CN1455826A

CN1455826A - Sputtering device

Info

Publication number: CN1455826A
Application number: CN02800199A
Authority: CN
Inventors: 迫博明
Original assignee: Nippon Sheet Glass Co Ltd
Current assignee: Nippon Sheet Glass Co Ltd
Priority date: 2001-01-29
Filing date: 2002-01-29
Publication date: 2003-11-12
Also published as: KR20030013379A; TW562869B; WO2002061166A1

Abstract

A sputtering apparatus 1 sputters a target 8 with ions in a plasma using a magnetron sputtering method, to form an ITO film from the target 8 on glass substrates 5 mounted on a rotating carousel 4. Manifolds 9 and 10, which have a shape that is symmetrical about each of two mutually orthogonal central axes in the plane of the target 8, are disposed so as to surround the whole periphery of the target 8, and process gas discharge ports 9a and 10a for discharging a process gas onto the target 8 are provided in a manner being distributed over the whole of the manifolds 9 and 10.

Description

Sputtering equipment

Technical field

The present invention relates to a kind of sputtering equipment, relate in particular to the sputtering equipment that a kind of manufacturing is used for substrate liquid crystal display, that have transparent electrically-conductive film.

Background technology

The substrate with transparent conductive film that is used for chromatic liquid crystal display equipment is usually by applying the colour filter of being made by organic resin (organism) on glass substrate; on described colour filter, apply also the protective film of making by organic resin then and form color filter substrate, on described color filter substrate, be formed uniformly transparent conductive electrode (transparent electrically-conductive film) then and make.Like this, the transparent conductive film that forms on described color filter substrate utilizes the wet corrosion method to form required wire structures usually.Usually, be doped with the Indium sesquioxide (being called " Indium sesquioxide-Xi (ITO) " hereinafter) of stannic oxide as the material that forms described transparent conductive film.

Along with the field expansion of using chromatic liquid crystal display equipment and the lifting remarkably of chromatic liquid crystal display equipment performance, when on color filter substrate, forming ito thin film, must pay special attention to that formed ito thin film has homogeneous thickness and quality on the whole surface of large-area substrates.For example, must be in the discharge of the enterprising line stabilization in the whole surface of big area target, thus produce uniform plasma body, and eliminate from being coated in the influence of the gaseous fraction that the lip-deep organic resin of color filter substrate gives off.

Magnetron sputtering is the method for the formation ito thin film of widespread use.Magnetron sputtering is suitable for forming film on large-area color filter substrate, and its advantage is to produce by forming film under lower temperature, can reducing from the organic gaseous fraction that is coated on the described substrate.

In magnetron sputtering, technology as for control sputter procedure ionic medium state, now proposed to concentrate on the technology on the method for introducing process gas, described process gas has vital role and considerable influence to film thickness and the quality that forms on color filter substrate.

For example, proposed a kind of sputtering equipment in Japanese patent gazette (disclosing) No.05-148627, wherein process gas importing port is positioned near the negative electrode.According to this equipment, because the position relation that process gas imports between port and the negative electrode is fixing, thus do not need to consider that process gas imports the position relation between port and the negative electrode, and after safeguarding or checking, do not need to regulate the position that process gas imports port.

And, a kind of sputtering equipment that is used for forming metallic coating on semiconductor substrate is disclosed in Japanese patent gazette (disclosing) No.05-243155, wherein process gas is sent into from the periphery of circular substrate and the periphery of circular target equally, and is provided with the device that is used to discharge the process gas of being sent into.According to this equipment, process gas is evenly distributed on target and the substrate, so the performance of coating can be more even, and can reduce impurity.

Yet in above-mentioned existing sputtering equipment, under the former situation, the position that imports process gas only is fixed near the negative electrode, therefore is difficult to realize on the whole surface of big area target uniform gas distribution.

And, in the latter case, the diameter of substrate and target about at the most 150 is to 200mm, can more easily on this area, send into process gas equably though therefore it is believed that it, but people understand under large-area substrate situation, from the peripheral part of substrate until the distribution of the centre portions process gas of substrate is uneven.And, under the situation of a kind of equipment in back, there not be the influence of the gaseous fraction that from be coated in the lip-deep organism of color filter substrate, gives off of consideration.

In addition,, on large-area color filter substrate, form ito thin film usually, be cut to desired size then in order to reduce the manufacturing cost of ito thin film.Because colour filter and variation film are made by organic resin, so be used for the sputter of ito thin film under the thermal resistance temperature of these organic resins.Therefore the method that is used to form ito thin film is any of the aforesaid various magnetron sputtering methods that can form ito thin film at a lower temperature.In the magnetron sputtering process, anticathode applies the sputter electric energy and produce plasma body by glow discharge in the process gas atmosphere in vacuum chamber, by the plasma sputtering target, thereby forms ito thin film on substrate.

In various types of magnetron sputterings, use direct current (DC) electric energy stack very high frequency(VHF) (VHF) or radio frequency (RF) electric energy DC/RF superimposed type magnetron sputtering as the sputter electric energy, even under lower temperature, more can form the ito thin film of low-resistivity than the DC type magnetron sputtering that only uses the DC electric energy.Its reason is to compare with DC type magnetron sputtering, and under the situation of DC/RF superimposed type magnetron sputtering, described sputter electric energy can be less, has therefore reduced the damage that ito thin film is produced by the high energy Ar ion (process gas) in the plasma body.Therefore determine the mobility (carrier passes the easy degree of the motion of matter such as electronics or hole) of ito thin film electroconductibility to increase, and the resistivity of ito thin film reduce (for example referring to Japanese patent gazette (disclosing) No.10-265926).And under the situation of DC/RF superimposed type magnetron sputtering, known a kind of method is by making glow discharge keep the stable plasma body that makes to keep steady state (for example referring to Japanese patent gazette (disclosing) No.2000-034564).

Figure 18 is the figure that is used to explain existing DC/RF superimposed type magnetron sputtering apparatus.

As shown in figure 18, existing DC/RF superimposed type magnetron sputtering apparatus has the inner housing 202 that forms a vacuum chamber 201, and the ITO negative electrode that is connected in housing 202 sidepieces through the isolator (not shown).Big area target 205 is connected in the internal surface of ITO negative electrode through backing plate 204.The glass substrate (not shown) that carries out sputter thereon is positioned at vacuum chamber 201 in the mode in the face of target 205.

ITO negative electrode 203 has on one side of its rear surface and forms recessed portion, and the magnet 206 that is used for sputter is positioned at this recessed portion.The angle of the intensity of collateral security ITO negative electrode 203 is set out, and the side members that forms ITO negative electrode 203 recessed portions is made by stainless steel plate usually, and the outer opening of its rear surface one side direction.The cathode shell 209 of ITO negative electrode 203 supported supply units 208 covers.

The supply unit 208 that is supported by cathode shell 209 has the circuit structure (not shown) that is made of radio frequency (RF) power supply, matching box and direct current (DC) power supply, wherein radio-frequency power supply and matching box are connected mutually, and direct supply and radio frequency (RF) power supply and matching box and connecting.Matching box has the circuit that mainly is made of high capacity capacitor.

Supply unit 208 superposes DC electric energy and RF electric energy, and the synthetic electric energy is fed to ITO negative electrode 203 as the sputter electric energy.Be connected near the some contact part 212 the side members end face center of ITO negative electrode through the flexible metal band 211 that copper etc. is made from the RF electric energy output 210 of the matching box of supply unit 208.In parallel from the output 213 of the DC electric energy of supply unit 208 with the RF electric energy, and be connected near the side members end face center of ITO negative electrode some contact part 215 through concentric cable 214.As a result, the sputter electric energy of supply unit 208 supplies isotropically propagates into target 205 peripheries.

Yet, in existing DC/RF superimposed type magnetron sputtering apparatus shown in Figure 180, the sputter electric energy point contact component 212 and 215 between flexible metal band 211 and concentric cable 214 and ITO negative electrode respectively is fed to ITO negative electrode 203, and these contact components are made by the metal of different type.Therefore contact resistance changes easily, and in this case, therefore the impedance variations of ITO negative electrode generally can not remain on steady state with glow discharge in the past along with the time.As a result, abnormal discharge or uneven plasma body take place easily.Because this variation of impedance, it is stronger than DC electric energy component that RF electric energy component influences the generation of plasma body.

