TW562869B - Sputtering apparatus - Google Patents

Abstract

A sputtering apparatus 1 sputters a target 8 with ions in plasma using a magnetron sputtering method, to form an ITO film originated from the target 8 on a glass substrate 5 mounted on a rotating carrousel 4. Manifolds 9 and 10, which have a shape that is symmetrical about each of two mutually orthogonal central axes in the plane of the target 8, and are disposed so as so to surround the whole periphery of the target 8, and process gas discharge ports 9a and 10a for discharginga process gas onto the target 8 are provided in a manner being distributed over the whole manifolds 9 and 10.

Description

562869 A7

Technical Field The present invention relates to a splash device, and more particularly to a manufacturing device. The substrate has a transparent guide film for a liquid crystal display device. The background technology is generally a color filter made of an organic resin (organic substance), and a protective film also made of -organic resin is coated on the color filter to form a color filter substrate. Then, a conductive transparent electrode (transparent conductive film) is uniformly formed on the color filter substrate, thereby manufacturing a substrate having a transparent conductive film used in a color liquid crystal display device. According to this, the transparent conductive film formed on the color filter substrate is usually formed by wet etching to form a required wiring structure. Generally, indium tin oxide (hereinafter referred to as indium tin oxide (ITO)) doped with tin oxide is used as the transparent conductive film. s material. In the field of expanding the use of color liquid crystal display devices and greatly improving the performance of color liquid crystal display devices, when forming an ITQ film on a color filter substrate, attention must be paid to the formed ITO film on a substrate having a large area. The whole surface has uniform thickness and quality. For example, it is necessary to perform a stable discharge on a target overall surface having a large area, thereby generating a uniform plasma, and at the same time eliminating the influence of gas components discharged from the organic resin coated on the surface of the color filter substrate. The magnetic k ^ 1 sputtering system is the most widely used method for forming the I but 0 film. The magnetron sputtering system is suitable for forming a thin film on a color filter substrate having a large area and has the following advantages: The formation of a film at a lower temperature can reduce the production of gas components from an organic substance coated on a substrate. -4- This paper standard applies to the CNS Ad grid (21Gχ297 public love) 562869 A7 B7 V. Description of the invention (2 students). In the magnetron spraying, compared with the technology of controlling the state of the plasma in the sputtering, 'the technology has already been introduced for the method of introducing processing gas. This is for color filtering. The thickness and quality of the thin film formed on the substrate will have an important effect and a significant impact. For example, a spraying device is proposed in Japanese Patent Laid-Open (Kokai) No. 05-148627, in which a processing gas introduction port is arranged at the cathode Nearby 'According to this device, because the processing gas introduction port and the cathode have a fixed positional relationship, it has the effect of not considering the positional relationship between the processing gas introduction port and the cathode, and it is effective in maintenance or It is not necessary to adjust the position of the processing gas introduction port after inspection. And 'In Japanese Patent Laid-Open (Kokai) 0 5-243 155, a sputtering device for forming a metal coating on a semiconductor substrate is proposed, in which The gas system is fed simultaneously from the periphery of a circular substrate and the periphery of a circular target, and provides a means for exhausting the fed processing gas. According to this device, the processing gas is evenly distributed on the target and the substrate, Therefore, it has the effect of making the coating more uniform and reducing foreign matter. However, in the conventional spraying device described above, if the former is the case, the introduction position of the processing gas is only fixed near the cathode, so it is difficult to have a A uniform gas distribution is obtained over the entire surface of a large area of the target. In the latter case, the diameter of the substrate and the target is at most about 150 to 200 mm, so although it is assumed that it is easier to feed the processing gas uniformly here Above the area, it is still predicted that in the case of a substrate with a large area, the distribution of the processing gas is not exactly from the peripheral portion of the substrate to the central portion of the substrate -5- This paper scales applicable Chinese National Standard (CNS) A4 size (210X297 mm) 562869 A7 B7

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562869 A7 B7 V. Description of the invention (4) The discharge maintains a stable state so that the plasma maintains a stable state (see, for example, Japanese Patent Publication (Kokai) 2000-0345 No. 64). FIG. 18 is a diagram for effectively explaining a conventional DC / RF stacked type magnetron sputtering device. As shown in FIG. 18, the conventional DC / RF stacked type magnetron spraying device has a housing 202, a vacuum chamber 201 is formed in the housing 202, and a vacuum chamber 201 is attached to the housing through an insulator (not shown). One side of the ITO cathode 203, a large area of the target 205 is attached to an inner surface of the ITO cathode 203 via a support plate 204, a glass substrate (not shown) that can be sprayed on It is arranged in the vacuum chamber 201 in a facing relationship with the target 205. The ITO cathode 203 has a concave portion formed on a rear surface side, and a magnet 206 for sputtering is arranged in the concave portion. In order to ensure the strength of the ITO cathode 203, one of the side surface members used to form the concave portion of the ITO cathode 203 is generally composed of a stainless steel plate, and the rear surface side is opened outward. The ITO cathode 203 is composed of one Covered by a cathode case 209 for supporting a power supply unit 208. The power supply unit 208 supported by the cathode case 209 has a circuit structure (not shown). The circuit structure is formed by a matching box and a radio frequency (RF) power supply connected in series with each other, and a matching box and a radio frequency (RF) power supply. Consists of one direct current (DC) power supply in parallel. The matching box has a circuit mainly composed of a high-capacity capacitor. The power supply unit 208 superimposes DC power and RF power and supplies the generated power to the ITO cathode 203 as the splash power. The power comes from the power supply. This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 562869. A7 B7 5. Description of the invention (5)-The RF power output 210 of the matching box of the unit 208 is connected to a one-end surface of the side surface member located at the ITO cathode 203 via a flexible metal band 211 made of copper or the like A point at the center contacts the portion 212. The DC power output section 213 from the power supply unit 208 is connected in parallel to the RF power and is connected to a one-point contact section 2 1 5 at approximately the center of an end surface of the side surface member of the ITO cathode 203 via a coaxial cable 214. As a result, the spray power supplied from the power supply unit 208 is isotropically propagated to the periphery of the target 205. However, in the conventional DC / RF stack type magnetron sputtering device shown in FIG. 18, the flexible metal strip 211 and the coaxial cable 214 and the ITO cathode 203 are made of different types of metal via each other, respectively. The point-to-point contact portions 212 and 215 supply the sputtering power to the ITO cathode 203, so the contact resistance is easy to change. In this case, the impedance of the ITO cathode 203 will change as a whole, so the glow discharge cannot remain stable over time. status. As a result, an abnormal discharge or an uneven plasma is liable to occur. Due to this impedance change, the RF power component affects the generation of the plasma more strongly than the DC power component. In addition, the thickness of the ITO film on the substrate at a position corresponding to one of the power supply units 208 supported by the cathode case 209 becomes smaller than the thickness of the ITO film at other positions on the substrate, so the thickness of the ITO film becomes It is non-uniform, because for the sputtering power supplied to the ITO cathode 203, part of the RF component leaks into the matching box through an opening in the cathode case 209, so the power is no longer uniformly fed to the ITO cathode 203. The high-frequency noise generated above the entire surface or in the matching box and -8- supplied to the ITO cathode 203- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) binding

