EA201492201A1 - Системы и способы осаждения кремния с применением механического псевдоожижения - Google Patents

Системы и способы осаждения кремния с применением механического псевдоожижения

Info

Publication number
EA201492201A1
EA201492201A1 EA201492201A EA201492201A EA201492201A1 EA 201492201 A1 EA201492201 A1 EA 201492201A1 EA 201492201 A EA201492201 A EA 201492201A EA 201492201 A EA201492201 A EA 201492201A EA 201492201 A1 EA201492201 A1 EA 201492201A1
Authority
EA
Eurasian Patent Office
Prior art keywords
tray
systems
mechanical
pediativation
sedimentation
Prior art date
Application number
EA201492201A
Other languages
English (en)
Russian (ru)
Inventor
Марк В. Дассель
Девид А. Бресслер
Original Assignee
Рокстар Текнолоджиз Ллс
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Рокстар Текнолоджиз Ллс filed Critical Рокстар Текнолоджиз Ллс
Publication of EA201492201A1 publication Critical patent/EA201492201A1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/0015—Feeding of the particles in the reactor; Evacuation of the particles out of the reactor
    • B01J8/003—Feeding of the particles in the reactor; Evacuation of the particles out of the reactor in a downward flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1809—Controlling processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1836—Heating and cooling the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1872—Details of the fluidised bed reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/26—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with two or more fluidised beds, e.g. reactor and regeneration installations
    • B01J8/28—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with two or more fluidised beds, e.g. reactor and regeneration installations the one above the other
    • B01J8/30—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with two or more fluidised beds, e.g. reactor and regeneration installations the one above the other the edge of a lower bed projecting beyond the edge of the superjacent bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/40—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed subjected to vibrations or pulsations
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00026—Controlling or regulating the heat exchange system
    • B01J2208/00035—Controlling or regulating the heat exchange system involving measured parameters
    • B01J2208/00044—Temperature measurement
    • B01J2208/00061—Temperature measurement of the reactants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00026—Controlling or regulating the heat exchange system
    • B01J2208/00035—Controlling or regulating the heat exchange system involving measured parameters
    • B01J2208/0007—Pressure measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00106—Controlling the temperature by indirect heat exchange
    • B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
    • B01J2208/00176—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles outside the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00522—Controlling the temperature using inert heat absorbing solids outside the bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00539—Pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00654—Controlling the process by measures relating to the particulate material
    • B01J2208/00672—Particle size selection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00743—Feeding or discharging of solids
    • B01J2208/00761—Discharging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00743—Feeding or discharging of solids
    • B01J2208/00769—Details of feeding or discharging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00191—Control algorithm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Chemical Vapour Deposition (AREA)
  • Glanulating (AREA)
EA201492201A 2012-05-25 2013-05-09 Системы и способы осаждения кремния с применением механического псевдоожижения EA201492201A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/481,548 US8871153B2 (en) 2012-05-25 2012-05-25 Mechanically fluidized silicon deposition systems and methods
PCT/US2013/040398 WO2013176902A1 (en) 2012-05-25 2013-05-09 Mechanically fluidized silicon deposition systems and methods

Publications (1)

Publication Number Publication Date
EA201492201A1 true EA201492201A1 (ru) 2015-03-31

Family

ID=49621816

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201492201A EA201492201A1 (ru) 2012-05-25 2013-05-09 Системы и способы осаждения кремния с применением механического псевдоожижения

Country Status (11)

