JP2011101064A - Plasma cvd apparatus, and method of manufacturing silicon-based film employing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To overcome the problem that a plasma CVD apparatus capable of forming a silicon-based film for a large-area substrate at high speed and with high quality and a method of manufacturing the silicon-based film using such an apparatus are required, and particularly the problem that a plasma CVD technology capable of preventing generation of powders is strongly demanded in order to improve the productivity and reduce the costs in application fields of the plasma CVD apparatus for manufacturing a microcrystal silicon film for a thin-film silicon solar cell, a passivation film for a polycrystal silicon solar cell and others. <P>SOLUTION: In a plasma CVD apparatus with a pair of parallel flat-plate electrodes, irregularities are provided on an electrode having gas eruption holes, and a plurality of material gas eruption holes for erupting only the material gas are disposed at the protrusion, while a plurality of dilution gas eruption holes for erupting only the dilution gas are disposed at the recess. The material gas eruption holes are provided so that the eruption direction is oriented toward any direction other than a normal line direction of the substrate surface. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to a plasma CVD apparatus for forming a thin film on the surface of a substrate using plasma and a method for producing a silicon-based film using the plasma CVD apparatus.
In addition, the present invention is used to form an insulating thin film (silicon nitride film, silicon oxide film, etc.) such as an amorphous Si film and a microcrystalline Si film, which are power generation films of a thin film solar cell, and a thin film transistor such as a liquid crystal display. The present invention relates to a plasma CVD apparatus and a silicon film manufacturing method using the plasma CVD apparatus.
The present invention also relates to a plasma CVD apparatus used for forming a silicon nitride film, a silicon oxide film, and the like used for a reflective film and a passivation film of a polycrystalline silicon solar cell, and a silicon-based film manufacturing method using the plasma CVD apparatus.

A typical conventional example relating to a plasma CVD apparatus and a plasma CVD method is shown in FIG. In FIG. 20, a vacuum vessel 100 has a first electrode 102 having a gas shower hole (gas ejection hole) 101 for generating plasma and an electrically grounded second electrode 104 on which a substrate 103 is placed. Installed in parallel. For example, power having a frequency of 13.56 MHz is supplied to the first and second electrodes 102 and 104 from a power supply system 108 including a high-frequency power source 105, an impedance matching unit 106, and a coaxial cable 107.
A gas shower hole (gas ejection hole) 101 includes, for example, silane gas (SiH 4) and hydrogen from a gas supply system 113 including a gas supply source 109, a first gas introduction pipe 110, a valve 111, and a second gas introduction pipe 112. A mixed gas 114 of gas (H 2) is supplied, and the mixed gas 114 is ejected from the gas shower hole (gas ejection hole) 101. The jetted mixed gas 114 is exhausted through exhaust pipes 115a and 115b by a vacuum pump (not shown). The substrate 103 is heated to a predetermined temperature by an electric heater (not shown) built in the second electrode.

For example, when a microcrystalline Si thin film is formed on the surface of the substrate 103 using the apparatus of FIG. 20, a mixed gas 114 of silane gas (SiH 4) and hydrogen gas (H 2) is ejected from a gas shower hole (gas ejection hole) 101. For example, power having a frequency of 13.56 MHz is supplied between the first electrode and the second electrode. A strong electric field is generated between the pair of electrodes by the electric power. When a strong electric field is generated, electrons accelerated by the electric field collide with molecules of silane gas (SiH 4) and hydrogen gas (H 2), and ionization occurs. When gas molecules are ionized, a glow discharge or plasma is generated. When plasma is generated, electrons and ions in the plasma collide with molecules of silane gas (SiH4) and hydrogen gas (H2), and dissociate and decompose them. In addition to various positive ions and negative ions, Various radicals that are active and electrically neutral are generated. In this case, for example, SiH ₃ , SiH ₂ , SiH, H, etc. are generated as radicals. The radicals move from the plasma to the substrate surface by a diffusion phenomenon and are deposited on the surface of the substrate. As a result, for example, amorphous Si or microcrystalline Si is formed on the substrate.
When forming high-quality amorphous Si or microcrystalline Si, it is important to increase the concentration of SiH _{3 in} the plasma and to grasp the conditions for realizing it. Generally known. Further, it is generally known that the main cause when a poor film is formed is a reaction mainly composed of SiH ₂ preradicals. Further, when the concentration of SiH _{2 in} the plasma is increased, powder (particle) is generated in the gas phase of the plasma, and the powder is mixed into the film to be formed. As a result, a poor film is formed. That is also generally known

When the apparatus shown in FIG. 16 is used, the film thickness distribution of the formed silicon-based thin film is roughly represented by the following equation as described in Non-Patent Document 1.
I (x) = cos ² (2πx / λ)
Where I (x) is the thickness of the film, x is the distance from the center of the substrate to the peripheral direction, and λ is the wavelength of the power used (wavelength in the plasma).
This equation shows that the uniformity of the film depends on the wavelength in the plasma of the power used. For example, when the frequency is 13.56 MHz (wavelength λ ₀ = 22.1 m in vacuum) and the wavelength shortening ratio λ / λ _{0 in} plasma is 0.65, the flat portion of cos ² (2πx / λ) is the center of the substrate If it is in the range of λ / 8 in the vicinity of the point, it means that a substantially uniform film can be obtained over an area having a diameter of about 1.8 m.

Typical examples of the application of the plasma CVD apparatus and the plasma CVD method to the industrial field include the thin film solar cell field and the liquid crystal display field. In any of these applications, there has been a demand for higher performance and lower cost of semiconductor thin film products, and research and development are being conducted to meet these needs. Specifically, research and development have been conducted aiming at practical application of a plasma CVD apparatus and a plasma CVD method capable of increasing the area, quality, and high speed film formation.
Recently, in order to form a high-quality film at high speed, there are many examples of development of plasma generators using a hollow cathode discharge method. Note that it is generally known that a plasma generation method using hollow cathode discharge can obtain high-density plasma with low power.
However, an apparatus and method that can sufficiently meet the above needs have not been announced. That is, in an application for a large-area substrate, a plasma CVD apparatus capable of producing a high-quality silicon-based film at a high speed and a silicon-based film manufacturing method using the plasma CVD apparatus have not been realized yet. Therefore, creation of new technology is desired.

Patent Document 1 describes, as problems, suppression of ion damage caused by plasma, control of a film composition ratio and film formation speed, stability of plasma generation, and suppression of particle generation.
In order to solve the problem, the following invention is described. That is, the invention described in Patent Document 1 includes a vacuum container to be evacuated, and a number of gas ejection holes that are housed in the vacuum container and into which gas is introduced and that gas is ejected to the lower surface. In a plasma CVD apparatus comprising a high-frequency electrode having a high-frequency electrode and a holder-cum-electrode that is accommodated in the vacuum container so as to face the high-frequency electrode, a gas is introduced into the plasma CVD apparatus. An intermediate electrode having a large number of through-holes penetrating through the surface and a large number of gas ejection holes for ejecting the gas to the surface of the holder-cum-electrode is provided between the high-frequency electrode and the holder-cum-electrode between the space A high-frequency power is supplied between the intermediate electrode and the high-frequency electrode, and an exhaust port for evacuating the inside of the vacuum vessel is provided at a substantially central portion on the back side of the holder-cum-electrode. In the high-frequency electrode, all the gases except the raw material gas that is a raw material for forming a film are introduced and ejected from the gas ejection holes of the electrode, and in the intermediate electrode, A material gas or a mixed gas of the source gas and a dilution gas is introduced and ejected from a gas ejection hole of the electrode, and an annular heater is provided in the high-frequency electrode.

Patent Document 2 discloses the following as a problem. In the manufacture of i-type microcrystalline silicon thin films for thin film silicon solar cells, high-speed film formation (for example, 8.3 nm / s or more) capable of depositing a microcrystalline silicon thin film having a thickness of 2.5 μm in about 5 minutes is performed. Realization is required. In the conventional method of depositing a microcrystalline silicon thin film by the plasma CVD method, by adjusting the flow ratio of silane gas to hydrogen in a silane gas / hydrogen gas mixed gas, that is, (SiH ₄ ) / (SiH ₄ + H ₂ ), Therefore, the crystallinity of the film and the deposition rate are in a trade-off relationship. That is, as a film forming condition for improving crystallinity, when the flow rate of hydrogen is increased (the flow rate of SiH ₄ is decreased), the deposition rate is greatly reduced to about 1 nm / s or less, and the above 8.3 nm / s. There is a problem that the above deposition rate cannot be obtained.
Further, in the conventional method of depositing a microcrystalline silicon thin film by the plasma CVD method, the film is formed by increasing the high frequency power for the purpose of increasing the deposition rate. In this case, since the silane gas is easily dissociated in the plasma by electron collision, if the high-frequency power is increased to increase the electron density of the plasma, a large amount of SiH ₂ , SiH, Si is generated, and the particles are generated in the gas phase. There is a problem that a silicon film having many defects is generated.
In order to solve the problem, the following invention is described. That is, a substrate stage and a plasma electrode are arranged in the film forming chamber so as to face each other, and silane gas and hydrogen gas are supplied to the plasma electrode, and a high frequency voltage is applied to generate plasma and hold it on the substrate stage. In the thin film forming apparatus for forming a microcrystalline silicon thin film on the formed substrate, silane gas supply means for blowing the silane gas supplied to the plasma electrode from the outside of the film forming chamber onto the substrate, Hydrogen supply means for converting the hydrogen gas supplied to the plasma electrode from the outside into hydrogen plasma and blowing it onto the substrate so as to come into contact with the silane gas blown from the silane gas supply means, thereby converting the silane gas into plasma And.

Patent Document 3 discloses the following as a problem. In a conventional plasma CVD apparatus, high-speed film formation can be achieved by creating high-pressure and depletion conditions for the source gas. However, this method is not sufficient, and for example, the film formation rate (about 10 nm / s) required for manufacturing a microcrystalline silicon thin film solar cell in industry cannot be achieved. Further, under high pressure conditions, powder is easily formed in the gas phase, which reduces the operating rate of the apparatus.
In order to solve the problem, the following invention is shown. That is, Patent Document 3 discloses a reaction vessel, a means for introducing a reaction gas into the vessel, a means for exhausting the gas, a discharge electrode comprising a cathode and an anode housed in the vessel, and supplying power to the electrode. In a plasma CVD apparatus having a power source and forming a thin film on a substrate surface installed in a reaction vessel, a showerhead type inlet for uniformly introducing the reaction gas into the substrate surface and the cathode electrode are integrated A plurality of recesses are provided on the surface of the cathode electrode, a hole smaller than the short side of the recess is formed in the bottom of the recess, and the hole serves as a reaction gas inlet.

Patent Document 4 discloses the following as a problem. In the field of thin film solar cells, a large area is required to improve power generation capacity and production efficiency. However, there is a fact that the photoelectric conversion characteristics of a thin film solar cell manufactured by a plasma CVD apparatus having parallel plate electrodes tend to vary depending on the local planar position on the substrate. This is because abnormal discharge occurs in the film forming chamber. For this tendency, high pressure (when the reaction gas pressure is high), narrow electrode spacing (when the distance between the substrate and the counter electrode is narrow), and high power (when high high-frequency power density) are selected as the film forming conditions. This will be noticeable. It should be noted that the plasma generated under these conditions has a non-uniform intensity and abnormal discharge in which plasma is generated even between the electrodes.
In order to solve the problem, the following invention is shown. That is, the invention described in Patent Document 4 includes a plasma CVD reaction chamber, a substrate support electrode for supporting a film-forming substrate in the reaction chamber, and a counter electrode that should face the substrate. A gas blower face plate having a plurality of gas blowout holes and a plurality of differential pressure adjustment holes, wherein the differential pressure adjustment holes are inlets of the gas blowout holes. The gas blowing hole is smaller in thickness than the thickness of the gas blowing face plate, the inlet side of the gas blowing hole is connected to the differential pressure adjusting hole, and the gas blowing face plate Is characterized in that a plasma promoting groove for promoting the generation of plasma is formed on the surface facing the substrate.

Patent Document 5 discloses the following as a problem. A conventional cathode electrode using a hollow cathode discharge forms an uneven portion to be a hollow cathode electrode by forming a hole in a plate material constituting a flat cathode electrode by processing such as cutting. The bottom surface of the concave portion of the cathode electrode is formed as a single plane, and the distance from the end of the convex portion and the distance from the anode electrode are constant. In this configuration, the dispersion state of the gas ejection amount of the reaction gas in the recess, the state of plasma discharge, and the like are not uniform over the entire surface of the cathode electrode, and are expected to vary depending on the location.
In order to solve the problem, the following invention is shown. That is, the invention described in Patent Document 5 is an electrode that forms a high-frequency capacitively coupled plasma by applying a high frequency, the cathode electrode is disposed facing the anode electrode, and the facing surface facing the anode electrode is: It has a concavo-convex shape composed of a concave portion formed of a bottom surface and a convex portion formed of a plurality of protruding portions protruding from the bottom surface of the concave portion toward the anode electrode side, and at least one of the convex portions is , Having at least one reactive gas ejection hole that enables ejection of the reactive gas on the side surface, all the protrusions forming the convex portions have the same height level at the end on the anode electrode side, and The bottom surface forming the recess includes a plurality of bottom surface portions having different distances from the height level of the end portion of the protruding portion.

Japanese Patent No. 2601127 (FIGS. 1 and 2) JP 2010-73970 (FIGS. 1 to 3) JP-A-2004-296526 (FIGS. 1, 3, and 4) Patent 4578693 (FIGS. 1 to 9) JP 2009-253102 A (FIGS. 7 and 8) A. Perret, P.A. Chabert, J. et al. P. Booth, J. et al. Jolly, J.M. Guillon and Ph. Auray: Applied Physics Letters, Vol. 83, no. 2 (14 July 2003), 243-245.

  The conventional plasma CVD apparatus and plasma CVD method have various problems as pointed out in Patent Documents 1 to 5, and cannot sufficiently meet the needs of the semiconductor-related industry. In particular, there is a need in the field of thin film solar cells and liquid crystal displays, that is, a plasma CVD apparatus capable of forming a high-quality film at high speed on a large-area substrate, and a silicon-based film manufacturing method using the plasma CVD apparatus. There is a problem that it is not possible to sufficiently deal with practical use.

Also, the invention described in the above patent document has the following problems and it is difficult to meet the above needs.
Below, the problem which the plasma CVD apparatus by the invention of the said patent documents 1-5 and the plasma CVD method have is demonstrated.

First, in the invention described in Patent Document 1, all gases (for example, a dilution gas and a reactive gas) except a raw material gas are converted into plasma between the high-frequency electrode and the intermediate electrode (plasma generation region), and the plasma is converted into the intermediate electrode. From the through hole (opening) provided in the outer electrode, it is drawn out to the outside (substrate side) of the intermediate electrode, and the source gas (silane gas) provided on the outer side (substrate side) of the intermediate electrode or the diluted gas and mixed gas are supplied. It is structured to blow out from a large number of gas jet holes. Further, as a technical feature of the present invention, the excited active tumor generated in the plasma generation region passes through the through hole of the intermediate electrode by the gas flow from the plasma generation region, and is outside the intermediate electrode (substrate side), that is, the plasma non-existence. It is described that it is led to the generation area. In addition, the excited active tumor guided to the outside of the intermediate electrode through the through hole of the intermediate electrode and the source gas (silane gas) guided to the non-plasma generating region cause a chemical reaction in the vicinity of the surface of the substrate. It is described that a film is formed on the surface.
Here, in the above invention, (ii) the excitation active tumor necessary for forming a film deposited on the substrate is guided to the outside of the intermediate electrode through the through-hole of the intermediate electrode; It is assumed that the excited active tumor and the non-plasma source gas cause a chemical reaction near the substrate.
However, electrically neutral excited active tumors among excited activated tumors are less affected by gas flow and follow a diffusion phenomenon. That is, the amount of neutral excitation active tumor that flows through the through hole is proportional to the gradient of neutral excitation active tumor concentration. This means that in the configuration of the invention, the concentration of the neutral excitation active tumor led to the vicinity of the substrate is not so high. The excited active tumor in the excited active tumor is less affected by the gas flow and follows the electrical event. That is, since the plasma generation region and the plasma inside the through hole are held by the sheath surrounding the plasma generating region, the amount of electrically excited excited active tumor that flows through the through hole is extremely small. This means that in the configuration of the present invention, the density (concentration) of the electroactive tumor that is led to the vicinity of the substrate is not so high.
Therefore, in the above-described invention based on the above (ii) and (b), it is difficult to realize a plasma CVD apparatus capable of high-quality film formation at high speed. In addition, a plasma CVD apparatus to which the above invention or a remote plasma (plasma generated outside the film forming chamber) having the same configuration as the above invention is applied is generally unsuitable for high-speed film formation.