562869 A7 B7 5. In the description of the invention (7), at the same time, the influence of gas components emitted from organic substances coated on the surface of the substrate is eliminated, so a coating with uniform thickness and quality can be formed over the entire substrate. Floor. The aforementioned manifold is preferably divided into at least two manifold sections. According to the above configuration, the manifold is divided into at least two manifold sections. As a result, individual manifold sections can be made short, thus preventing the process gas and feed rate and pressure from decreasing due to the manifold being too long. And preferably, the above-mentioned processing gas supply member has at least two processing gas supply sources, and at least two manifold sections are each connected to one processing gas supply. According to the above-mentioned configuration manner, the manifold sections are each connected to one processing gas supply source. Each manifold section controls the feed rate and pressure of the process gas, respectively. Moreover, the process gas discharge port preferably includes a plurality of holes or slits. According to the above configuration, the process gas discharge port includes a plurality of holes or slits. As a result, the process gas discharge port can be easily distributed over the entire surface of the target. Moreover, the sputtering device preferably has a plasma shielding plate, which is configured to surround the entire periphery of the target and shield the cathode and the manifold from plasma during the sputtering, wherein each of the plasma shielding plates has a plurality of The processing gas passes through the holes. The plurality of processing gases pass through the holes and are arranged above the overall plasma shielding plate to adjust the flow of the processing gas discharged from the processing gas discharge port to the target. According to the above construction method, a plurality of processing gases are set at electricity through the hole system. -10- This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm). 5. Description of the invention (9) depends on a power supply. The thickness distribution of the location of the unit is 3¾, soil, person, 1U suspension material, Γ and film thickness distribution on the solid substrate, which depends on the location of an adjacent supply unit, are complementary. ： According to the above-mentioned determination of the positions of a plurality of power supply units constituting the 10,000-type: the formula will make it depend on one power supply unit :：： The thickness distribution of the thin film is based on the method of taking < the beautiful material on the substrate W depends on the position of an adjacent power supply unit. The film thickness distribution on the substrate exhibits complementary thickness and quality-the film can be formed over the entire substrate. -... And the "preferred" power supply unit is configured to have at least one cathode via a square south 5 πr "I perpendicular to the direction of 疋. The surface-contacting conductor supplies the base power to the configuration method, and the power supply The unit system is configured to supply the base force to the cathode via a conductor in a surface contact configuration along the direction perpendicular to the 6 'movement of the plate soil. The social power, the same power, power supply, etc. Directional propagation to the target's edge can therefore form a spatially uniform and reliable plasma density near the target: and 'preferably' at least two cathodes are arranged along the predetermined direction,

:: Medium-to-one power supply unit is connected to one cathode and the other power supply unit is connected to the other cathode. And A are arranged at least according to the above-mentioned configuration, and as a result, the film 2 can be kept in a stable-steady state along the substrate moving direction. The rate of money is reduced, and the electric protection pattern is briefly explained. Figure 1 is the main part of the mouth splash device according to the first embodiment of the present invention. 562869 5. Description of the invention (Partial cut-away plan view; Figure 2 is a detailed view 1 shows a horizontal cross-sectional view of part a in FIG. 1; FIG. 3 is a view viewed from a direction A in FIG. 2; FIG. 4 is a view showing the appearance of the manifold 9 in FIG. 3; Explain a plasma shielding pattern shown in FIG. 2; of which: FIG. 5A is a perspective view of the plasma shielding plate π; FIG. 5B is a cross-sectional view of the plasma shielding plate 11 taken along line B_B of FIG. 5a; 6B is a graph showing the effects of changes in the composition of the processing gas on the visible light absorption coefficient and the sputtering rate (film thickness formed per unit time); Figure 6A shows the relationship between the amount of tf 〇2 introduced and the visible light absorption coefficient; Figure 6B Shows the relationship between the introduction amount and the splash rate; Figure 7 is a schematic diagram showing the measurement points of IT0 film properties in the example and comparative examples i to 3; Figure 8 is a processing gas supply member in the comparative example 丨And a schematic diagram of the configuration of a target 8; FIG. 9 is a diagram of a comparative example 3 A schematic diagram of the configuration of an industrial gas supply member and a target 8; FIG. 10 is a schematic diagram of a configuration of a process gas supply member and a target in a conventional spraying device; FIG. 11 is one of the second embodiments according to the present invention Partial cut-away plan view of the main part of the spraying device; Figure 12 is a drawing showing the structure of the spraying device 100 of Figure 11; Binding-13 V. Description of the invention (Ή) Figure 13 is Figure 11-ITO Partial cutaway longitudinal sectional view of the cathode 10 乜; ,, 14 are views of an opening of the concave portion of the cathode 12 of FIG. 13 _ ΙΤ cathode, and FIG. 15 is a partial cutaway of the IT0 cathode 104a A cross-sectional view; FIG. 16 is a diagram for explaining the cathode surfaces of the cathodes 10 and 100 in FIG. ^; FIG. 17 is a schematic diagram showing measurement points of properties of the ITO film; and FIG. 18 is for explanation A diagram of a conventional DC / RF stack type magnetron sputtering device. BEST MODE FOR CARRYING OUT THE INVENTION Now, an embodiment of the present invention will be described with reference to the diagram. (First Embodiment) FIG. A partial cut-away plan view of a main part of a spraying device according to an embodiment. quot; In Fig.1, the spraying device 1i includes a casing 3, which forms a vacuum 罜 2, a twelve-sided prism-shaped turntable (substrate holder) 4, which is arranged at the center of the casing 3 at The direction shown by the arrow in FIG. 1 is rotated by a motor (not shown); a pair of ITO cathodes 6 configured as a spray cathode in a peripheral side portion of the casing 3; and a pair of Si02 cathodes 7 which Opposed to IT〇 cathode 6 \ A plurality of substrates 5 (for example, four substrates 5) are arranged on each side surface of the turntable 4 in a vertical direction in a line, and each substrate 5 is 3⑽ to 5⑻ mm A rectangular color filter substrate having a vertical size and a horizontal size of 400 to 600 mm, wherein a color filter body (organic substance) made of an organic resin is coated on a surface of a glass substrate. By placing a plurality of substrates 5 at 562869