Country Link
US (2) US8871153B2 (cg-RX-API-DMAC10.html)
EP (1) EP2855006A4 (cg-RX-API-DMAC10.html)
JP (1) JP2015523199A (cg-RX-API-DMAC10.html)
KR (1) KR101760167B1 (cg-RX-API-DMAC10.html)
CN (2) CN105797656A (cg-RX-API-DMAC10.html)
BR (1) BR112014029408A2 (cg-RX-API-DMAC10.html)
CA (1) CA2873631A1 (cg-RX-API-DMAC10.html)
EA (1) EA201492201A1 (cg-RX-API-DMAC10.html)
IN (1) IN2014DN10188A (cg-RX-API-DMAC10.html)
TW (1) TW201404917A (cg-RX-API-DMAC10.html)
WO (1) WO2013176902A1 (cg-RX-API-DMAC10.html)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
KR101436409B1 (ko) * 2013-01-11 2014-09-01 후성정공 주식회사 나노복합소재 제조용 복합 가스 제조장치
KR101559204B1 (ko) * 2013-09-16 2015-10-13 대진대학교 산학협력단 원자층 증착기술을 이용한 코어-쉘 구조의 나노 입자 코팅장치
KR20180025838A (ko) * 2014-12-23 2018-03-09 시텍 게엠베하 기계적으로 유동화되는 증착 시스템들 및 방법들
CA2972658A1 (en) * 2014-12-30 2016-07-07 Sitec Gmbh Crystal production systems and methods
US20170096224A1 (en) * 2015-10-06 2017-04-06 Itamar Marom Vehicle seat sleeping device
US10582667B2 (en) * 2015-10-12 2020-03-10 Applied Quantum Energies, Llc Methods and apparatuses for treating agricultural matter
DE102015224099A1 (de) * 2015-12-02 2017-06-08 Wacker Chemie Ag Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat
JP6813824B2 (ja) * 2016-02-05 2021-01-13 国立大学法人山形大学 酸化物薄膜形成方法及び酸化物薄膜形成装置
CN105568254B (zh) * 2016-02-24 2018-10-30 清华大学 一种用于流化床化学气相沉积反应器的气体入口设备
WO2017172745A1 (en) * 2016-03-30 2017-10-05 Sitec Gmbh Mechanically vibrated packed bed reactor and related methods
CN109689929B (zh) * 2016-09-16 2022-09-30 皮考逊公司 通过原子层沉积(ald)进行颗粒涂覆
US20180207647A1 (en) * 2017-01-25 2018-07-26 James A. Yanez Gold panning machine
KR101990683B1 (ko) * 2017-07-14 2019-06-18 고려대학교 산학협력단 원자층 증착 공정용 챔버
CN111279015B (zh) 2017-08-24 2022-05-24 福吉纳米有限公司 合成、功能化、表面处理和/或封装粉末的制造工艺及其应用
KR102607682B1 (ko) * 2021-04-05 2023-11-30 엔티엠 주식회사 전지용 전극제 표면처리 공정 시스템
KR20230014469A (ko) * 2021-07-21 2023-01-30 주식회사 소로나 파우더 코팅 방법 및 장치
TW202432241A (zh) 2022-10-13 2024-08-16 荷蘭商Asm Ip私人控股有限公司 蒸氣遞送設備、氣相反應器及用於監測及控制蒸氣遞送系統之方法
CN120193246A (zh) 2023-12-21 2025-06-24 中微半导体设备(上海)股份有限公司 一种气相沉积设备冷却系统及气相沉积设备

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369478A (en) * 1941-04-25 1945-02-13 Universal Oil Prod Co Reactor
US2856273A (en) * 1953-12-28 1958-10-14 Pure Oil Co Apparatus for low velocity fluidization
DE1061593B (de) 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3011877A (en) 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
NL251143A (cg-RX-API-DMAC10.html) 1959-05-04
US3161483A (en) 1960-02-15 1964-12-15 Rex Chainbelt Inc Vibrating fluidized systems
US3585268A (en) 1968-01-04 1971-06-15 Owens Illinois Inc Metal-lined glass melter
US3640767A (en) 1969-05-16 1972-02-08 Rca Corp Encapsulated magnetic memory element
US3963838A (en) 1974-05-24 1976-06-15 Texas Instruments Incorporated Method of operating a quartz fluidized bed reactor for the production of silicon
DE2620739A1 (de) 1976-05-11 1977-12-01 Wacker Chemitronic Verfahren zur herstellung von hochreinem silicium
JPS53106626A (en) 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
US4179530A (en) 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
JPS546892A (en) 1977-06-20 1979-01-19 Minoru Tanmachi Method and apparatus for regenerating active carbon
US4271783A (en) 1978-01-20 1981-06-09 General Electric Company Apparatus for fluidized bed-electrostatic coating of indefinite length substrate
DE2912661C2 (de) 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4628838A (en) 1980-11-19 1986-12-16 Peabody Engineering Corp. Fluidized bed combustion method
US4354987A (en) 1981-03-31 1982-10-19 Union Carbide Corporation Consolidation of high purity silicon powder
DE3141906A1 (de) 1981-10-08 1983-04-21 Degussa Ag, 6000 Frankfurt Verfahren und vorrichtung zur durchfuehrung von gas/feststoff-reaktionen, insbesondere zum aktivieren und reaktivieren von aktivkohle
US4543399A (en) 1982-03-24 1985-09-24 Union Carbide Corporation Fluidized bed reaction systems
US4440108A (en) 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
JPS59115736A (ja) 1982-12-23 1984-07-04 Toshiba Corp シリコン顆粒供給装置
US4606941A (en) 1983-07-21 1986-08-19 Jenkin William C Deposition metalizing bulk material by chemical vapor
JPH0622689B2 (ja) 1986-02-24 1994-03-30 中央化工機株式会社 恒温装置
JPS63270394A (ja) 1987-04-28 1988-11-08 Showa Denko Kk 流動式ダイヤモンド合成方法及び合成装置
JPS6414194A (en) * 1987-07-09 1989-01-18 Showa Denko Kk Method and device for synthesizing diamond by fluidized system
JP2637134B2 (ja) 1988-01-21 1997-08-06 昭和電工株式会社 気相法ダイヤモンドの合成法
US5118485A (en) 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
JPH05246786A (ja) * 1991-07-02 1993-09-24 L'air Liquide コア粉体の存在下で化学蒸着法により珪素ベース超微粒子をコア粉に均一に塗布する方法
JPH063866A (ja) 1992-06-19 1994-01-14 Mitsubishi Kasei Corp 静電荷像現像用コートキャリアの製造法
JPH06127924A (ja) 1992-10-16 1994-05-10 Tonen Chem Corp 多結晶シリコンの製造方法
JP3103227B2 (ja) 1992-12-09 2000-10-30 株式会社日立製作所 半導体装置の製造方法
US6190625B1 (en) 1997-08-07 2001-02-20 Qualchem, Inc. Fluidized-bed roasting of molybdenite concentrates
US6015597A (en) 1997-11-26 2000-01-18 3M Innovative Properties Company Method for coating diamond-like networks onto particles
JP4196959B2 (ja) 2004-05-20 2008-12-17 セイコーエプソン株式会社 電気光学装置及びその駆動回路並びに電子機器
FR2872061B1 (fr) 2004-06-23 2007-04-27 Toulouse Inst Nat Polytech Composition solide divisee formee de grains a depot metallique atomique continu et son procede d'obtention
KR100813131B1 (ko) * 2006-06-15 2008-03-17 한국화학연구원 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법
BR112013008352A2 (pt) 2010-10-07 2017-03-01 W Dassel Mark métodos e sistemas de reator mecanicamente fluidificados, apropriados para a produção de silício
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods

