ES2141490T3 - Distribuidor de gas para un aparato de deposicion catodica extraaxial. - Google Patents
Distribuidor de gas para un aparato de deposicion catodica extraaxial.Info
- Publication number
- ES2141490T3 ES2141490T3 ES96910302T ES96910302T ES2141490T3 ES 2141490 T3 ES2141490 T3 ES 2141490T3 ES 96910302 T ES96910302 T ES 96910302T ES 96910302 T ES96910302 T ES 96910302T ES 2141490 T3 ES2141490 T3 ES 2141490T3
- Authority
- ES
- Spain
- Prior art keywords
- extraaxial
- target
- substrate
- gas distributor
- gas flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008021 deposition Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052809 inorganic oxide Inorganic materials 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
- H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Electron Sources, Ion Sources (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
SE EXPONE UN DISPOSITIVO MEJORADO PARA LA DEPOSICION DE COMPUESTOS DE OXIDOS INORGANICOS MEDIANTE UN PULVERIZADOR MAGNETRONICO DESCENTRADO, QUE CONSTA DE UNA PISTOLA DE BOMBARDEO IONICO, UN ANTICATODO (25), SUSTRATO (1), MEDIOS PARA EL FLUJO DE GAS (21) Y UNA CAMARA DE CONFINAMIENTO. LA MEJORA CONSISTE EN UN DISTRIBUIDOR HUECO DE FLUJO DE GAS (27) SITUADO ENTRE EL SUSTRATO (1) Y EL ANTICATODO (25) Y QUE TIENE AL MENOS UNA ENTRADA DE GAS Y AL MENOS UNA ABERTURA DE SALIDA (28) EN EL DISTRIBUIDOR, ESTANDO DICHA ABERTURA DE SALIDA (28) SITUADA DE MANERA QUE DIRIJA EL FLUJO DE GAS LEJOS DEL ANTICATODO Y EN LA DIRECCION DEL SUSTRATO. TAMBIEN SE EXPONE EL PROCESO PARA LA REFERIDA DEPOSICION.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/389,704 US5667650A (en) | 1995-02-14 | 1995-02-14 | High flow gas manifold for high rate, off-axis sputter deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2141490T3 true ES2141490T3 (es) | 2000-03-16 |
Family
ID=23539371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES96910302T Expired - Lifetime ES2141490T3 (es) | 1995-02-14 | 1996-02-05 | Distribuidor de gas para un aparato de deposicion catodica extraaxial. |
Country Status (14)
Country | Link |
---|---|
US (1) | US5667650A (es) |
EP (1) | EP0809717B1 (es) |
JP (1) | JPH11500184A (es) |
KR (1) | KR100387557B1 (es) |
AT (1) | ATE187209T1 (es) |
CA (1) | CA2208342A1 (es) |
DE (1) | DE69605403T2 (es) |
DK (1) | DK0809717T3 (es) |
ES (1) | ES2141490T3 (es) |
GR (1) | GR3032184T3 (es) |
PT (1) | PT809717E (es) |
SG (1) | SG38929A1 (es) |
TW (1) | TW413839B (es) |
WO (1) | WO1996025531A1 (es) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19734633C2 (de) * | 1997-08-11 | 1999-08-26 | Forschungszentrum Juelich Gmbh | Hochdruck-Magnetron-Kathode |
US5889289A (en) * | 1997-08-28 | 1999-03-30 | The United States Of America As Represented By The Secretary Of The Navy | High temperature superconductor/insulator composite thin films with Josephson coupled grains |
US6592728B1 (en) * | 1998-08-04 | 2003-07-15 | Veeco-Cvc, Inc. | Dual collimated deposition apparatus and method of use |
KR100309675B1 (ko) * | 1998-11-23 | 2001-12-17 | 오길록 | 고온초전도계단형모서리조셉슨접합제작방법 |
KR100273326B1 (ko) * | 1998-12-04 | 2000-12-15 | 김영환 | 고주파 스퍼터링 장치 및 이를 이용한 박막형성방법 |
US7305565B1 (en) | 2000-05-31 | 2007-12-04 | Symbol Technologies, Inc. | Secure, encrypting pin pad |
TW562869B (en) * | 2001-01-29 | 2003-11-21 | Nippon Sheet Glass Co Ltd | Sputtering apparatus |
US20030159925A1 (en) * | 2001-01-29 | 2003-08-28 | Hiroaki Sako | Spattering device |
DE10104611A1 (de) * | 2001-02-02 | 2002-08-14 | Bosch Gmbh Robert | Vorrichtung zur keramikartigen Beschichtung eines Substrates |
US6656643B2 (en) | 2001-02-20 | 2003-12-02 | Chartered Semiconductor Manufacturing Ltd. | Method of extreme ultraviolet mask engineering |
