DE857527C - Verfahren zur Herstellung von Trockenflaechenberuehrungs-Gleichrichtern - Google Patents

Verfahren zur Herstellung von Trockenflaechenberuehrungs-Gleichrichtern

Info

Publication number
DE857527C
DE857527C DEW3259D DEW0003259D DE857527C DE 857527 C DE857527 C DE 857527C DE W3259 D DEW3259 D DE W3259D DE W0003259 D DEW0003259 D DE W0003259D DE 857527 C DE857527 C DE 857527C
Authority
DE
Germany
Prior art keywords
metal
rectifier
manufacture
surface contact
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEW3259D
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Application granted granted Critical
Publication of DE857527C publication Critical patent/DE857527C/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164Oxidation and subsequent heat treatment of the foundation plate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02614Transformation of metal, e.g. oxidation, nitridation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
DEW3259D 1937-02-08 1937-09-21 Verfahren zur Herstellung von Trockenflaechenberuehrungs-Gleichrichtern Expired DE857527C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3718/37A GB491785A (en) 1937-02-08 1937-02-08 Improvements relating to the manufacture of alternating electric current rectifiers

Publications (1)

Publication Number Publication Date
DE857527C true DE857527C (de) 1952-12-01

Family

ID=9763650

Family Applications (2)

Application Number Title Priority Date Filing Date
DEW3259D Expired DE857527C (de) 1937-02-08 1937-09-21 Verfahren zur Herstellung von Trockenflaechenberuehrungs-Gleichrichtern
DEW104793D Expired DE763878C (de) 1937-02-08 1938-12-25 Verfahren zur Herstellung von Kupferoxydgleichrichterelementen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEW104793D Expired DE763878C (de) 1937-02-08 1938-12-25 Verfahren zur Herstellung von Kupferoxydgleichrichterelementen

Country Status (5)

Country Link
US (1) US2201709A (ko)
DE (2) DE857527C (ko)
FR (2) FR832708A (ko)
GB (1) GB491785A (ko)
NL (1) NL54236C (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2508161A (en) * 1945-11-13 1950-05-16 Westinghouse Electric Corp Rectifier element
US5814164A (en) * 1994-11-09 1998-09-29 American Scientific Materials Technologies L.P. Thin-walled, monolithic iron oxide structures made from steels, and methods for manufacturing such structures
US6045628A (en) * 1996-04-30 2000-04-04 American Scientific Materials Technologies, L.P. Thin-walled monolithic metal oxide structures made from metals, and methods for manufacturing such structures
US6461562B1 (en) 1999-02-17 2002-10-08 American Scientific Materials Technologies, Lp Methods of making sintered metal oxide articles

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT111459B (de) * 1925-03-28 1928-11-26 Westinghouse Brake & Signal Verfahren zur Herstellung eines Gleichrichters.
US1936792A (en) * 1929-02-06 1933-11-28 Westinghouse Electric & Mfg Co Method of making copper oxide rectifiers for high voltage application
US1820166A (en) * 1930-06-18 1931-08-25 Union Switch & Signal Co Copper oxide rectifier

Also Published As

Publication number Publication date
DE763878C (de) 1952-10-06
GB491785A (en) 1938-09-08
FR832708A (fr) 1938-10-03
US2201709A (en) 1940-05-21
FR49946E (fr) 1939-09-22
NL54236C (ko) 1943-04-15

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