DK2425685T3 - In-situ-plasma/laser-hybridsystem - Google Patents
In-situ-plasma/laser-hybridsystem Download PDFInfo
- Publication number
- DK2425685T3 DK2425685T3 DK10770480.1T DK10770480T DK2425685T3 DK 2425685 T3 DK2425685 T3 DK 2425685T3 DK 10770480 T DK10770480 T DK 10770480T DK 2425685 T3 DK2425685 T3 DK 2425685T3
- Authority
- DK
- Denmark
- Prior art keywords
- plasma
- precursor
- cathode
- plasma device
- layer
- Prior art date
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- 239000002243 precursor Substances 0.000 claims description 78
- 238000000576 coating method Methods 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 36
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- 239000007788 liquid Substances 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 19
- 238000011065 in-situ storage Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
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- 229910001416 lithium ion Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
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- 239000002086 nanomaterial Substances 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
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- 239000000203 mixture Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910032387 LiCoO2 Inorganic materials 0.000 description 2
- 229910052493 LiFePO4 Inorganic materials 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N Vanadium(V) oxide Inorganic materials O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 239000002904 solvent Substances 0.000 description 2
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- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910006174 NixCo1−2xMnx Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
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- 238000000427 thin-film deposition Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/3478—Geometrical details
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Coating By Spraying Or Casting (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Claims (15)
1. Jævnstrømsplasmasindretning, omfattende: et hus (12); en katode (14, 14'), der er anbragt i huset (12); en ringformet kanal (18), der generelt anbringes grænsende op til katoden (14, 14'), hvor den ringformede kanal (18) er konfigureret til at overføre en plasmagas (20) som fluid; en anode (16), der er anbragt driftsmæssigt grænsende op til katoden (14, 14') for at tillade en elektrisk kommunikation derimellem, som er tilstrækkelig til at antænde en plasmastråle (24) i plasmagassen (20); en prækursorkilde, som indeholder et prækursormateriale; en prækursorudledningsledning (30), som strækker sig gennem mindst en del af katoden (14, 14'), hvor prækursorudledningsledningen (30) afsluttes ved mindst én åbning (34), hvor plasmastrålen (24) er i stand til at medføre, smelte og afsætte i det mindst en del af prækursormaterialerne på et mål; kendetegnet ved, at den mindst én åbning (34) er forskudt fra en spids (28) af katoden (14, 14') for generelt at forhindre afsætning af prækursormateria-let ved spidsen (28) af katoden (14,14').
2. Jævnstrømsplasmasindretning ifølge krav 1, hvor den mindst én åbning (34) er forskudt opstrøms for spidsen (28) af katoden (14, 14') og uden for plasmastrålen (24).
3. Jævnstrømsplasmasindretning ifølge krav 1, hvor den mindst én åbning (34) er forskudt nedstrøms for spidsen (28) og strækker sig ud over spidsen (28) og ind i plasmastrålen (24).
4. Jævnstrømsplasmasindretning ifølge krav 1, hvor prækursormaterialet omfatter nanopartikler.
5. Jævnstrømsplasmasindretning ifølge krav 1, hvor prækursormaterialet er et pulver.
6. Jævnstrømsplasmasindretning ifølge krav 1, yderligere omfattende: en dyse (48), gennem hvilken plasmastrålen (24) overføres.
7. Jævnstrømsplasmasindretning ifølge krav 6, hvor dysen (48) er cirkulær, ellipseformet eller rektangulær.
8. Jævnstrømsplasmasindretning ifølge krav 1, hvor en prækursorudledningsenhed er funktionsmæssigt tilkoblet ved en position nedstrøms foranoden (16), hvor prækursorudledningsenheden modtager prækursormaterialet fra prækursorkilden og forstøver prækursormaterialet sammen med en gas ind i plasmastrålen (24).
9. Jævnstrømsplasmasindretning ifølge krav 1 eller 8, yderligere omfattende: en laserkilde (50), som udleder strålingsenergi på målet efter afsætning af i det mindste en del af prækursormaterialerne.
10. Jævnstrømsplasmasindretning ifølge krav 9, hvor laserkilden (50) ændrer en fortætning af mindst en del af prækursormaterialerne, der er afsat på målet.