And in the position corresponding to the supply unit 208 that is supported by cathode shell 209, the ito thin film thickness on the substrate is less than the ito thin film thickness of other positions on the substrate, so the thickness of ito thin film becomes inhomogeneous.This is to leak in the matching box because of the opening of radio-frequency component part on cathode shell 209 in the sputter electric energy that is fed to ITO negative electrode 203, therefore no longer supply equably on the whole surface of ITO negative electrode 203 of electric energy, the high frequency noise that perhaps produces in matching box is interfered with the RF electric energy that is fed to ITO negative electrode 203, and therefore plasma density diminishes in the position corresponding to a contact component 212.

Summary of the invention

First purpose of the present invention provides a kind of sputtering equipment, this equipment can be supplied process gas equably on the whole surface of target, eliminated simultaneously from being coated in the influence of the lip-deep organism expellant gas of color filter substrate component, therefore can on the whole surface of substrate, form the coating of uniform thickness and quality.

Second purpose of the present invention provides a kind of sputtering equipment, and this equipment can form the coating of uniform thickness and quality on the whole surface of substrate.

In order to realize first purpose of the present invention, a kind of sputtering equipment is provided, this equipment comprises: vacuum chamber; Be positioned at least one negative electrode of described vacuum chamber, and connect a plate shape target in the face of at least one substrate on this negative electrode, this substrate has and is coated in its surperficial organism; Be used for process gas is fed near the target process gas feeding mechanism; Wherein said process gas feeding mechanism comprises a collector (manifold), this collector has the symmetric shape of central axis about two mutually orthogonals in the target plane, and whole periphery around described target, and be distributed in the process gas discharge port on the whole described collector, be used for process gas is discharged into target.

According to said structure, described collector has the symmetric shape of central axis about two mutually orthogonals in the target plane, and center on the whole periphery of described target, and be provided with the process gas discharge port of discharging process gas in the mode that on whole collector, distributes.The result, when sputtering target, can be fed to process gas on the whole surface of target equably from the process gas discharge port, eliminate simultaneously from being coated in the influence of the lip-deep organism expellant gas of color filter substrate component, therefore can on the whole surface of substrate, form the coating of uniform thickness and quality.

Preferably, above-mentioned collector is divided at least two collector parts.

According to said structure, described collector is divided at least two collector parts.As a result, each collector part can be shorter, therefore can prevent to cause owing to collector is long the reduction of process gas fill rat and pressure.

And preferably, above-mentioned process gas feeding mechanism has at least two process gas sources of supply, and described at least two collectors partly are connected to one of described process gas source of supply.

According to said structure, each collector partly is connected to one of described process gas source of supply.As a result, can control the fill rat and the pressure of the process gas of each collector part respectively.

And preferably, described process gas discharge port comprises a plurality of holes or otch.

According to said structure, described process gas discharge port comprises a plurality of holes or otch.As a result, described process gas discharge port can easily be distributed in around the whole surface of target.

And preferably, described sputtering equipment has the plasma shield plate, this plate is around the whole periphery of described target, and in sputter procedure, make negative electrode and collector be shielded from plasma body, wherein each plasma shield plate has a plurality of process gas through holes that are provided with in the mode that is distributed on the whole plasma shield plate, thereby the process gas that adjusting is discharged from the process gas discharge port towards target is mobile.

According to said structure, be located at a plurality of process gas through holes on the plasma shield plate that makes negative electrode and collector be shielded from plasma body in the sputter procedure and regulate flowing of the process gas of discharging from the process gas discharge port towards target.As a result, process gas can evenly be fed on the whole surface of target, keeps negative electrode and collector to be shielded from the effect of plasma body simultaneously in sputter procedure.

And preferably, each process gas through hole comprises the hole that cuts out of a semicircle.

According to said structure, each process gas through hole comprises the hole that cuts out of a semicircle.As a result, can adopt simple processing to obtain enough flow adjustment effects.

In order to realize second purpose of the present invention, a kind of sputtering equipment is provided, this sputtering equipment forms conductive film by DC/RF superimposed type magnetron sputtering method at least one substrate, and this equipment comprises: vacuum chamber; The negative electrode that at least one is positioned at described vacuum chamber and has target mounted thereto; Be used in vacuum chamber, moving at least one substrate and make the running gear of described at least one real estate simultaneously target along predetermined direction; A plurality ofly be connected in described at least one negative electrode and direct current energy and the synergetic sputter electric energy of radio-frequency electrical energy are fed to supply unit on described at least one negative electrode; Wherein said a plurality of supply unit is supplied sputter electric energy in mutually different position on the direction perpendicular to described pre-determined direction to described at least one negative electrode.

According to said structure, described a plurality of supply units are supplied sputter electric energy in mutually different position on the direction perpendicular to described pre-determined direction to described at least one negative electrode.As a result, near the plasma density that forms the target can the whole surface at target, evenly, therefore can on the whole surface of substrate, form the film of uniform thickness and quality.

Preferably, the position of a plurality of supply units is definite like this, promptly distribute based on the film thickness on described at least one substrate of a supply unit position, compensation distributes based on the film thickness on described at least one substrate of a described adjacent supply unit position.

According to said structure, the position of described a plurality of supply units is definite like this, promptly distribute based on the film thickness on described at least one substrate of a supply unit position, compensation is based on the thickness distribution of the film on described at least one substrate of a described adjacent supply unit position.As a result, can on whole base plate, form thickness and the more uniform film of quality.

And preferably, described supply unit is supplied sputter electric energy through the conductor of face contact to described at least one negative electrode along the direction perpendicular to described pre-determined direction.

According to said structure, described supply unit is arranged like this, promptly supplies sputter electric energy through the conductor of face contact to described at least one negative electrode along the direction perpendicular to the substrate motion direction.As a result, the sputter electric energy isotropically propagates into the target periphery, and therefore near the density of the plasma body that forms target can keep the space even reliably.

And preferably, arrange at least two negative electrodes along described pre-determined direction, one of wherein said supply unit is connected in one of negative electrode, and another supply unit is connected in another negative electrode.

According to said structure, arrange at least two negative electrodes along described pre-determined direction.As a result, can improve the rate of formation of film, make glow discharge state keep stable simultaneously.

Description of drawings

Fig. 1 is the local excision's orthographic plan according to the sputtering equipment main part of the first embodiment of the present invention;

Fig. 2 is the horizontal cross that is shown specifically a part among Fig. 1;

Fig. 3 is the view of seeing along the direction A among Fig. 2;

Fig. 4 is the view that is illustrated in collector 9 profiles that occur among Fig. 3;

Fig. 5 A and 5B are the views that is used for the plasma shield plate 11 of key drawing 2 appearance, wherein:

Fig. 5 A is the skeleton view of plasma shield plate 11;

Fig. 5 B is the sectional view of the plasma shield plate 11 done of the line B-B along Fig. 5 A;

Fig. 6 A and 6B illustrate the figure of process gas composition variation to the influence of visible absorption coefficient and sputtering raste (film forming thickness in the unit time), wherein:

Fig. 6 A shows O ₂Relation between inlet and the visible absorption coefficient;

Fig. 6 B shows O ₂Relation between inlet and the sputtering raste;

Fig. 7 is the synoptic diagram that ito thin film performance measurement point in example and the comparative example 1 to 3 is shown;

Fig. 8 is the layout synoptic diagram that process gas feeding mechanism and target 8 in the comparative example 1 are shown;

Fig. 9 is the layout synoptic diagram that process gas feeding mechanism and target 8 in the comparative example 3 are shown;

Figure 10 is the layout synoptic diagram that process gas feeding mechanism and target in the existing sputtering equipment are shown;

Figure 11 is the local excision's orthographic plan according to the sputtering equipment main part of second embodiment of the invention;

Figure 12 is the figure that the structure of the sputtering equipment 100 that occurs among Figure 11 is shown;

Figure 13 is local excision's longitudinal sectional view of the ITO negative electrode 104a that occurs among Figure 11;

Figure 14 is the end view of the ITO negative electrode recessed portion opening that occurs among Figure 13;

Figure 15 is local excision's transverse sectional view of the ITO negative electrode 104a that occurs among Figure 11;

Figure 16 is the view that is used for explaining the cathode surface of ITO negative electrode 104a that Figure 11 occurs and 104b;

Figure 17 is the synoptic diagram that ito thin film performance measurement point is shown;

Figure 18 is the view that is used to explain existing DC/RF superimposed type magnetron sputtering apparatus.

