Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
  • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
  • H01L25/074—Stacked arrangements of non-apertured devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01023—Vanadium [V]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01047—Silver [Ag]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01076—Osmium [Os]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01079—Gold [Au]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01082—Lead [Pb]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1301—Thyristor

Definitions

• the invention relates to a semiconductor arrangement with at least two semiconductor elements, at least one of which is controllable, in the form of semiconductor tablets provided with electrodes, insulated or passivated on the edge side, which are electrically connected to one another and arranged in a common housing, wherein two main connections as anode and cathode connections and, when the semiconductor elements are connected in series, a further main connection as center tap and the control connections are led out of the housing on one side.
• controllable and non-controllable semiconductor components i.e. Thyristors 5 and diodes can be combined in a housing to form a so-called module.
• the two semiconductor elements are arranged in parallel, antiparallel or in series.
• two main connections are used, for example as anode and cathode
• connection led out of the housing.
• a third main connection is provided as a center tap.
• the main connections are in a row and the center tap is spatially arranged at the end of this row.
• This arrangement has the advantage that e.g. when using two modules, each with two semiconductor elements connected in series to build a full-wave rectifier bridge, the center taps for the connection of the AC lines are easily accessible.
• the internal structure of these semiconductor devices is known for example from DE-GM 75 12 573 and DE-OS 23 37 694.
• OMPI Wire cross-sections and also have different connection technologies, problems and additional costs arise when using such arrangements.
• the connections Gl and G2 are either 2.8 mm x 0.8 mm Faston connectors or circular connectors.
• the object of the invention is to improve the arrangement described at the outset such that the connection of the ignition lines for supplying the ignition pulses to the controllable semiconductor elements is facilitated.
• auxiliary cathode connections of the controllable semiconductor elements are led out of the housing as separate connections and that each of these auxiliary cathode connections and the control connection belonging to the same semiconductor element are adjacent, but relatively far from the nearest main connection, relative to their mutual distance is arranged.
• a control connection and an associated auxiliary cathode connection are preferably combined in a common socket.
• control connections and the associated auxiliary cathode connections can either be combined in a single, multi-pole socket or in several, two-pole sockets.
• Fig. 4 shows a side view of a semiconductor arrangement according to the invention with two thyristors
• FIG. 5 shows a section through the arrangement of FIG. 4 along the line V - V;
• Fig. 6 shows e 'ine plan view of the arrangement of Fig. 4;
• FIG. 7 shows an electrical equivalent circuit diagram of the arrangement according to FIG. 4.
• FIGS. ⁇ to 3 contains two thyristors connected in series in a common housing 11.
• a connection plate 10 On the top of the housing there is a connection plate 10, on which (from the left) a center tap A1K2, a cathode connection Kl and an anode lead A2 is arranged.
• anode connection In addition to the anode connection
• one of the two ignition pulse lines with the plug connection for the control electrodes Gl, G2, the other line must additionally be clamped to the associated cathode connection Kl, A1K2.
• Mounting holes 12 are provided for fastening the semiconductor arrangement to a base body or heat sink. Best way to carry out the invention '
• auxiliary cathode connections HK1 and HK2 are additionally provided directly next to the associated control connections G1 and G2.
• One control connection Gl, G2 and one auxiliary cathode connection HKT, HK2.- are located as pins in a socket 13 located in the connection plate 10 made of plastic, penetrating the bottom. '14 of the socket 13 and are connected to elements inside the housing through internal non-illustrated connecting lines with the Halbleiterele ⁇ .
• the ignition pulses are supplied via a double wire line (not shown) connected to a plug.
• the outer shape of the plug corresponds to the shape of the socket.
• controllable semiconductor element is arranged in a housing
• more than one socket is also provided.
• a multi-pole socket can optionally be provided.
• FIG. 7 shows the schematic internal structure of the semiconductor arrangement according to the invention.
• two thyri interference Thl, Th2 are connected in series.
• there are three main connections namely an anode connection A2 for the thyristor Th2, a cathode connection Kl for the thyristor Thl and a center tap A1K2 for the connection point between the two thyristors Thl, Th2.
• the cathodes of the two thyristors Thl and Th2 are additionally led out as auxiliary cathode connections and combined with the control connections in sockets 13.
• the semiconductor device according to the invention can be used as a module for the construction of converter circuits.

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Thyristors (AREA)
• Power Conversion In General (AREA)
• Electronic Switches (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=6689802

Family Applications (1)

Country Status (6)

Cited By (1)

Families Citing this family (4)

Family Cites Families (8)

• 1979
  • 1979-03-06 WO PCT/DE1979/000020 patent/WO1979000817A1/de not_active Ceased
  • 1979-03-06 JP JP50043979A patent/JPS55500163A/ja active Pending
  • 1979-03-06 GB GB7940326A patent/GB2036429B/en not_active Expired
  • 1979-03-06 US US06/175,208 patent/US4335392A/en not_active Expired - Lifetime
  • 1979-03-22 NL NL7902282A patent/NL7902282A/xx not_active Application Discontinuation
  • 1979-10-23 EP EP79900223A patent/EP0020336A1/de not_active Withdrawn

Non-Patent Citations (1)

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