DE946378C - Process for the manufacture of selenium rectifiers - Google Patents

Process for the manufacture of selenium rectifiers

Info

Publication number
DE946378C
DE946378C DES12718D DES0012718D DE946378C DE 946378 C DE946378 C DE 946378C DE S12718 D DES12718 D DE S12718D DE S0012718 D DES0012718 D DE S0012718D DE 946378 C DE946378 C DE 946378C
Authority
DE
Germany
Prior art keywords
selenium
thermal conversion
manufacture
selenium layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES12718D
Other languages
German (de)
Inventor
Georg Hoppe
Dipl-Ing Ernst Siebert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DES13921D priority Critical patent/DE908043C/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES12718D priority patent/DE946378C/en
Priority claimed from DES13485D external-priority patent/DE917326C/en
Application granted granted Critical
Publication of DE946378C publication Critical patent/DE946378C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing

Description

Verfahren zur Herstellung von Selengleichrichtern Das Hauptpatent 9o8 o43 betrifft ein Verfahren zur Herstellung von Selengleichrichtern und besteht darin, daß die thermische Umwandlung der Selenschicht nach dem Aufbringen, z. B. Aufspritzen oder Aufdampfen, der Deckelektrode vorgenommen wird.Process for the manufacture of selenium rectifiers The main patent 9o8 o43 relates to a method for manufacturing selenium rectifiers and consists in that the thermal conversion of the selenium layer after application, e.g. B. Spraying or vapor deposition, the cover electrode is made.

Gegenstand der Erfindung ist eine Verbesserung und weitere Ausgestaltung der Erfindung des Hauptpatentes. Gemäß der Erfindung wird die Deckelektrode nach der ersten und vor der zweiten thermischen Umwandlung der Selenschicht aufgebracht. Es ist bekannt, daß sich gute elektrische Eigenschaften von Selengleichrichterscheiben dadurch erzielen lassen, daß die thermische Umwandlung der Selenschicht in zwei Stufen bei verschiedenen Temperaturen vorgenommen wird. Bei der ersten Stufe wird mit Temperaturen von etwa Ioo bis I2o°, in der zweiten Stufe bei Temperaturen nahe dem Schmelzpunkt der Selenschicht, also bei Temperaturen von 2oo bis 2I8°, gearbeitet. Die Erfindung besteht nun darin, daß die Deckelektrode nicht vor, sondern nach der ersten thermischen Umwandlung auf die Selenschicht aufgebracht wird.The invention relates to an improvement and further development the invention of the main patent. According to the invention, the top electrode is after applied to the first and before the second thermal conversion of the selenium layer. It is known that selenium rectifier disks have good electrical properties can thereby be achieved that the thermal conversion of the selenium layer in two Stages is made at different temperatures. At the first stage will with temperatures of about Ioo to I2o °, in the second stage at temperatures close to the melting point of the selenium layer, i.e. at temperatures from 200 to 28 °. The invention consists in that the top electrode not before, but after first thermal conversion is applied to the selenium layer.

Eine Möglichkeit für die Durchführung des Herstellungsverfahrens nach der Erfindung besteht darin, daß das Selen auf die Trägerscheibe aufgedampft wird, und zwar derart, daß die Trägerscheibe dabei auf eine Temperatur von etwa Ioo° gebracht wird. Das Selen wird dann während dieses Vorganges schon so kristallisiert, wie es der ersten thermischen Umwandlung bei der bekannten Stufenumwandlung entspricht. Im Anschluß daran wird auf die Selenschicht in an sich bekannter Weise eine Gegenelektrode der bekannten Zusammensetzung, beispielsweise eine Legierung aus Zinn und Cadmium, aufgespritzt. Nach diesem Aufbringen der Gegenelektrode wird die Scheibe dann der zweiten thermischen Umwandlung bei etwa 2oo bis etwa 2I8° unterzogen.One way to carry out the manufacturing process according to of the invention in that the selenium on the carrier disk is vapor-deposited, in such a way that the carrier disk is at a temperature is brought from about 100 °. The selenium is then already during this process crystallizes as it does the first thermal transformation in the known step transformation is equivalent to. Subsequently, the selenium layer is applied in a manner known per se a counter electrode of the known composition, for example an alloy made of tin and cadmium, sprayed on. After this application of the counter electrode is the disk then subjected to the second thermal transformation at about 200 to about 28 °.