JP2002266072A (ja) * | 2001-03-09 | 2002-09-18 | Sumitomo Electric Ind Ltd | 積層膜および成膜方法 |
US6582861B2 (en) | 2001-03-16 | 2003-06-24 | Applied Materials, Inc. | Method of reshaping a patterned organic photoresist surface |
WO2003005456A1 (en) * | 2001-07-06 | 2003-01-16 | Honda Giken Kogyo Kabushiki Kaisha | Method for forming light-absorbing layer |
JP3776889B2 (ja) * | 2003-02-07 | 2006-05-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
US7063984B2 (en) * | 2003-03-13 | 2006-06-20 | Unity Semiconductor Corporation | Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits |
US7309616B2 (en) * | 2003-03-13 | 2007-12-18 | Unity Semiconductor Corporation | Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits |
USH2212H1 (en) * | 2003-09-26 | 2008-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for producing an ion-ion plasma continuous in time |
KR20050034887A (ko) * | 2003-10-10 | 2005-04-15 | 삼성전자주식회사 | 전원전압 동기신호 생성 장치 및 방법 |
JP4625922B2 (ja) * | 2004-04-05 | 2011-02-02 | 独立行政法人産業技術総合研究所 | サファイア基板上高臨界面電流超電導酸化物薄膜及びその作製方法 |
JP2007227086A (ja) * | 2006-02-22 | 2007-09-06 | Tokyo Electron Ltd | 成膜装置および発光素子の製造方法 |
JP2010528118A (ja) * | 2007-03-19 | 2010-08-19 | ナノシス・インコーポレイテッド | ナノ結晶を被包するための方法 |
US20100110728A1 (en) * | 2007-03-19 | 2010-05-06 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
US20100155749A1 (en) * | 2007-03-19 | 2010-06-24 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
US10214686B2 (en) | 2008-12-30 | 2019-02-26 | Nanosys, Inc. | Methods for encapsulating nanocrystals and resulting compositions |
US11198270B2 (en) | 2008-12-30 | 2021-12-14 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
US8343575B2 (en) | 2008-12-30 | 2013-01-01 | Nanosys, Inc. | Methods for encapsulating nanocrystals and resulting compositions |
EP2298953B1 (en) * | 2009-09-18 | 2014-03-05 | Rohm and Haas Electronic Materials, L.L.C. | Method of making durable articles |
US8591709B1 (en) * | 2010-05-18 | 2013-11-26 | WD Media, LLC | Sputter deposition shield assembly to reduce cathode shorting |
EP3839335A1 (en) | 2010-11-10 | 2021-06-23 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
CN104350623B (zh) * | 2012-04-04 | 2017-02-22 | 于利奇研究中心有限公司 | 具有约瑟夫森触点的组件及其制造方法 |
EP3191683A1 (en) | 2014-09-12 | 2017-07-19 | Exxonmobil Upstream Research Company | Discrete wellbore devices, hydrocarbon wells including a downhole communication network and the discrete wellbore devices and systems and methods including the same |
US10408047B2 (en) | 2015-01-26 | 2019-09-10 | Exxonmobil Upstream Research Company | Real-time well surveillance using a wireless network and an in-wellbore tool |
US10465505B2 (en) | 2016-08-30 | 2019-11-05 | Exxonmobil Upstream Research Company | Reservoir formation characterization using a downhole wireless network |
US10364669B2 (en) | 2016-08-30 | 2019-07-30 | Exxonmobil Upstream Research Company | Methods of acoustically communicating and wells that utilize the methods |
US10697287B2 (en) | 2016-08-30 | 2020-06-30 | Exxonmobil Upstream Research Company | Plunger lift monitoring via a downhole wireless network field |
US10487647B2 (en) | 2016-08-30 | 2019-11-26 | Exxonmobil Upstream Research Company | Hybrid downhole acoustic wireless network |
US10415376B2 (en) | 2016-08-30 | 2019-09-17 | Exxonmobil Upstream Research Company | Dual transducer communications node for downhole acoustic wireless networks and method employing same |
US10526888B2 (en) | 2016-08-30 | 2020-01-07 | Exxonmobil Upstream Research Company | Downhole multiphase flow sensing methods |
US10590759B2 (en) | 2016-08-30 | 2020-03-17 | Exxonmobil Upstream Research Company | Zonal isolation devices including sensing and wireless telemetry and methods of utilizing the same |