Next, the invention described in Patent Document 2 is such that a hydrogen gas that has been converted to plasma and a silane gas (raw material gas) that has not been converted to plasma are ejected and brought into contact with the vicinity of the substrate in a film formation chamber in which the substrate is disposed. The silane gas is converted into plasma by the hydrogen gas plasma, and a silicon film is formed on the substrate by the excited active tumor of the hydrogen plasma and silane plasma generated as a result. According to the configuration of the apparatus shown as the embodiment, the substrate stage and the plasma electrode are arranged to face each other in the film forming chamber, and a plurality of circular through holes are provided in the plasma electrode, and each of the plurality of through holes is provided. In the center of each, a circular tube is arranged. The end of the circular tube on the substrate side is a silane gas outlet, and the end of the through hole on the substrate side is a hydrogen gas outlet. Silane gas is ejected from the plurality of outlets toward the substrate, and hydrogen gas is ejected from the outlet toward the substrate. A high-frequency voltage is applied to the gap (gap) between the circular tube that blows out the silane gas and the through hole to generate hydrogen plasma. Further, a high-frequency voltage applied to the plasma electrode generates plasma of a mixed gas of silane gas and hydrogen gas between the plasma electrode and the substrate stage.
Since the hydrogen gas outlet and the silane gas outlet are located on the surface of the plasma electrode, the two outlets are located at an equal distance from the substrate surface. Moreover, the direction of the gas ejected from the blowout port is directed to the normal direction of the substrate.
Here, in the above invention, (ha) introducing plasma hydrogen into the film formation chamber in which the substrate is arranged and silane gas not plasma is introduced, (ii) the plasma density of the hydrogen plasma is high, for example 1 × ^{10 10 (cm -3)} or more and then, the plasma density of silane plasma is low, for example, ^{1x10 10 (cm -3)} to below, are considered on the assumption that.
To realize high-quality and high-speed film formation, increase the concentration of SiH ₃ radicals that contribute to the formation of high-quality films, and suppress the generation of SiH ₂ radicals, which are the main factors that inhibit the formation of high-quality films. A means to do is necessary. However, there is no description of a means for increasing the SiH ₃ radical concentration, a means for reducing the SiH ₂ radical concentration, or suppressing its generation. Moreover, there is no description which suggests that.
Furthermore, since the parameters for the generation of SiH ₂ and SiH ₃ radicals are not high or low in plasma density, but high or low in plasma energy or high or low in electron temperature, the characteristics of the invention described in Patent Document 3, that is, ( It is difficult to increase the concentration of SiH ₃ radicals and suppress the generation of SiH ₂ with (ii) alone.
SiH ₂ radicals that contribute to the formation of a rough film are generated by collision of electrons having an energy of 9.47 eV or more with SiH _4, and SiH ₃ radicals that contribute to the formation of a good quality film have an SiH ₄ production of 8.75 eV or more. It is generally known that it is generated by the collision of energetic electrons.
Further, according to the apparatus configuration shown as an embodiment, hydrogen plasma is generated in the gap between the circular tube for blowing out the silane gas and the through hole, and between the plasma electrode and the substrate stage, that is, in two spaces. Therefore, the conditions for generating hydrogen plasma in the gap between the circular tube that blows out the silane gas and the through hole and the conditions for generating hydrogen plasma between the plasma electrode and the substrate stage are significantly different. Therefore, it is difficult to simultaneously generate stable plasma in the two spatial regions. This means that it is very difficult to realize the above (ha) and (ii) by the above embodiment.
Therefore, in the above invention, it is difficult to realize a plasma CVD apparatus capable of high-quality film formation at high speed.
Further, according to the apparatus configuration shown as an embodiment, the gap between the circular pipe that blows out the silane gas, which is a space for generating hydrogen plasma, and the through hole that blows out the hydrogen gas is adjusted and manufactured. It is technically difficult to do this, and it is presumed that the manufacturing cost is remarkably increased particularly when a large-area substrate is targeted.
In addition, when a high-quality microcrystalline silicon film is formed on a large-area substrate, a method of supplying a large amount of hydrogen gas in addition to a source gas (silane gas) is generally used. According to the configuration of the apparatus, since it is necessary to manufacture in the form of a double pipe comprising a huge number of silane gas blowing circular tubes and the hydrogen gas blowing through holes, it is technically difficult and the production cost is low. It is inferred that it will be significantly higher.

Next, in the invention described in Patent Document 3, a reactive gas is ejected from a gas ejection hole provided on the bottom surface of a recess provided in a cathode electrode, and high-density plasma is generated by a hollow cathode discharge effect of the recess structure. Assumes that.
However, in order to form a high-quality silicon-based thin film under high-speed film forming conditions, a control means regarding generation of SiH ₃ radicals and generation of SiH ₂ radicals is necessary. The expectation of the hollow-casaw discharge effect of the concave structure provided on the cathode electrode means that high-density plasma can be generated, and the input power in plasma generation using a typical parallel plate electrode with gas shower holes It can be said that there is no difference from the conventional method of increasing the plasma density to increase the plasma density and, as a result, achieve high-speed film formation.
Further, according to the invention described in Patent Document 3, the reaction gas is made into high-density plasma while the reaction gas is ejected from the gas ejection holes in the bottom surface of the recess having the hollow cathode discharge effect. As a result, when the mixed gas of silane gas and hydrogen gas becomes high-density plasma, radicals such as SiH ₃ , SiH ₂ , SiH, Si, and H radicals are generated in large quantities, and the conditions for high-speed film formation are satisfied. However, the condition covers not only the vicinity of the substrate surface and the substrate surface but also the entire film formation chamber. In particular, the silicon-based film is deposited at a high speed also on the bottom and side surfaces of the recess having the hollow cathode discharge effect in which stagnation occurs in the gas flow.
In this case, it is conceivable that the silicon-based film deposited on the bottom and side surfaces of the recess is peeled off by the gas ejected from the reaction gas ejection hole, and the fragments are mixed into the film on the substrate surface. Even if the silicon-based film deposited on the bottom and side surfaces of the recess does not peel off, the silicon film is deposited at that location at a high speed, so it is necessary to frequently clean it at the production site. There is a possibility that the operating rate of the device will drop.
In addition, since the density of the SiH ₂ radical increases due to the hollow cathode discharge effect in the vicinity of the reactive gas ejection hole, the concentration of SiH ₂ radicals increases, and disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ), trisilane (SiH ₂ + Si). ₂ H ₆ → Si ₃ H ₈ ) and tetrasilane (SiH ₂ + Si ₃ H ₈ → Si ₄ H ₁₀ ) are produced.
Therefore, it can be said that it is difficult to realize a plasma CVD apparatus capable of high-quality and high-speed film formation in the above invention.

Next, in the invention described in Patent Document 4, a reactive gas is ejected from a gas ejection hole in a bottom surface of a recess provided in a cathode electrode, and high-density plasma is generated by a hollow cathode discharge effect of the recess structure. Assumes that. Moreover, it has a structure having a plasma promotion groove having an effect of promoting plasma generation.
In order to form a high-quality silicon-based thin film under high-speed film forming conditions, a control means for increasing the generation of SiH ₃ radicals and suppressing the generation of SiH ₂ radicals is necessary. However, the expectation of the hollow-casaw discharge effect of the concave structure provided in the cathode electrode and the promotion effect of plasma generation in the plasma promotion groove only means that high-density plasma can be generated. In the plasma generation using the attached parallel plate electrode, it can be said that there is no difference from the conventional method of increasing the input power to increase the plasma density and, as a result, achieving high-speed film formation.
Moreover, according to invention of patent document 4, this reactive gas is made into high-density plasma, ejecting a reactive gas from the gas ejection hole which exists in the bottom face of the recessed part which has a hollow cathode discharge effect. As a result, when the mixed gas of silane gas and hydrogen gas becomes high-density plasma, radicals such as SiH ₃ , SiH ₂ , SiH, Si, and H radicals are generated in large quantities, and the conditions for high-speed film formation are satisfied. However, the condition covers not only the vicinity of the substrate surface and the substrate surface but also the entire film formation chamber. In particular, the silicon-based film is deposited at a high speed also on the bottom and side surfaces of the recess having the hollow cathode discharge effect in which stagnation occurs in the gas flow.
In this case, it is conceivable that the silicon-based film deposited on the bottom and side surfaces of the recess is peeled off by the gas ejected from the reaction gas ejection hole, and the fragments are mixed into the film on the substrate surface. Even if the silicon-based film deposited on the bottom and side surfaces of the recess does not peel off, the silicon film is deposited at that location at a high speed, so it is necessary to perform frequent cleaning for application to the production site. There is a possibility that the operating rate of the device will drop.
In addition, since the density of the SiH ₂ radical increases due to the hollow cathode discharge effect in the vicinity of the reactive gas ejection hole, the concentration of SiH ₂ radicals increases, and disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ), trisilane (SiH ₂ + Si). ₂ H ₆ → Si ₃ H ₈ ) and tetrasilane (SiH ₂ + Si ₃ H ₈ → Si ₄ H ₁₀ ) are produced.
Therefore, it can be said that it is difficult to realize a plasma CVD apparatus capable of high-quality and high-speed film formation in the above invention.

Next, in the invention described in Patent Document 5, a reactive gas is ejected from the gas ejection holes provided on the side surfaces of a plurality of recesses having different depths provided in the cathode electrode. It is assumed that plasma with a density is generated.
In order to form a high-quality silicon-based thin film under high-speed film forming conditions, a control means for increasing the generation of SiH ₃ radicals and suppressing the generation of SiH ₂ radicals is necessary. However, the expectation of the hollow-casaw discharge effect of the concave structure provided in the cathode electrode is only that high-density plasma can be generated. In plasma generation using a typical parallel plate electrode with gas shower holes, It can be said that there is no difference from the conventional method of increasing the input power to increase the plasma density and, as a result, achieving high-speed film formation.
Further, according to the invention described in Patent Document 5, the reaction gas is made into high-density plasma while the reaction gas is ejected from the gas ejection holes on the side surface of the recess having a hollow cathode discharge effect. As a result, when the mixed gas of silane gas and hydrogen gas becomes high-density plasma, radicals such as SiH ₃ , SiH ₂ , SiH, Si, and H radicals are generated in large quantities, and the conditions for high-speed film formation are satisfied. However, the condition covers not only the vicinity of the substrate surface and the substrate surface but also the entire film formation chamber.
In particular, the silicon-based film is deposited at a high speed also on the bottom and side surfaces of the recess having the hollow cathode discharge effect in which stagnation occurs in the gas flow.
In this case, it is conceivable that the silicon-based film deposited on the bottom and side surfaces of the recess is peeled off by the gas ejected from the reaction gas ejection hole, and the fragments are mixed into the film on the substrate surface. Even if the silicon-based film deposited on the bottom and side surfaces of the recess does not peel off, the silicon film is deposited at that location at a high speed, so it is necessary to perform frequent cleaning for application to the production site. There is a possibility that the operating rate of the device will drop.
In addition, since the density of the SiH ₂ radical increases due to the hollow cathode discharge effect in the vicinity of the reactive gas ejection hole, the concentration of SiH ₂ radicals increases, and disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ), trisilane (SiH ₂ + Si). ₂ H ₆ → Si ₃ H ₈ ) and tetrasilane (SiH ₂ + Si ₃ H ₈ → Si ₄ H ₁₀ ) are produced.
Therefore, it can be said that it is difficult to realize a plasma CVD apparatus capable of high-quality and high-speed film formation in the above invention.

As described above, the conventional plasma CVD apparatus and plasma CVD method have a problem that a high-quality film cannot be formed on a large-area substrate at high speed.
Therefore, an object of the present invention is to provide a plasma CVD apparatus and a plasma CVD method capable of forming a large area, high quality, and high speed.

Hereinafter, means for solving the problem will be described using the numbers and symbols used in the best mode for carrying out the present invention.
These numbers and symbols are added in parentheses to clarify the correspondence between the description of the claims and the best mode for carrying out the invention. However, these numbers and symbols should not be used for interpreting the technical scope of the invention described in the claims.

  A plasma CVD apparatus according to a first aspect of the present invention includes a vacuum vessel provided with an exhaust system, a source gas supply source, a dilution gas supply source for diluting the source gas, the source gas and the dilution gas. A parallel plate type first electrode on which a substrate and an electrically non-grounded parallel plate type first electrode having a gas introduction pipe for introducing into a vacuum vessel, and gas ejection holes for ejecting the source gas and the dilution gas are mounted. A plasma CVD apparatus comprising: a pair of electrodes composed of two electrodes; and a high-frequency power supply system that supplies high-frequency power to the pair of electrodes, and forming a thin film on a substrate installed in the vacuum vessel. The gas ejection holes are composed of a plurality of source gas ejection holes (5a, 5b, 5c) for ejecting only the source gas and a plurality of dilution gas ejection holes (7a) for ejecting only the dilution gas, and the source gas Jet hole and dilution gas jet Holes spatially different positions from each other (8a, 8b, 8c, 8d, 8e, 8f) (6a, 6b, 6c, 6d, 6e) characterized in that is arranged.

  The plasma CVD apparatus according to a second aspect of the present invention is the plasma CVD apparatus according to the first aspect of the present invention, wherein the source gas ejection holes (5a, 5b, 5c) are more than the dilution gas ejection holes (7a). It is arranged at a position close to the surface of the second electrode.

  A plasma CVD apparatus according to a third aspect of the present invention is the plasma CVD apparatus according to the first or second aspect of the present invention, wherein a plurality of recesses (8a, 8b, 8c, 8d, 8e, 8f) and a plurality of convex portions (6a, 6b, 6c, 6d, 6e) are formed, source gas ejection holes (5a, 5b, 5c) are arranged in the convex portions, and dilution gas ejection holes (7a) are formed in the concave portions. ) Is arranged.

  A plasma CVD apparatus according to a fourth aspect of the present invention is the plasma CVD apparatus according to any one of the first to third aspects of the present invention, wherein the source gas is ejected between the first and second electrodes. In this case, at least a first gas header (13a) disposed on the side surface of the first electrode, a first cave-type gas introduction path (15a) disposed inside the first electrode, and a first The source gas ejection holes (5a, 5b, 5c) disposed on the surface of the first electrode are used, and when the dilution gas is ejected between the first and second electrodes, at least the first electrode The second gas header (13b) disposed on the side surface, the second cave-type gas introduction path (15b) disposed inside the first electrode, and the dilution gas disposed on the surface of the first electrode Characterized by the use of a jet hole (7a) To.

  A plasma CVD apparatus according to a fifth aspect of the present invention is the plasma CVD apparatus according to any one of the first to fourth aspects of the present invention, wherein the source gas ejection holes (5b, 5c) are formed of the source gas. It is characterized by being arranged such that the direction of ejection is directed in a direction other than the normal direction of the surface of the second electrode.

  A plasma CVD apparatus according to a sixth aspect of the present invention is the plasma CVD apparatus according to any one of the first to fifth aspects of the present invention, wherein the source gas ejection holes (5b, 5c) are two adjacent ones. The angle between the ejection directions of the source gas ejection holes (5b, 5c) is set in a range of 1 to 80 degrees.

  The plasma CVD apparatus according to a seventh aspect of the present invention is the plasma CVD apparatus according to the third aspect of the present invention, wherein the cross-sectional shape of the recess is rectangular (8a, 8b), trapezoid (8d), waveform (8c). ), Serrated shape (8e), cylindrical shape (8f) or conical shape (8g).

  The plasma CVD apparatus according to an eighth aspect of the present invention is the plasma CVD apparatus according to the third aspect of the present invention, wherein the cross-sectional shape of the convex portion is rectangular (6b), trapezoid (6d), waveform (6c) or It is a sawtooth shape (6e).

A silicon-based film manufacturing method using the plasma CVD apparatus according to the ninth aspect of the present invention includes a vacuum vessel provided with an exhaust system, a source gas supply source and a dilution gas supply source for diluting the source gas,
An electrically non-grounded parallel plate type first electrode and substrate having a gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel, and gas ejection holes for ejecting the source gas and the dilution gas A pair of electrodes composed of parallel plate-type second electrodes on which are mounted, and a high-frequency power supply system that supplies high-frequency power to the pair of electrodes, and a film is formed on a substrate installed in the vacuum vessel A method of manufacturing a silicon-based film using a plasma CVD apparatus for forming
The gas ejection holes are composed of a plurality of source gas ejection holes (5a) for ejecting only the source gas and a plurality of dilution gas ejection holes (7a) for ejecting only the dilution gas, and the source gas ejection holes (5a) Is disposed at a position (6a) close to the surface of the second electrode (3), and the dilution gas ejection hole (7a) is disposed at a position (8a) far from the surface of the second electrode (3) The source gas (17) having a short exposure time and the dilution gas (18) having a long exposure time to plasma are brought into contact with each other in the mixing region (19) to promote mixing thereof. Features.

A silicon-based film manufacturing method using the plasma CVD apparatus according to the tenth aspect of the present invention includes a vacuum vessel equipped with an exhaust system, a source gas supply source and a dilution gas supply source for diluting the source gas, An electrically non-grounded parallel plate type first electrode and substrate having a gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel, and gas ejection holes for ejecting the source gas and the dilution gas A pair of electrodes composed of parallel plate-type second electrodes on which are mounted, and a high-frequency power supply system that supplies high-frequency power to the pair of electrodes, and a film is formed on a substrate installed in the vacuum vessel A method of manufacturing a silicon-based film using a plasma CVD apparatus for forming
The gas ejection holes are composed of a plurality of source gas ejection holes (5b, 5c) for ejecting only the source gas and a plurality of dilution gas ejection holes (7a) for ejecting only the dilution gas, The dilution gas ejection holes are arranged at spatially different positions (8b, 8c, 8d, 8e, 8f) (6b, 6c, 6d, 6e), and the source gas ejection holes are arranged in the direction of ejection of the source gas. Is arranged in a direction other than the normal direction of the surface of the second electrode (5b, 5c) to promote contact between the source gas and the dilution gas and to mix the source gas and the dilution gas. It is characterized by promoting it.

