KR20030013379A - Sputtering device - Google Patents

Abstract

The sputtering apparatus 1 forms the ITO film | membrane by the target 8 in the glass substrate 5 provided in the carousel 4 which sputters and rotates the target 8 with the ion in plasma using the magnetron sputtering method. The manifolds 9 and 10 are arranged in the plane of the target 8 so as to be symmetrical to each of the mutually perpendicular central axes, and are arranged to surround the entire circumference of the target 8 and the process gas outlets 9a and 10a are provided. It is installed to be distributed throughout the manifolds 9 and 10 to discharge the process gas to the target 8.

Description

Sputtering Device {SPUTTERING DEVICE}

The substrate with a transparent conductive film used for a color liquid crystal display device generally uses a color filter substrate which coats a protective film made of the same organic resin on a color filter made of an organic resin (organic substance) coated on a glass substrate. It is produced by forming and forming a dielectric transparent electrode (transparent conductive film) in one shape thereon. The transparent conductive film thus formed forms a desired wiring form normally by wet etching. As a material of the transparent conductive film, indium oxide (hereinafter referred to as ITO: Indium Tin Oxide) doped with oxide is generally used.

In the case of forming the ITO film on the color filter substrate, the expansion of the field of use of the color liquid crystal display device and the performance thereof are remarkably improved, thereby forming an ITO film having a uniform film thickness and its performance over the entire surface of the large area substrate. Unique consideration is required. For example, a stable discharge must be carried out over a large area of the target surface and a uniform plasma must be generated without the influence of the gas component emitted from the organic resin coated on the surface of the color filter substrate.

As a method of forming an ITO film, the magnetron sputtering method is widely used. The magnetron sputtering method is suitable for forming a thin film on a large area color filter substrate, and has an advantage of reducing gas component generation from organic matter by performing the thin film formation at a relatively low temperature.

In such a magnetron sputtering method, a technique notable for introducing a process gas that plays an important role in the formation of a film thickness or film quality of a thin film on a color filter substrate in a technique for controlling a plasma state during sputtering is proposed.

For example, Japanese Patent Application Laid-Open No. 05-148627 proposes a sputtering apparatus in the arrangement in which the inlet of the process gas is close to the cathode. According to this apparatus, since the positional relationship between the inlet of the process gas and the cathode is fixed, it is not necessary to consider the positional relationship between the cathode of the process gas inlet and the positional adjustment of the inlet after maintenance and inspection is unnecessary.

Further, Japanese Patent Application Laid-Open No. 05-243155 discloses a sputtering apparatus for forming a metal coating on a semiconductor substrate. There is an effect that can illustrate the reduction of the material.

In the above-described conventional sputtering apparatus, the former merely arranges the introduction position of the process gas in the vicinity of the cathode, so that it is difficult to obtain a uniform gas distribution over the target entire surface of a large area.

In the latter case, if the diameter of the substrate and the target is about 150 to 200 mm and is about this area, it is assumed that the uniform gas supply is relatively easy, but if the substrate area is large, the distribution of the process gas to the periphery and the center of the substrate is one. It is expected to go out of shape. In addition, the latter is not a device that takes into account the influence of special gaseous components emitted from the organic material coated on the surface of the color filter substrate.

By the way, the ITO film is formed on a large area color filter substrate made of a cathode at a desired size below to reduce its manufacturing cost. Sputtering for forming an ITO film is performed at a temperature lower than the heat resistance temperature of the organic resin from the color filter or the protective film made of the organic resin. For this reason, as for the method for forming the ITO film, any magnetron sputtering capable of forming the ITO film at a relatively low temperature is used as described above. Magnetron sputtering applies the sputter power to the cathode to generate a plasma under a process gas atmosphere in a vacuum chamber by glow discharge, thereby sputtering a target on the plasma to form an ITO film on the substrate.

Among these magnetron sputtering, the magnetron sputtering of the DC / RF superposition method using superimposed high frequency (VHF, RF) power to the direct current (DC) power as the sputter power is relatively low temperature compared with the DC power method using only DC power. Even in the figure, it is possible to form an ITO film having a low ratio resistance. This is because the sputtering power can be reduced compared to that of the DC power system, so that damage to the ITO film due to high energy Ar ions in the plasma is reduced, and the mobility (electron of the carrier in the material) determines the conductivity of the ITO film. (E.g., Japanese Patent Application Laid-open No. Hei 10-265926) The magnetron sputtering method of DC / RF superimposition method can provide a glow discharge in time. There is also known a method of maintaining the plasma in a stable state by keeping it in a stable state (for example, see Japanese Patent Application Laid-Open No. 2000-034564).

18 is an explanatory diagram of a magnetron sputtering apparatus of a conventional DC / RF superposition method.

Conventional DC / RF superposition magnetron sputtering apparatus has an ITO cathode installed through an insulator (not shown) on the side of the caching 202 and the caching 202 to form a vacuum chamber 201 therein, as shown in FIG. Has (203). On the inner surface of the ITO cathode 203, the backing plate 204 is connected, and a large area target 205 is provided. In the vacuum chamber 201, a sputtered glass substrate (not shown) is disposed corresponding to the target 205.

In the ITO cathode 203, a recess is formed on the back side, and a magnet 206 for sputtering is disposed therein. The side member which forms the recessed part of the ITO cathode 203 is generally comprised from the plate made of stainless from a viewpoint of securing the strength of the ITO cathode 203, and the back side is an opening. In addition, the ITO cathode 203 is covered with a cathode case 209 supporting the power supply 208.

The power supply device 208 supported by the cathode case 209 has a circuit configuration consisting of a high frequency (RF) power supply and a matching box connected in series with each other and a series (DC) power supply connected in parallel to these. Here, the matching box has a circuit mainly composed of a capacitor of large capacity.

Such a power supply device 208 supplies the ITO cathode 203 as sputter power that overlaps DC power and RF power. The output 210 of RF power from the matching box of the power supply 208 connects a flexible metal 211 made from equal to the ITO cathode 203 in the center of the point contact 212 on the cross section of its side member. Contact at). The output 213 of DC power of the power supply 208 connects the coaxial cable 214 connected in parallel with the RF power to the ITO cathode 203 at the point contact 215 at the center on the cross section of its side member. Contact. Thereby, the sputter power supplied from the power supply device 208 propagates isotropically around the target 205.

However, in the conventional DC / RF superposition magnetron sputtering apparatus shown in FIG. 18, the sputtering power is different from that of the ITO cathode 203 made of mutually dissimilar metal and each of the flexible metal band 211 and the coaxial cable 214. Impedance that connects the contact portions 212 and 215 to the entire ITO cathode 203 changes, so that the glow discharge cannot be maintained in a stable state over time, and abnormal discharges or non-uniform plasmas frequently occur. This change in impedance strongly affects the generation of plasma than the RF power component.

In addition, since the film thickness of the ITO film on the substrate becomes smaller than the film thickness of other positions on the substrate, the film thickness of the ITO film becomes nonuniform at the position corresponding to the power supply device 208 supported by the cathode case 209. This is because some of the high frequency components of the sputter power supplied to the ITO cathode 203 are leaked into the matching box through the opening of the cathode case 209, so that the power is not uniformly supplied to the entire surface of the ITO cathode 203, or the matching is performed. This is because the high frequency noise generated in the box interferes with the RF power supplied to the ITO cathode 203 so that the plasma density placed at the position corresponding to the point contact portion 212 is reduced.