Embodiment

Now with reference to accompanying drawing embodiments of the invention are described.

(first embodiment)

Fig. 1 is the local excision's orthographic plan according to the sputtering equipment main part of the first embodiment of the present invention.

In Fig. 1, sputtering equipment 1 comprises the inner housing 3 that forms a vacuum chamber 2, be arranged in the 12 prismatic rotating-disks (substrate fixer) 4 that rotate along direction shown in Fig. 1 arrow by the motor (not shown) at housing 3 centers, a pair of be positioned at described housing 3 perimeter sides to part as the ITO negative electrode 6 of sputter cathode, and the relative SiO of a pair of and ITO negative electrode 6 ₂ Negative electrode 7.

A plurality of substrates 5, for example four substrates 5 vertically are arranged in a row on each side of rotating-disk 4.Each substrate 5 is that vertical dimension is 300 to 500mm, and lateral dimension is 400 to 600mm rectangle color filter substrate, wherein is coated on the glass baseplate surface by the colour filter that organic resin forms.By on described disk 4 each side, vertically arranging a plurality of substrates 5, can increase the total area of substrate 5, therefore can improve manufacturing efficient.Vertical dimension is 800 to 1800mm, lateral dimension is that 100 to 200mm rectangle target 8 is connected on the part of each ITO negative electrode 6 of vacuum chamber 2.Each target 8 is made by sintered compact, wherein mixes the Indium sesquioxide and the stannic oxide of predetermined proportion, is used for forming on substrate 5 ito thin film (transparent electrically-conductive film).

Sputtering equipment 1 utilizes magnetron sputtering method by the ion sputtering target 8 in the plasma body, and forms ito thin film and SiO from target 8 on the substrate 5 that is installed on the rotating-disk 4 ₂Film, thus substrate made with transparent conductive film.Particularly, sputtering equipment 1 is with the predetermined continuous rotary disk 4 of rotating speed (per minute 2 to 4 changes), and passes through when being connected in target 8 fronts of each ITO negative electrode 6 when each substrate 5, and the starting material particle deposition that flies out from target 8 is on substrate 5, form ito thin film, up to predetermined film thickness.Utilize SiO then ₂ Negative electrode 7 forms SiO similarly on the surface of ito thin film ₂Film is up to predetermined film thickness.Should be pointed out that and form ito thin film and SiO ₂The order of film can be put upside down.

In this embodiment, as mentioned above, use magnetron sputtering method sputtering target 8, thereby on each substrate 5, form ito thin film.Organism is coated under the situation that forms ito thin film on the substrate 5 on the glass baseplate surface such as colour filter therein, and substrate temperature must be no more than 250 ℃ in magnetron sputtering method usually.Yet if utilize magnetron sputtering method to form ito thin film under this temperature, resistivity may be 200 μ Ω cm or bigger so, and ito thin film will not have enough performances as the chromatic liquid crystal display equipment electrode in this case.

In the magnetron sputtering process, extensively adopt DC/RF superimposed type magnetron sputtering method, wherein be that ITO negative electrode 6 radiofrequency suppliers (RF) electric energy is superimposed upon the electric energy on direct current (DC) electric energy, even thereby, also can form ito thin film with the low-resistivity that is no more than 200 μ Ω cm being no more than under 250 ℃ the low substrate temperature.

Yet, in DC/RF superimposed type magnetron sputtering method, compare with the glow discharge that the DC power supply produces, be superimposed upon the glow discharge that the DC/RF superimposed type power supply of the electric energy on the DC electric energy produces by supply RF electric energy, have the feature of the stable discharging state that more is hard to keep.

Therefore, in DC/RF superimposed type magnetron sputtering method, be difficult to be created in uniform plasma body on the room and time by the glow discharge of DC/RF stack power supply, so guarantee the homogeneity particularly important of process gas, it directly influences the state of plasma body.And the stability of plasma body and the stability of glow discharge are whole, interactive each other, if therefore plasma body keeps steady state, glow discharge also will remain on steady state so.As a result, can reduce because flying out of causing of paradoxical discharge and cause the low situation of quality product attached to the abnormal grain on the substrate 5 from target 8 surfaces.

Fig. 2 is the horizontal cross that is shown specifically the part of Fig. 1, and Fig. 3 is the view that direction A sees from Fig. 2.

In Fig. 2, target 8 is connected on the part of the ITO negative electrode 6 of vacuum chamber 2.Be provided with DC/RF stack power supply (not shown) on the side of the back of target 8, this power supply is superimposed upon electric energy on the DC electric energy to target 8 and magnetic field device 12 supply RF electric energy, so that realize the sputter of target 8 effectively.In sputtering equipment 1 because the rotation of disk 4, when substrate 5 through towards the position of target 8 time, on each substrate 5, carry out sputter.

Each substrate 5 has the surface that is coated with the colour filter that organism makes, therefore when substrate 5 heating or when on substrate 5 surfaces, forming basement membrane that silicon-dioxide constitutes or transparent electrically-conductive film, discharge the characteristic gas that forms by volatile component in substrate 5 surperficial upward adsorption components and the colour filter by sputter.This characteristic gas can be by general formula CO _x(0＜X≤2) are represented, therefore this gas will be called CO hereinafter _x, not only comprise CO and CO ₂, and comprise gas with unsettled stoichiometry state.If CO _xEnter vacuum chamber 2, it can react and consume oxygen composition in the process gas so, perhaps may reduce and react and increase oxygen composition in the process gas.As a result, the performance of plasma body will produce fluctuation, therefore may damage film forming homogeneity.And, if this film be oxide compound such as ITO, the oxygen composition in the process gas will directly influence the performance of described film so.

The experimental result of the influence that is produced owing to the fluctuation of the oxygen component content in the process gas when forming ito thin film on substrate 5 has been shown in Fig. 6 A and 6B.Fig. 6 A and 6B show when comprising Ar and O ₂The O of process gas ₂Inlet changes, and the Ar inlet keeps constant 300cm ³During/min (under 20 ℃ and 1 atmospheric standard conditions), the measuring result of visible absorption coefficient and sputtering raste (film thickness that forms in the unit time).As can be seen, the visible absorption coefficient of ito thin film and sputtering raste are along with O ₂Inlet changes and changes.

In Fig. 2 and Fig. 3, a pair of being used for arranges the collector (tracheae) 9 and 10 that process gas is fed on the target 8 along the neighboring of target 8.Process gas is by rare gas element ratio of components such as Ar, but optionally can add reactive gas such as O ₂And N ₂

Collector

9 and 10 has about the horizontal center line axis of mutually orthogonal on the plane of target 8 and the symmetric shape of vertical centre axis difference, and centers on the whole periphery of described target 8.Particularly, collector 9 is around upper part of target 8, and collector 10 is around lower part of target 8.And

collector

9 and 10 has a plurality of process gas discharge port 9a or 10a respectively, is used for process gas is fed to equably the whole surface of target 8.

The process gas source of supply 13 of supply process gas is connected in collector 9, and the process gas source of supply 14 of supply process gas is connected in collector 10.The process gas fill rat of collector 9 is delivered in 13 controls of process gas source of supply, and the process gas fill rat of collector 10 is delivered in 14 controls of process gas source of supply.As a result, the process gas fill rat that can independent control be fed to

collector

9 and 10.

In this embodiment, the process gas that is fed to the process gas of collector 9 and is fed to collector 10 is of identical composition.Yet, also can supply process gas to

collector

9 and 10 respectively with heterogeneity and/or different pressures.As a result, can change the thickness and the quality of the ito thin film that on substrate 5, forms everywhere.

When supply has the process gas of heterogeneity and/or pressure on the different piece of target 8, in sputter procedure such as in the reactive sputtering, wherein getting the hang of of process gas changes slightly just to film formation performance generation considerable influence, think that it is effective utilizing the variation of monitoring of plasma concentration such as light emission state detector, this detector portion comprises feedback system, and light emission is assembled, wherein this feedback system changes the composition and/or the pressure of the process gas of each part that is used for target 8.

Fig. 4 shows the view of the profile of the collector 9 that occurs among Fig. 3.Collector 9 is only considered in following explanation, but collector 10 has similar structure.

