EA201590727A1 - Пара электродов для плазменного процесса dbd - Google Patents

Пара электродов для плазменного процесса dbd

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Publication number
EA201590727A1
EA201590727A1 EA201590727A EA201590727A EA201590727A1 EA 201590727 A1 EA201590727 A1 EA 201590727A1 EA 201590727 A EA201590727 A EA 201590727A EA 201590727 A EA201590727 A EA 201590727A EA 201590727 A1 EA201590727 A1 EA 201590727A1
Authority
EA
Eurasian Patent Office
Prior art keywords
electrode
counter
electrodes
substrate
couple
Prior art date
Application number
EA201590727A
Other languages
English (en)
Other versions
EA028651B1 (ru
Inventor
М. Эрик Тиксон
М. Эрик Мишель
М. Жозеф Леклерк
Original Assignee
Асахи Гласс Компани Лимитед
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Асахи Гласс Компани Лимитед filed Critical Асахи Гласс Компани Лимитед
Publication of EA201590727A1 publication Critical patent/EA201590727A1/ru
Publication of EA028651B1 publication Critical patent/EA028651B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

Изобретение касается устройства (10) для обработки поверхности подложки (1) посредством диэлектрического барьерного разряда, обеспечивающего возможность образования холодной нитевидной плазмы при атмосферном давлении, содержащего реакционную камеру, в которой расположены средства опоры и/или перемещения подложки (2), и по меньшей мере два электрода (3, 4), расположенные параллельно с каждой стороны средств опоры и/или перемещения подложки (2), из которых один электрод (3) предназначен для приведения к высокому напряжению, а противоэлектрод (4) подлежит заземлению. Оно отличается тем, что противоэлектрод (4) имеет ширину (l) и длину (L), соответственно, меньше ширины (l) и длины (L) электрода (3) и тем, что противоэлектрод (4) расположен так, чтобы он был заключен в ортогональной проекции (5) электрода (3) на плоскость, содержащую противоэлектрод (4). Изобретение также касается процесса обработки поверхности, в частности, для осаждения слоя, предусматривающего такое устройство.
EA201590727A 2012-12-21 2013-12-18 Пара электродов для плазменного процесса диэлектрического барьерного разряда (дбр) EA028651B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12199080 2012-12-21
PCT/JP2013/007433 WO2014097621A1 (en) 2012-12-21 2013-12-18 Pair of electrodes for dbd plasma process

Publications (2)

Publication Number Publication Date
EA201590727A1 true EA201590727A1 (ru) 2015-10-30
EA028651B1 EA028651B1 (ru) 2017-12-29

Family

ID=47563099

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201590727A EA028651B1 (ru) 2012-12-21 2013-12-18 Пара электродов для плазменного процесса диэлектрического барьерного разряда (дбр)

Country Status (6)

Country Link
US (1) US10276352B2 (ru)
EP (1) EP2935648B1 (ru)
JP (1) JP2016509330A (ru)
EA (1) EA028651B1 (ru)
PL (1) PL2935648T3 (ru)
WO (1) WO2014097621A1 (ru)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6489998B2 (ja) * 2015-11-13 2019-03-27 株式会社日本製鋼所 プラズマ発生部およびプラズマスパッタ装置
KR101889826B1 (ko) * 2016-11-07 2018-08-21 이동주 입체 처리물에 균일한 미세 필라멘트 방전을 발생시키는 장치
JP7159694B2 (ja) * 2018-08-28 2022-10-25 日本電産株式会社 プラズマ処理装置
KR20220016857A (ko) * 2019-05-05 2022-02-10 알파테크 인터내셔널 리미티드 플라즈마 표면 살균기 및 관련 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012734A (ja) * 1983-07-01 1985-01-23 Hitachi Ltd プラズマ処理装置
JP2000054150A (ja) * 1998-08-07 2000-02-22 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP3586197B2 (ja) * 2000-03-23 2004-11-10 シャープ株式会社 薄膜形成用プラズマ成膜装置
US20060118242A1 (en) * 2001-02-12 2006-06-08 Anthony Herbert Atmospheric pressure plasma system
JP4107000B2 (ja) * 2002-02-08 2008-06-25 コニカミノルタホールディングス株式会社 電子写真感光体の製造方法及びそれにより製造された電子写真感光体、それを用いた画像形成装置、画像形成方法並びにプロセスカートリッジ
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
JP4092937B2 (ja) * 2002-04-11 2008-05-28 松下電工株式会社 プラズマ処理装置及びプラズマ処理方法
JP2004103423A (ja) * 2002-09-10 2004-04-02 Matsushita Electric Works Ltd プラズマ処理方法及びプラズマ処理装置
JP2006080192A (ja) * 2004-09-08 2006-03-23 Sharp Corp プラズマプロセス装置
FR2912256A1 (fr) * 2007-02-06 2008-08-08 Air Liquide Appareil pour traitement de surface au moyen d'une decharge a barriere dielectrique dans un gaz
FR2923945A1 (fr) * 2007-11-21 2009-05-22 Air Liquide Procede et dispositif de production d'une decharge homogene sur substrats non isolants
US8702999B2 (en) 2008-02-01 2014-04-22 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
JP2009228032A (ja) * 2008-03-19 2009-10-08 Sanyo Electric Co Ltd プラズマ処理方法及びプラズマ処理装置
EP2145978A1 (fr) 2008-07-16 2010-01-20 AGC Flat Glass Europe SA Procédé et installation pour le dépôt de couches sur un substrat
US9887069B2 (en) * 2008-12-19 2018-02-06 Lam Research Corporation Controlling ion energy distribution in plasma processing systems
JP2011067779A (ja) * 2009-09-28 2011-04-07 Toyota Motor Corp 放電反応器
EP2326151A1 (fr) * 2009-11-24 2011-05-25 AGC Glass Europe Procédé et dispositif de polarisation d'une électrode DBD
WO2011134978A1 (fr) 2010-04-30 2011-11-03 Agc Glass Europe Electrode pour procede plasma dbd
JP5853487B2 (ja) * 2010-08-19 2016-02-09 東レ株式会社 放電電極及び放電方法
GB201117242D0 (en) * 2011-10-06 2011-11-16 Fujifilm Mfg Europe Bv Method and device for manufacturing a barrier layer on a flexible subtrate

Also Published As

Publication number Publication date
EP2935648B1 (en) 2019-08-28
WO2014097621A1 (en) 2014-06-26
PL2935648T3 (pl) 2020-10-05
US10276352B2 (en) 2019-04-30
EA028651B1 (ru) 2017-12-29
EP2935648A1 (en) 2015-10-28
US20150348759A1 (en) 2015-12-03
JP2016509330A (ja) 2016-03-24

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MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

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