EP0062174B1 - Apparatus treating specimens at raised temperatures - Google Patents
Apparatus treating specimens at raised temperatures Download PDFInfo
- Publication number
- EP0062174B1 EP0062174B1 EP82101965A EP82101965A EP0062174B1 EP 0062174 B1 EP0062174 B1 EP 0062174B1 EP 82101965 A EP82101965 A EP 82101965A EP 82101965 A EP82101965 A EP 82101965A EP 0062174 B1 EP0062174 B1 EP 0062174B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- reaction chamber
- gas
- end cap
- pressure vessel
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 76
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 57
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Definitions
- the present invention relates to an apparatus for treating specimens at raised temperatures and in particular for the oxidation or annealing of specimens, such as silicon semiconductor devices and the like, under conditions of high pressure and temperature.
- High Pressure Reactors as known in the art consist of a chamber for containing the semiconductor device, sample, wafer, etc., and a suitable gas is introduced into the chamber at a high pressure.
- a "furnace" in the form of heating elements is provided proximate to the chamber to raise the temperature. The operation of the gas under high pressure and temperature results in the desired oxidation of the device.
- U.S. Specification No. 4,018,184 discloses apparatus for treating specimens at raised temperatures.
- the Nagasawa apparatus comprises a reaction chamber for containing the specimens, means for heating a specimen within the reaction chamber, a pressure vessel enclosing the reaction chamber and the heating means and means for supplying gas to the reaction chamber and the pressure vessel at substantially similar pressures.
- the Nagasawa apparatus comprises two separated source of gas under pressure respectively connected via two independent pressure regulating devices to the reaction chamber and the pressure vessel.
- the reaction chamber pressure regulating device is sensitive to the pressure in the pressure vessel and the pressure vessel regulating device is sensitive to the pressure in the reaction chamber and act to maintain the two pressures at similar values, that is at not substantially different values so as to prevent pressure rupture of the reaction chamber.
- the Nagasawa apparatus requires duplicate gas sources and associated duplicate pressure regulating devices and requires two separate gas flow paths.
- the Applicants have appreciated that the use of such duplicate apparatus and parallel flow paths can be avoided with advantage.
- UK-A-1,153,372 discloses apparatus for treating specimens at raised temperatures, said apparatus comprising an inner tube providing a reaction chamber for containing the specimens, an outer tube' providing a pressure vessel enclosing the reaction chamber and means for supplying gas to the reaction chamber and the pressure vessel, the gas-supply-means comprising a gas flow path leading from a gas inlet connected to the reaction chamber, through the reaction chamber, through a flow passage inter-connecting the reaction chamber and the pressure vessel and through the pressure vessel to an outlet from the pressure vessel.
- the Wilkes apparatus is placed within an electrical heating element in order to heat the specimen to the required temperature. To prevent any impurities which diffuse from the region of the heating means through the wall of the pressure vessel contacting the specimens, the gas flow through the apparatus is maintained sufficiently high that the impurities are swept away in the gas stream and out through the outlet.
- the Wilkes apparatus may well be satisfactory where the heating means are external to the apparatus and the amount of contaminant or impurity is relatively low, but if the heating means are within the pressure vessel it has heretofore been thought necessary to separate the gases in the reaction chamber and the pressure vessel c.f. US-A-4,018,184.
- Another object of the present invention is to provide an improved. elevated pressure reactor having a special closure on a reaction chamber within a pressure vessel to prevent gas in said pressure vessel from re-entering the reaction chamber.
- a further object of the present invention is to provide an elevated pressure reactor incorporating an improved heating furnace having two concentric heating elements.
- a still further object of the present invention is to provide an improved elevated pressure reactor having a magnetically coupled mechanism for moving a specimen within the reactor.
- the invention provides apparatus for treating specimens at raised temperatures, said apparatus comprising a reaction chamber for containing the specimens, means for heating a specimen within the reaction chamber, a pressure vessel enclosing the reaction chamber and means for supplying gas to the reaction chamber and the pressure vessel, the gas-supply-means comprising a gas flow path leading from a single gas inlet connected to the reaction chamber, through the reaction chamber, through a flow passage inter-connecting the reaction chamber and the pressure vessel and through the pressure vessel to an outlet from the pressure vessel, characterised in that said apparatus has the heating means disposed within the pressure vessel and that the flow passage is provided by an end closure device comprising first and second end cap elements, said first and second end cap element being disposed over the end and along a part of the length of the reaction chamber with a first space between the exterior surface of said reaction chamber and the interior surface of said first end cap, the cross-sectional area of said first space being smaller than the cross-sectional area of said end of said reaction chamber and said second end cap element having one end fixed to the exterior surface
- a schematic illustration of an elevated pressure reactor or oxidation system including a pressure chamber 10, composed, for example, of steel, inside of which is located a reaction tube 12 which may be made of quartz. Inside of the reaction tube 12 is located a wafer boat 14 for containing the object or specimen to be oxidized, annealed, etc. Wafer boat 14 is connected to and can be moved by a rod 16.