A silicon-based film manufacturing method using the plasma CVD apparatus according to the eleventh aspect of the present invention includes a vacuum vessel provided with an exhaust system, a source gas supply source, and a dilution gas supply source for diluting the source gas, An electrically non-grounded parallel plate type first electrode and substrate having a gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel, and gas ejection holes for ejecting the source gas and the dilution gas A pair of electrodes composed of parallel plate-type second electrodes on which are mounted, and a high-frequency power supply system that supplies high-frequency power to the pair of electrodes, and a film is formed on a substrate installed in the vacuum vessel A method of manufacturing a silicon-based film using a plasma CVD apparatus for forming
The gas ejection holes are composed of a plurality of source gas ejection holes (5b, 5c) for ejecting only the source gas and a plurality of dilution gas ejection holes (7a) for ejecting only the dilution gas, The dilution gas ejection holes are arranged at spatially different positions (8b, 8c, 8d, 8e, 8f) (6b, 6c, 6d, 6e), and the source gas ejection holes (5b, 5c) are adjacent to each other. The angle between the respective jet directions of the two matching source gas jet holes (5b, 5c) is set in the range of 1 to 80 degrees to promote the contact between the source gas and the dilution gas, It is characterized in that mixing of the dilution gas is promoted.

  A silicon-based film manufacturing method using a plasma CVD apparatus according to a twelfth aspect of the present invention uses the plasma CVD apparatus according to any one of the first to eighth aspects of the present invention to manufacture a silicon-based film. A microcrystalline silicon film is manufactured using a source gas containing at least a silane gas (10a) and a dilution gas containing at least a hydrogen gas (10b).

According to the present invention, as the gas ejection holes installed in one of the pair of parallel plate electrodes, the source gas ejection holes and the dilution gas ejection holes are arranged at spatially different positions, and the source gas ejection holes and the dilution gas are diluted. Since the plasma CVD apparatus can be realized so that the distance between the gas ejection hole and the substrate surface is different, and the injection direction of the source gas and the injection direction of the dilution gas intersect, the source gas and the dilution gas can be realized. It is possible to promote the contact and mixing of the source gas and the dilution gas after being plasmatized in a spatially separated form and then plasmatized. As a result, the plasma conversion of the SiH ₄ gas and the plasma conversion of the H ₂ gas are performed spatially separated, and the contact and mixing of the plasma SiH ₄ gas and the plasma H ₂ gas can be promoted. A large amount of H and a large amount of SiH ₃ necessary for forming a quality film are generated (SiH ₄ → H + SiH ₃ , H ₂ → H + H), and SiH ₂ which is a poor film forming factor disappears (SiH ₂ + H ₂ → SiH ₄ ). Is possible. As a result, high-quality and high-speed film formation of a silicon-based film, which is considered difficult with conventional apparatuses and methods, is possible.
Therefore, improvement of throughput in manufacturing plants for microcrystalline Si films, which are power generation films for thin film solar cells, passivation films for polycrystalline silicon solar cells, and insulating thin films (silicon nitride films, silicon oxide films, etc.) of thin film transistors for liquid crystal displays Has the effect of becoming possible.
In particular, the effect of contributing to the improvement of productivity and the reduction of manufacturing cost in the production of high-speed, high-quality silicon-based films targeting large-area substrates in a tandem-type thin film solar cell production factory is remarkably large.

FIG. 1 is a schematic explanatory view showing the structure of a plasma CVD apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic conceptual diagram of a pair of electrodes used in the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 3 is a schematic structural diagram (sectional view taken along line C1-C1 in FIG. 2) showing a gas introduction path used in the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 4 is a schematic plan view (plan view seen from the substrate side) showing the first electrode used in the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 5 is a sectional view taken along line A1-A1 of FIG. 6 is a cross-sectional view taken along line A2-A2 of FIG. 7 is a cross-sectional view taken along line A3-A3 of FIG. FIG. 8 is an explanatory diagram of typical data when a plasma generation experiment of silane gas is performed by the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 9 is an explanatory diagram of typical data when performing a plasma generation experiment of hydrogen gas by the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 10 is an explanatory diagram of typical data when performing a plasma generation experiment using silane gas and hydrogen gas by the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 11 is a schematic plan view (plan view seen from the substrate side) showing the first electrode 2 used in the plasma CVD apparatus according to the second embodiment of the present invention. 12 is a cross-sectional view taken along line B2-B2 of FIG. FIG. 13 is a schematic explanatory view of the source gas ejection holes 5b and 5c. FIG. 14 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the third embodiment of the present invention. FIG. 15 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the fourth embodiment of the present invention. FIG. 16 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the fifth embodiment of the present invention. FIG. 17 is a schematic plan view (plan view seen from the substrate side) showing the first electrode 2 used in the plasma CVD apparatus according to the sixth embodiment of the present invention. 18 is a cross-sectional view taken along line F1-F1 of FIG. FIG. 19 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the seventh embodiment of the present invention. FIG. 20 is a schematic explanatory view of a conventional plasma CVD apparatus.

  The best mode for carrying out the present invention will be described below with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same member, and the overlapping description is abbreviate | omitted. In the following description of the embodiments, a plasma CVD apparatus and an apparatus and method for manufacturing an i-type microcrystalline semiconductor layer for solar cells are described as an example of a silicon film manufacturing method using the plasma CVD apparatus. However, the subject matter of the present application is not limited to the following examples.

Example 1
First, a plasma CVD apparatus according to the first embodiment of the present invention and a silicon-based film manufacturing method using the plasma CVD apparatus will be described with reference to FIGS.
FIG. 1 is a schematic explanatory view showing the structure of a plasma CVD apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic conceptual diagram of a pair of electrodes used in the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 3 is a schematic structural diagram (sectional view taken along line C1-C1 in FIG. 2) showing a gas introduction path used in the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 4 is a schematic plan view (plan view seen from the substrate side) showing the first electrode used in the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 5 is a sectional view taken along line A1-A1 of FIG. 6 is a cross-sectional view taken along line A2-A2 of FIG. 7 is a cross-sectional view taken along line A3-A3 of FIG. FIG. 8 is an explanatory diagram of typical data when a plasma generation experiment of silane gas is performed by the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 9 is an explanatory diagram of typical data when performing a plasma generation experiment of hydrogen gas by the plasma CVD apparatus according to the first embodiment of the present invention. FIG. 10 is an explanatory diagram of typical data when performing a plasma generation experiment using silane gas and hydrogen gas by the plasma CVD apparatus according to the first embodiment of the present invention.

First, the overall configuration of the apparatus will be described with reference to FIGS. 2 to 7, the coordinates (X, Y, Z) shown in the drawings are referred to for convenience of explanation.
Reference numeral 1 is a vacuum volume. The vacuum vessel 1 is provided with a pair of electrodes for converting a source gas and a dilution gas, which will be described later, into plasma, that is, a non-grounded first electrode 2 and a grounded second electrode 3 containing a substrate heater (not shown). ing.
Reference numeral 2 denotes a first electrode, which is fixed to the vacuum vessel 1 via an insulating support means 4. As shown in FIG. 2, the first electrode 2 has a rectangular shape, and the material is a metal such as aluminum, an aluminum-based alloy, or SUS, for example, aluminum. The size is, for example, an external dimension of length 1.2 mx width 1.2 mx height 8 cm. In addition, the pipe which lets the refrigerant | coolant which is not shown in figure is incorporated, and it is possible to control the temperature of the 1st electrode 2. FIG.
As will be described later, a concave / convex shape including a concave portion 8a and a convex portion 6a is provided on the surface of the first electrode 2 on the substrate side. Gas ejection holes 5a are arranged.
Reference numeral 3 denotes a second electrode, which incorporates a substrate heater (not shown), and the temperature of the substrate 9 placed thereon can be set to an arbitrary temperature within a range of 100 to 350 ° C. In addition to the substrate heater, the second electrode 3 has a built-in pipe through which a coolant passes, and the temperature of the substrate 9 can be controlled. As shown in FIGS. 1 and 2, the second electrode 3 is a rectangular flat plate, and the material thereof is a metal, and is disposed to face the first electrode 2 in parallel. The specific size is, for example, an external dimension of length about 1.3 mx width about 1.3 mx height about 8 cm.
Reference numeral 4 is a support means for the first electrode 2, which fixes the first electrode 2 to the vacuum vessel 1. The material is an insulator (for example, high-purity ceramic). The support means 4 electrically insulates the first electrode 2, the first gas header 13 a connected to the first electrode 2, and the first gas introduction pipe 12 a from the vacuum vessel 1. In addition, a second gas header 13 b and a second gas introduction pipe 12 b described later are electrically insulated from the vacuum vessel 1.
Reference numeral 9 is a substrate. The substrate 9 is installed on the second electrode 3 and taken out by a substrate loading / unloading device (not shown).

  The interval between the first and second electrodes 2 and 3 can be arbitrarily set in advance by operating a substrate lifter (not shown) up and down, and is set to, for example, 10 mm within a range of 5 mm to 50 mm.

Reference numeral 10a denotes a source gas supply source, and silane gas SiH ₄ is supplied to a first gas supply pipe 11a, a first insulating vacuum flange 14a, a first gas introduction pipe 12a, and a first gas header 13a described later. Then, the gas is supplied between the first and second electrodes 2 and 3 through the first cave-type gas introduction path 15a and the source gas ejection hole 5a. The amount of the gas is controlled by a flow meter attached to the source gas supply source 10a.
The source gas supply source 10a can adjust the pressure of the source gas supplied to the first gas supply pipe 11a in the range of about 1 to 10 kg / cm ² . Here, for example, it is set to 3.5 kg / cm ² . The flow rate of the source gas is set in the range of 0.5 to 10 SLM (gas flow rate in terms of standard state: L / min).
Reference numeral 11a denotes a first gas supply pipe which supplies silane gas SiH ₄ supplied from the source gas supply source 10a to the first gas introduction pipe 12a through the first insulating vacuum flange 14a.
Reference numeral 14a is a first insulating vacuum flange, which connects the source gas supply pipe 11a and the first gas introduction pipe 12a to ensure airtightness. Electrically, the insulating property is high, and the first electrode 2 and the first gas header 13 a and the first gas introduction pipe 12 a connected to the first electrode 2 are electrically connected to the vacuum vessel 1. Insulate. Further, the second gas header 13 b and the second gas introduction pipe 12 b are electrically insulated from the vacuum vessel 1.
Reference numeral 12a denotes a first gas introduction pipe, which supplies the silane gas SiH ₄ supplied from the first gas supply pipe 11a through the first insulating vacuum flange 14a to the first gas header 13a.
Reference numeral 13a denotes a first gas header, which supplies the silane gas SiH ₄ supplied from the first gas introduction pipe 12a to the first cave-type gas introduction path 15a. 2 and 3 (a cross-sectional view taken along line C1-C1 in FIG. 2), the first gas header 13a maintains airtightness on one side surface of the first electrode 2. It is fixed. Moreover, it is connected to a plurality of first cave-type gas introduction paths 15a.
Reference numeral 15a denotes a first cave-type gas introduction path for supplying the source gas supplied from the first gas header 13a between the first and second electrodes 2 and 3 through the source gas ejection hole 5a. The first cave-type gas introduction path 15a is processed and set to a diameter of 1 mm to 35 mm, for example, a diameter of 6 mm, using a deep hole processing machine (for example, a gun drilling machine).

Reference numeral 8 a is a recess provided on the surface of the first electrode 2 on the second electrode 3 side. As shown in FIG. 4, the recess 8a is a lattice-like groove extending in the X direction and the Y direction, and the depth H1 of the groove is about 3 to 15 mm, for example, 6 mm. And the width | variety of the recessed part 8a has W1 in the direction extended in the X-axis direction, and has W2 in the direction extended in the Y-axis direction. The widths W1 and W2 are about 6 mm to 15 mm, for example, W1 = 6 mm and W2 = 6 mm. The recesses 8a arranged in a lattice shape are manufactured by processing with, for example, a milling machine or a planer.
Reference numeral 6 a is a convex portion provided on the surface of the first electrode 2 on the second electrode 3 side. As shown in FIG. 4, the convex portion 6a is surrounded by a lattice-shaped concave portion 8a. The width of the convex portion 6a has W3 in the X-axis direction and W4 in the Y direction. The widths W3 and W4 are about 6 mm to 20 mm, for example, W3 = 6 mm and W4 = 6 mm. The convex portion 6a height H2 is about 3 to 15 mm, for example, 6 mm.
When the size of the electrode is, for example, 1206 mm × 1206 mm, and the width of the lattice-shaped concave portion 8a is, for example, W1 = 6 mm, W2 = 6 mm, the convex portion 6a has W3 = 6 mm, W4 = 6 mm, and a height H2 = 6 mm. It is. In addition, the number of the lattice-shaped recesses 8a is 100 rows in the X direction and 100 rows in the Y direction, for a total of 100 rows x 100 rows.

Reference numeral 5a denotes a raw material gas ejection hole having a diameter of about 0.4 to 1.0 mm, for example, a diameter of about 0.5 mm. Here, a plurality of protrusions 6a of the first electrode 2 in the Y-axis direction (the depth direction of the first cave-type gas introduction path 15a) in FIG. For example, it is installed at 12 mm intervals.
This source gas ejection hole 5 a ejects the silane gas SiH ₄ supplied from the first cave-type gas introduction path 15 a between the first and second electrodes 2 and 3. The ejected source gas is discharged from the exhaust pipes 16a and 16b to the outside of the vacuum vessel 1 by a vacuum pump (not shown).
A number 7a is a dilution gas ejection hole, and a large number is set with a diameter of about 0.4 to 1.0 mm, for example, a diameter of about 0.5 mm. Here, in the recess 8a of the first electrode 2, a plurality of second cave-type gas introduction passages 15b in the depth direction (Y-axis direction) are in the range of 5 mm to 20 mm at substantially equal intervals, for example, 6 mm intervals. Installed. The dilution gas ejection hole 7 a ejects the hydrogen gas H ₂ supplied from the second cave-type gas introduction path 15 b between the first and second electrodes 2 and 3. The jetted dilution gas is discharged from the exhaust pipes 16a and 16b to the outside of the vacuum vessel 1 by a vacuum pump (not shown).

Since the source gas ejection hole 5a is disposed in the convex portion 6a of the first electrode 2 and the dilution gas ejection hole 7a is disposed in the recess 8a of the first electrode 2, the source gas ejection hole 5a and the second electrode 3 are disposed. The distance between the surfaces is shorter than the distance between the dilution gas ejection holes 7 a and the surface of the second electrode 3. Due to this difference in distance, the plasma generation process between the pair of electrodes 2 and 3 has the following effects.
In other words, the time during which the source gas ejected from the source gas ejection hole 5a is exposed to the plasma is shorter than the time during which the dilution gas ejected from the dilution gas ejection hole 7a is exposed to the plasma. As a result, the condition that excessive plasma decomposition and dissociation of the SiH ₄ gas does not occur.
Further, the time during which the diluted gas ejected from the ejection hole 7a is exposed to the plasma is longer than the time during which the source gas ejected from the source gas ejection hole 5a is exposed to the plasma. As a result, the conditions that the reaction of H ₂ → H + H (generates a large amount of atomic H) and the reaction of H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ) occur.

The pressure in the vacuum vessel 1 is monitored by a pressure gauge (not shown), and is automatically adjusted and set to a predetermined value by a pressure adjustment valve (not shown). Here, when the source gas is in the range of flow rate 0.5 to 2.0 SLM and the dilution gas is in the range of 0.5 to 8 SLM, the pressure is adjusted to about 1.333 Pa (0.01 Torr) to 1333 Pa (10 Torr). it can.
In addition, when there are no source gas and dilution gas, the vacuum ultimate pressure of the vacuum vessel 1 is about 2.66-3.99E-5 Pa (2-3E-7 Torr).

Reference numeral 10b is a dilution gas supply source, the hydrogen gas _{H 2,} the second gas supply pipe 11b will be described later, the second insulating vacuum flange 14b, a second gas introducing pipe 12b, the second gas header 13b, and supplied between the first and second electrodes 2 and 3 via the second cave-type gas introduction path 15b and the dilution gas ejection hole 7a. The amount of the gas is controlled by a flow meter attached to the dilution gas supply source 10b.
The dilution gas supply source 10b can adjust the pressure of the source gas supplied to the second gas supply pipe 11b in the range of about 1 to 10 kg / cm ² . Here, for example, it is set to 3.5 kg / cm ² . The flow rate of the dilution gas is set in the range of 0.5 to 30 SLM (gas flow rate in terms of standard state: L / min).
Numbering 11b in the second gas supply pipe, for supplying the hydrogen gas H ₂ supplied from the dilution gas supply source 10b to the second gas inlet pipe 12b via the second insulating vacuum flange 14b.
Reference numeral 14b is a second insulating vacuum flange, which connects the second gas supply pipe 11b and the second gas introduction pipe 12b to ensure airtightness. Electrically, the insulating property is high, and the first electrode 2, the second gas header 13 b and the second gas introduction pipe 12 b connected to the first electrode 2 are electrically connected to the vacuum vessel 1. Insulate. Further, the first gas header 13 a and the first gas introduction pipe 12 a are electrically insulated from the vacuum vessel 1.
The numbering 12b in the second gas introducing pipe, for supplying the hydrogen gas H ₂ supplied through the second insulating vacuum flange 14b from the second gas supply pipe 11b to the second gas header 13b.
Numbering 13b in the second gas header, supplying a hydrogen gas H ₂ supplied from the second gas introduction pipe 12b to the second cave-type gas introducing passage 15b.
Reference numeral 15b denotes a second cave-type gas introduction path, which supplies hydrogen gas supplied from the second gas header 13b between the first and second electrodes 2 and 3 via the dilution gas ejection hole 7a. The second cave-type gas introduction path 15b is processed and set to a diameter of 1 mm to 35 mm, for example, a diameter of 6 mm, using a deep hole processing machine (for example, a gun drilling machine).