The first object of the present invention is to eliminate the influence of gaseous components emitted from the organic material coated on the surface of the color filter substrate and to supply the process gas uniformly over the entire surface of the target, and the film thickness and the film quality on the front surface of the substrate. It is providing the sputtering apparatus which can form this uniform film.

Moreover, the 2nd object of this invention is to provide the sputtering apparatus which can form the film | membrane whose film thickness is uniform mutually over the whole board | substrate.

TECHNICAL FIELD This invention relates to a sputtering apparatus. Specifically, It is related with the sputtering apparatus which manufactures the board | substrate with a transparent conductive film for liquid crystal display devices.

1 is a partially cutaway plan view of a main part of a sputtering apparatus according to a first embodiment of the present invention.

2 is a horizontal sectional view showing the details of a part in FIG.

3 is an explanatory view seen from the direction A of FIG.

4 is an external view of the manifold 9 in FIG.

FIG. 5 is an explanatory view of the plasma shield plate 11 in FIG. 2, (a) is a perspective view thereof, and (b) is a cross sectional view relating to the line B-B in (a).

FIG. 6 is a simplified diagram showing the influence of visible light absorption and sputtering rate (film thickness) caused by component fluctuations in process gas, (a) shows the relationship between O ₂ introduction amount and visible light absorption, and (b) The relationship between the amount of O ₂ introduced and the sputtering rate is displayed.

FIG. 7 is a simplified diagram showing measurement points of ITO film thickness characteristics in Examples and Comparative Examples 1 to 3. FIG.

8 is a simplified diagram showing the arrangement of the process gas supply means and the target 8 in Comparative Example 1. FIG.

9 is a simplified diagram showing the arrangement of the process gas supply means and the target 8 in Comparative Example 3. FIG.

Fig. 10 is a simplified diagram showing the arrangement of the process gas supply means and the target in the conventional sputtering apparatus.

It is a partially notched top view of the principal part of the sputtering apparatus which concerns on 2nd Embodiment of this invention.

12 is a configuration diagram of the sputtering apparatus 100 of FIG. 11.

13 is a partially cutaway longitudinal sectional view of the ITO cathode 104a in FIG.

14 is a cross-sectional view of the recess opening of the ITO cathode 120 of FIG.

15 is a partially cutaway cross-sectional view of the ITO cathode 104a in FIG.

FIG. 16 is an explanatory view of the cathode surfaces of the ITO cathodes 104a and 104b in FIG.

17 is a simplified diagram showing a measurement point of ITO film properties.

18 is an explanatory diagram of a magnetron sputtering apparatus of a conventional DC / RF superposition method.

In order to achieve the first object, the sputtering apparatus of the present invention is provided with a vacuum chamber and at least one cathode configured to be provided with a plate-like target disposed in the vacuum chamber and disposed opposite to a substrate coated with an organic substance on a surface thereof. A sputtering apparatus comprising a process gas supply means for supplying a process gas in the vicinity, wherein the process gas supply means surrounds the entire circumference of the target having a symmetrical shape on each of the central axes orthogonal to each other in the plane of the target. And a process gas discharge port which is disposed so as to be distributed throughout the manifold for discharging the process gas to the target.

According to the above configuration, the manifold has a symmetrical shape on each of the central axes orthogonal to each other in the plane of the target, is arranged to surround the entire circumference of the target, and a process gas outlet for discharging the process gas is distributed throughout the manifold. Since it is installed, it is possible to supply a uniform process gas over the target front surface through the process gas discharge port while eliminating the influence of the gas component emitted from the organic material coated on the surface of the substrate when sputtering the target, It is possible to form a film with a uniform film thickness and film quality.

The sputtering apparatus of the present invention is further characterized in that the manifold is divided into two or more.

According to the above configuration, since the manifold is divided into two or more, it is possible to shorten the manifold so as to prevent the supply of process gas and the reduction of the pressure due to the length of the manifold.

Further, the sputtering apparatus of the present invention is characterized in that the process gas supply means includes two or more process gas supply sources, and the manifold divided into two or more is connected to the process gas supply source, respectively.

According to the above configuration, since two or more divided manifolds are each connected to the process gas supply means, it is possible to individually control and manage the supply amount and pressure of the process gas.

In addition, the sputtering apparatus of the present invention is characterized in that the process gas outlet comprises a plurality of holes or slots.

According to the above configuration, since the process gas outlet consists of a plurality of holes or slots, it is possible to easily disperse and arrange the process gas outlet over the entire surface of the target.

In addition, the sputtering apparatus of the present invention is provided so as to surround the entire circumference of the target has a plasma shield plate for shielding the plasma during sputtering from the cathode and the manifold, the plasma shield plate is discharged from the process gas discharge port The process gas is rectified toward the target, and has a plurality of process gas through holes provided by being dispersed throughout the plasma shield plate.

According to the above configuration, since a plurality of process gas passage holes provided in the plasma shield plate shielding the plasma during sputtering from the cathode and the manifold rectify the process gas discharged from the process gas discharge port toward the target, the plasma during sputtering It is also possible to maintain the effect of shielding the cathodes from the cathode and manifold and to evenly distribute the process gas over the target front.

In addition, the sputtering apparatus of the present invention is characterized in that each of the process gas passage holes is made of a semicircular cut-out hole.

According to the above configuration, since each of the process gas passage holes is made of a semicircular cut-out hole, a sufficient rectification effect can be obtained by simple processing.

In order to achieve the second object, the sputtering apparatus of the present invention is moved in a vacuum chamber and at least one cathode disposed in the vacuum chamber and a target in which the target is installed and a substrate in the vacuum chamber facing the target. And a plurality of power supply devices connected to the moving means and the cathode and supplied to the cathode as sputtering power in which DC power and high frequency power are superimposed, wherein the plurality of power supply devices are in a direction perpendicular to the predetermined direction. The sputtering apparatus which forms a conductive thin film by the magnetron sputtering method of the DC / RF superposition method on the said board | substrate characterized by supplying the said sputter | spatter power to the said cathode in mutually different positions.

According to the above configuration, since the plurality of power supplies supply the sputter power to the cathodes at different positions with respect to the direction perpendicular to the moving direction of the substrate, it is possible to make the density of the plasma formed near the target across the target surface uniform. Therefore, it is possible to form a thin film having a uniform film thickness with each other over the entire substrate.

Further, in the sputtering apparatus of the present invention, the position of the plurality of power supply units is based on one of the power supply positions, and the other one of the power supply positions where the film thickness distribution of the thin film on the substrate is adjacent to one of the power supply positions. And is determined to complement the film thickness distribution of the thin film on the substrate.

According to the above configuration, the positions of the plurality of power supply units are thin on the substrate based on one of the power supply positions and the film thickness distribution of the thin film on the substrate is based on the other of the power supply positions adjacent to one of the power supply positions. Since it is decided to complement the film thickness distribution of the film, it is possible to form a uniform thin film due to the same film thickness over the entire substrate.

The sputtering apparatus of the present invention is further characterized in that the power supply device is configured to supply the sputter power to the cathode through a conductor on a surface contact plate along the vertical direction.

According to the above configuration, since the power supply device is configured to supply the sputter power through the conductor on the surface contact plate along the vertical direction to the cathode, the sputter power propagates isotropically around the target, and thus the plasma formed near the target. It is possible to surely spatially equalize the density of.

