DK0878091T3 - Farvebilleddetektor til korttidsbelysning - Google Patents
Farvebilleddetektor til korttidsbelysningInfo
- Publication number
- DK0878091T3 DK0878091T3 DK97948835T DK97948835T DK0878091T3 DK 0878091 T3 DK0878091 T3 DK 0878091T3 DK 97948835 T DK97948835 T DK 97948835T DK 97948835 T DK97948835 T DK 97948835T DK 0878091 T3 DK0878091 T3 DK 0878091T3
- Authority
- DK
- Denmark
- Prior art keywords
- measured values
- pixel
- integrator
- median
- storage device
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/447—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by preserving the colour pattern with or without loss of information
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2209/00—Details of colour television systems
- H04N2209/04—Picture signal generators
- H04N2209/041—Picture signal generators using solid-state devices
- H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
- H04N2209/043—Picture signal generators using solid-state devices having a single pick-up sensor using an alternating colour separation filter, e.g. colour wheel or colour LCD
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19643972 | 1996-10-31 | ||
PCT/EP1997/005978 WO1998019455A1 (fr) | 1996-10-31 | 1997-10-30 | Capteur d'image couleur pour exposition de courte duree |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0878091T3 true DK0878091T3 (da) | 2003-01-20 |
Family
ID=7809709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK97948835T DK0878091T3 (da) | 1996-10-31 | 1997-10-30 | Farvebilleddetektor til korttidsbelysning |
Country Status (10)
Country | Link |
---|---|
US (1) | US6518558B1 (fr) |
EP (1) | EP0878091B1 (fr) |
JP (1) | JP2000501919A (fr) |
CN (1) | CN1209930A (fr) |
AT (1) | ATE224122T1 (fr) |
DE (1) | DE59708194D1 (fr) |
DK (1) | DK0878091T3 (fr) |
ES (1) | ES2184140T3 (fr) |
PT (1) | PT878091E (fr) |
WO (1) | WO1998019455A1 (fr) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6078037A (en) * | 1998-04-16 | 2000-06-20 | Intel Corporation | Active pixel CMOS sensor with multiple storage capacitors |
US7098952B2 (en) * | 1998-04-16 | 2006-08-29 | Intel Corporation | Imager having multiple storage locations for each pixel sensor |
US6606120B1 (en) * | 1998-04-24 | 2003-08-12 | Foveon, Inc. | Multiple storage node full color active pixel sensors |
US6410899B1 (en) | 1998-06-17 | 2002-06-25 | Foveon, Inc. | Active pixel sensor with bootstrap amplification and reduced leakage during readout |
WO2000005874A1 (fr) * | 1998-07-22 | 2000-02-03 | Foveon, Inc. | Detecteurs de pixels actifs possedant des noeuds de stockage multiples |
US6563540B2 (en) * | 1999-02-26 | 2003-05-13 | Intel Corporation | Light sensor with increased dynamic range |
JP2002538707A (ja) * | 1999-03-04 | 2002-11-12 | ボーム,マルクス | 映像センサ |
US6727521B2 (en) | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US6697114B1 (en) | 1999-08-13 | 2004-02-24 | Foveon, Inc. | Triple slope pixel sensor and arry |
US6809768B1 (en) | 2000-02-14 | 2004-10-26 | Foveon, Inc. | Double slope pixel sensor and array |
US6882367B1 (en) | 2000-02-29 | 2005-04-19 | Foveon, Inc. | High-sensitivity storage pixel sensor having auto-exposure detection |
FR2815806B1 (fr) * | 2000-10-23 | 2002-11-29 | Commissariat Energie Atomique | Lecteur pour element de detection de rayonnements electromagnetiques, capteur, et procede de lecture correspondant |