Here, the structural relationship and the operational relationship of the source gas ejection hole 5a and the dilution gas ejection hole 7a, and the recess 8a and the projection 6a will be described.
In FIG. 7, the source gas is supplied from the first gas introduction path 15 a installed in the first electrode 2 to the source gas ejection hole 5 a, and is ejected from the hole 5 a as the source gas jet 17. The source gas ejection hole 5a has a diameter of about 0.4 to 0.8 mm and a depth of about 3 mm to 10 mm, for example, a diameter of 0.5 mm and a depth of 3 mm.
The total amount of gas ejected from the plurality of source gas ejection holes 5a is controlled by a flow meter attached to the source gas supply source 10a.
The amount of gas discharged from each of the plurality of individual source gas ejection holes 5a is such that the gas pressure in the first cave-type gas introduction path 15a is about 3 Kg / cm ² or more, and the source gas ejection holes 5a It is generally known that when the hole diameter is about 0.4 to 0.8 mm and the hole depth is about 3 mm to 10 mm, there is no difference between the individual holes and the value is almost constant. Yes. Further, it is generally known that the state of dispersion of the ejected gas is almost the same with no difference between individual holes.

In FIG. 7, the dilution gas is supplied from a second gas introduction path 15 b installed in the first electrode 2 to the dilution gas ejection hole 7 a, and is ejected as a dilution gas jet 18 from the hole 7 a. The dilution gas ejection hole 7a has a diameter of about 0.4 to 0.8 mm and a depth of about 3 mm to 10 mm, for example, a diameter of 0.5 mm and a depth of 9 mm.
The total amount of gas ejected from the plurality of dilution gas ejection holes 7a is controlled by a flow meter attached to the dilution gas supply source 10b.
A plurality of individual dilution gas injection holes 7a have an injection gas amount of about 3 kg / cm ² or more of the gas pressure in the second cave-type gas introduction path 15b and the dilution gas injection holes 7a. It is generally known that when the hole diameter is about 0.4 to 0.8 mm and the hole depth is about 3 mm to 10 mm, there is no difference between the individual holes and the value is almost constant. Yes. Further, it is generally known that the state of dispersion of the ejected gas is almost the same with no difference between individual holes.

The raw material gas jet 17 and dilution gas jet 18 shown in FIG. 7 will be described.
In the raw material gas jet 17, the gas pressure between the pair of electrodes 2 and 3 is in the range of about 1.333 Pa (0.01 Torr) to 1333 Pa (10 Torr), and the diameter of the raw material gas ejection hole 5 a is 0.4 to 0.4. If the depth is about 0.8 mm and the depth is about 3 mm to 10 mm, it is generally known that the distance from the convex portion 6a is dispersed at about 5 mm to 10 mm, and the spread is spread over an area of about 10 to 20 mm in diameter. It has been.
On the other hand, in the dilution gas jet 18, the gas pressure between the pair of electrodes 2 and 3 is in the range of about 1.333 Pa (0.01 Torr) to 1333 Pa (10 Torr), and the diameter of the dilution gas ejection hole 7a is 0.00. If the depth is about 4 to 0.8 mm and the depth is about 3 mm to 10 mm, the distance from the bottom surface of the recess 8a is dispersed at about 5 mm to 10 mm, and the spread is spread to an area of about 10 to 20 mm in diameter. Generally known.
Therefore, the raw material gas jet 17 and the dilution gas jet 18 are overlapped, contacted and mixed with each other at a distance of about 10 mm in the normal direction of the substrate from the upper surface of the convex portion 6a. Here, the space where the gas mixing occurs is referred to as a mixing region 19.
When electric power is supplied to the first and second electrodes 2 and 3 from a power supply system, which will be described later, the raw material gas jet 17 and the dilution gas jet 18 are converted into plasma immediately after the jetting, and the plasmaized raw material gas is supplied. And the dilution gas are mixed in the mixing region 19.
When the raw material gas and the dilution gas are turned into plasma, various radicals that are chemically active and electrically neutral are generated in addition to various positive ions and negative ions. In this case, electrically neutral radicals such as SiH ₃ , SiH ₂ , SiH, and H move from the mixed region 19 to the substrate surface by a diffusion phenomenon, and are deposited on the surface of the substrate.
Among the supplied source gas and dilution gas, the electrically neutral gas in the residual gas that has not been converted into plasma flows between the first electrode 2 and the substrate 9 toward the periphery and is discharged.

Reference numeral 20 is a transmitter. The transmitter 20 generates a sine wave voltage signal having an arbitrary frequency of 10 to 100 MHz.
Reference numeral 21 denotes a power amplifier. When the output signal of the transmitter 20 is input, the power is amplified and, for example, 10 KW is output in the range of 1 to 20 KW.
Reference numeral 22 is an impedance matching unit. When the impedance matching unit 22 supplies power to the first and second electrodes 2 and 3 via a coaxial cable 23b, a current introduction terminal 24, a power supply conductor 25 and a feeding point 26, which will be described later, The impedance of the plasma generated between the electrodes 2 and 3 is matched with the impedance of the power amplifier 21.
Reference numerals 23a and 23b are coaxial cables, and can flow high-frequency power.
Reference numeral 24 denotes a current introduction terminal, which maintains the airtightness of the vacuum vessel 1 and connects the coaxial cable 23 b and the power supply conductor 25.
Reference numeral 25 denotes a power supply conductor, which connects the current introduction terminal 24 and the feeding point 26 to transmit high-frequency power.
Reference numeral 26 denotes a feeding point, which is a position for feeding the output power of the power amplifier 21 that is transmitted through the power supply conductor 25. When the output power of the power amplifier 21 is fed to the feeding point 26, plasma is generated between the pair of electrodes 2 and 3.

Here, the function of the power amplifier 21 will be supplementarily described.
The power amplifier 21 is attached with an output value (traveling wave) monitor (not shown) and a reflected wave monitor reflected back from the downstream side. Further, an isolator for protecting the electric circuit of the power amplifier 21 by the reflected wave is attached. An output value (traveling wave) monitor and a reflected wave monitor reflected from the downstream side are used as follows.
First, for example, the output of about 20 to 30% of the maximum output of the power amplifier 21 is supplied to the first and 2 to the two electrodes 2 and 3.
Next, the reactance (L and C) of the impedance matching unit 22 is adjusted while monitoring the traveling wave Pf and the reflected wave Pr attached to the power amplifier 21. While adjusting the reactances (L and C) of the impedance matching unit 22, a condition for selecting the minimum value of the reflected wave Pr is selected. Then, the output of the power amplifier 21 is set to a required numerical value, and the condition that the reflected wave Pr becomes the minimum value is selected while adjusting the reactance (L and C) of the impedance matching device 22 again with the output.
It should be noted that the adjustment of the matching unit, that is, the operation for setting the condition for the reflected wave Pr to be the minimum value, requires little time because the change in plasma impedance is small unless the plasma generation condition is changed. do not do.

Next, a method for forming an i-type microcrystalline silicon film for an integrated tandem thin film solar cell using the plasma CVD apparatus described above, that is, the plasma CVD apparatus having the configuration shown in FIGS. To do.
When forming the i-type microcrystalline silicon film, the source gas, dilution gas, pressure, power to be applied, and the like are referred to known film forming conditions.
However, specific conditions relating to the plasma CVD apparatus having the above-described configuration must be confirmed and adjusted in advance by the following procedure. Thereafter, a target i-type microcrystalline silicon film is formed.

In (Step 1), in the plasma CVD apparatus having the configuration shown in FIG. 1 to FIG.
In (Step 2), in the plasma CVD apparatus having the configuration shown in FIGS. 1 to 7, a preliminary plasma generation experiment is performed using only the dilution gas, for example, only hydrogen gas.
In (Step 3), in the plasma CVD apparatus having the configuration shown in FIGS. 1 to 7, the source gas is ejected from the source gas ejection hole and the dilution gas is ejected from the dilution gas ejection hole. Hydrogen gas is spouted and a target i-type microcrystalline silicon film is formed.
In (Step 4), the desired high-quality i-type microcrystalline silicon film is manufactured with reference to the results of (Step 1) to (Step 3).

(Step 1)
In FIG. 1 to FIG. 7, a substrate 9 is previously placed on the second electrode 3, a vacuum pump (not shown) is operated to remove air, impurity gas, and the like in the vacuum vessel 1, and then a source gas supply source 10a through the first gas supply pipe 11a, the first insulating vacuum flange 14a, the first gas introduction pipe 12a, the first gas header 13a, and the first cave-type gas introduction path 15a The pressure is maintained at 533.2 Pa (4 Torr) while supplying SiH4 gas from 5a in the range of 0.5 to 10 SLM (gas flow rate in standard state: L / min), for example, 2 SLM. The substrate temperature is maintained in the range of 100 to 350 ° C., for example, 220 ° C.
The size of the substrate 9 is 1 mx length 1 m (thickness 4 mm) according to the size of the first electrode 2.
Next, the frequency of the transmitter 20 is set to 13.56 MHz, the output of the power amplifier 21 is set to 3 kW, for example, and the feeding point 26 is passed through the impedance matching unit 22, the coaxial cable 23b, the current introduction terminal 24, and the power supply conductor 26. To supply.
In this case, the reflected wave of the supplied power can be prevented from returning to the upstream side of the matching unit 22 by adjusting the impedance matching unit 22. Generally, the reflected wave can be suppressed to about 1 to 3% of the traveling wave.

When plasma is generated for about 4 to 6 minutes under the above conditions, an amorphous silicon film is deposited on the substrate 9. After film formation, the substrate 9 is taken out from the vacuum vessel 1 and the thickness distribution of the amorphous silicon film is evaluated. The film thickness distribution of the amorphous silicon film deposited on the substrate 9 is a sinusoidal distribution. That is, the film thickness distribution of the formed silicon-based thin film is roughly expressed by the following equation.
I (x) = cos ² (2πx / λ)
Where I (x) is the thickness of the film, x is the distance from the center of the substrate to the peripheral direction, and λ is the wavelength of the power used (wavelength in the plasma).
Such a film forming experiment is performed using the flow rate of the raw material gas and the supplied power as parameters, and the relationship between the film forming speed, the flow rate of the raw material gas, and the supplied power is grasped.
In this case, for example, data as shown in FIG. 8 is acquired. In FIG. 8, the vertical axis represents the film forming speed (nm / s), and the horizontal axis represents the supplied power (KW).
FIG. 8 shows that the film-forming speed increases in proportion to the supplied power in the raw gas supply amounts 2LSM, 4LSM, and 6LSM, but when the supplied power exceeds a certain value, it becomes a constant value. Thus, the saturation of the film forming speed at a certain value indicates that the film forming speed depends on the supply amount of the source gas.
In the data of FIG. 8, the maximum value of the film formation rate is 2.3 nm / s, 3.2 nm / s, and 4.5 nm / s when the flow rate of the source gas is 2LSM, 4LSM, and 6LSM, respectively. .
In addition, the relationship between the supplied power value and the maximum value of the film forming rate is 2.3 nm / s, 7 at 6.5 kW (0.451 W / cm ² ), respectively, at the flow rates of the raw material gases 2LSM, 4LSM, and 6LSM. 3.2 nm / s at at (0.507W / cm ²⁾ .3KW, and a 4.5 m / s at 8.5KW (0.590W / cm ^2).
From the above results, when the gas supplied to the vacuum vessel 1 is only silane gas, the raw material gas supply amount is 2 LSM, the supply power value is 6.5 KW (0.451 W / cm ² ) or more, and the film formation speed is 2.3 nm. / S, with a raw material gas supply rate of 4 LSM, with a supply power value of 7.3 KW (0.507 W / cm ² ) or more, a film formation rate of 3.2 nm / s, with a raw material gas supply amount of 6 LSM, a supply power value of 8.5 KW (0 590 W / cm ² ) or more, it can be seen that the film forming speed is 4.5 nm / s.
In the film formation data, powder (particles) may be generated when the supplied power is about 6 KW or more.

(Step 2)
1 to 7, a substrate 9 is previously placed on the second electrode 3, a vacuum pump (not shown) is operated to remove air, impurity gas, and the like in the vacuum vessel 1, and then a dilution gas supply source 10b through the second gas supply pipe 11b, the second insulating vacuum flange 14b, the second gas introduction pipe 12b, the second gas header 13b, and the second cave-type gas introduction path 15b, the dilution gas injection hole Hydrogen gas is maintained at a pressure of 533.2 Pa (4 Torr) while supplying, for example, 4 SLM in the range of 0.5 to 30 SLM (gas flow rate in standard state: L / min) from 7a. The substrate temperature is maintained in the range of 100 to 350 ° C., for example, 220 ° C.
The size of the substrate 9 is 1 mx length 1 m (thickness 4 mm) according to the size of the first electrode 2.
Next, the frequency of the transmitter 20 is set to 13.56 MHz, the output of the power amplifier 21 is set to 3 kW, for example, and the feeding point 26 is passed through the impedance matching unit 22, the coaxial cable 23b, the current introduction terminal 24, and the power supply conductor 26. To supply.
In this case, the reflected wave of the supplied power can be prevented from returning to the upstream side of the matching unit 22 by adjusting the impedance matching unit 22. Generally, the reflected wave can be suppressed to about 1 to 3% of the traveling wave.

Under the above conditions, plasma is generated for about 10 to 20 minutes. In this case, the shape of the recess 8a provided in the first electrode 2 is a lattice-shaped groove as shown in FIGS. 4 to 7, and the width and depth thereof are 6 mm, respectively. Therefore, it is conceivable that high-density plasma is generated by hollow cathode discharge depending on the pressure conditions during plasma generation. Then, using an emission spectrum measuring instrument and a measurement probe (not shown), paying attention to the wavelength of 486 nm of the hydrogen plasma emission spectrum, the intensity is measured and evaluated. The spectral wavelength of 486 nm is a typical wavelength in hydrogen plasma emission generally called Hβ rays.
In such an emission spectrum measurement experiment, the pressure is kept constant at 533.2 Pa (4 Torr), the flow rate of hydrogen gas is kept at 4 SLM, the power is changed, and the relationship between the emission intensity at a wavelength of 486 nm and the supplied power is grasped.
In this case, for example, data as shown in FIG. 9 is acquired. In FIG. 9, the vertical axis represents the emission intensity at a wavelength of 486 nm (normalized by the maximum value), and the horizontal axis represents the supplied power (KW).
FIG. 9 shows that the emission intensity at a wavelength of 486 nm increases in proportion to the supplied power at a hydrogen gas supply amount of 4 LSM. If such data is obtained, it is considered that no abnormal discharge occurs.

(Step 3)
In FIG. 1 to FIG. 7, a substrate 9 is previously placed on the second electrode 3, a vacuum pump (not shown) is operated to remove air, impurity gas, and the like in the vacuum vessel 1, and then a source gas supply source 10a through the first gas supply pipe 11a, the first insulating vacuum flange 14a, the first gas introduction pipe 12a, the first gas header 13a, and the first cave-type gas introduction path 15a The pressure is maintained at 533.2 Pa (4 Torr) while supplying SiH 4 gas from 5a in the range of 0.5 to 10 SLM (gas flow rate in standard state: L / min), for example, 4 SLM.
Further, the second gas supply pipe 11b, the second insulating vacuum flange 14b, the second gas introduction pipe 12b, the second gas header 13b, and the second cave-type gas introduction path 15b are provided from the dilution gas supply source 10b. The hydrogen gas is supplied from the dilution gas injection hole 7a through a range of 0.5 to 30 SLM (gas flow rate in terms of standard state: L / min), for example, while 20 SLM is supplied and the pressure is maintained at 533.2 Pa (4 Torr). To do.
The substrate temperature is maintained in the range of 100 to 350 ° C., for example, 220 ° C.
The size of the substrate 9 is 1 mx length 1 m (thickness 4 mm) according to the size of the first electrode 2.
Next, the frequency of the transmitter 20 is set to 13.56 MHz, the output of the power amplifier 21 is set to 3 kW, for example, and the feeding point 26 is passed through the impedance matching unit 22, the coaxial cable 23b, the current introduction terminal 24, and the power supply conductor 26. To supply.
In this case, the reflected wave of the supplied power can be prevented from returning to the upstream side of the matching unit 22 by adjusting the impedance matching unit 22. Generally, the reflected wave can be suppressed to about 1 to 3% of the traveling wave.
In addition, since it is difficult to measure the presence or absence of generation | occurrence | production of powder (particle) during plasma production, it is not implemented here. In order to suppress the generation of powder (particles), the supplied power is set to a power density of about 0.7 W / cm ² or less. Further, the ratio of the silane gas supply amount and the hydrogen gas supply amount is set to 5 times to suppress the generation of powder.

When plasma is generated for about 10 to 20 minutes under the above conditions, an i-type microcrystalline silicon film is deposited on the substrate 9. Note that since a large amount of hydrogen gas is supplied, the obtained film is not amorphous Si but a microcrystalline film.
After film formation, the substrate 9 is taken out from the vacuum vessel 1 and the film thickness distribution and crystallization rate of the i-type microcrystalline silicon film are evaluated.
The i-type microcrystalline silicon film deposited on the substrate 9 has a sine distribution. That is, the film thickness distribution of the formed silicon-based thin film is roughly expressed by the following equation.
I (x) = cos ² (2πx / λ)
Where I (x) is the thickness of the film, x is the distance from the center of the substrate to the peripheral direction, and λ is the wavelength of the power used (wavelength in the plasma).
For the evaluation of the crystallization rate, a Raman spectrum analyzer was used, and the crystalline Si peak (517 cm ⁻¹ ) Ic and the amorphous Si peak (470 to 480 cm ⁻¹ ) Ia in the film were used, and the crystallization rate (%) = 100 × Ic / (Ia + Ic).
Such a film forming experiment is performed using the flow rates of the source gas and hydrogen gas and the supplied power as parameters, and the relationship between the film forming speed, the flow rate of the source gas, hydrogen gas and the supplied power is grasped.
In this case, for example, data as shown in FIG. 10 is acquired. In FIG. 10, the vertical axis represents the film forming speed (nm / s), and the horizontal axis represents the supplied power (KW).
FIG. 10 shows that when the silane gas supply amount is 4 LSM and the hydrogen gas supply amount is 20 SLM, and when the silane gas supply amount is 6 LSM and the hydrogen gas supply amount is 30 SLM, the film forming speed increases almost in proportion to the supply power. Exceeding a certain value indicates a tendency to saturate.
Further, in the data of FIG. 10, the maximum value of the film forming speed, that is, the film forming speed at the supply power of 10 kW (0.694 W / cm ² ) is the case where the silane gas supply amount is 4 LSM and the hydrogen gas supply amount is 20 SLM. In the case of a supply amount of 6 LSM and a hydrogen gas supply amount of 30 SLM, they are about 3.2 nm / s and 4.1 nm / s, respectively. The crystallization rate is about 60 to 80%, respectively.