Further, in the sputtering apparatus of the present invention, at least two cathodes are disposed along the predetermined direction, one of the power supply devices is connected to one of the cathodes, and the other of the power supply devices is connected to the other of the cathodes. It is characterized by.

According to the above configuration, since at least two cathodes are arranged along the moving direction of the substrate, it is possible to maintain a stable state of glow discharge and to improve a thin film formation rate.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings.

(First embodiment)

1 is a partially cutaway plan view of a main part of a sputtering apparatus according to an embodiment of the present invention.

In FIG. 1, the sputtering apparatus 1 is rotated in the direction of the arrow in the center of the drawing by a caching 3 for forming a vacuum chamber 2 therein and a motor arranged in the center of the caching 3 and not shown. 12 pairs of main carousels (substrate holders) 4, a pair of ITO cathodes 6 and 6 serving as sputtering cathodes arranged at the periphery of the caching 3, and the ITO cathodes 6 and 6; With opposed SiO ₂ cathodes 7, 7.

On each side of the carousel 4, a plurality of substrates 5 are arranged in series in the vertical direction, for example, four are arranged. Each board | substrate 5 is the color filter board | substrate of the longitudinal direction of 300-500 mm x 400-600 mm in length, coat | covering the organic resin color filter (organic substance) on the surface of a glass substrate. By arrange | positioning the board | substrate 5 to the perpendicular direction of each side surface of the carousel 4, it is possible to increase the total area and to improve manufacturing efficiency. Each of the ITO cathodes 6 and 6 is provided with a longitudinal cathode 8 having a length of 800 to 1800 mm x a width of 100 to 200 mm in a portion adjacent to the vacuum chamber 2. The cathode 8 is made of a sintered body in which indium oxide and tin oxide are blended in a predetermined ratio to form an ITO film (transparent conductive film) on the substrate 5.

The sputtering apparatus 1 uses the magnetron sputtering method to form an ITO film and an SiO ₂ film according to the target 8 on a substrate 5 provided in the carousel 4 which rotates when sputtering the target 8 to ions in the center of the plasma. To form a substrate with a transparent conductive film. In other words, the sputtering apparatus 1 continuously rotates the carousel 4 at a predetermined rotational speed (2-4 revolutions per minute) so that the substrate 5 has the front surface of the target 8 installed on the ITO cathodes 6 and 6. When passing, the raw material particles blown from the target 8 are deposited on the substrate 5 until the ITO film reaches a predetermined thickness, and then the SiO ₂ cathodes 7 and 7 have the same shape on the surface. The SiO ₂ film is made until it reaches a predetermined film thickness. The order of deposition of the ITO film and the SiO ₂ film may be reversed.

In the present embodiment, the magnetron sputtering method is used to sputter the target 8 to form an ITO film on the substrate 5. In the case of forming an ITO film on the substrate 5 on which the surface of the glass substrate is coated with organic substances such as color filters, the magnetron sputtering method generally requires the substrate temperature to be 250 ° C or lower. However, at that temperature, an ITO film formed by the magnetron sputtering method was formed and the specific resistance was 200. It becomes .cm or more, and becomes an insufficient characteristic as an electrode for color liquid crystal display devices.

Therefore, in the magnetron sputtering method, the substrate temperature of the substrate 5 is 200 even at a low temperature of 250 ° C or lower. In order to form a low ITO film having a resistivity of less than .cm, a DC / RF superimposition magnetron sputtering method for supplying the ITO cathode 6 with superimposed high frequency RF on a direct current DC is widely implemented.

By the way, in the DC / RF superimposition magnetron sputtering method, the glow discharge generated by the DC / RF superimposition power supply for supplying high frequency superimposed power to the DC maintains the discharge state more stably than the glow discharge due to the DC power supply. Has characteristics.

Therefore, the DC / RF superposition magnetron sputtering method makes it relatively difficult to maintain spatially and temporally the homogeneity of plasma generated by the glow discharge according to the DC / RF superposition power supply. It is especially important to secure. In addition, since the stability of the plasma and the stability of the glow discharge are integrally affected and mutually influenced, keeping the plasma in a stable state is to preserve the glow discharge in a stable state. As a result, it is possible to reduce quality defects caused by abnormal particles flying out from the surface of the target 8 in accordance with the abnormal discharge and adhering to the substrate 5.

FIG. 2 is a horizontal sectional view showing the details of a part in FIG. 1, and FIG. 3 is an explanatory view seen from the direction A in FIG.

In FIG. 2, the ITO cathode 6 has a target 8 in a portion adjacent to the vacuum chamber 2. On the rear side of the target 8, a DC / RF superimposed power supply (not shown) for supplying the target 8 with power superimposed on a direct current and a magnetic field means 12 for sputtering the target 8 efficiently are arranged. . Sputtering is performed on the sputtering apparatus 1 when the board | substrate 5 by the rotation of the carousel 4 passes through the position which opposes the target 8.

Since the substrate 5 is coated with a color filter made of an organic substance on its surface, when the substrate 5 is heated, and when a base film such as silicon oxide or a transparent conductive film is formed on the surface of the substrate 5 by sputtering, The specific gas which consists of the adsorption component of the surface of the board | substrate 5, and the volatile component inside is discharge | released. The specific gas is represented by the general formula CO _x (0 <x ≤ 2) (hereinafter, this specific C gas is called CO _x ), and includes not only CO and CO ₂ but also stoichiometrically unstable gas. CO _x is released into the vacuum chamber 2 and consumes an oxygen component in the process gas or increases an oxygen component in the process gas in which CO _x is reduced. As a result, the properties of the plasma change and the homogeneity of thin film formation is lost. In the case of an oxide such as ITO in a thin film, the variation of oxygen components in the process gas directly affects the properties of the thin film.

Experimental results of investigating the effects of variations in the oxygen component in the process gas when forming the ITO film on the substrate 5 are shown in Figs. 6A and 6B. 6 (a) and 6 (b) show the Ar introduction amount in the process gas consisting of Ar and O ₂ , respectively, at 300 cm 3 / min (standard condition: 20 ° C., 1 atm) and varying the O ₂ introduction amount. The visible light absorption rate and sputtering rate (film thickness) of are measured. The result is found out to the visible light absorption rate and the sputter rate of the ITO film changes according to the variation in the O ₂ introduced amount.

2 and 3, a pair of manifolds (gas pipes) 9, 10 are provided along the outer periphery of the target 8 to supply a process gas to the target 8 around the target 8. It is arranged. The process gas is made of an inert gas such as Ar, but a reactive gas such as O ₂ or N ₂ is added as necessary.

The manifolds 9 and 10 are arranged in the plane of the target 8 so as to be symmetrical to each of the horizontal center axis and the vertical center axis which are perpendicular to each other, and surround the entire circumference of the target 8. In other words, the manifold 9 is arranged to surround the upper half of the target 8, and the manifold 10 is arranged to surround the lower half of the target 8. In addition, the manifold 9 has a plurality of process gas outlets 9a for supplying uniform process gas over the entire surface of the target 8, and the manifold 10 also has a plurality of process gas outlets ( 10a).

The manifold 9 is connected to a process gas supply source 13 for supplying a process gas, and the manifold 10 is connected to a process gas supply source 14 for supplying a process gas. The process gas supply source 13 controls the process gas supply amount of the manifold 9. In addition, the process gas supply source 14 controls the supply amount of the process gas of the manifold 10. This makes it possible to individually control the process gas supply amounts to the manifolds 9 and 10.