11. Jævnstrømsplasmasindretning ifølge krav 1 eller 8, hvor prækursormaterialet er en væske eller en gas.
12. Fremgangsmåde til dannelse af en coating på et mål under anvendelse af en indretning (10) ifølge krav 1, hvor fremgangsmåden omfatter: afsætning af et første lag på et mål under anvendelse af jævnstrømsplasmaindretningen ved at sprøjte et plasma, som har indlagte prækursorer; omsmeltning af mindst en del af det første lag under anvendelse af en laserkilde for at opnå in-situ-fortætning deraf.
13. Fremgangsmåde ifølge krav 12, yderligere omfattende: afsætning af et andet lag på det fortættede første lag af målet under anvendelse af jævnstrømsplasmaindretningen ved at sprøjte plasmaet med de indlagte prækursorer.
14. Fremgangsmåde ifølge krav 13, yderligere omfattende: omsmeltning af mindst en del af det andet lag under anvendelse af en laserkilde (50) for at opnå in-situ-fortætning deraf.
15. Fremgangsmåde ifølge krav 12, hvor en laserstrålebølgelængde og effekt af laserkilden (50) udvælges til at graduere tykkelsen på tværs af det første lag for at forbedre varmechokbestandigheden.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17457609P | 2009-05-01 | 2009-05-01 | |
| US23386309P | 2009-08-14 | 2009-08-14 | |
| PCT/US2010/033383 WO2010127344A2 (en) | 2009-05-01 | 2010-05-03 | In-situ plasma/laser hybrid scheme |
| US12/772,342 US8294060B2 (en) | 2009-05-01 | 2010-05-03 | In-situ plasma/laser hybrid scheme |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2425685T3 true DK2425685T3 (en) | 2017-01-30 |
Family
ID=43032818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK10770480.1T DK2425685T3 (en) | 2009-05-01 | 2010-05-03 | In-situ-plasma/laser-hybridsystem |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8294060B2 (da) |
| EP (1) | EP2425685B1 (da) |
| KR (1) | KR20120036817A (da) |
| CN (1) | CN102450108B (da) |
| AU (1) | AU2010242747B2 (da) |
| CA (1) | CA2760612A1 (da) |
| DK (1) | DK2425685T3 (da) |
| ES (1) | ES2607704T3 (da) |
| NZ (1) | NZ596174A (da) |
| WO (1) | WO2010127344A2 (da) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010526986A (ja) | 2007-05-11 | 2010-08-05 | エスディーシー マテリアルズ インコーポレイテッド | 熱交換器、冷却装置及び冷却方法 |
| US8507401B1 (en) | 2007-10-15 | 2013-08-13 | SDCmaterials, Inc. | Method and system for forming plug and play metal catalysts |
| NZ600491A (en) * | 2009-12-04 | 2014-09-26 | Univ Michigan | Coaxial laser assisted cold spray nozzle |
| US8652992B2 (en) | 2009-12-15 | 2014-02-18 | SDCmaterials, Inc. | Pinning and affixing nano-active material |
| US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
| US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
| US8803025B2 (en) * | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
| US9090475B1 (en) | 2009-12-15 | 2015-07-28 | SDCmaterials, Inc. | In situ oxide removal, dispersal and drying for silicon SiO2 |
| US8557727B2 (en) | 2009-12-15 | 2013-10-15 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
| US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
| US9309619B2 (en) * | 2011-06-28 | 2016-04-12 | Mtix Ltd. | Method and apparatus for surface treatment of materials utilizing multiple combined energy sources |
| US9605376B2 (en) * | 2011-06-28 | 2017-03-28 | Mtix Ltd. | Treating materials with combined energy sources |
| KR20140071364A (ko) | 2011-08-19 | 2014-06-11 | 에스디씨머티리얼스, 인코포레이티드 | 촉매작용에 사용하기 위한 코팅 기판 및 촉매 변환기 및 기판을 워시코트 조성물로 코팅하는 방법 |