Directly arranged on each side surface of the turntable 4, the total area of the substrate 5 can be increased and can be changed! Manufacturing efficiency. _ A rectangular target 8 series with a vertical dimension of 18 mm to 100 mm and a horizontal dimension between 100 and 200 mm is attached to each part of the cathode 6 facing the vacuum chamber 2, and each target 8 series is sintered The body is made of 'wherein indium oxide and tin oxide are mixed at a predetermined ratio to form a ιτο film (transparent conductive film) on the substrate 5. The spraying device 1 uses a magnetron spraying method to spray the target 8 with ions in a plasma, and from the target 8 to form an ITO film and one of the substrates 5 mounted on the rotating turntable 4 An SiO2 film is used to form a substrate with a transparent conductive film. Specifically, the money equipment continuously rotates the turntable 4 at a predetermined rotation speed (2 to 4 revolutions per minute), and when each substrate 5 is attached to the front surface of the target 8 of each ITO cathode 6 from The raw material particles flying up from the target 8 are deposited on the substrate 5 to form an IT0 film until a predetermined film thickness is reached. A SiO2 film is then formed on the surface of the ITO film using the SiO2 cathode 7 as well until a predetermined film thickness is reached. It should be understood that the ITO film and the SiO2 film may have a reverse build order. In this embodiment, a magnetron sputtering method is used to spray the target 8 and thus a ιτο film is formed on each substrate 5 as described above. In the case where an IT0 film is formed on the substrate 5, one such as Organic substances such as color filters are coated on a surface of a glass substrate. Generally, the temperature of the substrate must not be greater than 250 ×: in the magnetron spray method. However, if an ITO film is formed at this temperature using magnetron nozzle sputtering, the resistivity can become 2000 · 88 or higher. In this case, the ITO film will not be sufficient as an electrode in a color liquid crystal display device. The nature. / -15- This paper size applies to China National Standard (CNS) Α4 specification (210X297 mm)

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Line 562869 A7 B7 V. Description of the invention (13) In the magnetron sputtering, in order to form a ITO with a low resistivity of not more than 200 cm when the substrate 5 is at a low substrate temperature of not more than 250 ° C. As a film, a DC / RF stacked type magnetron sputtering method is widely used, in which radio frequency (RF) power and direct current (DC) power are stacked to supply the ITO cathode 6. However, in the DC / RF stacked type magnetron sputtering method, a glow discharge system generated by a DC / RF stacked power supply for supplying power in which RF power and DC power are stacked has the following characteristics: Compared with The glow discharge generated by a DC power supply makes it more difficult to maintain a stable discharge state. In the DC / RF stacked type magnetron sputtering method, it is difficult to make the plasma generated from the glow discharge of the DC / RF stacked power supply have a homogeneous time and space, so it is especially important to ensure that it will eventually affect the plasma The homogeneity of the process gas. In addition, the stability of the plasma and the stability of the glow discharge are related to each other as a whole. Therefore, if the plasma maintains a stable state, the glow discharge will maintain a stable state. As a result, it is possible to reduce abnormal particles flying out of the target due to abnormal discharge. 8 Opportunities for occurrence of poor product quality caused by being attached to the substrate 5 outside the surface. FIG. 2 illustrates a horizontal cross-sectional view of a part of FIG. 1 in detail, and FIG. 3 is a view viewed from a direction A of FIG. 2. In FIG. 2, the target 8 is attached to a part of the ITO cathode 6 inside the vacuum chamber 2. A DC / RF stacked power supply (not shown) is disposed on a rear surface side of the target 8. This DC / RF stacked power supply supplies power of RF power and DC power stacked to the target 8 and the magnetic field member 12. The splattering of the target 8 is performed efficiently. In the spitting device 1, the substrate is rotated by the turntable 4 -16- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 562869 A7

5 When facing one of the positions of the target 8, each of the substrates 5 is coated with a surface of /: 5 to carry out a mouthful. The filter body, so when the substrate 5 is subjected to :: made-colored-base film or a transparent conductive == when it is oxidized or similar, it will be absorbed on the substrate = W on the surface of the substrate 5 ^ Group wounds on the surface and the color filter body: One of the characteristic gases of the E-formation is emitted, and this characteristic gas can be expressed by the general formula ⑶x (a < xg2), so this gas is hereinafter referred to as c0, /, not only Containing CO a C02 also includes gas with unstable ideal ratio. If this C0x is discharged into the vacuum chamber 2, it may consume processing:-oxygen component in the body 'or may reduce to increase the oxygen in the processing gas. Component. Therefore, the 'electricity' will have an undulating nature, so it may damage the uniformity of the film, and it may cause a problem. In addition, if the film is made of an oxide such as IT0, the fluctuation of the oxygen component in the process gas will directly affect the properties of the film. Figures 6A and 6B show experimental results of the effects of fluctuations in the amount of oxygen components in the processing gas when the ITO film is formed on the substrate 5. Figures 6a and 6B show that the amount of 〇2 introduced in a processing gas composed of ΑΓ and 〇2 changes with the amount of Ar introduced fixed at 300 cm3 / min (at standard conditions of 20 and 1 atmosphere). When measuring the visible light absorption coefficient and the spray rate (thickness of the film formed per unit time), it can be seen that the visible light absorption coefficient and the spray rate of the ITO film also change when the introduction amount of 〇2 is changed. In Figures 2 and 3, a pair of manifolds (gas pipes) 9 and 10 for supplying processing gas to the target 8 are arranged along the outer periphery of the target 8. Processing-17- This paper size is applicable to China National Standard (CNS) Α4 Specification (210X 297mm) Binding