The process gas supplied by the manifolds 9 and 10 may use the same composition, but may also introduce process gas of a different composition and pressure into each of the manifolds 9 and 10. This makes it possible to partially vary the film thickness and film quality of the ITO film on the substrate 5.

When supplying process gas having different compositions and pressures to each part of the target 8, the variation of the sputtering concentration such as reactive sputters in which a subtle change in the process gas introduction state greatly affects the film formation characteristics is monitored by a light emission state detector or the like. It is conceivable to make a fieldback system that changes the process gas composition and the pressure of each part of the target 8 so as to converge the light emission variation in a part and make it effective.

4 is an external view of the manifold 9 in FIG. The following description is directed only to the manifold folder 9, but the manifold folder 10 has the same configuration.

In FIG. 4, the manifold 9 has two process gas outlet pipes 9b and 9c, and each of the process gas outlet pipes 9a and 9b is dispersed in the process gas chamber at equal intervals throughout the longitudinal direction thereof. The outlet 9a is provided.

The interval (pitch) of the process gas discharge ports 9a and 9a is preferably 50 mm or less. Although the size or shape of the process gas outlet 9a is not particularly limited, the process gas supply amount to the target 8 is entirely controlled in consideration of the pressure loss occurring in the longitudinal direction of each of the process gas outlet pipes 9b and 9c. It is good to set suitably so that it may be the same across gas extraction pipes 9b and 9c.

The length L of each of the process gas blowout pipes 9b and 9c is preferably 800 mm. The length L is set with an upper limit of 1000 mm so as to suppress the process gas supply amount and the pressure variation in accordance with the difference in the distance from the process gas supply source 13 to each process gas discharge port 9a. The distance W between the process gas blowout pipes 9b and 9c is preferably 100 to 200 mm in accordance with the size of the target 8.

The distance between the process gas outlet 9a closest to the process gas source 13 and the process gas outlet 9a farthest is preferably 1000 mm or less. When the process gas is supplied to the target 8 having a relatively small area, the distance between the process gas outlet 9a closest to the process gas source 13 and the process gas outlet 9a farthest is shortened. (9) and the manifold folder 10 may be integrated.

When the manifolds 9 and 10 are arranged in a symmetrical manner with respect to the horizontal center axis and the vertical center axis which are orthogonal to each other in the plane of the target 8, the process gas discharge port closest to the process gas source 13 ( In the case where the distance between the farthest process gas outlet 9a and 9a) is greater than 1000 mm and disposed so as to surround the entire circumference of the target 8 (FIGS. 8 to 10), the entire surface of the target 8 is covered. It becomes difficult to supply process gas uniformly.

As shown in FIG. 4, the process in the manifolds 9 and 10 by dividing the manifold which supplies process gas to one target 8 into the manifold 9 and the manifold 10. As shown in FIG. It is possible to shorten the lengths of the gas ejection sections 9b and 9c, thereby reducing the difference in the supply amount and the pressure of the process gas generated according to the position of the process gas discharge ports 9a and 10a.

According to the present embodiment, the manifold for supplying the process gas to the target 8 is divided into manifolds 9 and 10, and the process gas supply sources 13 and 14 are connected to the manifolds 9 and 10, respectively. Therefore, even if the target 8 has a large area, it is possible to shorten the length L of the process gas outlet pipes 9b and 9c, and to equalize the source and pressure of the process gas to the process gas outlet pipes 9b and 9c. It is possible.

In FIG. 2, a plasma shield plate 11 is arranged between the target 8 and the manifold 9 and between the target 8 and the manifold 10, respectively, in connection with the outer circumference of the target 8. . Plasma shield plate 11 is an L-shaped cross-sectional shape that forms a cathode for shielding the member-side ITO cathode 6 body and manifolds 9 and 10 from the plasma during sputtering other than the target 8 in accordance with the plasma. Configure.

The plasma shield plate 11 passes through a plurality of process gases dispersed throughout the longitudinal direction of the plasma shield plate 11 to uniformly supply the process gas discharged from the manifolds 9 and 10 to the target 8. The sphere 11a is provided. The process gas passage 11a is arranged with respect to the process gas discharge ports 9a and 10a of the manifolds 9 and 10. The process gas passage 11a is formed of a semicircular cut-out hole as shown in FIG. 5 to be described later.

5: is explanatory drawing of the plasma shield plate 11 in FIG. 2, (a) is its sectional view, (b) is sectional drawing which concerns on the line B-B of (a).

In Fig. 5 (a), the process gas passage 11a is formed by bending a semicircular cut out groove at an angle of about 45 degrees toward the target 8 side. When the process gas passes through the process gas passage 11a, the bent portion changes the flow direction of the process gas. In this way, it is possible to stir and simultaneously rectify the process gases discharged from the manifolds 9 and 10 and to bring the process gases to the target 8 surface with a more uniform supply amount and pressure.

When the process gas passage 11a is formed as a simple hole, the process gas discharged from the position away from the target 8 has a flow distribution corresponding to the position of the process gas discharge port 9a and the uniform supply amount. It is difficult to reach an overpressure process gas on the target 8 surface.

According to the above embodiment, the manifolds 9 and 10 having a form symmetrical to each of the central axes orthogonal to each other in the plane of the target 8 are arranged to surround the front surface of the target 8 and the target 8 Since the process gas outlets 9a and 10a are distributed and installed in the entire manifold 9 and 10 for discharging the process gas to the exhaust gas, the gas component emitted from the organic substance coated on the surface of the substrate 5 is discharged. It is possible to supply the process gas uniformly over the entire surface of the target 8 without removing the influence of, and to form a uniform film thickness and film quality on the entire surface of the substrate 5.

(Example)

Hereinafter, the Example of this embodiment is described.

This inventor makes the test piece which forms an ITO film in the board | substrate 5 using the sputtering apparatus 1 demonstrated in the said embodiment. Moreover, the test piece of the same form is made using the thing from which arrangement | positioning of the said sputtering apparatus 1, the manifolds 9 and 10, and the target 8 differs. Then, the film thickness and the film quality (surface resistance) of the ITO film formed on each test piece, that is, the characteristics of the ITO film are measured.

Specifically, four substrates 5 having a length of 300 mm x 400 mm are installed in the carousel 4 in the sputtering apparatus 1 in parallel with the longitudinal direction (up-down direction) of the target 8, and the substrate A test piece having an ITO film formed on (5) is made. As shown in FIG. 7, the measurement point of the ITO membrane characteristic in each test piece is about 12 pieces for each color filter substrate parallel to the longitudinal direction of the target 8, respectively.

In this embodiment, as shown in FIG. 3, two process gas supply means, a manifold 9 and a process gas supply 13, a manifold 10 and a process gas supply 14, are arranged with respect to the target 8. do. The diameter of the manifolds 9 and 10 is 5 mm, the diameter of the process gas outlet 9a is 1.5 mm, the pitch is 40 mm (equal intervals), the process gas supply source 13 and the process gas supply source 14. The distance between the closest process gas outlet 9a and the furthest process gas outlet 9a is 800 mm. Moreover, the diameter of the semicircular process gas passage 11a provided in the plasma shield plate 11 is 10 mm, and the direction which changes a part of process gas is about 45 degree | times.

Process gas supply conditions and sputtering conditions at the time of preparation of the said test piece are as follows in common in an Example and a comparative example.