DE10052863A1 (de) * | 2000-10-24 | 2002-04-25 | Christian Pilgrim | Endoskopisches Instrument zur Anwendung in Hohlräumen |
JP3939092B2 (ja) * | 2000-12-28 | 2007-06-27 | セイコーインスツル株式会社 | 光電変換装置 |
US6864557B2 (en) | 2001-06-18 | 2005-03-08 | Foveon, Inc. | Vertical color filter detector group and array |
US6960757B2 (en) | 2001-06-18 | 2005-11-01 | Foveon, Inc. | Simplified wiring schemes for vertical color filter pixel sensors |
US6930336B1 (en) | 2001-06-18 | 2005-08-16 | Foveon, Inc. | Vertical-color-filter detector group with trench isolation |
US6998660B2 (en) | 2002-03-20 | 2006-02-14 | Foveon, Inc. | Vertical color filter sensor group array that emulates a pattern of single-layer sensors with efficient use of each sensor group's sensors |
US6704046B2 (en) * | 2002-04-17 | 2004-03-09 | Motorola, Inc. | Digital pixel image sensor with independent color channel reference signals |
US7164444B1 (en) | 2002-05-17 | 2007-01-16 | Foveon, Inc. | Vertical color filter detector group with highlight detector |
WO2004008540A1 (fr) * | 2002-07-16 | 2004-01-22 | Stmicroelectronics Nv | Capteur d'image obtenu selon la technologie de couche mince sur circuit integre a application specifique, presentant une photodiode a stabilite optimisee |
US7170041B2 (en) * | 2002-07-17 | 2007-01-30 | Xerox Corporation | Pixel circuitry for imaging system |
US6903394B2 (en) | 2002-11-27 | 2005-06-07 | Micron Technology, Inc. | CMOS imager with improved color response |
US7339216B1 (en) | 2003-01-31 | 2008-03-04 | Foveon, Inc. | Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer |
US7586074B2 (en) * | 2003-02-17 | 2009-09-08 | Raytheon Company | Multi-mode high capacity dual integration direct injection detector input circuit |
US7821555B2 (en) * | 2003-04-21 | 2010-10-26 | Micron Technology, Inc. | Multi path power for CMOS imagers |
US20050212936A1 (en) * | 2004-03-25 | 2005-09-29 | Eastman Kodak Company | Extended dynamic range image sensor with fixed pattern noise reduction |
US7491927B2 (en) * | 2004-06-24 | 2009-02-17 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Color sensing circuit employing charge storage device |
DE102005040901B8 (de) * | 2004-08-31 | 2014-08-14 | Omron Corporation | Sensorsystem |
US7911518B2 (en) * | 2005-02-01 | 2011-03-22 | Samsung Electronics Co., Ltd. | Variable exposure for color image sensor |
US7652699B2 (en) * | 2005-08-30 | 2010-01-26 | Motorola, Inc. | Color image sensor with tunable color filter |
JP2007135106A (ja) * | 2005-11-11 | 2007-05-31 | Matsushita Electric Ind Co Ltd | 光電流増幅回路、及び光ピックアップ装置 |
US7602430B1 (en) | 2007-04-18 | 2009-10-13 | Foveon, Inc. | High-gain multicolor pixel sensor with reset noise cancellation |
TWI380260B (en) * | 2007-12-06 | 2012-12-21 | Au Optronics Corp | Ambient light detection system and related method |
US7745773B1 (en) | 2008-04-11 | 2010-06-29 | Foveon, Inc. | Multi-color CMOS pixel sensor with shared row wiring and dual output lines |
FR2937150B1 (fr) * | 2008-10-15 | 2010-12-24 | Soc Fr Detecteurs Infrarouges Sofradir | Dispositif et procede pour realiser la lecture de courants electriques resultant d'un detecteur de signaux electromagnetiques |
US8405750B2 (en) * | 2009-06-08 | 2013-03-26 | Aptina Imaging Corporation | Image sensors and image reconstruction methods for capturing high dynamic range images |
JP5400507B2 (ja) * | 2009-07-13 | 2014-01-29 | キヤノン株式会社 | 撮像装置及び放射線撮像システム |
