DK3734644T3 - Styringsfremgangsmåde til rekombinationslevetider - Google Patents

Styringsfremgangsmåde til rekombinationslevetider Download PDF

Info

Publication number
DK3734644T3
DK3734644T3 DK18895298.0T DK18895298T DK3734644T3 DK 3734644 T3 DK3734644 T3 DK 3734644T3 DK 18895298 T DK18895298 T DK 18895298T DK 3734644 T3 DK3734644 T3 DK 3734644T3
Authority
DK
Denmark
Prior art keywords
control procedure
recombination lifetimes
lifetimes
recombination
procedure
Prior art date
Application number
DK18895298.0T
Other languages
English (en)
Inventor
Hiroshi Takeno
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Application granted granted Critical
Publication of DK3734644T3 publication Critical patent/DK3734644T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DK18895298.0T 2017-12-28 2018-12-10 Styringsfremgangsmåde til rekombinationslevetider DK3734644T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017254431A JP6881292B2 (ja) 2017-12-28 2017-12-28 再結合ライフタイムの制御方法
PCT/JP2018/045201 WO2019131074A1 (ja) 2017-12-28 2018-12-10 再結合ライフタイムの制御方法

Publications (1)

Publication Number Publication Date
DK3734644T3 true DK3734644T3 (da) 2024-06-17

Family

ID=67063563

Family Applications (1)

Application Number Title Priority Date Filing Date
DK18895298.0T DK3734644T3 (da) 2017-12-28 2018-12-10 Styringsfremgangsmåde til rekombinationslevetider

Country Status (5)

Country Link
EP (1) EP3734644B1 (da)
JP (1) JP6881292B2 (da)
CN (1) CN111512421B (da)
DK (1) DK3734644T3 (da)
WO (1) WO2019131074A1 (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230335410A1 (en) * 2020-12-15 2023-10-19 Mitsubishi Electric Corporation Semiconductor device manufacturing method, and semiconductor device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3211874B2 (ja) 1997-10-29 2001-09-25 サンケン電気株式会社 半導体装置の製造方法
JP4288797B2 (ja) 1998-11-05 2009-07-01 株式会社デンソー 半導体装置の製造方法
JP2002110687A (ja) * 2000-10-02 2002-04-12 Wacker Nsce Corp シリコン半導体基板
WO2007055352A1 (ja) 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
JP5072460B2 (ja) * 2006-09-20 2012-11-14 ジルトロニック アクチエンゲゼルシャフト 半導体用シリコンウエハ、およびその製造方法
JP5428216B2 (ja) * 2008-06-20 2014-02-26 富士電機株式会社 シリコンウェハ、半導体装置、シリコンウェハの製造方法および半導体装置の製造方法
EP2800143B1 (en) 2011-12-28 2020-04-08 Fuji Electric Co., Ltd. Semiconductor device and method for producing semiconductor device
US9029243B2 (en) * 2012-10-08 2015-05-12 Infineon Technologies Ag Method for producing a semiconductor device and field-effect semiconductor device
JP6083412B2 (ja) * 2014-04-01 2017-02-22 信越半導体株式会社 再結合ライフタイムの制御方法及びシリコン基板の製造方法
JP6292131B2 (ja) * 2015-01-07 2018-03-14 信越半導体株式会社 シリコン基板の選別方法
JP6459987B2 (ja) 2016-01-08 2019-01-30 信越半導体株式会社 シリコン単結晶の製造方法

Also Published As

Publication number Publication date
CN111512421A (zh) 2020-08-07
EP3734644A4 (en) 2021-09-29
EP3734644B1 (en) 2024-05-22
EP3734644A1 (en) 2020-11-04
WO2019131074A1 (ja) 2019-07-04
JP2019121657A (ja) 2019-07-22
CN111512421B (zh) 2023-08-29
JP6881292B2 (ja) 2021-06-02

Similar Documents

Publication Publication Date Title
MA49549A (fr) Auto-injecteur
DK3621229T3 (da) Fremgangsmåde til delvis retransmission
DK2997550T4 (da) Fremgangsmåde til adgangskontrol
DK3072835T3 (da) Fremgangsmåde til fremføring
DK3197356T3 (da) Fremgangsmåde til modusomkobling
DK3614596T3 (da) Uplink-signalering til dobbeltkonnektivitet
DK3509893T3 (da) Fremgangsmåde til roaming
DK3166537T3 (da) Fremgangsmåde til design af et individuelt tilpasset implantat
DK3352625T3 (da) Reorganiserbar liggestol til flere formål, flere anvendelser
CL2015002272S1 (es) Alojamiento para control remoto.
DK3126373T3 (da) Fremgangsmåde til fremstilling af amg 416
DK3125898T3 (da) Farmakofor til trail-induktion
DK3065510T3 (da) Aktive faders til styring af preview
DK3172634T3 (da) Reguleringsarmatur
DK3385802T3 (da) Styresystem til mekanisk udstyr
DK3347776T4 (da) Opsætning af ventilstyreenhed
DK3606936T3 (da) Fremgangsmåde til indvinding
DK3377275T3 (da) Kontrolsystem til selvkørende platforme
BR112017023662A2 (pt) métodos de controle de percevejos.
GB201502729D0 (en) Dither free bias control
DK3250521T3 (da) Brænder til undervandsforbrændingssmelteovn
DK3148993T3 (da) Fremgangsmåde til fremstilling af thiazolderivater
DK3621042T3 (da) Kontrolfremgangsmåde
DK3199809T3 (da) Kontrolfremgangsmåde til et kompressorsystem
DK3655755T3 (en) Effektorapparat til vandpotentiale i jord