[Process Gas Supply Conditions and Sputtering Conditions]

1.Target Thickness: 180 nm, Target Resistance: 10Ω

2. Target Size: Width 127 mm, Length 1625 mm

3. Process gas: Ar 600 cm 3 / min (300 cm 3 / min x 2 systems)

O ₂ 2 cm 3 / min (1 cm 3 / min x 2 systems)

4. Deposition chamber pressure: 0.29 Pa (2.2 x 10 ^-3 Torr)

5. Substrate temperature: 200 ℃

6. Sputter method: DC / RF superimposed power supply (DC 1.5 kW, RF 3.0 kW)

7. Deposition time: about 25 minutes

8. Size of substrate (5): length 300 mm x width 400 mm x thickness 0.7 mm

(With color filter and resin protective film)

Table 1 shows the measurement results of the characteristics of the ITO film in the test piece made under the process gas supply conditions and the sputtering conditions. In Table 1, the film thickness (nm), surface resistance (Ω), and specific resistance (ITO) of the ITO film at measurement points 1 to 12 on the substrate 5 shown in FIG. Cm) and calculate their maximum, minimum, average, and distribution (deviation). In the table, the distribution value is expressed as a percentage (%) with a ± sign on (maximum value-minimum value) / (2 x average value).

Measuring point ITO film thickness (nm) Surface resistance (Ω) Resistivity ( Cm) One 181 9.9 179 2 182 9.7 177 3 182 9.9 180 4 180 10.3 185 5 178 10.0 178 6 176 10.4 184 7 172 10.6 182 8 177 10.2 180 9 178 10.3 183 10 178 10.1 179 11 178 10.1 179 12 174 10.7 186 Maximum value 182 10.7 186 Minimum 172 9.7 177 Average 178 10.2 181 Distribution(%) ± 2.8 ± 4.9 ± 2.5

In Table 1, the film thickness distribution of the ITO film is ± 2.8%, the surface resistance distribution is ± 4.9%, and the film thickness and film quality characteristics within an acceptable range of the product can be obtained. In the present embodiment, even in the case of performing sputtering using the large area target 8, the film thickness and the film quality over the entire area of the large area substrate made up of the plurality of substrates 5 according to the process gas supply means in this embodiment. It is shown that it is possible to form this uniform film.

(Comparative Example 1)

As shown in FIG. 8, the process gas supply conditions using the process gas supply means which arrange | positioned the manifold 9, 10 only to the width direction (left-right direction) of the target 8 using the same process as the said embodiment, and Make specimens under sputtering conditions (Comparative Example 1).

In Comparative Example 1, the manifolds 9 and 10 are supplied with the process gas in one direction to the target 8 in such a manner as to reduce the symmetry in the left and right directions of the target 8. The measurement method of the other ITO film | membrane characteristic is the same as that of the said Example, and the measurement result is shown in Table 2.

Measuring point ITO film thickness (nm) Surface resistance (Ω) Resistivity ( Cm) One 162 11.4 184 2 171 10.6 181 3 174 10.2 178 4 179 10.1 181 5 172 10.3 176 6 178 10.1 179 7 173 10.2 177 8 189 9.7 184 9 197 9.5 186 10 195 9.4 183 11 198 9.3 184 12 198 9.2 183 Maximum value 198 11.4 186 Minimum 162 9.2 176 Average 182 10.0 181 Distribution(%) ± 9.9 ± 11.0 ± 2.8

In Table 2, the film thickness distribution of the ITO film formed on the substrate 5 is ± 9.9%, the surface resistance distribution is ± 11.0%, and the distribution is larger than in the above embodiment. In this comparative example (1), it is conceivable that the plasma is maintained in a constant state during the film formation so that the process gas is uniformly supplied over the entire surface of the target 8 having a large area as in the embodiment.

(Comparative Example 2)

Instead of the embodiment, the test piece is made in the hole of a simple diameter of 10 mm and the process gas supply conditions and sputtering conditions similar to the said Example instead of the form of the process gas passage opening 11a provided in the plasma shield plate 11. The measurement method of the other ITO film | membrane characteristic is the same as that of the said Example, and the measurement result is shown in Table 3.

Measuring point ITO film thickness (nm) Surface resistance (Ω) Resistivity ( Cm) One 179 9.8 176 2 184 9.7 179 3 184 10.2 188 4 181 10.2 184 5 179 10.5 188 6 179 10.7 191 7 178 10.9 193 8 179 11.2 200 9 181 11.1 201 10 177 11.0 194 11 184 11.2 205 12 193 10.9 210 Maximum value 193 11.2 210 Minimum 177 9.7 176 Average 182 10.6 192 Distribution(%) ± 4.4 ± 7.1 ± 8.8

In Table 3, the film thickness distribution of the ITO film formed on the substrate 5 is ± 4.4%, the surface resistance distribution is ± 7.1%, and the distribution is slightly larger than the above embodiment, but slightly compared with Comparative Example 1. small. The result shows that the process gas passage 11a shown in the said embodiment has the effect of supplying process gas uniformly over the whole surface of the target 8 of a large area.

(Comparative Example 3)

As shown in FIG. 9, the process gas supply conditions similar to those of the above-mentioned embodiment are made by using a process gas supply means in which a pair of the manifold 9 and the process gas supply source 13 are arranged in pairs with respect to the target 8. And test pieces under sputtering conditions.

In the comparative example (3), the distance of the position closest to the furthest from the process gas supply source 13 of the process gas discharge port 9a provided in the manifold 9 is located in the longitudinal direction (up-down direction) of the target 8. It is set to 1600mm like approximately.

A process gas supply source 13 is one system, but the total feed rate of the process gas is in the above Examples and Comparative Example 1, Ar is 600 ㎤ / min, O ₂ is 2 ㎤ / minute as in the second. The measurement method of the other ITO film | membrane characteristic is the same as that of the said Example, and the measurement result is shown in Table 4.

Measuring point ITO film thickness (nm) Surface resistance (Ω) Resistivity ( Cm) One 165 10.1 167 2 175 10.2 178 3 176 10.0 176 4 180 10.0 181 5 181 9.7 176 6 179 10.2 183 7 182 9.8 179 8 192 9.5 183 9 193 9.5 183 10 189 9.6 182 11 186 9.4 175 12 191 9.9 190 Maximum value 193 10.2 190 Minimum 165 9.4 167 Average 182 9.8 179 Distribution(%) ± 7.7 ± 4.1 ± 6.3

In Table 4, the distribution of the film thickness of the ITO film formed on the substrate 5 is ± 7.7% and the surface resistance is ± 4.1%, which is slightly larger than that of the above embodiment.

In this comparative example 3, since the distance between the position closest to the process gas supply source 13 of the process gas discharge port 9a provided in the manifold 9 and the furthest position is longer than 1000 mm, each process gas discharge port It is conceivable that the supply amount or pressure of the process gas discharged at 9a is scattered to generate a homogeneous plasma over the entire surface of the target 8.

(Second embodiment)

11 is a partially cutaway plan view of the main portion of the sputtering apparatus according to the embodiment of the present invention.

In FIG. 11, the sputtering apparatus 100 has an arrow in the center of the drawing by a caching 102 for forming a vacuum chamber 101 therein and a motor (moving means) arranged in the center of the caching 102 and not displayed. A dozen main carousel (substrate holder) 103 which rotates in the direction, a pair of ITO cathodes 104a and 104b which are sputtering cathodes arranged at the circumferential side of the caching 102, and the pair of ITO cathodes SiO ₂ cathodes 105a and 105b are disposed to face 104a and 104b.