Line 562869 A7 V. Description of the invention (15) The gas is made of an inert gas such as Ar, but a reactive gas such as O 2 and N 2 · may be added as needed. The manifolds 9 and 10 have a symmetrical shape along the f-axis of the target 8 plane and the vertical central axis, and the entire periphery is "". Specifically, the upper half of the manifold 9-mesh dagger And the manifold 10 surrounds the lower half of the mesh # 8 w ^ 0 疋 8. Moreover, the manifolds 9 and 10 each have a processing gas for supplying the processing gas to the upper surface of the eyepiece 8 A plurality of process gas discharge ports% or 10 &.-a process gas supply source η for supplying process gas is connected to, a pipe 9 '-a process gas supply source M for supply of process gas is connected to Manifold 10. The process gas supply source 13 controls the feed rate of the tube 9, and the process gas supply 14 controls the feed rate of the process gas to the manifold 10. The effect is that the process gas can be individually controlled for the manifold. Feed rates of 9 and 10. In this embodiment, the process gas supplied to the manifold 9 and the process gas system supplied to the manifold ι0 have the same composition. However, it is also possible to supply with different compositions and / or Process gases with different pressures for manifolds 9 and 10 respectively The thickness and quality of the IT0 film formed on the substrate 'result' may vary from place to place. When processing gases with different compositions and / or different pressures are supplied to different parts of the target 8, processing A slight change in the gas introduction state will greatly change ~ one of the properties of the sound film formation, such as reactive spraying, a light emission state detector or the like can effectively monitor changes in plasma concentration, or for target 8 Each part of the paper can be changed. 18- This paper size is applicable to China National Standard (CNS) A4 specification (210X297). Binding 562869 A7 B7 V. Invention description (16) Composition of industrial gas and / Or pressure feedback system to converge the change in light emission. Figure 4 shows the appearance of the manifold 9 shown in Figure 3, the following is only for the manifold 9, but the manifold 10 has a similar structure. In Figure 4, the manifold 9 has two process gas blow-out pipes 9b and 9c, and each process gas blow-out pipe 9b and 9c is equidistantly provided with process gas discharge ports 9a along the entire longitudinal direction. The interval (pitch) between adjacent process gas discharge ports 9a Preferably no more than 50 The size and shape of the process gas discharge port 9a are not particularly limited; an appropriate size and shape should be set so that the feed rate of the process gas on the target 8 is approximately the same for all the process gas discharge ports 9a. The pressure loss occurring in the longitudinal direction of the process gas blowing pipes 9b and 9c. The length L of each process gas blowing pipes 9b and 9c is preferably 800 mm, and the length L is set to an upper limit of 1,000 mm in order to suppress The process gas feed rate and pressure vary due to the difference in the distance between the process gas supply source 13 and each process gas discharge port 9a. The distance W between the process gas blowout pipes 9b and 9c is preferably 100 according to the target 8 size To 200 mm. The distance between the process gas discharge port 9a closest to the process gas supply source 13 and the process gas discharge port 9a farthest from the process gas supply source 13 is preferably not more than 1000 mm. In the case where the process gas is fed to a smaller area of the target 8, the process gas discharge port 9a closest to the process gas supply source 13 and the process gas discharge port 9a farthest from the process gas supply source 13 3-This paper Standards apply Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 562869 A7 B7 V. Description of the invention (the distance between 17 will be reduced. In this case, manifold 9 and manifold 1 may be integrated into A single manifold. The manifolds 9 and 10 are not arranged in a symmetrical shape along the horizontal and vertical central axes that are orthogonal to each other in the plane of the target 8 or the process gas discharge closest to the process gas supply source 13 The distance between the port 9a and the process gas discharge port 9a furthest from the process gas supply source 13 exceeds 1000 mm, or the manifolds 9 and 10 are not configured to surround the entire periphery of the target 8 (FIGS. 8 to 10) ), It is difficult to uniformly feed the processing gas above the entire surface of the target 8. As shown in FIG. 4, the manifold feeding the processing gas to each target 8 is divided into a manifold 9 and a manifold 10. Reduction of process gas in manifold 9 and 丨 〇 The lengths of the blow-out pipes 9b and 9c (10b and 10c) can reduce the difference in the processing gas feed rate and pressure caused by the position difference of the processing gas discharge port 9a (10a). According to this embodiment, the The manifold that feeds process gas to each target 8 is divided into two pieces, namely, manifold 9 and manifold 10, and manifolds 9 and ι0 are connected to process gas supply sources 13 and 14, respectively. As a result, even when the target With a large area, it is still possible to reduce the length L of the gas blown out of the pipe and the% (1 porphyrin and i0c). For this reason, the entire gas blowing & pipe and 9c (l0b) And l0c) generate a uniform processing gas feed rate and force. In Figure 2, the 'plasma shield plate 11 is arranged along the periphery of the target between the target 8 and the manifolds 9 and 10, and each plasma shield The plate u has a [shaped cross section and is formed-the cathode is used to shield components other than the target (ie, the main body of the ITO cathode 6 and the manifolds 9 and 10) from plasma during sputtering.

