EP0057121B1 - Hochfrequenz-Doppelbanderreger und eine Antenne mit einem solchen Erreger - Google Patents

Hochfrequenz-Doppelbanderreger und eine Antenne mit einem solchen Erreger Download PDF

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Publication number
EP0057121B1
EP0057121B1 EP82400050A EP82400050A EP0057121B1 EP 0057121 B1 EP0057121 B1 EP 0057121B1 EP 82400050 A EP82400050 A EP 82400050A EP 82400050 A EP82400050 A EP 82400050A EP 0057121 B1 EP0057121 B1 EP 0057121B1
Authority
EP
European Patent Office
Prior art keywords
band
source
frequency
plane
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82400050A
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English (en)
French (fr)
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EP0057121A2 (de
EP0057121A3 (en
Inventor
François Salvat
Jean Bouko
Claude Coquio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
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Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to AT82400050T priority Critical patent/ATE26628T1/de
Publication of EP0057121A2 publication Critical patent/EP0057121A2/de
Publication of EP0057121A3 publication Critical patent/EP0057121A3/fr
Application granted granted Critical
Publication of EP0057121B1 publication Critical patent/EP0057121B1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q25/00—Antennas or antenna systems providing at least two radiating patterns
    • H01Q25/04—Multimode antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/40—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements
    • H01Q5/45—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements using two or more feeds in association with a common reflecting, diffracting or refracting device

