DK298578A - Fremgangsmaade til fremstilling af et sintret polykrystallinsk kompakt af kubisk bornitrid kompakt af kubisk bornitrid fremgangsmaade til fremstilling af et varmeledende materiale varmeleder til brug i elektronisk udstyr kompakt af krystalliter af krystalliter af kubisk bornitrid og fremgangsmaade til fremstilling heraf - Google Patents
Fremgangsmaade til fremstilling af et sintret polykrystallinsk kompakt af kubisk bornitrid kompakt af kubisk bornitrid fremgangsmaade til fremstilling af et varmeledende materiale varmeleder til brug i elektronisk udstyr kompakt af krystalliter af krystalliter af kubisk bornitrid og fremgangsmaade til fremstilling herafInfo
- Publication number
- DK298578A DK298578A DK298578A DK298578A DK298578A DK 298578 A DK298578 A DK 298578A DK 298578 A DK298578 A DK 298578A DK 298578 A DK298578 A DK 298578A DK 298578 A DK298578 A DK 298578A
- Authority
- DK
- Denmark
- Prior art keywords
- boron nitride
- cubic boron
- compact
- crystal
- liter
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
- C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Ceramic Products (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/812,283 US4188194A (en) | 1976-10-29 | 1977-07-01 | Direct conversion process for making cubic boron nitride from pyrolytic boron nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK298578A true DK298578A (da) | 1979-01-02 |
Family
ID=25209106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK298578A DK298578A (da) | 1977-07-01 | 1978-06-30 | Fremgangsmaade til fremstilling af et sintret polykrystallinsk kompakt af kubisk bornitrid kompakt af kubisk bornitrid fremgangsmaade til fremstilling af et varmeledende materiale varmeleder til brug i elektronisk udstyr kompakt af krystalliter af krystalliter af kubisk bornitrid og fremgangsmaade til fremstilling heraf |
Country Status (20)
| Country | Link |
|---|---|
| JP (1) | JPS5433510A (ko) |
| AT (1) | AT395144B (ko) |
| AU (1) | AU524584B2 (ko) |
| BE (1) | BE868653A (ko) |
| BR (1) | BR7804310A (ko) |
| CH (1) | CH644091A5 (ko) |
| DE (1) | DE2828742A1 (ko) |
| DK (1) | DK298578A (ko) |
| ES (1) | ES471333A1 (ko) |
| FR (1) | FR2395948A1 (ko) |
| GB (1) | GB2002333B (ko) |
| IE (1) | IE47548B1 (ko) |
| IL (1) | IL54939A0 (ko) |
| IN (1) | IN150013B (ko) |
| IT (1) | IT1096850B (ko) |
| MX (1) | MX149093A (ko) |
| NL (1) | NL186506C (ko) |
| NO (1) | NO153603C (ko) |
| SE (1) | SE447241B (ko) |
| ZA (1) | ZA783449B (ko) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4289503A (en) * | 1979-06-11 | 1981-09-15 | General Electric Company | Polycrystalline cubic boron nitride abrasive and process for preparing same in the absence of catalyst |
| DE3125484A1 (de) * | 1981-06-29 | 1983-03-17 | Belorusskij politechničeskij institut, Minsk | Verfahren zur herstellung von polykristallen eines aus dichten modifikationen bestehenden bornitrides |
| DE3229846C2 (de) * | 1982-08-11 | 1984-05-24 | Dr. Johannes Heidenhain Gmbh, 8225 Traunreut | Längen- oder Winkelmeßeinrichtung |
| DE3584515D1 (de) * | 1985-01-11 | 1991-11-28 | Sumitomo Electric Industries | Waermesenke unter verwendung eines gesinterten koerpers mit hoher waermeleitfaehigkeit und verfahren zu ihrer herstellung. |
