DE7312377U - Halbleiter-thyristor - Google Patents
Halbleiter-thyristorInfo
- Publication number
- DE7312377U DE7312377U DE19737312377U DE7312377U DE7312377U DE 7312377 U DE7312377 U DE 7312377U DE 19737312377 U DE19737312377 U DE 19737312377U DE 7312377 U DE7312377 U DE 7312377U DE 7312377 U DE7312377 U DE 7312377U
- Authority
- DE
- Germany
- Prior art keywords
- area
- cathode
- emitter
- shunts
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000002800 charge carrier Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24054972A | 1972-04-03 | 1972-04-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE7312377U true DE7312377U (de) | 1973-08-02 |
Family
ID=22906996
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19737312377U Expired DE7312377U (de) | 1972-04-03 | 1973-04-02 | Halbleiter-thyristor |
DE2316354A Pending DE2316354A1 (de) | 1972-04-03 | 1973-04-02 | Halbleiter-thyristor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2316354A Pending DE2316354A1 (de) | 1972-04-03 | 1973-04-02 | Halbleiter-thyristor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4910682A (OSRAM) |
CH (1) | CH572668A5 (OSRAM) |
DE (2) | DE7312377U (OSRAM) |
FR (1) | FR2178931A1 (OSRAM) |
GB (1) | GB1425651A (OSRAM) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2520134C3 (de) * | 1975-05-06 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor mit einem rechteckigen Halbleiterelement |
ZA775629B (en) * | 1976-10-29 | 1978-08-30 | Westinghouse Electric Corp | An improvement in or relating to thyristor fired by collapsing voltage |
JPS599967B2 (ja) * | 1978-07-14 | 1984-03-06 | ミツミ電機株式会社 | 磁気ヘッド |
US4352118A (en) * | 1979-03-02 | 1982-09-28 | Electric Power Research Institute, Inc. | Thyristor with segmented turn-on line for directing turn-on current |
JP6731401B2 (ja) * | 2014-07-31 | 2020-07-29 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | 位相制御サイリスタ |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE759754A (fr) * | 1969-12-02 | 1971-05-17 | Licentia Gmbh | Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor |
-
1973
- 1973-02-22 GB GB877073A patent/GB1425651A/en not_active Expired
- 1973-03-12 CH CH356973A patent/CH572668A5/xx not_active IP Right Cessation
- 1973-03-29 FR FR7311425A patent/FR2178931A1/fr not_active Withdrawn
- 1973-03-30 JP JP48036565A patent/JPS4910682A/ja active Pending
- 1973-04-02 DE DE19737312377U patent/DE7312377U/de not_active Expired
- 1973-04-02 DE DE2316354A patent/DE2316354A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2316354A1 (de) | 1973-10-18 |
GB1425651A (en) | 1976-02-18 |
FR2178931A1 (OSRAM) | 1973-11-16 |
CH572668A5 (OSRAM) | 1976-02-13 |
JPS4910682A (OSRAM) | 1974-01-30 |
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