-20- 562869 A7 ----- B7 V. Invention] The angle through which the part of the body passes is turned by the semicircular processing gas through the hole Ua to about 45. . When manufacturing the test piece, the same process gas supply conditions and spray conditions were used for the examples and comparative examples, and described as follows: [Process gas supply conditions and spray conditions] I Objective film thickness: 180 nm, objective resistance: 1 〇Ω 2 · Target size: width 127mm, length 1625mm3 · Processing gas: Ar 600cm3 / min (300cm3 / min x one line), 〇2 2cm3 / min (1 m3) Cm / min x two pipelines) 4. Pressure of the film deposition chamber: 0.29 Pa (2.2 X 1 (Γ3 Torr) 5. Substrate temperature: 2000. Spray method: DC / RF stacked power supply (DC 1 · 5 watts, RF 3 · 0 watts) 7. Film formation time: about 25 minutes 8 · Substrate: 300 mm vertical x 400 m horizontal x thickness 0 7 mm (with color filter and Resin protective film) The measurement results of the properties of the ITO film of the test piece manufactured using the spraying device 1 under the above-mentioned processing gas supply conditions and spraying conditions are shown in Table i. In Table 1, as shown in FIG. Measure ιτ〇 film thickness (nm), surface resistance at measurement points 1 to 12 on 5 Ω) and resistivity (micro Ω • cm), and calculate the maximum, minimum, average, and distribution (variation) of each of the above, the distribution values in Table 1 are in terms of 〃 (maximum-minimum) / (2 X average value) X 100% 〃. -23- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 562869 A7 B7 V. Description of the invention (22) The component is the same as the above example Test pieces were prepared under the same process gas supply conditions and spray conditions. In this comparative example 1, the manifolds 9 and 10 are configured accordingly and the left / right direction of the target 8 is not symmetrical, and the process gas is only from one side Feed on the target 8. Other conditions such as the method for measuring the properties of the ITO film are the same as the above examples, and the measurement results are shown in Table 2. Table 2 ITO film thickness at the measurement point (nm) Surface resistance (Ω) Resistivity (μΩ (Cm) 1 162 11.4 184 2 171 10.6 181 3 174 10.2 178 4 179 10.1 181 5 172 10.3 176 6 178 10.1 179 7 173 10.2 177 8 189 9.7 184 9 197 9.5 186 10 195 9.4 183 11 198 9.3 184 12 198 9.2 183 maximum 198 11.4 186 minimum 162 9.2 17 6 Average 182 10.0 181 Distribution (%) ± 9.9 ± 11 · 0 ± 2.8 As shown in Table 2, the thickness distribution of the ITO film formed on the substrate 5 is ± 9.9%, and the distribution of the surface resistance is ± 11 · 0 %, So these distributions are larger than the example above. In this comparative example 1, it is impossible to add -25 as the example. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 562869 A7 B7 5. The invention description (26) did not produce a Uniform plasma. (Second Embodiment) Fig. 11 is a partially cutaway plan view of a main part of a spraying apparatus according to a second embodiment of the present invention. In FIG. 11, the spraying device 100 includes a casing 102 in which a vacuum 1: 101 is formed; a dodecagonal prism-shaped turntable (base material holding member) 103 is disposed at the center of the casing 102 and is shown in FIG. The direction of the arrow is rotated by a motor (not shown); a pair of ITO cathodes 104a and 104b configured as a sputtering cathode in a peripheral side portion of the casing 102; and a pair of Si02 cathodes 1. 05a and 105b, which are oppositely arranged with the ITO cathodes 104a and 104b. A plurality of substrates 106 (for example, four substrates 106) are arranged in a line in a vertical direction on each side surface of the turntable 103, and each substrate 106 is 300 to 500. A rectangular square with a vertical size of 400 mm and a horizontal size of 400 to 600 mm > Color filter, substrate 'A color filter (organic substance) made of an organic resin is coated on a glass substrate On one surface. By arranging the plurality of base materials 106 on each side surface of the turntable 10 in a vertical direction, the total area of the base material 106 can be increased and the manufacturing efficiency can be improved thereby. A large-area rectangular target 107 having a vertical size of 80 to 180 mm and a horizontal size of 100 to 200 mm is attached to a portion of each of the cathodes 104a and 104b facing the vacuum chamber 101. Each of the targets 107 is made of a sintered body, in which oxide oxide and tin oxide are mixed at a ratio of ^ 疋 to form an ITO film (conductive film) on the substrate 106. The spraying device 100 uses a magnetron spraying method to spray the target 107 with ions in a plasma, and forms an ITO film from the target 107 and installs it. -29 This paper size is applicable to Chinese national standards (CNS ) A4 specifications (210X 297 public love ^ ^^ ---

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562869 A7 B7 V. Description of the invention (27) One of the substrates 106 on the rotating turntable is a film, so as to produce a substrate with a transparent conductive film. Specifically, the spray device 100 continuously rotates the turntable ι03 at a predetermined rotation speed (2 to 4 revolutions per minute), and when each substrate 106 is attached to the cathode 104a or 104b by On the front surface of the target 107, the raw material particles flying from the target 107 are deposited on the substrate so as to form a ιτο film until a predetermined film thickness is reached. A SiO2 film is then formed on the surface of the ITO film similarly using the SiO2 cathodes 105a and 105b until it reaches a predetermined film thickness. It should be understood that the ITO film and the SiO2 film may have the opposite build order. FIG. 12 shows the structure of the spraying device 100 of FIG. 11, and FIG. 12 only shows the following required parts of the spraying device 100 schematically. In the spraying device 100, the vacuum chamber 101 in the casing 102 is maintained in a vacuum state by a vacuum pump 1 10, and at the same time, a processing gas is introduced from a spray gas cylinder n 丨 into the true 2 chamber 101 to adjust the vacuum chamber. The splash atmosphere in 〇1. The processing gas includes an inert gas such as Ar, but a reactive gas such as 〇2 or N2 may be added as needed. The substrate 106 is disposed on one of the ITO cathodes 104a to face the target 107. In order to generate a plasma to spray the target 107 in the vacuum chamber 101, a power supply unit 112 passes a A flexible metal strip 11 3 and a coaxial cable 11 7 are connected to the ITO cathode 104a. The power supply unit 112 has a circuit structure including a radio frequency (RF) power source 1 14 and a matching box 11 5 which are connected in series with each other and connected to a flexible metal band 13 and include a radio frequency power source i 4 and The matching box 115 is a direct current (DC) power supply n6 -30 connected in parallel and connected to one of the coaxial cables 117- This paper size applies to China National Standard (CNS) A4 (210X297 mm)