US10344583B2 (en) | 2016-08-30 | 2019-07-09 | Exxonmobil Upstream Research Company | Acoustic housing for tubulars |
US10837276B2 (en) | 2017-10-13 | 2020-11-17 | Exxonmobil Upstream Research Company | Method and system for performing wireless ultrasonic communications along a drilling string |
AU2018347876B2 (en) | 2017-10-13 | 2021-10-07 | Exxonmobil Upstream Research Company | Method and system for performing hydrocarbon operations with mixed communication networks |
CA3078835C (en) | 2017-10-13 | 2022-11-01 | Exxonmobil Upstream Research Company | Method and system for performing operations with communications |
US10697288B2 (en) | 2017-10-13 | 2020-06-30 | Exxonmobil Upstream Research Company | Dual transducer communications node including piezo pre-tensioning for acoustic wireless networks and method employing same |
WO2019074657A1 (en) | 2017-10-13 | 2019-04-18 | Exxonmobil Upstream Research Company | METHOD AND SYSTEM FOR REALIZING OPERATIONS USING COMMUNICATIONS |
MX2020004982A (es) | 2017-10-13 | 2020-11-12 | Exxonmobil Upstream Res Co | Metodo y sistema para realizar comunicaciones usando solapamiento. |
US11203927B2 (en) | 2017-11-17 | 2021-12-21 | Exxonmobil Upstream Research Company | Method and system for performing wireless ultrasonic communications along tubular members |
US10690794B2 (en) | 2017-11-17 | 2020-06-23 | Exxonmobil Upstream Research Company | Method and system for performing operations using communications for a hydrocarbon system |
US10844708B2 (en) | 2017-12-20 | 2020-11-24 | Exxonmobil Upstream Research Company | Energy efficient method of retrieving wireless networked sensor data |
US11156081B2 (en) | 2017-12-29 | 2021-10-26 | Exxonmobil Upstream Research Company | Methods and systems for operating and maintaining a downhole wireless network |
WO2019133290A1 (en) | 2017-12-29 | 2019-07-04 | Exxonmobil Upstream Research Company | Methods and systems for monitoring and optimizing reservoir stimulation operations |
WO2019156966A1 (en) | 2018-02-08 | 2019-08-15 | Exxonmobil Upstream Research Company | Methods of network peer identification and self-organization using unique tonal signatures and wells that use the methods |
US11268378B2 (en) | 2018-02-09 | 2022-03-08 | Exxonmobil Upstream Research Company | Downhole wireless communication node and sensor/tools interface |
US11293280B2 (en) | 2018-12-19 | 2022-04-05 | Exxonmobil Upstream Research Company | Method and system for monitoring post-stimulation operations through acoustic wireless sensor network |
US11952886B2 (en) | 2018-12-19 | 2024-04-09 | ExxonMobil Technology and Engineering Company | Method and system for monitoring sand production through acoustic wireless sensor network |
WO2021148195A1 (en) * | 2020-01-24 | 2021-07-29 | Evatec Ag | Phase shift controlled sputter system and process |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1155798A (en) * | 1981-03-30 | 1983-10-25 | Shmuel Maniv | Reactive deposition method and apparatus |
US4425218A (en) * | 1982-03-30 | 1984-01-10 | Shatterproof Glass Corporation | Gas distribution system for sputtering cathodes |
JPS63307254A (ja) * | 1987-06-08 | 1988-12-14 | Matsushita Electric Ind Co Ltd | 酸化物薄膜作製装置 |
US4990229A (en) * | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US5134117A (en) * | 1991-01-22 | 1992-07-28 | Biomagnetic Technologies, Inc. | High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction |
DE4108001C1 (es) * | 1991-03-13 | 1992-07-09 | Forschungszentrum Juelich Gmbh, 5170 Juelich, De | |
JPH05148634A (ja) * | 1991-11-22 | 1993-06-15 | Nec Corp | スパツタリング装置 |
US5252551A (en) * | 1991-12-27 | 1993-10-12 | The United States Of America As Represented By The Department Of Energy | Superconducting composite with multilayer patterns and multiple buffer layers |
