CN212152430U

CN212152430U - Vacuum sputtering coating device

Info

Publication number: CN212152430U
Application number: CN202020824491.2U
Authority: CN
Inventors: 胡兴微; 蒋玉东
Original assignee: Sichuan Mammoth Semiconductor Technology Co ltd
Current assignee: Sichuan Mammoth Semiconductor Technology Co ltd
Priority date: 2020-05-18
Filing date: 2020-05-18
Publication date: 2020-12-15
Anticipated expiration: 2030-05-18

Abstract

The utility model relates to the technical field of vacuum coating. The utility model discloses a vacuum sputtering coating device, set up A target and B target in this vacuum cavity including a vacuum cavity and interval, first power is connected respectively to A target and B target, the direction of the plasma of B target is towards the surface of A target, the direction of the plasma of A target is towards the base plate for deposit the material of A target and B target on the base plate and form the thin layer, still include first current conducting plate, first current conducting plate sets up the opposite side of keeping away from the A target at the base plate, an output of second power is connected to first current conducting plate. The utility model discloses a with the plasma of B target towards the surface of A target, the plasma of A target is towards the base plate direction, on the material of B target just deposits the A target earlier like this, then deposit the base plate with the material of A target together on, can realize the deposit of multicomponent thin layer very easily, and can improve the component homogeneity of the rete of depositing, can be used for the deposit of various different materials.

Description

Vacuum sputtering coating device

Technical Field

The utility model belongs to the technical field of vacuum coating, specifically relate to a vacuum sputtering coating device.

Background

The thin film layer is prepared by a sputtering method, and single-target sputtering deposition and double-target sputtering deposition can be adopted. The single-target sputtering deposition is performed by adopting a single plane target or a single rotating target, and as some thin film layers are formed by multiple components, the difficulty of manufacturing the target is increased if the target with the multiple components is adopted, and the conductivity of some single-component materials is good, and the conductivity of the multi-component materials prepared by mixing the single-component materials becomes poor, so that the deposition of the multi-component thin film layer becomes more difficult; even some materials cannot be prepared into multi-component targets, for example, materials of indium oxide doped with tungsten cannot be prepared into magnetron sputtering targets, because the density of the prepared materials is low, the materials can only be deposited by using ion reaction deposition equipment (namely RPD coating equipment), so that the deposition difficulty of the film is increased, and the manufacturing cost is high. The traditional vacuum coating deposition method has special requirements on the conductivity, density and the like of a target material, so that certain materials to be deposited can only be deposited by using a specific vacuum coating device, the quality of a deposited film layer is not ideal, and the preparation cost is high due to the factors.

While the above-mentioned problems can be solved by using twin target sputter deposition, the conventional twin target vacuum sputter coating apparatus has a structure as shown in fig. 1, and is provided with an a target 1 'and a B target 2', the a target 1 'and the B target 2' are respectively connected to power supplies 3 'and 4', the power supplies 3 'and 4' can be DC power supplies, AC power supplies, etc., the a target 1 'and the B target 2' can be both rotating cylindrical targets, or both planar targets, or a combination of one rotating cylindrical target and one planar target, the plasma 11 'of the a target 1' and the plasma 21 'of the B target' 2 'are parallel to each other and perpendicular to the surface of the substrate 5' to deposit on the surface of the substrate 5 'to form a multi-component thin film layer 6', although the two plasmas 11 'and 21' can also intersect and deposit on the surface of the substrate 5 'to form a multi-component thin film layer 6' after being respectively tilted at an angle, the reference numeral 7 ' in the figure is a gas inlet, and the gas inlet 7 ' is used for introducing gases, including inert gases and/or reactive gases, required for depositing the thin film layer 6 '. Although the traditional double-target sputtering coating device can easily realize the deposition of a multi-component thin film layer, the traditional deposited component uniformity is poor, and the quality of the film layer is poor.

Disclosure of Invention

An object of the utility model is to provide a vacuum sputtering coating device is used for solving the technical problem that above-mentioned exists.