Line 562869 A7 B7 V. Description of the invention (28) With this circuit configuration, the radio T (RF) power supplied from the RF power source 114 via the matching box & is directly connected to the direct current (DC) power supplied from the DC power source 116 The sputtering power is supplied to the IT0 cathode 104a (DC / RF stacking method). The matching box 115 has a circuit mainly including a high-capacitance capacitor, thereby offsetting the effect of fluctuations in the impedance of the ITO cathode ⑽. As a result, it is possible to prevent the power supply using the DC / RF stacking method ^ r RF power components are affected by the impedance fluctuations of the ITO cathode 104a, and can reduce the glow discharge c and prevent abnormal discharges. This can prevent a large amount of foreign matter from being generated from the target and the components around the target 107. RF power is supplied to the Ιτ〇 cathode 10 through the flexible metal band 113, and dc power is supplied to the IT 0 cathode 1 through the coaxial cable 117. 〇4a. 'The above-obtained DC power and RF power are superimposed on each other and supplied to the ITO cathode 104a in j 2 to 101, in which the sputtering environment has been adjusted to generate a plasma. With this electricity, the plasma The target 10 was sprayed to form an ITO film on the substrate 106. The method of connecting the flexible metal strip 113 to the IT0 cathode 10 ° will now be described. Fig. 13 is a part of the IT0 cathode 104a of Fig. 11 Fig. 14 is a cutaway longitudinal sectional view. Fig. 14 is an end view of the opening of the concave portion of the cathode 1210. Fig. 15 is a partially cutaway cross-sectional view of the ITO cathode 104a of Fig. 11. The following description also follows You need to refer to Figure u and Figure 12; the same components in Figure u and Figure 12 are marked with the same number, and the following is for IT0 cathode 104a, but it should be noted that the difference between ITO cathode 104a and 104b is only the power supply for friction Installation position of unit 1 1 2 and connection position of flexible metal band 113., -31-Paper Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 562869 A7 B7 V. Description of the invention In the following, it is not necessary to mention the supply of DC power, so the reference drawing does not show the DC power department. As shown in FIGS. 13 to 15, the ITO cathode 104a has a cathode 120, and this cathode 120 is attached to a side portion of the housing 102, and a true 2 chamber 101 is formed in the housing 102. The target 107 passes through A support plate 121 is mounted on an inner surface of the ITO cathode 120, and a glass substrate (not shown) on which sparging can be performed is arranged in the vacuum chamber 101 toward the target 107, and the IT cathode 120 has A concave portion is formed on a rear surface side, and a sputtering magnet 22 is arranged in this concave portion. As described below, an RF connection conductor i 23 is installed in the concave portion of the cathode 120 In the opening of the shaped part, the rf connecting conductor, 123 and the concave part of the cathode 120 are covered by a cathode case 126 supporting the power supply unit 112. The RF connecting conductor 123 is stepped and contains copper Vertical conductors 124a and 124b (thickness 2mm, width i0mm, length ι〇66mm ) And copper horizontal conductors 125a to 125e, vertical conductors 124a and 124b are fixed to each side of the opening of the concave portion so as to be in surface contact with one end surface of the IT cathode 12o, and the horizontal conductors 125a to 125e are distributed at equal intervals and The vertical conductors l24a and 12 are connected together externally. The vertical conductors 2 ^ and one of the directions perpendicular to the moving direction of the substrate 106 (that is, along the longitudinal direction of the target) are in surface contact with the ITO cathode 120. . The power supply unit 112 is installed on an upper part of the IT0 cathode 104a (see FIG. 16), and the flexible metal band 113 (thickness 0.2 mm, width 40 mm) The output part leads out, and one end of the flexible metal strip i ^ 3 is connected to a roughly -32- by a bolt (not shown) to the horizontal conductor 125c.

This paper size applies to China National Standard (CNS) A4 (210X297 Public Love T binding)