- Two separately controlled, concentrically arranged furnaces or heating elements 18 and 20 surround the reaction tube 12. Each of the furnaces 18 and 20 actually contain three heating elements, at the ends and in the center.
- One end of the pressure chamber 10 is provided with a hinged door to provide access to the wafer boat 14.
- One end of reaction tube 12 has a closure 22 for providing a high drift to diffusion velocity ratio of the gas exiting from the reaction tube for maintaining the pressure inside reaction tube 12 and inside pressure chamber 10 at the same value.
- Closure 22 is shown in greater detail in Fig. 2 and will be more fully discussed hereinbelow.
- the other end of reaction tube 12 extends through the wall of pressure chamber 10 via elongated tube 24 and is connected to a source of gas 26.
- Gas source 26 is shown as a supply of pressured gas cylinders 26-1, 26-2, 26-3, and 26-4, however any suitable source of gas, such as a compressor could be used.
- Rod 16 the one end of which is connected to wafer boat 14, also has a magnetic slug 28 fixed thereon.
- a pair of magnets 30 and 32 are located outside tube 24, as well as a surrounding tube 34 which is the gas exit tube for pressure chamber 10 which will be later described.
- Magnets 30 and 32 are connected to a motor, not shown, and can move toward the left or the right in the drawing.
- Magnetic slug 28, magnetically coupled to magnets 30 and 32 follows this left or right movement and, being connected to wafer boat 14 via rod 16, causes wafer boat 14 to move left or right within reaction tube 12 as desired by the operator who controls the magnet motor.
- furnaces 18 and 20 consisting of electrical heating elements connected to external furnace leads 36. It is known that heat loss or heat transfer becomes greater as pressure increases because of high convection. If only one furnace were employed, as in some conventional high pressure reactors, heat loss due to convections will occur because of the temperature difference between the furnace and the outer wall of the pressure chamber. This creates excessive temperature inhomogeneties and requires the use of excessive power.
- a second furnace 20 is provided around inner furnace 18 and is maintained at a slightly lower temperature so there is only a small temperature difference and therefore corresponding heat loss from furnace 18 radically.
- a wall temperature control system which surrounds the entire pressure chamber 10 and temperature controlled fluid such as air, as in Fig. 1, or liquid is passed over the pressure chamber 10.
- This air, or temperature control fluid is maintained at an elevated temperature, but which is lower than the temperature of the wall of the reactor chamber 12.
- the temperature control fluid may be introduced at 300 degrees so that the temperature difference between the outer furnace 20 and the pressure chamber wall is not too large and heat loss due to convection between the outer furnace 20 and the pressure chamber wall is also reduced. Thus, heat loss from the reaction tube 12 is minimized.
- the apparatus of Fig. 1 incorporates a unique pressure feature wherein a single gas flow technique is employed. More particularly, the gas pressure within quartz reaction tube 12 and the gas pressure within pressure chamber 10 is maintained at substantially the same pressure, which is controlled by a single source of gas pressure.
- Prior art systems include separate regulators for the pressure in the inner reaction tube and the outer pressure chamber. Since the pressure in the outer pressure chamber must not be less than the pressure in the inner reaction tube to prevent the reaction tube from rupturing, the use of two separate regulators in the prior art apparatus presents the possibility of destruction should the pressure regulator for the outer pressure chamber fail. This possibility is avoided with the single pressure gas flow feature of the present invention.
- gas from source 26 enters the system through a conventional valve 38 and filter 40 and connector 41.
- the gas is introduced through connector 41 directly into inner tube 24 and flows under pressure into reaction tube 12.
- the gas then flows out through closure 22 at the end of reaction tube 12 and into outer pressure chamber 10.