Definitions

  • the present invention relates to a monopulse, multimode dual-band microwave source and to aerials using such a source.
  • the technique of low-site tracking radars is oriented towards dual-band radars.
  • the low band (band I for example) allows a correct continuation up to a certain angle of elevation above the horizon.
  • a higher frequency band is used (W band for example) giving a much finer beam.
  • the second cited application describes a single-band and wideband multimode microwave source structure constituting FIG. 1 of the present application and described by way of prior art.
  • FIG. 3 of said patent illustrates a concentric network of monopulse microwave sources working in two different frequency bands.
  • a dual-band microwave source preferably monopulse, multimode and broadband comprising an assembly constituted by a first cavity supplied by an excitation group transmitting the fundamental mode in a first frequency band, and a penetrating profiled obstacle in this cavity, is characterized in that this profiled obstacle is hollow, internally delimiting a second cavity into which opens another group of excitation guides transmitting the fundamental mode in a frequency band different from the first, this second cavity opening into the first capable of transmitting simultaneously the waves which propagate there coming from the two nested sources radiating in different frequency bands, one called lower (I), the other higher (S).
  • FIG. 1 represents, seen in section through a longitudinal plane containing the electric field vector (plane E), the broadband multimode source described in the second cited patent application.
  • the source essentially comprises a cavity 12, the opening of which is located in the plane S, behind which a plane moder H can be placed, which will constitute, with the plane moder E, a mixed microwave source, plane E, plane H; into this cavity open four guides 9, 10, 90 and 100, adjacent in pairs, along a wall 11 for the guides in the upper position 9 and 10, and a wall 110 for the guides in the lower position 90 to 100.
  • a profiled obstacle 17 whose shape and dimensions determine a different action depending on the frequency, on the modes created in the area where the obstacle is located. This shape is such that the obstacle projects inside the cavity 12 with a decreasing section.
  • This obstacle is a paving stone of trapezoidal cross section, the large base 18 of which is in the plane P, at the level of which the moderator feed guides open, in the part situated between the upper guides 9-10 and lower guides 90-100.
  • the small base 19 is located at a distance 1 from the plane P, inside the cavity 12 and at a distance a from the wall of the cavity, distance measured parallel to the electric field E. This distance is variable when passing from small to large base.
  • the sides of the block 17, between the large and the small base determine an angle a with the direction D perpendicular to the plane P.
  • the other dimensions of the moderator are b and c, the latter in a direction perpendicular to the plane of FIG. 1.
  • the cavity between the planes P B and S defines a transition leading to the horn 13 whose opening 16 constitutes the opening of the source.
  • a moderator in plane H can be produced using bars 14, 140 and 15, 150 arranged perpendicular to the plane of the figure in the horn 13.
  • the operation of the source E can be recalled by referring to FIG. 1.
  • the higher modes mainly the hybrid mode EM 12
  • the excitation plane of the hybrid mode EM 12 is found in P B , which happens to be the plane of the small base of the trapezoidal block 17.
  • the phasing length is then L s , length between the plane P B and the plane of the opening S of the moderator.
  • the mode report module has the following expression:
  • the excitation plane of the hybrid mode EM 12 is at P H , the intermediate position between the plane P and the plane P B.
  • the phasing length is L H , distance between the plane P H and the plane of the opening S.
  • the mode ratio module takes the following expression:
  • Figure 2 shows the same notations as Figure 1, these notations being assigned the index 1 when they relate to elements of the set operating at lower frequency and being assigned the index S when they relate elements of the assembly operating at higher frequency.
  • the cavities 12 housing the obstacles 17 terminate in a flared part 13 defining the opening plane of the assembly at its larger end. area.
  • the plane D corresponding to the cutting plane of FIG. 4 has been identified, the plane P ⁇ corresponding to the opening of the assembly operating at the higher frequency and the plane S, corresponding to the opening of the assembly operating at the lower frequency.
  • the entire cavity 12 s is located inside the obstacle 17,.
  • a lens 21 is arranged in the plane S 1.
  • This lens consists of parallel metal blades 22 arranged parallel to the electric field E s of the assembly operating at the higher frequency.
  • This lens the focus of which is located in the plane P s, has the effect of transforming the wave emitted by the source at a higher frequency into a plane wave.
  • the diameter of the lens 21 is chosen to be greater than the opening of the beam radiated in the plane S i.
  • the plane S is in the Rayleigh zone of the wave radiated by the assembly at a higher frequency. In practice, it is necessary to use mean frequency values of the two bands whose ratio is close to or greater than 10 so as to allow a simple mechanical realization of this condition.
  • a particular embodiment of a source according to the invention has been made using the band called band I of the order of 9 GHz as the lower frequency band and the band known as M of the order of higher frequency band 94 GHz.
  • the set in band M (new name of the band W) is calculated so that in the plane P s the parameters of the opening are respectively 16 mm and 40 mm.
  • the distance P s S is then chosen equal to 60 mm. It can be verified that under these conditions the plane S is in the Rayleigh zone of the assembly operating in the upper frequency band M. It is recalled that this condition is essential for the implementation of the invention.
  • the diameter of the lens 21 is then 45 mm.
  • FIG. 5 schematically represents the use of a source according to the present invention in a Cassegrain type antenna.
  • the broken path of the wave emitted by the element operating in the lower frequency band in vertical polarization is shown in dashed line and in broken line the path of the wave emitted by the element operating in the upper band in horizontal polarization.
  • a first semi-transparent reflector 30 intended to reflect the wave in the lower band is completely transparent with respect to the wave in the upper band. Since these two waves have orthogonal polarizations, this condition can be easily fulfilled by using a reflector made of conductors suitably arranged with respect to the orientations of the two electric fields.
  • the lower band wave is returned by the main reflector 31 to the right part of the figure having undergone a rotation of its polarization on the grid 33. It then passes through the semi-transparent reflector 30.
  • the upper band wave having crossed the reflector 30 without attenuation is totally reflected by the reflector 32 made of solid metal.
  • the diameter of this reflector is chosen taking into account the dimension of the upper band beam as defined by the lens 21 of the dual-band source. All of the energy is returned to the main reflector 31 and reflected to the right of the figure without any attenuation due to the reflector 30.
  • a reflector 32 with a diameter of 80 mm and a distance FF 'equal to 330 mm. 33 shows the surface of the main reflector 31 rotating the plane of polarization of the wave in the lower band so as to allow its transmission without attenuation through the intermediate reflector 30.
  • Such embodiments are well known to man art.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Aerials With Secondary Devices (AREA)
  • Waveguide Aerials (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Details Of Aerials (AREA)

Claims (6)

