SG38929A1 - High flow gas manifold for high rate off-axis sputter deposition - Google Patents

High flow gas manifold for high rate off-axis sputter deposition

Info

Publication number
SG38929A1
SG38929A1 SG1996001535A SG1996001535A SG38929A1 SG 38929 A1 SG38929 A1 SG 38929A1 SG 1996001535 A SG1996001535 A SG 1996001535A SG 1996001535 A SG1996001535 A SG 1996001535A SG 38929 A1 SG38929 A1 SG 38929A1
Authority
SG
Singapore
Prior art keywords
sputter deposition
gas manifold
flow gas
target
substrate
Prior art date
Application number
SG1996001535A
Other languages
English (en)
Inventor
Dean Willett Face
Kirsten Elizabeth Myers
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of SG38929A1 publication Critical patent/SG38929A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
SG1996001535A 1995-02-14 1996-02-14 High flow gas manifold for high rate off-axis sputter deposition SG38929A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/389,704 US5667650A (en) 1995-02-14 1995-02-14 High flow gas manifold for high rate, off-axis sputter deposition

Publications (1)

Publication Number Publication Date
SG38929A1 true SG38929A1 (en) 1997-04-17

Family

ID=23539371

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996001535A SG38929A1 (en) 1995-02-14 1996-02-14 High flow gas manifold for high rate off-axis sputter deposition

Country Status (14)

Country Link
US (1) US5667650A (es)
EP (1) EP0809717B1 (es)
JP (1) JPH11500184A (es)
KR (1) KR100387557B1 (es)
AT (1) ATE187209T1 (es)
CA (1) CA2208342A1 (es)
DE (1) DE69605403T2 (es)
DK (1) DK0809717T3 (es)
ES (1) ES2141490T3 (es)
GR (1) GR3032184T3 (es)
PT (1) PT809717E (es)
SG (1) SG38929A1 (es)
TW (1) TW413839B (es)
WO (1) WO1996025531A1 (es)

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KR100273326B1 (ko) * 1998-12-04 2000-12-15 김영환 고주파 스퍼터링 장치 및 이를 이용한 박막형성방법
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US20030159925A1 (en) * 2001-01-29 2003-08-28 Hiroaki Sako Spattering device
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DE10104611A1 (de) * 2001-02-02 2002-08-14 Bosch Gmbh Robert Vorrichtung zur keramikartigen Beschichtung eines Substrates
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
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US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
US20050006221A1 (en) * 2001-07-06 2005-01-13 Nobuyoshi Takeuchi Method for forming light-absorbing layer
JP3776889B2 (ja) * 2003-02-07 2006-05-17 株式会社東芝 半導体装置およびその製造方法
US7063984B2 (en) * 2003-03-13 2006-06-20 Unity Semiconductor Corporation Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US7309616B2 (en) * 2003-03-13 2007-12-18 Unity Semiconductor Corporation Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
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KR20050034887A (ko) * 2003-10-10 2005-04-15 삼성전자주식회사 전원전압 동기신호 생성 장치 및 방법
JP4625922B2 (ja) * 2004-04-05 2011-02-02 独立行政法人産業技術総合研究所 サファイア基板上高臨界面電流超電導酸化物薄膜及びその作製方法
JP2007227086A (ja) * 2006-02-22 2007-09-06 Tokyo Electron Ltd 成膜装置および発光素子の製造方法
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US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
TWI419988B (zh) * 2009-09-18 2013-12-21 羅門哈斯電子材料有限公司 製造耐用物件之方法
US8591709B1 (en) * 2010-05-18 2013-11-26 WD Media, LLC Sputter deposition shield assembly to reduce cathode shorting
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ES2564493T3 (es) * 2012-04-04 2016-03-23 Forschungszentrum Jülich GmbH Contacto de Josephson en etapas reproducible
CA2955381C (en) 2014-09-12 2022-03-22 Exxonmobil Upstream Research Company Discrete wellbore devices, hydrocarbon wells including a downhole communication network and the discrete wellbore devices and systems and methods including the same
US10408047B2 (en) 2015-01-26 2019-09-10 Exxonmobil Upstream Research Company Real-time well surveillance using a wireless network and an in-wellbore tool
US10590759B2 (en) 2016-08-30 2020-03-17 Exxonmobil Upstream Research Company Zonal isolation devices including sensing and wireless telemetry and methods of utilizing the same
US10526888B2 (en) 2016-08-30 2020-01-07 Exxonmobil Upstream Research Company Downhole multiphase flow sensing methods
US10487647B2 (en) 2016-08-30 2019-11-26 Exxonmobil Upstream Research Company Hybrid downhole acoustic wireless network
US10465505B2 (en) 2016-08-30 2019-11-05 Exxonmobil Upstream Research Company Reservoir formation characterization using a downhole wireless network
US10697287B2 (en) 2016-08-30 2020-06-30 Exxonmobil Upstream Research Company Plunger lift monitoring via a downhole wireless network field
US10344583B2 (en) 2016-08-30 2019-07-09 Exxonmobil Upstream Research Company Acoustic housing for tubulars
US10364669B2 (en) 2016-08-30 2019-07-30 Exxonmobil Upstream Research Company Methods of acoustically communicating and wells that utilize the methods
US10415376B2 (en) 2016-08-30 2019-09-17 Exxonmobil Upstream Research Company Dual transducer communications node for downhole acoustic wireless networks and method employing same
WO2019074657A1 (en) 2017-10-13 2019-04-18 Exxonmobil Upstream Research Company METHOD AND SYSTEM FOR REALIZING OPERATIONS USING COMMUNICATIONS
US10883363B2 (en) 2017-10-13 2021-01-05 Exxonmobil Upstream Research Company Method and system for performing communications using aliasing
US10837276B2 (en) 2017-10-13 2020-11-17 Exxonmobil Upstream Research Company Method and system for performing wireless ultrasonic communications along a drilling string
US11035226B2 (en) 2017-10-13 2021-06-15 Exxomobil Upstream Research Company Method and system for performing operations with communications
CN111201727B (zh) 2017-10-13 2021-09-03 埃克森美孚上游研究公司 利用混合通信网络进行烃操作的方法和系统
US10697288B2 (en) 2017-10-13 2020-06-30 Exxonmobil Upstream Research Company Dual transducer communications node including piezo pre-tensioning for acoustic wireless networks and method employing same
US12000273B2 (en) 2017-11-17 2024-06-04 ExxonMobil Technology and Engineering Company Method and system for performing hydrocarbon operations using communications associated with completions
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Also Published As

Publication number Publication date
JPH11500184A (ja) 1999-01-06
EP0809717B1 (en) 1999-12-01
EP0809717A1 (en) 1997-12-03
DE69605403T2 (de) 2000-07-06
GR3032184T3 (en) 2000-04-27
TW413839B (en) 2000-12-01
KR19980702230A (ko) 1998-07-15
KR100387557B1 (ko) 2003-10-22
DK0809717T3 (da) 2000-03-20
DE69605403D1 (de) 2000-01-05
PT809717E (pt) 2000-04-28
ES2141490T3 (es) 2000-03-16
US5667650A (en) 1997-09-16
WO1996025531A1 (en) 1996-08-22
ATE187209T1 (de) 1999-12-15
CA2208342A1 (en) 1996-08-22

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