| EP0221531A3 (en) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | High heat conductive insulated substrate and method of manufacturing the same |
| JPS62108717A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108715A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108716A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108711A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108714A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108713A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| EP0240913B1 (en) * | 1986-04-09 | 1991-11-27 | Sumitomo Electric Industries, Ltd. | Method of manufacturing sintered compact of cubic boron nitride |
| JPH0339795U (ko) * | 1989-04-19 | 1991-04-17 | ||
| US5015265A (en) * | 1989-06-14 | 1991-05-14 | General Electric Company | Process for making cubic boron nitride from coated hexagonal boron nitride, and abrasive particles and articles made therefrom |
| JPH07104739A (ja) * | 1993-10-01 | 1995-04-21 | Maruyasu Kanagata:Kk | 大正琴 |
| JPH10158065A (ja) * | 1996-11-28 | 1998-06-16 | Sumitomo Electric Ind Ltd | 立方晶窒化ホウ素焼結体およびその製造方法 |
| CN101965643A (zh) * | 2007-12-31 | 2011-02-02 | 拉斐尔·纳坦·克雷曼 | 高效率硅基太阳能电池 |
| US20090169781A1 (en) * | 2007-12-31 | 2009-07-02 | Marc Schaepkens | Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom |
| EP2942341B1 (en) | 2011-08-30 | 2020-11-18 | Sumitomo Electric Industries, Ltd. | Cubic boron nitride complex polycrystalline substance, method for manufacturing same, cutting tool, wire-drawing die, and grinding tool |
| JP6159064B2 (ja) * | 2012-08-08 | 2017-07-05 | 住友電気工業株式会社 | 立方晶窒化ホウ素複合多結晶体及び切削工具、線引きダイス、ならびに研削工具 |
| JP5929655B2 (ja) * | 2012-09-11 | 2016-06-08 | 住友電気工業株式会社 | 立方晶窒化ホウ素複合多結晶体およびその製造方法、切削工具、ならびに耐摩工具 |
| JP6291995B2 (ja) | 2014-04-18 | 2018-03-14 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| JP6447197B2 (ja) | 2015-02-04 | 2019-01-09 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| JP6447205B2 (ja) | 2015-02-09 | 2019-01-09 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| US11066334B2 (en) | 2016-06-29 | 2021-07-20 | Schlumberger Technology Corporation | Binderless cBN sintering with cubic press |
| WO2018066261A1 (ja) | 2016-10-06 | 2018-04-12 | 住友電気工業株式会社 | 窒化ホウ素多結晶体の製造方法、窒化ホウ素多結晶体、切削工具、耐摩工具および研削工具 |
| JP6744014B2 (ja) * | 2018-06-18 | 2020-08-19 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| CN112752737B (zh) * | 2018-09-27 | 2023-01-10 | 住友电工硬质合金株式会社 | 多晶立方氮化硼及其制造方法 |
| EP3932890A4 (en) * | 2019-02-28 | 2022-04-27 | Sumitomo Electric Hardmetal Corp. | POLYCRYSTALLINE CUBIC BORON NITRIDE AND METHOD FOR PRODUCTION |
| WO2020174923A1 (ja) | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| WO2020174922A1 (ja) * | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| WO2023027122A1 (ja) * | 2021-08-26 | 2023-03-02 | デンカ株式会社 | セラミックス板の製造方法、セラミックス板、複合シート、及び積層基板 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3578403A (en) * | 1968-07-05 | 1971-05-11 | Union Carbide Corp | Recrystallization of pyrolytic boron nitride |
| DE2111180C3 (de) * | 1971-03-09 | 1973-10-11 | Institut Fisiki Twojordowo Tela I Poluprowodnikow Akademii Nauk Belorusskoj Ssr, Minsk (Sowjetunion) | Verfahren zur Herstellung von kubi schem Bornitrid |