1. Breitbandige Multimode-Doppelband-Mikrowellenquelle, vorzugsweise vom Monopuls-Typ, mit einer Baugruppe, die gebildet ist durch einen ersten Hohlraum (12), welcher durch eine Erregergruppierung (9, 10, 90, 100) gespeist wird, welche den Grundmode in einem ersten Frequenzband überträgt, und durch ein profiliertes Hindernis (171). welches in diesen Hohlraum eindringt, dadurch gekennzeichnet, daß dieses profilierte Hindernis (17,) hohl ist und innenseitig einen zweiten Hohlraum (12s) bildet, worin eine weitere Gruppierung von Erregerleitern (9s, 10s, 90s, 100s) einmündet, welche den Grundmode in einem vom ersten verschiedenen Frequenzband übertragen, wobei dieser zweite (12S), in den ersten (121) einmündende Hohlraum gleichzeitig die Wellen übertragen kann, welche sich dort ausbreiten und von den zwei ineinandergesetzten Quellen kommen, die in den verschiedenen Frequenzbändern strahlen, wovon das eine als unteres (1) und das andere als oberes (S) bezeichnet wird.
2. Mikrowellenquelle nach Anspruch 1, dadurch gekennzeichnet, daß der erste Hohlraum (12), dessen Öffnung die Öffnung des E-Modenwandlers für die in dem ersten Frequenzband arbeitende Quelle bildet, durch ein sich erweiterndes Horn (13) fortgesetzt ist, das einen H-Modenwandler bildet, dessen Öffnung (S,) die Öffnung der vollständigen Quelle bildet, worin eine metallische Linse (21) angeordnet ist, welche die Wellen fokussiert, die zu dem zweiten, sogenannten oberen Frequenzband gehören.
3. Mikrowellenquelle nach einem der Ansprüche 1 und 2, dadurch gekennzeichnet, daß die Polarisationsebenen der Wellen der zwei betrachteten Frequenzbänder orthogonal sind und daß der Abstand zwischen den Öffnungen der in dem oberen Band (Ps) und der in dem unteren Band (S,) arbeitenden Quelle kleiner als die Abmessung der Rayleigh-Zone der Baugruppe ist, welche in dem oberen Band (S) arbeitet, gemessen in Ausbreitungsrichtung.
4. Mikrowellenquelle, für welche die Polarisationsebenen der Wellen der beiden betrachteten Frequenzbänder orthogonal sind, nach Anspruch 2 oder 3, dadurch gekennzeichnet, daß die Linse (21) für die Wellen des unteren Frequenzbandes (I) durchlässig ist und metallische Lamellen (22) umfaßt, die parallel zu dem elektrischen Feld der Wellen des oberen Bandes (S) sind.
5. Mikrowellenquelle nach Anspruch 1, dadurch gekennzeichnet, daß die zwei Hindernisse (17,. 17s) im Verhältnis der mittleren Frequenzen der Bänder I und S homothetisch sind.
6. Mikrowellenantenne mit einer Quelle nach einem der Ansprüche 1 bis 5, welche einen ersten Reflektor (32) aus Vollmaterial und mit einem Durchmesser anstrahlt, der etwas größer als die Öffnung der Baugruppe ist, welche im Band S arbeitet, und zwar über einen zweiten Reflektor (30), der durchlässig für die Welle ist, die von der Baugruppe ausgeht, die im Band S arbeitet, und halbdurchlässig für die Welle ist, die von der Baugruppe ausgeht, die in dem Band I arbeitet, in Zuordnung zu einem dritten, Hauptreflektor, der mit einem Gitter (33) zur Drehung der Polarisation ausgestattet ist, größere Abmessungen aufweist und um die genannte Quelle (1) herum angeordnet ist, sowie in der Fraunhoffer-Zone bezüglich der im Band I arbeitenden Baugruppe liegt.
EP82400050A 1981-01-23 1982-01-12 Hochfrequenz-Doppelbanderreger und eine Antenne mit einem solchen Erreger Expired EP0057121B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT82400050T ATE26628T1 (de) 1981-01-23 1982-01-12 Hochfrequenz-doppelbanderreger und eine antenne mit einem solchen erreger.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8101286A FR2498820A1 (fr) 1981-01-23 1981-01-23 Source hyperfrequence bi-bande et antenne comportant une telle source
FR8101286 1981-01-23

Publications (3)

Publication Number Publication Date
EP0057121A2 EP0057121A2 (de) 1982-08-04
EP0057121A3 EP0057121A3 (en) 1982-08-11
EP0057121B1 true EP0057121B1 (de) 1987-04-15

Family

ID=9254452

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82400050A Expired EP0057121B1 (de) 1981-01-23 1982-01-12 Hochfrequenz-Doppelbanderreger und eine Antenne mit einem solchen Erreger

