EA201590727A1 - Пара электродов для плазменного процесса dbd - Google Patents
Пара электродов для плазменного процесса dbdInfo
- Publication number
- EA201590727A1 EA201590727A1 EA201590727A EA201590727A EA201590727A1 EA 201590727 A1 EA201590727 A1 EA 201590727A1 EA 201590727 A EA201590727 A EA 201590727A EA 201590727 A EA201590727 A EA 201590727A EA 201590727 A1 EA201590727 A1 EA 201590727A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- electrode
- counter
- electrodes
- substrate
- couple
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Изобретение касается устройства (10) для обработки поверхности подложки (1) посредством диэлектрического барьерного разряда, обеспечивающего возможность образования холодной нитевидной плазмы при атмосферном давлении, содержащего реакционную камеру, в которой расположены средства опоры и/или перемещения подложки (2), и по меньшей мере два электрода (3, 4), расположенные параллельно с каждой стороны средств опоры и/или перемещения подложки (2), из которых один электрод (3) предназначен для приведения к высокому напряжению, а противоэлектрод (4) подлежит заземлению. Оно отличается тем, что противоэлектрод (4) имеет ширину (l) и длину (L), соответственно, меньше ширины (l) и длины (L) электрода (3) и тем, что противоэлектрод (4) расположен так, чтобы он был заключен в ортогональной проекции (5) электрода (3) на плоскость, содержащую противоэлектрод (4). Изобретение также касается процесса обработки поверхности, в частности, для осаждения слоя, предусматривающего такое устройство.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12199080 | 2012-12-21 | ||
PCT/JP2013/007433 WO2014097621A1 (en) | 2012-12-21 | 2013-12-18 | Pair of electrodes for dbd plasma process |
Publications (2)
Publication Number | Publication Date |
---|---|
EA201590727A1 true EA201590727A1 (ru) | 2015-10-30 |
EA028651B1 EA028651B1 (ru) | 2017-12-29 |
Family
ID=47563099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EA201590727A EA028651B1 (ru) | 2012-12-21 | 2013-12-18 | Пара электродов для плазменного процесса диэлектрического барьерного разряда (дбр) |
Country Status (6)
Country | Link |
---|---|
US (1) | US10276352B2 (ru) |
EP (1) | EP2935648B1 (ru) |
JP (1) | JP2016509330A (ru) |
EA (1) | EA028651B1 (ru) |
PL (1) | PL2935648T3 (ru) |
WO (1) | WO2014097621A1 (ru) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6489998B2 (ja) * | 2015-11-13 | 2019-03-27 | 株式会社日本製鋼所 | プラズマ発生部およびプラズマスパッタ装置 |
KR101889826B1 (ko) * | 2016-11-07 | 2018-08-21 | 이동주 | 입체 처리물에 균일한 미세 필라멘트 방전을 발생시키는 장치 |
JP7159694B2 (ja) * | 2018-08-28 | 2022-10-25 | 日本電産株式会社 | プラズマ処理装置 |
JP2022530751A (ja) * | 2019-05-05 | 2022-07-01 | アルファテック インタナショナル リミテッド | プラズマ表面除菌剤とその方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6012734A (ja) * | 1983-07-01 | 1985-01-23 | Hitachi Ltd | プラズマ処理装置 |
JP2000054150A (ja) * | 1998-08-07 | 2000-02-22 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP3586197B2 (ja) * | 2000-03-23 | 2004-11-10 | シャープ株式会社 | 薄膜形成用プラズマ成膜装置 |
US20060118242A1 (en) * | 2001-02-12 | 2006-06-08 | Anthony Herbert | Atmospheric pressure plasma system |
JP4107000B2 (ja) | 2002-02-08 | 2008-06-25 | コニカミノルタホールディングス株式会社 | 電子写真感光体の製造方法及びそれにより製造された電子写真感光体、それを用いた画像形成装置、画像形成方法並びにプロセスカートリッジ |
US6744212B2 (en) * | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
JP4092937B2 (ja) * | 2002-04-11 | 2008-05-28 | 松下電工株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2004103423A (ja) * | 2002-09-10 | 2004-04-02 | Matsushita Electric Works Ltd | プラズマ処理方法及びプラズマ処理装置 |
JP2006080192A (ja) | 2004-09-08 | 2006-03-23 | Sharp Corp | プラズマプロセス装置 |
FR2912256A1 (fr) | 2007-02-06 | 2008-08-08 | Air Liquide | Appareil pour traitement de surface au moyen d'une decharge a barriere dielectrique dans un gaz |