In order to achieve the above object, the utility model adopts the following technical scheme: a vacuum sputtering coating device comprises a vacuum cavity, an A target and a B target which are arranged in the vacuum cavity at intervals, wherein the A target and the B target are respectively connected with a first power supply, the direction of the plasma of the B target faces the surface of the A target and is used for depositing the material of the B target on the surface of the A target, the direction of the plasma of the A target faces a substrate and is used for depositing the material of the A target and the material of the B target on the substrate to form a thin film layer, the vacuum sputtering coating device also comprises a first conductive plate, the first conductive plate is arranged on the other side, far away from the A target, of the substrate, and the first conductive plate is connected with an output end of a second power supply.

The utility model discloses another kind of technical scheme do: the utility model provides a vacuum sputtering coating device, including a vacuum cavity and interval setting A target and B target in this vacuum cavity, A target and B target are connected first power respectively, the direction of the plasma of B target is towards the surface of A target, be used for the material deposit of B target on the surface of A target, the direction of the plasma of A target is towards the base plate, be used for the material deposit of A target and B target on the base plate and form the thin layer, still include first conductive plate, second conductive plate and third conductive plate, first conductive plate sets up the opposite side of keeping away from A target at the base plate, an output of second power is connected to first conductive plate, the second conductive plate is located the one side of keeping away from B target of A target, the third conductive plate is located the one side of keeping away from A target of B target, second conductive plate and third conductive plate connect the two output ends of third power respectively.

Further, the first conductive plate, the second conductive plate and the third conductive plate are all metal plates.

Further, the distance between the A target and the B target can be adjusted.

Further, the A target and the B target are both rotating cylindrical targets; or the A target is a rotating cylindrical target and the B target is a planar target.

Further, the magnetic field intensity of the surface of the target A is not equal to that of the surface of the target B.

Further, the plasma display panel also comprises a baffle plate, wherein the baffle plate is blocked between the B target and the substrate.

Furthermore, the baffle is connected with an output end of the second power supply or the fourth power supply.

Further, the vacuum sputtering coating device is of a horizontal structure or a vertical structure

The utility model has the advantages of:

1. the utility model discloses a with the plasma of B target towards the surface of A target, the plasma of A target is towards the base plate direction, the material of B target just deposits on the A target earlier like this, then deposits on the base plate with the material of A target together, can realize the deposit of multicomponent thin layer very easily, and can improve the component uniformity of the rete of depositing; the multi-component film layer is easy to realize continuous large-scale production, the production efficiency can be improved, and the production cost of the multi-component film layer is reduced.

2. The distance between the A target and the B target of the utility model can be adjusted, thereby easily obtaining the needed multi-component film material; the second conductive plate and the third conductive plate which are connected with two output ends of the power supply are arranged, so that the target material A and the target material B are better mixed, and the magnetic field intensity of the surfaces of the target A and the target B is different, and a multi-component thin film layer with better quality can be deposited; the arrangement of the first conductive plate can enable the deposition process of the thin film layer to be more stable.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic structural view of a conventional twin-target vacuum sputter coating apparatus;

FIG. 2 is a schematic structural view of a vacuum sputtering coating apparatus of the present invention;

FIG. 3 is a schematic structural view of another vacuum sputter coating apparatus according to the present invention;

FIG. 4 is a schematic structural view of another vacuum sputter coating apparatus according to the present invention;

fig. 5 is a schematic structural view of another vacuum sputter coating apparatus of the present invention.

Detailed Description

To further illustrate the embodiments, the present invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. With these references, one of ordinary skill in the art will appreciate other possible embodiments and advantages of the present invention. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.

The present invention will now be further described with reference to the accompanying drawings and detailed description.

As shown in fig. 2, a vacuum sputtering coating apparatus includes a vacuum chamber and an a target 1 and a B target 2 disposed in the vacuum chamber at an interval, specifically, the a target 1 and the B target 2 are both rotating cylindrical targets, and of course, in other embodiments, the a target 1 may be a rotating cylindrical target and the B target 2 may be a planar target. The A target 1 comprises an A target material 12 and an A target magnet 11, and the B target 2 comprises a B target material 22 and a B target magnet 21, and the specific structure can refer to the existing vacuum sputtering coating target material structure, which is not described in detail.