Country Status (8)

Country Link
US (1) US4489331A (de)
EP (1) EP0057121B1 (de)
JP (1) JPS57142005A (de)
AT (1) ATE26628T1 (de)
CA (1) CA1176368A (de)
DE (1) DE3276092D1 (de)
DK (1) DK21482A (de)
FR (1) FR2498820A1 (de)

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SE456203B (sv) * 1983-09-14 1988-09-12 Ericsson Telefon Ab L M Monopulsmatare for sendning och mottagning av radarsignaler inom tva fran varandra skilda frekvensband
US4769646A (en) * 1984-02-27 1988-09-06 United Technologies Corporation Antenna system and dual-fed lenses producing characteristically different beams
US5003321A (en) * 1985-09-09 1991-03-26 Sts Enterprises, Inc. Dual frequency feed
US4740795A (en) * 1986-05-28 1988-04-26 Seavey Engineering Associates, Inc. Dual frequency antenna feeding with coincident phase centers
US4866454A (en) * 1987-03-04 1989-09-12 Droessler Justin G Multi-spectral imaging system
US4998113A (en) * 1989-06-23 1991-03-05 Hughes Aircraft Company Nested horn radiator assembly
FR2709380B1 (fr) * 1993-08-23 1995-09-22 Alcatel Espace Antenne bi-faisceaux à balayage électronique.
FR2713404B1 (fr) * 1993-12-02 1996-01-05 Alcatel Espace Antenne orientale avec conservation des axes de polarisation.
US5455589A (en) * 1994-01-07 1995-10-03 Millitech Corporation Compact microwave and millimeter wave radar
JPH0951293A (ja) * 1995-05-30 1997-02-18 Matsushita Electric Ind Co Ltd 室内無線通信システム
US5835057A (en) * 1996-01-26 1998-11-10 Kvh Industries, Inc. Mobile satellite communication system including a dual-frequency, low-profile, self-steering antenna assembly
NL1004025C2 (nl) * 1996-09-13 1998-03-16 Hollandse Signaalapparaten Bv Werkwijze voor het bepalen van een inslagpunt van een afgevuurd projectiel ten opzichte van een doel.
CA2254139A1 (en) * 1998-01-08 1999-07-08 Nicholas L. Muhlhauser Reflector based dielectric lens antenna system
DE19838246C2 (de) * 1998-08-22 2001-01-04 Daimler Chrysler Ag Bispektrales Fenster für einen Reflektor und Reflektorantenne mit diesem bispektralen Fenster
US6243049B1 (en) * 1999-09-27 2001-06-05 Trw Inc. Multi-pattern antenna having independently controllable antenna pattern characteristics
DE60120909T2 (de) * 2001-03-22 2007-02-08 Alcatel Doppeltreflektor-Antenne mit Ablenker
US6980170B2 (en) * 2001-09-14 2005-12-27 Andrew Corporation Co-located antenna design
US6680711B2 (en) * 2002-01-08 2004-01-20 The Boeing Company Coincident transmit-receive beams plus conical scanned monopulse receive beam
US6937201B2 (en) * 2003-11-07 2005-08-30 Harris Corporation Multi-band coaxial ring-focus antenna with co-located subreflectors
US20080094298A1 (en) * 2006-10-23 2008-04-24 Harris Corporation Antenna with Shaped Asymmetric Main Reflector and Subreflector with Asymmetric Waveguide Feed
FR2909225B1 (fr) * 2006-11-29 2010-08-20 Cit Alcatel Dispositif d'alimentation d'une antenne a reflecteur
CN113206383A (zh) * 2018-07-26 2021-08-03 华为技术有限公司 一种馈源装置、双频微波天线及双频天线设备

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Also Published As

Publication number Publication date
ATE26628T1 (de) 1987-05-15
US4489331A (en) 1984-12-18
EP0057121A2 (de) 1982-08-04
DE3276092D1 (en) 1987-05-21
FR2498820A1 (fr) 1982-07-30
DK21482A (da) 1982-07-24
FR2498820B1 (de) 1985-01-04
JPS57142005A (en) 1982-09-02
CA1176368A (en) 1984-10-16
EP0057121A3 (en) 1982-08-11

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