion comprising a known gate-and-source-and -drain (GASAD) structure. The structure comprises a silicon body 10 having field-oxide (silicon dioxide) portions 12, 14 thereon.
The structure further includes a gate-oxide (silicon dioxide) layer 16, a doped polysilicon layer 18, and a metallic suicide (e.g. tantalum disilicide) layer 20. Also, the structure includes additional silicon dioxide layers 22,24. Openings 25, 26 are defined by the oxide layers 12, 22 and 14, 24. Source and drain regions are later formed in the body 10 in approximate alignment with these openings.
In accordance with the invention, a so-called neutral species is implanted into regions of body 10 defined by the openings 25, 26. Known ion implantation techniques can be used.
The term "neutral species" means ion species that do not produce active carriers in the semiconductor body and that are effective to limit the diffusivity of active species in the body. Such neutral species include carbon, oxygen, argon or any other inert gas. Group IV elements such as silicon, germanium and tin, and nitrogen (minor activity) . ions directed at the FIG. 2 structure are represented by arrows 28, the ions reaching the body 10 only through the openings 25, 26. In FIG. 2, the depth of
O
the peak or maximum concentration of the approximately Gaussian-shaped distribution of the neutral-species implant in the body 10 is schematically depicted by lines 30, 32 formed with x's. Illustratively, the dosage of the neutral-species implant represented in FIG. 2 is selected to provide approximately one or two monolayers of the neutral species at the peak-concentration depth. Additionally, for the illustrative MOSFET device shown, the energy of the incident ions is selected such that the peak concentration of the implanted neutral species occurs approximately 2000 A below the surface of the body 10. In some devices, the peak concentration of the neutral-species implant is selected to occur at a depth greater than that of the p-n junction(s) to be subsequently formed in the body 10. In such devices, the depth of the subsequently formed p-n junction(s) is, for example, approximately one-tenth to three-quarters that of the depth of the peak concentration of the neutral species. (In other devices, described below, the depth of the p-n junction(s) is greater than the depth of the peak concentration of the neutral-species implant.) Various dosages and energies can be used. One set of dosage and energy values for the aforelisted neutral species is as follows: carbon, 5 x 10 15 ions per square centimeter (i/cm2), 80 kilo-electron-volts (keV); oxygen, 5 x 10 15 i/cm946, 80 keV; silicon, 5 x
1015 i/cm2, 150 keV; germanium, 5 x 1015 i/cm2, 300 keV; tin, 5 x 1015 i/cm2, 400 keV; argon, 5 x 10 15 i/cm946, 180 keV; and nitrogen, 5 x 10 15 i/cm*6, 80 keV. For these values, the respective peak-concentration depth of each of the neutral species is approximately 2000 A below the surface of the body 10 shown in FIG. 2.
In some, but not necessarily all cases, the device structure represented in FIG. 2 is next subjected to an annealing step. (For a subsequently introduced active species such as arsenic, it may actually be advantageous
_ O
• - wip
^ .N'
not to anneal the implanted neutral species at this point in the fabrication procedure.) In this annealing step, - damage to the crystalline structure of the body 10 caused by the neutral-species implant is reduced. Further, the implanted species is stabilized and in effect locked in place in the body 10. Also, some gettering of defects and impurities in the body 10 typically occurs during this annealing step.
The annealing is done, for example, at a temperature in the range 700-to-900 degrees Celsius in an inert ambient for about one-half hour. During annealing, no substantial vertical or lateral movement of the implanted neutral species occurs. Nor does any substantial movement occur later during the so-called activation annealing step described below.
Next, an active species is introduced into the structure by any of various known means, e.g., by ion implantation, as indicated by the arrows 34 in FIG. 3. The implanted active species comprises, for example, a pentavalent n-type impurity such as arsenic, phosphorus or antimony, or a trivalent p-type impurity such as boron or gallium.
The depth of the peak or maximum concentration of the approximately Gaussian-shaped distribution of the active-species implant in the body 10 is schematically represented in FIG. 3 by "lines 36, 38 formed with dots.
The peak concentration of the implanted active species is selected to occur relatively close to the top surface of the body 10, e.g., at a depth of approximately 200-to-1000 A.
More specifically, for a carbon neutral species implant having a peak-concentration depth 30, 32 (FIG. 3) of about 2000 A, an arsenic implant having a peak- concentration depth 36, 38 of approximately 200 A is achieved by implanting 4 x 10 i/cπr at 30 keV. For a carbon or nitrogen implant having a peak-concentration depth 30 , 32 ( FIG . 3 ) of about 2000 A , a boron impl ant
OMPI ■Λ ~ Wl?θ
having a peak-concentration depth 36, 38 of approximately 1000 A is achieved by implanting 4 x 1015 i/cm2 at 30 keV.