In Fig. 4, collector 9 has two process

gas jet pipe

9b and 9c, and each process

gas jet pipe

9b and 9c have along the spaced apart process gas discharge port 9a of its whole longitudinal direction to equate.

Interval (pitch) between the adjacent production gas discharging port 9a preferably is no more than 50mm.On the size and dimension of process gas discharge port 9a, have no particular limits; Consider the pressure-losses that each process

gas jet pipe

9b and 9c produce in a longitudinal direction, this size and dimension should be set suitably, so that the process gas fill rat on the target 8 is roughly the same for full scale production gas discharging port 9a.

The length L of each process

gas jet pipe

9b and 9c is 800mm preferably.The upper limit of length L is made as 1000mm, and this upper limit is used to suppress owing to the different process gas fill rats that cause of the distance from process gas source of supply 13 to each process gas discharge port 9a and the variation of pressure.According to the size of target 8, the distance W between process gas jet pipe 9b and the 9c is preferably 100 to 200mm.

Near the process gas discharge port 9a of process gas source of supply 13 with preferably be no more than 1000mm away from the distance between the process gas discharge port 9a of process gas source of supply 13.Process gas is being fed under the situation of small area target 8, near the process gas discharge port 9a of process gas source of supply 13 with can reduce away from the distance between the process gas discharge port 9a of process gas source of supply 13, in this case, collector 9 and collector 10 can be integrated into a collector.

If

collector

9 and 10 is not with horizontal center line axis and the symmetric arrangements of vertical centre axis difference with respect to mutually orthogonal on the plane of target 8, perhaps near the process gas discharge port 9a of process gas source of supply 13 with surpass 1000mm away from the distance between the process gas discharge port 9a of process gas source of supply 13, perhaps

collector

9 and 10 around the whole periphery (Fig. 8 to 10) of target 8, is not difficult to process gas is fed on the whole surface of target 8 equably so.

By the supply process gas is divided into as shown in Figure 4 collector 9 and collector 10 to the collector on each target 8, can reduce process gas jet pipe 9b in

collector

9 and 10 and the length of 9c, therefore can reduce because the process gas fill rats that the position difference of process gas discharge port 9a (10a) causes and the difference of pressure.

According to this embodiment, the collector that process gas is fed on each target 8 is divided into two, i.e. collector 9 and collector 10, and collector 9 and collector 10 are connected to process gas source of supply 13 and 14.As a result, can reduce the length L of process

gas jet pipe

9b and 9c (10b and 10c),, the fill rat of process gas and pressure are gone up evenly at whole production

gas spray pipe

9b and 9c (10b and 10c) even target 8 has bigger area.

In Fig. 2, plasma shield plate 11 along the neighboring of target 8 between target 8 and collector 9 and 10.Each plasma shield plate 11 has L shaped section, and forms one and be used for making parts except that target 8 in sputter procedure, i.e. the main body of ITO negative electrode 6 and

collector

9 and 10 are shielded from the negative electrode of plasma body.

For the process gas from

collector

9 and 10 discharges are fed on the target 8 equably, each plasma shielding plate 11 is provided with a plurality of process gas through hole 11a that vertically distribute along plasma shield plate 11.These process gas through holes 11a is in the face of the process gas discharge port 9a and the 10a of collector 9 and 10.As shown in Figure 5, each the process gas through hole 11a that describes below is that a semicircle cuts out the hole.

Fig. 5 A and 5B are the views that is used for the plasma shield plate 11 of key drawing 2 appearance; Particularly, Fig. 5 A is the skeleton view of one of plasma shield plate 11, and Fig. 5 B is the sectional view of one of plasma shield plate 11 of being done along the line B-B that occurs among Fig. 5 A.

In Fig. 5 A, each process gas through hole 11a is by forming towards the bent semicircular part that cuts out of target 8 one lateral bendings with about 45 ° angle.When process gas during by this process gas through hole 11a, the flow direction of process gas is because curved part and part changes.As a result, be agitated from

collector

9 and 10 process gas of discharging, thereby regulate flowing of process gas, and make process gas arrive the surface of target 8 with more uniform fill rat and pressure.

If process gas through hole 11a is simple hole, flow from the process gas of discharging with the isolating positions of target 8 will change according to the position of process gas discharge port 9a (or 10a) so, therefore is difficult to make process gas to arrive on the surface of target 8 with uniform fill rat and pressure.

According to the foregoing description, have

collector

9 and 10 whole peripheries around target 8 about the symmetric shape of central axis of two mutually orthogonals on the plane of target 8, and process gas discharge port 9a and 10a are distributed on

whole collector

9 and 10, are used for process gas is discharged into target 8.As a result, process gas can be fed on the whole surface of target 8 equably, has eliminated simultaneously from being coated in the influence of substrate 5 lip-deep organism expellant gas compositions, therefore can form the coating of uniform thickness and quality on whole base plate 5.

(example)

Concrete example of the present invention will be described now.

The present invention forms ito thin film by utilization as the described sputtering equipment 1 of above-mentioned embodiment and prepares sample on substrate 5.And, the present invention also utilize collector 9 wherein with 10 and the layout of target 8 and sputtering equipment 1 in different sputtering equipments prepare similar sample.Measure the ito thin film thickness and the quality (surface resistivity) that form on the sample then and distribute, be i.e. the ito thin film performance.

Particularly, vertical dimension is that 300mm, lateral dimension are that longitudinal direction (vertical direction) that four substrates 5 of 400mm are parallel to target 8 is installed on the disk 4 in the sputtering equipment 1, and forms ito thin film and prepare sample on each substrate 5.As shown in Figure 7, on the longitudinal direction that is parallel to target 8, the ito thin film performance of 3 measurement point measurement samples promptly amounts to 12 measurement point on each sample.

In this example, for each target 8, be provided with two groups of process gas feeding mechanisms, promptly collector 9 adds process gas source of supply 13 and collector 10 adds process gas source of supply 14, as shown in Figure 3.

Collector

9 and 10 diameter are 5mm, the diameter of process gas discharge port 9a and 10a is 1.5mm, the pitch of process gas discharge port 9a and 10a is 40mm (equate at interval), and near the process gas discharge port 9a of process gas source of supply 13 or 14 or 10a be 800mm away from the process gas discharge port 9a or the distance between the 10a of process gas source of supply 13 or 14.And the diameter that is positioned at the semicircle process gas through hole 11a on the plasma shield plate 11 is 10mm, about 45 ° of the angle that part producing gas turns to owing to semicircle process gas through hole 11a.

For this example and comparative example, the process gas supply condition when making sample is identical with sputtering condition, and is as described below.

[process gas supply condition and sputtering condition]

1. aimed thin film thickness: 180nm, target resistance: 10 Ω

2. target size: width 127mm, length 1625mm

3. process gas: Ar600cm ³/ min (300cm ³/ min * 2 tunnel), O ₂2cm ³/ min (1cm ³/ min * 2 tunnel)

4. thin film deposition chamber pressure: 0.29Pa (2.2 * 10 ^-3Torr)

5. substrate temperature: 200 ℃

6. sputtering method: DC/RF stack power supply (DC 1.5kW, RF 3.0kW)

7. film formation time: about 25 minutes

8. substrate: vertical 300mm * horizontal 400mm * thickness 0.7mm (having colour filter and resin protection film)

The ito thin film performance measurement result who utilizes sputtering equipment 1 to supply the sample of making under condition and the sputtering condition at above-mentioned process gas has been shown in table 1.In table 1, ito thin film thickness (nm), surface resistivity (Ω) and resistivity (μ Ω cm) they are to measure maximum value, minimum value, mean value and the distribution (variation) of calculating these numerical value then on the measurement point on the substrate shown in Figure 751 to 12.Numeric distribution is expressed as " ± (maximum value-minimum value)/(2 * mean value) * 100% " in table 1.