- Closure 22 is designed to permit the gas to flow from reaction tube 12 into pressure chamber 10, but does not permit any back flow or drift from pressure chamber 10 into reaction tube 12. The details of closure 22 will be later discussed more fully with reference to Fig. 2.
- the gas then flows from outer pressure chamber 10 through the left side of Fig. 1 structure into tube 34 and out of the system via exit 42. It should be noted that as the gas exits in tube 34 it passes over the incoming gas in tube 24 and serves to pre-heat the incoming gas.
- the exit line path includes a conventional back pressure regulator 44 and variable leak 46 for adjustment purposes.
- a conventional relief valve 48 and gauge 50 are provided for pressure chamber 10 as well as a fail-safe rupture disc 52.
- a conventional solenoid valve 54 controlled by pressure switch 56, is provided to operate a part to bleed pressure from the apparatus at the end of operation.
- Conventional thermocouple leads 58 are also provided to measure temperatures at various places within the apparatus.
- closure 22 including reaction tube 12, a cylindrical cap element 22-1 which is located at the open end of reaction tube 12 and extends back over the outer wall of reaction tube 12.
- a second cylindrical cap element 22-2 is fixed to the wall of reaction tube 12 and extends back over cap element 22-1.
- a tortuous passage 21 is formed between the elements 22-1 and 22-2 and tube 12.
- reaction tube 12 may have an inner diameter of 91 mm and an outer diameter of 96 mm.
- Cap element 22-1 may have an inner diameter of 103 mm and an outer diameter of 107 mm and cap element 22-2 may have an inner diameter of 108 mm and an outer diameter of 114 mm.
- closure 22 The purpose of the closure 22 is to prevent any back drift of gas from pressure chamber 10 into reaction tube 12 since the gas in pressure chamber 10 becomes dirty due to the packing material in and around the furnaces 18 and 20, and the gas in reaction tube 12 must be of high purity.
- the drift velocity V DR of the gas as it passes from reaction tube 12 into pressure chamber 10 must be greater than the diffusion velocity V D of the gas.
- Figs. 1 and 2 The closure of Figs. 1 and 2 as shown, includes two elements 22-1 and 22-2, which form a serpentine shaped baffle for the path of the gas from reaction tube 12. It will be appreciated that, if necessary or desirable in other embodiments, additional elements such as 22-1 and 22-2 but with larger diameters may be concentrically mounted over element 22-2 to provide further stages of decreasing areas for the gas to travel through before reaching pressure chamber 10.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US251591 | 1981-04-06 | ||
US06/251,591 US4351805A (en) | 1981-04-06 | 1981-04-06 | Single gas flow elevated pressure reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0062174A1 EP0062174A1 (en) | 1982-10-13 |
EP0062174B1 true EP0062174B1 (en) | 1987-01-14 |
Family
ID=22952609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP82101965A Expired EP0062174B1 (en) | 1981-04-06 | 1982-03-12 | Apparatus treating specimens at raised temperatures |
Country Status (4)
Country | Link |
---|---|
US (1) | US4351805A (es) |
EP (1) | EP0062174B1 (es) |
JP (2) | JPS57173947A (es) |
DE (1) | DE3275106D1 (es) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4526534A (en) * | 1983-06-01 | 1985-07-02 | Quartz Engineering & Materials, Inc. | Cantilever diffusion tube apparatus and method |
US4459104A (en) * | 1983-06-01 | 1984-07-10 | Quartz Engineering & Materials, Inc. | Cantilever diffusion tube apparatus and method |
US4573431A (en) * | 1983-11-16 | 1986-03-04 | Btu Engineering Corporation | Modular V-CVD diffusion furnace |
JPS6164130A (ja) * | 1984-09-06 | 1986-04-02 | Toshiba Corp | 熱処理炉 |
JPS62112330A (ja) * | 1985-11-11 | 1987-05-23 | Rohm Co Ltd | 高速スイツチング素子の製造方法 |
US4651441A (en) * | 1986-04-01 | 1987-03-24 | Mettler Instrumente Ag | Drying oven including shuttle transporting means |
JPS6455821A (en) * | 1987-08-26 | 1989-03-02 | Dainippon Screen Mfg | Rapid cooling type heat treating apparatus |