Subsequently, standard activation annealing of the second-implanted or active dopant species is carried out. During this step, it is believed that gettering of point defects and metallic impurities occurs in the body 10. It appears also that, because of this gettering action, the thermal diffusivity of the active species is substantially reduced relative to what it would have been in the absence of the neutral-species implant. Additionally, it appears that the priorly formed neutral-species implant serves as a physical barrier against diffusion of the active species. However, regardless of the physical phenomena involved, the result of the described process is that the p-n junction formed by the active-species implant occurs at a depth far less than it would have been if the neutral-species implant had not been present. Extremely shallow p-n junctions are thereby formed. For an active-species implant of arsenic, activation annealing is carried out at, for example, about 1000 degrees Celsius for approximately three hours in a standard mildly dry oxidizing atmosphere. The resulting p-n junction is at a depth of approximately 1400 A. without the priorly implanted neutral-species, but with all other processing conditions approximately the same, the p-n junction is at a depth of about 3700 A.
For an active-species implant of boron, activation annealing is carried out at, for example, about 900 degrees Celsius for approximately five hours in a standard mildly dry oxidizing atmosphere. The p-n junction occurs at approximately 3300 A. without the presence of the neutral-species implant, but with all other processing conditions approximately the same, the p-n junction occurs at a depth of about 6700 A.
In the example above in which the active species comprises arsenic, the p-n junction is at a depth less than
the depth of the peak concentration of an implanted neutral species layer. Conversely, in the example above in which the active species comprises boron, the p-n junction is at a depth greater than the depth of the peak concentration of the implanted neutral-species layer. In general, it is feasible to form p-n junctions at a depth in the range of approximately one-tenth to two times the depth of the peak concentration of the implanted neutral-species layer.
It is possible to form the p-n junction at a depth less than the depth of the peak concentration of the implanted neutral-species layer or in a number of ways. For example, the active impurity species can be initially introduced into the device structure at a shallower depth than specified above for boron and/or by activation annealing the structure at a lower temperature than specified above. Or the peak concentration of the neutral- species layer can be initially formed sufficiently deep that, after annealing, the junction is established at a depth less than the depth of the peak concentration of the neutral-species layer.
Claims
Claims
1. A device comprising: a semiconductor body (10) CHARACTERIZED BY a neutral-species layer (30, 32) in said body having a profile whose peak concentration is at a predetermined depth below a surface of said body, and a p-n junction (36,38) in said body at a depth below said surface that is approximately one-tenth to two times that of said predetermined depth.
2. A device as in claim 1 wherein said neutral species is selected from the group consisting of carbon, oxygen, silicon, germanium, tin, an inert gas and nitrogen. 3. A device as in claim 2 wherein said p-n junction is established in said body at a depth that is approximately one-tenth to three quarters that of the depth of the peak concentration of said neutral species.
4. A device as in claim 1 wherein the peak concentration of said neutral-species layer is approximately 2000 A below said surface and said junction is approximately 1400 A below said surface.
5. A method of fabricating a semiconductor device, CHARACTERIZED BY the steps of implanting a neutral species through a surface of a semiconductor body (10) to form a neutral-species layer (30,32) having a peak concentration at a predetermined depth below said surface, introducing an active species through said surface, and annealing said body to activate said active species and to establish a p-n junction (36, 38) in said body.
6. A method as in claim 5 wherein the peak concentration of the active species introduced through
said surface is established, before annealing, at a depth that is less than the depth of the peak concentration of said neutral-species layer.
7. A method as in claim 6 wherein said junction is established after annealing at a depth in the range of approximately one-tenth to two times said predetermined depth.
