DK122220B - Fremgangsmåde til fremstilling af filamentformede siliciumcarbidkrystaller. - Google Patents
Fremgangsmåde til fremstilling af filamentformede siliciumcarbidkrystaller.Info
- Publication number
- DK122220B DK122220B DK621167AA DK621167A DK122220B DK 122220 B DK122220 B DK 122220B DK 621167A A DK621167A A DK 621167AA DK 621167 A DK621167 A DK 621167A DK 122220 B DK122220 B DK 122220B
- Authority
- DK
- Denmark
- Prior art keywords
- filamentous
- production
- silicon carbide
- carbide crystals
- crystals
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D39/00—Filtering material for liquid or gaseous fluids
- B01D39/02—Loose filtering material, e.g. loose fibres
- B01D39/06—Inorganic material, e.g. asbestos fibres, glass beads or fibres
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62227—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining fibres
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
- Y10S264/19—Inorganic fiber
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL666617544A NL143436B (nl) | 1966-12-14 | 1966-12-14 | Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen. |
NL6703609A NL6703609A (da) | 1967-03-08 | 1967-03-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK122220B true DK122220B (da) | 1972-02-07 |
Family
ID=26644120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK621167AA DK122220B (da) | 1966-12-14 | 1967-12-12 | Fremgangsmåde til fremstilling af filamentformede siliciumcarbidkrystaller. |
Country Status (13)
Country | Link |
---|---|
US (2) | US3721732A (da) |
JP (1) | JPS5411280B1 (da) |
AT (2) | AT294772B (da) |
BE (2) | BE707877A (da) |
CH (2) | CH520076A (da) |
DE (2) | DE1667657C3 (da) |
DK (1) | DK122220B (da) |
ES (2) | ES348181A1 (da) |
FR (2) | FR1547963A (da) |
GB (2) | GB1213156A (da) |
NL (1) | NL143436B (da) |
NO (1) | NO123641B (da) |
SE (1) | SE334868B (da) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL143436B (nl) * | 1966-12-14 | 1974-10-15 | Philips Nv | Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen. |
NL7005963A (da) * | 1970-04-24 | 1971-10-26 | ||
US4582561A (en) * | 1979-01-25 | 1986-04-15 | Sharp Kabushiki Kaisha | Method for making a silicon carbide substrate |
US4382837A (en) * | 1981-06-30 | 1983-05-10 | International Business Machines Corporation | Epitaxial crystal fabrication of SiC:AlN |
JPS599220A (ja) * | 1982-06-30 | 1984-01-18 | Shin Etsu Chem Co Ltd | 炭化けい素繊維の製造方法 |
CA1275088A (en) * | 1985-12-30 | 1990-10-09 | Peter D. Shalek | Prealloyed catalyst for growing silicon carbide whiskers |
US4789537A (en) * | 1985-12-30 | 1988-12-06 | The United States Of America As Represented By The United States Department Of Energy | Prealloyed catalyst for growing silicon carbide whiskers |
US4702901A (en) * | 1986-03-12 | 1987-10-27 | The United States Of America As Represented By The United States Department Of Energy | Process for growing silicon carbide whiskers by undercooling |
US4911781A (en) * | 1987-05-05 | 1990-03-27 | The Standard Oil Company | VLS Fiber growth process |
US5404836A (en) * | 1989-02-03 | 1995-04-11 | Milewski; John V. | Method and apparatus for continuous controlled production of single crystal whiskers |
US4971834A (en) * | 1989-06-29 | 1990-11-20 | Therm Incorporated | Process for preparing precursor for silicon carbide whiskers |
US5055276A (en) * | 1989-11-15 | 1991-10-08 | Huckins Harold A | Ceramic whisker growing system |
US5207263A (en) * | 1989-12-26 | 1993-05-04 | Bp America Inc. | VLS silicon carbide whisker reinforced metal matrix composites |
FR2658839B1 (fr) * | 1990-02-23 | 1997-06-20 | Thomson Csf | Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes. |
JP2821061B2 (ja) * | 1992-05-22 | 1998-11-05 | 電気化学工業株式会社 | 単結晶の製造方法 |
JP3769739B2 (ja) * | 1994-11-17 | 2006-04-26 | 住友電気工業株式会社 | 多孔質セラミックス膜及びその製造方法 |
SE9502288D0 (sv) * | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
US6030661A (en) * | 1995-08-04 | 2000-02-29 | Abb Research Ltd. | Device and a method for epitaxially growing objects by CVD |
AU4055297A (en) * | 1996-08-08 | 1998-02-25 | William Marsh Rice University | Macroscopically manipulable nanoscale devices made from nanotube assemblies |
US20040206008A1 (en) * | 2001-07-16 | 2004-10-21 | Chien-Min Sung | SiCN compositions and methods |
US6632477B2 (en) | 2001-07-16 | 2003-10-14 | Chien-Min Sung | SiCN compositions and methods |