US5167717A (en) * | 1989-02-15 | 1992-12-01 | Charles Boitnott | Apparatus and method for processing a semiconductor wafer |
JP3194971B2 (ja) * | 1990-01-08 | 2001-08-06 | エルエスアイ ロジック コーポレーション | Cvdチャンバに導入されるプロセスガスをcvdチャンバへの導入前に濾過するための装置 |
US5167716A (en) * | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
US5228940A (en) * | 1990-10-03 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Fine pattern forming apparatus |
JP2501948B2 (ja) * | 1990-10-26 | 1996-05-29 | 三菱電機株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US5246532A (en) * | 1990-10-26 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing apparatus |
US5118286A (en) * | 1991-01-17 | 1992-06-02 | Amtech Systems | Closed loop method and apparatus for preventing exhausted reactant gas from mixing with ambient air and enhancing repeatability of reaction gas results on wafers |
GB9217607D0 (en) * | 1992-08-19 | 1992-09-30 | Univ Edingburgh | Improved furnace and control method therefor |
US5451258A (en) * | 1994-05-11 | 1995-09-19 | Materials Research Corporation | Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber |
NL1005541C2 (nl) | 1997-03-14 | 1998-09-18 | Advanced Semiconductor Mat | Werkwijze voor het koelen van een oven alsmede oven voorzien van een koelinrichting. |
EP1160838B1 (en) * | 2000-05-31 | 2007-12-05 | Tokyo Electron Limited | Heat treatment system and method |
JP5205910B2 (ja) * | 2006-10-31 | 2013-06-05 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
BR112012026945B1 (pt) * | 2010-04-20 | 2021-05-25 | Qiagen Gmbh | método e aparelho para controlar a temperatura de um líquido |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1068695B (de) * | 1958-02-06 | 1959-11-12 | Farbwerke Hoechst Aktiengesellschaft vormals Meister Lucius 6. Brüning, Frankfurt/M | Verfahren zur Herstellung von Fluoräthylenen |
US3112919A (en) * | 1960-10-27 | 1963-12-03 | Vac Hyd Proc Corp | Vacuum furnace |
US3322501A (en) * | 1964-07-24 | 1967-05-30 | Ibm | Preparation of gallium arsenide with controlled silicon concentrations |
US3354004A (en) * | 1964-11-17 | 1967-11-21 | Ibm | Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems |
US3345223A (en) * | 1965-09-28 | 1967-10-03 | Ibm | Epitaxial deposition of semiconductor materials |
GB1153372A (en) * | 1966-06-21 | 1969-05-29 | Associated Semiconductor Mft | Improvements in or relating to Methods of Heat Treating Semiconductor Bodies. |
USRE28402E (en) | 1967-01-13 | 1975-04-29 | Method for controlling semiconductor surface potential | |
US3577286A (en) * | 1967-10-11 | 1971-05-04 | Ibm | Semiconductor preparation and deposition process |
US3662708A (en) * | 1970-03-23 | 1972-05-16 | Airco Inc | Apparatus for supporting a substrate holder |
US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
JPS5824711B2 (ja) * | 1976-11-11 | 1983-05-23 | 株式会社日立国際電気 | 炉の温度制御装置 |
US4154192A (en) * | 1976-12-10 | 1979-05-15 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing apparatus for semiconductor devices |
US4268538A (en) * | 1977-03-09 | 1981-05-19 | Atomel Corporation | High-pressure, high-temperature gaseous chemical method for silicon oxidation |
US4167915A (en) * | 1977-03-09 | 1979-09-18 | Atomel Corporation | High-pressure, high-temperature gaseous chemical apparatus |
US4204893A (en) * | 1979-02-16 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source |
US4235841A (en) * | 1979-02-21 | 1980-11-25 | Autoclave Engineers, Inc. | Double chambered high pressure furnace |
-
1981
- 1981-04-06 US US06/251,591 patent/US4351805A/en not_active Expired - Fee Related
- 1981-12-11 JP JP56198703A patent/JPS57173947A/ja active Granted
-
1982
- 1982-03-12 DE DE8282101965T patent/DE3275106D1/de not_active Expired
- 1982-03-12 EP EP82101965A patent/EP0062174B1/en not_active Expired
-
1988
- 1988-10-18 JP JP63260714A patent/JPH01132127A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0122980B2 (es) | 1989-04-28 |
US4351805A (en) | 1982-09-28 |
JPH0252421B2 (es) | 1990-11-13 |
DE3275106D1 (en) | 1987-02-19 |
JPS57173947A (en) | 1982-10-26 |
EP0062174A1 (en) | 1982-10-13 |
JPH01132127A (ja) | 1989-05-24 |
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