Table 1

Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)
Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)	????1	????181	????9.9	????179
????2	????182	????9.7	????177	????1	????181	????9.9	????179
????2	????182	????9.7	????177	????3	????182	????9.9	????180
????4	????180	????10.3	????185	????3	????182	????9.9	????180
????4	????180	????10.3	????185	????5	????178	????10.0	????178
????6	????176	????10.4	????184	????5	????178	????10.0	????178
????6	????176	????10.4	????184	????7	????172	????10.6	????182
????8	????177	????10.2	????180	????7	????172	????10.6	????182
????8	????177	????10.2	????180	????9	????178	????10.3	????183
????10	????178	????10.1	????179	????9	????178	????10.3	????183
????10	????178	????10.1	????179	????11	????178	????10.1	????179
????12	????174	????10.7	????186	????11	????178	????10.1	????179
????12	????174	????10.7	????186	Maximum value	????182	????10.7	????186
Minimum value	????172	?????9.7	????177	Maximum value	????182	????10.7	????186
Minimum value	????172	?????9.7	????177	Mean value	????178	????10.2	????181
Distribute (%)	????±2.8	????±4.9	????±2.5	Mean value	????178	????10.2	????181

As shown in table 1, the ito thin film thickness distribution is ± 2.8%, surface resistivity is distributed as ± and 4.9%, therefore obtained film thickness and capability and performance in the product tolerable limit.As can be seen, in this example, even use large-area target 8 to carry out sputter, because the process gas feeding mechanism of present embodiment also can form the coating with uniform thickness and quality on the whole large-area substrates surface of being made of a plurality of substrates 5.

(comparative example 1)

With above-mentioned example 1 under same process gas supply condition and the sputtering condition, utilize as shown in Figure 8 (comparative example 1)

collector

9 and 10 only to be arranged in width (left side/right) and go up the process gas feeding mechanism of each target 8 one side and prepare sample.

In comparative example 1, collector 9 and 10 is not arranged on a left side/right of target 8 symmetrically, and process gas only is fed on the target 8 from a side.Other condition is identical with above-mentioned example such as the method for measuring ito thin film.Measuring result is shown in the table 2.Table 2

Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)
Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)	????1	????162	????11.4	????184
????2	????171	????10.6	????181	????1	????162	????11.4	????184
????2	????171	????10.6	????181	????3	????174	????10.2	????178
????4	????179	????10.1	????181	????3	????174	????10.2	????178
????4	????179	????10.1	????181	????5	????172	????10.3	????176
????6	????178	????10.1	????179	????5	????172	????10.3	????176
????6	????178	????10.1	????179	????7	????173	????10.2	????177
????8	????189	????9.7	????184	????7	????173	????10.2	????177
????8	????189	????9.7	????184	????9	????197	????9.5	????186
????10	????195	????9.4	????183	????9	????197	????9.5	????186
????10	????195	????9.4	????183	????11	????198	????9.3	????184
????12	????198	????9.2	????183	????11	????198	????9.3	????184
????12	????198	????9.2	????183	Maximum value	????198	????11.4	????186
Minimum value	????162	????9.2	????176	Maximum value	????198	????11.4	????186
Minimum value	????162	????9.2	????176	Mean value	????182	????10.0	????181
Distribute (%)	????±9.9	????±11.0	????±2.8	Mean value	????182	????10.0	????181

As shown in table 2, the ito thin film thickness distribution that forms on substrate 5 is ± 9.9%, surface resistivity is distributed as ± and 11.0%, so the distribution of these resins is greater than above-mentioned example.In this comparative example 1, think to resemble and on the whole surface of each big area target 8, supply process gas equably the described example, therefore in whole film formation process, can not keep plasma body to be in steady state.

(comparative example 2)

The shape that is positioned at the process gas through hole 11a on the plasma shield plate 11 is different with described example, replaces the simple bore that diameter is 10mm.In addition, under process gas supply condition identical and sputtering condition, prepare sample with above-mentioned example.The method of measuring the ito thin film performance also with above-mentioned example in identical.Measuring result is shown in the table 3.

Table 3

Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)
Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)	????1	????179	????9.8	????176
????2	????184	????9.7	????179	????1	????179	????9.8	????176
????2	????184	????9.7	????179	????3	????184	????10.2	????188
????4	????181	????10.2	????184	????3	????184	????10.2	????188
????4	????181	????10.2	????184	????5	????179	????10.5	????188
????6	????179	????10.7	????191	????5	????179	????10.5	????188
????6	????179	????10.7	????191	????7	????178	????10.9	????193
????8	????179	????11.2	????200	????7	????178	????10.9	????193
????8	????179	????11.2	????200	????9	????181	????11.1	????201
????10	????177	????11.0	????194	????9	????181	????11.1	????201
????10	????177	????11.0	????194	????11	????184	????11.2	????205
????12	????193	????10.9	????210	????11	????184	????11.2	????205
????12	????193	????10.9	????210	Maximum value	????193	????11.2	????210
Minimum value	????177	????9.7	????176	Maximum value	????193	????11.2	????210
Minimum value	????177	????9.7	????176	Mean value	????182	????10.6	????192
Distribute (%)	????±4.4	????±7.1	????±8.8	Mean value	????182	????10.6	????192

As shown in table 3, being distributed as of the ito thin film thickness that on substrate 5, forms ± 4.4%, being distributed as of surface resistivity ± 7.10%, so the distribution of these resins is a bit larger tham above-mentioned example, but be slightly smaller than comparative example 1.These results show that having in the above-described embodiments, the process gas through hole 11a of example shapes has the whole lip-deep effect that process gas is fed to equably big area target 8.

(comparative example 3)

Under the process gas identical supply condition and sputtering condition, utilize wherein the process gas feeding mechanism that one group of collector 9 and process gas source of supply 13 only is set for each target 8 to prepare sample with above-mentioned example.

In comparative example 3, for the process gas discharge port 9a that is positioned on the collector 9, near the position of the process gas discharge port 9a of process gas source of supply 13 be 1600mm, promptly approximate the length that longitudinal direction (vertical direction) is gone up target 8 away from the distance between the position of the process gas discharge port 9a of process gas source of supply 13.

Though a process gas source of supply 13 is only arranged, total process gas fill rat equals above-mentioned example and comparative example 1 and 2, i.e. 600cm ³The Ar of/min, 2cm ³The O of/min ₂Other condition is identical with above-mentioned example such as the method for measuring ito thin film.Measuring result is shown in the table 4.

Table 4

Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)
Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)	????1	????165	????10.1	????167
????2	????175	????10.2	????178	????1	????165	????10.1	????167
????2	????175	????10.2	????178	????3	????176	????10.0	????176
????4	????180	????10.0	????181	????3	????176	????10.0	????176
????4	????180	????10.0	????181	????5	????181	????9.7	????176
????6	????179	????10.2	????183	????5	????181	????9.7	????176
????6	????179	????10.2	????183	????7	????182	????9.8	????179
????8	????192	????9.5	????183	????7	????182	????9.8	????179
????8	????192	????9.5	????183	????9	????193	????9.5	????183
????10	????189	????9.6	????182	????9	????193	????9.5	????183
????10	????189	????9.6	????182	????11	????186	????9.4	????175
????12	????191	????9.9	????190	????11	????186	????9.4	????175
????12	????191	????9.9	????190	Maximum value	????193	????10.2	????190
Minimum value	????165	????9.4	????167	Maximum value	????193	????10.2	????190
Minimum value	????165	????9.4	????167	Mean value	????182	????9.8	????179
Distribute (%)	????±7.7	????±4.1	????±6.3	Mean value	????182	????9.8	????179

As shown in table 4, the ito thin film thickness distribution that forms on substrate 5 is ± 7.7%, surface resistivity is distributed as ± and 4.1%, so above-mentioned example is a bit larger tham in the distribution of these resins.

In this comparative example 3, for the process gas discharge port 9a that is positioned on the collector 9, near the position of the process gas discharge port 9a of process gas source of supply 13 and away from the distance between the position of the process gas discharge port 9a of process gas source of supply 13 greater than 1600mm.Therefore think that the fill rat and the pressure of the process gas of discharging from process gas discharge port 9a change, and therefore can not produce uniform plasma body on the whole surface of each target 8 between process gas discharge port 9a.

(second embodiment)

Figure 11 is local excision's orthographic plan of sputtering equipment main part according to a second embodiment of the present invention.

In Figure 11, sputtering equipment 100 is formed the housing 102 of a vacuum chamber 101 by inside, be arranged in the 12 prismatic rotating-disks (substrate fixer) 103 that rotate along direction shown in Figure 11 arrow by motor (running gear) (not shown) at housing 102 centers, a pair of ITO negative electrode 104a and the 104b that is positioned at described housing 102 perimeter sides to part, and a pair of SiO relative with 104b with ITO negative electrode 104a as sputter cathode ₂Negative electrode 105a and 105b.