On each side of the carousel 103, a plurality of substrates 106 are arranged in series in the vertical direction, for example, four are arranged. The board | substrate 106 is a color filter substrate of the long direction of 300-500 mm x 400-600 mm in width | variety with the organic resin color filter (organic substance) coat | covered on the surface of a glass substrate. By arranging a plurality of substrates 106 in the vertical direction of each side surface of the carousel 103, it is possible to increase the total area and increase the manufacturing efficiency. Each of the ITO cathodes 104a and 104b is provided with a large area cathode 107 in the longitudinal direction of a length of 800 to 1800 mm x 100 to 200 mm in a portion adjacent to the vacuum chamber 101. The cathode 107 is made of a sintered body in which indium oxide and tin oxide are blended in a predetermined ratio to form an ITO film (conductive thin film) on the substrate 106.

Such a sputtering apparatus 100 uses a magnetron sputtering method and an ITO film and SiO in accordance with the target 107 on the substrate 106 provided in the carousel 103 which rotates when sputtering the target 107 to ions in the center of the plasma. ₂ film | membrane is formed and the board | substrate 106 with a transparent conductive film is manufactured. That is, the sputtering apparatus 100 continuously rotates the carousel 103 at a predetermined rotational speed (2 to 4 revolutions per minute) so that the substrate 106 has the front surface of the target 107 installed on the ITO cathodes 104a and 104b. When passing, the raw material particles flying out from the target 107 are deposited on the substrate 106 until the ITO film reaches a predetermined thickness, and then the SiO ₂ cathodes 104a and 104b are formed on the surface of the same shape. The SiO ₂ film is made until it reaches a predetermined film thickness. The order of deposition of the ITO film and the SiO ₂ film may be reversed.

12 is a configuration diagram of the sputtering apparatus 100 of FIG. 11.

FIG. 12 schematically shows and displays only the components necessary for explanation in the sputtering apparatus 100 of FIG.

In the sputtering apparatus 100, the vacuum chamber 101 in the caching 102 is maintained in vacuum by the vacuum pump 110, and the process gas is introduced into the vacuum chamber 101 from the sputter gas cylinder 111 and the vacuum chamber 101 is provided. Inner sputter atmosphere is adjusted. In this case, the process gas is made of an inert gas such as Ar, but a reactive gas such as O ₂ or N ₂ is added as necessary.

The substrate 106 is disposed at a position facing the target 107 on the ITO cathode 104a. The power supply 112 is connected to the ITO cathode 104a via a coaxial cable 117 and a flexible metal band 113 for generating a plasma in the vacuum chamber 101 to sputter the target 107.

The power supply 112 is connected in series with each other and in parallel with the high frequency (RF) power supply 114 and the matching box 115 connected to the flexible metal strip 113 and to the coaxial cable 117. Has a circuit configuration consisting of a direct current (DC) power source 116. The high frequency (RF) power of the RF power supply 114 supplied by connecting the matching box 115 by this circuit structure and the direct current (DC) power of the DC power supply 116 supplied directly are made into sputter | spatter power, and an ITO cathode Supply to 104a. (DC / RF superposition)

The matching box 115 has a circuit composed mainly of a large capacity capacitor mainly for eliminating the influence of the impedance variation of the ITO cathode 104a. This prevents the drawback of the power supply by the DC / RF superposition method, that is, the RF power component from being affected by the impedance variation on the ITO cathode 104a side, stabilizes the glow discharge, and prevents the occurrence of the so-called abnormal discharge. And as a result, a large amount of foreign matter can be prevented from being generated from the target 107 or its peripheral member.

RF power is supplied to the ITO cathode 104a through the flexible metal band 113 and through the coaxial cable 117.

The sputter power in which the DC power and RF power superimposed by the above generate | occur | produce the plasma supplied to the ITO cathode 104a in the vacuum chamber 101 with which the sputter atmosphere was adjusted, and sputter | spatters the target 107 with the plasma. To form an ITO film on the substrate 106.

Next, the connection method of the flexible metal stand 113 to the ITO cathode 104a is demonstrated.

FIG. 13 is a partially cutaway longitudinal cross-sectional view of the ITO cathode 104a in FIG. 11, and FIG. 14 is a sectional view of the recess opening of the ITO cathode 120 in FIG. 13, and FIG. 15 is an ITO in FIG. A partially cutaway cross-sectional view of the cathode 104a. The following description refers to FIGS. 11 and 12 and like elements in FIGS. 11 and 12 are given the same reference numerals. However, since the ITO cathodes 104a and 104b differ only in the installation position of the power supply device 112 or the connection position of the flexible metal stand 113, the following description focuses on the ITO cathode 104a.

In the following description, since description about DC power supply is not necessary, the part regarding DC power is not shown also in the figure to which it refers.

The ITO cathode 104a has the ITO cathode 120 provided in the side part of the caching 102 which formed the vacuum chamber 101 inside, as shown to FIGS. 13-15. The target 107 is installed inside the ITO cathode 120 by connecting the packing plate 121. Moreover, in the vacuum chamber 101, the suitable glass substrate (not shown) sputtered is arrange | positioned facing the target 107. As shown in FIG. The ITO cathode 120 has a recess formed on the rear side thereof, and a magnet 122 for sputtering is disposed therein. The RF connection conductor 123 mentioned later is provided in the opening part of the recessed part of this ITO cathode 120. FIG. In addition, the recess of the ITO cathode 120 and the RF connection conductor 123 are covered with the cathode case 126 supporting the power supply 112.

The RF connecting conductor 123 is made of a ladder and is made of copper longitudinal conductors 124a and 124b (2 mm thick and 40 in width) fixed in the state of surface contact on the cross section of the ITO cathode 120 at both sides of the concave opening. mm, length 1066 mm) and the transverse conductors 125a to 125e made of copper with their longitudinal conductors 124a and 124b connected at equal intervals. The longitudinal conductors 124a and 124b are in surface contact with a direction perpendicular to the moving direction of the substrate 106, that is, the longitudinal direction of the target 107.

On the top of the ITO cathode 104a, a power supply 112 is installed (see FIG. 16), and a flexible metal strip 113 (0.2 mm thick, 40 mm wide) is taken out from the output of the power supply 112. Its end portion is connected to a substantially central portion of the transverse conductor 125c with a bolt (not shown). On the other hand, the ITO cathode 104b is provided at the bottom thereof with a power supply 112 (see FIG. 16), and in the same manner, a flexible metal stand 113 is pulled out from the power supply output 112 and shown at its end. The bolt which is not connected is connected to the substantially center part of the transverse conductor 125c.

As such, the two power supply devices 112 supplying the sputter power to the ITO cathodes 104a and 104b can be provided at different positions in relation to the direction perpendicular to the moving direction of the substrate 106. The flexible metal strip 113 taken out of the power supply 112 is preferably connected to the center portion of the transverse conductor 125c almost at the center portion of the RF connection conductor 123. This is because the RF power supplied to the center portion of the RF connection conductor 123 is capable of isotropically propagating to the periphery of the target 107 by connecting the RF connection conductor 123 and the ITO cathode 120 which is in surface contact with it. Because.

