DE826324C - Photoelektrische Vorrichtung mit einem Koerper aus Halbleitermaterial - Google Patents
Photoelektrische Vorrichtung mit einem Koerper aus HalbleitermaterialInfo
- Publication number
- DE826324C DE826324C DEP41935D DEP0041935D DE826324C DE 826324 C DE826324 C DE 826324C DE P41935 D DEP41935 D DE P41935D DE P0041935 D DEP0041935 D DE P0041935D DE 826324 C DE826324 C DE 826324C
- Authority
- DE
- Germany
- Prior art keywords
- tip contact
- light
- light beam
- contact
- housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
- H01H47/22—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
- H01H47/24—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil having light-sensitive input
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85788A US2560606A (en) | 1949-04-06 | 1949-04-06 | Photoresistive translating device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE826324C true DE826324C (de) | 1951-12-27 |
Family
ID=22193939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEP41935D Expired DE826324C (de) | 1949-04-06 | 1949-05-07 | Photoelektrische Vorrichtung mit einem Koerper aus Halbleitermaterial |
Country Status (7)
Country | Link |
---|---|
US (1) | US2560606A (en, 2012) |
BE (1) | BE489417A (en, 2012) |
CH (1) | CH274611A (en, 2012) |
DE (1) | DE826324C (en, 2012) |
FR (1) | FR989391A (en, 2012) |
GB (1) | GB670730A (en, 2012) |
IT (1) | IT454648A (en, 2012) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1041181B (de) * | 1954-01-08 | 1958-10-16 | Siemens Ag | Verfahren zur Herstellung einer vakuumdicht verschlossenen Fototransistoranordnung |
DE1058633B (de) * | 1955-06-14 | 1959-06-04 | Ibm Deutschland | Verfahren zur Herstellung sperrfreier Elektroden auf Cadmiumsulfid-Halbleitern |
DE1140654B (de) * | 1959-07-01 | 1962-12-06 | Siemens Ag | Fotoelektrisch wirkendes Bauelement zum Feststellen, Registrieren oder Messen elektromagnetischer Strahlung, insbesondere fotoelektrisch wirkendes Halbleiterbauelement |
DE1144416B (de) * | 1959-09-11 | 1963-02-28 | Philips Nv | Phototransistor |
DE1283331B (de) * | 1963-05-24 | 1968-11-21 | Agfa Gevaert Ag | Fotowiderstand fuer einen Daemmerungsschalter |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2662984A (en) * | 1950-01-27 | 1953-12-15 | Gen Electric Co Ltd | Crystal contact device |
NL167899B (nl) * | 1951-03-10 | Heidelberger Druckmasch Ag | Ombouweenheid voor een offset-rotatiedrukmachine. | |
US2641712A (en) * | 1951-07-13 | 1953-06-09 | Bell Telephone Labor Inc | Photoelectric device |
US2749463A (en) * | 1951-10-24 | 1956-06-05 | Bell Telephone Labor Inc | Solid state television pick-up tube |
US2702838A (en) * | 1951-11-15 | 1955-02-22 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2812445A (en) * | 1951-11-16 | 1957-11-05 | Bell Telephone Labor Inc | Transistor trigger circuit |
US2745021A (en) * | 1951-11-23 | 1956-05-08 | Rca Corp | Photo device amplifier circuit |
US2726312A (en) * | 1952-01-17 | 1955-12-06 | Gen Electric | Thermal control system |
BE520422A (en, 2012) * | 1952-06-06 | |||
US2790952A (en) * | 1953-05-18 | 1957-04-30 | Bell Telephone Labor Inc | Method of optically testing semiconductor junctions |
US2815487A (en) * | 1953-06-11 | 1957-12-03 | Northrop Aircraft Inc | Signal converter |
LU33171A1 (en, 2012) * | 1953-10-28 | |||
US2863056A (en) * | 1954-02-01 | 1958-12-02 | Rca Corp | Semiconductor devices |
US2846346A (en) * | 1954-03-26 | 1958-08-05 | Philco Corp | Semiconductor device |
US2862416A (en) * | 1954-06-09 | 1958-12-02 | Gen Electric | Light intensity measuring device including semiconductor translating circuit |
US2929934A (en) * | 1954-12-30 | 1960-03-22 | Rca Corp | Radiant energy sensitive device |
US2939361A (en) * | 1955-05-20 | 1960-06-07 | Leitz Ernst Gmbh | Photometric apparatus compensated for fluctuations in light source intensity |
US2924754A (en) * | 1956-03-29 | 1960-02-09 | Gen Electric | Radiation responsive system |
US3028500A (en) * | 1956-08-24 | 1962-04-03 | Rca Corp | Photoelectric apparatus |
US2991639A (en) * | 1957-11-15 | 1961-07-11 | Meiners Optical Devices Ltd | Fault finder |
DE1160959B (de) * | 1958-12-31 | 1964-01-09 | Texas Instruments Inc | Lichtelektrische Vorrichtung |
US2993945A (en) * | 1959-02-02 | 1961-07-25 | Rand Corp | Solar cell and method of making |
US3018313A (en) * | 1961-01-04 | 1962-01-23 | Daniel H Gattone | Light gathering power converter |
US3221221A (en) * | 1961-05-31 | 1965-11-30 | Nippon Electric Co | Point contact detector |