A plurality of substrates 106, for example four substrates 106 vertically are arranged in a row on each side of rotating-disk 103.Each substrate 106 is that vertical dimension is 300 to 500mm, and lateral dimension is 400 to 600mm rectangle color filter substrate, and wherein the colour filter that is formed by organic resin (organism) is coated on the glass baseplate surface.By on each side of described disk 103, vertically arranging a plurality of substrates 106, can increase the total area of substrate 106, therefore can improve manufacturing efficient.Vertical dimension is 800 to 1800mm, lateral dimension is that 100 to 200mm rectangle big area target 107 is connected on the part of each the ITO negative electrode 104a of vacuum chamber 101 and 104b.Each target 107 is made by sintered compact, wherein mixes the Indium sesquioxide and the stannic oxide of predetermined proportion, is used for forming on substrate 106 ito thin film (transparent electrically-conductive film).

Sputtering equipment 100 utilizes magnetron sputtering method by the ion sputtering target 106 in the plasma body, and forms ito thin film and SiO from target 107 on the substrate 106 that is installed on the rotating-disk 103 ₂Film, thus substrate made with transparent conductive film.Particularly, sputtering equipment 100 is with the predetermined continuous rotary disk 103 of rotating speed (per minute 2 to 4 changes), and when each substrate 106 process is connected in target 107 fronts of

negative electrode

104a or 104b, the starting material particle deposition that flies out from target 107 is on substrate 106, thereby the formation ito thin film is up to predetermined film thickness.Utilize SiO then ₂

Negative electrode

105a and 105b form SiO similarly on the surface of ito thin film ₂Film is up to predetermined film thickness.Should be pointed out that and form ito thin film and SiO ₂The order of film can be put upside down.

Figure 12 is the figure that the structure of the sputtering equipment 100 that occurs among Figure 11 is shown.Figure 12 only shows those parts that are used for explained later of sputtering equipment 100 in the mode of synoptic diagram.

In sputtering equipment 100, the vacuum chamber 101 in the housing 102 keeps vacuum state by vacuum pump, and process gas enters the vacuum chamber 101 from the sputter gas cylinder simultaneously, and regulates the sputtering atmosphere in the vacuum chamber 101.Process gas is made up of rare gas element, but optionally can add reactive gas such as O ₂Or N ₂

Substrate 106 is positioned at the position of going up target 107 towards ITO negative electrode 104a.In order to produce the plasma body that is used for sputtering target 107 in vacuum chamber 101, supply unit 112 is connected in ITO negative electrode 104a through flexible metal band 113 and concentric cable 117.

Described supply unit 112 has by radio frequency (RF) power supply 114 and connects mutually and be connected in the matching box 115 of flexible metal band 113, and in parallel with described radio frequency (RF) power supply 114 and matching box 115 and be connected in the circuit structure that direct current (DC) power supply 116 of concentric cable 117 constitutes.The result of sort circuit structure is that ITO negative electrode 104a is supplied wherein from radio frequency (RF) electric energy and direct direct current (DC) the electric energy synergetic sputter electric energy (DC/RF stacking method) from DC power supply 116 supplies of RF power supply 114 through matching box 115 supplies.

Matching box 115 has mainly the circuit of being made up of the heavy body electric capacity of the impedance fluctuations influence that is used to offset ITO negative electrode 104a.As a result, can prevent to utilize the DC/RF stacking method and the electric energy that produces supply defective, promptly RF electric energy component is subjected to the defective of the impedance fluctuations influence of ITO negative electrode 104a, and glow discharge is stable, therefore can prevent paradoxical discharge.Therefore can prevent to produce from a large amount of impurity of parts around target 107 and the target 107.

The RF electric energy is fed to ITO negative electrode 104a through flexible metal band 113, and the DC electric energy is fed to ITO negative electrode 104a through concentric cable 117.

The synergetic sputter electric energy of DC electric energy that wherein obtains as mentioned above and RF electric energy is fed to the ITO negative electrode 104a in the vacuum chamber 101 of regulating sputtering atmosphere, thereby produces plasma body.Target 107 is by described plasma sputtering, and forms ito thin film on substrate 106.

The method that flexible metal band 113 is connected in ITO negative electrode 104a is described now.

Figure 13 is local excision's longitudinal sectional view of the ITO negative electrode 104a that occurs among Figure 11, and Figure 14 is the end view of the ITO negative electrode 120 recessed portion openings that occur among Figure 13, and Figure 15 is local excision's transverse sectional view of the ITO negative electrode 104a that occurs among Figure 11.Below description suitably with reference to Figure 11 and 12, Figure 11 with 12 in identical element represent with identical Reference numeral.Following description concentrates on the ITO negative electrode 104a, but should be pointed out that the different of ITO

negative electrode

104a and 104b only are that the installation site of supply unit 112 is different with the link position of flexible metal band 113.

In the following description, needn't narrate the supply of DC electric energy, the parts that therefore relate to the DC electric energy do not illustrate in the accompanying drawing of institute's reference.

Shown in Figure 13 to 15, ITO negative electrode 104a has ITO negative electrode 120, and this negative electrode 120 is connected on the side direction part of the inner housing 102 that forms vacuum chamber 101.Target 107 is installed on the internal surface of ITO negative electrode 120 through backing plate 121.The glass substrate (not shown) that carries out sputter on it is arranged in the vacuum chamber 101 towards target 107.ITO negative electrode 120 has the recessed portion that forms on its trailing flank, a magnet 122 that is used for sputter is positioned at this recessed portion.Below the RF connection conductors of describing 123 is installed in the opening of ITO negative electrode 120 recessed portions.The cathode shell 126 of the recessed portion of described ITO negative electrode 120 and RF connection conductors 123 supported supply units 112 covers.

RF connection conductors 123 is a ladder-shaped, vertical conductor 124a that is made of copper and 124b (thickness 2mm, width 40mm, length 1066mm) and horizontal conductor 125a to 125e constitute, described vertical conductor is fixed on described recessed portion opening both sides, and described horizontal conductor separates with the interval that equates and

vertical conductor

124a and 124b are linked together.

Vertical conductor

124a and 124b contact with 120 on ITO negative electrode along the direction perpendicular to substrate 106 direction of motion, promptly along the longitudinal direction of target 107.

Supply unit 112 is installed in the top (seeing Figure 16) of ITO negative electrode 104a, flexible metal band 113 (thickness 0.2mm, width 40mm) draw from the output terminal of supply unit 112, and the end of flexible metal band 113 is connected in the approximate centre part of horizontal conductor 125c by the bolt (not shown).Under the situation of ITO negative electrode 104, supply unit 112 is installed in the bottom (seeing Figure 16) of ITO negative electrode 104b on the one hand, and as under the situation of ITO negative electrode 104a, flexible metal band 113 is drawn from the output terminal of supply unit 112, and the end of flexible metal band 113 is connected in the approximate centre part of horizontal conductor 125c by the bolt (not shown).

As mentioned above, two supply units 112 that are respectively ITO

negative electrode

104a and 104b supply sputter electric energy can be installed on the mutually different position along the direction perpendicular to substrate 106 direction of motion.The flexible metal band 113 that hope is drawn from each supply unit 112 partly is connected in the center of horizontal conductor 125c in the approximate centre of RF connection conductors 123.The reason of doing like this is the periphery that the RF electric energy that is fed to RF connection conductors 123 centers can isotropically propagate into target 107 through RF connection conductors 123 and the ITO negative electrode 120 that contacts with 123 of described RF connection conductorss.

According to this embodiment, under the situation of ITO negative electrode 104a, supply unit 112 is installed in the top of ITO negative electrode 104a, and be connected in the approximate centre part of horizontal conductor 125c through flexible metal band 113, under the situation of negative electrode 104b, supply unit 112 is installed in the bottom of ITO negative electrode 104b, and is connected in the approximate centre part of horizontal conductor 125c through flexible metal band 113.Like this, the sputter electric energy is fed on the negative electrode 120, and wherein two supply units 112 are positioned at along on the mutually different position of direction perpendicular to substrate 106 direction of motion.As a result, compensated thickness distribution based on the thickness distribution of ito thin film on the substrate 106 of a supply unit position based on ito thin film on the substrate 106 of another supply unit position.Therefore can on whole target 107, become evenly near the plasma density that forms the target 107, and thereby can on whole base plate 106, form ito thin film with uniform thickness and quality.