According to the present embodiment, the power supply 112 is installed above the ITO cathode 104a and is connected to the almost center of the transverse conductor 125c via the flexible metal band 113 and the power supply 112 is connected to the ITO. The cathode 104b is installed below it and is connected to the center of the transverse conductor 125c via a flexible metal band 113 so that the two power supplies 112 are perpendicular to the direction of movement of the substrate 106. To supply the sputter power to the ITO cathodes 120 which are located at different positions relative to each other, and thus the film thickness distribution of the ITO film on the substrate 106 based on one power supply location is based on the other power supply location. Since the film thickness distribution of the ITO film on the dull substrate 106 is complemented, it is possible to equalize the density of the plasma formed in the vicinity of the target 107 over the entire surface of the target 107, and thus the film thickness of the entire surface of the substrate 106. This uniform ITO membrane It is possible to form.

In the above embodiment, three or more ITO cathodes 104a may be provided including the ITO cathode 104b. For example, if the number of ITO cathodes 104a is three, the power supply unit 112 is installed in each of the ITO cathodes 104a, and the installation positions of the three power supply units to the ITO cathode 104 are related to each other in the vertical direction. Place at equal intervals.

The use of a plurality of ITO cathodes 104a and 104b as in the above-described embodiment is an industrial reason for increasing the film formation rate without a large load of sputter power to each target 107, that is, without causing instability of discharge. It is a type of device that has been conventionally adopted. The present invention takes advantage of this and brings great efficiency to form a uniform ITO film on a large area substrate 106.

In the above embodiment, one power supply device 112 is disposed for one ITO cathode 104a, but a plurality of power supply devices 112 may be disposed for one ITO cathode 104a. In this case, the installation positions of the plurality of power supply devices 112 on the ITO cathode 104a are distributed at equal intervals in relation to each other in the vertical direction.

Since the flexible metal band 113 is installed on the same type of metal as the flexible metal band 113, that is, the transverse conductors 125a to 125e made of copper, the impedance change of the entire ITO cathode 120 according to the change of the contact resistance is changed. It is possible to prevent it.

Furthermore, the sputter power supplied through the transverse conductors 125a to 125e is supplied to the ITO cathode 120 from the longitudinal conductors 124a and 124b installed in parallel with the target 107, so that the surroundings of the target 107 It is possible to propagate sputter power isotropically. Moreover, since the longitudinal conductors 124a and 124b are in surface contact with the ITO cathode 104a, it is possible to reliably propagate the sputter power.

In addition, the shape of the RF connection conductor 123 on the ITO cathode 104a is parallel to the outer edge of the target 107 and its long and short sides are the same as the long and short sides of the target 107, respectively. It is preferably arranged so that it is directed toward. Thereby, it is possible to propagate the sputtered power supplied isotropically to the periphery of the target 107.

The dimensions of the RF connection conductor 123 and the connection method of the flexible metal band 113 are in accordance with the well-known aspects of the present invention, but are not particularly limited. In general, since the back surface of the ITO cathodes 104a and 104b into which the sputter power is introduced is provided with various shapes including cooling water piping, it may be arranged so as not to interfere with each other.

The connection method of the coaxial cable 117 which supplies DC electric power may also be made into the same method as the connection method of a flexible metal stand.

In addition, the material of the flexible metal band 113 is generally copper, but is selected as a material having high electrical conductivity and moderate weather resistance. Other than copper, silver, aluminum, gold, and the like are exemplified.

The materials of the longitudinal conductors 124a and 124b and the transverse conductors 125a to 125e also exemplify copper, silver, aluminum, gold, and the like for the same form.

Further, in order to obtain a uniform film thickness distribution on the entire substrate 106 provided on each side of the carousel 103, the position or gas pressure distribution in which the process gas is supplied from the sputter gas cylinder 111 into the vacuum chamber 101 is manipulated. Alternatively, the shape of the target 107 may be devised or a film thickness correction plate may be used in combination.

In addition, when there is one power supply 112 for one ITO cathode 104a, it is variable on the other end side of the ITO cathode 104a for installing the power supply 112 at one end of the ITO cathode 104a. A ground circuit connected with a capacitor may be provided. Thereby, the power equivalent to the sputter power returned to the power supply 112 side through the opening of the cathode case provided with the power supply 112 is grounded through the grounding circuit, and the distribution of the sputter power supplied to the entire ITO cathode 104a is provided. It is possible to equalize.

Moreover, although the above embodiment targets the ITO cathode 104a, the present invention can also be applied to the SiO ₂ cathodes 105a and 105b.

(Example)

Hereinafter, the Example of this embodiment is described concretely.

Four substrates 106 are arranged in series in the rotational direction and vertical direction (up-down direction) of the carousel 103 of FIG. 11, and two power supply units 112 of each cathode case 126 as shown in FIG. Install on the opposite side with center in between. The test piece which formed the ITO film | membrane on the board | substrate 106 by supplying sputter | spatter electric power to the ITO cathode 104a is made.

[ITO film formation conditions]

1.Target thickness: 180 nm, target resistance: 10 Ω

2. Target Size: Width 127 mm, Length 1625 mm

3. Process gas: Ar 600 cm 3 / min (300 cm 3 / min x 2 systems)

O ₂ 2 cm 3 / min (1 cm 3 / min x 2 systems)

4. Vacuum chamber pressure: 0.29 Pa (2.2 x 10 ^-3 Torr)

5. Substrate temperature: 200 ℃

6. Sputter method: DC / RF superposition method (DC 1.5 kW, RF 3.0 kW)

7. Number of power devices used: 2

8. Film formation time: Example about 25 minutes

9. Substrate: 0.7 x 300 x 400 ㎣ With color filter and resin protective film

As shown in FIG. 17, the 300 mm side of the substrate 106 is used as the longitudinal type, and the four pieces are installed in the carousel 103 so as to be arranged in series in the longitudinal direction of the target 103, and as the measurement point of the ITO film characteristics. Each board 106 is numbered in the direction corresponding to the longitudinal direction of the target 107, numbered from 1 to 12 from above, and its ITO film thickness (nm), surface resistance (Ω) and Resistivity ( Three characteristic values of .cm) are measured. In addition, the distribution (deviation) of each measured characteristic value is represented by the ratio (%) which attached the symbol of + to (maximum value-minimum value) / (2 x average value).

As a comparative example, the substrate (by supplying only the sputtering power from one power supply 113 in the two power supply 112 in FIG. 13 to the ITO cathodes 104a and 104b for about 50 minutes) 106) A test piece for forming an ITO film is made (Comparative Examples 1 and 2).

Below, as a comparative example 1, the result when sputter | spatter electric power is supplied to ITO cathode 104a only in the upper power supply device 112 is shown.

Measuring point ITO film thickness (nm) Surface resistance (Ω) Resistivity ( Cm) One 176 10.40 183 2 180 10.30 186 3 182 10.20 186 4 180 9.94 179 5 182 10.30 187 6 186 10.10 187 7 193 9.84 190 8 198 9.35 185 9 198 9.00 178 10 196 9.31 182 11 203 8.80 179 12 203 8.70 177 Maximum value 203 10.40 190 Minimum 176 8.70 177 Average 190 9.68 183 Distribution(%) ± 7.1 ± 8.8 ± 3.6

As clearly shown in Table 5, in Comparative Example 1, it is confirmed that the ITO film thickness of the range of the small number of measuring points becomes small and the distribution becomes large by ± 7.1%. It is confirmed that the ratio becomes large and the distribution becomes large as ± 8.8%. However, it is confirmed that the position of the power supply 112 has no significant effect on the specific resistance, its distribution remains at ± 3.6%, and the surface resistance depends only on the film thickness.

