DK3583247T3 - Fremgangsmåde og anlæg til trækning af en enkrystal ifølge fz-fremgangsmåden - Google Patents
Fremgangsmåde og anlæg til trækning af en enkrystal ifølge fz-fremgangsmåden Download PDFInfo
- Publication number
- DK3583247T3 DK3583247T3 DK18705135.4T DK18705135T DK3583247T3 DK 3583247 T3 DK3583247 T3 DK 3583247T3 DK 18705135 T DK18705135 T DK 18705135T DK 3583247 T3 DK3583247 T3 DK 3583247T3
- Authority
- DK
- Denmark
- Prior art keywords
- procedure
- single crystal
- crystal according
- crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017202420.8A DE102017202420A1 (de) | 2017-02-15 | 2017-02-15 | Verfahren und Anlage zum Ziehen eines Einkristalls nach dem FZ-Verfahren |
| PCT/EP2018/053481 WO2018149798A1 (de) | 2017-02-15 | 2018-02-13 | Verfahren und anlage zum ziehen eines einkristalls nach dem fz-verfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK3583247T3 true DK3583247T3 (da) | 2020-11-30 |
Family
ID=61223908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK18705135.4T DK3583247T3 (da) | 2017-02-15 | 2018-02-13 | Fremgangsmåde og anlæg til trækning af en enkrystal ifølge fz-fremgangsmåden |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10988856B2 (da) |
| EP (1) | EP3583247B1 (da) |
| JP (1) | JP6900512B2 (da) |
| KR (1) | KR102198127B1 (da) |
| CN (1) | CN110291230B (da) |
| DE (1) | DE102017202420A1 (da) |
| DK (1) | DK3583247T3 (da) |
| TW (1) | TWI664325B (da) |
| WO (1) | WO2018149798A1 (da) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022149310A (ja) * | 2021-03-25 | 2022-10-06 | Tdk株式会社 | 結晶製造方法、結晶製造装置、及び単結晶 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6337004A (ja) | 1986-07-30 | 1988-02-17 | 極東開発工業株式会社 | 塵芥収集車の制御装置 |
| JP3601280B2 (ja) * | 1997-12-25 | 2004-12-15 | 信越半導体株式会社 | Ｆｚ法による半導体単結晶の製造方法 |
| JP4016363B2 (ja) | 1998-07-28 | 2007-12-05 | 信越半導体株式会社 | 浮遊溶融帯域制御装置及び制御方法 |
| WO2008125104A1 (en) | 2007-04-13 | 2008-10-23 | Topsil Simiconductor Materials A/S | Method and apparatus for producing a single crystal |
| JP2010076979A (ja) | 2008-09-26 | 2010-04-08 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Ｆｚ法半導体単結晶製造時の測量方法、測量システム、ｆｚ法半導体単結晶製造時の制御方法、制御システム |
| CN101525764B (zh) | 2009-04-16 | 2010-12-08 | 峨嵋半导体材料研究所 | 一种真空区熔高阻硅单晶的制备方法 |
| JP2011037640A (ja) * | 2009-08-06 | 2011-02-24 | Canon Machinery Inc | 単結晶育成装置及び単結晶育成方法 |
| DE102009052745A1 (de) | 2009-11-11 | 2011-05-12 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
| JP2011157239A (ja) | 2010-02-03 | 2011-08-18 | Toyota Motor Corp | シリコン単結晶の製造方法およびシリコン単結晶のインゴット |
| DE102010040464A1 (de) * | 2010-09-09 | 2012-03-15 | Wacker Chemie Ag | Verfahren zur Herstellung eines versetzungsfreien einkristallinen Stabes aus Silicium |
| CN102220629B (zh) | 2011-07-25 | 2013-02-13 | 天津市环欧半导体材料技术有限公司 | 一种采用直径法控制区熔晶体自动生长方法及系统 |
| JP5768764B2 (ja) | 2012-05-30 | 2015-08-26 | 信越半導体株式会社 | 半導体単結晶棒の製造方法 |
| DE102012108009B4 (de) * | 2012-08-30 | 2016-09-01 | Topsil Semiconductor Materials A/S | Modellprädiktive Regelung des Zonenschmelz-Verfahrens |
| DE102012022965B4 (de) | 2012-11-19 | 2018-12-06 | Forschungsverbund Berlin E.V. | Vorrichtung für das tiegelfreie Zonenziehen von Kristallstäben |
| CN103436951A (zh) | 2013-08-27 | 2013-12-11 | 天津市环欧半导体材料技术有限公司 | 一种区熔硅单晶的拉制方法 |
| JP6318938B2 (ja) | 2014-07-17 | 2018-05-09 | 株式会社Sumco | 単結晶の製造方法及び製造装置 |
-
2017
- 2017-02-15 DE DE102017202420.8A patent/DE102017202420A1/de not_active Withdrawn
-
2018
- 2018-02-05 TW TW107104041A patent/TWI664325B/zh active
- 2018-02-13 KR KR1020197023233A patent/KR102198127B1/ko active IP Right Grant
- 2018-02-13 EP EP18705135.4A patent/EP3583247B1/de active Active
- 2018-02-13 CN CN201880011568.XA patent/CN110291230B/zh active Active
- 2018-02-13 US US16/473,401 patent/US10988856B2/en active Active
- 2018-02-13 JP JP2019565057A patent/JP6900512B2/ja active Active
- 2018-02-13 WO PCT/EP2018/053481 patent/WO2018149798A1/de unknown
- 2018-02-13 DK DK18705135.4T patent/DK3583247T3/da active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110291230A (zh) | 2019-09-27 |
| JP2020507554A (ja) | 2020-03-12 |
| DE102017202420A1 (de) | 2018-08-16 |
| EP3583247B1 (de) | 2020-09-09 |
| KR102198127B1 (ko) | 2021-01-05 |
| KR20190104384A (ko) | 2019-09-09 |
| TW201831740A (zh) | 2018-09-01 |
| WO2018149798A1 (de) | 2018-08-23 |
| CN110291230B (zh) | 2021-09-03 |
| US20200149183A1 (en) | 2020-05-14 |
| EP3583247A1 (de) | 2019-12-25 |
| JP6900512B2 (ja) | 2021-07-07 |
| US10988856B2 (en) | 2021-04-27 |
| TWI664325B (zh) | 2019-07-01 |
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