562869 V. Description of the invention (30 central part. In the case of the ITO cathode 10, on the other hand, the power supply unit 112 is installed on the lower part of the ITO cathode 104b (see Figure 16), and In the case of 4a, the flexible metal band 213 is led out from an output portion of the power supply unit 112, and one end of the flexible metal band 13 is connected to a substantially central portion of the horizontal conductor 125c by a bolt (not shown). As mentioned above, the two power supply units 112, which are respectively used to supply the sputtering power supply IT0 cathode 104a and 10 servants, can be installed at different positions from each other in a direction perpendicular to the moving direction of the substrate 106, from The flexible metal strip 113 from each power supply unit 112 is preferably connected to the center of the horizontal conductor 125c in a substantially central portion of the RF connection conductor 123. The reason is that ... The RF power can then be isotropically propagated to the periphery of the target via the RF connection conductor 123 and the IT0 cathode ι20 in surface contact with the RF connection conductor 123. According to this embodiment, in the case of the ITO cathode i04a, Electricity The application unit 1 12 is mounted on the upper part of the ιτο cathode 104a and connected to a substantially central portion of the horizontal conductor lye via a flexible metal band 113; in the case of the IT0 cathode 104b, the 'power supply unit 112 It is installed on the lower part of the ITO cathode 104b and connected to the approximate central part of the horizontal conductor 125c via a flexible metal strip U3. Therefore, it is perpendicular to the direction of movement of the substrate 106. The directions are at different positions from each other. The two power supply units 112 supply sputtering power to the ITO cathode 120. As a result, the thickness distribution of the ITO film on the substrate 106 depending on the position of one power supply unit is based on the distribution of the thickness of the ITO film on the substrate 106 depending on the position of the other power supply unit. The thickness distribution of IT0 film on the material 106 is complementary. The overall target 107 produces an even-33- long rule formed near the target 107. (Applicable to China National Standard (CNS) M specification X Norgoire). 562869 A7 _________B7 V. Description of the invention (31) Uniform plasma gold degree 'Therefore, an IT0 film having a uniform thickness and quality can be formed over the entire substrate 106. In the above embodiment, three or more ιτο cathodes 104 may be provided. For example, in a case where three ITO cathodes 104 are provided, a power supply unit 112 is installed on each of the cathodes 104 The mounting positions of the power supply unit η2 on the ITO cathode 104 are distributed at equal distances in the vertical direction (the direction in which the substrate 106 moves in a vertical direction). A device form that is habitually used based on industrial factors such as the ability to increase the film formation rate without the need to apply large splash power to each target 107 (that is, without the risk of unstable discharge) uses a plurality of devices as in the above embodiment. ITO cathode 104 ′ The present invention takes advantage of this, but can also produce an important effect that a uniform ITO film can be formed on a large-area substrate 106. In the above embodiment, each ITO cathode! 〇4 is provided with a power supply unit 112, but a plurality of power supply units 112 may also be provided for each ITO cathode 104. In this case, the power supply unit 112 is installed on the ITO cathode 〇04. The positions are equally spaced in the vertical direction (the direction in which the moving direction of the substrate 106 is perpendicular). Because the flexible metal strip 1 13 is attached to the horizontal conductors 125a to 125e made of the same material (ie, copper) as the flexible metal strip 丨 3, the impedance of the ITO cathode / 120 due to the change in contact resistance can be prevented Variety. In addition, the splash power supplied through the horizontal conductors 125a to 125e is supplied from the vertical conductors 124 & and 124b installed horizontally to the longitudinal axis of the target 107 to the ITO cathode 120, so the spray power can be transmitted isotropically around the target 107. . In addition, the vertical conductors 124a and 124b and the ITO cathode 12-34- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 562869 A7 — __ B7 V. Description of the invention (32) Surface contact with each other Reliable sputtering power and the configuration of the 'RF connection conductor 123 on each IT0 cathode 104 is better such that: the periphery of the RF connection conductor 123 and the periphery of the target 107 extend flat, and the RF connection conductor The long side and the short side of 123 extend in the same direction as the long side and the short side of the target 107, respectively. As a result, the supplied mouth = power can be transmitted more isotropically around the target 107. There are no particular restrictions on the size of the RF connection conductor 123 and the method of connecting the flexible metal strips 3, as long as the details meet the purpose of the present invention. In addition, in general, various components such as cooling water pipes are mounted on the rear surfaces of the respective ITO cathodes 104a and 104b supplied with selling power, and rf is connected to the conductor 123 and the flexible metal band Π3. The configuration and connection system should not interfere with these components. The connection method of the coaxial cable 117 for supplying DC power may be the same as the connection method of the pull metal strip 1 1 3. · Also, the manufacturing material of the flexible metal band 113 is generally copper, but a material having good conductivity and appropriate corrosion resistance can also be used. In addition to copper, examples include silver, inscriptions, and gold. For the same reason, copper, silver, aluminum, gold, and the like can be selected as the manufacturing materials of the vertical conductors 124a and 124b and the horizontal conductors 125a to 125e. And 'In order to obtain a uniform film thickness distribution over all the substrates ι〇6 installed on each side surface of the turntable 1 () 3, the processing gas position fed from the spray gas cylinder ni into the vacuum chamber 101 can be manipulated And the gas pressure distribution, the shape of the target 107, and / or a film thickness correction plate may be used. In addition, each ITO cathode 104 has a power supply unit 112 -35- 562869 A7.

In case t, the power supply unit 112 can be installed on a subordinate of IT0 cathode 104, and the ground circuit is installed on ιτο cathode 104 through a variable capacitor with one touch. As a result, one of the electric power equal to the splash power returned to the power supply unit 112 through the opening of the cathode case 126 on which the power supply unit 2 is installed is grounded via the ground circuit, so that the overall uniform supply can be supplied to the ITO cathode 1 04. Splattered electricity distribution. Moreover, the above-mentioned embodiment is directed to the ITO cathodes 104a and 104b, but the present invention can also be applied to the Si02 cathodes 105a and 105b. (Example) A specific example of this embodiment will now be described. The four substrates 106 are arranged in a line (vertical direction) perpendicular to the rotation direction of the turntable i 03 in FIG. 11, and two power supply units 1 12 are installed on both sides of the center of the cathode box 126 as shown in FIG. 13. . A sputtering power was supplied to the ITO cathode 104 to form a ιτο film on the substrate ι06, thereby preparing a test piece. [ITO film forming conditions] 1. Objective film thickness: 180 nm, objective resistance: 10 Ω 2. Target size: 127 mm width, 1625 mm length 3. Processing gas: Ar 600 cm3 / min (300 cubic meters) Cm / min x two lines), 02 2 cm3 / min (1 cm3 / min x two lines) 4. Vacuum chamber pressure: 0.29 Pa (2.2 X 10 · 3 Torr) 5. Substrate temperature: 200 ° C 6.Spattering method: DC / RF stacking method (DC 1.5 仟 W, RF 3.0 Shiva) -36- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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7. Number of power supply units used: 2 8 • Film formation time: For example, about 25 minutes 9 • Base material: 0.7 mm x 300 mm; f χ4Π0 eight. a / Lane) uu A centimeter × 400 mm, with color filter and resin protective film as shown in Figure 17, four substrates 106 are mounted on the turntable 103 in the longitudinal direction of the target 107 It is arranged as a line in which the 300 cm side of the substrate 10 is mainly vertical, and there are three 性质 το film property measurement points on each substrate 106 in a direction corresponding to the longitudinal direction of the target 107. And these measurement points are numbered from the top to the bottom, and three property values are measured at each measurement point, namely ITO film thickness (耄 microns), surface resistance (Q), and resistivity (micro Q • cm), and The distribution (variation) of each measured property value is expressed as "± (maximum-minimum value) / (2χ average value) χΐ〇〇%". And, as in the comparative example, only one of the two power supply units 112 shown in FIG. 3 is used to supply the sputtering power to the ITO cathode 104a or 10 minutes for 50 minutes. A test film was formed on the material 106 (Comparative Examples 1 and 2). Table 5 shows the results of Comparative Example 1 obtained when the sputtering power is supplied to the ITO cathode 104 only from the upper power supply unit 12. -37- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 562869 A7 B7 V. Description of the invention (35) Table 5 ITO film thickness (nm) at the measurement point Surface resistance (Ω) Resistance Rate (μΩ · cm) 1 176 10.40 183 2 180 10.30 186 3 182 10.20 186 4 180 9.94 179 5 182 10.30 187 6 186 10.10 187 7 193 9.84 190 8 198 9.35 185 9 198 9.00 178 10 196 9.31 182 11 203 8.80 179 12 203 8.70 177 Maximum value 203 丨 10.40 190 Minimum value 176 8.70 177 Average value 190 9.68 183 Distribution (%) ± 7.1 ± 8.8 ± 3.6 As shown in Table 5, in Comparative Example 1, the smaller the number of measurement points, the more IT The smaller the film thickness distribution is. And the thickness distribution of ITO film is larger ± 7.1%. In addition, the smaller the number of measuring points, the greater the surface resistance, and the distribution of the surface resistance is larger than 8.8%. However, the position of the power supply unit 112 does not significantly affect the resistivity, and the resistivity distribution is only 3.6%; therefore, it is found that the surface resistance depends only on the film thickness. Table 6 shows the results of Comparative Example 2 obtained when only the sputtering power is supplied to the ITO cathode 104 from the lower power supply unit 112. -38- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297mm) 562869 A7 B7 V. Description of the invention (36 Table 6 ITO film thickness at the measurement point (in nanometers) Surface resistance (Ω) Resistivity ( ΜΩ cm) 1 199 9.21 183 2 199 9.35 186 3 196 1 9.36 183 4 198 9.45 187 5 190 9.72 185 6 175 10.20 178 7 179 10.00 179 8 173 10.20 177 9 180 10.10 182 10 175 10.20 179 11 172 10.60 183 12 163 11.30 185 Maximum value 199 11.30 187 Minimum value 163 9.21 177 Average value 184. 9.97 182 Distribution (%) ± 9.8 ± 10.5 Soil 2.7 As shown in Table 6, in Comparative Example 2, the more the number of measurement points, the more 〇The smaller the film thickness is, the larger the thickness of the ITO film is 9.8%. Also, the more the number of measurement points, the larger the surface resistance, and the larger the surface resistance distribution is 10 · 5%. However, As in Comparative Example 1, the position of the power supply unit 1 i 2 does not significantly affect the resistivity, and the resistivity distribution is only 2.7%. Different from the above, Table 7 shows that the film formation regulations using the example will Splattering '-# -39- I paper size applies to Chinese national standard (CNS) A4 size (210X297 male love) '' ---

