WO2002061166A1 - Spattering device - Google Patents

Spattering device Download PDF

Info

Publication number
WO2002061166A1
WO2002061166A1 PCT/JP2002/000659 JP0200659W WO02061166A1 WO 2002061166 A1 WO2002061166 A1 WO 2002061166A1 JP 0200659 W JP0200659 W JP 0200659W WO 02061166 A1 WO02061166 A1 WO 02061166A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
spattering
manifolds
process gas
spattering device
Prior art date
Application number
PCT/JP2002/000659
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroaki Sako
Original Assignee
Nippon Sheet Glass Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001020125A external-priority patent/JP2002220662A/en
Priority claimed from JP2001037295A external-priority patent/JP3484423B2/en
Application filed by Nippon Sheet Glass Co., Ltd. filed Critical Nippon Sheet Glass Co., Ltd.
Priority to US10/221,911 priority Critical patent/US20030159925A1/en
Publication of WO2002061166A1 publication Critical patent/WO2002061166A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A spattering device (1) capable of forming an ITO film by a target (8) on a glass substrate (5) installed on a rotating carousel (4) by spattering the target (8) with plasma ions by using a magnetron spattering method, wherein manifolds (9) and (10) are disposed so as to surround all the periphery of the target (8) in such a form symmetrical, in the plane of the target (8), with respect to the center axes thereof perpendicular to each other, and process gas discharge ports (9a) and (10a) are provided dispersedly on the entire surfaces of the manifolds (9) and (10) to discharge process gas onto the target (8).
PCT/JP2002/000659 2001-01-29 2002-01-29 Spattering device WO2002061166A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/221,911 US20030159925A1 (en) 2001-01-29 2002-01-29 Spattering device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001020125A JP2002220662A (en) 2001-01-29 2001-01-29 Sputtering apparatus
JP2001-20125 2001-01-29
JP2001-37295 2001-02-14
JP2001037295A JP3484423B2 (en) 2001-02-14 2001-02-14 Sputtering equipment

Publications (1)

Publication Number Publication Date
WO2002061166A1 true WO2002061166A1 (en) 2002-08-08

Family

ID=26608439

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000659 WO2002061166A1 (en) 2001-01-29 2002-01-29 Spattering device

Country Status (4)

Country Link
KR (1) KR20030013379A (en)
CN (1) CN1455826A (en)
TW (1) TW562869B (en)
WO (1) WO2002061166A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012132064A (en) * 2010-12-21 2012-07-12 Canon Anelva Corp Reactive spattering device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116430A1 (en) * 2008-03-17 2009-09-24 株式会社アルバック Magnetron sputtering apparatus and magnetron sputtering method
KR200450682Y1 (en) * 2008-04-25 2010-10-21 (주) 에이알티 Cathode
JP5976846B2 (en) 2013-01-16 2016-08-24 日東電工株式会社 Transparent conductive film and method for producing the same
JP6215062B2 (en) 2013-01-16 2017-10-18 日東電工株式会社 Method for producing transparent conductive film
JP6261987B2 (en) 2013-01-16 2018-01-17 日東電工株式会社 Transparent conductive film and method for producing the same
JP6261988B2 (en) 2013-01-16 2018-01-17 日東電工株式会社 Transparent conductive film and method for producing the same
KR102115476B1 (en) * 2013-02-28 2020-05-27 삼성디스플레이 주식회사 Sputtering apparatus
WO2016126650A1 (en) * 2015-02-03 2016-08-11 Cardinal Cg Company Sputtering apparatus including gas distribution system
CN114277348B (en) * 2021-12-27 2023-06-30 晋能清洁能源科技股份公司 Method for controlling magnetron sputtering equipment in HJT battery production

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109569A (en) * 1993-10-08 1995-04-25 Shincron:Kk Formation of thin film
WO1996039794A1 (en) * 1995-06-05 1996-12-12 Tohoku Unicom Co., Ltd. Power supply for multielectrode discharge
JPH0978232A (en) * 1995-09-12 1997-03-25 Ulvac Japan Ltd Non-planar cathode and supporting device using the same and production of thin film
US5667650A (en) * 1995-02-14 1997-09-16 E. I. Du Pont De Nemours And Company High flow gas manifold for high rate, off-axis sputter deposition
JPH10265951A (en) * 1997-03-27 1998-10-06 Canon Inc Sputter film, liquid crystal element and their production
JPH11335819A (en) * 1998-05-22 1999-12-07 Dainippon Printing Co Ltd Vacuum deposition device
JP2000307139A (en) * 1999-04-21 2000-11-02 Fuji Electric Co Ltd Manufacture of thin film solar cell and thin film electrode layer forming device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109569A (en) * 1993-10-08 1995-04-25 Shincron:Kk Formation of thin film
US5667650A (en) * 1995-02-14 1997-09-16 E. I. Du Pont De Nemours And Company High flow gas manifold for high rate, off-axis sputter deposition
WO1996039794A1 (en) * 1995-06-05 1996-12-12 Tohoku Unicom Co., Ltd. Power supply for multielectrode discharge
JPH0978232A (en) * 1995-09-12 1997-03-25 Ulvac Japan Ltd Non-planar cathode and supporting device using the same and production of thin film
JPH10265951A (en) * 1997-03-27 1998-10-06 Canon Inc Sputter film, liquid crystal element and their production
JPH11335819A (en) * 1998-05-22 1999-12-07 Dainippon Printing Co Ltd Vacuum deposition device
JP2000307139A (en) * 1999-04-21 2000-11-02 Fuji Electric Co Ltd Manufacture of thin film solar cell and thin film electrode layer forming device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012132064A (en) * 2010-12-21 2012-07-12 Canon Anelva Corp Reactive spattering device
US9034152B2 (en) 2010-12-21 2015-05-19 Canon Anelva Corporation Reactive sputtering apparatus
US9905401B2 (en) 2010-12-21 2018-02-27 Canon Anelva Corporation Reactive sputtering apparatus

Also Published As

Publication number Publication date
KR20030013379A (en) 2003-02-14
TW562869B (en) 2003-11-21
CN1455826A (en) 2003-11-12

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