DE917326C - Process for the manufacture of selenium rectifiers - Google Patents

Process for the manufacture of selenium rectifiers

Info

Publication number
DE917326C
DE917326C DES13485D DES0013485D DE917326C DE 917326 C DE917326 C DE 917326C DE S13485 D DES13485 D DE S13485D DE S0013485 D DES0013485 D DE S0013485D DE 917326 C DE917326 C DE 917326C
Authority
DE
Germany
Prior art keywords
selenium
manufacture
counter electrode
selenium rectifiers
rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES13485D
Other languages
German (de)
Inventor
Georg Hoppe
Erika Hill Geb Lehmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DES13921D priority Critical patent/DE908043C/en
Priority claimed from DES13921D external-priority patent/DE908043C/en
Priority to DES12718D priority patent/DE946378C/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES13485D priority patent/DE917326C/en
Application granted granted Critical
Publication of DE917326C publication Critical patent/DE917326C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing

Description

Verfahren zur Herstellung von Selengleichrichtern Das Patent 9o8 o43 betrifft ein Verfahren zur Herstellung von Selengleichrichtern und besteht darin, daß die Gegenelektrode nicht, wie meist üblich, nach vollendeter thermischer Umwandlung der Selenschicht, sondern vorher aufgebracht wird. Das bedeutet, daß die thermische Umwandlung der Selenschicht als notwendige Voraussetzung für die Erzielung der gleichrichtenden Eigenschaften der Selenschicht ganz oder zumindest zum Teil erst nach dem Aufspritzen oder Aufdampfen oder anderweitigen Aufbringen der Gegenelektrode durchgeführt wird. Gegenstand der Erfindung ist eine Verbesserung und weitere Ausgestaltung der Erfindung des Hauptpatents. Erfindungsgemäß werden die Gleichrichterscheiben nach dem Aufbringen der Gegenelektrode zunächst längere Zeit gelagert und erst dann weiterverarbeitet. Die nach der Erfindung des Hauptpatents sich an das Aufbringen, beispielsweise Aufspritzen, der Gegenelektrode anschließenden Verfahrensschritte der thermischen Umwandlung und elektrischen Formierung der Selengleichrichterscheiben schließen sich somit zeitlich nicht unmittelbar an das Aufbringen der Gegenelektrode an, es wird vielmehr eine Lagerzeit dazwischengeschaltet. Die Erfindung beruht auf der durch Versuche gewonnenen Erkenntnis, daß eine bedeutend leichtere Formierbarkeit der Selengleichrichterscheiben eintritt, wenn die mit der Gegenelektrode versehenen Scheiben längere Zeit, zweckmäßig bei Raumtemperatur, lagern. Die Erfindung hat den Vorteil, daß die Leerlaufströme bzw. Rückströme der Gleichrichterscheiben kleiner, die Vorströme dagegen erhöht werden. Wie Versuche gezeigt haben, darf die Lagerzeit ein bestimmtes Höchstmaß nicht übersteigen, da sonst eine verstärkte Alterung der Gleichrichterscheiben beim Betrieb auftritt. Versuche haben ergeben, daß eine ein- bis fünftägige Lagerzeit besonders gute Ergebnisse bringt. Es wurde festgestellt, daß bei einer Lagerzeit von etwa 5 Tagen eine Alterung von I bis 21/2% Gleichspannungsabfall erreicht wird. Scheiben, bei denen eine Lagerzeit von 2 Monaten angewendet wurde, zeigten schon nach 5oo bzw. I3oo Betriebsstunden die höchstzulässige Alterung von Io% Gleichspannungsabfall.Process for the manufacture of selenium rectifiers The patent 9o8 o43 relates to a process for the production of selenium rectifiers and consists in that the counter electrode does not, as is usually the case, after the thermal conversion has been completed the selenium layer, but is applied beforehand. That means the thermal Conversion of the selenium layer as a necessary condition for achieving the rectifying Properties of the selenium layer entirely or at least partially only after spraying on or vapor deposition or other application of the counter electrode is carried out. The subject of the invention is an improvement and a further embodiment of the invention of the main patent. According to the invention, the rectifier disks are after application the counter electrode is initially stored for a long time and only then processed further. According to the invention of the main patent, the application, for example spraying, the subsequent process steps of thermal conversion of the counter electrode and electrical formation of the selenium rectifier disks thus close not immediately after the application of the counter electrode at, rather, a storage period is interposed. The invention is based on Knowledge gained through experiments that a significantly easier formability the selenium rectifier disks occurs when the counter-electrode Store the panes for a longer period of time, preferably at room temperature. The invention has the advantage that the no-load currents or return currents of the rectifier disks are smaller, the pre-currents, however, are increased. As tests have shown, the storage time is allowed Do not exceed a certain maximum, otherwise the aging of the Rectifier disks occurs during operation. Tests have shown that a Storage time of up to five days brings particularly good results. It was determined, that with a storage time of about 5 days an aging of I to 21/2% DC voltage drop is achieved. Panes that have been stored for 2 months, showed the maximum permissible aging of after 500 or 300 hours of operation Io% DC voltage drop.

Claims (3)

PATENTANSPRÜCHE: I. Verfahren zur Herstellung von Selengleichrichtern, bei denen gemäß Patent 9o8 o43 die thermische Umwandlung der Selenschicht erst nach dem Aufbringen der Gegenelektrode durchgeführt wird, dadurch gekennzeichnet, daß die Selengleichrichterscheiben nach dem Aufbringender Gegenelektrode zunächst längere Zeit gelagert und erst dann weiterverarbeitet werden. PATENT CLAIMS: I. Process for the production of selenium rectifiers, in those according to patent 9o8 043 the thermal conversion of the selenium layer only after the application of the counter electrode is carried out, characterized in that the selenium rectifier disks are initially longer after the counterelectrode has been applied Time stored and only then processed further. 2. Verfahren nach Anspruch i, gekennzeichnet durch eine Lagerzeit von mindestens 24 Stunden bis höchstens etwa 5 Tage. 2. The method according to claim i, characterized by a storage time of at least 24 hours to a maximum of about 5 days. 3. Verfahren nach Anspruch i und 2, dadurch gekennzeichnet, daß die Gleichrichterscheiben bei Raumtemperatur gelagert werden.3. The method according to claim i and 2, characterized in that the rectifier disks be stored at room temperature.
DES13485D 1943-02-03 1944-12-17 Process for the manufacture of selenium rectifiers Expired DE917326C (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DES13921D DE908043C (en) 1943-02-03 1943-02-04 Process for the production of selenium rectifiers, preferably those with light metal carrier electrodes
DES12718D DE946378C (en) 1943-02-03 1944-09-29 Process for the manufacture of selenium rectifiers
DES13485D DE917326C (en) 1943-02-03 1944-12-17 Process for the manufacture of selenium rectifiers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES0013921 1943-02-03
DES13921D DE908043C (en) 1943-02-03 1943-02-04 Process for the production of selenium rectifiers, preferably those with light metal carrier electrodes
DES0013485 1944-12-16
DES13485D DE917326C (en) 1943-02-03 1944-12-17 Process for the manufacture of selenium rectifiers

Publications (1)

Publication Number Publication Date
DE917326C true DE917326C (en) 1954-08-30

Family

ID=34812119

Family Applications (1)

Application Number Title Priority Date Filing Date
DES13485D Expired DE917326C (en) 1943-02-03 1944-12-17 Process for the manufacture of selenium rectifiers

Country Status (1)

Country Link
DE (1) DE917326C (en)

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