The a target 1 and the B target 2 are respectively connected to a first power supply, specifically, the first power supply includes two independent power supplies, namely,

power supplies

3 and 4, respectively, and the a target 1 and the B target 2 are respectively connected to the

power supplies

3 and 4, although in other embodiments, the first power supply may have only one power supply, and the a target 1 and the B target 2 share one power supply.

The

power supplies

3 and 4 preferably use a DC power supply (direct current power supply) or an AC power supply (alternating current power supply), but are not limited thereto.

Specifically, the vacuum coating apparatus shown in FIG. 2 is in a horizontal configuration, i.e., the substrate 5 is horizontally disposed during deposition of the thin film layer 6, but may be in a vertical configuration, i.e., the substrate 5 is vertically disposed during deposition of the thin film layer 6, in other embodiments.

The plasma 23 of the B target 2 is directed toward the surface of the a target 1 for depositing the material of the B target 2 on the surface of the a target 1, and the plasma 13 of the a target 1 is directed toward the substrate 5 for depositing the material of the a target 1 and the B target 2 deposited on the a target 1 together on the substrate 5 to form the thin film layer 6.

By directing the plasma 23 of the B target 2 toward the surface of the A target 1 and directing the plasma 13 of the A target 1 toward the substrate 5, the material of the B target 2 is deposited on the A target 1 first and then deposited on the substrate 5 together with the material of the A target 1, the deposition of a multi-component thin film layer can be easily achieved, and the component uniformity of the deposited film layer can be improved.

In fig. 2, the substrate 5 is transported from left to right (with reference to fig. 2), but in other embodiments, the substrate may be transported from right to left.

In fig. 2, the B target 2 is disposed on the right side of the a target, but of course, in other embodiments, the B target 2 may be disposed on the left side of the a target.

Preferably, the substrate further comprises a first conductive plate 7, the first conductive plate 7 is disposed on the other side of the substrate 5 away from the a target 1 (i.e. below the substrate 5), the first conductive plate 7 is connected to an output terminal of a second power supply 8 (such as a positive terminal or a negative terminal of a DC power supply, or a live terminal or a neutral terminal of an AC power supply), and the second power supply 8 preferably uses the DC power supply or the AC power supply, but is not limited thereto. The provision of the first conductive plate 7 makes the deposition process of the thin film layer 6 more stable.

Preferably, the first conductive plate 7 is a metal plate, which is easy to implement, low in cost, good in conductive performance, and not easy to damage, but not limited thereto.

Preferably, the distance between the a target 1 and the B target 2 is adjustable, so that the desired multi-component thin film material can be easily obtained, and the method can be realized by adopting various existing mechanisms for adjusting the distance, which is not described in detail.

Preferably, the magnetic field intensity of the surface of the A target 1 is not equal to that of the surface of the B target 2, so that a multi-component thin film layer 6 with better quality can be deposited.

The a target material 12 and the B target material 22 may be conductive or non-conductive, and preferably, the a target material 12 and the B target material 22 both have certain conductivity, and the composition of the thin film layer to be deposited can be changed by changing parameters of a power supply, a distance between the two targets, a gas flow rate and the like, or of course, by changing the magnetic field strength of the a target magnet 11 and the B target magnet 21.

Preferably, a baffle 9 is further included, the baffle 9 is blocked between the B target 2 and the substrate 5, the baffle 9 is connected to an output terminal of the second power supply 8, a power supply is saved, and of course, in other embodiments, the baffle 9 can be connected to an output terminal of a separate power supply (fourth power supply) (e.g., a positive terminal or a negative terminal of a DC power supply, or a live terminal or a neutral terminal of an AC power supply). The baffle plate 9 is used to shield the plasma 24 material falling from the B target 2 from falling onto the surface of the substrate 5, thereby affecting the quality of the thin film layer 6 to be deposited.

Preferably, a heating element (not shown) may be disposed below the substrate 5 for heating the substrate 5.

Specifically, grounded

anodes

100 and 110 are further arranged in the vacuum cavity, the

anodes

100 and 110 are respectively connected with positive ends of the

power supplies

3 and 4, and when the

power supplies

3 and 4 are AC power supplies, the

anodes

100 and 110 can be omitted; the vacuum chamber is further provided with gas inlets 120, the gas inlets 120 are used for introducing gases required for depositing the film layer, including inert gases and/or reaction gases, the number of the gas inlets 120 is three, but not limited to this, in other embodiments, one or two or more than 3, etc. may also be provided.