US8913153B2 (en) | 2011-10-06 | 2014-12-16 | Aptina Imaging Corporation | Imaging systems and methods for generating motion-compensated high-dynamic-range images |
US9172889B2 (en) | 2012-02-09 | 2015-10-27 | Semiconductor Components Industries, Llc | Imaging systems and methods for generating auto-exposed high-dynamic-range images |
US9007488B2 (en) | 2012-03-08 | 2015-04-14 | Semiconductor Components Industries, Llc | Systems and methods for generating interpolated high-dynamic-range images |
US9766126B2 (en) * | 2013-07-12 | 2017-09-19 | Zyomed Corp. | Dynamic radially controlled light input to a noninvasive analyzer apparatus and method of use thereof |
US9338372B2 (en) | 2012-09-19 | 2016-05-10 | Semiconductor Components Industries, Llc | Column-based high dynamic range imaging systems |
DE102016212765A1 (de) * | 2016-07-13 | 2018-01-18 | Robert Bosch Gmbh | Pixeleinheit für einen Bildsensor, Bildsensor, Verfahren zum Sensieren eines Lichtsignals, Verfahren zum Ansteuern einer Pixeleinheit und Verfahren zum Generieren eines Bildes unter Verwendung einer Pixeleinheit |
WO2018146146A1 (fr) * | 2017-02-08 | 2018-08-16 | Trinamix Gmbh | Détecteur pour détection optique d'au moins un objet |
IT202000018760A1 (it) * | 2020-07-31 | 2022-01-31 | Milano Politecnico | Dispositivo sensore di radiazione elettromagnetica a doppio fotodiodo |
IT202000018709A1 (it) * | 2020-07-31 | 2022-01-31 | Milano Politecnico | Sistema di rivelazione dello spettro di una radiazione elettromagnetica |
CN116507890A (zh) * | 2021-11-26 | 2023-07-28 | 京东方科技集团股份有限公司 | 光检测模组、光检测方法和显示装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6454978A (en) * | 1987-08-26 | 1989-03-02 | Toshiba Corp | Solid-state image pickup element |
JPH0759099A (ja) * | 1992-12-23 | 1995-03-03 | Loral Fairchild Corp | 高解像度モノクローム全フレームccd撮像装置を用いた電子カラー写真撮影方法及び装置 |
JPH07250287A (ja) | 1994-03-10 | 1995-09-26 | Nec Corp | 固体撮像素子とその駆動方法 |
JP3236624B2 (ja) * | 1994-10-30 | 2001-12-10 | ボーム,マルクス | 光感応性電子素子、その素子を使用したカラーセンサー、及びその素子の製造方法 |
US5754229A (en) * | 1995-11-14 | 1998-05-19 | Lockheed Martin Corporation | Electronic image sensor with multiple, sequential or staggered exposure capability for color snap shot cameras and other high speed applications |
KR100263500B1 (ko) | 1996-12-24 | 2000-08-01 | 다니구찌 이찌로오 | 고체 촬상 소자 및 그 구동 방법 |
-
1997
- 1997-10-30 DE DE59708194T patent/DE59708194D1/de not_active Expired - Fee Related
- 1997-10-30 CN CN97191827A patent/CN1209930A/zh active Pending
- 1997-10-30 AT AT97948835T patent/ATE224122T1/de not_active IP Right Cessation
- 1997-10-30 WO PCT/EP1997/005978 patent/WO1998019455A1/fr active IP Right Grant
- 1997-10-30 EP EP97948835A patent/EP0878091B1/fr not_active Expired - Lifetime
- 1997-10-30 ES ES97948835T patent/ES2184140T3/es not_active Expired - Lifetime
- 1997-10-30 PT PT97948835T patent/PT878091E/pt unknown
- 1997-10-30 DK DK97948835T patent/DK0878091T3/da active
- 1997-10-30 JP JP10520053A patent/JP2000501919A/ja not_active Ceased
-
2000
- 2000-09-28 US US09/672,667 patent/US6518558B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1209930A (zh) | 1999-03-03 |
JP2000501919A (ja) | 2000-02-15 |
US6518558B1 (en) | 2003-02-11 |
EP0878091B1 (fr) | 2002-09-11 |
PT878091E (pt) | 2003-01-31 |
ATE224122T1 (de) | 2002-09-15 |
WO1998019455A1 (fr) | 1998-05-07 |
ES2184140T3 (es) | 2003-04-01 |
EP0878091A1 (fr) | 1998-11-18 |
DE59708194D1 (de) | 2002-10-17 |
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