The features relating to the method using the plasma CVD apparatus according to the first embodiment of the present invention are as follows.
A method of manufacturing a silicon-based film using the plasma CVD apparatus shown in FIGS. 1 to 7, wherein a microcrystalline silicon film is manufactured using a source gas containing at least a silane gas and a dilution gas containing at least a hydrogen gas It is characterized by doing.

By the way, in the said experiment, since the conditions shown below are satisfy | filled, it is judged that there is almost no generation | occurrence | production of powder.
● Condition 1: The condition for generating a high concentration of H atoms is satisfied. In the above experiment, since a large amount of hydrogen gas is supplied and plasma is generated using the plasma CVD apparatus having the following first to sixth characteristics, a large amount of atomic hydrogen H is likely to be generated. That is, the reaction of H ₂ → H + H is likely to occur as the main reaction. Note that it is generally said that when a large amount of atomic H is generated (an increase in H atom concentration), a microcrystalline silicon film can be easily formed.
(Features of apparatus configuration of plasma CVD apparatus according to first embodiment of the present invention)
The first feature is that uneven portions 8 a and 6 a are provided on the surface of the first electrode 2.
The second feature is that the concave portion 8a has a shape like a lattice-like groove.
The third feature is that the dilution gas ejection hole 7a is provided in the recess 8a, and the source gas ejection hole 5a is provided in the projection 6a. Thereby, the raw material gas ejection holes 5a are arranged at a position closer to the surface of the second electrode than the dilution gas ejection holes 7a. Due to this difference in distance, the plasma generation process between the pair of electrodes 2 and 3 has the following effects.
In other words, the time during which the source gas ejected from the source gas ejection hole 5a is exposed to the plasma is shorter than the time during which the dilution gas ejected from the dilution gas ejection hole 7a is exposed to the plasma. As a result, the condition that excessive plasma decomposition and dissociation of the SiH ₄ gas does not occur.
Further, the time during which the diluted gas ejected from the ejection hole 7a is exposed to the plasma is longer than the time during which the source gas ejected from the source gas ejection hole 5a is exposed to the plasma. As a result, the conditions that the reaction of H ₂ → H + H (generates a large amount of atomic H) and the reaction of H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ) occur.
The fourth feature is that the supply source of the source gas and the dilution gas is installed independently, and the supply path of the source gas to the vacuum vessel 1 is the first gas supply pipe 11a and the first insulating vacuum flange 14a. The first gas introduction pipe 12a, the first gas header 13a, the first cave-type gas introduction path 15a, and the raw material gas ejection hole 5a, and the supply path of the dilution gas to the vacuum vessel 1 are: The second gas supply pipe 11b, the second insulating vacuum flange 14b, the second gas introduction pipe 12b, the second gas header 13b, the second cave-type gas introduction path 15b, and the dilution gas ejection hole 7a. That. Further, when the source gas is jetted between the first and second electrodes 2 and 3, at least a first gas header 13 a disposed on the side surface of the first electrode 2 and the first electrode 2. The first cave-type gas introduction path 15a disposed inside the substrate and the source gas ejection hole 5a disposed on the surface of the first electrode are used, and the dilution gas is used as the first and second electrodes 2. 3, at least the second gas header 13 b disposed on the side surface of the first electrode 2 and the second cave-type gas introduction path 15 b disposed inside the first electrode 2. And the dilution gas ejection hole 7a arrange | positioned on the surface of the 1st electrode is used, It is characterized by the above-mentioned.
A fifth feature is that the first and second gas headers 13a and 13b are in a positional relationship in which the first electrode 2 faces each other and are disposed on the side surface of the first electrode 2.
A sixth feature is that the first and second cave-type gas introduction passages 15a and 15b are in a plane parallel to the surface of the first electrode 2 on the second electrode 3 side and are in a parallel relationship with each other. To be installed.
Condition 2: The condition for generating high-concentration SiH ₃ is satisfied. In the above experiment, since the silane gas is ejected from the source gas ejection hole 5a disposed nearer the second electrode surface than the dilution gas ejection hole 7a under the above condition 1, the time during which the silane gas is exposed to plasma. Is shorter than the time during which the diluted gas ejected from the diluted gas ejection hole 7a is exposed to the plasma. As a result, the condition that excessive plasma decomposition and dissociation of the SiH ₄ gas does not occur. Thereby, the reaction of SiH ₄ → H + SiH ₃ and H + SiH ₄ → H ₂ + SiH ₃ is likely to occur. Also,
Since a large amount of H ₂ gas is supplied and plasma is generated, a large amount of H radicals are likely to be generated. That is, the reaction of H + SiH ₄ → H ₂ + SiH ₃ is likely to occur as a main reaction. Note that it is generally said that when the SiH ₃ concentration increases, a high-quality silicon-based film can be easily formed.
● Condition 3: The condition for reducing SiH ₂ radicals, which are the main factors for powder production, is satisfied. In the above experiment, since a large amount of hydrogen is supplied and turned into plasma, the concentration of excited H ₂ becomes high, and thus SiH ₂ is easily extinguished. That is, the reaction of SiH ₂ + H ₂ → SiH ₄ is likely to occur. When the SiH ₂ concentration decreases, dust (powder) such as disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ) and trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ H ₈ ) is hardly formed.

From the above results, when the supply amount of silane gas is 4 LSM, the supply amount of hydrogen gas is 20 SLM, and the supply power is 10 KW (0.694 W / cm ² ), the crystallization rate is about 3.2 to 80 nm at a film forming speed of about 3.2 nm / s. It can be seen that an i-type microcrystalline silicon film can be obtained.
In addition, when the supply amount of silane gas is 6 LSM, the supply amount of hydrogen gas is 30 SLM, and the supply power is 10 KW (0.694 W / cm ² ), the i-type fine is about 60 to 80% in crystallization rate at about 4.2 nm / s. It can be seen that a crystalline silicon film can be obtained.

(Step 4)
In actual application, referring to the results of (Step 1) to (Step 3) above, for example, as the film forming conditions, silane gas supply amount 6LSM, hydrogen gas supply amount 30SLM, supply power 10 kW (0.694 W / cm ² ) is selected, and the target i-type microcrystalline silicon film is manufactured. As a result, the intended high quality i-type microcrystalline silicon film is manufactured.

Here, the effect as a silicon-based film manufacturing method using the plasma CVD apparatus according to the first embodiment of the present invention will be considered.
As the gas ejection holes installed in one of the pair of parallel plate electrodes, the source gas ejection holes and the dilution gas are separated into the source gas ejection holes and the dilution gas ejection holes and at different spatial positions. Since it is possible to realize a plasma CVD apparatus arranged so that the distance between the ejection hole and the substrate surface is different, plasmaization in a form in which the source gas and the dilution gas are spatially separated, which was impossible with the conventional apparatus, It has an effect that it becomes possible to promote the contact and mixing of the source gas and the dilution gas after being plasmatized.
As a result, the plasma conversion of the SiH ₄ gas and the plasma conversion of the H ₂ gas are performed spatially separated, and the contact and mixing of the plasma SiH ₄ gas and the plasma H ₂ gas can be promoted. A large amount of H and a large amount of SiH ₃ necessary for forming a quality film are generated (SiH ₄ → H + SiH ₃ , H ₂ → H + H), and SiH ₂ which is a poor film forming factor disappears (SiH ₂ + H ₂ → SiH ₄ ). Is possible. As a result, high-quality and high-speed film formation of a silicon-based film, which is considered difficult with conventional apparatuses and methods, is possible.

The plasma CVD apparatus according to the first embodiment of the present invention has the following characteristics.
A vacuum vessel provided with an exhaust system, a source gas supply source and a dilution gas source source for diluting the source gas, a gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel, and the source gas And a pair of electrodes comprising a first electrode of an electrically non-grounded parallel plate type having a gas ejection hole for ejecting the dilution gas and a second electrode of a parallel plate type on which a substrate is placed, and the pair A high-frequency power supply system that supplies high-frequency power to the electrode, and a plasma CVD apparatus that forms a thin film on a substrate installed in the vacuum vessel, wherein the gas ejection holes are a plurality of the plurality of material gases that eject only the source gas It is composed of a source gas ejection hole and a plurality of dilution gas ejection holes for ejecting only the dilution gas, and the source gas ejection hole and the dilution gas ejection hole are arranged at spatially different positions. And
As a result, it is possible to form a high-quality silicon film that is considered difficult in the conventional apparatus method.

In a method using a conventional apparatus, when a film is formed by converting a mixed gas of silane gas and hydrogen gas into a plasma under high pressure conditions, the supply power is increased, that is, the electron temperature of plasma is increased (9.47 eV or more). When high-density plasma is generated (by generating electrons with the energy of), radicals such as SiH ₃ , SiH ₂ , SiH, Si, and H radicals are generated by the high-density plasma of the mixed gas of silane gas and hydrogen gas. It occurs in large quantities and the conditions for high-speed film formation are met. However, the condition covers not only the vicinity of the substrate surface and the substrate surface but also the entire film formation chamber. As a result, the reaction between the generated radicals occurs in a reaction space that is longer than necessary in a reaction space that is longer than necessary, and as a side effect, a reaction that deteriorates the film quality occurs. Therefore, in addition to the following reactions (a) to (d) necessary for forming a high-quality film, reactions (e) and (f) relating to SiH ₂ forming a poor film strongly occur.

(Reaction required for the formation of high-quality films)
(A) SiH ₄ → H + SiH ₃ (A large amount of H and a large amount of SiH ₃ are generated by collision of electrons having an energy of 8.75 ev or more and 9.47 eV or less): Formation of a high-quality silicon-based film by increasing the SiH ₃ concentration The condition that makes this possible easily is established.
(B) H ₂ → H + H (generates a large amount of atomic H): The condition that the microcrystalline silicon film can be easily formed by increasing the H atom concentration is established.
(C) H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ): The condition that a high-quality silicon-based film can be easily formed by increasing the SiH ₃ concentration is established.
(D) SiH ₂ + H ₂ → SiH ₄ (disappears a large amount of SiH ₂ ): Disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ) and trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ ) due to the decrease in SiH ₂ concentration. Conditions for removing dust (powder) formation factors such as H ₈ ) are established.
(Reaction to form a poor film)
(E) SiH ₄ → H ₂ + SiH ₂ (a large amount of SiH ₂ is generated by collision of electrons having an energy of 9.47 eV or more): the concentration of SiH ₂ radicals increases, and disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ), the condition that powder made of trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ H ₈ ), tetrasilane (SiH ₂ + Si ₃ H ₈ → Si ₄ H ₁₀ ), etc. is formed.
(F) SiH ₄ → H + H + SiH ₂ (produces a large amount of SiH ₂ ): The concentration of SiH ₂ radicals increases, and disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ), trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ H) ₈ ) and tetrasilane (SiH ₂ + Si ₃ H ₈ → Si ₄ H ₁₀ ) are formed.
The conventional apparatus mainly has problems due to the reactions (e) and (f) described above, and a high-quality film cannot be formed at high speed.

On the other hand, in the present embodiment, since the source gas and the dilution gas can be ejected from the source gas ejection hole 5a and the dilution gas ejection hole 7a, respectively, and can be converted into plasma in separate spaces immediately after ejection, H, SiH _A large amount of radicals that contribute to the formation of high-quality films such as ₃ radicals and excited H ₂ can be generated. The generation reaction of SiH ₂ radicals, which is a main factor that deteriorates the quality of the film, is greatly suppressed compared to the generation of radicals that contribute to the formation of high quality films such as H, SiH ₃ radicals, and excited H _2. .
In addition, since the H ₂ gas supplied in large quantities is mixed with silane gas plasma in the mixing region after being converted to plasma, the reactions (a) to (d) are more likely to occur than in the conventional apparatus. As a result, a silicon-based film can be formed while suppressing the generation of SiH ₂ .

(Example 2)
A plasma CVD apparatus according to the second embodiment of the present invention and a silicon-based film manufacturing method using the plasma CVD apparatus will be described with reference to FIGS. Reference is also made to FIGS.

  FIG. 11 is a schematic plan view (plan view seen from the substrate side) showing the first electrode 2 used in the plasma CVD apparatus according to the second embodiment of the present invention. 12 is a cross-sectional view taken along line B2-B2 of FIG. FIG. 13 is a schematic explanatory view of the source gas ejection holes 5b and 5c.

First, the configuration of the apparatus will be described with reference to FIGS. 11 and 12, for convenience of explanation, the coordinates (X, Y, Z) shown in the drawings are referred to as in the explanation of the plasma CVD apparatus according to the first embodiment of the present invention described above. .
In the plasma CVD apparatus according to the second embodiment of the present invention, the pattern of the concavo-convex portion installed in the first electrode 2 used in the plasma CVD apparatus according to the first embodiment of the present invention described above is a lattice. The shape is changed to a slit shape.

  Reference numeral 8b is a slit-like recess provided in the first electrode 2, and a plurality of reference numerals 8b are provided. The cross-sectional shape of the recess 8b is rectangular. The recess 8b is a groove extending in the Y direction in FIG. 11, and the depth H1 of the groove is about 3 to 15 mm, for example, 6 mm. And the width | variety of the recessed part 8b is W2. The width W2 is about 6 mm to 15 mm, for example, W2 = 6 mm. In addition, when the size of the electrode is, for example, 1206 mm × 1206 mm, the width of the slit-shaped concave portion 8b is, for example, W2 = 6 mm, and the width W4 of the convex portion 6b described later is W4 = 6 mm, the number is 100 rows in the X direction. . Further, the recess 8b arranged in the slit shape is manufactured by processing with a milling machine or a planer, for example.

Reference numeral 7a is a dilution gas ejection hole, and is provided on the bottom surface of the recess 8b in the range of 5 mm to 20 mm in the Y-axis direction in FIG. 11 at approximately equal intervals, for example, 6 mm intervals. The dilution gas ejection hole 7 a ejects the hydrogen gas H ₂ supplied from the second cave-type gas introduction path 15 b between the first and second electrodes 2 and 3.
The jetted dilution gas is discharged from the exhaust pipes 16a and 16b to the outside of the vacuum vessel 1 by a vacuum pump (not shown).

The dilution gas ejection hole 7a is disposed in the recess 8b of the first electrode 2 and the later-described source gases 5b and 5c are disposed in the projection 6b of the first electrode 2a. The distance between the surfaces of the two electrodes 3 is shorter than the distance between the dilution gas ejection holes 7 and the surface of the second electrode 3. Due to this difference in distance, the plasma generation process between the pair of electrodes 2 has the following effects.
In other words, the time during which the source gas ejected from the source gas ejection holes 5b and 5c is exposed to the plasma is shorter than the time during which the dilution gas ejected from the dilution gas ejection hole 7a is exposed to the plasma. As a result, the condition that excessive plasma decomposition and dissociation of the SiH ₄ gas does not occur.
Further, the time during which the diluted gas ejected from the ejection hole 7a is exposed to the plasma is longer than the time during which the source gas ejected from the source gas ejection holes 5b, 5c is exposed to the plasma. As a result, the conditions that the reaction of H ₂ → H + H (generates a large amount of atomic H) and the reaction of H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ) occur.

The number 6b is a convex portion provided on the surface of the first electrode 2a on the second electrode 3 side. The convex portion 6b is sandwiched between slit-shaped concave portions 8b. The width of the convex portion 6b is W4. The width W4 is about 6 mm to 15 mm, for example, W4 = 6 mm. The convex portion 6b height H2 is about 3 to 15 mm, for example, 6 mm.
When the size of the electrode is, for example, 1206 mm × 1206 mm, the width W2 of the concave portion 8b = 6 mm, and the convex portion 6bW4 = 6 mm, the number of the convex portions 6b is 101 rows in the X direction.