Also Published As

Publication number Publication date
CN104540581A (zh) 2015-04-22
WO2013176902A1 (en) 2013-11-28
KR20150021501A (ko) 2015-03-02
EP2855006A4 (en) 2016-03-02
JP2015523199A (ja) 2015-08-13
EP2855006A1 (en) 2015-04-08
IN2014DN10188A (cg-RX-API-DMAC10.html) 2015-08-21
US8871153B2 (en) 2014-10-28
US20130316077A1 (en) 2013-11-28
TW201404917A (zh) 2014-02-01
CN105797656A (zh) 2016-07-27
CN104540581B (zh) 2016-12-07
KR101760167B1 (ko) 2017-07-20
US9365929B2 (en) 2016-06-14
BR112014029408A2 (pt) 2017-06-27
US20150010702A1 (en) 2015-01-08
CA2873631A1 (en) 2013-11-28

Similar Documents

Publication Publication Date Title
UA112063C2 (uk) Реакторні системи механічного псевдозрідження шару й способи, придатні для виробництва кремнію
IN2014DN10188A (cg-RX-API-DMAC10.html)
GB2514986A (en) Methods of transferring discrete articles
IL231849A0 (en) Process line for the production of freeze-dried particles
EP2970605A4 (en) METHOD FOR NETWORKING POLYMER COMPOSITIONS USING ATMOSPHERIC OXYGEN
UA109198C2 (ru) Катализаторы
MX2014003979A (es) Nucleosidos, nucleotidos, y acidos nucleicos modificados, y usos de los mismos.
EP2847202A4 (en) METHOD FOR TREATING LIGNOCELLULOSE MATERIALS
SG11201406266UA (en) Process for the production of xylenes and light olefins from heavy aromatics
BR112014027989A2 (pt) processo multi-etapas para produção de modulador imunológico
MX2015000120A (es) Aislados de proteina de papa.
DK2964592T3 (da) Proces til katalytisk fremstilling af dieselbrændstof
MY169483A (en) Solvolysis of biomass using solvent from a bioreforming process
DE112012005134A5 (de) Verfahren und Verfahren und Vorrichtung zur industriellen Herstellung von photovoltaischen Konzentratormodulen
EP2940196A4 (en) METHOD FOR PRODUCING A SIC INCINERATE FROM N-TYPE
GB201100531D0 (en) Functionalised materials, processes for the production and uses thereof
FR2984012B1 (fr) Appareil pour la production industrielle de modules concentrateurs photovoltaiques
EP2759529A4 (en) PROCESS FOR PREPARING 1-PALMITOYL-3-ACETYLGLYCEROL AND PROCESS FOR PREPARING 1-PALMITOYL-2-LINOLEOYL-3-ACETYLGLYCEROL THEREWITH
EP2962756A4 (en) CATALYST FOR OLEFIN MULTIMERIZATION AND METHOD FOR PRODUCING AN OLEFIN MULTIMER IN THE PRESENCE OF A CATALYST FOR OLEFIN MULTIMERIZATION
EP2546862A4 (en) PARTICLE SOURCE AND DEVICE FOR USING THE PARTICLE SOURCE
EP2771917B8 (de) Thermoelement, herstellungsverfahren und für die durchführung des verfahrens geeignetes substrat
MY182732A (en) Process for immobilization of a lipase
CL2014002860A1 (es) Producto sinterizado hecho de carburo de silicio denso; y su proceso de fabricacion.
EP2987770A4 (en) METHOD FOR PRODUCING POLYMER CARBON NITRIDE IN NANOSHEETS
WO2012129065A3 (en) Process to improve formulations of hydrocarbon conversion catalysts through removal and modification of detrimental particles and reuse of modified fractions