DK0809717T3 - Gasmanifold til et apparat til katodeforstøvning borte fra aksen - Google Patents

Gasmanifold til et apparat til katodeforstøvning borte fra aksen

Info

Publication number
DK0809717T3
DK0809717T3 DK96910302T DK96910302T DK0809717T3 DK 0809717 T3 DK0809717 T3 DK 0809717T3 DK 96910302 T DK96910302 T DK 96910302T DK 96910302 T DK96910302 T DK 96910302T DK 0809717 T3 DK0809717 T3 DK 0809717T3
Authority
DK
Denmark
Prior art keywords
axis
target
substrate
gas manifold
atomization device
Prior art date
Application number
DK96910302T
Other languages
Danish (da)
English (en)
Inventor
Willett Face Dean
Elizabeth Myers Kirsten
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Application granted granted Critical
Publication of DK0809717T3 publication Critical patent/DK0809717T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Electron Sources, Ion Sources (AREA)
DK96910302T 1995-02-14 1996-02-05 Gasmanifold til et apparat til katodeforstøvning borte fra aksen DK0809717T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/389,704 US5667650A (en) 1995-02-14 1995-02-14 High flow gas manifold for high rate, off-axis sputter deposition
PCT/US1996/001482 WO1996025531A1 (en) 1995-02-14 1996-02-05 Gas manifold for an off-axis sputter apparatus

Publications (1)

Publication Number Publication Date
DK0809717T3 true DK0809717T3 (da) 2000-03-20

Family

ID=23539371

Family Applications (1)

Application Number Title Priority Date Filing Date
DK96910302T DK0809717T3 (da) 1995-02-14 1996-02-05 Gasmanifold til et apparat til katodeforstøvning borte fra aksen

Country Status (14)

Country Link
US (1) US5667650A (de)
EP (1) EP0809717B1 (de)
JP (1) JPH11500184A (de)
KR (1) KR100387557B1 (de)
AT (1) ATE187209T1 (de)
CA (1) CA2208342A1 (de)
DE (1) DE69605403T2 (de)
DK (1) DK0809717T3 (de)
ES (1) ES2141490T3 (de)
GR (1) GR3032184T3 (de)
PT (1) PT809717E (de)
SG (1) SG38929A1 (de)
TW (1) TW413839B (de)
WO (1) WO1996025531A1 (de)

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KR100273326B1 (ko) * 1998-12-04 2000-12-15 김영환 고주파 스퍼터링 장치 및 이를 이용한 박막형성방법
US7305565B1 (en) 2000-05-31 2007-12-04 Symbol Technologies, Inc. Secure, encrypting pin pad
US20030159925A1 (en) * 2001-01-29 2003-08-28 Hiroaki Sako Spattering device
TW562869B (en) * 2001-01-29 2003-11-21 Nippon Sheet Glass Co Ltd Sputtering apparatus
DE10104611A1 (de) * 2001-02-02 2002-08-14 Bosch Gmbh Robert Vorrichtung zur keramikartigen Beschichtung eines Substrates
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
JP2002266072A (ja) * 2001-03-09 2002-09-18 Sumitomo Electric Ind Ltd 積層膜および成膜方法
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
WO2003005456A1 (en) * 2001-07-06 2003-01-16 Honda Giken Kogyo Kabushiki Kaisha Method for forming light-absorbing layer
JP3776889B2 (ja) * 2003-02-07 2006-05-17 株式会社東芝 半導体装置およびその製造方法
US7309616B2 (en) * 2003-03-13 2007-12-18 Unity Semiconductor Corporation Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US7063984B2 (en) * 2003-03-13 2006-06-20 Unity Semiconductor Corporation Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
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KR20050034887A (ko) * 2003-10-10 2005-04-15 삼성전자주식회사 전원전압 동기신호 생성 장치 및 방법
JP4625922B2 (ja) * 2004-04-05 2011-02-02 独立行政法人産業技術総合研究所 サファイア基板上高臨界面電流超電導酸化物薄膜及びその作製方法
JP2007227086A (ja) * 2006-02-22 2007-09-06 Tokyo Electron Ltd 成膜装置および発光素子の製造方法
US20100155749A1 (en) * 2007-03-19 2010-06-24 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
US20100110728A1 (en) 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
KR101686669B1 (ko) * 2007-03-19 2016-12-14 나노시스, 인크. 나노크리스털을 캡슐화하는 방법
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
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EP2298953B1 (de) * 2009-09-18 2014-03-05 Rohm and Haas Electronic Materials, L.L.C. Verfahren zur Herstellung haltbarer Artikel
US8591709B1 (en) * 2010-05-18 2013-11-26 WD Media, LLC Sputter deposition shield assembly to reduce cathode shorting
EP2638321B1 (de) 2010-11-10 2019-05-08 Nanosys, Inc. Quantenpunktfilme, beleuchtungsvorrichtungen und beleuchtungsverfahren
EP2834860B1 (de) * 2012-04-04 2015-12-30 Forschungszentrum Jülich GmbH Reproduzierbarerer stufen-josephson-kontakt
CA2955381C (en) 2014-09-12 2022-03-22 Exxonmobil Upstream Research Company Discrete wellbore devices, hydrocarbon wells including a downhole communication network and the discrete wellbore devices and systems and methods including the same
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US10590759B2 (en) 2016-08-30 2020-03-17 Exxonmobil Upstream Research Company Zonal isolation devices including sensing and wireless telemetry and methods of utilizing the same
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US11828172B2 (en) 2016-08-30 2023-11-28 ExxonMobil Technology and Engineering Company Communication networks, relay nodes for communication networks, and methods of transmitting data among a plurality of relay nodes
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Also Published As

Publication number Publication date
KR100387557B1 (ko) 2003-10-22
EP0809717B1 (de) 1999-12-01
PT809717E (pt) 2000-04-28
TW413839B (en) 2000-12-01
SG38929A1 (en) 1997-04-17
GR3032184T3 (en) 2000-04-27
JPH11500184A (ja) 1999-01-06
KR19980702230A (ko) 1998-07-15
ATE187209T1 (de) 1999-12-15
WO1996025531A1 (en) 1996-08-22
EP0809717A1 (de) 1997-12-03
CA2208342A1 (en) 1996-08-22
ES2141490T3 (es) 2000-03-16
DE69605403D1 (de) 2000-01-05
DE69605403T2 (de) 2000-07-06
US5667650A (en) 1997-09-16

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