US3169191A (en) * | 1962-01-10 | 1965-02-09 | Aircraft Armaments Inc | Method to adjust photoelectric telescope to respond to constant object size |
US3389264A (en) * | 1963-10-07 | 1968-06-18 | Santa Barbara Res Ct | Radiation detection with guard ring detector |
FR2586804B1 (fr) * | 1985-08-30 | 1989-03-31 | Centre Nat Rech Scient | Procede et dispositif de photo-detection rapide a l'aide d'un superreseau |
WO2012006119A2 (en) * | 2010-06-28 | 2012-01-12 | Llc Lawrence Livermore National Security | High voltage photo-switch package module |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1563557A (en) * | 1923-09-18 | 1925-12-01 | William W Coblentz | Optical means for rectifying alternating currents |
US2160383A (en) * | 1936-12-30 | 1939-05-30 | Bell Telephone Labor Inc | Light sensitive electric device and circuit therefor |
US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
-
0
- BE BE489417D patent/BE489417A/xx unknown
- IT IT454648D patent/IT454648A/it unknown
-
1949
- 1949-04-06 US US85788A patent/US2560606A/en not_active Expired - Lifetime
- 1949-05-07 DE DEP41935D patent/DE826324C/de not_active Expired
- 1949-06-10 GB GB15511/49A patent/GB670730A/en not_active Expired
- 1949-06-21 FR FR989391D patent/FR989391A/fr not_active Expired
- 1949-07-19 CH CH274611D patent/CH274611A/de unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1041181B (de) * | 1954-01-08 | 1958-10-16 | Siemens Ag | Verfahren zur Herstellung einer vakuumdicht verschlossenen Fototransistoranordnung |
DE1058633B (de) * | 1955-06-14 | 1959-06-04 | Ibm Deutschland | Verfahren zur Herstellung sperrfreier Elektroden auf Cadmiumsulfid-Halbleitern |
DE1140654B (de) * | 1959-07-01 | 1962-12-06 | Siemens Ag | Fotoelektrisch wirkendes Bauelement zum Feststellen, Registrieren oder Messen elektromagnetischer Strahlung, insbesondere fotoelektrisch wirkendes Halbleiterbauelement |
DE1144416B (de) * | 1959-09-11 | 1963-02-28 | Philips Nv | Phototransistor |
DE1283331B (de) * | 1963-05-24 | 1968-11-21 | Agfa Gevaert Ag | Fotowiderstand fuer einen Daemmerungsschalter |
Also Published As
Publication number | Publication date |
---|---|
GB670730A (en) | 1952-04-23 |
CH274611A (de) | 1951-04-15 |
US2560606A (en) | 1951-07-17 |
BE489417A (en, 2012) | |
IT454648A (en, 2012) | |
FR989391A (fr) | 1951-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE826324C (de) | Photoelektrische Vorrichtung mit einem Koerper aus Halbleitermaterial | |
DE3813079C2 (en, 2012) | ||
DE3025945C2 (de) | Kaltkathodenstruktur mit mindestens einer Kaltkathode zur Erzeugung eines Elektronenstrahls und Verwendung der Kaltkathodenstruktur | |
DE1959889A1 (de) | Mit Ladungsspeicherung arbeitende Einrichtung | |
DE1464315C3 (de) | Schaltungsanordnung mit einem strahlungsempfindhchen Halbleiter Schaltelement | |
DE2025476A1 (de) | Photodiode | |
DE655927C (de) | Anordnung zur Reihenschaltung von lichtelektrischen Zellen | |
DE2930584C2 (de) | Halbleiterbauelement, das den Effekt der gespeicherten Photoleitung ausnutzt | |
DE2916770A1 (de) | Abbildungsvorrichtung und -system | |
DE2330785A1 (de) | Photodetektor-entzerrer | |
DE1144416B (de) | Phototransistor | |
DE69807103T2 (de) | Halbleitende photoelektrische oberfläche | |
DE1537148B2 (en, 2012) | ||
DE1102805B (de) | Fernsehkameraroehre mit Bildwandlerteil und auf Kathodenpotential stabilisierter Bildelektrode | |
DE900876C (de) | Anordnung zur Wiedergabe von Haeufigkeitskurven mittels einer Braunschen Roehre | |
EP0057958A2 (de) | Photoempfindlicher Halbleiterwiderstand | |
DE1183599B (de) | Optischer Sender oder Verstaerker unter unmittelbarer Umwandlung von elektrischer Energie in kohaerente Lichtenergie unter Verwendung eines einkristallinen Halbleiters, der zur selektiven Fluoreszenz angeregt wird | |
DE102021213746B3 (de) | Vorrichtung, Verfahren und System zur Absorption von elektromagnetischer Strahlung, sowie Verfahren zur Herstellung einer Vorrichtung zur Absorption von elektromagnetischer Strahlung | |
DE2255025C3 (de) | Fotoelektrisches Halbleiterbauelement | |
DE1277457B (de) | Strahlungsnachweisgeraet | |
DE2315054C3 (de) | Halbleiter-Photodetektor zur Vielfach-Spektralphotometrie | |
DE811006C (de) | Elektrische Entladungsroehre mit zwei Steuergittern und einem zwischen diesen liegenden Schirmgitter | |
DE3211769C2 (de) | Photoleitender Detektor | |
DE1816128C3 (de) | Mechanisch-elektrischer Wandler mit einem Halbleiterkörper | |
DE1589626B2 (de) | Anordnung zur messung der intensitaet einer infrarotstrahlung |