DE7317242U - Messelement aus einem halbleiter-piezowiderstand - Google Patents

Messelement aus einem halbleiter-piezowiderstand

Info

Publication number
DE7317242U
DE7317242U DE19737317242U DE7317242U DE7317242U DE 7317242 U DE7317242 U DE 7317242U DE 19737317242 U DE19737317242 U DE 19737317242U DE 7317242 U DE7317242 U DE 7317242U DE 7317242 U DE7317242 U DE 7317242U
Authority
DE
Germany
Prior art keywords
semiconductor
voltmeter
monocrystalline
connection areas
measuring element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19737317242U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE7317242U publication Critical patent/DE7317242U/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE19737317242U 1972-05-15 1973-05-08 Messelement aus einem halbleiter-piezowiderstand Expired DE7317242U (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00253081A US3798754A (en) 1972-05-15 1972-05-15 Semiconductor strain gage and method of fabricating same

Publications (1)

Publication Number Publication Date
DE7317242U true DE7317242U (de) 1973-09-13

Family

ID=22958754

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2323102A Pending DE2323102A1 (de) 1972-05-15 1973-05-08 Messelement aus einem halbleiter-piezowiderstand und verfahren zu dessen herstellung
DE19737317242U Expired DE7317242U (de) 1972-05-15 1973-05-08 Messelement aus einem halbleiter-piezowiderstand

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2323102A Pending DE2323102A1 (de) 1972-05-15 1973-05-08 Messelement aus einem halbleiter-piezowiderstand und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (1) US3798754A (enExample)
JP (1) JPS4928282A (enExample)
DE (2) DE2323102A1 (enExample)
FR (1) FR2184878A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849874A (en) * 1972-07-28 1974-11-26 Bell & Howell Co Method for making a semiconductor strain transducer
JPS5242517B2 (enExample) * 1972-10-11 1977-10-25
US3853650A (en) * 1973-02-12 1974-12-10 Honeywell Inc Stress sensor diaphragms over recessed substrates
JPS58152121A (ja) * 1982-03-03 1983-09-09 Mazda Motor Corp エンジンの吸気装置
JPS58155219A (ja) * 1982-03-10 1983-09-14 Mazda Motor Corp エンジンの燃焼促進装置
JPS58155242A (ja) * 1982-03-10 1983-09-14 Mazda Motor Corp エンジンの燃焼促進装置
JPS58160527A (ja) * 1982-03-18 1983-09-24 Mazda Motor Corp エンジンの燃焼促進装置
JPS6361765A (ja) * 1986-09-01 1988-03-17 Mitsubishi Heavy Ind Ltd デイ−ゼル機関の給気装置
JP3007497B2 (ja) 1992-11-11 2000-02-07 三菱電機株式会社 半導体集積回路装置、その製造方法、及びその実装方法
US6444487B1 (en) 1998-07-28 2002-09-03 Rosemount Aerospace Inc. Flexible silicon strain gage
US6635910B1 (en) 1999-07-22 2003-10-21 Measurement Specialties, Inc. Silicon strain gage having a thin layer of highly conductive silicon
US6807875B2 (en) 2000-12-01 2004-10-26 Honeywell International Inc. Self-compensating position sensor
US7412892B1 (en) 2007-06-06 2008-08-19 Measurement Specialties, Inc. Method of making pressure transducer and apparatus
US11906375B1 (en) * 2021-03-23 2024-02-20 Piezo-Metrics Inc Semiconductor strain gage and method of fabrication

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3331124A (en) * 1961-12-26 1967-07-18 Gen Electric Semiconductor strain sensitive devices and method of making the same
US3351880A (en) * 1964-05-04 1967-11-07 Endevco Corp Piezoresistive transducer
US3369290A (en) * 1964-08-07 1968-02-20 Rca Corp Method of making passivated semiconductor devices
US3492513A (en) * 1967-07-27 1970-01-27 Lewis E Hollander Jr Mesa t-bar piezoresistor

Also Published As

Publication number Publication date
US3798754A (en) 1974-03-26
FR2184878A1 (enExample) 1973-12-28
JPS4928282A (enExample) 1974-03-13
DE2323102A1 (de) 1973-12-06

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