US7449065B1 (en) | 2006-12-02 | 2008-11-11 | Ohio Aerospace Institute | Method for the growth of large low-defect single crystals |
US9803296B2 (en) | 2014-02-18 | 2017-10-31 | Advanced Ceramic Fibers, Llc | Metal carbide fibers and methods for their manufacture |
US8940391B2 (en) * | 2010-10-08 | 2015-01-27 | Advanced Ceramic Fibers, Llc | Silicon carbide fibers and articles including same |
US9275762B2 (en) | 2010-10-08 | 2016-03-01 | Advanced Ceramic Fibers, Llc | Cladding material, tube including such cladding material and methods of forming the same |
US10208238B2 (en) | 2010-10-08 | 2019-02-19 | Advanced Ceramic Fibers, Llc | Boron carbide fiber reinforced articles |
US9199227B2 (en) | 2011-08-23 | 2015-12-01 | Advanced Ceramic Fibers, Llc | Methods of producing continuous boron carbide fibers |
US10954167B1 (en) | 2010-10-08 | 2021-03-23 | Advanced Ceramic Fibers, Llc | Methods for producing metal carbide materials |
CN102534796B (zh) * | 2011-12-21 | 2014-11-05 | 西安交通大学 | 一种纯α碳化硅晶须的制备方法 |
US10793478B2 (en) | 2017-09-11 | 2020-10-06 | Advanced Ceramic Fibers, Llc. | Single phase fiber reinforced ceramic matrix composites |
DE102018100681A1 (de) * | 2018-01-12 | 2019-07-18 | Universität Paderborn | Verfahren zum Herstellen von Siliziumcarbid |
DE102018100679A1 (de) * | 2018-01-12 | 2019-07-18 | Universität Paderborn | Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid |
CN108286074B (zh) * | 2018-01-26 | 2020-10-16 | 山东大学 | 一种大尺寸SiC单晶生长装置及其工作方法 |
CN113479855B (zh) * | 2021-07-26 | 2022-11-22 | 武汉科技大学 | 一种利用体相层状过渡金属硫化物制备非层状二维过渡金属化合物的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3053635A (en) * | 1960-09-26 | 1962-09-11 | Clevite Corp | Method of growing silicon carbide crystals |
US3346414A (en) * | 1964-01-28 | 1967-10-10 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
NL6615376A (da) * | 1966-11-01 | 1968-05-02 | ||
US3493431A (en) * | 1966-11-25 | 1970-02-03 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
NL143436B (nl) * | 1966-12-14 | 1974-10-15 | Philips Nv | Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen. |
-
1966
- 1966-12-14 NL NL666617544A patent/NL143436B/xx unknown
-
1967
- 1967-12-11 NO NO170923A patent/NO123641B/no unknown
- 1967-12-11 CH CH1743167A patent/CH520076A/de not_active IP Right Cessation
- 1967-12-12 DE DE1667657A patent/DE1667657C3/de not_active Expired
- 1967-12-12 GB GB56404/67D patent/GB1213156A/en not_active Expired
- 1967-12-12 DK DK621167AA patent/DK122220B/da unknown
- 1967-12-12 AT AT1119067A patent/AT294772B/de not_active IP Right Cessation
- 1967-12-12 ES ES348181A patent/ES348181A1/es not_active Expired
- 1967-12-12 BE BE707877D patent/BE707877A/xx unknown
- 1967-12-13 FR FR132062A patent/FR1547963A/fr not_active Expired
- 1967-12-13 SE SE17117/67A patent/SE334868B/xx unknown
- 1967-12-13 JP JP7960567A patent/JPS5411280B1/ja active Pending
-
1968
- 1968-03-05 DE DE19681719493 patent/DE1719493A1/de active Pending
- 1968-03-05 GB GB00592/68A patent/GB1213867A/en not_active Expired
- 1968-03-05 AT AT213068A patent/AT299124B/de not_active IP Right Cessation
- 1968-03-05 CH CH324268A patent/CH505647A/de not_active IP Right Cessation
- 1968-03-06 ES ES351307A patent/ES351307A1/es not_active Expired
- 1968-03-07 US US00711349A patent/US3721732A/en not_active Expired - Lifetime
- 1968-03-08 BE BE711956D patent/BE711956A/xx unknown
- 1968-03-08 FR FR1556128D patent/FR1556128A/fr not_active Expired
-
1975
- 1975-07-25 US US05/599,087 patent/US4013503A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ES351307A1 (es) | 1969-06-01 |
US3721732A (en) | 1973-03-20 |
ES348181A1 (es) | 1969-06-16 |
AT299124B (de) | 1972-06-12 |
CH520076A (de) | 1972-03-15 |
DE1719493A1 (de) | 1971-09-02 |
GB1213867A (en) | 1970-11-25 |
NO123641B (da) | 1971-12-27 |
NL6617544A (da) | 1968-06-17 |
BE711956A (da) | 1968-09-09 |
GB1213156A (en) | 1970-11-18 |
CH505647A (de) | 1971-04-15 |
SE334868B (da) | 1971-05-10 |
NL143436B (nl) | 1974-10-15 |
JPS5411280B1 (da) | 1979-05-14 |
DE1667657A1 (de) | 1972-03-16 |
FR1556128A (da) | 1969-01-31 |
BE707877A (da) | 1968-06-12 |
DE1667657C3 (de) | 1973-10-18 |
AT294772B (de) | 1971-12-10 |
FR1547963A (fr) | 1968-11-29 |
US4013503A (en) | 1977-03-22 |
DE1667657B2 (de) | 1973-03-22 |
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