Next, as a comparative example 2, the result when sputter | spatter electric power is supplied to the ITO cathode 104 only in the lower power supply device 112 is shown.

Measuring point ITO film thickness (nm) Surface resistance (Ω) Resistivity ( Cm) One 199 9.21 183 2 199 9.35 186 3 196 9.36 183 4 198 9.45 187 5 190 9.72 185 6 175 10.20 178 7 179 10.00 179 8 173 10.20 177 9 180 10.10 182 10 175 10.20 179 11 172 10.60 183 12 163 11.30 185 Maximum value 199 11.30 187 Minimum 163 9.21 177 Average 184 9.97 182 Distribution(%) ± 9.8 ± 10.5 ± 2.7

As is apparent from Table 6, in Comparative Example 2, it is confirmed that the ITO film thickness of the range where the number of measuring points is large becomes small and the distribution becomes large by ± 9.8%. It is confirmed that the case becomes large and the distribution becomes large as ± 10.5%. However, as in Comparative Example 1, it is confirmed that the position of the power supply 112 does not have a large influence on the specific resistance, and its distribution remains at ± 2.7%.

For these, the result when the sputtering power by the film forming conditions of the embodiment is supplied to the ITO cathode 104a is shown.

Measuring point ITO film thickness (nm) Surface resistance (Ω) Resistivity ( Cm) One 185 9.99 185 2 191 9.99 190 3 187 9.81 184 4 185 9.76 180 5 186 9.99 186 6 186 10.30 192 7 178 10.40 185 8 182 10.00 182 9 186 9.99 186 10 178 10.00 178 11 185 10.00 185 12 180 10.60 191 Maximum value 191 10.60 192 Minimum 178 9.76 178 Average 184 10.07 185 Distribution(%) ± 3.5 ± 4.2 ± 3.8

As clearly shown in Table 7, in the examples, the respective characteristic values of the ITO film thickness, the surface resistance and the specific resistance are not influenced by the measuring point, and the distributions are sequentially in the range of ± 3.5%, ± 4.2% and ± 3.8% Each characteristic value is stabilized within a distribution range, and it is possible to make the film thickness and film quality of the ITO film | membrane formed in all the board | substrate 106 provided in the carousel 103 uniformly.

According to the sputtering apparatus according to the present invention according to the above detailed description, the manifold has a symmetrical form on each of the mutually perpendicular central axes in the plane of the target, is arranged to surround the entire circumference of the target, and also emits a process gas. Since the gas outlet is distributed throughout the manifold, it is possible to supply the process gas without splicing the influence of the gaseous components emitted from the organic material coated on the surface of the substrate when sputtering the target, and thus the film thickness of the front surface of the substrate. And it is possible to form a film of uniform film quality.

In addition, since the manifold is divided into two or more, it is possible to shorten each manifold to prevent a decrease in the supply amount and pressure of the process gas due to the length of the manifold.

Moreover, since the process gas supply means has two or more process gas supply sources, and the manifold divided into two or more is connected to the process gas supply source, it is possible to individually control and manage the supply amount and pressure of the process gas.

In addition, since the process gas outlet consists of a plurality of holes or slots, it is possible to easily disperse and arrange the process gas outlet over the entire surface of the target.

In addition, since a plurality of process gas passage holes provided in the plasma shield plate shielding the plasma during sputtering from the cathode and the manifold rectify the process gas discharged from the process gas discharge port toward the target, the plasma during sputtering It is possible to maintain the shielding effect from the manifold and to evenly distribute the process gas over the target surface.

Moreover, since each of the process gas passage holes is made of a semicircular cut-out hole, a sufficient rectification effect can be obtained by simple processing.

In addition, since a plurality of power supply devices supply sputter power to cathodes provided at different positions in a direction perpendicular to the direction of movement of the substrate, it is possible to equalize the density of the plasma formed near the target over the entire surface of the target and thus It is possible to form a uniform thin film of the same film thickness over the entire substrate.

Further, the positions of the plurality of power supply units are such that the film thickness distribution of the thin film on the substrate based on one power supply position is based on the other power supply position adjacent to one of the power supply positions. It is possible to form a more uniform thin film of the same film thickness over the entire surface of the substrate since it is determined to compensate for the difference.

In addition, since the power supply device is configured to supply sputter power to the cathode through a conductor that is in surface contact with the substrate in a direction perpendicular to the moving direction of the substrate, the sputter power propagates isotropically around the target and thus the plasma formed near the target. It is possible to reliably spatially uniform the density.

Moreover, since a plurality of cathodes are arranged along the moving direction of the substrate, it is possible to maintain a stable state of glow discharge and to improve a thin film formation rate.

Claims (10)

At least one cathode configured to be provided with a vacuum chamber and a plate-shaped target disposed in the vacuum chamber and opposed to a substrate coated with an organic material on a surface thereof, and process gas supply means for supplying a process gas to the cathode, The process gas supply means has a form symmetrical to each of the central axes orthogonal to each other in the plane of the target and is arranged to surround the entire circumference of the target and the entire manifold to discharge the process gas to the target. A sputtering apparatus, characterized in that it comprises a process gas discharge port disposed dispersed in the. The sputtering apparatus according to claim 1, wherein the mani folder is divided into two or more. 3. The sputtering apparatus according to claim 2, wherein the process gas supply means has two or more process gas sources and the two or more divided manifolds are connected to the process gas supply, respectively. A sputtering apparatus according to any one of claims 1 to 3, wherein said process gas outlet consists of a plurality of holes or slots. The plasma shield plate according to any one of claims 1 to 4, further comprising a plasma shield plate arranged to surround the entire circumference of the target and shielding the plasma during sputtering from the cathode and the manifold, wherein the plasma shield plate And a plurality of process gas passages arranged to rectify the process gas discharged from the process gas outlet toward the target and to be dispersed and installed throughout the plasma shield plate. 6. The sputtering apparatus according to claim 5, wherein each of said process gas passage holes is made of a semicircular cut-out hole. At least one cathode disposed in the vacuum chamber and the vacuum chamber and provided with a target and moving means for opposing the target in the vacuum chamber and moving at least one substrate in a predetermined direction, and connected to the cathode and further comprising direct current power and high frequency power. And a plurality of power supply devices for supplying the cathode as sputter power that superimposes the plurality of power supplies, and the plurality of power supply devices supply the sputter power to the cathode at different positions in relation to a direction perpendicular to the predetermined direction. The sputtering apparatus which forms the electroconductive thin film | membrane by the magnetron sputtering method of DC / RF superimposition system on the said board | substrate characterized by the above-mentioned. 8. The method of claim 7, wherein the positions of the plurality of power supply units are based on one of the power supply positions and the film thickness distribution of the thin film on the substrate is based on the other of the power supply positions adjacent to one of the power supply positions. Sputtering apparatus, characterized in that it is determined to complement the film thickness distribution of the thin film on the substrate. 9. A method according to claim 7 or 8, characterized in that the cathode has a conductor in surface contact in a direction perpendicular to the predetermined direction and the power supply is configured to supply the sputter power to the cathode through the conductor. Sputtering apparatus made. 10. The apparatus according to any one of claims 7 to 9, wherein at least two cathodes are disposed along the predetermined direction, one of the power supply units is connected to one of the cathodes, and the other of the power supply units is Sputtering apparatus, characterized in that connected to the other of the cathode.