Fig. 3 shows another structure of the vacuum sputtering coating apparatus of the present invention, which is different from the vacuum sputtering coating apparatus shown in fig. 2 in that: in fig. 3, the a target 1 is a rotating cylindrical target, and the B target 2 is a planar target.

Fig. 4 shows another structure of the vacuum sputtering coating apparatus of the present invention, which is different from the vacuum sputtering coating apparatus shown in fig. 2 in that: the second conductive plate 130 and the third conductive plate 140 are further included, the second conductive plate 130 is located on a side of the a target 1 far away from the B target 2, i.e., on a left side of the a target 1, the third conductive plate 140 is located on a side of the B target 2 far away from the a target 1, i.e., on a right side of the B target 2, and the second conductive plate 130 and the third conductive plate 140 are respectively connected to two output ends of a third power source 150 (e.g., a positive/negative end of a DC power source, or a live wire/neutral end of an AC power source, which may be reversed in sequence). By providing the second conductive plate 130 and the third conductive plate 140 connected to both output terminals of the third power source 150, the a target 1 material and the B target 2 material are better mixed.

The third power supply 150 may be an AC power supply, a DC power supply, or an RF power supply (radio frequency power supply), etc.

Preferably, the second conductive plate 130 and the third conductive plate 140 are metal plates, which are easy to implement, low in cost, good in conductive performance, and not easy to damage, but not limited thereto.

Fig. 5 shows another structure of the vacuum sputtering coating apparatus of the present invention, which is different from the vacuum sputtering coating apparatus shown in fig. 4 in that: in fig. 5, the a target 1 is a rotating cylindrical target, and the B target 2 is a planar target.

A plurality of vacuum sputter coating apparatuses as shown in fig. 2 and/or fig. 3 and/or fig. 4 and/or fig. 5 may be assembled together to form a continuous deposition line for depositing a thin film layer having a composition varying by assembling different targets in each vacuum sputter coating apparatus.

The vacuum sputter coating apparatus of the present invention will be described by several embodiments.

Example 1

In a vacuum sputtering coating device, an A target 1 is an indium oxide target, a B target 2 is a tungsten oxide target, the A target 1 and the B target 2 are both rotary cylindrical targets, a heating element in the vacuum sputtering coating device is started to enable the temperature of a substrate 5 to be stabilized at 200 ℃, a proper amount of argon gas is introduced, power supplies 3 and 4(DC power supplies) connected with the targets are started to carry out pre-deposition on the targets, meanwhile, a second power supply 8 is started, the distance between the A target 1 and the B target 2 is set, a plasma 11 of the A target 1 faces to the substrate 5, and a plasma 21 of the B target 2 faces to the surface of the A target 1; after the pre-deposition is finished, the substrate 5 is conveyed into a vacuum sputtering coating device, then the substrate 5 is subjected to film layer deposition, an indium oxide doped tungsten thin film layer 6 is formed on the substrate 5, and the square resistance of the obtained multi-component thin film layer is 35 ohm/□ under the condition that the thickness is 100 nm.

Example 2

In a vacuum sputtering coating device, an A target 1 is an indium-gallium-selenium target, a B target 2 is a copper-selenium target, the A target 1 is a rotary cylindrical target, the B target 2 is a planar target, a heating element in the vacuum sputtering coating device is started to enable the temperature of a substrate 5 to be stabilized at 400 ℃, a proper amount of argon gas is introduced, power supplies 3 and 4(AC power supplies) connected with the targets are started to carry out pre-deposition on the targets, meanwhile, a second power supply 8 and a third power supply 150 are started, the distance between the A target 1 and the B target 2 is set, a plasma 11 of the A target 1 faces to the substrate direction, and a plasma 21 of the B target 2 faces to the surface of the A target 1; and after the pre-deposition is finished, the substrate 5 is conveyed into a vacuum sputtering coating device, and then the multi-component thin film layer deposition is carried out on the substrate 5, so that the CIGS thin film layer 6 is directly generated on the substrate 5.