Reference numerals 5b and 5c are raw material gas ejection holes provided on the convex portion 6b of the first electrode 2, and a large number are set in the X direction. In addition, as shown in FIG. 11, a plurality of, for example two, source gas ejection holes 5b and 5c are installed in the vicinity of the dilution gas ejection hole 7a on the upper surface of the belt-like convex portion 6b. When viewed in the Y direction, the plurality of sets of source gas ejection holes 5b and 5c are installed at substantially equal intervals in the range of 5 mm to 20 mm, for example, at 12 mm intervals, as shown in FIG.
The ejected source gas is discharged from the exhaust pipes 16a and 16b to the outside of the vacuum vessel 1 by a vacuum pump (not shown).
Further, as shown in FIGS. 12 and 13, the source gas ejection holes 5b and 5c have an angle between the ejection direction of the source gas ejection holes 5b and the ejection direction of the source gas ejection holes 5c on the upper surface of the convex portion 6b. It is installed to become. This angle θ is an angle between the ejection direction of the source gas ejection holes 5b and the ejection direction of the source gas ejection holes 5c.
The specific value of the angle θ depends on the distance between the pair of electrodes 2a and 3, but is set in the range of 1 to 80 degrees. For example, FIG. 13 shows a case where the angle θ = 20 degrees. In this case, as shown in FIG. 13, if the distance between the pair of electrodes 2 and 3 is 10 mm, the point P1 where the center line of the source gas ejection hole 5b intersects the surface of the second electrode 3 and the source gas ejection The distance from the point P2 where the center line of the hole 5c intersects the surface of the second electrode 3 is approximately 3.6 mm.
That is, since the source gas ejection holes 5b and 5c are installed with an angle θ, the source gas ejected from the source gas ejection holes 5b and 5c is the second electrode 3 and the diluted gas ejected from the dilution gas ejection hole 7a It contacts in the form of extruding in the direction parallel to the surface. As a result, mixing of the source gas and the dilution gas is promoted.
In this case, the strength of contact between the source gas and the dilution gas or the strength of mixing depends on the angle θ. Of course, it also depends on the pressure between the first and second electrodes 2a, 3.

When the source gas ejection holes 5b and 5c are installed on the upper surface of the convex portion 6b with an angle θ, in addition to the action caused by the difference in position between the source gas ejection holes 5b and 5c and the dilution gas ejection hole 7a. The action of the angle θ of the source gas ejection holes 5b and 5c occurs.
That is, the source gas and the dilution gas are respectively ejected from the source gas ejection holes 5b and 5c and the dilution gas ejection hole 7a that are installed at different positions from the surface of the second electrode 3, and after the ejection, While making it plasma in a separate space, the source gas and the dilution gas are brought into contact with each other in the vicinity of a position where the depth H1 of the recess is separated, thereby promoting the mixing of the two. As a result, a large amount of radicals that contribute to the formation of high quality films such as H, SiH ₃ radicals, and excited H ₂ are generated.
That is, since the source gas ejected from the source gas ejection holes 5b and 5c contacts the dilution gas ejected from the dilution gas ejection hole 7a in a direction parallel to the surface of the second electrode 3, the source gas is diluted with the source gas. Promotes gas mixing. This promotion of mixing of the source gas and the dilution gas has the effect of promoting the following reactions (b) to (d).
That is, as a result of promoting the mixing of the raw material gas and the dilution gas, the following reaction becomes remarkable as compared with the conventional apparatus.
(B) H ₂ → H + H (generates a large amount of atomic H): The condition that the microcrystalline silicon film can be easily formed by increasing the H atom concentration is established.
(C) H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ): The condition that a high-quality silicon-based film can be easily formed by increasing the SiH ₃ concentration is established.
(D) SiH ₂ + H ₂ → SiH ₄ (disappears a large amount of SiH ₂ ): Disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ) and trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ ) due to the decrease in SiH ₂ concentration. Conditions for removing dust (powder) formation factors such as H ₈ ) are established.

Next, a method for forming an i-type microcrystalline silicon film for an integrated tandem-type thin film solar cell using a plasma CVD apparatus using the first electrode 2 shown in FIG. 11 will be described.
When forming the i-type microcrystalline silicon film, the source gas, dilution gas, pressure, power to be applied, and the like are referred to known film forming conditions.
However, specific conditions relating to the plasma CVD apparatus having the above-described configuration must be confirmed and adjusted in advance by the following procedure. Thereafter, a target i-type microcrystalline silicon film is formed.

In (Step 1), in the plasma CVD apparatus having the configuration shown in FIGS. 1 to 3 and FIGS. 11 to 13, a preliminary plasma generation experiment is performed using only the source gas, for example, only silane gas.
In (Step 2), in the plasma CVD apparatus having the configuration shown in FIGS. 1 to 3 and FIGS. 11 to 13, a preliminary plasma generation experiment is performed using only the dilution gas, for example, only hydrogen gas.
In (Step 3), in the plasma CVD apparatus having the configuration shown in FIGS. 1 to 3 and FIGS. 11 to 13, the source gas is ejected from the source gas ejection holes and the dilution gas is ejected from the dilution gas ejection holes. Thus, for example, a silane gas and a hydrogen gas are respectively ejected, and a target i-type microcrystalline silicon film is formed.
In (Step 4), the desired high-quality i-type microcrystalline silicon film is manufactured with reference to the results of (Step 1) to (Step 3).

(Step 1)
1-3 and FIGS. 11-13, the board | substrate 9 was previously installed on the 2nd electrode 3, the vacuum pump which is not shown in figure was operated, and air, impurity gas, etc. in the vacuum vessel 1 were removed. Thereafter, from the source gas supply source 10a, the first gas supply pipe 11a, the first insulating vacuum flange 14a, the first gas introduction pipe 12a, the first gas header 13a, and the first cave-type gas introduction path 15a are connected. For example, SiH4 gas is supplied from the raw material gas injection holes 5b and 5c in the range of 0.5 to 10 SLM (gas flow rate in terms of standard state: L / min), for example, while supplying 2 SLM, the pressure is 533.2 Pa (4 Torr ). The substrate temperature is maintained in the range of 100 to 350 ° C., for example, 220 ° C.
The size of the substrate 9 is 1 mx length 1 m (thickness 4 mm) according to the size of the first electrode 2.
Next, the frequency of the transmitter 20 is set to 13.56 MHz, the output of the power amplifier 21 is set to 3 kW, for example, and the feeding point 26 is passed through the impedance matching unit 22, the coaxial cable 23b, the current introduction terminal 24, and the power supply conductor 26. To supply.
In this case, the reflected wave of the supplied power can be prevented from returning to the upstream side of the matching unit 22 by adjusting the impedance matching unit 22. Generally, the reflected wave can be suppressed to about 1 to 3% of the traveling wave.

When plasma is generated for about 4 to 6 minutes under the above conditions, an amorphous silicon film is deposited on the substrate 9. After film formation, the substrate 9 is taken out from the vacuum vessel 1 and the thickness distribution of the amorphous silicon film is evaluated. The film thickness distribution of the amorphous silicon film deposited on the substrate 9 is a sinusoidal distribution. That is, the film thickness distribution of the formed silicon-based thin film is roughly expressed by the following equation.
I (x) = cos ² (2πx / λ)
Where I (x) is the thickness of the film, x is the distance from the center of the substrate to the peripheral direction, and λ is the wavelength of the power used (wavelength in the plasma).
Such a film forming experiment is performed using the flow rate of the raw material gas and the supplied power as parameters, and the relationship between the film forming speed, the flow rate of the raw material gas, and the supplied power is grasped.
In this case, for example, data as shown in FIG. 8 is acquired. In FIG. 8, the vertical axis represents the film forming speed (nm / s), and the horizontal axis represents the supplied power (KW).
FIG. 8 shows that the film-forming speed increases in proportion to the supplied power in the raw gas supply amounts 2LSM, 4LSM, and 6LSM, but when the supplied power exceeds a certain value, it becomes a constant value. Thus, the saturation of the film forming speed at a certain value indicates that the film forming speed depends on the supply amount of the source gas.
In the data of FIG. 8, the maximum value of the film formation rate is 2.3 nm / s, 3.2 nm / s, and 4.5 nm / s when the flow rate of the source gas is 2LSM, 4LSM, and 6LSM, respectively. .
Further, the relationship between the supplied power value and the maximum value of the film forming speed is 2.3 nm / s, 7 at 6.5 kW (0.451 W / cm ² ), respectively, at the flow rates of the raw material gases 2LSM, 4LSM, and 6LSM. 3.2 nm / s at at (0.507W / cm ²⁾ .3KW, and a 4.5 nm / s in 8.5KW (0.590W / cm ^2).
From the above results, when the gas supplied to the vacuum vessel 1 is only silane gas, the raw material gas supply amount is 2 LSM, the supply power value is 6.5 KW (0.451 W / cm ² ) or more, and the film formation speed is 2.3 nm. / S, with a raw material gas supply rate of 4 LSM, with a supply power value of 7.3 KW (0.507 W / cm ² ) or more, a film formation rate of 3.2 nm / s, with a raw material gas supply amount of 6 LSM, a supply power value of 8.5 KW (0 590 W / cm ² ) or more, it can be seen that the film forming speed is 4.5 nm / s.
In the film formation data, powder (particles) may be generated when the supplied power is about 6 KW or more.

(Step 2)
1-3 and FIGS. 11-13, the board | substrate 9 was previously installed on the 2nd electrode 3, the vacuum pump which is not shown in figure was operated, and the air, impurity gas, etc. in the vacuum vessel 1 were removed. Thereafter, the second gas supply pipe 11b, the second insulating vacuum flange 14b, the second gas introduction pipe 12b, the second gas header 13b, and the second cave-type gas introduction path 15b are supplied from the dilution gas supply source 10b. For example, hydrogen gas is supplied from the dilution gas injection hole 7a in the range of 0.5 to 30 SLM (gas flow rate in standard state: L / min), for example, while 4 SLM is supplied, and the pressure is maintained at 533.2 Pa (4 Torr). To do. The substrate temperature is maintained in the range of 100 to 350 ° C., for example, 220 ° C.
The size of the substrate 9 is 1 mx length 1 m (thickness 4 mm) according to the size of the first electrode 2.
Next, the frequency of the transmitter 20 is set to 13.56 MHz, the output of the power amplifier 21 is set to 3 kW, for example, and the feeding point 26 is passed through the impedance matching unit 22, the coaxial cable 23b, the current introduction terminal 24, and the power supply conductor 26. To supply.
In this case, the reflected wave of the supplied power can be prevented from returning to the upstream side of the matching unit 22 by adjusting the impedance matching unit 22. Generally, the reflected wave can be suppressed to about 1 to 3% of the traveling wave.

Under the above conditions, plasma is generated for about 10 to 20 minutes. In this case, the shape of the recess 8b provided in the first electrode 2 is a slit-like groove as shown in FIGS. 11 to 13, and the width and depth thereof are 6 mm, respectively. Therefore, it is conceivable that high-density plasma is generated by hollow cathode discharge depending on the pressure conditions during plasma generation. Then, using an emission spectrum measuring instrument and a measurement probe (not shown), paying attention to the wavelength of 486 nm of the hydrogen plasma emission spectrum, the intensity is measured and evaluated. The spectral wavelength of 486 nm is a typical wavelength in hydrogen plasma emission generally called Hβ rays.
In such an emission spectrum measurement experiment, the pressure is kept constant at 533.2 Pa (4 Torr), the flow rate of hydrogen gas is kept at 4 SLM, the power is changed, and the relationship between the emission intensity at a wavelength of 486 nm and the supplied power is grasped.
In this case, for example, data as shown in FIG. 9 is acquired. In FIG. 9, the vertical axis represents the emission intensity at a wavelength of 486 nm (normalized by the maximum value), and the horizontal axis represents the supplied power (KW).
FIG. 9 shows that the emission intensity at a wavelength of 486 nm increases in proportion to the supplied power at a hydrogen gas supply amount of 4 LSM. If such data is obtained, it is considered that no abnormal discharge occurs.

(Step 3)
1-3 and FIGS. 11-13, the board | substrate 9 was previously installed on the 2nd electrode 3, the vacuum pump which is not shown in figure was operated, and the air, impurity gas, etc. in the vacuum vessel 1 were removed. Thereafter, from the source gas supply source 10a, the first gas supply pipe 11a, the first insulating vacuum flange 14a, the first gas introduction pipe 12a, the first gas header 13a, and the first cave-type gas introduction path 15a are connected. For example, SiH4 gas is supplied from the raw material gas injection holes 5b and 5c in the range of 0.5 to 10 SLM (gas flow rate in terms of standard state: L / min), for example, while supplying 4 SLM, the pressure is 533.2 Pa (4 Torr ).
Further, the second gas supply pipe 11b, the second insulating vacuum flange 14b, the second gas introduction pipe 12b, the second gas header 13b, and the second cave-type gas introduction path 15b are provided from the dilution gas supply source 10b. The hydrogen gas is supplied from the dilution gas injection hole 7a through a range of 0.5 to 30 SLM (gas flow rate in terms of standard state: L / min), for example, while 20 SLM is supplied and the pressure is maintained at 533.2 Pa (4 Torr). To do.
The substrate temperature is maintained in the range of 100 to 350 ° C., for example, 220 ° C.
The size of the substrate 9 is 1 mx length 1 m (thickness 4 mm) according to the size of the first electrode 2.
Next, the frequency of the transmitter 20 is set to 13.56 MHz, the output of the power amplifier 21 is set to 3 kW, for example, and the feeding point 26 is passed through the impedance matching unit 22, the coaxial cable 23b, the current introduction terminal 24, and the power supply conductor 26. To supply.
In this case, the reflected wave of the supplied power can be prevented from returning to the upstream side of the matching unit 22 by adjusting the impedance matching unit 22. Generally, the reflected wave can be suppressed to about 1 to 3% of the traveling wave.
In addition, since it is difficult to measure the presence or absence of generation | occurrence | production of powder (particle) during plasma production, it is not implemented here. In order to suppress the generation of powder (particles), the supplied power is set to a power density of about 0.7 W / cm ² or less. Further, the ratio of the silane gas supply amount and the hydrogen gas supply amount is set to 5 times to suppress the generation of powder.

When plasma is generated for about 10 to 20 minutes under the above conditions, an i-type microcrystalline silicon film is deposited on the substrate 9. Note that since a large amount of hydrogen gas is supplied, the obtained film is not amorphous Si but a microcrystalline film.
After film formation, the substrate 9 is taken out from the vacuum vessel 1 and the film thickness distribution and crystallization rate of the i-type microcrystalline silicon film are evaluated.
The i-type microcrystalline silicon film deposited on the substrate 9 has a sine distribution. That is, the film thickness distribution of the formed silicon-based thin film is roughly expressed by the following equation.
I (x) = cos ² (2πx / λ)
Where I (x) is the thickness of the film, x is the distance from the center of the substrate to the peripheral direction, and λ is the wavelength of the power used (wavelength in the plasma).
For the evaluation of the crystallization rate, a Raman spectrum analyzer was used, and the crystalline Si peak (517 cm ⁻¹ ) Ic and the amorphous Si peak (470 to 480 cm ⁻¹ ) Ia in the film were used, and the crystallization rate (%) = 100 × Ic / (Ia + Ic).
Such a film forming experiment is performed using the flow rates of the source gas and hydrogen gas and the supplied power as parameters, and the relationship between the film forming speed, the flow rate of the source gas, hydrogen gas and the supplied power is grasped.
In this case, for example, data as shown in FIG. 10 is acquired. In FIG. 10, the vertical axis represents the film forming speed (nm / s), and the horizontal axis represents the supplied power (KW).
FIG. 10 shows that when the silane gas supply amount is 4 LSM and the hydrogen gas supply amount is 20 SLM, and when the silane gas supply amount is 6 LSM and the hydrogen gas supply amount is 30 SLM, the film forming speed increases almost in proportion to the supply power. Exceeding a certain value indicates a tendency to saturate.
In addition, in the data of FIG. 10, the maximum value of the film forming speed, that is, the film forming speed at the supply power of 10 kW (0.694 W / cm ² ) In the case of a supply amount of 6 LSM and a hydrogen gas supply amount of 30 SLM, they are 3.2 nm / s and 4.1 nm / s, respectively. The crystallization rate is about 60 to 80%, respectively.

The features relating to the method using the plasma CVD apparatus according to the second embodiment of the present invention are as follows.
As shown in FIGS. 11 to 13, the dilute gas ejection holes 7 a are arranged in the slit-shaped recess 8 b, and the source gas ejection holes 5 b and 5 c whose gas ejection directions are different by the angle θ are arranged in the projection 6 b. A method of manufacturing a silicon-based film using a plasma CVD apparatus provided with a first electrode 2, wherein a microcrystalline silicon film is manufactured using a source gas containing at least a silane gas and a diluting gas containing at least a hydrogen gas. It is characterized by.