| ZA201202480B (en) * | 2011-10-17 | 2012-11-28 | Int Advanced Res Centre For Power Metallurgy And New Mat (Arci) Dept Of Science And Tech Govt Of Ind | An improved hybrid methodology for producing composite,multi-layered and graded coatings by plasma spraying utitilizing powder and solution precurrsor feedstock |
| US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| US9586179B2 (en) | 2013-07-25 | 2017-03-07 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters and methods of making and using same |
| EP3060335A4 (en) | 2013-10-22 | 2017-07-19 | SDCMaterials, Inc. | Catalyst design for heavy-duty diesel combustion engines |
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| US10730798B2 (en) * | 2014-05-07 | 2020-08-04 | Applied Materials, Inc. | Slurry plasma spray of plasma resistant ceramic coating |
| GB201409692D0 (en) * | 2014-05-31 | 2014-07-16 | Element Six Gmbh | Thermal spray assembly and method for using it |
| DE102014219275A1 (de) * | 2014-09-24 | 2016-03-24 | Siemens Aktiengesellschaft | Zündung von Flammen eines elektropositiven Metalls durch Plasmatisierung des Reaktionsgases |
| CN105376921A (zh) * | 2015-12-11 | 2016-03-02 | 武汉科技大学 | 一种等离子加工用的内腔供粉钨针 |
| WO2017119326A1 (ja) * | 2016-01-05 | 2017-07-13 | 株式会社Ｈｅｌｉｘ | 渦水流発生器、水プラズマ発生装置、分解処理装置、分解処理装置搭載車両及び分解処理方法 |
| US20170291856A1 (en) * | 2016-04-06 | 2017-10-12 | Applied Materials, Inc. | Solution precursor plasma spray of ceramic coating for semiconductor chamber applications |
| US20220361313A1 (en) * | 2019-09-30 | 2022-11-10 | Tocalo Co., Ltd. | Low pressure plasma spraying |
| CN111100979B (zh) * | 2019-12-26 | 2021-06-22 | 上海联影医疗科技股份有限公司 | X射线管阳极靶盘的激光冲击强化方法 |
| CN113049256B (zh) * | 2019-12-27 | 2025-03-28 | 北航（四川）西部国际创新港科技有限公司 | 一种模拟航空发动机服役环境的高温高速焰流发生装置 |
| CN116711095A (zh) | 2021-01-11 | 2023-09-05 | 6K有限公司 | 使用微波等离子体处理用于回收锂离子阴极材料的方法和系统 |
| EP4281215A4 (en) * | 2021-01-19 | 2025-04-30 | 6K Inc. | SINGLE CRYSTAL CATHODE MATERIALS USING MICROWAVE PLASMA PROCESSING |
| US12525599B2 (en) | 2021-12-21 | 2026-01-13 | Our Next Energy, Inc. | Manufacturing battery electrodes |
| CN115537737B (zh) * | 2022-10-13 | 2023-11-17 | 西南交通大学 | 一种薄涂层的制备方法及系统 |
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2010
- 2010-05-03 KR KR1020117028861A patent/KR20120036817A/ko not_active Ceased
- 2010-05-03 US US12/772,342 patent/US8294060B2/en active Active
- 2010-05-03 CN CN201080024186.4A patent/CN102450108B/zh active Active
- 2010-05-03 WO PCT/US2010/033383 patent/WO2010127344A2/en not_active Ceased
- 2010-05-03 DK DK10770480.1T patent/DK2425685T3/en active
- 2010-05-03 ES ES10770480.1T patent/ES2607704T3/es active Active
- 2010-05-03 AU AU2010242747A patent/AU2010242747B2/en active Active
- 2010-05-03 NZ NZ596174A patent/NZ596174A/xx unknown
- 2010-05-03 CA CA2760612A patent/CA2760612A1/en not_active Abandoned
- 2010-05-03 EP EP10770480.1A patent/EP2425685B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010127344A2 (en) | 2010-11-04 |
| US20100320176A1 (en) | 2010-12-23 |
| CN102450108B (zh) | 2014-08-20 |
| ES2607704T3 (es) | 2017-04-03 |
| KR20120036817A (ko) | 2012-04-18 |
| CA2760612A1 (en) | 2010-11-04 |
| EP2425685A2 (en) | 2012-03-07 |
| NZ596174A (en) | 2013-07-26 |
| EP2425685B1 (en) | 2016-10-26 |
| WO2010127344A3 (en) | 2011-01-13 |
| AU2010242747B2 (en) | 2014-03-20 |
| EP2425685A4 (en) | 2014-11-26 |
| AU2010242747A1 (en) | 2011-11-24 |
| US8294060B2 (en) | 2012-10-23 |
| CN102450108A (zh) | 2012-05-09 |
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