| ZA724056B (en) * | 1971-07-01 | 1973-03-28 | Gen Electric | Catalyst systems for synthesis of cubic boron nitride |
| JPS5238049B2 (ko) * | 1972-02-04 | 1977-09-27 | ||
| JPS5647124B2 (ko) * | 1973-06-26 | 1981-11-07 | ||
| IE39632B1 (en) * | 1973-09-06 | 1978-11-22 | Gen Electric | Production of high-density boron nitride |
| JPS5760676B2 (ko) * | 1973-09-28 | 1982-12-21 | Tokyo Shibaura Electric Co | |
| JPS5061413A (ko) * | 1973-10-01 | 1975-05-27 | ||
| JPS5750677Y2 (ko) * | 1973-12-05 | 1982-11-05 | ||
| JPS5116196A (ja) * | 1974-07-29 | 1976-02-09 | Hitachi Ltd | Kokanyorotsukakuketsusokusochi |
-
1978
- 1978-06-14 IN IN657/CAL/78A patent/IN150013B/en unknown
- 1978-06-15 ZA ZA783449A patent/ZA783449B/xx unknown
- 1978-06-16 IL IL7854939A patent/IL54939A0/xx not_active IP Right Cessation
- 1978-06-29 GB GB7828248A patent/GB2002333B/en not_active Expired
- 1978-06-29 AU AU37619/78A patent/AU524584B2/en not_active Expired
- 1978-06-30 FR FR7819597A patent/FR2395948A1/fr active Granted
- 1978-06-30 BR BR7804310A patent/BR7804310A/pt unknown
- 1978-06-30 MX MX174019A patent/MX149093A/es unknown
- 1978-06-30 IE IE1320/78A patent/IE47548B1/en not_active IP Right Cessation
- 1978-06-30 AT AT0477478A patent/AT395144B/de not_active IP Right Cessation
- 1978-06-30 IT IT25186/78A patent/IT1096850B/it active
- 1978-06-30 DK DK298578A patent/DK298578A/da not_active Application Discontinuation
- 1978-06-30 ES ES471333A patent/ES471333A1/es not_active Expired
- 1978-06-30 CH CH719678A patent/CH644091A5/de not_active IP Right Cessation
- 1978-06-30 DE DE19782828742 patent/DE2828742A1/de active Granted
- 1978-06-30 SE SE7807437A patent/SE447241B/sv not_active IP Right Cessation
- 1978-06-30 JP JP7877378A patent/JPS5433510A/ja active Granted
- 1978-06-30 NO NO782272A patent/NO153603C/no unknown
- 1978-06-30 BE BE189003A patent/BE868653A/xx not_active IP Right Cessation
- 1978-07-03 NL NLAANVRAGE7807196,A patent/NL186506C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL186506B (nl) | 1990-07-16 |
| DE2828742A1 (de) | 1979-03-01 |
| FR2395948B1 (ko) | 1984-03-23 |
| IN150013B (ko) | 1982-06-26 |
| SE447241B (sv) | 1986-11-03 |
| BE868653A (fr) | 1978-10-16 |
| ES471333A1 (es) | 1979-10-01 |
| DE2828742C2 (ko) | 1989-02-02 |
| CH644091A5 (de) | 1984-07-13 |
| AT395144B (de) | 1992-09-25 |
| BR7804310A (pt) | 1979-04-17 |
| GB2002333B (en) | 1982-05-26 |
| NO153603C (no) | 1986-04-23 |
| NL186506C (nl) | 1990-12-17 |
| IT1096850B (it) | 1985-08-26 |
| AU524584B2 (en) | 1982-09-23 |
| ZA783449B (en) | 1980-04-30 |
| IT7825186A0 (it) | 1978-06-30 |
| IE781320L (en) | 1979-01-01 |
| AU3761978A (en) | 1980-01-03 |
| MX149093A (es) | 1983-08-24 |
| NO782272L (no) | 1979-01-03 |
| JPS63394B2 (ko) | 1988-01-06 |
| ATA477478A (de) | 1992-02-15 |
| FR2395948A1 (fr) | 1979-01-26 |
| NO153603B (no) | 1986-01-13 |
| IL54939A0 (en) | 1978-08-31 |
| NL7807196A (nl) | 1979-01-03 |
| IE47548B1 (en) | 1984-04-18 |
| GB2002333A (en) | 1979-02-21 |
| JPS5433510A (en) | 1979-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AHS | Application shelved for other reasons than non-payment |