By the way, in the said experiment, since the conditions shown below are satisfy | filled, it is judged that there is almost no generation | occurrence | production of powder.
● Condition 1: The condition for generating a high concentration of H atoms is satisfied. In the above experiment, since a large amount of hydrogen gas is supplied and plasma is generated using the plasma CVD apparatus having the following first to sixth characteristics, a large amount of atomic hydrogen H is likely to be generated. That is, the reaction of H ₂ → H + H is likely to occur. Note that it is generally said that when a large amount of atomic H is generated (an increase in H atom concentration), a microcrystalline silicon film can be easily formed.
(Characteristics of the apparatus configuration of the plasma CVD apparatus according to the second embodiment of the present invention)
The first feature is that uneven portions 8 b and 6 b are provided on the surface of the first electrode 2.
The second feature is that the concave portion 8b has a shape like a slit-like groove.
A third feature is that the dilution gas ejection hole 7a is provided in the recess 8b, and the source gas ejection holes 5b and 5c are provided in the projection 6b with an angle θ. Thereby, the source gas ejection holes 5b and 5c are arranged at a position closer to the second electrode surface than the dilution gas ejection hole 7a, and the mixing of the source gas and the dilution gas can be promoted. In addition to the difference in distance, the generation of plasma between the pair of electrodes 2 and 3 due to the jet of the source gas having different ejection directions, that is, the ejection of the source gas from the two source gas ejection holes 5b and 5c having the angle θ. The process has the following effects:
In other words, the time during which the source gas ejected from the source gas ejection holes 5b and 5c is exposed to the plasma is shorter than the time during which the dilution gas ejected from the dilution gas ejection hole 7a is exposed to the plasma. As a result, the condition that excessive plasma decomposition and dissociation of the SiH ₄ gas does not occur.
Further, the time during which the diluted gas ejected from the ejection hole 7a is exposed to the plasma is longer than the time during which the source gas ejected from the source gas ejection holes 5b, 5c is exposed to the plasma. As a result, the conditions that the reaction of H ₂ → H + H (generates a large amount of atomic H) and the reaction of H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ) occur.
Furthermore, the condition that the contact and mixing of the source gas and the dilution gas are promoted by the source gas ejection from the source gas ejection holes 5a and 5b having the angle θ is established. That is, the source gas plasma and the dilution gas plasma are brought into contact and mixed in the vicinity of the substrate surface. As a result, the condition that the reaction of H + SiH ₄ → H ₂ + SiH ₃ (producing a large amount of H ₂ and a large amount of SiH ₃ ) occurs is established.
The fourth feature is that the supply source of the source gas and the dilution gas is installed independently, and the supply path of the source gas to the vacuum vessel 1 is the first gas supply pipe 11a, the first gas introduction pipe 14a, The first gas introduction pipe 12a, the first gas header 13a, the first cave-type gas introduction path 15a, and the source gas ejection holes 5b and 5c are configured, and the supply path of the dilution gas to the vacuum vessel 1 is The second gas supply pipe 11b, the second gas introduction pipe 14b, the second gas introduction pipe 12b, the first gas header 13b, the second cave-type gas introduction path 15b, and the source gas ejection hole 7a. That.
A fifth feature is that the first and second gas headers 13a and 13b are in a positional relationship in which the first electrode 2 faces each other and are disposed on the side surface of the first electrode 2.
A sixth feature is that the first and second cave-type gas introduction passages 15a and 15b are in a plane parallel to the surface of the first electrode 2 on the second electrode 3 side and are in a parallel relationship with each other. To be installed.
Condition 2: The condition for generating high-concentration SiH ₃ is satisfied. In the experiment, silane gas is exposed to the plasma because the silane gas is ejected from the source gas ejection holes 5b and 5c arranged near the second electrode surface from the dilution gas ejection hole 7a under the above condition 1. The time during which the dilution gas ejected from the dilution gas ejection hole 7a is exposed to plasma is shorter. As a result, the condition that excessive plasma decomposition and dissociation of the SiH ₄ gas does not occur. Thereby, the reaction of SiH ₄ → H + SiH ₃ and H + SiH ₄ → H ₂ + SiH ₃ is likely to occur.
Also, supplied from the diluent gas ejection holes 7a located in the recess 8b a large amount of H ₂ gas to produce only hydrogen plasma, then a large amount of H radicals and SiH ₃ radicals from be future and silane gas plasma is generated Cheap. That is, the reaction of H + SiH ₄ → H ₂ + SiH ₃ is likely to occur as a main reaction.
Note that it is generally said that when the SiH ₃ concentration increases, a high-quality silicon-based film can be easily formed.
● Condition 3: The condition for reducing SiH ₂ radicals, which are the main factors for powder production, is satisfied. In the above experiment, is supplied from the diluent gas holes 7a located in the recess 8b a large amount of H ₂ gas to produce only hydrogen plasma, then silane gas plasma and a large amount of H radicals and SiH ₃ radicals from be the future generation It's easy to do. In addition, since a large amount of hydrogen has been converted into plasma immediately after jetting, the concentration of excited H ₂ becomes high, and thus SiH ₂ is easily extinguished. That is, a reaction of SiH ₂ + H ₂ → SiH ₄ is likely to occur as a main reaction. When the SiH ₂ concentration decreases, dust (powder) such as disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ) and trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ H ₈ ) is hardly formed.

From the above results, when the supply amount of silane gas is 4 LSM, the supply amount of hydrogen gas is 20 SLM, and the supply power is 10 KW (0.694 W / cm ² ), the crystallization rate is about 3.2 to 80 nm at a film forming speed of about 3.2 nm / s. It can be seen that an i-type microcrystalline silicon film can be obtained.
In addition, when the supply amount of silane gas is 6 LSM, the supply amount of hydrogen gas is 30 SLM, and the supply power is 10 KW (0.694 W / cm ² ), the i-type fine is about 60 to 80% in crystallization rate at about 4.2 nm / s. It can be seen that a crystalline silicon film can be obtained.

(Step 4)
In actual application, referring to the results of (Step 1) to (Step 3) above, for example, as the film forming conditions, silane gas supply amount 6LSM, hydrogen gas supply amount 30SLM, supply power 10 kW (0.694 W / cm ² ) is selected, and the target i-type microcrystalline silicon film is manufactured. As a result, the intended high quality i-type microcrystalline silicon film is manufactured.

Here, the effect as a silicon-based film manufacturing method using the plasma CVD apparatus according to the first embodiment of the present invention will be considered.
As the gas ejection holes installed in one of the pair of parallel plate electrodes, the source gas ejection holes and the dilution gas are separated into the source gas ejection holes and the dilution gas ejection holes and at different spatial positions. Since it is possible to realize a plasma CVD apparatus arranged so that the distance between the ejection hole and the substrate surface is different, plasmaization in a form in which the source gas and the dilution gas are spatially separated, which was impossible with the conventional apparatus, It has an effect that it becomes possible to promote the contact and mixing of the source gas and the dilution gas after being plasmatized.
As a result, the plasma conversion of the SiH ₄ gas and the plasma conversion of the H ₂ gas are performed spatially separated, and the contact and mixing of the plasma SiH ₄ gas and the plasma H ₂ gas can be promoted. A large amount of H and a large amount of SiH ₃ necessary for forming a quality film are generated (SiH ₄ → H + SiH ₃ , H ₂ → H + H), and SiH ₂ which is a poor film forming factor disappears (SiH ₂ + H ₂ → SiH ₄ ). Is possible. As a result, high-quality and high-speed film formation of a silicon-based film, which is considered difficult with conventional apparatuses and methods, is possible.

The plasma CVD apparatus according to the first embodiment of the present invention has the following characteristics.
A vacuum vessel provided with an exhaust system, a source gas supply source and a dilution gas source source for diluting the source gas, a gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel, and the source gas And a pair of electrodes comprising a first electrode of an electrically non-grounded parallel plate type having a gas ejection hole for ejecting the dilution gas and a second electrode of a parallel plate type on which a substrate is placed, and the pair A high-frequency power supply system for supplying high-frequency power to an electrode, and in the plasma CVD apparatus for forming a thin film on a substrate installed in the vacuum vessel, the gas ejection holes are formed by using only the source gas. A plurality of source gas ejection holes arranged so that the ejection direction of the second electrode faces a direction other than the normal direction of the surface of the second electrode, and a plurality of dilution gas ejection holes for ejecting only the dilution gas, And the source gas ejection hole and the rare gas Characterized in that the gas ejection holes are arranged in spatially different positions.
As a result, it is possible to form a high-quality silicon film that is considered difficult in the conventional apparatus method.

In a method using a conventional apparatus, when a film is formed by converting a mixed gas of silane gas and hydrogen gas into a plasma under high pressure conditions, the supply power is increased, that is, the electron temperature of plasma is increased (9.47 eV or more). When high-density plasma is generated (by generating electrons with the energy of), radicals such as SiH ₃ , SiH ₂ , SiH, Si, and H radicals are generated by the high-density plasma of the mixed gas of silane gas and hydrogen gas. It occurs in large quantities and the conditions for high-speed film formation are met. However, the condition covers not only the vicinity of the substrate surface and the substrate surface but also the entire film formation chamber. As a result, the reaction between the generated radicals occurs in a reaction space that is longer than necessary in a reaction space that is longer than necessary, and as a side effect, a reaction that deteriorates the film quality occurs.
As a result, in addition to the following reactions (a) to (d) necessary for forming a high-quality film, reactions (e) and (f) relating to SiH ₂ forming a poor film strongly occur. Therefore, the conventional apparatus cannot produce a high-quality film at high speed.

(Reaction required for the formation of high-quality films)
(A) SiH ₄ → H + SiH ₃ (A large amount of H and a large amount of SiH ₃ are generated by collision of electrons having an energy of 8.75 ev or more and 9.47 eV or less): Formation of a high-quality silicon-based film by increasing the SiH ₃ concentration The condition that makes this possible easily is established.
(B) H ₂ → H + H (generates a large amount of atomic H): The condition that the microcrystalline silicon film can be easily formed by increasing the H atom concentration is established.
(C) H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ): The condition that a high-quality silicon-based film can be easily formed by increasing the SiH ₃ concentration is established.
(D) SiH ₂ + H ₂ → SiH ₄ (disappears a large amount of SiH ₂ ): Disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ) and trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ ) due to the decrease in SiH ₂ concentration. Conditions for removing dust (powder) formation factors such as H ₈ ) are established.
(Reaction to form a poor film)
(E) SiH ₄ → H ₂ + SiH ₂ (a large amount of SiH ₂ is generated by collision of electrons having an energy of 9.47 eV or more): the concentration of SiH ₂ radicals increases, and disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ), the condition that powder made of trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ H ₈ ), tetrasilane (SiH ₂ + Si ₃ H ₈ → Si ₄ H ₁₀ ), etc. is formed.
(F) SiH ₄ → H + H + SiH ₂ (produces a large amount of SiH ₂ ): The concentration of SiH ₂ radicals increases, and disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ), trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ H) ₈ ) and tetrasilane (SiH ₂ + Si ₃ H ₈ → Si ₄ H ₁₀ ) are formed.

On the other hand, in this embodiment, the source gas and the dilution gas are ejected from the source gas ejection holes 5b and 5c and the dilution gas ejection hole 7a, respectively, and the dilution gas is converted into plasma in the recesses so that the source gas is convex. Then, the raw material gas and the diluting gas, which are converted into plasma, are mixed in the vicinity of the substrate surface. That is, a large amount of hydrogen gas is turned into plasma in a space different from that of silane gas, and a large amount of radicals that contribute to the formation of high-quality films such as a large amount of H and SiH ₃ radicals and excited H ₂ can be generated. As a result, the generation of SiH ₂ radicals, which are the main factors that degrade film quality, is significantly suppressed compared to the generation of radicals that contribute to the formation of high quality films such as H, SiH ₃ radicals, and excited H _2. Is done.
In particular, in the plasma CVD apparatus according to the second embodiment of the present invention, since the injection direction of the source gas ejection holes 5b and 5c is directed to directions other than the normal direction of the second electrode 3, Since the contact and mixing of the raw material gas and the dilution gas are promoted and the reactions (b), (c), and (d) are likely to occur, a silicon-based film is formed in a form that suppresses the generation of SiH _2. Is possible.
As a result, it is possible to form a silicon-based film in a form that suppresses the generation of SiH ₂ compared to the conventional device.

(Example 3)
A plasma CVD apparatus and a silicon film manufacturing method using the plasma CVD apparatus according to the third embodiment of the present invention will be described with reference to FIG. Reference is also made to FIGS.
FIG. 14 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the second embodiment of the present invention.
The characteristics of the plasma CVD apparatus according to the third embodiment are characterized in that the cross-sectional shape of the recess 8b installed in the first electrode 2 is rectangular in the second embodiment, whereas the third embodiment is different from the third embodiment. In this case, the cross-sectional shape is a waveform.

Reference numeral 8 c is a recess provided on the surface of the first electrode 2 on the second electrode 3 side. The recess 8c is a groove having a corrugated cross-sectional shape extending in the Y direction, and the depth H1 of the groove is about 3 to 15 mm, for example, 6 mm. And the width | variety of the recessed part 8c has W2. The width W2 is about 6 mm to 15 mm, for example, W2 = 6 mm.
A dilution gas ejection hole 7a is provided in the recess 8c.
Further, the corrugated recess 8c is manufactured by processing with a milling machine or a planer, for example.

Reference numeral 6 c is a convex portion provided on the surface of the first electrode 2 on the second electrode 3 side. The convex portion 6c is sandwiched between the concave portions 8b. The width of the convex portion 6c is W4, which is the same as the width W2 of the concave portion 8c. The width W4 is about 6 mm to 15 mm, for example, W4 = 6 mm. The height H2 of the convex portion 6c is the same as the height H1 of the concave portion 8c.
When the size of the electrode is, for example, 1206 mm × 1206 mm, the width W2 of the concave portion 8c is 6 mm, and the width W4 of the convex portion 6c is 6 mm, the number of the convex portions 6c is 101 rows in the X direction.

Since the third embodiment is substantially the same as the second embodiment except for the above-described features, detailed description thereof is omitted.
In actual application, when the plasma CVD apparatus according to the second embodiment of the present invention is used, since the sectional shape of the recess 8b is rectangular and has an angle, abnormal discharge is induced depending on pressure conditions. Sometimes. On the other hand, when the plasma CVD apparatus according to the third embodiment of the present invention is used, the cross-sectional shape is corrugated, and since there are no corners, plasma generation is soft and suitable for forming a silicon-based film. ,Conceivable.

Example 4
A plasma CVD apparatus according to the fourth embodiment of the present invention and a silicon-based film manufacturing method using the plasma CVD apparatus will be described with reference to FIG. Reference is also made to FIGS.
FIG. 15 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the fourth embodiment of the present invention.
The characteristic of the apparatus configuration of the plasma CVD apparatus according to the fourth embodiment is that the cross-sectional shape of the recess 8b installed in the first electrode 2 in the above-described second embodiment is rectangular, whereas In this case, the cross-sectional shape is a trapezoid.

Reference numeral 8 d is a recess provided on the surface of the first electrode 2 on the second electrode 3 side. The recess 8d is a groove having a trapezoidal cross-sectional shape extending in the Y direction, and the depth H1 of the groove is about 3 to 15 mm, for example, 6 mm. The width of the recess 8d has W2. The width W2 is about 6 mm to 15 mm, for example, W2 = 6 mm.
A dilution gas ejection hole 7a is provided in the recess 8d.
Further, the trapezoidal concave portion 8d is manufactured by processing with, for example, a milling machine or a planer.

Reference numeral 6 d is a convex portion provided on the surface of the first electrode 2 on the second electrode 3 side. The convex portion 6d is sandwiched between the concave portions 8b. The width of the convex portion 6d is W4, which is the same as the width W2 of the concave portion 8d. The width W4 is about 6 mm to 15 mm, for example, W4 = 6 mm. The height H2 of the convex portion 6d is the same as the height H1 of the concave portion 8d.
For example, when the electrode size is 1206 mm × 1206 mm, the width W2 of the concave portion 8d is 6 mm, and the width W4 of the convex portion 6d is 6 mm, the number of the convex portions 6d is 101 rows in the X direction.

Since the fourth embodiment is substantially the same as the second embodiment except for the above-described features, detailed description thereof is omitted.
In actual application, when the plasma CVD apparatus according to the second embodiment of the present invention is used, since the sectional shape of the recess 8b is rectangular and has an angle, abnormal discharge is induced depending on pressure conditions. Sometimes. On the other hand, when the plasma CVD apparatus according to the fourth embodiment of the present invention is used, since the cross-sectional shape is trapezoidal, it similarly has corners. Therefore, abnormal discharge may be induced depending on pressure conditions.
Since the plasma CVD apparatus according to the fourth embodiment of the present invention has corners in the concavo-convex part, the electric field strength at the corners is increased and discharge easily occurs. Therefore, it is considered that it is suitable for applications under high pressure conditions where it is generally difficult to maintain stable discharge.

(Example 5)
A plasma CVD apparatus according to the fifth embodiment of the present invention and a silicon film manufacturing method using the plasma CVD apparatus will be described with reference to FIG. Reference is also made to FIGS.
FIG. 16 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the fifth embodiment of the present invention.
The feature of the apparatus configuration of the plasma CVD apparatus according to the fifth embodiment is that the cross-sectional shape of the concave portion 8b installed in the first electrode 2 in the second embodiment is rectangular, whereas In this case, the cross-sectional shape is a sawtooth shape.

Reference numeral 8 e is a recess provided on the surface of the first electrode 2 on the second electrode 3 side. This recess is a groove having a sawtooth cross-sectional shape extending in the Y direction, and the depth H1 of the groove is about 3 to 15 mm, for example, 6 mm. The width of the recess 8d has W2. The width W2 is about 6 mm to 15 mm, for example, W2 = 6 mm.
A dilution gas ejection hole 7a is provided in the recess 8e.
Further, the sawtooth-shaped recess 8e is manufactured by processing with a milling machine or a planer, for example.

Reference numeral 6 e is a convex portion provided on the surface of the first electrode 2 on the second electrode 3 side. The convex portion 6e is sandwiched between the concave portions 8e. The width of the convex portion 6e is W4, which is the same as the width W2 of the concave portion 8e. The width W4 is about 6 mm to 15 mm, for example, W4 = 6 mm. The height H2 of the convex portion 6e is the same as the height H1 of the concave portion 8d.
For example, when the electrode size is 1206 mm × 1206 mm, the width W2 of the concave portion 8e is 6 mm, and the width W4 of the convex portion 6e is 6 mm, the number of the convex portions 6e is 101 rows in the X direction.

Since the fifth embodiment is substantially the same as the second embodiment except for the above-described features, detailed description thereof is omitted.
In actual application, when the plasma CVD apparatus according to the second embodiment of the present invention is used, abnormal discharge may be induced depending on pressure conditions because the recess 8b has a rectangular cross-sectional shape. On the other hand, when the plasma CVD apparatus according to the fifth embodiment of the present invention is used, since the cross-sectional shape is a sawtooth shape, abnormal discharge is induced depending on pressure conditions in the same manner or more. There is.
The plasma CVD apparatus according to the fifth embodiment of the present invention has a feature that since the convex portion has a triangular corner, the electric field strength at the corner is increased, and discharge easily occurs. Therefore, it is considered that it is suitable for applications under high pressure conditions where it is generally difficult to maintain stable discharge.

