DK1988632T3 - Styring af en elektrisk halvlederomskifter - Google Patents

Styring af en elektrisk halvlederomskifter

Info

Publication number
DK1988632T3
DK1988632T3 DK08075321.3T DK08075321T DK1988632T3 DK 1988632 T3 DK1988632 T3 DK 1988632T3 DK 08075321 T DK08075321 T DK 08075321T DK 1988632 T3 DK1988632 T3 DK 1988632T3
Authority
DK
Denmark
Prior art keywords
voltage
gate control
control voltage
power semiconductor
semiconductor switch
Prior art date
Application number
DK08075321.3T
Other languages
English (en)
Inventor
Merilinna Paavo
Original Assignee
Vacon Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vacon Oyj filed Critical Vacon Oyj
Application granted granted Critical
Publication of DK1988632T3 publication Critical patent/DK1988632T3/da

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Electronic Switches (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
DK08075321.3T 2007-04-30 2008-04-29 Styring af en elektrisk halvlederomskifter DK1988632T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20070337A FI120812B (fi) 2007-04-30 2007-04-30 Tehopuolijohdekytkimen ohjaus

Publications (1)

Publication Number Publication Date
DK1988632T3 true DK1988632T3 (da) 2010-09-06

Family

ID=38009874

Family Applications (1)

Application Number Title Priority Date Filing Date
DK08075321.3T DK1988632T3 (da) 2007-04-30 2008-04-29 Styring af en elektrisk halvlederomskifter

Country Status (6)

Country Link
US (1) US20080266727A1 (da)
EP (1) EP1988632B1 (da)
AT (1) ATE467950T1 (da)
DE (1) DE602008001196D1 (da)
DK (1) DK1988632T3 (da)
FI (1) FI120812B (da)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090212843A1 (en) * 2008-02-25 2009-08-27 Infineon Technologies Ag Semiconductor device arrangement and method
US9825625B2 (en) 2014-07-09 2017-11-21 CT-Concept Technologie GmbH Multi-stage gate turn-off with dynamic timing
GB2532215A (en) * 2014-11-11 2016-05-18 Reinhausen Maschf Scheubeck Gate boost
CN107748313B (zh) * 2017-10-16 2019-12-03 华北电力大学 基于与或逻辑的识别hbsm-mmc内部短路故障的方法
CN110233470A (zh) * 2019-06-05 2019-09-13 浙江正泰电器股份有限公司 变频器
DE102020202842A1 (de) * 2020-03-05 2021-09-09 Robert Bosch Gesellschaft mit beschränkter Haftung Treiberschaltung für ein niederinduktives Leistungsmodul sowie ein niederinduktives Leistungsmodul mit erhöhter Kurzschlussfestigkeit
CN111697957B (zh) * 2020-06-17 2024-03-12 上海电气集团股份有限公司 一种应用于绝缘栅双极型晶体管igbt的驱动电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2669117B2 (ja) * 1990-07-19 1997-10-27 富士電機株式会社 電圧駆動形半導体素子の駆動回路
JPH04156268A (ja) * 1990-10-16 1992-05-28 Toshiba Corp ゲート制御回路
US5444591A (en) * 1993-04-01 1995-08-22 International Rectifier Corporation IGBT fault current limiting circuit
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
CA2172890C (en) * 1995-06-06 2005-02-22 Harold R. Schnetzka Switch driver circuit
JP3421507B2 (ja) 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
US6275093B1 (en) 1998-02-25 2001-08-14 Intersil Corporation IGBT gate drive circuit with short circuit protection
DE10020981B4 (de) * 1999-04-30 2004-04-29 International Rectifier Corp., El Segundo Motor-Steuergerät mit Fehlerschutzschaltung
US6459324B1 (en) * 2000-10-23 2002-10-01 International Rectifier Corporation Gate drive circuit with feedback-controlled active resistance
JP3886876B2 (ja) * 2002-01-17 2007-02-28 三菱電機株式会社 電力用半導体素子の駆動回路
JP4779549B2 (ja) * 2005-10-04 2011-09-28 富士電機株式会社 電圧駆動型半導体素子のゲート駆動回路。

Also Published As

Publication number Publication date
FI20070337A (fi) 2008-10-31
US20080266727A1 (en) 2008-10-30
EP1988632B1 (en) 2010-05-12
DE602008001196D1 (de) 2010-06-24
EP1988632A1 (en) 2008-11-05
ATE467950T1 (de) 2010-05-15
FI120812B (fi) 2010-03-15
FI20070337A0 (fi) 2007-04-30

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