Comparative example 1

Conventional practice for depositing indium oxide doped tungsten films has been to use only RPD coating apparatus, as is well known in the art. The target material used for deposition is an indium oxide doped tungsten target (namely an IWO target), IWO is loaded into RPD coating equipment, a heating element in the device is started to enable the temperature of a substrate to be stabilized at 200 ℃, a proper amount of argon is introduced to pre-deposit the IWO target material, after the pre-deposition is finished, the substrate is transmitted into the RPD coating equipment, then film deposition is carried out on the substrate, a film layer of indium oxide doped tungsten is formed on the substrate, and the square resistance of the obtained multi-component film layer is 53 ohm/□ under the condition that the thickness is 100 nm. Because the IWO target has a low density, it can only be deposited by RPD coating equipment, which results in a high cost for manufacturing the film.

Comparative example 2

The CIGS multi-component thin film layer is deposited by using the CIGS target material, the CIGS multi-component thin film layer can only be deposited by using RF (radio frequency) coating equipment due to poor conductivity of the CIGS target material, the deposition rate of the CIGS thin film layer deposited by using the RF coating equipment is very low, the production efficiency is very low, the CIGS target material is difficult to prepare, the target material is expensive to sell, the manufacturing cost of the thin film layer is high, and large-scale mass production is difficult to carry out.

To sum up, the utility model discloses a with the plasma of B target towards the surface of A target, the plasma of A target towards the base plate direction, the material of B target just deposits on the A target earlier like this, then deposits on the base plate with the material of A target together, can realize the deposit of multicomponent thin layer very easily, and can improve the component uniformity of the rete of depositing; the multi-component film layer is easy to realize continuous large-scale production, the production efficiency can be improved, and the production cost of the multi-component film layer is reduced.

While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. The utility model provides a vacuum sputtering coating device, includes a vacuum chamber body and interval setting A target and B target in this vacuum chamber body, and a target and B target are connected first power respectively, its characterized in that: the plasma direction of the B target faces the surface of the A target and is used for depositing the material of the B target on the surface of the A target, the plasma direction of the A target faces the substrate and is used for depositing the material of the A target and the B target on the substrate to form a thin film layer, the plasma processing device further comprises a first conductive plate, the first conductive plate is arranged on the other side of the substrate, which is far away from the A target, and the first conductive plate is connected with one output end of a second power supply.

2. The utility model provides a vacuum sputtering coating device, includes a vacuum chamber body and interval setting A target and B target in this vacuum chamber body, and a target and B target are connected first power respectively, its characterized in that: the plasma direction of B target is towards the surface of A target, be used for depositing the material of B target on the surface of A target, the plasma direction of A target is towards the base plate, be used for depositing the material of A target and B target on the base plate and form the thin film layer, still include first conductive plate, second conductive plate and third conductive plate, first conductive plate sets up the opposite side of keeping away from A target at the base plate, an output of second power is connected to first conductive plate, the second conductive plate is located one side of keeping away from B target of A target, the third conductive plate is located one side of keeping away from A target of B target, second conductive plate and third conductive plate connect the two output ends of third power respectively.

3. The vacuum sputter coating apparatus according to claim 2, characterized in that: the second conductive plate and the third conductive plate are both metal plates.

4. The vacuum sputter coating apparatus according to claim 1 or 2, characterized in that: the first conductive plate is a metal plate.

5. The vacuum sputter coating apparatus according to claim 1 or 2, characterized in that: the distance between the A target and the B target can be adjusted.

6. The vacuum sputter coating apparatus according to claim 1 or 2, characterized in that: the target A and the target B are both rotary cylindrical targets; or the A target is a rotating cylindrical target and the B target is a planar target.

7. The vacuum sputter coating apparatus according to claim 1 or 2, characterized in that: the magnetic field intensity of the surface of the target A is not equal to that of the surface of the target B.

8. The vacuum sputter coating apparatus according to claim 1 or 2, characterized in that: the plasma display panel further comprises a baffle plate, and the baffle plate is blocked between the B target and the substrate.

9. The vacuum sputter coating apparatus according to claim 8, characterized in that: the baffle is connected with an output end of the second power supply or the fourth power supply.

10. The vacuum sputter coating apparatus according to claim 1 or 2, characterized in that: the vacuum sputtering coating device is of a horizontal structure or a vertical structure.