(Example 6)
A plasma CVD apparatus and a silicon film manufacturing method using the plasma CVD apparatus according to the sixth embodiment of the present invention will be described with reference to FIGS. Reference is also made to FIGS.

  FIG. 17 is a schematic plan view (plan view seen from the substrate side) showing the first electrode 2 used in the plasma CVD apparatus according to the sixth embodiment of the present invention. 18 is a cross-sectional view taken along line F1-F1 of FIG.

The configuration of the apparatus will be described with reference to FIGS. 17 and 18. In FIGS. 17 and 18, for convenience of explanation, the coordinates (X, Y, Z) shown in the drawings are referred to as in the description of the plasma CVD apparatus according to the first embodiment of the present invention described above. .
In the plasma CVD apparatus according to the sixth embodiment of the present invention, the mold of the recesses installed in the first electrode 2 used in the plasma CVD apparatus according to the first embodiment of the present invention described above is a lattice shape. To a number of cylindrical shapes.

Reference numeral 8 f is a cylindrical recess provided in the first electrode 2. The recess 8f has a diameter of 2 to 20 mm, for example, 5 mm. Its depth is 3 to 20 mm, for example 5 mm.
A large number of the recesses 8f are installed. At the time of installation, the adjacent interval is 5 mm to 50 mm, for example, 20 mm.
Since the recess 8f has a shape that causes a generally known hollow cathode discharge, there is a high possibility of causing a hollow cathode discharge by combination with a diluting gas ejection hole 7a described later. Thereby, generation of a high-density plasma of the dilution gas is expected.

Reference numeral 7a denotes a dilution gas ejection hole, which is installed on the bottom surface of all the many recesses 8f. In FIGS. 17 and 18, one dilution gas ejection hole 7a is shown in one recess 8f, but a plurality of dilution gas ejection holes 7a may be provided.
The dilution gas ejection holes 7a, like the previous embodiments, for ejecting the hydrogen gas H ₂ supplied from the second cave-type gas inlet passage 15b between the first and second electrodes 2 and 3.
The jetted dilution gas is discharged from the exhaust pipes 16a and 16b to the outside of the vacuum vessel 1 by a vacuum pump (not shown).

The dilution gas ejection hole 7a is disposed in the recess 8f of the first electrode 2, and the later-described source gases 5b and 5c are disposed in the flat portion 6f of the first electrode 2a. The distance between the surfaces of the two electrodes 3 is shorter than the distance between the dilution gas ejection holes 7 a and the surface of the second electrode 3. Due to this difference in distance, the plasma generation process between the pair of electrodes 2 has the following effects.
In other words, the time during which the source gas ejected from the source gas ejection holes 5b and 5c is exposed to the plasma is shorter than the time during which the dilution gas ejected from the dilution gas ejection hole 7a is exposed to the plasma. As a result, the condition that excessive plasma decomposition and dissociation of the SiH ₄ gas does not occur.
Further, the time during which the diluted gas ejected from the ejection hole 7a is exposed to the plasma is longer than the time during which the source gas ejected from the source gas ejection holes 5b, 5c is exposed to the plasma. As a result, the conditions that the reaction of H ₂ → H + H (generates a large amount of atomic H) and the reaction of H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ) occur.

  Reference numeral 6f is a flat portion on the surface of the first electrode 2a on the second electrode 3 side. The flat portion 6f is a region other than the concave portion 8f provided on the surface of the first electrode 2a on the second electrode 3 side.

Reference numerals 5b and 5c are source gas ejection holes, which are the same as those in the above-described embodiment, and are installed on the flat portion 6f of the first electrode 2. As shown in FIG. 18, a plurality of, for example two, source gas ejection holes 5b and 5c are installed in the vicinity of the dilution gas ejection hole 7a of the flat portion 6f. In addition, the installation positions of the plurality of sets of source gas ejection holes 5b and 5c are approximately equal intervals in the range of 5 mm to 20 mm as shown in FIG.
The ejected source gas is discharged from the exhaust pipes 16a and 16b to the outside of the vacuum vessel 1 by a vacuum pump (not shown).
Further, as shown in FIG. 18, the source gas ejection holes 5b and 5c are installed so that the angle between the ejection direction of the source gas ejection holes 5b and the ejection direction of the source gas ejection holes 5c is θ. This angle θ is an angle between the ejection direction of the source gas ejection holes 5b and the ejection direction of the source gas ejection holes 5c.
The specific value of the angle θ depends on the distance between the pair of electrodes 2a and 3, but is set in the range of 1 to 80 degrees.
That is, since the source gas ejection holes 5b and 5c are installed with an angle θ, the source gas ejected from the source gas ejection holes 5b and 5c is the second electrode 3 and the diluted gas ejected from the dilution gas ejection hole 7a It contacts in the form of extruding in the direction parallel to the surface. As a result, mixing of the source gas and the dilution gas is promoted.
In this case, the strength of contact between the source gas and the dilution gas or the strength of mixing depends on the angle θ. Of course, it also depends on the pressure between the first and second electrodes 2a, 3.

Since the source gas ejection holes 5b and 5c have an angle θ, in addition to the action caused by the difference in position between the source gas ejection holes 5b and 5c and the dilution gas ejection hole 7a, the source gas ejection holes 5b and 5c The effect of the angle θ having occurs.
That is, the source gas and the dilution gas are respectively ejected from the source gas ejection holes 5b and 5c and the dilution gas ejection hole 7a that are installed at different positions from the surface of the second electrode 3, and after the ejection, The plasma is generated in a separate space, and the plasma-generated source gas and dilution gas are brought into contact with each other to mix them. As a result, a large amount of radicals that contribute to the formation of high quality films such as H, SiH ₃ radicals, and excited H ₂ are generated.
That is, since the source gas ejected from the source gas ejection holes 5b and 5c is ejected from the dilution gas ejection hole 7a and contacts the plasma-formed dilution gas in a direction parallel to the surface of the second electrode 3. Promote mixing of source gas and dilution gas. This promotion of mixing of the source gas and the dilution gas has the effect of promoting the following reactions (b) to (d).
That is, as a result of promoting the mixing of the raw material gas and the dilution gas, the following reaction becomes remarkable as a reaction that becomes remarkable as compared with the conventional apparatus.
(B) H ₂ → H + H (generates a large amount of atomic H): The condition that the microcrystalline silicon film can be easily formed by increasing the H atom concentration is established.
(C) H + SiH ₄ → H ₂ + SiH ₃ (generates a large amount of H ₂ and a large amount of SiH ₃ ): The condition that a high-quality silicon-based film can be easily formed by increasing the SiH ₃ concentration is established.
(D) SiH ₂ + H ₂ → SiH ₄ (disappears a large amount of SiH ₂ ): Disilane (SiH ₂ + SiH ₄ → Si ₂ H ₆ ) and trisilane (SiH ₂ + Si ₂ H ₆ → Si ₃ ) due to the decrease in SiH ₂ concentration. Conditions for removing dust (powder) formation factors such as H ₈ ) are established.

Since the sixth embodiment is substantially the same as the second to fifth embodiments except for the above-described features of the device configuration and the operation thereof, description of handling of the device will be omitted.
In actual application, since the concave portion 8f has a shape that causes hollow cathode discharge, there is a high possibility of causing hollow cathode discharge in combination with the dilution gas ejection hole 7a. Thereby, generation of a high-density plasma of the dilution gas is expected.

(Example 7)
A plasma CVD apparatus according to the seventh embodiment of the present invention and a silicon-based film manufacturing method using the plasma CVD apparatus will be described with reference to FIG. Reference is also made to FIGS.
FIG. 19 is a schematic cross-sectional view showing the first electrode 2 used in the plasma CVD apparatus according to the seventh embodiment of the present invention.
The characteristics of the plasma CVD apparatus according to the seventh embodiment are characterized in that the structure of the recess 8f installed in the first electrode 2 in the above-described sixth embodiment is cylindrical, whereas the structure of the seventh embodiment is different from that of the seventh embodiment. In this case, the structure of the recess 8g is conical.

Reference numeral 8 g is a conical recess provided in the first electrode 2. The sectional shape of the recess 8g is a conical shape. The diameter of the bottom of the cone is 2-20 mm, for example 5 mm. Its height is 3 to 20 mm, for example 5 mm.
A large number of the recesses 8g are installed. At the time of installation, the adjacent interval is 5 mm to 50 mm, for example, 20 mm.
Since this recess 8g has a shape that causes a generally known hollow cathode discharge, there is a high possibility of causing a hollow cathode discharge by combination with a diluting gas ejection hole 7a described later. Thereby, generation of a high-density plasma of the dilution gas is expected.

Reference numeral 7a denotes a dilution gas ejection hole, which is installed at the apex of all the many recesses 8g.
The dilution gas ejection holes 7a, like the previous embodiments, for ejecting the hydrogen gas H ₂ supplied from the second cave-type gas inlet passage 15b between the first and second electrodes 2 and 3.
The jetted dilution gas is discharged from the exhaust pipes 16a and 16b to the outside of the vacuum vessel 1 by a vacuum pump (not shown).

  Reference numeral 6f is a flat portion of the surface of the first electrode 2 on the second electrode 3 side. The flat portion 6f is a region other than the concave portion 8f provided on the surface of the first electrode 2 on the second electrode 3 side.

  Reference numerals 5b and 5c are source gas ejection holes, which are the same as those in the above-described embodiment, and are installed on the flat portion 6f of the first electrode 2. As shown in FIG. 19, a plurality of, for example two, source gas ejection holes 5b and 5c are installed in the vicinity of the dilution gas ejection hole 7a of the flat portion 6f. The source gas ejection holes 5b and 5c have an angle θ. In addition, the installation positions of the plurality of sets of source gas ejection holes 5b and 5c are approximately equal intervals in the range of 5 mm to 20 mm as shown in FIG.

Since the seventh embodiment is substantially the same as the sixth embodiment except for the above-described features, detailed description thereof is omitted.
In actual application, in the case of Example 7, as in the case of Example 6, the recess 8g has a shape that causes hollow cathode discharge, so that the hollow cathode discharge is combined with the dilution gas injection hole 7a. Is likely to cause. Thereby, generation of a high-density plasma of the dilution gas is expected.

1 ... Vacuum container,
2 ... 1st electrode,
3 ... second electrode,
4 ... means for supporting the first electrode 2;
5a, 5b, 5c ... Raw material gas ejection holes,
6a, 6b, 6c, 6d, 6e ... convex portions provided on the surface of the first electrode 2 on the second electrode 3 side,
6f ... a flat portion provided on the surface of the first electrode 2 on the second electrode 3 side,
7a: dilution gas ejection hole,
8a, 8b, 8c, 8d, 8e, 8f ... a recess provided on the surface of the first electrode 2 on the second electrode 3 side,
9 ... substrate,
10a ... Source gas supply source,
10b ... dilution gas supply source,
11a: first gas supply pipe,
11b ... second gas supply pipe,
12a: first gas introduction pipe,
12b ... second gas introduction pipe,
13a ... first gas header,
13b ... second gas header,
14a ... first insulating vacuum flange,
14b ... second insulating vacuum flange,
15a: first cave-type gas introduction path,
15b ... second cave-type gas introduction path,
17 ... Raw material gas jet,
18 ... jet of dilution gas,
19 ... mixing region,
20 ... Transmitter,
21 ... Power amplifier,
22 ... impedance matching unit,
23a, 23b ... Coaxial cable,
24 ... Current introduction terminal,
25 ... Electric power supply conductor,
26: Feeding point.

Claims (12)

A vacuum vessel with an exhaust system;
A source of a source gas and a source of a dilution gas for diluting the source gas;
A gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel;
A pair of electrodes including a first electrode of an electrically non-grounded parallel plate type having a gas ejection hole for ejecting the source gas and the dilution gas, and a second electrode of a parallel plate type on which a substrate is placed;
A high frequency power supply system for supplying high frequency power to the pair of electrodes,
In a plasma CVD apparatus for forming a thin film on a substrate installed in the vacuum vessel,
The gas ejection holes are composed of a plurality of source gas ejection holes for ejecting only the source gas and a plurality of dilution gas ejection holes for ejecting only the dilution gas, and the source gas ejection holes and the dilution gas ejection holes are A plasma CVD apparatus, which is disposed at spatially different positions.   2. The plasma CVD apparatus according to claim 1, wherein the source gas ejection hole is disposed closer to the second electrode surface than the dilution gas ejection hole. 3.   3. The plasma CVD apparatus according to claim 1, wherein a plurality of concave portions and a plurality of convex portions are formed in the first electrode, a source gas ejection hole is disposed in the convex portion, and the concave portions are formed. A plasma CVD apparatus characterized in that a dilution gas injection hole is disposed in the plasma CVD apparatus.   The plasma CVD apparatus according to any one of claims 1 to 3, wherein when the source gas is ejected between the first and second electrodes, at least a first electrode disposed on a side surface of the first electrode. 1 gas header, a first cave-type gas introduction path disposed inside the first electrode, and a source gas ejection hole disposed on the surface of the first electrode are used, and the dilution gas is When jetting between the first and second electrodes, at least a second gas header arranged on the side surface of the first electrode and a second cave-type gas introduction arranged inside the first electrode A plasma CVD apparatus characterized in that a dilution gas ejection hole disposed on the surface and the surface of the first electrode is used.   5. The plasma CVD apparatus according to claim 1, wherein the source gas ejection hole has a direction in which the source gas is ejected in a direction other than a normal direction of the surface of the second electrode. A plasma CVD apparatus characterized by being arranged in   The plasma CVD apparatus according to any one of claims 1 to 5, wherein the source gas ejection hole has an angle between the ejection directions of two adjacent source gas ejection holes in a range of 1 to 80 degrees. A plasma CVD apparatus characterized by being set.   4. The plasma CVD apparatus according to claim 3, wherein a cross-sectional shape of the concave portion is rectangular, trapezoidal, corrugated, sawtooth, cylindrical or conical.   4. The plasma CVD apparatus according to claim 3, wherein a cross-sectional shape of the convex portion is a rectangle, a trapezoid, a waveform, or a sawtooth shape. A vacuum vessel with an exhaust system;
A source of a source gas and a source of a dilution gas for diluting the source gas;
A gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel;
A pair of electrodes including a first electrode of an electrically non-grounded parallel plate type having a gas ejection hole for ejecting the source gas and the dilution gas, and a second electrode of a parallel plate type on which a substrate is placed;
A high-frequency power supply system that supplies high-frequency power to the pair of electrodes, and a method of manufacturing a silicon-based film using a plasma CVD apparatus that forms a film on a substrate installed in the vacuum vessel. ,
The gas ejection hole is composed of a plurality of source gas ejection holes for ejecting only the source gas and a plurality of dilution gas ejection holes for ejecting only the dilution gas, and the source gas ejection hole is close to the surface of the second electrode The dilution gas injection hole is arranged at a position far from the surface of the second electrode, and the source gas having a short exposure time to the plasma is mixed with the dilution gas having a long exposure time to the plasma. A method for producing a silicon-based film using a plasma CVD apparatus, characterized in that contact is made in a region and mixing thereof is promoted. A vacuum vessel with an exhaust system;
A source of a source gas and a source of a dilution gas for diluting the source gas;
A gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel;
A pair of electrodes including a first electrode of an electrically non-grounded parallel plate type having a gas ejection hole for ejecting the source gas and the dilution gas, and a second electrode of a parallel plate type on which a substrate is placed;
A high frequency power supply system for supplying high frequency power to the pair of electrodes,
A method for producing a silicon-based film using a plasma CVD apparatus for forming a film on a substrate installed in the vacuum vessel,
The gas ejection holes are composed of a plurality of source gas ejection holes for ejecting only the source gas and a plurality of dilution gas ejection holes for ejecting only the dilution gas, and the source gas ejection holes and the dilution gas ejection holes are spatially arranged. And the raw material gas injection holes are arranged such that the direction of the raw material gas injection is directed to a direction other than the normal direction of the surface of the second electrode. A method for producing a silicon-based film using a plasma CVD apparatus, wherein gas contact is promoted and mixing of the source gas and the dilution gas is promoted. A vacuum vessel with an exhaust system;
A source of a source gas and a source of a dilution gas for diluting the source gas;
A gas introduction pipe for introducing the source gas and the dilution gas into the vacuum vessel;
A pair of electrodes including a first electrode of an electrically non-grounded parallel plate type having a gas ejection hole for ejecting the source gas and the dilution gas, and a second electrode of a parallel plate type on which a substrate is placed;
A high-frequency power supply system that supplies high-frequency power to the pair of electrodes, and a method of manufacturing a silicon-based film using a plasma CVD apparatus that forms a film on a substrate installed in the vacuum vessel. ,
The gas ejection holes are composed of a plurality of source gas ejection holes for ejecting only the source gas and a plurality of dilution gas ejection holes for ejecting only the dilution gas, and the source gas ejection holes and the dilution gas ejection holes are spatially arranged. Are arranged at different positions, and the source gas ejection holes have an angle between the ejection directions of two adjacent source gas ejection holes in the range of 1 to 80 degrees, and the source gas and the dilution A method for producing a silicon-based film using a plasma CVD apparatus, wherein gas contact is promoted and mixing of the source gas and the dilution gas is promoted.   A method for producing a silicon-based film using the plasma CVD apparatus according to any one of claims 1 to 8, wherein a source gas containing at least a silane gas and a dilution gas containing at least a hydrogen gas are used. A method for producing a silicon-based film using a plasma CVD apparatus, wherein a microcrystalline silicon film is produced.

Images