-
1995
- 1995-02-14 US US08/389,704 patent/US5667650A/en not_active Expired - Fee Related
-
1996
- 1996-02-05 AT AT96910302T patent/ATE187209T1/de not_active IP Right Cessation
- 1996-02-05 DE DE69605403T patent/DE69605403T2/de not_active Expired - Fee Related
- 1996-02-05 ES ES96910302T patent/ES2141490T3/es not_active Expired - Lifetime
- 1996-02-05 CA CA002208342A patent/CA2208342A1/en not_active Abandoned
- 1996-02-05 JP JP8524985A patent/JPH11500184A/ja not_active Ceased
- 1996-02-05 DK DK96910302T patent/DK0809717T3/da active
- 1996-02-05 WO PCT/US1996/001482 patent/WO1996025531A1/en active IP Right Grant
- 1996-02-05 KR KR1019970705627A patent/KR100387557B1/ko not_active IP Right Cessation
- 1996-02-05 EP EP96910302A patent/EP0809717B1/en not_active Expired - Lifetime
- 1996-02-05 PT PT96910302T patent/PT809717E/pt unknown
- 1996-02-14 TW TW085101839A patent/TW413839B/zh not_active IP Right Cessation
- 1996-02-14 SG SG1996001535A patent/SG38929A1/en unknown
-
1999
- 1999-12-17 GR GR990403270T patent/GR3032184T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
DE69605403D1 (de) | 2000-01-05 |
ATE187209T1 (de) | 1999-12-15 |
WO1996025531A1 (en) | 1996-08-22 |
DK0809717T3 (da) | 2000-03-20 |
GR3032184T3 (en) | 2000-04-27 |
TW413839B (en) | 2000-12-01 |
KR100387557B1 (ko) | 2003-10-22 |
PT809717E (pt) | 2000-04-28 |
KR19980702230A (ko) | 1998-07-15 |
SG38929A1 (en) | 1997-04-17 |
US5667650A (en) | 1997-09-16 |
EP0809717B1 (en) | 1999-12-01 |
CA2208342A1 (en) | 1996-08-22 |
DE69605403T2 (de) | 2000-07-06 |
EP0809717A1 (en) | 1997-12-03 |
JPH11500184A (ja) | 1999-01-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES2141490T3 (es) | Distribuidor de gas para un aparato de deposicion catodica extraaxial. | |
EP0860514A3 (en) | Reactive sputtering apparatus and process for forming thin film using same | |
EP0738788A3 (en) | Thin-Film vapor deposition apparatus | |
EP0908531A3 (en) | Apparatus and method for forming a thin film of a compound | |
GB2347148A (en) | Enhanced macroparticle filter and cathode arc source | |
ATE3228T1 (de) | Zerstaeubungskathode und vorrichtung zum beschichten grossflaechiger substrate durch kathodenzerstaeubung. | |
ES2111418A1 (es) | Dispositivo y procedimiento para formar un recubrimiento porpirolisis. | |
DE68927920T2 (de) | Magnetronzerstäubungsanlage und -verfahren | |
TW331652B (en) | Thin film vapor deposition apparatus | |
JPS5785968A (en) | Chemically activated plasma vapor deposition apparatus | |
DE59603946D1 (de) | Vorrichtung zur Wärmebehandlung metallischer Werkstücke unter Vakuum | |
US6468386B1 (en) | Gas delivery system | |
TW354407B (en) | Sputtering device (2) | |
ES8407249A1 (es) | Perfeccionamientos introducidos en una camara aislada de deposicion por descarga incandescente | |
CA2204466A1 (en) | Apparatus and method for exposing product to a controlled environment | |
ATE345404T1 (de) | Verfahren zum abscheiden von schichtsystemen | |
EP1046728A3 (en) | Process chamber with inner support | |
TW335504B (en) | A method for providing full-face high density plasma deposition | |
FR2779914B1 (fr) | Procede et installation d'etuvage du riz et lot de grains de riz etuve | |
TW276348B (en) | Apparatus for coating a substrate | |
TW343356B (en) | Deposition chamber and method for depositing low dielectric films | |
JPS6335776A (ja) | 気相化学蒸着装置 | |
AU4936196A (en) | Plasma chamber | |
DE69513627T2 (de) | Vorrichtung zum Einsetzen einer Abdeckplatte in einer Zufuhr- und Austauschvorrichtung eines Tauchrohres | |
RU95102108A (ru) | Установка для газоимпульсной очистки поверхностей нагрева |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
Ref document number: 809717 Country of ref document: ES |