Claims (1)

562869 A8 B8 C8 D8 Replacement of patent application scope (February 1992) Application patent scope L A spraying device comprising: a vacuum chamber; at least one cathode, which is arranged in the vacuum chamber and is attached with at least A substrate is disposed in a plate-shaped target facing the relationship, an organic substance is coated on one surface of the at least one substrate; and a processing gas supply member for feeding a processing gas into a vicinity of the target; Wherein, the processing gas supply member includes a manifold, the manifold has a shape symmetrical to each other along two mutually orthogonal central axes in a plane of the targets, and is configured to surround a whole periphery of the target, and processes A gas discharge port is distributed throughout the manifold, thereby discharging the processing gas to the target. 2. The spraying device according to item 1 of the patent application scope, wherein the manifold is divided into at least two manifold sections. 3. The spraying device according to item 2 of the patent application scope, wherein the processing gas supply member has at least two processing gas supply sources, and each of the at least two manifold sections is connected to one of the processing gas supply sources. 4. The spattering device according to any one of claims 1 to 3, wherein the process gas discharge ports include a plurality of holes or slits. 5. The splash device according to any one of claims 1 to 3, further comprising a plasma shielding plate configured to surround an entire periphery of the target so as to shield the cathode and the manifold during sputtering. It is not subject to electromagnetism, and each of the plasma shielding plates has a plurality of processing gas passage holes distributed throughout the plasma shielding plate, so as to adjust the size of the paper from the processing gas. The Chinese standard (CNS) ) A4 size (210X297 mm) 562869 A8 B8 C8 A volume of process gas discharged from the volume exhaust port toward the target. 6. If the patent application for item 4 of the money device, its entrance is-around the target-a plasma shield plate around the whole to shield the cathode and the manifold from plasma, and each of these 4 shield The plate has a plurality of the «shield plates distributed throughout the = gas through holes' to adjust the flow of the process gas discharged from the process gas discharge ports toward the heart. ~ 7 · If the spraying device with a patent scope of $ 5 is applied, each of the processing gas passing holes includes a semi-circular cutting hole. 8. The spraying device according to item [of the patent application range, wherein each of the processing through holes includes a semi-circular cut hole. 9. A sputtering device that forms a conductive film on at least one substrate by a DC / RF stacked magnetron sputtering method, the sputtering device includes: a vacuum chamber; at least one cathode, Arranged in the vacuum chamber and having a target mounted thereon; a moving member for moving at least one substrate in the vacuum chamber in a predetermined direction while keeping the at least one substrate facing the target; and a plurality of power sources A power supply unit, which is connected to the at least one cathode and is configured to supply the splash power in which DC power and radio frequency power are superimposed to the at least one cathode; wherein the plurality of power supply units are configured to be perpendicular to the predetermined direction; The spraying power is supplied to the at least one cathode at different positions from each other. -2-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 562869 Sixth, the scope of patent application shall reach the at least one cathode. 10. The device of claim 9 in the scope of patent application, wherein the positions of the plurality of slightly sourced supply units can be determined in such a manner that the film on at least one substrate depends on a position of one of the private sourced supply units / Thickness distribution is complementary to a thickness distribution of the thin film on the at least one substrate depending on the / position of an adjacent power supply unit 11. Such as the spray device of the scope of patent application No. 9 or 10 , Which further comprises a conductor configured to be in surface contact with the at least one Chen pole in a direction perpendicular to the predetermined direction, and wherein the power supply units are configured to supply the splash power to the via the conductor At least one cathode. 12. The spraying device as claimed in claim 9 or 10, wherein the at least two cathodes are arranged along the predetermined direction, and one of the power supply units is connected to one of the cathodes and the other The power supply unit is connected to another cathode. 13 · If the scope of patent application is the first! A sputtering device according to item 1, wherein the at least two cathodes are arranged along the predetermined direction, and one of the power supply units is connected to one of the cathodes, and the other of the power supply units is connected to the other of the cathodes . -3 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)