Eine andere Möglichkeit der Durchführung des erfindungsgemäßen Verfahrens besteht darin, daß die Selenschicht in ebenfalls an sich bekannter Weise auf die Trägerelektrode aufgeschmolzen und unter Anwendung eines bestimmten Druckes der ersten thermischen Umwandlung unterworfen wird. Nach diesem Vorgang wird die Deckelektrode aufgebracht, also beispielsweise eine Metallschicht aus Zinn und Cadmium aufgespritzt. Anschließend daran erfolgt die zweite thermische Umwandlung bei Temperaturen von 2oo bis 2I8° C.Another possibility for carrying out the method according to the invention is that the selenium layer is also known per se on the Carrier electrode melted and using a certain pressure of the is subjected to the first thermal conversion. After this process, the top electrode applied, so for example a metal layer of tin and cadmium sprayed on. The second thermal conversion then takes place at temperatures of 2oo to 2I8 ° C.

Claims (3)

PATENTANSPRÜCHE: I. Verfahren zur Herstellung von Selengleichrichtern nach Patent 908 043, dadurch gekennzeichnet, daß die Deckelektrode nach der ersten und vor der zweiten thermischen Umwandlung der Selenschicht aufgebracht wird. PATENT CLAIMS: I. Process for the production of selenium rectifiers according to Patent 908 043, characterized in that the cover electrode is applied after the first and before the second thermal conversion of the selenium layer. 2. Verfahren nach Anspruch I, dadurch gekennzeichnet, daß die erste thermische Umwandlung gleichzeitig mit dem Aufdampfen der Selenschicht vorgenommen wird. 2. The method according to claim I, characterized in that the first thermal conversion is carried out simultaneously with the evaporation of the selenium layer. 3. Verfahren nach Anspruch I, dadurch gekennzeichnet, daß die Deckelektrode auf eine Selenschicht aufgebracht wird, die aufgeschmolzen und in an sich bekannter Weise einer Druckumwandlung unterworfen ist. In Betracht gezogene Druckschriften: USA.-Patentschrift Nr. 2 r24 3o6.3. Procedure according to claim I, characterized in that the cover electrode is on a selenium layer is applied, which is melted and a pressure conversion in a manner known per se is subject. References contemplated: U.S. Patent No. 2r24 3o6.
DES12718D 1943-02-03 1944-09-29 Process for the manufacture of selenium rectifiers Expired DE946378C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DES13921D DE908043C (en) 1943-02-03 1943-02-04 Process for the production of selenium rectifiers, preferably those with light metal carrier electrodes
DES12718D DE946378C (en) 1943-02-03 1944-09-29 Process for the manufacture of selenium rectifiers

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DES0013921 1943-02-03
DES13921D DE908043C (en) 1943-02-03 1943-02-04 Process for the production of selenium rectifiers, preferably those with light metal carrier electrodes
DES0012718 1944-09-28
DES12718D DE946378C (en) 1943-02-03 1944-09-29 Process for the manufacture of selenium rectifiers
DES0013485 1944-12-16
DES13485D DE917326C (en) 1943-02-03 1944-12-17 Process for the manufacture of selenium rectifiers

Publications (1)

Publication Number Publication Date
DE946378C true DE946378C (en) 1956-08-02

Family

ID=34812393

Family Applications (2)

Application Number Title Priority Date Filing Date
DES13921D Expired DE908043C (en) 1943-02-03 1943-02-04 Process for the production of selenium rectifiers, preferably those with light metal carrier electrodes
DES12718D Expired DE946378C (en) 1943-02-03 1944-09-29 Process for the manufacture of selenium rectifiers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DES13921D Expired DE908043C (en) 1943-02-03 1943-02-04 Process for the production of selenium rectifiers, preferably those with light metal carrier electrodes

Country Status (1)

Country Link
DE (2) DE908043C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE971615C (en) * 1948-10-01 1959-02-26 Siemens Ag Process for the manufacture of dry selenium rectifiers
GB830027A (en) * 1958-01-27 1960-03-09 Standard Telephones Cables Ltd Selenium rectifier

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2124306A (en) * 1934-08-08 1938-07-19 Int Standard Electric Corp Electrical device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB472961A (en) * 1936-03-30 1937-09-30 Henriette Rupp Improvements in the manufacture of dry rectifiers, photo-electric cells, elements for thermo-electric couples and the like
AT153134B (en) * 1936-06-13 1938-04-11 Aeg Process for the manufacture of dry plate rectifiers.
AT157337B (en) * 1936-09-05 1939-10-25 Siemens Ag Method of making selenium rectifiers.
BE466860A (en) * 1939-10-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2124306A (en) * 1934-08-08 1938-07-19 Int Standard Electric Corp Electrical device

Also Published As

Publication number Publication date
DE908043C (en) 1954-04-01

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