In the above-described embodiments, three or more ITO negative electrodes 104 can be set.For example, number at set ITO negative electrode 104 is 3 o'clock, supply unit 104 is installed on each ITO negative electrode 104, thereby the installation site of supply unit 112 on ITO negative electrode 104 gone up with equal positioned at intervals in vertical direction (perpendicular to the direction of substrate 106 direction of motion).

Using the ITO negative electrodes 104 described in a plurality of as above-mentioned embodiment is a kind ofly can improve the film rate of formation as the existing installation form of industrial application, and each target 107 is not applied big sputter electric energy, does not promptly cause the unsteady danger of discharging.The present invention has realized this advantage, and has produced bigger effect to forming uniform ito thin film on large-area substrates 106.

In the above-described embodiments, each ITO negative electrode 104 is provided with a supply unit 112, but each ITO negative electrode 104 can be provided with a plurality of supply units 112.In this case, the installation site of the supply unit 112 on the ITO negative electrode 104 is gone up spaced apart with what equate in vertical direction (perpendicular to the direction of substrate 106 direction of motion).

Because flexible metal band 113 is connected in the horizontal conductor 125a to 125e that is made by the metal (being copper) identical with described flexible metal band 113, so can prevent the impedance variations of the ITO negative electrode 120 that the variation owing to contact resistance causes.

And, sputter electric energy through horizontal conductor 125a to 125e supply is fed to ITO negative electrode 120 from

vertical conductor

124a and 124b, wherein vertical conductor is parallel to the longitudinal direction installation of target 107, so the sputter electric energy can isotropically propagate into around the target 107.And vertical conductor 124a contacts with the mutual face of 124b, so the sputter electric energy can carry out each reliably to propagating with one heart.

And, wish that the RF connection conductors 123 on each ITO negative electrode 104 arranges like this, be that the periphery that the periphery of RF connection conductors 123 is parallel to target 107 extends, and the long side of RF connection conductors 123 and short side are respectively along the direction extension identical with the weak point side with the long side of target 107.As a result, the sputter electric energy of supply can more isotropically be propagated around target 107.

Have no particular limits for the size of RF connection conductors 123 and the method for attachment of flexible metal band 113, as long as its details is consistent with purport of the present invention.And common various parts are installed in each ITO negative electrode 104a of supply sputter electric energy and the back of 104b such as water-cooled tube, and RF connection conductors 123 should not interfered the ground layout with these parts with flexible metal band 113 and is connected so.

The method of attachment of the concentric cable 117 of supply DC electric energy can be identical with the method for attachment of flexible metal band 113.

And the material of making the flexible metal band generally is a copper, but can select from the material with satisfactory electrical conductivity and suitable weathering resistance; Outside the copper removal, for example also have silver, aluminium and gold.

For the same reason, the material of making

vertical conductor

124a and 124b and horizontal conductor 125a to 125e can be selected from copper, silver, aluminium and gold etc.

And, distribute in order on all substrates 106 that are installed on disk 103 each side, to obtain uniform film thickness, can handle the position and the gas pressure distribution that enter vacuum chamber 101 from sputter gas cylinder 111 supply process gas, the shape of target 107 can be designed, and/or the film thickness revision board can be used.

And, having under the situation of a supply unit 112 at each ITO negative electrode 104, supply unit 112 can be installed in an end of ITO negative electrode 104, and through variable condenser grounding circuit is installed at the other end of ITO negative electrode 104.The result, turn back to electric energy that the sputter electric energy of supply unit 112 equates through described grounding circuit ground connection with opening through cathode shell 126, supply unit 112 is installed on the wherein said cathode shell, therefore the sputter electric energy that is fed to ITO negative electrode 104 is evenly distributed.

In addition, as target, but the present invention also can be used for SiO to the foregoing description with ITO

negative electrode

104a and 104b ₂

Negative electrode

105a and 105b.

(example)

The concrete example of present embodiment will be described now.

In Figure 11, four substrates 106 are arranged in a row on the direction (vertical direction) perpendicular to disk 103 turning directions, and two supply units 112 are installed in the both sides, center of cathode shell 126, as shown in figure 13.On substrate 106, form ito thin film by supplying the sputter electric energy for ITO negative electrode 104, thus the preparation sample.

[ito thin film formation condition]

1. aimed thin film thickness: 180nm, target resistance: 10 Ω

2. target size: width 127mm, length 1625mm

3. process gas: Ar 600cm ³/ min (300cm ³/ min * 2 tunnel), O ₂2cm ³/ min (1cm ³/ min * 2 tunnel)

4. vacuum chamber pressure: 0.29Pa (2.2 * 10 ^-3Torr)

5. substrate temperature: 200 ℃

6. sputtering method: DC/RF stack power supply (DC 1.5kW, RF 3.0kW)

7. film formation time: about 25 minutes

8. substrate: 0.7mm * 300mm * 400mm has colour filter and resin protection film

As shown in figure 17, four substrates 106 are installed on the disk 103, and are arranged in a row on the longitudinal direction of target 107, and wherein the side of the 300mm of substrate 106 is vertical.3 ito thin film performance measurement points are arranged on each substrate upper edge direction corresponding to target 107 longitudinal directions, and these measurement point are designated as 1 to 12 downwards from the top.Measure three kinds of performance numbers in each measurement point, i.e. ito thin film thickness (nm), surface resistivity (Ω) and resistivity (μ Ω cm).Each distribution (variation) of surveying performance numerical value is expressed as " ± (maximum value-minimum value)/(2 * mean value) * 100% ".

And, for comparative example, by only on substrate 106, forming ito thin film and prepare sample (comparative example 1 and 2) for ITO

negative electrode

104a and 104b supply about 50 minutes sputter electric energy by one of two supply units 112 that occur among Figure 13.

The result of the comparative example 1 that obtains when only supplying the sputter electric energy by last supply unit 112 for ITO negative electrode 104 is shown in the table 5.

Table 5

Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)
Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)	????1	????176	????10.40	????183
????2	????180	????10.30	????186	????1	????176	????10.40	????183
????2	????180	????10.30	????186	????3	????182	????10.20	????186
????4	????180	????9.94	????179	????3	????182	????10.20	????186
????4	????180	????9.94	????179	????5	????182	????10.30	????187
????6	????186	????10.10	????187	????5	????182	????10.30	????187
????6	????186	????10.10	????187	????7	????193	????9.84	????190
????8	????198	????9.35	????185	????7	????193	????9.84	????190
????8	????198	????9.35	????185	????9	????198	????9.00	????178
????10	????196	????9.31	????182	????9	????198	????9.00	????178
????10	????196	????9.31	????182	????11	????203	????8.80	????179
????12	????203	????8.70	????177	????11	????203	????8.80	????179
????12	????203	????8.70	????177	Maximum value	????203	????10.40	????190
Minimum value	????176	????8.70	????177	Maximum value	????203	????10.40	????190
Minimum value	????176	????8.70	????177	Mean value	????190	????9.68	????183
Distribute (%)	????±7.1	????±8.8	????±3.6	Mean value	????190	????9.68	????183

As can be seen from Table 5, in comparative example 1, ito thin film thickness is more little, and the numbering of measurement point is more little, and the ito thin film thickness distribution more greatly ± 7.1%.And surface resistivity is big more, and the measurement point numbering is more little, and surface resistivity distributes more greatly ± 8.8%.Yet the position of supply unit 112 does not have too much influence to resistivity, and resistivity distribution only is ± 3.6%; Therefore find that surface resistivity only depends on film thickness.

When the result of the comparative example 2 that only when down supply unit 112 is for ITO negative electrode 104 supply sputter electric energy, obtains shown in the table 6.