8. A method as in claim 7 wherein said neutral species is selected from the group consisting of carbon, oxygen, silicon, germanium, tin, an inert gas and nitrogen.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US51675583A | 1983-07-25 | 1983-07-25 | |
| US516755 | 1983-07-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0151585A1 EP0151585A1 (en) | 1985-08-21 |
| EP0151585A4 true EP0151585A4 (en) | 1986-02-20 |
Family
ID=24056961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19840902405 Withdrawn EP0151585A4 (en) | 1983-07-25 | 1984-06-04 | Shallow-junction semiconductor devices. |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0151585A4 (en) |
| JP (1) | JPS60501927A (en) |
| CA (1) | CA1222835A (en) |
| WO (1) | WO1985000694A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2578096A1 (en) * | 1985-02-28 | 1986-08-29 | Bull Sa | Method of manufacturing an MOS transistor and resulting integrated circuit device |
| NL8501992A (en) * | 1985-07-11 | 1987-02-02 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
| US4683637A (en) * | 1986-02-07 | 1987-08-04 | Motorola, Inc. | Forming depthwise isolation by selective oxygen/nitrogen deep implant and reaction annealing |
| US4786608A (en) * | 1986-12-30 | 1988-11-22 | Harris Corp. | Technique for forming electric field shielding layer in oxygen-implanted silicon substrate |
| EP0350845A3 (en) * | 1988-07-12 | 1991-05-29 | Seiko Epson Corporation | Semiconductor device with doped regions and method for manufacturing it |
| US5654209A (en) * | 1988-07-12 | 1997-08-05 | Seiko Epson Corporation | Method of making N-type semiconductor region by implantation |
| JP2773957B2 (en) * | 1989-09-08 | 1998-07-09 | 富士通株式会社 | Method for manufacturing semiconductor device |
| JPH05190849A (en) * | 1992-01-14 | 1993-07-30 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| KR970072066A (en) * | 1996-04-29 | 1997-11-07 | 윌리엄 비. 켐플러 | How to optimize the sub-amorphous threshold amount implantation energy used prior to dopant implantation to achieve shallower junctions |
| KR100527207B1 (en) * | 1996-05-08 | 2005-11-09 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion |
| US6051460A (en) * | 1997-11-12 | 2000-04-18 | Advanced Micro Devices, Inc. | Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon |
| US6013546A (en) * | 1997-12-19 | 2000-01-11 | Advanced Micro Devices, Inc. | Semiconductor device having a PMOS device with a source/drain region formed using a heavy atom p-type implant and method of manufacture thereof |
| US6146934A (en) * | 1997-12-19 | 2000-11-14 | Advanced Micro Devices, Inc. | Semiconductor device with asymmetric PMOS source/drain implant and method of manufacture thereof |
| US6087209A (en) * | 1998-07-31 | 2000-07-11 | Advanced Micro Devices, Inc. | Formation of low resistance, ultra shallow LDD junctions employing a sub-surface, non-amorphous implant |
| FR2828331A1 (en) * | 2001-07-31 | 2003-02-07 | St Microelectronics Sa | METHOD FOR MANUFACTURING BIPOLAR TRANSISTOR IN A CMOS INTEGRATED CIRCUIT |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2014797A1 (en) * | 1969-03-28 | 1970-10-08 | Hitachi Ltd., Tokio | Semiconductor component and process for its manufacture |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3796929A (en) * | 1970-12-09 | 1974-03-12 | Philips Nv | Junction isolated integrated circuit resistor with crystal damage near isolation junction |
| JPS553828B2 (en) * | 1972-11-30 | 1980-01-26 | ||
| US4069068A (en) * | 1976-07-02 | 1978-01-17 | International Business Machines Corporation | Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions |
| JPS53120263A (en) * | 1977-03-29 | 1978-10-20 | Nec Corp | Manufacture of semiconductor device |
| JPS5583263A (en) * | 1978-12-19 | 1980-06-23 | Fujitsu Ltd | Mos semiconductor device |
| JPS55121680A (en) * | 1979-03-13 | 1980-09-18 | Nec Corp | Manufacture of semiconductor device |
| JPS5627924A (en) * | 1979-08-14 | 1981-03-18 | Toshiba Corp | Semiconductor device and its manufacture |
| JPS5632742A (en) * | 1979-08-24 | 1981-04-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5693367A (en) * | 1979-12-20 | 1981-07-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS577161A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Mos semiconductor device |
| JPS57106123A (en) * | 1980-12-24 | 1982-07-01 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5856417A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Low-temperature activating method for boron ion implanted layer in silicon |
-
1984
- 1984-06-04 JP JP59502397A patent/JPS60501927A/en active Pending
- 1984-06-04 WO PCT/US1984/000851 patent/WO1985000694A1/en not_active Application Discontinuation
- 1984-06-04 EP EP19840902405 patent/EP0151585A4/en not_active Withdrawn
- 1984-06-27 CA CA000457570A patent/CA1222835A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2014797A1 (en) * | 1969-03-28 | 1970-10-08 | Hitachi Ltd., Tokio | Semiconductor component and process for its manufacture |
Non-Patent Citations (3)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no. 8, January 1979, pages 3154-3156, New York, US; W.K. CHU et al.: "Method of reducing arsenic thermal diffusion by noble gas ion implantation" * |
| JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 116, no. 1, January 1969, pages 73-77, Princeton, US; T.H. YEH et al.: "Strain compensation in silicon by diffused impurities" * |
| See also references of WO8500694A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1985000694A1 (en) | 1985-02-14 |
| EP0151585A1 (en) | 1985-08-21 |
| JPS60501927A (en) | 1985-11-07 |
| CA1222835A (en) | 1987-06-09 |
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