FR2923945A1 (fr) | 2007-11-21 | 2009-05-22 | Air Liquide | Procede et dispositif de production d'une decharge homogene sur substrats non isolants |
JP5597551B2 (ja) | 2008-02-01 | 2014-10-01 | フジフィルム マニュファクチュアリング ヨーロッパ ビー.ヴィ. | 移動基材のプラズマ表面処理の装置、方法および当該方法の使用 |
JP2009228032A (ja) * | 2008-03-19 | 2009-10-08 | Sanyo Electric Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
EP2145978A1 (fr) | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Procédé et installation pour le dépôt de couches sur un substrat |
US9887069B2 (en) * | 2008-12-19 | 2018-02-06 | Lam Research Corporation | Controlling ion energy distribution in plasma processing systems |
JP2011067779A (ja) * | 2009-09-28 | 2011-04-07 | Toyota Motor Corp | 放電反応器 |
EP2326151A1 (fr) * | 2009-11-24 | 2011-05-25 | AGC Glass Europe | Procédé et dispositif de polarisation d'une électrode DBD |
WO2011134978A1 (fr) | 2010-04-30 | 2011-11-03 | Agc Glass Europe | Electrode pour procede plasma dbd |
JP5853487B2 (ja) * | 2010-08-19 | 2016-02-09 | 東レ株式会社 | 放電電極及び放電方法 |
GB201117242D0 (en) * | 2011-10-06 | 2011-11-16 | Fujifilm Mfg Europe Bv | Method and device for manufacturing a barrier layer on a flexible subtrate |
-
2013
- 2013-12-18 US US14/654,341 patent/US10276352B2/en not_active Expired - Fee Related
- 2013-12-18 WO PCT/JP2013/007433 patent/WO2014097621A1/en active Application Filing
- 2013-12-18 PL PL13818466T patent/PL2935648T3/pl unknown
- 2013-12-18 JP JP2015529350A patent/JP2016509330A/ja not_active Ceased
- 2013-12-18 EP EP13818466.8A patent/EP2935648B1/en active Active
- 2013-12-18 EA EA201590727A patent/EA028651B1/ru not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2014097621A1 (en) | 2014-06-26 |
JP2016509330A (ja) | 2016-03-24 |
PL2935648T3 (pl) | 2020-10-05 |
US10276352B2 (en) | 2019-04-30 |
EP2935648A1 (en) | 2015-10-28 |
US20150348759A1 (en) | 2015-12-03 |
EP2935648B1 (en) | 2019-08-28 |
EA028651B1 (ru) | 2017-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EA201590727A1 (ru) | Пара электродов для плазменного процесса dbd | |
JP5913745B2 (ja) | 粉末プラズマ処理装置 | |
WO2016186501A3 (en) | Electrode arrangement for a dielectric barrier discharge plasma treatment | |
WO2011006018A3 (en) | Apparatus and method for plasma processing | |
AR092067A1 (es) | Disposicion de electrodo para un plasma impedido | |
FR2918293B1 (fr) | Traitement de gaz par plasma de surface | |
MX342014B (es) | Desinfeccion de articulos empacados. | |
MX2016002317A (es) | Modificacion de iones. | |
JP2009054996A5 (ru) | ||
WO2018229724A3 (de) | Vorrichtung und verfahren zur ionisation eines analyten sowie vorrichtung und verfahren zur analyse eines ionisierten analyten | |
TW200717596A (en) | Substrate treatment device and electrode member | |
EA201290431A1 (ru) | Способ и устройство для поляризации разрядного диэлектрического барьерного электрода | |
MX359728B (es) | Fuentes de ionizacion de descarga de barrera dielectrica para espectrometria. | |
JP2014082354A5 (ru) | ||
IN2015DN00370A (ru) | ||
WO2014137905A3 (en) | Method and apparatus for plasma dicing a semi-conductor wafer | |
BR112015002657A8 (pt) | aparelho e método para o revestimento por plasma de um substrato, em particular de uma placa de prensa | |
WO2012097904A3 (de) | Dielektrische koplanarentladungsquelle für eine oberflächenbehandlung unter atmosphärendruck | |
EA201491038A1 (ru) | Нетепловая плазменная ячейка | |
JP2012227398A5 (ru) | ||
TWM469617U (zh) | 法拉第遮罩裝置 | |
WO2013130149A3 (en) | Gas treatment using surface plasma and devices therefrom | |
JP2013225059A5 (ru) | ||
JP2015023157A5 (ru) | ||
KR102450392B1 (ko) | 스퍼터링 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PD4A | Registration of transfer of a eurasian patent in accordance with the succession in title | ||
MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ BY KZ KG TJ TM |