Table 6

Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)
Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)	????1	????199	????9.21	????183
????2	????199	????9.35	????186	????1	????199	????9.21	????183
????2	????199	????9.35	????186	????3	????196	????9.36	????183
????4	????198	????9.45	????187	????3	????196	????9.36	????183
????4	????198	????9.45	????187	????5	????190	????9.72	????185
????6	????175	????10.20	????178	????5	????190	????9.72	????185
????6	????175	????10.20	????178	????7	????179	????10.00	????179
????8	????173	????10.20	????177	????7	????179	????10.00	????179
????8	????173	????10.20	????177	????9	????180	????10.10	????182
????10	????175	????10.20	????179	????9	????180	????10.10	????182
????10	????175	????10.20	????179	????11	????172	????10.60	????183
????12	????163	????11.30	????185	????11	????172	????10.60	????183
????12	????163	????11.30	????185	Maximum value	????199	????11.30	????187
Minimum value	????163	????9.21	????177	Maximum value	????199	????11.30	????187
Minimum value	????163	????9.21	????177	Mean value	????184	????9.97	????182
Distribute (%)	????±9.8	????±10.5	????±2.7	Mean value	????184	????9.97	????182

As can be seen from Table 6, in comparative example 2, ito thin film thickness is more little, and the numbering of measurement point is big more, and the ito thin film thickness distribution more greatly ± 9.8%.And surface resistivity is big more, and the measurement point numbering is big more, and surface resistivity distributes more greatly ± 10.5%.Yet as comparative example 1, the position of supply unit 112 does not have too much influence to resistivity, and resistivity distribution only is ± 2.7%.

With above-mentioned opposite, the result who obtains when the film formation condition of utilizing described example is supplied the sputter electric energy for ITO negative electrode 104 is shown in the table 7.

Table 7

Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)
Measurement point	Ito thin film thickness (nm)	Surface resistivity (Ω)	Resistivity (μ Ω cm)	????1	????185	????9.99	????185
????2	????191	????9.99	????190	????1	????185	????9.99	????185
????2	????191	????9.99	????190	????3	????187	????9.81	????184
????4	????185	????9.76	????180	????3	????187	????9.81	????184
????4	????185	????9.76	????180	????5	????186	????9.99	????186
????6	????186	????10.30	????192	????5	????186	????9.99	????186
????6	????186	????10.30	????192	????7	????178	????10.40	????185
????8	????182	????10.00	????182	????7	????178	????10.40	????185
????8	????182	????10.00	????182	????9	????186	????9.99	????186
????10	????178	????10.00	????178	????9	????186	????9.99	????186
????10	????178	????10.00	????178	????11	????185	????10.00	????185
????12	????180	????10.60	????191	????11	????185	????10.00	????185
????12	????180	????10.60	????191	Maximum value	????191	????10.60	????192
Minimum value	????178	????9.76	????178	Maximum value	????191	????10.60	????192
Minimum value	????178	????9.76	????178	Mean value	????184	????10.07	????185
Distribute (%)	????±3.5	????±4.2	????±3.8	Mean value	????184	????10.07	????185

As can be seen from Table 7, in described example, each performance number, promptly ito thin film thickness, surface resistivity and resistivity are not subjected to the position influence of measurement point; Its distribution is respectively ± 3.5%, ± 4.2% and ± 3.8%.Therefore in the tolerable limit that is distributed in product of described performance number, can on the substrate 106 that is installed on the disk 103, be formed on uniform ito thin film on the whole base plate 106.

Industrial applicability

As above describe in detail, according to sputtering equipment of the present invention, described collector has the shape about two mutually orthogonal central axis symmetries in the target plane, and center on the whole periphery of described target, and be provided with the process gas discharge port of discharging process gas in the mode that distributes at whole collector. The result, when target during by sputter, can be fed to equably process gas on the whole surface of target from the process gas discharge port, eliminate simultaneously from the impact of the gas componant that is coated in the organic matter discharge on the described substrate surface, therefore can form at whole substrate the coating of uniform thickness and quality.

And preferably, described collector is divided at least two collector parts. As a result, each collector part can be shorter, therefore can prevent reducing of the process gas fill rat that causes owing to collector is long and pressure.

And preferably, above-mentioned process gas feeding mechanism has at least two process gas sources of supply, and described at least two collectors partly are connected to one of described process gas source of supply. As a result, can control respectively fill rat and the pressure of the process gas of each collector part.

And preferably, described process gas discharge port comprises a plurality of holes or otch. As a result, described process gas discharge port can easily be distributed in around the whole surface of target.

And, preferably, in sputter procedure, make negative electrode and collector be shielded from a plurality of process gas through holes on the plasma shield plate of plasma and regulate flowing of the process gas of discharging from the process gas discharge port towards target. As a result, process gas can evenly be fed on the whole surface of target, keeps simultaneously negative electrode and collector to be shielded from the effect of plasma in sputter procedure.

And preferably, each process gas through hole comprises a semicircular hole that cuts out. As a result, can adopt simple processing to obtain enough flow adjustment effects.

In addition, according to sputtering equipment of the present invention, described a plurality of supply units of described negative electrode being supplied the sputter electric energy are being installed in mutually different position along the direction perpendicular to described substrate motion direction. As a result, near the plasma density that forms the target can the whole surface at target, evenly, therefore can form on the whole surface of substrate the film of uniform thickness and quality.

And preferably, the position of a plurality of supply units is definite like this, namely distributes based on the film thickness on the described substrate of adjacent another described supply unit position based on the film thickness distributed compensation on the described substrate of a supply unit position. As a result, can form thickness and the more uniform film of quality at whole substrate.

And preferably, described supply unit consists of like this, namely supplies sputter electric energy through the conductor of face contact to described negative electrode along the direction perpendicular to the substrate motion direction. As a result, the sputter electric energy isotropically propagates into the target periphery, therefore can keep reliably near the plasma density space uniform that forms the target.

And, preferably, arrange a plurality of negative electrodes along the direction of motion of described substrate. As a result, can improve the formation rate of film, make simultaneously glow discharge state keep stable.

Claims

1. sputtering equipment comprises:

Vacuum chamber;

Be positioned at least one negative electrode of described vacuum chamber, connect a plate shape target in the face of at least one substrate on the described negative electrode, this substrate has and is coated in its surperficial organism;

Be used for process gas is fed near the target process gas feeding mechanism;

Wherein, described process gas feeding mechanism comprises a collector, and this collector has the symmetric shape of central axis difference about two mutually orthogonals in the described target plane, and is arranged to the whole periphery around described target; And be distributed in process gas discharge port on the whole described collector, be used for process gas is discharged into described target.

2. sputtering equipment as claimed in claim 1 is characterized in that, described collector is divided at least two collector parts.

3. sputtering equipment as claimed in claim 2 is characterized in that, described process gas feeding mechanism has at least two process gas sources of supply, and described at least two collectors partly are connected to one of described process gas source of supply.

4. as the arbitrary described sputtering equipment of claim 1 to 3, it is characterized in that described process gas discharge port comprises a plurality of holes or otch.

5. as the arbitrary described sputtering equipment of claim 1 to 4, it is characterized in that, described sputtering equipment also comprises the plasma shield plate, this plate is arranged to the whole periphery around described target, be used for making described negative electrode and described collector be shielded from plasma body in sputter procedure, wherein each described plasma shield plate has a plurality of process gas through holes that are distributed on the whole described plasma shield plate, is used to regulate flowing of the process gas of discharging from described process gas discharge port towards described target.

6. sputtering equipment as claimed in claim 5 is characterized in that, each described process gas through hole comprises the hole that cuts out of a semicircle.

7. sputtering equipment, this sputtering equipment forms conductive film by DC/RF superimposed type magnetron sputtering method at least one substrate, and this sputtering equipment comprises:

Vacuum chamber;

Be positioned at described vacuum chamber and have at least one negative electrode of target mounted thereto;

Be used in described vacuum chamber moving described at least one substrate, making the running gear of described at least one real estate simultaneously to described target along pre-determined direction;

Be connected in described at least one negative electrode and direct current energy and the synergetic sputter electric energy of radio-frequency electrical energy are fed to a plurality of supply units on described at least one negative electrode;

Wherein said a plurality of supply unit is arranged to, and supplies sputter electric energy in mutually different position on the direction perpendicular to described pre-determined direction to described at least one negative electrode.

8. sputtering equipment as claimed in claim 7, it is characterized in that, the position of described a plurality of supply units is specified to, distribute based on the film thickness on described at least one substrate of a described supply unit position, replenish and distribute based on the film thickness on described at least one substrate of adjacent another described supply unit position.

9. as claim 7 or 8 described sputtering equipments, it is characterized in that, also comprise along direction contacting the conductor that is provided with described at least one cathode plane, and described supply unit is arranged to through described conductor described at least one negative electrode supply sputter electric energy perpendicular to pre-determined direction.

10. as the arbitrary described sputtering equipment of claim 7 to 9, it is characterized in that arrange at least two negative electrodes along described pre-determined direction, one of wherein said supply unit is connected in one of negative electrode, and another supply unit is connected in another negative electrode.